TWI348456B - Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same - Google Patents

Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same

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Publication number
TWI348456B
TWI348456B TW096110603A TW96110603A TWI348456B TW I348456 B TWI348456 B TW I348456B TW 096110603 A TW096110603 A TW 096110603A TW 96110603 A TW96110603 A TW 96110603A TW I348456 B TWI348456 B TW I348456B
Authority
TW
Taiwan
Prior art keywords
same
containing same
interconnects
carbon nanotube
composite structures
Prior art date
Application number
TW096110603A
Other languages
Chinese (zh)
Other versions
TW200744946A (en
Inventor
Nachiket Raravikar
Daewoong Suh
Original Assignee
Intel Corp
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Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200744946A publication Critical patent/TW200744946A/en
Application granted granted Critical
Publication of TWI348456B publication Critical patent/TWI348456B/en

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TW096110603A 2006-03-31 2007-03-27 Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same TWI348456B (en)

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US11/394,904 US7713858B2 (en) 2006-03-31 2006-03-31 Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same

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TW200744946A TW200744946A (en) 2007-12-16
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Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070145097A1 (en) * 2005-12-20 2007-06-28 Intel Corporation Carbon nanotubes solder composite for high performance interconnect
US7713858B2 (en) 2006-03-31 2010-05-11 Intel Corporation Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same
US20080002755A1 (en) * 2006-06-29 2008-01-03 Raravikar Nachiket R Integrated microelectronic package temperature sensor
US7534648B2 (en) * 2006-06-29 2009-05-19 Intel Corporation Aligned nanotube bearing composite material
US20080227294A1 (en) * 2007-03-12 2008-09-18 Daewoong Suh Method of making an interconnect structure
US7710709B2 (en) * 2007-03-30 2010-05-04 Intel Corporation Carbon nanotube coated capacitor electrodes
US20100224998A1 (en) * 2008-06-26 2010-09-09 Carben Semicon Limited Integrated Circuit with Ribtan Interconnects
JP5186662B2 (en) * 2008-09-16 2013-04-17 富士通株式会社 Electronic component and method for manufacturing electronic component
US20100252317A1 (en) * 2009-04-03 2010-10-07 Formfactor, Inc. Carbon nanotube contact structures for use with semiconductor dies and other electronic devices
CN101899288B (en) * 2009-05-27 2012-11-21 清华大学 Thermal interface material and preparation method thereof
US8344295B2 (en) * 2009-10-14 2013-01-01 Korea University Research And Business Foundation Nanosoldering heating element
CN101894773B (en) * 2009-11-30 2011-10-26 上海上大瑞沪微系统集成技术有限公司 Preparation method of carbon nano tube salient points
KR101129930B1 (en) * 2010-03-09 2012-03-27 주식회사 하이닉스반도체 Semiconductor device and method for forming the same
CN101916735A (en) * 2010-07-19 2010-12-15 江阴长电先进封装有限公司 Manufacturing method of flip chip encapsulation structure taking carbon nano tube cluster as salient point of chip
KR101695353B1 (en) * 2010-10-06 2017-01-11 삼성전자 주식회사 Semiconductor package and semiconductor package module
US9704793B2 (en) * 2011-01-04 2017-07-11 Napra Co., Ltd. Substrate for electronic device and electronic device
CN102955588A (en) * 2011-08-17 2013-03-06 天津富纳源创科技有限公司 Touch-control type keyboard and manufacturing method thereof
KR101284796B1 (en) * 2011-10-05 2013-07-10 (주)포인트엔지니어링 method for light emitting device with can package and the light emitting device
CN102593710A (en) * 2012-03-21 2012-07-18 中国工程物理研究院应用电子学研究所 Packaging method for semiconductor laser
US8624396B2 (en) * 2012-06-14 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for low contact resistance carbon nanotube interconnect
US9209136B2 (en) * 2013-04-01 2015-12-08 Intel Corporation Hybrid carbon-metal interconnect structures
CN103227121A (en) * 2013-04-16 2013-07-31 上海大学 Method of realizing chip on glass with carbon nano tube bumps
US9318439B2 (en) 2014-03-21 2016-04-19 Taiwan Semiconductor Manufacturing Company Ltd. Interconnect structure and manufacturing method thereof
US9871101B2 (en) 2014-09-16 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
EP3453049A4 (en) 2016-05-06 2019-12-18 Smoltek AB Assembly platform
US20200041543A1 (en) * 2017-03-21 2020-02-06 Nidec-Read Corporation Probe structure and method for producing probe structure
US10068865B1 (en) * 2017-05-10 2018-09-04 Nanya Technology Corporation Combing bump structure and manufacturing method thereof
DE102017209554A1 (en) 2017-05-30 2018-12-06 Robert Bosch Gmbh Contact arrangement, composite foil and formation of a composite material
CN108258263B (en) * 2018-01-10 2020-04-24 哈尔滨工业大学 Low temperature sealing method for solid oxide fuel cell
WO2020018553A1 (en) 2018-07-16 2020-01-23 Rochester Institute Of Technology Method of site-specific deposition onto a free-standing carbon article
US10510871B1 (en) * 2018-08-16 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
CN112005451B (en) * 2019-03-26 2023-01-06 古河电气工业株式会社 Method for producing anisotropic conductive sheet
US11682641B2 (en) * 2020-08-13 2023-06-20 Microchip Technology Incorporated Integrated circuit bond pad with multi-material toothed structure

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066613A (en) * 1989-07-13 1991-11-19 The United States Of America As Represented By The Secretary Of The Navy Process for making semiconductor-on-insulator device interconnects
JP3441923B2 (en) * 1997-06-18 2003-09-02 キヤノン株式会社 Manufacturing method of carbon nanotube
US6129901A (en) * 1997-11-18 2000-10-10 Martin Moskovits Controlled synthesis and metal-filling of aligned carbon nanotubes
JP3902883B2 (en) * 1998-03-27 2007-04-11 キヤノン株式会社 Nanostructure and manufacturing method thereof
JP2000091371A (en) * 1998-09-11 2000-03-31 Seiko Epson Corp Semiconductor device and its manufacture
US6283812B1 (en) * 1999-01-25 2001-09-04 Agere Systems Guardian Corp. Process for fabricating article comprising aligned truncated carbon nanotubes
US6286226B1 (en) * 1999-09-24 2001-09-11 Agere Systems Guardian Corp. Tactile sensor comprising nanowires and method for making the same
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
DE10127351A1 (en) * 2001-06-06 2002-12-19 Infineon Technologies Ag Electronic chip comprises several external contacts of which at least two are provided with a plurality of nano-tubes for purposes of contacting an external contact of another electronic chip
JP3632682B2 (en) * 2001-07-18 2005-03-23 ソニー株式会社 Method for manufacturing electron emitter, method for manufacturing cold cathode field emission device, and method for manufacturing cold cathode field emission display
FR2827705B1 (en) * 2001-07-19 2003-10-24 Commissariat Energie Atomique TRANSISTOR AND METHOD FOR MANUFACTURING TRANSISTOR ON SIGE / SOI SUBSTRATE
US20030047527A1 (en) * 2001-09-10 2003-03-13 Advanced Micro Devices, Inc. Boat for ball attach manufacturing process
US20030099883A1 (en) * 2001-10-10 2003-05-29 Rosibel Ochoa Lithium-ion battery with electrodes including single wall carbon nanotubes
US20040029706A1 (en) * 2002-02-14 2004-02-12 Barrera Enrique V. Fabrication of reinforced composite material comprising carbon nanotubes, fullerenes, and vapor-grown carbon fibers for thermal barrier materials, structural ceramics, and multifunctional nanocomposite ceramics
TWI220162B (en) * 2002-11-29 2004-08-11 Ind Tech Res Inst Integrated compound nano probe card and method of making same
US7518247B2 (en) * 2002-11-29 2009-04-14 Nec Corporation Semiconductor device and its manufacturing method
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection
JP2004273401A (en) * 2003-03-12 2004-09-30 Matsushita Electric Ind Co Ltd Electrode connecting member, circuit module using it and manufacturing method therefor
US7112472B2 (en) * 2003-06-25 2006-09-26 Intel Corporation Methods of fabricating a composite carbon nanotube thermal interface device
US6989325B2 (en) * 2003-09-03 2006-01-24 Industrial Technology Research Institute Self-assembled nanometer conductive bumps and method for fabricating
JP4689218B2 (en) * 2003-09-12 2011-05-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
DE10359424B4 (en) * 2003-12-17 2007-08-02 Infineon Technologies Ag Redistribution board for narrow pitch semiconductor devices and method of making the same
US7211844B2 (en) * 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US7135773B2 (en) * 2004-02-26 2006-11-14 International Business Machines Corporation Integrated circuit chip utilizing carbon nanotube composite interconnection vias
FI121334B (en) * 2004-03-09 2010-10-15 Canatu Oy Method and apparatus for making carbon nanotubes
US20050285116A1 (en) * 2004-06-29 2005-12-29 Yongqian Wang Electronic assembly with carbon nanotube contact formations or interconnections
US7795134B2 (en) * 2005-06-28 2010-09-14 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids
US7618844B2 (en) * 2005-08-18 2009-11-17 Intelleflex Corporation Method of packaging and interconnection of integrated circuits
JP4855757B2 (en) * 2005-10-19 2012-01-18 富士通株式会社 Carbon nanotube pad and electronic device
US7371674B2 (en) * 2005-12-22 2008-05-13 Intel Corporation Nanostructure-based package interconnect
US7545030B2 (en) * 2005-12-30 2009-06-09 Intel Corporation Article having metal impregnated within carbon nanotube array
US7361972B2 (en) * 2006-03-20 2008-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Chip packaging structure for improving reliability
US7572300B2 (en) * 2006-03-23 2009-08-11 International Business Machines Corporation Monolithic high aspect ratio nano-size scanning probe microscope (SPM) tip formed by nanowire growth
US7453154B2 (en) * 2006-03-29 2008-11-18 Delphi Technologies, Inc. Carbon nanotube via interconnect
US7713858B2 (en) 2006-03-31 2010-05-11 Intel Corporation Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same

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US9214420B2 (en) 2015-12-15
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US20130341787A1 (en) 2013-12-26
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US7713858B2 (en) 2010-05-11
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US20100219511A1 (en) 2010-09-02
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WO2007123778A1 (en) 2007-11-01
US8344483B2 (en) 2013-01-01

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