TWI330417B - - Google Patents
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- Publication number
- TWI330417B TWI330417B TW96115532A TW96115532A TWI330417B TW I330417 B TWI330417 B TW I330417B TW 96115532 A TW96115532 A TW 96115532A TW 96115532 A TW96115532 A TW 96115532A TW I330417 B TWI330417 B TW I330417B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- die
- electrode
- substrate
- layer
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 56
- 239000013078 crystal Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 3
- 229910052707 ruthenium Inorganic materials 0.000 claims 3
- -1 yttrium oxide compound Chemical class 0.000 claims 3
- 235000012431 wafers Nutrition 0.000 claims 2
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96115532A TW200843141A (en) | 2007-04-30 | 2007-04-30 | Semiconductor lighting device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96115532A TW200843141A (en) | 2007-04-30 | 2007-04-30 | Semiconductor lighting device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200843141A TW200843141A (en) | 2008-11-01 |
| TWI330417B true TWI330417B (cg-RX-API-DMAC7.html) | 2010-09-11 |
Family
ID=44822232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96115532A TW200843141A (en) | 2007-04-30 | 2007-04-30 | Semiconductor lighting device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200843141A (cg-RX-API-DMAC7.html) |
-
2007
- 2007-04-30 TW TW96115532A patent/TW200843141A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200843141A (en) | 2008-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |