TWI339860B - Method of manufacturing a semiconductor structure and method of manufacturing a shallow trench isolation structure - Google Patents

Method of manufacturing a semiconductor structure and method of manufacturing a shallow trench isolation structure

Info

Publication number
TWI339860B
TWI339860B TW096123740A TW96123740A TWI339860B TW I339860 B TWI339860 B TW I339860B TW 096123740 A TW096123740 A TW 096123740A TW 96123740 A TW96123740 A TW 96123740A TW I339860 B TWI339860 B TW I339860B
Authority
TW
Taiwan
Prior art keywords
manufacturing
trench isolation
shallow trench
semiconductor structure
isolation structure
Prior art date
Application number
TW096123740A
Other languages
English (en)
Other versions
TW200901305A (en
Inventor
Tu Hao Yu
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to TW096123740A priority Critical patent/TWI339860B/zh
Publication of TW200901305A publication Critical patent/TW200901305A/zh
Application granted granted Critical
Publication of TWI339860B publication Critical patent/TWI339860B/zh

Links

TW096123740A 2007-06-29 2007-06-29 Method of manufacturing a semiconductor structure and method of manufacturing a shallow trench isolation structure TWI339860B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW096123740A TWI339860B (en) 2007-06-29 2007-06-29 Method of manufacturing a semiconductor structure and method of manufacturing a shallow trench isolation structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096123740A TWI339860B (en) 2007-06-29 2007-06-29 Method of manufacturing a semiconductor structure and method of manufacturing a shallow trench isolation structure

Publications (2)

Publication Number Publication Date
TW200901305A TW200901305A (en) 2009-01-01
TWI339860B true TWI339860B (en) 2011-04-01

Family

ID=44721636

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096123740A TWI339860B (en) 2007-06-29 2007-06-29 Method of manufacturing a semiconductor structure and method of manufacturing a shallow trench isolation structure

Country Status (1)

Country Link
TW (1) TWI339860B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI702687B (zh) * 2017-05-31 2020-08-21 美商格芯（美國）集成電路科技有限公司 未平面化的淺溝槽隔離形成

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI762170B (zh) 2011-10-05 2022-04-21 美商應用材料股份有限公司 包括對稱電漿處理腔室的電漿處理設備與用於此設備的蓋組件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI702687B (zh) * 2017-05-31 2020-08-21 美商格芯（美國）集成電路科技有限公司 未平面化的淺溝槽隔離形成

Also Published As

Publication number Publication date
TW200901305A (en) 2009-01-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees