TWI340481B - The method for promoting light emission efficiency of led using nano-rod structure - Google Patents

The method for promoting light emission efficiency of led using nano-rod structure

Info

Publication number
TWI340481B
TWI340481B TW096120916A TW96120916A TWI340481B TW I340481 B TWI340481 B TW I340481B TW 096120916 A TW096120916 A TW 096120916A TW 96120916 A TW96120916 A TW 96120916A TW I340481 B TWI340481 B TW I340481B
Authority
TW
Taiwan
Prior art keywords
nano
led
light emission
emission efficiency
rod structure
Prior art date
Application number
TW096120916A
Other languages
English (en)
Other versions
TW200849650A (en
Inventor
Hung Wen Huang
Tien Chang Lu
Ching Hua Chiu
Hao Chung Kuo
Shing Chung Wang
Original Assignee
Univ Nat Chiao Tung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Chiao Tung filed Critical Univ Nat Chiao Tung
Priority to TW096120916A priority Critical patent/TWI340481B/zh
Priority to JP2007289058A priority patent/JP5085283B2/ja
Priority to US11/984,247 priority patent/US7588955B2/en
Publication of TW200849650A publication Critical patent/TW200849650A/zh
Application granted granted Critical
Publication of TWI340481B publication Critical patent/TWI340481B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
TW096120916A 2007-06-11 2007-06-11 The method for promoting light emission efficiency of led using nano-rod structure TWI340481B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW096120916A TWI340481B (en) 2007-06-11 2007-06-11 The method for promoting light emission efficiency of led using nano-rod structure
JP2007289058A JP5085283B2 (ja) 2007-06-11 2007-11-06 柱状ナノ構造体（ナノロッド）を利用し発光ダイオード（ｌｅｄ）の発光効率を引き上げる方法
US11/984,247 US7588955B2 (en) 2007-06-11 2007-11-15 Method for promoting light emission efficiency of LED using nanorods structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096120916A TWI340481B (en) 2007-06-11 2007-06-11 The method for promoting light emission efficiency of led using nano-rod structure

Publications (2)

Publication Number Publication Date
TW200849650A TW200849650A (en) 2008-12-16
TWI340481B true TWI340481B (en) 2011-04-11

Family

ID=40096240

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096120916A TWI340481B (en) 2007-06-11 2007-06-11 The method for promoting light emission efficiency of led using nano-rod structure

Country Status (3)

Country Link
US (1) US7588955B2 (zh)
JP (1) JP5085283B2 (zh)
TW (1) TWI340481B (zh)

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GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
GB0701069D0 (en) * 2007-01-19 2007-02-28 Univ Bath Nanostructure template and production of semiconductors using the template
US8652947B2 (en) * 2007-09-26 2014-02-18 Wang Nang Wang Non-polar III-V nitride semiconductor and growth method
KR20100028412A (ko) * 2008-09-04 2010-03-12 삼성전자주식회사 나노 막대를 이용한 발광 다이오드 및 그 제조 방법
KR100994643B1 (ko) * 2009-01-21 2010-11-15 주식회사 실트론 구형 볼을 이용한 화합물 반도체 기판의 제조 방법과 이를 이용한 화합물 반도체 기판 및 화합물 반도체 소자
TW201203602A (en) * 2010-07-09 2012-01-16 Epistar Corp A light emitting device with a single quantum well rod
CN103190004B (zh) * 2010-09-01 2016-06-15 夏普株式会社 发光元件及其制造方法、发光装置的制造方法、照明装置、背光灯、显示装置以及二极管
WO2012029381A1 (ja) * 2010-09-01 2012-03-08 シャープ株式会社 発光素子およびその製造方法、発光装置の製造方法、照明装置、バックライト、表示装置、並びにダイオード
FR2964796B1 (fr) * 2010-09-14 2014-03-21 Commissariat Energie Atomique Dispositif optoelectronique a base de nanofils pour l'emission de lumiere
CN102959740B (zh) * 2010-09-14 2018-08-03 原子能与替代能源委员会 用于光发射的基于纳米线的光电器件
US8685858B2 (en) * 2011-08-30 2014-04-01 International Business Machines Corporation Formation of metal nanospheres and microspheres
DE102011056140A1 (de) 2011-12-07 2013-06-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
TWI460885B (zh) * 2011-12-09 2014-11-11 Univ Nat Chiao Tung 具有空氣介質層之半導體光電元件及空氣介質層之製作方法
KR101898679B1 (ko) 2012-12-14 2018-10-04 삼성전자주식회사 나노구조 발광소자
KR102022266B1 (ko) 2013-01-29 2019-09-18 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
KR101554032B1 (ko) 2013-01-29 2015-09-18 삼성전자주식회사 나노구조 반도체 발광소자
DE102013211707B4 (de) 2013-06-20 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Anordnung mit einem Träger, Array mit mehreren Anordnungen und Verfahren zum Herstellen einer Anordnung
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
FR3011381B1 (fr) 2013-09-30 2017-12-08 Aledia Dispositif optoelectronique a diodes electroluminescentes
CN106229394B (zh) 2016-10-19 2019-06-07 武汉华星光电技术有限公司 微发光二极管及其制造方法和显示器
CN107293625B (zh) * 2017-06-19 2019-02-22 南京大学 AlGaN异质结纳米柱阵列发光器件及其制备方法
US11069837B2 (en) * 2018-04-20 2021-07-20 Glo Ab Sub pixel light emitting diodes for direct view display and methods of making the same
KR20210095266A (ko) 2020-01-22 2021-08-02 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치

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JP2000077692A (ja) * 1998-09-03 2000-03-14 Canon Inc 光起電力素子及びその製造方法
JP2003101069A (ja) * 2001-09-25 2003-04-04 Nagoya Industrial Science Research Inst Ｉｉｉ族窒化物量子ドットおよびその製造方法
US7192533B2 (en) * 2002-03-28 2007-03-20 Koninklijke Philips Electronics N.V. Method of manufacturing nanowires and electronic device
JP4235440B2 (ja) * 2002-12-13 2009-03-11 キヤノン株式会社 半導体デバイスアレイ及びその製造方法
JP2005354020A (ja) * 2004-05-10 2005-12-22 Univ Meijo 半導体発光素子製造方法および半導体発光素子
US7147908B2 (en) * 2004-10-13 2006-12-12 Hewlett-Packard Development Company, L.P. Semiconductor package with getter formed over an irregular structure
TWI240443B (en) * 2004-12-17 2005-09-21 South Epitaxy Corp Light-emitting diode and method for manufacturing the same
JP2007214260A (ja) * 2006-02-08 2007-08-23 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法

Also Published As

Publication number Publication date
US7588955B2 (en) 2009-09-15
TW200849650A (en) 2008-12-16
JP2008306156A (ja) 2008-12-18
US20080305568A1 (en) 2008-12-11
JP5085283B2 (ja) 2012-11-28

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