1338722 玖、發明說明： 【發明所屬之技術領域】 ^發明係種賴碳賴製程裝置、方法及製成品，特別是 一種藉由舰_錢合㉔金屬婦沉積含_氣合賴製程裝 置、方法與製成品。 【先前技術】 形成鑽石的主要韻、有四種，舰碳原子的外圍有四個可以化合 的。價電子(SV)。這鋪電子可軸sp。、spl、印2及sp3的混成轨道。 sp為未配位(OH))的零維原子點。spi為前後配位(CN=2)的—維原子 線(carbyne)。SP2為三向配位(CN=3)的二維分子面（石墨）。邠3為四 向配位版4)的三維原子體（鑽石）。這些碳源若能加壓鑽石的穩定 區，並加熱至能夠克服活化能⑻的溫度，即可形成鑽石。若所形成 的鑽石碳财同時含有sp3及sp2繼之薄膜，而顿巾含有印3比例 明顯較高’且具有鑽;5之雜者，冑可__碳(—61338722 玖, invention description: [Technical field to which the invention belongs] ^Inventive system, apparatus, method and finished product, especially a ship-making method, method and method With finished products. [Prior Art] There are four main rhymes for forming diamonds, and four of the periphery of the ship's carbon atoms can be combined. Price electron (SV). This paves the electronic shaft sp. , spl, im 2 and sp3 mixed orbit. Sp is a zero-dimensional atomic point of uncoordinated (OH). Spi is the carbyne of the collocation (CN=2). SP2 is a two-dimensional molecular plane (graphite) of three-way coordination (CN=3).邠3 is a three-dimensional atomic body (diamond) of the four-way coordination version 4). These carbon sources can form diamonds if they can pressurize the stable zone of the diamond and heat it to a temperature that overcomes the activation energy (8). If the diamond carbon formed contains sp3 and sp2 followed by the film, and the towel contains a relatively high proportion of the printed 3' and has a drill; 5 of the miscellaneous, 胄 _ _ carbon (-6
Carbon，DLC)。 一鑽石為碳的高壓相’故常在高壓下(靜態或爆炸加壓)合成。傳統 的尚溫尚壓鑽石合成方法是把石墨加壓至五萬個大氣壓（相當於月球 中心的壓力）以上，在高溫下（>1200。〇把石墨轉化成鑽石。但為使鑽 石顆粒長大，必須經過成核與生長的擴散過程，由於直接轉化成鑽石 所需的壓力及溫度太高，一般的高壓裝置雖能夠達到這個壓力與溫 度，但所合成的鑽石容積太小，不適合工業化生產。因此於合成鑽石 的過程中加入熔融的過渡金屬元素（鐵、鈷、鎳或其合金）等為催化 劑，可把合成鑽石的活化能降低，使鑽石可以在較低的壓力與溫度環 境下成長。鑽石合成的催化劑會與碳產生適度反應，其結果使碳形成 溶質，但不形成化合物。因此催化劑與碳產生反應將石墨組織互解打 散後即功成身退’使石墨散出的碳原子可自由流動碳在高壓下重組成 鐵石。Carbon, DLC). A diamond is a high-pressure phase of carbon, so it is often synthesized under high pressure (static or explosive pressurization). The traditional method of synthesizing still-pressed diamonds is to pressurize graphite to above 50,000 atmospheres (equivalent to the pressure at the center of the moon). At high temperatures (> 1200. 〇 convert graphite into diamonds. But to grow diamond particles It must undergo a diffusion process of nucleation and growth. Because the pressure and temperature required for direct conversion into diamonds are too high, the general high-pressure device can reach this pressure and temperature, but the volume of the synthesized diamond is too small to be suitable for industrial production. Therefore, by adding a molten transition metal element (iron, cobalt, nickel or alloy thereof) as a catalyst in the process of synthesizing diamond, the activation energy of the synthetic diamond can be reduced, so that the diamond can grow under a low pressure and temperature environment. The catalyst for diamond synthesis will react moderately with carbon, and as a result, the carbon will form a solute, but no compound will be formed. Therefore, the catalyst reacts with carbon to break up the graphite structure and then dissipate it. The free-flowing carbon recombines the iron under high pressure.
S 1338722 。成鐵石的方法雖有多種’但以鐵族為催化劑在穩定高壓下生長 方法為主流。另外也可以爆炸法把石墨在_(<1G_6秒)直接轉 /主近十齡來，鑽^也可以f私祕，叫軒為催化劑， 二的狀態下沉積*來，在穩定的高訂生長鑽石的速度可以石 生、1、觸制成分'恒溫的高低、加㈣Α小及生長的時間來控 |J。由於生長速度不同，合成鑽石的性質差異很大。 =物理氣相沉積⑽)*合成DLC時，個別的碳原子可加速至 =间.」◦〜⑽ev。這種高速運行的碳原子在撞擊基材時可有瞬 :產生極高的溫度及壓力。以具黯動能的碳原子撞擊其他碳原子 為例，其動能可在數微秒内轉的熱能而把撞擊點加溫至攝氏數千卢。 在撞擊的刹那所產生的壓力也可高達數萬個大氣壓。碳原子在撞又擊 時，動能通常會迅速移制四周的原子，故撞擊闕溫度及壓力會即 時降回常禮。因此’ PVD法合成鑽石時的局部溫度及壓力仍大於爆炸 法。事實上’ PVD法可視為把碳軒局部炸成鑽石的方法。以一個 具1〇〇eV的碳軒麟韻子®為例，其撞擊所產生的超聲波(Shock Wave)可同時把100萬個碳原子在瞬間壓成鑽石 綜合上述結果’合賴石必須在高溫及高壓下進行。傳統的高愿 法以電能持續加熱’將同時受壓的碳原子連續合成為鐵石。爆炸法乃 以化學能把全部碳軒加溫及施壓使部份碳原子在卿間轉化成 石。™法即為微觀的爆炸法，以電能把部份碳原子輪#撞擊 好比機搶掃射狀態。 麵碳（DLC)具有和天觸石減雜f，硬度高w變形 面平整光滑、低磨擦係數’所以耐雜相當好。且在結構上碳與 密的接合’形成缴密的堆積’因此無論氧化作用、化學侵钱及腐餘作 用均無法透過此-屏障層。因此以類鑽碳鍵在成形模具上使模具即 磨又抗蝕，提高模具使用壽命。 但DLC内的碳原子團極硬，這些不則碳原子的鍵結在被扭曲情形 下’會產生内應力。j_隨著賴厚度的增加，内應力會不斷累積，終 1338722 會使膜自基材界面剝離或附著力不佳。傳統的類鑽碳均直接或外加中 介層的方式鍍在基材上，這種類鑽碳膜無法在介面上產生強而有力的 化學鍵-反應成膜（reactive layer)，因此類鑽碳膜介面無法產生融 合作用，而產生薄膜與基材結合力不足且耐磨耗性明顯較低、破裂或 剝落，影響薄膜附著力。因此類鑽碳與金屬基材的附著性著仍是類鑽 碳膜應用上的最大問題。 【發明内容】 鑽石雖為最硬的材料，卻也甚脆且不耐撞擊，此即為類鑽碳膜應 用於沖壓性模具上最大缺點。因此如何提高DLC薄膜支撑性，使dlcS 1338722. Although there are many methods for forming iron, the growth method under stable high pressure is the mainstream with the iron family as a catalyst. In addition, it is also possible to use the explosion method to directly transfer graphite in _ (<1G_6 seconds) to the main ten-year-old. The drill can also be private, called Xuan as a catalyst, and deposited in the state of the second, in a stable high order. The speed of growing diamonds can be controlled by Shisheng, 1. Touching the 'high temperature, high temperature, plus (four) small and growing time | J. Due to the different growth rates, the properties of synthetic diamonds vary widely. = Physical vapor deposition (10)) * When synthesizing DLC, individual carbon atoms can be accelerated to =." ◦ ~ (10) ev. This high-speed operation of carbon atoms can be instantaneous when hitting a substrate: extremely high temperatures and pressures are generated. For example, when a carbon atom with kinetic energy strikes other carbon atoms, the kinetic energy can heat the impact point to several thousand celsius Celsius in a few microseconds. The pressure generated at the moment of impact can also be as high as tens of thousands of atmospheres. When a carbon atom collides and strikes, the kinetic energy usually shifts the atoms around it quickly, so the temperature and pressure of the impact will drop back to the regular ceremony. Therefore, the local temperature and pressure of the PVD synthetic diamond is still greater than the explosion method. In fact, the PVD method can be regarded as a method of partially frying carbon into diamonds. Take a 1 〇〇eV carbon Xuan Lin Yun Zi® as an example. The shock wave generated by the impact can simultaneously compress 1 million carbon atoms into diamonds. The above results are consistent with the above results. And under high pressure. The traditional high-vision method uses the continuous heating of electric energy to continuously synthesize the simultaneously compressed carbon atoms into iron. The explosion method uses chemical energy to warm and press all of the carbon atoms to convert some of the carbon atoms into stone. The TM method is a microscopic explosion method, in which some carbon atomic wheels are hit by electric energy, and the machine is in a state of being fired. The surface carbon (DLC) has a fineness f with the touch of the earth, and the hardness is high. The deformed surface is smooth and has a low friction coefficient, so the resistance is quite good. Moreover, the carbon-density bond on the structure forms a dense deposit, so that the barrier layer cannot be penetrated by oxidation, chemical intrusion and spoilage. Therefore, the mold is ground and resisted by the diamond-like carbon bond on the forming mold to improve the service life of the mold. However, the carbon atoms in the DLC are extremely hard, and the bonding of these non-carbon atoms will cause internal stress in the case of being twisted. J_ As the thickness of the lamella increases, the internal stress will continue to accumulate, and at the end of 1338722, the film will peel off from the substrate interface or the adhesion will be poor. Conventional diamond-like carbon is plated directly onto the substrate by means of an interposer. This diamond-like carbon film does not produce a strong chemical bond-reactive layer on the interface, so the diamond-like carbon interface cannot The fusion is produced, and the film has insufficient adhesion to the substrate and the wear resistance is significantly lower, cracking or peeling, which affects the adhesion of the film. Therefore, the adhesion of diamond-like carbon to metal substrates is still the biggest problem in the application of diamond-like carbon films. SUMMARY OF THE INVENTION Although the diamond is the hardest material, it is also very brittle and not impact-resistant. This is the biggest disadvantage of the diamond-like carbon film applied to the stamping mold. So how to improve the support of DLC film, so that dlc
薄膜具高強韌性及耐磨性等性質，即為本發明最大的目的。 本發明所使用的射頻濺鍍法可同時使用二個具不同成份的靶材 進行沉積，稱之「雙靶材非平衡磁控濺射系統」。雙靶材的設計可以 同時使用兩種不同的靶材濺鍍混合膜，或是利用直流及脈衝交錯的形 式，達到濺鍍金屬膜、陶瓷膜等等的效果。另外，也可以通入反應氣 體做反應性濺鍍，更提高了它的功能性。本發明之射頻濺鍍法於濺鍍 時把材連接陰極以吸引陽離子（如Ar+)，陽離子撞擊陰性纪材時會濺 出大量的二次電子(Secondary Electrons)，這些電子會把靶材加熱 使其損耗加速。本發明在靶材後加裝磁極可把釋出二次電子以螺旋狀The film has the properties of high strength, toughness and wear resistance, which is the biggest purpose of the invention. The RF sputtering method used in the present invention can simultaneously deposit two targets having different compositions, which is called "double target unbalanced magnetron sputtering system". The double target can be designed to simultaneously use two different targets to sputter the mixed film, or to use a DC and pulse staggered form to achieve the effect of sputtering a metal film, a ceramic film, and the like. In addition, it is also possible to introduce a reactive gas for reactive sputtering, which further enhances its functionality. The RF sputtering method of the present invention connects the cathode to the cathode during sputtering to attract cations (such as Ar+), and when the cation hits the negative precursor, a large amount of secondary electrons (Secondary Electrons) are splashed, and the electrons heat the target. Its loss is accelerated. The invention adds a magnetic pole to the target to release secondary electrons in a spiral shape
向靶材的中央。這些飛向靶材中央的二次電子會撞擊中性的氬離子使 其解離並釋出更多的衍生電子。這種連鎖反應會使氬離子的濃度提升 十倍，而且不會使靶材過熱。本發明所使用之磁控靶材會使濺射的效 率大增，錄膜腔體内的氣壓也可適度降低，而沉積品質較純也較高的 DLC 膜。 一般在鋼材上預鍍鑽石或類鑽碳膜，最大因難仍在於附著性不 佳，所產生的破裂或剝落…等問題i往很多學者都將研究重點放在 2介層或多層膜材料上的改善，但經實驗後發現成效仍顯不彰。因為 若要直接將鑽石或類鑽碳鍍在鋼基材上，由於二種材料活化能及熱脹 二相差很多，右僅純粹以物理結合力-機械互鎖（Mechanical 7 1338722 interlQdOit種觀結力的方式結合，實錄難達到_實用化的效 果。 本發明利用钻金屬與鑽石乾材混合沉積，銘在薄膜中松演著催 化、黏著及形成鍵結等4要角色。財薄咖將與鑽謂或基材介面 形成反應介面（騰tive layer)-錢散和化學反舰結發生，這種 強而有力鍵結方式_可形成高附紐、高_性且高耐絲性的纪 膜。 又 本發明利賴石賴缝製成的鑽石姆佩石餘材沉積類 錯碳與結(C。)金屬與混合沉積形成高附著性、高強·且高耐磨耗性 的薄膜。本發明之製程有三個優點如下： 1. 鈷為最佳的催化劑，可減低鑽石膜形成的壓力與溫度。鑽石 膜由於石墨在鈷内的溶解度遠高於鑽石，所以熔融的鈷有助 於把石墨催化成鑽石核，且類鑽碳膜中若有殘存的石墨會不 斷溶入钻中，而重新沉積出新的高品質鑽石膜，達到提昇薄 膜中鑽石/石墨鍵結的比例。 2. 鈷金屬扮演結合劑角色將與類鑽碳產生黏結(Cemented)體提 鬲薄膜韌性。鈷金屬與類鑽形成穩定的擴散或反應性化學鍵 結發生，這種混合體兼具類鑽碳的硬度、耐磨耗性及鈷的高 強韌性，混合成一種超硬材料的最佳組合。 3. 碳化鎮為工業常用的硬質材料，在碳化鎢模具或刀具上鍍鑽 石並不容易，由於鈷或其它鐵族金屬在常壓下加溫至7〇(rc 以上時會逐漸把鑽石催化成非鑽石的碳。所以鈷黏結的DLC 耐溫約700°C，成品使用中為了避免兩者之間熱膨脹的差異 或銘金屬催化的現象而剝離，本發明利用加入鈷金屬混合物 在DLC與基材WC間中間形成緩衝層。 【圖式簡單說明】 本發明以上所列舉之内容，將於往後之說明文字中輔以下列實施 例之圖形作更詳細的闡述。其中： 9 圖1為本發明雙靶材非平衡磁控濺射系統裝置示意圖。 圖2為本發明濺射含金屬類鑽混合鍍膜製程之步驟流程圖。 圖3為本發明濺射含金屬類鑽混合鍍膜製程的製成品剖面圖，係以圖 1之裝置及圖2鍍膜製程步驟製程結果。 【主要部分代表符號說明】 WO雙靶材電漿反應器 110第一非平衡濺射搶 112第二非平衡濺射搶 120第一靶材 122第二靶材 130反應腔體 140馬達 142旋轉式基座 144基材 150氣體源 152質流控制器 160真空幫浦 170射頻產生器 【實施方式】 本發明之一實施例如圖1所示。在圖1中，第一及第二非平衡磁 控搶110、112經由射頻產生器170施加射頻式交流功率於雙把材電 漿濺鍍反應器100内。電漿反應器100至少包括第一及第二非平衡磁 控搶110、112，其中第一及第二非平衡磁控搶110、112將第一及第 二靶材120、122固定作為濺鍍用的靶材。旋轉式基座142用以支撐 基材144，使基材144與靶材相對接受濺鍍物，旋轉式基座142同時 亦作為接地陽極，而第一及第二非平衡磁控槍11()、112則為陰極。 離操作氣體例如氩氣’係從氣體源15()經由質流控制器152到達反 1338722 f的區域形成電漿4空系統藉由真空幫浦⑽將反應器抽真空。本 明利用此系統控制各類鑽碳與催化金屬把材賴的效果，並控制各 把材減鮮，達到各_含金屬量類舰合麵的效果。 =發明之第—及第二非平衡磁控搶⑽、im計之優點為：毋 程巾更換|£材’使設備發揮最大功紐、達到降低製程成本、 無效率及成品率等商業價值。 圖2說明圖1所不雙树式料衡磁控騎纟航積含金屬麵 混合鏡卿流關。圖2指示本發明之骑製程巾鱗—步驟或決 定，但在實際執行程序中至少可包括—個或多個步驟。 ^如圖2所不，本發明首先進行步驟200以起始基材標準試片，接 著進行步驟202將基材硬化處理後，進行步驟2()4以檢驗是否達到要 求硬度。如果步驟204巾之判斷是肯定的，聽續進行赫基材處理 ^驟206 ’否則重回步驟2〇2進行基材硬化處理。在進行基材完成清 淨處理步驟2G6後，進行步驟2G8，將本發明之基材經氧氣吹乾後置 入腔體抽真空，以使基材置於真空環境。 本發明利用雙靶材非平衡磁控濺射系統控制含鈷類鑽混合碳膜 的品質’主要利用鑽石超微粉壓製成的鑽石靶材替代石墨靶材沉積類 錯碳膜’在薄膜製程中以氬氣作為濺鍍氣體，並加入氮、氫等氣體與 薄膜發生化學反應。另亦通入CH4氣體，作為輔助碳源以促成sp3鍵 結的穩定性’提高薄膜品質，降低内應力。在步驟21〇中，本發明依 照上述鍵膜特性設定控制鍍膜參數後，執行混合鍍膜步驟212，並取 出鍍膜完成的基材。 本發明於對鍍膜基材進行刮痕實驗步驟214後，進行步驟216， 以檢驗鍍膜品質是否符合所要求的附著性。如果步驟216中之判斷是 肯定的’則繼續進行時間及檢驗結果記綠步驟218，否則本發明之基 材將重回步驟206進行清淨處理。在基材完成步驟218之鍍膜檢驗記 錄後’本發明即在步驟220完成含金屬類鑽混合鍍膜。 圖3為本發明之濺射含金屬類鑽混合鍍膜製程的製成品剖面 1338722 圖。如圖3所示，第一緩衝層310形成於基材300之上，該第一緩衝 層310係為一過渡金屬層或一混合鍛膜層。一金屬及類鑽碳混合鍵膜 層320覆蓋於該第一緩衝層310之上，上述之金屬及類鑽碳混合鍍膜 層320係以Co、Fe、Ni及類鑽碳所組成之混合層。To the center of the target. These secondary electrons flying toward the center of the target collide with neutral argon ions to dissociate them and release more derivative electrons. This chain reaction increases the concentration of argon ions by a factor of ten and does not overheat the target. The magnetron target used in the present invention greatly increases the efficiency of sputtering, and the gas pressure in the film chamber can be moderately lowered, and the DLC film having a higher quality and higher deposition quality. Generally, diamond or diamond-like carbon film is pre-plated on steel. The biggest difficulty is still the poor adhesion, the cracking or peeling caused, etc. Many scholars have focused on 2 layers or multilayer film materials. Improvement, but after the experiment, the results are still not obvious. Because if diamond or diamond-like carbon is directly plated on a steel substrate, since the activation energy and thermal expansion of the two materials are much different, the right is only purely physical bonding-mechanical interlocking (Mechanical 7 1338722 interlQdOit seeding force) The combination of the methods, the actual recording is difficult to achieve the effect of _ practical. The invention uses the mixed deposition of drill metal and diamond dry material, in the film to loosen the role of catalysis, adhesion and bond formation. Or the substrate interface forms a reaction interface (Teng tive layer) - Qian San and chemical anti-ship knots, this strong and strong bonding method _ can form a high attachment, high _ and high silk resistance film. The diamond of the present invention is formed by depositing a miscible carbon and a carbon (C.) metal and a mixed deposition to form a film having high adhesion, high strength and high wear resistance. The process of the invention has three processes. The advantages are as follows: 1. Cobalt is the best catalyst to reduce the pressure and temperature of diamond film formation. Because diamond film has much higher solubility in cobalt than diamond, molten cobalt helps to catalyze graphite into diamond core. Diamond-like carbon If there is residual graphite, it will continue to dissolve into the drill, and a new high-quality diamond film will be re-deposited to increase the proportion of diamond/graphite bond in the film. 2. The role of cobalt metal as a binder will be produced with diamond-like carbon. Cemented to enhance the toughness of the film. Cobalt metal forms a stable diffusion or reactive chemical bond with the diamond-like drill. This mixture combines the hardness and wear resistance of diamond-like carbon with the high toughness of cobalt. An optimal combination of superhard materials. 3. Carbonized town is a hard material commonly used in industry. It is not easy to plate diamonds on tungsten carbide molds or tools, because cobalt or other iron group metals are heated to 7 常 under normal pressure ( When rc or more, the diamond is gradually catalyzed into non-diamond carbon. Therefore, the cobalt-bonded DLC has a temperature resistance of about 700 ° C, and the present invention utilizes in order to avoid the difference in thermal expansion between the two products or the phenomenon of metal catalysis. The cobalt metal mixture is added to form a buffer layer between the DLC and the substrate WC. [Simplified description of the drawings] The contents of the present invention will be supplemented by the following examples in the following description. 9 is a schematic diagram of the apparatus for the dual target unbalanced magnetron sputtering system of the present invention. Fig. 2 is a flow chart of the steps of the sputtering metal-containing mixed coating process of the present invention. The invention discloses a cross-sectional view of the finished product of the sputtering metal-containing mixed coating process, which is the process result of the apparatus of Fig. 1 and the coating process of Fig. 2. [Main part representative symbol description] WO double target plasma reactor 110 first non- Balanced sputtering grab 112 second unbalanced sputtering grab 120 first target 122 second target 130 reaction cavity 140 motor 142 rotary base 144 substrate 150 gas source 152 mass flow controller 160 vacuum pump 170 RF Generator [Embodiment] An embodiment of the present invention is shown in Fig. 1. In FIG. 1, first and second unbalanced magnetrons 110, 112 apply RF power to the dual-material slurry sputtering reactor 100 via RF generator 170. The plasma reactor 100 includes at least first and second unbalanced magnetrons 110, 112, wherein the first and second unbalanced magnetrons 110, 112 fix the first and second targets 120, 122 as sputtering Target used. The rotating base 142 is used to support the substrate 144, the substrate 144 is opposite to the target, and the rotating base 142 is also used as the grounding anode, and the first and second unbalanced magnetrons 11 () 112 is the cathode. From the operating gas, such as argon, from the gas source 15 () via the mass flow controller 152 to the region of the anti- 1338722 f to form a plasma 4 air system, the reactor is evacuated by a vacuum pump (10). The present invention utilizes this system to control the effects of various types of drilled carbon and catalytic metal materials, and controls the reduction of each material to achieve the effect of each type of metal-containing ship. = The first invention - and the second unbalanced magnetron grab (10), the advantage of the im meter is: 毋 巾 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换Figure 2 illustrates the non-double-tree type balance of the magnetic control rider in the air balance of the metal surface of the Figure 1. Figure 2 illustrates the riding process of the present invention - steps or decisions, but may include at least one or more steps in the actual execution of the procedure. As shown in Fig. 2, the present invention first performs step 200 to start the substrate standard test piece, and then proceeds to step 202 to harden the substrate, and then proceeds to step 2 () 4 to check whether the required hardness is achieved. If the judgment of the step 204 is affirmative, the processing of the substrate is continued, and the process of hardening the substrate is repeated. After the substrate is subjected to the cleaning treatment step 2G6, the step 2G8 is carried out, and the substrate of the present invention is dried by oxygen and placed in a cavity to be evacuated to place the substrate in a vacuum environment. The invention utilizes a double target unbalanced magnetron sputtering system to control the quality of a mixed carbon film containing cobalt-like diamonds. The diamond target prepared by using diamond ultrafine powder is used instead of the graphite target deposited carbon-like carbon film in the film process. Argon is used as a sputtering gas, and a gas such as nitrogen or hydrogen is chemically reacted with the film. CH4 gas is also introduced as an auxiliary carbon source to promote the stability of the sp3 bond, which improves the film quality and reduces the internal stress. In the step 21, in the present invention, after the plating film parameters are controlled in accordance with the above-described key film characteristics, the mixed plating step 212 is performed, and the substrate on which the plating is completed is taken out. After performing the scratch test step 214 on the coated substrate, the present invention proceeds to step 216 to verify whether the coating quality meets the required adhesion. If the determination in step 216 is affirmative, then the time and test result green step 218 is continued, otherwise the substrate of the present invention will return to step 206 for cleaning. After the substrate is completed in step 218, the coating inspection record is completed. In the present invention, the metal-containing diamond mixed coating is completed in step 220. Figure 3 is a cross-sectional view of a finished product of the sputter-containing metal-based diamond mixed coating process of the present invention, 1338722. As shown in FIG. 3, the first buffer layer 310 is formed on the substrate 300. The first buffer layer 310 is a transition metal layer or a mixed forged film layer. A metal and diamond-like carbon mixed key film layer 320 is overlaid on the first buffer layer 310. The metal and diamond-like carbon mixed coating layer 320 is a mixed layer composed of Co, Fe, Ni and diamond-like carbon.