1355027 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種半導體晶圓研磨程序用之終㈣測 5 10 2置’尤指-種終點彳 貞測裝置，其在不需個別進行各個旋 ，。之光穿透通孔與研磨墊之密封製程下，藉由將一具有 高彈力之彈性環構件與光纖電纜之前端結合，而可完：密 封光纖電缓且維持密封的狀態，其中，在使用光纖電镜之 放光裝置中’光纖㈣係配置在晶圓之研磨表面旁；藉由 在光纖電㈣端覆蓋-光穿透膜，以防止光纖㈣因漿料 而受到損害；且在不需形成獨立之研磨監測窗即可偵測 終點。 【先前技術】 一般而言，半導體製作方法包括：化學氣相沉積法 15 (CVD) ’以將可做為介電材料或導體之複數個連接層層疊於 晶圓表面上，以使半導體裝置密實化；以及化學機械研磨 ® (CMP)製程，其藉由機械研磨及化學反應以避免在晶圓表面 形成有複數個連接層間之段差（step height^。 CMP製程是一種需要高精準度之平坦化方法，依照半 20 導體裝置之密實化與微型化、及連接結構之層間設計，以 消除晶圓表面之段差。CMP製程是一種近年來發展且普遍 化之精密加工技術，而目前CMP製程技術以廣泛的發展出 來0 6 1355027 CMP技術之原理如圖1所示，當晶圓丨與研磨墊12之表 面接觸時，將一漿料2塗佈在晶圓1表面，以減少表面之化 學反應。一表面裝設有研磨墊12之旋轉台（或研磨台π)及一 固定晶圓1之晶圓載架係相互運動，從而以物理方式將晶圓 5 1表面之凹陷部分平坦化。特別是，當僅有旋轉台11旋轉 時，晶圓載架會同時旋轉且受到一預定壓力之擠壓，造成 晶圓1表面可被研磨墊12及漿料2研磨。研磨速率及平坦化 程度在研磨程序t極為重要，且研磨速率及平坦化程度係 I 由裝備條件、漿料種類、研磨墊形式、及相似條件所決定。 10 在晶圓1表面之研磨程序中，隨機檢驗表面狀態是非常 重要的’且當表面狀態達一合適程度時，則完成研磨程序。 一般而言，表面研磨程序之製程完成點係參考研磨終點或 終點。終點係為最主要的參考點，以將製程誤差及晶圓耗 損降至最低。 15 目前已發展出多種不同的終點偵測裝置結構用以偵測 製程終點。由於光學終點僅測技術可達到高精確度，因而 ，此技術係已廣泛使用。光學終點偵測技術係藉由形成在研 磨墊12上之通孔12a，在晶圓1加工表面上照射雷射光束或 白光以進行光干涉，並追蹤隨時間改變之反射光強度變 20 化。利用隨時間改變之反射光強度變化，可測量晶圓之剩 餘厚度，當厚度達到一特定數值時，則其所偵測之時間點 即所謂之終點。 如上所述，終點偵測裝置是一種在晶圓丨研磨時可偵測 研磨狀態之裝置。此終點偵測裝置亦可稱為初步偵測工 7 1355027 具’其可預測裝設在旋轉台η上之晶圓丨表面研磨程序完成 的時間點。 圖1顯示雷射光束發光型之終點偵測裝置之主要佈 件’其係由Applied Materials Inc所設計，並揭示於美國專 5 利第5,964,643號（申請於1996.02.22)及第6,045,439號（申請 於 1999.02.26)。 在上述專利中’由雷射準直儀LC發出之雷射光束係透 過一透明窗口 160照射在晶圓1表面，其中此透明窗口 16〇具 • 有一裝設在旋轉台11之通孔113及研磨墊12之通孔12a之特 10 殊結構，且一部分之光束係透過晶圓反射。反射光束則透 過分束鏡BS的折射，而照射在偵測器〇上以測量表面之平 整度及偵測其光譜干涉訊號。透明窗口 16〇係裝設在研磨墊 12之通孔12a上’且透明窗口之最低點係放置在旋轉台 通孔11a中。 15 在使用雷射光束照射之終點偵測技術中，若漿料2透過 通孔11a及12a而接觸到研磨墊12與旋轉台11，則光學訊號 > 會因此扭曲而影響到反射光束訊號。如此，應將透明窗口 160通孔11 a及12a間的空隙密封，以防止漿料2滲過研磨墊 12及旋轉台11。 20 由於光源並未直接設置在透明窗口 160上，故應單獨使 用具有南直度之光束’且必須保持光束之連續性，例如， 可使用雷射光束。此外’由於需透過目視檢測始能將具有 透明窗口 160之研磨墊12與旋轉台η準確連接，故不易將透 明窗口 160與通孔11a的位置對準。 8 1355027 此外’圖 2 係為由 International. Business Machines Corporation所設計之終點偵測裝置之主要佈件，其揭示在 美國專利公開第5,433,651號（申請於1993.12.22)。此篇專利 係使用裝置在研磨旋轉台上之研磨監測窗辨別半導體晶圓 5 之研磨程度以偵測終點。由於研磨監測窗係裝設在研磨台 上’且只有一通孔形成在研磨墊上，故研磨台上之監測窗 係與研磨台共平面、或設置在較研磨台低的位置上。因此， 研磨塾通孔之一部分即發生段差，而產生一不規則表面。 • 如此’在研磨過程中，便產生研磨漿料殘留在監測窗 10 上的問題。若殘留的漿料未適當的移除，漿料固化後會造 成漫反射（diffused reflection)。同時，固化的漿料會從監測 窗上分離，而在晶圓表面形成到痕。研磨漿料係滲過研磨 台及研磨墊間，造成研磨墊黏著劑之附著力降低，而導致 監測窗之研磨墊脫離。因此，此裝置在半導體晶圓上的加 15 工不佳。 同時，另有一種終點偵測裝置，其包括由形成在研磨 • 塾上之透明材料所製成之研磨監測窗，其中，研磨塾係裝 設在旋轉台之上方部份以偵測半導體晶圓研磨程序之研磨 程度。由於研磨監測窗邊緣與研磨墊終點共平面，因此， 20在研磨時，透過用以調整研磨墊粗糙度之研磨墊修整器會 刮傷研磨監測窗之表面。被到傷的研磨監測窗表面則會導 致用以偵測晶圓研磨程度之光源呈現不規則的反射，造成 終點無法準確的測量而導致晶圓的耗損。 9 1355027 同時’因研磨監測窗之損壞’造成研磨墊的使用週期 縮短，而使裴置之維護費用增加。由於在研磨過程中會產 生熱能，故在研磨監測窗之較低位置的空間中會產生水 氣，盡而造成光干涉而使穿透度減低或研磨墊與研磨監測 5 窗間之黏著劑之附著力降低。若發生後者的情形，則會導 致研磨監測窗從研磨墊突出之危險。 【發明内容】 > 因此，本發明係用以解決上述等問題。 10 本發明之主要目的係在提供一種半導體晶圓表面研磨 程序用之終點偵測裝置，其藉由一彈性環構件將光纖電纜 固定於研磨墊之通孔中，而不需在旋轉台或研磨墊上裝設 研磨監測窗，即可偵測研磨程序之終點。 本發明之另一目的係在提供一種半導體晶圓表面研磨 15程序用之終點偵測裝置，其不需個別對於研磨墊之通孔進 行密封製程即可將光纖電纜完全密封。此裝置可阻擋研磨 I 用之漿料的滲透，因此可精確偵測終點。 本發明之再-目的係在提供一種半導體晶圓表面研磨 程序用之終點谓測裝置’其可藉由在光纖電缵之前端覆蓋 20 -層光穿透膜，進而防止光纖電镜因聚料而受到損害。 本發明之-實施態樣係提供一種半導體晶圓表°面研磨 程序用之終點偵測裝置’其包括：一旋轉台其具有至少 -形成在軸心方向之通孔；—研磨墊，其係可拆卸的裝設 於旋轉台之上方部分且一裝設有半導體晶圓之晶圓載架係 1355027 . 壓在研磨墊上，且此研磨墊具有一通孔，而此通孔係對應 於旋轉台之通孔且與旋轉台之通孔同軸；一光纖電纜，其 嵌入於旋轉台之通孔中，且具有一裝設在光纖電纜前端之 彈性環構件，此光纖電纜對應於彈性環構件之一部分係密 5封地容置在研磨墊之通孔中，且光纖電纜係由一發送光纖 及一接收光纖所組成；以及一控制元件，係各自與光纖電 纜之發送光纖及接收光纖連接，以偵測半導體晶圓之終點。 在本發明之一較佳實施例中，旋轉台係對應晶圓載架 • 進行旋轉運動、直線運動、及平移運動之任一運動，且晶 ίο圓載架係對應於平移運動之旋轉台進行軌道運動，或晶圓 - 載架係對應於直線運動之旋轉台進行旋轉運動。 在本發明之一較佳實施例中，固定在研磨墊之通孔中 之光纖電纜前端之上表面，係與研磨墊之上表面共平面， 或不高於研磨墊之上表面。 15 在本發明之一較佳實施例中，一參考點係設置在晶圓 載架之一部位，且一感測器係裝設於可旋轉之旋轉台之一 φ 預定部位，而可旋轉之旋轉台裝備有光纖電纜，其中當旋 轉口之感測器通過晶圓載架之參考點，則光纖電纜至少發 光一次。 20 在本發明之一較佳實施例中，光纖電纜其中之—係測 量晶圓之研磨度，且其餘之光纖電纜係測量晶圓之均勻度。 在本發明之一較佳實施例中，晶圓載架係分為複數個 區域，以校準待研磨之半導體晶圓之均勻度，其中各個區 域係任意的被調整及/或按壓。 1355027 •在本發明之一較佳實施例中，彈性環構件係由選自由 天然橡膠·、合成橡膠、及合成樹脂所組成之群組之其中一 者所製成。 在本發明之一較佳實施例中，研磨墊之通孔之尺寸， 5 係大於光纖電纜之外徑，且小於彈性環構件之外徑。 在本發明之一較佳實施例中，光纖之前端係可分離的 覆蓋有一光穿透膜。 在本發明之一較佳實施例中，光穿透膜之厚度係為 • 0.01 mm至 2 mm。 10 同時，在本發明之一較佳實施例中，光穿透膜之光透 率係為0.1%至100%，且光穿透膜具有耐化學腐蝕性及疏水 性。 【實施方式】 15 請參考本發明之較佳實施例。應了解的是，下列實施 例僅用以說明用，而本發明並不限於此。 圖3係使用本發明之終點偵測裝置之CMp裝置之示意 圖。 〜 如圖3所示，CMP裝置10包含：一旋轉台丨丨，其上方裝 20設有-研磨墊12;-光纖電規3〇, #透過偵測晶圓丄表面研 磨狀態之旋轉台裝設在研磨墊12之一部分上；一晶圓載架 13 ’其支樓晶圓i並往下壓以使研磨塾12與晶圓i表面接 觸；-毁料供應噴嘴（圖中未示），其用以提供聚料於研磨塾 12上；以及-修整器載架16’其用以支撑並旋轉修整号 12 1355027 16a以防止研磨塾12之變形或污染因而持續的維持研磨 墊=之研磨能力。在圖3令，參考數值13咖知_ 係提供帛以真空吸引容納晶圓i之研磨端，而參考數值 13b則提供-晶圓！定位用之定位環，其中晶圓工利用表面張 5力或真空吸引固定在研磨端13a之下表面上，而參考數值15 則提供一用以旋轉晶圓載架13及修整器載架16之旋轉軸 (圖中未示）。 本發明實施例之終點偵測裝置可參考下列圖示加以說 | 明。 10 圖4及5係顯示本發明較佳實施例之光纖電纜結構。圖4 係本發明之終點偵測裝置裝設狀態之剖面圖，而圖5係為具 有彈性環構件之光纖電纜前端之示意圖。 如圖4及5所示，本發明之終點偵測裝置包括；一旋轉 台11’其具有至少一形成在軸心方向之通孔11&; 一研磨墊 15 〗2,其係可拆卸的裝設於旋轉台之上方部分且一裝設有半 導體晶圓之晶圓載架13係壓在研磨塾上，此研磨塾12具有 _ 一通孔12a’通孔12a係對應於旋轉台11之通孔1 ia且與旋轉 台11之通孔11a同軸；一光纖電纜30,其嵌入於旋轉台1!之 通孔11a中，且具有一裝設在光纖電纜前端之彈性環構件 20 31 ’其中光纖電纜對應於彈性環構件之一部分係密封地容 置在研磨墊12之通孔12a中，且光纖電纜係由一發送光纖及 一接收光纖所組成；以及一控制元件40，係各自與光纖電 纜之發送光纖及接收光纖連接，以偵測半導體晶圓之終點。 13 1355027 . 在上述的結構組成中，藉由裝設晶圓載架13本身與晶 圓載架之下壓力’可將晶gji表面與研磨墊^ 2相接觸。漿料 係從接觸表面間的精細間隙中流入，故藉由聚料中所含之 研磨顆粒及研磨塾12之表面凸出物可進行機械研磨，且同 5時藉由聚料中所含之化學組成物可進行化學抛光，進而研 磨晶圓1表面。 旋轉台11係對應晶圓載架13進行旋轉運動、直線運 動及平移運動之任一運動，且晶圓載架13係對應於平移 • 運動之旋轉台11進行軌道運動，或晶圓載架13係對應於直 10 線運動之旋轉台11進行旋轉運動。 光纖電纜30係裝設在旋轉台11之通孔11a中。在此例子 中，旋轉台11或研磨墊12可裝備有至少一通孔11&及12&。 光纖電纜30之一端係分別與控制元件4〇連接，並透過發送 光纖及接收光纖以偵測晶圓研磨程序之終點，且另一端係 15從旋轉台11表面凸出以裝設在研磨墊12之通孔12a。若具有 固定在末端之彈性環構件31之光纖電纜3〇是固定於旋轉台 I 11之研磨墊12時’則光纖電纜30並不會隨著研磨墊12運 動。藉由操作裝置施加一穩定外力，可將研磨塾12裝設於 光纖電纜30之彈性環構件31上或從光纖電纜30之彈性環構 20 件31拆卸研磨墊12(如圖4及6所示）。 較佳為，裝設在旋轉台11通孔Ua中之光纖電纜3〇前端 之上表面係與研磨墊12之上表面共平面，或低於研磨墊12 之上表面。若末端之上表面之位置低於研磨墊12之上表 面’則在研磨半導體晶圓表面的製程中，光纖電纜3〇之前 1355027 端不會與維持研磨墊12表面粗糙度之研磨墊修整器接觸， 因此可避免光纖電纜30之前端表面受損。 如上所述，彈性環構件31係與光纖電纜30之前端外周 圍緊密接觸，故可透過旋轉台11通孔11a保護裝設在研磨墊 5 12通孔12a中之光纖電纜30前端，並防止研磨用之漿料滲 過。在此情形下’研磨墊12之通孔12a尺寸較佳係大於光纖 電纜30之外徑’且小於彈性環構件31之外徑》較佳地，橡 膠環構件31係由具有彈性之材料所製成，如天然橡膠、合 > 成橡膠、或合成樹脂。由於與光纖電纜30外周圍結合成一 10 體之彈性環構件3 1具有彈性，故即使末端之外徑大於通孔 11 a之尺寸’彈性環構件3 1仍可輕易的裝設在通孔11 a中。 在此情形下’裝没之末端係與通孔12a緊密接觸，以阻擔紫 料之滲過。 與彈性環構件31連接之光纖電纜30前端，係覆蓋有一 15 光穿透膜35以密封並保護前端。可將一黏著劑塗覆在光穿 透膜35之一端，以使光穿透膜可輕易的裝設或拆解。較佳 地，光穿透膜35之厚度為0.01 mm至2 mm，光透率係為〇1% 至100%，且具有对化學腐姓性及疏水性。在研磨晶圓時， 可保護光纖電缓3 0前端之上表面不被漿料損害，或在清洗 20 晶圓時’可保護光纖電纜30前端之上表面不與去離子水接 觸（如圖5所示）。 控制元件4 0係分別與光纖電纜3 〇之發送光纖及接收光 纖連接’以偵測半導體晶圓研磨程序之終點。光纖電镜3〇 一般是由一發光光纖及至少二接收光纖所組成。發光光纖 15 1355027 . 的位置係位於光纖電纜30之中央部份，而接收光纖則是設 置在發光光纖周圍。較佳地，光纖電纜3〇在晶圓載架丨3之 一部位上設置一參考點，而一感測器（圖中未示）係裝設於可 紅轉之灰轉台11之一預定部位上，而此可旋轉之旋轉台Η 5係裝備有光纖電纜。當旋轉台之感測器通過晶圓載架13之 參考點，光纖電纜至少會發光一次。光纖電纜如上述進行 週期性的發光，故從待研磨之晶圓表面反射的光可聚集並 傳送至控制元件40，以測量待研磨之晶圓狀態改變，因而 • 偵測終點。在此情形下，晶圓載架13較佳係分為複數個區 10域，以校準待研磨之半導體晶圓之均勻度。且各個區域係 任意的被調整及/或按壓。同時，偵測器可包含光學偵測器 及面頻债測器。 雖然本發明已提出現階段最能實施且較佳之實施例， 應了解的是，本發明並不限於所揭露之實施例及圖式。相 15 反的，在本發明所主張之申請專利範圍的精神與範圍中， 可作各式各樣之修飾及改變。 • I業利用性 如上所述’本發明並不需要一分離的研磨監測窗，並 20利用彈性環構件固定光纖電纜之一端，因此可有效的阻檔 研磨用漿料的滲過《同時光纖電纜之末端覆蓋有一光穿透 膜’以防止光纖電纜因漿料而損壞。 此外’不論漿料的滲過或光源之漫反射，本發明仍可 精確的測量研磨程序中之終點。 1355027 而舉例而已，本發明所 圍所述為準’而非僅限 上述實施例僅係為了方便說明 主張之權利範圍自應以申請專利範 於上述實施例。 5 【圖式簡單說明】 本發明之前述或其他目的、特徵及優點，均可從本發 明之詳細說明並同時參酌圖式，而更佳了解。 圖1係習知一實施例之雷射光束發光型之終點偵測裝置之 私剖面示意圖。 10圖2係習知另-實施例之旋轉台上具有研磨監測窗之終點 偵測裝置之剖面示意圖。 圖3係使用本發明之終點偵測裝置之(：1^1>裝置之示意囷。 圖4係本發明之終點偵測裝置裝設狀態之剖面圖。 圖5係本發明之終點偵測裝置用之具有彈性環構件之光纖 15 電纜前端之示意圖。 圖6係本發明之終點偵測裝置用之具有光纖電纜之研磨旋 k 轉台之不意圖。 【主要元件符號說明】 11旋轉台 13晶圓載架 15參考數值 16a修整器 31彈性環構件 1晶圓 10 CMP裝置 1 la、12a通孔 12研磨墊 13a、13b參考數值13a研磨端 16修整器載架 160透明窗口 2漿料 30光纖電、纜 17 1355027 35光穿透膜 40控制元件 BS分束鏡 D偵測器 LC雷射準直儀1355027 IX. Description of the invention: [Technical field of the invention] The present invention relates to a semiconductor wafer polishing program for use in the end (four) measurement 5 10 2 setting, especially the end point detection device, which does not need to be individually Spin,. The light is penetrated through the sealing process of the through hole and the polishing pad, and the elastic ring member with high elasticity is combined with the front end of the optical fiber cable, and the sealed fiber can be electrically cooled and maintained in a sealed state, wherein, in use, In the fiber-optic electron beam illuminating device, the 'optical fiber (four) is disposed beside the polishing surface of the wafer; by covering the light-transmitting film at the electric (four) end of the optical fiber to prevent the optical fiber (4) from being damaged by the slurry; An independent grinding monitor window is formed to detect the end point. [Prior Art] In general, a semiconductor fabrication method includes: chemical vapor deposition (CVD) 15 (CVD) to laminate a plurality of connection layers that can be used as dielectric materials or conductors on a wafer surface to densely package a semiconductor device. And the Chemical Mechanical Abrasive® (CMP) process, which uses mechanical polishing and chemical reactions to avoid the formation of a plurality of interconnecting layers on the surface of the wafer (step height^. The CMP process is a flattening that requires high precision. The method is based on the densification and miniaturization of the semi-conductor device and the interlayer design of the connection structure to eliminate the difference in the surface of the wafer. The CMP process is a precision processing technology developed and generalized in recent years, and the current CMP process technology Widely developed 0 6 1355027 The principle of CMP technology is shown in Figure 1. When the wafer crucible is in contact with the surface of the polishing pad 12, a slurry 2 is coated on the surface of the wafer 1 to reduce the chemical reaction of the surface. A rotating table (or polishing table π) on which a polishing pad 12 is mounted and a wafer carrier of a fixed wafer 1 are moved to each other to physically recess the surface of the wafer 51 In particular, when only the rotary table 11 rotates, the wafer carrier rotates at the same time and is pressed by a predetermined pressure, so that the surface of the wafer 1 can be ground by the polishing pad 12 and the slurry 2. The polishing rate and The degree of planarization is extremely important in the polishing process t, and the polishing rate and degree of flattening are determined by the equipment conditions, the type of the slurry, the form of the polishing pad, and the like. 10 In the grinding procedure of the surface of the wafer 1, random inspection The surface state is very important' and when the surface state reaches a suitable level, the grinding process is completed. In general, the process completion point of the surface grinding program refers to the grinding end point or the end point. The end point is the most important reference point to Process error and wafer loss are minimized. 15 A variety of endpoint detection device structures have been developed to detect process endpoints. This technology is widely used due to the high accuracy of optical endpoint measurement technology. The optical end point detection technology irradiates the laser beam or white light on the processing surface of the wafer 1 by the through hole 12a formed on the polishing pad 12. The light interferes with and tracks the intensity of the reflected light that changes with time. The remaining thickness of the wafer can be measured by the change in the intensity of the reflected light that changes with time. When the thickness reaches a certain value, the detected time point The so-called end point. As mentioned above, the end point detecting device is a device that can detect the grinding state during the polishing of the wafer. The end detecting device can also be called the preliminary detecting device 7 1355027 with its predictable loading. The point at which the wafer surface grinding process is set on the rotating table η. Figure 1 shows the main fabric of the laser beam type end point detecting device, which was designed by Applied Materials Inc and disclosed in the United States. 5 No. 5,964,643 (filed on 1996.02.22) and No. 6,045,439 (filed on 1999.02.26). In the above patent, the laser beam emitted by the laser collimator LC is irradiated onto the surface of the wafer 1 through a transparent window 160, wherein the transparent window 16 has a through hole 113 mounted in the rotary table 11 and The through hole 12a of the polishing pad 12 has a special structure, and a part of the beam is reflected by the wafer. The reflected beam is refracted by the beam splitter BS and is incident on the detector 以 to measure the flatness of the surface and detect its spectral interference signal. The transparent window 16 is attached to the through hole 12a of the polishing pad 12' and the lowest point of the transparent window is placed in the rotary table through hole 11a. In the end point detection technique using laser beam irradiation, if the slurry 2 is in contact with the polishing pad 12 and the rotary table 11 through the through holes 11a and 12a, the optical signal > is thus distorted to affect the reflected beam signal. Thus, the gap between the through holes 11a and 12a of the transparent window 160 should be sealed to prevent the slurry 2 from seeping through the polishing pad 12 and the rotary table 11. 20 Since the light source is not directly disposed on the transparent window 160, the beam having a south straightness should be used alone and the continuity of the beam must be maintained, for example, a laser beam can be used. Further, since the polishing pad 12 having the transparent window 160 can be accurately connected to the turntable n by visual inspection, it is difficult to align the position of the transparent window 160 with the through hole 11a. 8 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。. This patent uses the grinding monitoring window on the grinding rotary table to discriminate the degree of grinding of the semiconductor wafer 5 to detect the end point. Since the polishing monitoring window is mounted on the polishing table and only one through hole is formed on the polishing pad, the monitoring window on the polishing table is coplanar with the polishing table or at a position lower than the polishing table. Therefore, a portion of the through-hole is ground to cause a step difference, resulting in an irregular surface. • In this case, the problem of the polishing slurry remaining on the monitoring window 10 is generated during the grinding process. If the residual slurry is not properly removed, the slurry will form a diffused reflection after curing. At the same time, the solidified slurry separates from the monitoring window and forms a mark on the surface of the wafer. The abrasive slurry penetrates between the polishing table and the polishing pad, causing the adhesion of the polishing pad adhesive to decrease, and the polishing pad of the monitoring window is detached. Therefore, this device does not work well on semiconductor wafers. At the same time, there is another end point detecting device comprising a grinding monitoring window made of a transparent material formed on the grinding and boring, wherein the grinding raft is installed above the rotating table to detect the semiconductor wafer The degree of grinding of the grinding program. Since the edge of the polishing monitoring window is coplanar with the end of the polishing pad, the polishing pad dresser, which is used to adjust the roughness of the polishing pad, scratches the surface of the polishing monitoring window during polishing. The surface of the polished monitoring window that is damaged will cause the light source to detect the degree of wafer grinding to exhibit irregular reflection, resulting in an inaccurate measurement of the end point and loss of the wafer. 9 1355027 At the same time, the damage of the polishing pad is shortened due to the damage of the grinding monitoring window, and the maintenance cost of the device is increased. Since heat is generated during the grinding process, moisture is generated in the space at the lower position of the grinding monitoring window, thereby causing light interference to reduce the penetration or the adhesion between the polishing pad and the polishing monitoring window. The adhesion is reduced. In the event of the latter, the risk of the abrasive monitoring window protruding from the polishing pad is caused. SUMMARY OF THE INVENTION Accordingly, the present invention is to solve the above problems. The main object of the present invention is to provide an end point detecting device for a semiconductor wafer surface polishing process, which fixes a fiber optic cable to a through hole of a polishing pad by an elastic ring member without rotating or grinding A polishing monitoring window is installed on the mat to detect the end of the grinding process. Another object of the present invention is to provide an end point detecting device for a semiconductor wafer surface polishing process which can completely seal a fiber optic cable without separately sealing the through holes of the polishing pad. This device blocks the penetration of the slurry used for grinding, so the endpoint can be accurately detected. A further object of the present invention is to provide an end point predicate device for semiconductor wafer surface grinding process which can cover a 20-layer light penetrating film at the front end of the fiber optic cable to prevent the fiber optic electron microscope from being aggregated. And suffered damage. An embodiment of the present invention provides an end point detecting device for a semiconductor wafer surface grinding process, which includes: a rotating table having at least a through hole formed in an axial direction; - a polishing pad Removably mounted on the upper portion of the rotary table and mounted on a semiconductor wafer wafer carrier 1355027. Pressed on the polishing pad, and the polishing pad has a through hole corresponding to the turntable The hole is coaxial with the through hole of the rotary table; a fiber optic cable embedded in the through hole of the rotary table and having an elastic ring member mounted at the front end of the optical fiber cable, the optical fiber cable corresponding to one of the elastic ring members The cover is placed in the through hole of the polishing pad, and the optical fiber cable is composed of a transmitting fiber and a receiving fiber; and a control component is respectively connected to the transmitting fiber and the receiving fiber of the fiber cable to detect the semiconductor crystal. The end of the circle. In a preferred embodiment of the present invention, the rotary table corresponds to the wafer carrier. • any movement of the rotary motion, the linear motion, and the translational motion, and the crystal frame is rotated corresponding to the rotary motion of the translational motion. , or the wafer-carrier system rotates in response to a rotary table that moves linearly. In a preferred embodiment of the invention, the upper surface of the front end of the fiber optic cable secured in the through hole of the polishing pad is coplanar with the upper surface of the polishing pad or no higher than the upper surface of the polishing pad. In a preferred embodiment of the present invention, a reference point is disposed at a portion of the wafer carrier, and a sensor is mounted on a predetermined portion of the rotatable rotary table, and the rotation is rotatable. The stage is equipped with a fiber optic cable, wherein the fiber optic cable emits at least once when the sensor of the rotary port passes the reference point of the wafer carrier. In a preferred embodiment of the invention, the fiber optic cable measures the degree of polishing of the wafer and the remaining fiber optic cables measure the uniformity of the wafer. In a preferred embodiment of the invention, the wafer carrier is divided into a plurality of regions to calibrate the uniformity of the semiconductor wafer to be polished, wherein each region is arbitrarily adjusted and/or pressed. 1355027 • In a preferred embodiment of the invention, the elastic ring member is made of one selected from the group consisting of natural rubber, synthetic rubber, and synthetic resin. In a preferred embodiment of the invention, the size of the through hole of the polishing pad, 5 is greater than the outer diameter of the fiber optic cable and less than the outer diameter of the elastic ring member. In a preferred embodiment of the invention, the front end of the optical fiber is detachably covered with a light transmissive film. In a preferred embodiment of the invention, the thickness of the light transmissive film is from 0.01 mm to 2 mm. Further, in a preferred embodiment of the present invention, the light transmission film has a light transmittance of 0.1% to 100%, and the light transmissive film has chemical resistance and hydrophobicity. [Embodiment] 15 Please refer to the preferred embodiment of the present invention. It should be understood that the following examples are for illustrative purposes only and the invention is not limited thereto. Figure 3 is a schematic illustration of a CMp device using the endpoint detection device of the present invention. ~ As shown in FIG. 3, the CMP apparatus 10 includes: a rotating table, the upper surface of which is provided with a polishing pad 12; and the optical fiber electrical device 3〇, # transmits a rotating table mounted to detect the surface of the wafer Provided on a portion of the polishing pad 12; a wafer carrier 13' with its support wafer i pressed downward to bring the polishing crucible 12 into contact with the surface of the wafer i; - a reject supply nozzle (not shown), It is used to provide the aggregate on the grinding crucible 12; and - the dresser carrier 16' is used to support and rotate the trim number 12 1355027 16a to prevent deformation or contamination of the grinding crucible 12 and thus maintain the grinding ability of the polishing pad. In Fig. 3, the reference value 13 is known to provide a vacuum to attract the grinding end of the wafer i, and the reference value 13b provides a wafer! A positioning ring for positioning, wherein the inlay is fixed on the lower surface of the grinding end 13a by surface force 5 or vacuum suction, and the reference value 15 provides a rotation for rotating the wafer carrier 13 and the dresser carrier 16. Axis (not shown). The end point detecting device of the embodiment of the present invention can be referred to by the following figures. 10 Figures 4 and 5 show the structure of a fiber optic cable in accordance with a preferred embodiment of the present invention. Fig. 4 is a cross-sectional view showing the state in which the end point detecting device of the present invention is installed, and Fig. 5 is a view showing the front end of the optical fiber cable having the elastic ring member. As shown in FIGS. 4 and 5, the end point detecting device of the present invention comprises: a rotary table 11' having at least one through hole 11' formed in the axial direction; a polishing pad 15 〗 2, which is detachable A wafer carrier 13 provided on the upper portion of the rotating table and mounted with a semiconductor wafer is pressed against the polishing pad, and the polishing pad 12 has a through hole 12a'. The through hole 12a corresponds to the through hole 1 of the rotary table 11. Ia and coaxial with the through hole 11a of the rotary table 11; a fiber optic cable 30 embedded in the through hole 11a of the rotary table 1! and having an elastic ring member 20 31 ' installed at the front end of the optical fiber cable, wherein the optical fiber cable corresponds One portion of the elastic ring member is sealingly received in the through hole 12a of the polishing pad 12, and the optical fiber cable is composed of a transmitting fiber and a receiving fiber; and a control element 40 is a transmitting fiber of the optical fiber cable. And receiving fiber optic connections to detect the end of the semiconductor wafer. 13 1355027. In the above structural composition, the surface of the crystal gji can be brought into contact with the polishing pad 2 by mounting the wafer carrier 13 itself and the pressure under the wafer carrier. The slurry flows from the fine gap between the contact surfaces, so that the abrasive particles contained in the polymer and the surface protrusions of the polishing crucible 12 can be mechanically ground, and the same is included in the aggregate at the same time. The chemical composition can be chemically polished to polish the surface of the wafer 1. The rotary table 11 corresponds to any movement of the wafer carrier 13 for rotational motion, linear motion, and translational motion, and the wafer carrier 13 is orbitally moved corresponding to the translation/movement rotary table 11, or the wafer carrier 13 corresponds to The rotary table 11 of the straight 10-line motion performs a rotational motion. The optical fiber cable 30 is mounted in the through hole 11a of the rotary table 11. In this example, the rotary table 11 or the polishing pad 12 may be equipped with at least one through hole 11 & and 12 & One end of the optical fiber cable 30 is respectively connected to the control element 4, and passes through the transmitting fiber and the receiving fiber to detect the end of the wafer grinding process, and the other end 15 protrudes from the surface of the rotating table 11 to be mounted on the polishing pad 12. Through hole 12a. If the optical fiber cable 3A having the elastic ring member 31 fixed at the end is fixed to the polishing pad 12 of the rotary table I11, the optical fiber cable 30 does not move with the polishing pad 12. The polishing pad 12 can be mounted on the elastic ring member 31 of the fiber optic cable 30 or the polishing pad 12 can be removed from the elastic ring member 20 of the fiber optic cable 30 by applying a stable external force to the operating device (as shown in FIGS. 4 and 6). ). Preferably, the surface of the front end of the optical fiber cable 3 which is disposed in the through hole Ua of the rotary table 11 is coplanar with the upper surface of the polishing pad 12 or lower than the upper surface of the polishing pad 12. If the position of the upper surface of the end is lower than the upper surface of the polishing pad 12, in the process of grinding the surface of the semiconductor wafer, the 1355027 end of the optical fiber cable 3 is not in contact with the polishing pad dresser for maintaining the surface roughness of the polishing pad 12 Therefore, damage to the front end surface of the optical fiber cable 30 can be avoided. As described above, the elastic ring member 31 is in close contact with the outer periphery of the front end of the optical fiber cable 30, so that the front end of the optical fiber cable 30 installed in the through hole 12a of the polishing pad 5 12 can be protected through the through hole 11a of the rotary table 11 and prevented from being ground. The slurry is used to permeate. In this case, the size of the through hole 12a of the polishing pad 12 is preferably larger than the outer diameter of the optical fiber cable 30 and smaller than the outer diameter of the elastic ring member 31. Preferably, the rubber ring member 31 is made of a material having elasticity. Into, such as natural rubber, combined with rubber, or synthetic resin. Since the elastic ring member 31 which is combined with the outer periphery of the optical fiber cable 30 has elasticity, even if the outer diameter of the end is larger than the size of the through hole 11a, the elastic ring member 31 can be easily installed in the through hole 11a. in. In this case, the end of the mounting is in close contact with the through hole 12a to block the permeation of the purple material. The front end of the optical fiber cable 30 connected to the elastic ring member 31 is covered with a 15 light penetrating film 35 to seal and protect the front end. An adhesive may be applied to one end of the light transmissive film 35 so that the light transmissive film can be easily attached or disassembled. Preferably, the light transmissive film 35 has a thickness of 0.01 mm to 2 mm, a light transmittance of 〇1% to 100%, and has chemical resistance and hydrophobicity. When the wafer is polished, the surface of the front end of the optical fiber can be protected from the slurry damage, or the surface of the front end of the optical fiber cable 30 can be protected from contact with deionized water when cleaning the 20 wafers (Fig. 5). Shown). Control element 40 is coupled to the fiber optic cable and the receiving fiber of the fiber optic cable 3' to detect the end of the semiconductor wafer grinding process. The fiber-optic electron microscope 3 is generally composed of an illuminating fiber and at least two receiving fibers. The position of the illuminating fiber 15 1355027 . is located in the central portion of the fiber optic cable 30, and the receiving fiber is disposed around the illuminating fiber. Preferably, the fiber optic cable 3 is provided with a reference point on a portion of the wafer carrier 3, and a sensor (not shown) is mounted on a predetermined portion of the red-turnable gray turntable 11. The rotatable rotary table 5 is equipped with a fiber optic cable. When the sensor of the rotary stage passes the reference point of the wafer carrier 13, the fiber optic cable will emit at least once. The fiber optic cable is periodically illuminated as described above, so that light reflected from the surface of the wafer to be polished can be collected and transmitted to the control element 40 to measure changes in the state of the wafer to be polished, thereby detecting the end point. In this case, the wafer carrier 13 is preferably divided into a plurality of zones 10 to calibrate the uniformity of the semiconductor wafer to be ground. And each area is arbitrarily adjusted and/or pressed. At the same time, the detector can include an optical detector and an area frequency debt detector. Although the present invention has been described in its preferred embodiments, it is understood that the invention is not limited to the disclosed embodiments and drawings. The various modifications and changes can be made in the spirit and scope of the invention as claimed. • Industry utilization As described above, the present invention does not require a separate grinding monitoring window, and 20 uses an elastic ring member to fix one end of the optical fiber cable, thereby effectively blocking the penetration of the polishing slurry. The end is covered with a light transmissive film' to prevent damage to the fiber optic cable due to the slurry. Furthermore, the present invention can accurately measure the end point in the grinding process regardless of the penetration of the slurry or the diffuse reflection of the light source. The present invention is intended to be illustrative, and not limited to the foregoing embodiments. BRIEF DESCRIPTION OF THE DRAWINGS The foregoing and other objects, features and advantages of the present invention will become more apparent from the Detailed Description BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a private cross-sectional view showing a laser beam type end point detecting device of a conventional embodiment. Figure 2 is a schematic cross-sectional view of the detection device with the end of the polishing monitoring window on the rotary table of the prior art. 3 is a schematic view of the apparatus for using the end point detecting device of the present invention. FIG. 4 is a cross-sectional view showing the state in which the end point detecting device of the present invention is installed. FIG. 5 is an end point detecting device of the present invention. Figure 6 is a schematic view of the cable front end of the optical fiber 15 having the elastic ring member. Fig. 6 is a schematic view of the grinding rotary k-turn table with the optical fiber cable used in the end point detecting device of the present invention. [Main component symbol description] 11 rotary table 13 wafer loading Rack 15 reference value 16a trimmer 31 elastic ring member 1 wafer 10 CMP device 1 la, 12a through hole 12 polishing pad 13a, 13b reference value 13a grinding end 16 dresser carrier 160 transparent window 2 slurry 30 fiber optic cable 17 1355027 35 light transmission film 40 control element BS beam splitter D detector LC laser collimator
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