TWI329191B - - Google Patents
Download PDFInfo
- Publication number
- TWI329191B TWI329191B TW095118406A TW95118406A TWI329191B TW I329191 B TWI329191 B TW I329191B TW 095118406 A TW095118406 A TW 095118406A TW 95118406 A TW95118406 A TW 95118406A TW I329191 B TWI329191 B TW I329191B
- Authority
- TW
- Taiwan
- Prior art keywords
- pressure
- valve
- gas
- flow
- shut
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
- G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
- G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
- G05D7/0647—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged in series
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
- G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
- G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
- G05D7/0658—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged for the control of a single flow from a plurality of converging flows
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Fluid Mechanics (AREA)
- Measuring Volume Flow (AREA)
- Flow Control (AREA)
- Details Of Flowmeters (AREA)
Description
1329191 » * 九、發明說明: 【發明所屬之技術領域】 本發明係有關於校正在半導體製程之氣體系統使用的 流量控制器之絕對流量的方法。 【先前技術】 在半導體製程中之成膜裝置或乾式钱刻裝置等,使用1329191 » * IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of correcting the absolute flow rate of a flow controller used in a gas system of a semiconductor process. [Prior Art] Use in a film forming apparatus or a dry money engraving apparatus in a semiconductor process
例如錢或碟化氫等之特殊氣體、或氣氣等之腐钱性氣 體、及氫氣等之可燃性氣體。 必須嚴格地管理這些氣體的流量。 在其理由上,可列舉氣體流量直接影響處理之好壞。 即,在成膜處理膜質、在蝕刻處理電路加工之好壞受到氣 體机s的精度很大之影響’目而決定半導體製程之良率。 在其他的理由上,可列舉這種氣體很多對人體或環境 具有有害性或爆炸性等。〜,不充許使用後之這些氣影 直接排到大氣,必須因應於氣體種類具储除害手段。可是: 這種除害手段之一般處理性能受限,流動之流量超出容許 值時’無法完全處自,而可能向環境流出#害氣體,或導 致除害手段損壞β 又’攻些氣體’因為尤其在半導體製程可使用之高純 度且無塵者不僅昂貴,而且根據氣體種類有自然劣化之使 用限制’無法大#保管亦可列舉為理由。 另方面,在半導體製程之機器所要求的這些氣體之 抓里係約2〜2000Sccm,|求在很寬之範圍使高精度的固定 5 2097-8068-PF;Ahddub • 之流量流動。 因此自以往在半導體製程迴路内配置係流量控制器 •=周知的f量流量控制器,對各種氣體使最佳之流量流 里而且這種質量流量控制器,藉由變更施力σ電壓,而 變更設定流量,可應付處理處方之變更。 可是,在半導體製程使用之這些氣體,所謂的處理氣 體之中尤其成膜用材料氣體,其特性上即使在氣體管線i 亦具有析出固態物之可能性,可能改變流量體積。 • 質量流量控制器為了供給高精度的固定流量,而在内 部使用細管,在該部分即使少量地析出固態物,亦成為供 給之流量精度惡化的原因。又,因為使在蝕刻處理等使用 之腐姓性高的氣體流動,所以在質量流量控制器之内部使 用例如不銹鋼等耐蝕性高的材料,亦無法避免腐蝕,具有 發生老化的可能性,因而流量精度亦惡化。 如此’施加電壓和實際流量之關係變化,因為具有實 際流量變化的可能性,質量流量控制器需要定期地檢測並 I校正流量。 在該質量流量控制器之流量校正’雖然基本上使用膜 流量計,但是該量測係拆下配管之一部分後進行者,必須 在量測後再將配管安裝成原來之狀態’並檢漏。因而,作 業很費人力。 因此,不從配管拆下而讦進行流量校正係合乎理想。 在依然安裝配管之狀態下進行流置校正的方法上,雖 然亦想到利用處理室所具備之真空系’但是該方法在所需 2097-8068-PF;Ahddub 6 1329191 時間或精度上不充分。 例如’在根據量測固定容積之空間的麼降而算出流量 之build down方法校正質量流量控制器的流量之系統^有 本發明者已申請並獲得專利之專利文獻j等的方法。 在專利文獻1,揭示質量流量控制器之絕對流量的校 正系統。在第14圖表示其配管圖。 該系統,係在量測用氣體上使用如氮氣之惰性氣體, 從以既定之量測用氣體充滿氣體管線的狀態,#測通過質 量流直控制器10之㈣速度者。因而,在質量流量控制器 10的入σ和第—開_ _之間的配管110上,設置經由 壓力感測器11和量測用開閉閥1()1儲存量測用氣體的量測 用槽102’利用第-開閉閥1〇。切斷對質量流量控制器1〇 之處理氣體的供給後’打開量測用開閉閥1〇1,藉由利用 壓力感測器11量測既定之壓降所需的時間τ,而可容易且 簡單地校正質量流量控制器10之絕對流量。 ^但,在專利文獻i之方法,量測用氣體需要使用如策 軋之惰性氣體。這係由力,在量測流量時,將溫度設為定 值,而根據壓力之變化,利用理想氣體之狀態方程式算出 迴路内的體積,再根據經過時間τ和體積算出流量。 可是,貫際上在管線流動的處理氣體係壓縮流體,雖 然利用接近理想氣體之如氮氣的惰性氣體校正,但是未保 證和實際上使用處理氣體之情況的流量相等。 又’在進行這種量測之期間無法使用系統,又,在量 測完了後再起動系統時,因為至管線内之處理氣體的純= 2097-8068-pp;Ahddub 7 1329191 復為止需要時間’所以具有系統之運轉率降低的問題。 =,在專利文獻1之方法,即使已知質量流量控制器 1〇之流量特性偏離起始狀態,系統使用者亦需要另外校正。 因此,本發明者亦揭示如專利文獻2之方法。 在專利文獻2,揭示氣體配管系的校正系統。在第i 5 圖表示其配管的模式圖。 專利文獻2之發明,係進行將處理氣體從處理氣體源 經由具備第一開㈣! 〇〇、位於其下游之質量流量控制器 ίο、及位於其下游侧的終段切斷閥12〇之管線,供給處理 室121之氣體配管系的校正之系統,該系統具有量測在終 段切斷閥120之入口側的壓力之壓力感測器u,打開第一 開閉閥100並關閉終段切斷閥12〇,藉由以壓力感測器u 量測通過質里流量控制器〗〇將處理氣體引入終段切斷閥 120之上游側時的壓力上昇,而量測質量流量控制器“之 流量。 在該系統,校正質量流量控制器1〇之流量時,首先將 第一開閉閥100和終段切斷閥120都打開。此時,從處理 氣體源供給處理氣體,另一方面,比質量流量控制器10更 下游之部分和位於處理室121之下游的排氣泵連通。 在這種氣體配管系,通常排氣泵常設置於比處理室121 更下游,在此情況,該部分之壓力降低至真空附近。又, 在未》又置排氡泵之情況降低至大氣壓附近。而,利用壓力 感測器11量測壓力。 接著,關閉終段切斷閥12 0,切斷對處理室i 2丨侧的 2097-8068-PF;Ahddub 8 1329191 ::在為利用質量流量控制器10管制氣體流量, 〃里流篁控制器10和終段切斷閥120之間的部分因 處理氣體而麼力逐、叔μ 5 測值逐漸上昇,所=,因為壓力感測器11之量 流量。 “上幵校正質量流量控制器10的 具,而言’龍力上昇之隨時間的㈣,根據最小平 异斜率,藉由和起始之斜率比較而進行校正。 的校:而’可利用處理氣體進行質量流量控制器之流量 令 體 :,流量校正之結果,在質量流量控制器心流量偏 離起始值之情況,因為根據來自未圖示之本體控制器的指 自動進仃"υ之修正’可總是供給所設定之流量的氣 旦此外,在其他的方法上’在專利文獻3之方法,亦有 里測流量控制器的絕對流量之方法。 在專利文獻3’揭示翁贈暂县a曰 _ 乳體質!流量量測系統,在第16 圖表不示意圖。 在第16圖,將和壓力轉換 褥換态130連接之輸入端子134、 及在輸入端子134和輪出迪1 A η 存w ㈣端子142之間以電氣式連接的溫 度感測式電阻元件138連接,在輸出端子U2和接地136 之間以電氣式連接所固定之溫度感測式電阻元件140。 愿力轉換器130係任音夕拉Λ + 任意之精度比較高的壓力計,例如 係使用所量測之氣體壓力變瘫 曰應的可動之金屬隔膜的型式之 電谷式氣壓計。 2097-8068-PF;Ahddub 9 yi 利用和該壓力轉換器13〇以 卷氣式連接的電路,該電 阻元件之電阻值和溫度一起直接地^T 4i 设地(成正比地)變動,隨著 溫度上昇而增加,並隨菩,β痒 耆凰度下降而減少。和電阻元件138 接觸之氣體的溫度上昇時,i雷 /、電阻值增加。在所固定之溫 度感測式電阻元件140的兩端出現之輸出電壓v的大小因 而減夕_ &疋由於整體上信號電壓之更大部分在溫度感測 式電阻元件的兩端降低。 因此,提供-種比較簡單的裝置,藉由將該壓力轉換 盗130和設置於與未圖示之氣體源連接之質量流量控制器 10的下游侧之具有既定的容積之室連接,決定並校正質量 流量控制器1 〇之氣體的平均流量。 若依據專利文獻3之方法 莫耳數成正比之質量流量控制 體亦為處理氣體本身。此外, 亦不必個別地量測壓力和溫度 ’可得到和室内部之氣體的 器的流量’可量測被量測流 此時’不需要數學式計算, 專利文獻1 :特許第2635929號公報 專利文獻2 :特許第336781 1號公報 專利文獻3 :特許第3022931號公報 【發明内容】 【發明要解決之課題】 可是’使用者強烈要求想谁^ # 〜運仃根據質量流量控制器之 實際流體的絕對流量之校正,在直4 在專利文獻1,因為利用量 測用氣體進行絕對流量之校正,, 禾保證在使用處理氣體時 2097-8068-PF;Ahddub 10 流量是在:搞告.+ # , 理 為 ^ 田,專利文獻2,雖然利用實際使用的處 =可進行質量流量控制器之絕對流量的校正,但是因 s和壓力上昇率之起始f料比較而進行質量流量控制 €對流里的校正’係所謂的根據相對比較之流量校正 所以無法進行絕對流量的校正。 法曰在專利文獻3之方法,雖然使用處理氣體可進行質量 >·里控制θ之絕對流4的校正’但是實際上係使用高精度 之C力汁和溫度感測式電阻元件的絕對流量之校正系統, 在可進行高精度之流量的校正上十,雖然進行根據麼力之 修正、及根據流路内之流體的溫度之修正,但是未根據氣 體種類固有的係、數修正,是否可高精度地得到處理氣體之 絕對流量的值係不清楚,對此亦無詳細之記载。 即,在專利文獻1至專利文獻3的方法,難進行高精 度之絕對流量的校正。 此外,在專利文獻2之方法,容積固定係絕對條件。 在專利文獻2,需要在處理室所連接之流路的終段切 斷閥和質量流量控制器之間的空間之容積係固定,該空間 之谷積變化時,應成為基準的資料不存在,實質上改造以 後無法進行質量流量控制器之校正。 在專利文獻3可說亦一樣。記載,為了求得流量,使 用以壓力感測器為接觸器之電路,量測具有已知之固定體 積的室内之壓力上昇。因而,因改造而被量測空間的容積 變化,而無法正確地進行流量之校正。 又,在此所指之室,意指用以量測具有已知之固定體 2097-8068-PF;Ahddub 1329191 積的配管所連接的壓力之容器,雖然亦想到作成將室之容 積取充分大的系統,但是在空間限制嚴格的半導體製造裝 置不切實際。 < 可,,因製造計劃或設計變更等而可能頻繁地發生氣 體聚集早70之改造’使用者亦強烈要求可應付改造之絕對 流路量測手段的實現。 因此’本發明係、為解決上述之問題點而開發者,其目 的在於提供可實現如下事項的流量控制器之絕對流量的校 正系統,⑴利用處理氣體可進行由質量流量控制器所代表 之流量控制器的高精度之絕對流量的校正;(2)即使在因改 造等而流路之容積變化之情況’亦可求得該容積並進行流 量控制器之絕對流量的校正。 【解決課題之手段】 曰為了達成上述之目的,本發明之流量控制機器絕對流 罝檢測糸統具有如下之特徵。 ⑴-種流量控制器之絕對流量的校正系統,校正在具 有設置於將流量控制器之出口和處理室的入口連通的氣體 流路之第切斷閥及第二切斷閥的流量控制單元之該流旦 控制器的絕對流量, /机里 其特徵在於: 具有:排氣流路,將該第一輯閥及該第二切斷閱之 間的該氣體流路和真空果之入口連通;第三切斷閱與第四 切斷閥,設置於該排氣流路;壓力感測器和溫度感測器, 2097-8068-PF;Ahddub 12 1329191 • 5史置於該第三切斷閥和該第四切斷閥之間的該排氣流路; ::及校正用控制裝置,連接該壓力感測器和該溫度感測 窃’記憶氣體種類固有之邀縮因子資料、及由該流量控制 器的出口、該第二切斷閥、及該第四切斷閥所形成之既定 的空間之容積值; 從該校正用控制裝置之該壓縮因子資料讀出在第一量 測時與該壓力感測器之第一壓力值及該溫度感測器的第— 溫度值對應之第一壓縮因子值,並從該第一壓力值、該第 I 一溫度值、該容積值、及該第一壓縮因子值求得第一質量; 從該校正用控制裝置之該壓縮因子資料讀出在第二量 測時與該壓力感測器之第二壓力值及該溫度感測器的第2 度值對應之第二壓縮因子值,並從該第二壓力值、該第 二溫度值、該容積值、及該第二壓縮因子值求得第二質量; 根據該第一質量和該第二質量之差,校正該流量控制 益的絕對流量。 此外,在此所指的流量控制器意指由質量流量控制器 等所代表之控制流體的流量之機器。 又,在此所指的壓縮因子,係設在絕對溫度τ之氣體 1莫耳的體積為V、氣體常數為R時,將以Z = PV/RT所代表 的變數稱為壓縮因子》因為係表示實際氣體與理想氣體之 偏差者,根據亂體種類顯不相異的值,在理想氣體係。 又,Z亦稱為壓縮係數。 該壓縮因子如式子所示,係溫度和壓力之函數,雖然 在高溫、低壓時有變化小之傾向,但是在應用於半導體製 2097-8068-PF;Ahddub 1329191 ,造之處理氣體的情況,因為在常溫下使用之情況多,所以 • z之值根據溫度和壓力而m ’亦可使用替代壓縮因 . 子之如氣體種類固有的修正因數之誤差更小的變數。 =又,在此所指的壓縮因,意_對預先所量測 堡力和溫度之壓縮因子的數值資料化者具有根據氣體種 類亦相異的資者。但,若係僅用於所限定之氣體種類的情 -沉’亦可利用計算式算出,而不必具有資料。 在此所私的處理室,意指在其内部實施利用處理 • 氣體之半導體製程者。 (2)在(υ所記載之流量控制器的絕對流量之校正系 統’其特徵在於:該流量控制器係使預先決定之固定流量 /力L動者,在量測時,根墙福、典〜士曰〜1 根據通過該流篁控制器之流體的該固 定流量切換第一方式和第_ ^ 弟一方式,而該第一方式係以經過 時間為基準決定該第一量 里判時和該第一 $測時,而第二方 式係以既定壓力為基 曰 時。 +决疋該第一 1測時和該第二量測For example, a special gas such as money or hydrogen, or a smoldering gas such as gas or the like, and a combustible gas such as hydrogen. The flow of these gases must be strictly managed. For the reason, it can be mentioned that the gas flow directly affects the quality of the treatment. That is, the film processing quality and the processing of the etching processing circuit are affected by the high precision of the gas machine s, and the yield of the semiconductor process is determined. For other reasons, it is mentioned that such a gas is harmful or explosive to the human body or the environment. ~, do not allow these air shadows after use directly to the atmosphere, must be in accordance with the type of gas to save and destroy means. However, the general treatment performance of this means of decontamination is limited. When the flow rate exceeds the allowable value, 'it is not completely possible, and it may flow out to the environment# harmful gas, or cause the means of damage to damage β and 'attempt some gas' because In particular, high-purity and dust-free, which can be used in a semiconductor process, is not only expensive, but also has a limitation in the use of natural deterioration depending on the type of gas. On the other hand, in the semiconductor manufacturing process, the gas is required to be about 2 to 2000 Sccm, and the flow rate of the high-precision fixed 5 2097-8068-PF; Ahddub is required to be spread over a wide range. Therefore, since the conventional flow controller is disposed in the semiconductor process circuit, the well-known flow controller is used to optimize the flow rate of various gases, and the mass flow controller is changed by applying the σ voltage. Change the set flow rate to handle changes in processing prescriptions. However, among these gases used in the semiconductor process, among the so-called process gases, a material gas for film formation is particularly preferable in that the gas line i has a possibility of depositing a solid matter, which may change the flow volume. • The mass flow controller uses a thin tube inside to supply a high-precision fixed flow rate, and even if a solid substance is precipitated in a small amount in this part, the flow accuracy of the supply is deteriorated. In addition, since a gas having a high corrosion resistance such as an etching process is used, a material having high corrosion resistance such as stainless steel is used inside the mass flow controller, and corrosion cannot be avoided, and aging may occur. The accuracy also deteriorates. Thus the relationship between the applied voltage and the actual flow varies, and because of the possibility of actual flow changes, the mass flow controller needs to periodically detect and correct the flow. In the flow rate correction of the mass flow controller, although the membrane flowmeter is basically used, if the measurement system removes a part of the piping, the piping must be installed in the original state after the measurement and leak detection. Therefore, the work is labor intensive. Therefore, it is desirable to perform flow correction without removing the piping. In the method of performing the flow correction while the piping is still installed, it is also considered that the vacuum system provided in the processing chamber is used, but the method is insufficient in time or precision required for 2097-8068-PF; Ahddub 6 1329191. For example, the system for calculating the flow rate of the mass flow controller by the build down method for calculating the flow rate based on the measurement of the space of the fixed volume has been applied by the inventors of the present invention. In Patent Document 1, a correction system for the absolute flow rate of the mass flow controller is disclosed. The piping diagram is shown in Fig. 14. The system uses an inert gas such as nitrogen gas for the measurement gas, and fills the gas line with a predetermined amount of gas, and measures the speed of the controller 4 through the mass flow controller 10. Therefore, on the piping 110 between the σ and the first __ of the mass flow controller 10, the measurement of the gas for storing the measurement gas via the pressure sensor 11 and the measuring opening and closing valve 1 () 1 is provided. The groove 102' utilizes a first opening and closing valve 1'. After the supply of the processing gas to the mass flow controller 1 is cut off, the measurement opening/closing valve 1〇1 is opened, and the time τ required for measuring the predetermined pressure drop by the pressure sensor 11 can be easily performed. The absolute flow of the mass flow controller 10 is simply corrected. ^ However, in the method of Patent Document i, the gas for measurement needs to use an inert gas such as a rolling. This is the force. When measuring the flow rate, the temperature is set to a constant value. Based on the change in pressure, the volume in the loop is calculated using the equation of state of the ideal gas, and the flow rate is calculated based on the elapsed time τ and the volume. However, the compressed gas of the process gas system flowing continuously in the pipeline is corrected by an inert gas such as nitrogen close to an ideal gas, but the flow rate in the case where the process gas is actually used is not guaranteed. Also, 'the system cannot be used during this measurement, and when the system is restarted after the measurement is completed, because the processing gas to the pipeline is pure = 2097-8068-pp; Ahddub 7 1329191 takes time to recover' Therefore, there is a problem that the operating rate of the system is lowered. =, in the method of Patent Document 1, even if the flow characteristic of the mass flow controller 1 is known to deviate from the initial state, the system user needs to perform additional correction. Therefore, the inventors have also disclosed a method as disclosed in Patent Document 2. Patent Document 2 discloses a correction system for a gas piping system. A schematic diagram of the piping is shown in Fig. 5R. According to the invention of Patent Document 2, the processing gas is supplied from the processing gas source via the first opening (four)! 〇〇, the mass flow controller ίο located downstream thereof, and the pipeline of the final section shut-off valve 12〇 on the downstream side thereof, the system for supplying the gas piping system of the processing chamber 121, the system having the measurement at the end The pressure sensor u that cuts off the pressure on the inlet side of the valve 120 opens the first opening and closing valve 100 and closes the final section shut-off valve 12A, and measures the flow through the mass flow controller by the pressure sensor u. The pressure of the mass flow controller is measured when the process gas is introduced into the upstream side of the final stage shutoff valve 120, and the flow rate of the mass flow controller is measured. In this system, when the flow rate of the mass flow controller 1 is corrected, the first on-off valve is first used. Both the 100 and the final cut valve 120 are opened. At this time, the process gas is supplied from the process gas source, and on the other hand, the portion downstream of the mass flow controller 10 and the exhaust pump located downstream of the process chamber 121 are in communication. In this gas piping system, the exhaust pump is usually placed further downstream than the processing chamber 121, in which case the pressure of the portion is lowered to near the vacuum. Further, it is lowered to the vicinity of the atmospheric pressure in the case where the pump is not disposed. Use The force sensor 11 measures the pressure. Next, the terminal shut-off valve 120 is closed, and the 2097-8068-PF on the side of the processing chamber i 2 is cut off; Ahddub 8 1329191 :: is controlled by the mass flow controller 10 The gas flow rate, the portion between the turbulent flow controller 10 and the final section shut-off valve 120 is gradually increased due to the processing gas, and the value of the pressure sensor 11 is gradually increased. "The upper jaw corrects the mass flow controller 10, and the 'duty rise' over time (4) is corrected by the slope of the initial slope based on the minimum flat slope. School: and 'the flow rate controller of the mass flow controller can be used to process the gas: the result of the flow correction, the flow rate of the mass flow controller deviates from the starting value because it is based on the body controller from the unillustrated It means that the automatic correction "correction of 'υ can always supply the set flow of the gas. In addition, in other methods, the method of Patent Document 3 also has a method of measuring the absolute flow of the flow controller. In the patent document 3' reveals Weng gift temporary county a曰 _ milk body! The flow measurement system is not schematic in the 16th chart. In Fig. 16, an input terminal 134 connected to the pressure conversion 褥 state 130, and a temperature sensing resistance element 138 electrically connected between the input terminal 134 and the wheel DD 1 η storage w (four) terminal 142 are shown. Connected, the temperature sensing resistive element 140 is electrically connected between the output terminal U2 and the ground 136. The force converter 130 is a sound pressure gauge with a high precision. For example, it is a type of electric valley gas pressure gauge that uses a measured metal pressure to change the pressure of the metal diaphragm. 2097-8068-PF; Ahddub 9 yi utilizes a circuit that is connected to the pressure converter 13 卷 in a gas-filled manner, and the resistance value of the resistance element and the temperature are directly changed (directly proportional) by the ground, along with The temperature increases and increases, and decreases with the decrease of the degree of prion and β itch. When the temperature of the gas in contact with the resistive element 138 rises, the value of the i-ray / resistance increases. The magnitude of the output voltage v appearing across the fixed temperature sensing resistive element 140 is thereby reduced by a greater portion of the overall signal voltage across the temperature sensing resistive element. Therefore, a relatively simple device is provided which is determined and corrected by connecting the pressure conversion thief 130 to a chamber having a predetermined volume disposed on the downstream side of the mass flow controller 10 connected to a gas source not shown. Mass flow controller 1 The average flow of gas. According to the method of Patent Document 3, the mass flow control body proportional to the number of moles is also the process gas itself. In addition, it is not necessary to separately measure the pressure and the temperature 'the flow rate of the gas that can be obtained from the inside of the chamber' can be measured by the measured flow at this time. No mathematical calculation is required. Patent Document 1: Patent No. 2635929 2: Patent No. 3,367, 811, Patent Document 3: Japanese Patent Application No. 3022931 [Summary of the Invention] [The problem to be solved by the invention] However, 'the user strongly desires who to think ^ # 仃 仃 according to the actual fluid of the mass flow controller Correction of Absolute Flow Rate in Straight 4 In Patent Document 1, since the absolute flow rate is corrected by the gas for measurement, it is guaranteed to be 2097-8068-PF when using the process gas; the flow rate of Ahddub 10 is: , for the field, patent document 2, although the actual use of the = can be used to correct the absolute flow of the mass flow controller, but the s and the pressure rise rate of the starting material comparison to carry out mass flow control in the convection The correction is based on the so-called flow correction based on the relative comparison so that the absolute flow rate cannot be corrected. In the method of Patent Document 3, although the correction of the absolute flow 4 of θ is controlled by the use of the processing gas, the absolute flow rate of the high-precision C-force and the temperature-sensing resistance element is actually used. The correction system is capable of correcting the flow rate with high precision. Although it is corrected according to the force and corrected by the temperature of the fluid in the flow path, it is not corrected according to the type and number of the gas type. The value of obtaining the absolute flow rate of the processing gas with high precision is not clear, and there is no detailed description thereof. That is, in the methods of Patent Documents 1 to 3, it is difficult to correct the absolute flow rate with high precision. Further, in the method of Patent Document 2, the volume is fixed in an absolute condition. In Patent Document 2, it is necessary to fix the volume of the space between the end shutoff valve and the mass flow controller of the flow path to which the processing chamber is connected, and when the grain product of the space changes, the data to be the reference does not exist. The mass flow controller cannot be calibrated after substantial modification. The same can be said in Patent Document 3. It is described that in order to obtain the flow rate, the pressure sensor is used as a circuit for the contactor, and the pressure rise in the chamber having a known fixed volume is measured. Therefore, the volume of the measurement space is changed due to the modification, and the flow rate correction cannot be performed correctly. Further, the space referred to herein means a container for measuring the pressure to which the pipe having the known fixed body 2097-8068-PF; Ahddub 1329191 is connected, although it is also thought that the volume of the chamber is sufficiently large. System, but semiconductor manufacturing equipment with strict space constraints is impractical. < Yes, gas accumulation may occur frequently due to manufacturing plans or design changes, etc. The user also strongly demands the realization of an absolute flow path measurement method that can cope with the modification. Therefore, the present invention is directed to a developer who solves the above problems, and an object thereof is to provide a correction system for absolute flow rate of a flow controller that can realize the following matters: (1) The flow rate represented by the mass flow controller can be performed by using the processing gas. Correction of the absolute flow rate of the controller with high precision; (2) Even if the volume of the flow path changes due to the modification or the like, the volume can be obtained and the absolute flow rate of the flow controller can be corrected. [Means for Solving the Problem] In order to achieve the above object, the flow control machine absolute flow detection system of the present invention has the following features. (1) A correction system for the absolute flow rate of the flow controller, correcting the flow control unit having the first shutoff valve and the second shutoff valve provided in the gas flow path that connects the outlet of the flow controller and the inlet of the processing chamber The absolute flow rate of the flow controller is characterized in that: the exhaust flow path is connected to the gas flow path between the first valve and the second cut-off and the inlet of the vacuum fruit; a third cut-off and a fourth shut-off valve are disposed in the exhaust flow path; a pressure sensor and a temperature sensor, 2097-8068-PF; Ahddub 12 1329191 • 5 is placed in the third shut-off valve And the exhaust flow path between the fourth shut-off valve; and the control device for calibration, connecting the pressure sensor and the temperature-sensing stolen 'memory gas type inherently indentation factor data, and a volume value of a predetermined space formed by an outlet of the flow controller, the second shutoff valve, and the fourth shutoff valve; and the compression factor data read from the calibration control device is read during the first measurement The first pressure value of the pressure sensor and the first of the temperature sensor a first compression factor value corresponding to the degree value, and determining a first quality from the first pressure value, the first temperature value, the volume value, and the first compression factor value; The compression factor data reads a second compression factor value corresponding to the second pressure value of the pressure sensor and the second degree value of the temperature sensor during the second measurement, and from the second pressure value, the The second temperature value, the volume value, and the second compression factor value determine a second mass; and the absolute flow rate of the flow control benefit is corrected according to the difference between the first mass and the second mass. Further, the flow controller referred to herein means a machine that controls the flow rate of a fluid represented by a mass flow controller or the like. In addition, the compression factor referred to here is set to the absolute temperature τ, the gas 1 mol volume is V, and the gas constant is R, the variable represented by Z = PV/RT is called the compression factor. The deviation between the actual gas and the ideal gas is based on the value of the disorder and is in the ideal gas system. Also, Z is also called a compression factor. The compression factor is a function of temperature and pressure as shown by the equation, and although there is a tendency to change little at high temperatures and low pressures, it is applied to a process gas produced by a semiconductor manufacturer 2097-8068-PF; Ahddub 1329191. Since there are many cases of use at normal temperature, the value of z can be used instead of compression depending on temperature and pressure. The error of the correction factor inherent to the gas type is smaller. = Again, the compression factor referred to here, the value of the compression factor for the pre-measured fort and force, has different sources depending on the gas species. However, if it is used only for the type of gas to be defined, it can be calculated by a calculation formula without having to have data. A processing chamber that is private here means a semiconductor process in which a process using a gas is performed. (2) The correction system for the absolute flow rate of the flow controller described in the section is characterized in that the flow controller is a predetermined fixed flow rate/force L, and at the time of measurement, the root wall ~ 士曰~1 switches the first mode and the first mode according to the fixed flow rate of the fluid passing through the flow controller, and the first mode determines the first amount of time and the time based on the elapsed time The first time is measured, and the second mode is based on the predetermined pressure. The first 1 time and the second measure are determined.
在此所指之經過時 正的誤差變小,根據流 所需時間愈長。 間’係為了使流量控制器之流量校 里而變者’根據實驗確認流量愈低 产量押二此所指之既定心,係為了取代經過時間校正 二:流量而採用的壓…在校正使用之處理氣 體的机篁多之情況’ θ 進旦制土 坚力蚵間上幵,所以以壓力為基 Μ者以較高精度地量測,根㈣驗亦破認。 3)-種流量控制器之絕對流量的校正系統,校正在具 2097-8〇68-PF;Ahddub 有δ又置於將流量控制器 流路之第一切斷閥及第 控制器的絕對流量, 其特徵在於:The positive error at the time of the passage indicated here becomes smaller, and the longer the time required according to the flow. In order to make the flow controller flow change, the experiment is to confirm that the lower the flow rate, the lower the output, and the pressure that is used to replace the time-corrected two: flow rate... There are many cases in which the gas is handled. θ The strength of the earth is strong, and the pressure is based on the measurement. The root (four) test is also broken. 3) - Correction system for the absolute flow of the flow controller, corrected to have a temperature of 2097-8〇68-PF; Ahddub has δ and is placed at the absolute flow of the first shut-off valve and the controller of the flow controller flow path , which is characterized by:
具有:排氣流路,將該第—切斷閥及該第二切斷閥之 間的該虱體流路和真空泵之人口連通;第三切斷閥與第四 切斷閥’ S又置於該排氣流路;壓力感測器和溫度感測器, 6又置於該第二切斷閥和該第四切斷閥之間的該排氣流路; 以及校正用控制裝置,連接該壓力感測器和該溫度感測器; 又具有:第一密閉空間,藉由該第一切斷閥、該第二 切斷閥、及該第三切斷閥關閉而形成;及第二密閉空間, 藉由該第三切斷閥及該第四切斷閥關閉而形成,以該第三 切斷閥和該第一密閉空間所隔開之容積V2係已知; 將氣體充滿該第一密閉空間及該第二密閉空間,並量 測壓力P,、溫度Tl ;And an exhaust gas flow path connecting the body flow path between the first shutoff valve and the second shutoff valve and a population of the vacuum pump; the third shutoff valve and the fourth shutoff valve are further disposed In the exhaust flow path; a pressure sensor and a temperature sensor, 6 is further disposed between the second shutoff valve and the fourth shutoff valve; and a correction control device, connected The pressure sensor and the temperature sensor further comprise: a first sealed space formed by the first shut-off valve, the second shut-off valve, and the third shut-off valve being closed; and the second The sealed space is formed by closing the third shutoff valve and the fourth shutoff valve, and the volume V2 separated by the third shutoff valve and the first sealed space is known; a confined space and the second confined space, and measuring the pressure P, the temperature Tl;
之出口和處理室的入口連通的氣體 二切斷閥的流量控制單元之該流量 將該第一密閉空間及該第二密閉空間抽真空,並量測 抽真空後之壓力ρ2、溫度Τ2 ; 打開該第三切斷閥,而將該第—密閉空間及該第二密 閉空間連通,在時間後量測壓力ρ3和溫度丁3 ; 根據該壓力Pi、該溫度Tl、該壓力ρ2、该溫度Τ2、該 壓力Ρ3、該溫度Τ3、及該容積V2,求得該第〆密閉空間之 容積V,。 【發明效果】 2097-8068-PF;Ahddub 15 1^29191 利用具有上述的特徵之本發明的流量控制器之絕對流 量的校正系統’可得到如以下所示之作用、效果。 (1)一種流量控制器之絕對流量的校正系統,校正在具 有X置於將/爪里控制器之出口和處理室的入口連通的氣體 饥路之第一切斷閥及第二切斷闊的·流量控料&之該流量 控制器的絕對流量,因為其特徵在於: 具有:排氣流路,將該第一切斷閥及該第二切斷閥之 間的該氣體流路和真空泵之人口連通;第三切斷閥與第四 切斷閥’言史置於該排氣流路;壓力感測器和溫度感測器, 设置於該第三切斷閥和該第四切斷閥之間的該排氣流路; 以及校正用控制裝置,連接該壓力感測器和該溫度感測 器’記憶氣體種類固有之壓縮因子資料、及由該流量控制 器的出口、該第二切斷閥、及該第四切斷閥所形成之既定 的空間之容積值; 從該校正用控制裝置之該壓縮因子資料讀出在第一量 測時與該壓力感測器之第一壓力值及該溫度感測器的第I 度值對應之第一壓縮因子值,並從該第一壓力值、該第 一溫度值、該容積值、及該第一壓縮因子值求得第一質量. 從該校正用控制裝置之該壓縮因子資料讀出在第一量 測時與該壓力感測器之第二壓力值及該溫度感測器的第I 溫度值對應之第二壓縮因子值,並從該第二壓力值、該第 二溫度值、該容積值、及該第二壓縮因子值求得第二質量. 根據該第一質量和該第二質量之差,校正該&量控 器的絕對流量; 2097-8068-PF;Ahddub 16 丄329191 所以’不是如接近理想氣體之氮氣的量測用氣體,而 使用實際上流向質量流量控制器之處理氣體,可進行流 控制=之絕對流量的校正,又因為利用和在各時刻之壓力 和/皿度值各個對應的㈣因子修正理想氣體之狀態方程 、算出所以知到精度高之絕對流量,因而具有可進 流量控制器之絕對流量的校正之優異的效果。 在使用理想氣體之狀態方程式算出絕對流量n兄, 因為和實際氣體的絕對流量發生偏差,所以為了修正實際 氣體之非理相的集、 似的舉動,如專利文獻3所示,使用簡單之修 正係數修正。 > 可是’因為顯示非理想之舉動的壓縮因子係虔力和溫 度之函數1縮因子之值根據在該量測時刻之壓力和溫度 而變’,藉由在第一量測時和第二量測時使用和各自 之Μ力和溫度對應的第一壓縮因子和第二壓縮因子,可算 出在各量測時之適當的絕對流量。 旦、目為如此使用實際氣體可求得精度佳之絕對流 :二斤:如使用量測用氣體校正之情況般和實際的使用狀 ^無相異’可根據絕對流量校正,因為藉此校正,所以可 旱握供給半導體機器之氣體的絕對流量。 (2)在⑴所記載之流量控制器的絕對流量之校正系 ::為其特徵在於:該流量控制器係使預先決定之固定 :二Ϊ者’在量測時’根據通過該流量控制器之流體的 該固Γ量切換第—方式和第二方式,而該第一方式係以 準决疋該第一置測時和該第二量測時,而第 2097-8068-PF;Ahddub 17 1329191 ♦ 一量測時和該第二量 控制器之氣體的流量 . 二方式係以既定壓力為基準決定該第 . 測時;所以具有可進行合乎通過流量 . 之高精度的校正之優異的效果。 旦*向係氣體聚集單元具有之流量控制器的例如質量流 量控制器之處理氣體的流量,—般在通過f量流量控制器 ,流量具有2咖〜2_咖之範圍,在進行質量流量 器之絕對流量的校正之情況 二 ^ ^亦尚要以和使用狀態相同之 設定流量校正。The flow rate control unit of the gas two shut-off valve connected to the inlet of the processing chamber evacuates the first sealed space and the second sealed space, and measures the pressure ρ2 after vacuuming, and the temperature Τ2; The third shut-off valve connects the first closed space and the second closed space, and measures the pressure ρ3 and the temperature D3 after the time; according to the pressure Pi, the temperature T1, the pressure ρ2, the temperature Τ2 The pressure Ρ3, the temperature Τ3, and the volume V2 determine the volume V of the second closed space. [Effect of the Invention] 2097-8068-PF; Ahddub 15 1^29191 The action and effect as shown below can be obtained by using the correction system of the absolute flow rate of the flow controller of the present invention having the above characteristics. (1) A correction system for the absolute flow rate of the flow controller, correcting the first shut-off valve and the second cutting width of the gas hungry road having the X placed in the inlet of the controller/claw controller and the inlet of the processing chamber The flow rate control & absolute flow rate of the flow controller is characterized by: having: an exhaust flow path, the gas flow path between the first shutoff valve and the second shutoff valve The population of the vacuum pump is connected; the third shut-off valve and the fourth shut-off valve are placed in the exhaust flow path; the pressure sensor and the temperature sensor are disposed on the third shut-off valve and the fourth cut The exhaust flow path between the shut-off valves; and a correction control device that connects the pressure sensor and the temperature sensor's inherent compression factor data of the memory gas type, and the outlet of the flow controller, the first a volume value of a predetermined space formed by the second shutoff valve and the fourth shutoff valve; reading the compression factor data from the calibration control device at the first measurement time and the first of the pressure sensor The first compression factor corresponding to the pressure value and the first degree value of the temperature sensor And determining a first quality from the first pressure value, the first temperature value, the volume value, and the first compression factor value. Reading the compression factor data from the calibration control device in the first amount And measuring a second compression factor value corresponding to the second pressure value of the pressure sensor and the first temperature value of the temperature sensor, and from the second pressure value, the second temperature value, the volume value, And determining the second quality by the second compression factor value. Correcting the absolute flow of the & controller according to the difference between the first mass and the second mass; 2097-8068-PF; Ahddub 16 丄329191 so 'not For example, the gas for measuring the nitrogen gas close to the ideal gas, and the processing gas actually flowing to the mass flow controller, can be used to correct the flow rate of the absolute flow, and because of the pressure and/or value at each moment. Each of the corresponding (four) factors corrects the state equation of the ideal gas, and calculates an absolute flow rate with high accuracy, so that it has an excellent effect of correcting the absolute flow rate of the flow rate controller. In the equation of the state in which the ideal gas is used, the absolute flow rate n brother is calculated, and since the absolute flow rate of the actual gas is deviated, in order to correct the set of the non-physical phase of the actual gas, as shown in Patent Document 3, a simple correction coefficient is used. Corrected. > However, 'because the compression factor showing the non-ideal behavior is a function of the force and temperature, the value of the reduction factor is changed according to the pressure and temperature at the measurement time, by the first measurement and the second The appropriate absolute flow rate at each measurement can be calculated using the first compression factor and the second compression factor corresponding to the respective forces and temperatures during the measurement. Once, the actual flow of gas can be used to obtain the absolute flow with good precision: two kilograms: if the gas calibration is used, the actual use shape is not different, and it can be corrected according to the absolute flow rate. The absolute flow rate of the gas supplied to the semiconductor machine can be gripped. (2) The correction of the absolute flow rate of the flow controller described in (1): It is characterized in that the flow controller is fixed in advance: the second one is 'measured' according to the flow controller The solid amount of the fluid switches between the first mode and the second mode, and the first mode is used to determine the first set time and the second measure time, and the 2097-8068-PF; Ahddub 17 1329191 ♦ The flow rate of the gas during the measurement and the second amount of the controller. The second method determines the first measurement time based on the predetermined pressure; therefore, it has an excellent effect of performing high-precision correction in accordance with the flow rate. . The flow rate of the processing gas, such as the mass flow controller, of the flow controller of the gas concentration unit, is generally in the range of 2 coffee to 2 _ coffee flow through the flow controller of the f, and the mass flow rate is performed. The case of the correction of the absolute flow rate is also corrected by the set flow rate which is the same as the state of use.
可疋’壓力和時間具有正比關係,雖然在流量少之情 況’因:壓力报難上昇,所以要看到變化需要花時間,但 是在流量多之情況,壓力在短時間内變化。 =在此情況’由於機器之響應性的問題,在太短的時間 内壓力上昇之情況’以經過時間為基準量測壓力時,具有 精度惡化的可能性。 又,因為係在接近最大範圍之部分的量測,所以根據 曰應精度’亦具有超出麗力感測器之量測範圍的可能性。 雖然認為只要各自具備塵力感測器即彳,但是精度高之壓 :感測器昂貴,在空間效率上亦要求更密集化之氣體聚集 导元成為問題。 因此,藉由採用在流量少之情況以經過時間為基準, 而在流量彡的情況以既定壓力為基準量渴j,並才交正絕對流 量之系統,而可實現低價格、在空間效率上亦優異、及高 精度之流量校正。 (3)—種流量控制器之絕對流量的校正系統校正在具 2097-8068-PF;Ahddub 18 1329191 f設置於將流量控制器之出口和處理室的入口連通的氣體 抓路之第一切斷閥及第二切斷閥的流量控制單元之該流量 控制器的絕對流量,因為其特徵在於: 具有:排氣流路,將該第一切斷閥及該第二切斷閥之 門的該氣H和真空泵之人σ連通;第三切斷閥與第四 斷閥-又置於a玄排氣流路;屬力感測器和溫度感測器, 設置於該第三切斷閥和該第四切_之間的該排氣流路; 、及校正用控制裝置,連接該屋力感測器和該溫度感測器; 又具有:第-密閉空間,藉由該第一切斷閥、該第二 切斷閥、及該第三切斷閥關閉而形成;及第二密閉空間, 藉由6玄第二切斷閥及該第四切斷閥關閉而形成,以該第三 切斷閥和該第一密閉空間所隔開之容積^係已知; 將氣體充滿該第一密閉空間及該第二密閉空間,並量 測壓力Pi、溫度Τι ; 間抽真空,並量測“The pressure and time have a proportional relationship, although the flow rate is low.” Because the pressure report is difficult to rise, it takes time to see the change, but in the case of a large flow, the pressure changes in a short time. = In this case, 'the pressure rises in a too short period of time due to the responsiveness of the machine'. When the pressure is measured based on the elapsed time, the accuracy may deteriorate. Moreover, since it is measured in a portion close to the maximum range, it is also possible to exceed the measurement range of the Lili sensor according to the response accuracy. Although it is considered that each of them has a dust sensor, it is a high-precision pressure: the sensor is expensive, and a space-efficient gas deposition guide is also required to be a problem. Therefore, by adopting a system in which the flow rate is low based on the elapsed time and the predetermined pressure is used as the reference amount in the case of the flow rate, and the absolute flow rate is corrected, the low price and the space efficiency can be achieved. Excellent and accurate flow correction. (3) The correction system for the absolute flow of the flow controller is corrected to have a first cut off of the gas gripping path that is connected to the inlet of the flow controller and the inlet of the processing chamber with the 2097-8068-PF; Ahddub 18 1329191 f The absolute flow rate of the flow controller of the flow control unit of the valve and the second shut-off valve is characterized by: having: an exhaust flow path, the door of the first shut-off valve and the second shut-off valve The gas H and the vacuum pump are connected to the σ; the third shut-off valve and the fourth shut-off valve are again placed in a quasi-exhaust flow path; the force sensor and the temperature sensor are disposed on the third shut-off valve and The exhaust flow path between the fourth cuts; and the correction control device connected to the house force sensor and the temperature sensor; further comprising: a first closed space, by the first cut a valve, the second shutoff valve, and the third shutoff valve are closed; and the second closed space is formed by closing the 6th second shutoff valve and the fourth shutoff valve, and the third The volume separated by the shutoff valve and the first closed space is known; the gas is filled in the first closed space and the second closed Room, and measuring a pressure Pi, temperature Τι; Room evacuated and measuring
將該第一密閉空間及該第二密閉 抽真空後之壓力Ρ2、溫度丁2 ; 打開該第三切斷間,而將該第一密閉空間及該第二密 閉空間連通,在時間後量測壓力Ρ3和溫度τ“ 該壓力F»2、該溫度T2、該 ’求得該第一密閉空間之 根據該壓力Pi、該溫度τ,、 S力P3、該溫度T3、及該容積' 容積V,; ’且不使用如降低氣體 ’開閉流路所具備之切 藉由量測壓力和溫度, 所以,不使用特殊之量測機器 5^集迴路之空間效率的量測用槽等 斷閥,而將流路内之空間當作槽, 2097-8068-PF;Ahddub 19 而可求得未知之交接曰 積’具有係因改造等而流路的體積變化 之情況,亦可推¢-、Α θ , ^ 進仃w置控制器之絕對流量的校正之優異的 效果。 、 。。為I校正流量控制器之絕對流量,需要正確地掌握機 盗及配ε内°p的容積。這係由於使用利用壓縮因子所修正 、理心虱體的狀態方程式計算流向流量控制器之流量,所 以未正確地知道容積時無法計算的緣故。 ^因此,若有如此求得容積之方法,進行改造,亦可特 定在組裝狀態的容積’❺了有助於縮短時間以外,而且亦 具有無分解後組裝時所產生之容積誤差的問題之優異的效 果0 【實施方式】 以下,使用圖面說明本發明之實施例。最初說明第 實施例之構造。 (第1實施例) 第1圖表示用以校正在半導體製程使用之流量控制器 的絕對流重之必需的最小構造之流路構造圖。 係流體控制器之質量流量控制器1G,和與在其内部利 用處理氣體實施半導體製程之處理室13的入口連接之氣 體流路30連接。X ’第一切斷閥21和第二切斷閥22設置 於將質量流量控制器10之出口和處理室13的入口連通之 氣體流路30上。 此外,在第一切斷閥21和第二切斷閥22之間,連接 2097-8068-PF;Ahddub 20 1329191 和真空泵14連接之排氣流路31。又,在該排氣流路μ設 置第三切斷閥23及第四切斷閥24,在第三切斷閥23和第 四切斷間24之間設置壓力感測器11和溫度感測器12。 此外,為了便於說明,將這些第三切斷閥23、壓力感 測器11 ’现度感測器12、及第四切斷閥24之設置於排氣 流路31的部分稱為校正單元20。 該第一切斷閥21、第二切斷閥22、第三切斷閥23、 ^第四切斷閥24係和未圖示之流體連接單元連接的氣壓 操作式之膜m雖然該切斷閥未必需要係氣壓操作式, 但是在半導體製程’因為如上述所示亦有使用可燃性氣體 的情況’心係、防爆規格較佳,當使用氣壓操作式者。 校正單元20實際上安裝於如第2圖所示之迴路。 第2圖係表示實際管線之一部分的配管圖。 即,多條氣體管路,在第2圖為第一氣體供給路33、 第一氣體供給路34、及第三氣體供給路35之3條流路, 』由質量机量控制器1 〇和氣體流路30連接,在第一切斷 渴1年第一切斷閥2 2之間的氣體流路3 〇連接並設置排氣 流路31。 ' 此外,在第一氣體供給路33、第二氣體供給路34、及 第三氣體供給路35,言免置壓力計15或第五切斷閥28,並 ,接經由第—沖洗閱25及第二沖洗閥26所連接的沖洗用 管線32 ’在進行N2沖洗之情況使用。 又冲洗用^線32除了具備壓力計15及調壓器16以 外,又經由第三沖洗閥27和氣體流路30合流。 21 2097-8068-PF;Ahddub 1329191 在排氣流路3 I巧番# > „ 楚 °置係校正單元20之第三切斷閥 第四切斷閥24、μ六忒⑴ 並和真空 纟力感測益11、及溫度感測器12, 复& 連接而氣體流路30和處理室13連接。 線之一在、二實際之使用例上,第3圖表示係實際管 氣體聚集單元之構造圖,第4圖表示其側視圖。 乂正单元20如第q阁张一 —1 3圓所不’設置於氣體聚集單元之一 二進行設置於各方塊之質量流量控制器1〇的校正。此 β第3圖㈣和第2圖對應並僅畫3條氣體供給路, 但疋在實際之氣體聚集單元,可連接更多條氣體供給路。 而且’將這些氣體供給路作為—個單元收容於氣體盒。 -本發月藉由將没置於如上述所示之構造的氣體聚集單 ,正單兀20和杈正用控制裝置連接並被控制,而可校 正質里流I控制器1 〇之絕對流量。 其次,說明其步驟。 最初,預先表示求得流量Q之計算步驟。 可根據流入質量dG和經過時間dt之關係求得流量Q, 在質量流量控制器10之校正以在溫度〇t:之絕對流量Q〇 計算。 因此,可根據dG = nQDdt之式子表示。在此,比重n 係物質之固有值。 dG係可根據理想氣體之狀態方程式,從在第一量測和 第二量測之各個時刻所量測的壓力和溫度求得。 即,以PV=nRT表示,根據氣體種類決定此時之氣體常 數R ’以壓力感測器11量測壓力P,以溫度感測与i 2量測 2097-8068-PF;Ahddub 22 1329191 • /m度Τ,體積V係已知。此外,若狀態方程式使用質量g . 而不是莫耳數η,亦能以pv = nRT表示。 ' 因此,使用在第一量測時所量測之壓力P!和溫度Τι, 和在第一里測時所量測之壓力和溫度h,可建立2個式 子,旎以式子表示在該時刻之質量G,在第一量測時為質 量Gl ’在第二量測時為質量G2。 即,以 dG = G2-Gi = (P丨/T丨一P2/t2)(v/R)表示。 根據該式子,藉由代入上述之絕對流量Q。的式子,而 •表示為 Q°=(Pl/Ti~~ P2/T2)CV/I〇/(r()t)。 可是,理想氣體之狀態方程式僅能應用於理想氣體, ^實際之氣體’分子間引力、或分子之大小、及集合狀態 等因各氣體分子而異,需要修正理想氣體之狀態方程式後 使用。 在該t正所使用者係表示實際氣體之非理想的舉動之 係無次元量的壓縮因子Z。 壓縮因子z以Z=pv/RT表示,又,亦表示為z=z(p,τ)。 •即,壓縮因子Z可說是壓力P和溫度τ之函數。 該壓縮因子Z因為係氣體固有的變數,所以如第5圖 所不表不因氣體而異之值。又,因為壓縮因子z是壓力p 和溫度T之函數,所以根據壓力p和溫度τ亦變化。表示 那些關係的係第6圖及第7圖。 第5圖係記載在壓力3〇〇kPa、溫度3〇〇κ條件下之代 表性處理氣體的壓縮因子2之值的表1縮因子%在高愿、 低溫下影響大,實際上,如第5圖所示,得知分子量"愈大 2097-8068-PF;Ahddub 23 1329191 . 者愈偏離ζ=ι之理想氣體的條件。 • 關於H2或He、N2等之分子量小者,接近z=l,尤其是 . 惰性氣體之氮氣,可說和理想氣體大致相同。可是,在nh3 或SF6,其影響大至無法忽略。在SF6,壓縮因子Z為0. 961, 其偏差接近0.04。 第6圖及第7圖係實際上根據氣體表示因溫度和壓力 ' 之變化而壓縮因子Z如何變化的圖,第6圖係表示SFe的 壓縮因子Z之溫度所引起的變化之圖形,第7圖係表示N2 _ 的壓縮因子Z之溫度所引起的變化之圖形。 在各個圖形’以壓縮因子Z表示縱軸,以溫度[。〇 ]表 示橫軸’分別表示在20kPa、50kPa、75kPa、101. 3kPa時 之曲線。 在第6圖所示之SFe的曲線和第7圖所示之N2的曲線, 得知分別一樣地根據溫度壓縮因子Z的值接近1,壓力愈 尚’壓縮因子Z的值愈遠離1,溫度所引起之變化率亦愈 激烈。得知尤其SF6之壓縮因子z受到溫度和壓大的影響 _ 大。 因此,為了利用上述之理想氣體的狀態方程式,需要 如PV = ZnRT般根據壓縮因子Z修正,因而,可算出正確值。 據此,將絕對流量Q。表示為Q[i=(Pi/(Z|Ti) 一 PJ(Z2T2))(V/R)/(r〇1:)。 依以上之方式,可算出質量流量控制器i 〇的流量。 因為在各量測時刻根據所響應之壓縮因子z修正, 即,在第一量測時,為對所量測之壓力Ρι、溫度I的第〆 2097-8068-PF;Ahddub 24 .塵縮因子Z',而在第二量測時’為對所量測之壓力p2、溫 . 度T2的第二壓縮因子Z2,進行適當的修正,所以可得到接 • 近真正之流量的值,即可進行皙,Λ 1 %玎貞s流《控制器10之絕對流 量的校正。 帛8圖表示在質量流量控制器10之絕對流量的校正使 用壓縮因子Ζ之情況和未使用壓縮因子ζ的情況之流量校 • 正的精度。 該流量校正的精度,表示與流量之真值的誤差率,以 φ 精度[%]表示縱軸,以流量[seem]表示橫軸。 如此,得知在質量流量控制器1〇之絕對流量的校正, 和未使用壓縮因子Z之情況相比,在使用壓縮因子z校正 絕對流量之情況,顯然地在其精度出現差異。而且,得知 在使用壓縮因子Z校正絕對流量之情況’接近目標之精度。 可是,實際之氣體聚集單元所具備的質量流量控制器 1〇之流量範圍寬,為2sccm〜200〇sccm。這係由於根據所使 用之氣體種類所需要的氣體之量相異。 籲 可是,如第2圖所示,因為一個校正單元2〇需要進行 多個質量流量控制器1 〇之絕對流量的校正,流量範圍寬時 不方便。 這係由於需要用同一壓力感測器11量測,基準之容積 在量測任一個質量流量控制器丨0的情況都一樣,因為將流 路作為量測用之空間,所以一般容積例如約1 〇 〇CC。 因此,在以2sccm之流量供給氣體的情況,雖然為了 里測所需要之壓力變化而費時,但是在以2〇〇〇SCCffl之流量 2〇97-8〇68-PF;Ahddub 25 1329191 . 供給氣體的情況,壓力如壓力感測器π之表計瞬間擺到底 . 般快速地變化。 . 另-方面’若選定在流量為2SCCm時可高精度地檢測 壓力之壓力感測器11,因為必然地決定其範圍所以在流 量為2SCCm時變成瞬間達該壓力感測器之界限範圍的結 • 果。 • 表示其狀況者係第9圖之圖形和第1〇圖的表。 在第9圖表示壓力和量測時間之關係的圖形。又,在 • 第10圖表示將流體為氮氣之情況的在某容積時之壓力和 量測時間的關係製成表者。 在第9圖,將縱軸設為壓力[kpa]、將橫軸設為量測時 間[sec]’如第9圖所示’壓力和量測時間成正比,量測流 量為2〇SCCm時、50sccni時、1〇〇sccm時之變化相異,得知 流量愈多傾斜愈大。 在第10圖所示之表’得知在量測流量為時, 在0. 7秒達到所需之壓力。 • ®此,為了應付之,需要根據所設定之供給流量的量 切換基準,即,例如,在設定流量為2sccm〜未滿ι〇〇〇_ 為=,以經過時間dt為基準,量_力和溫度,而在設定 流量為100〇sccm〜2000sccm之情況,以壓力為基準量測 溫度和時間。藉由採用這種方法,可保持量測精度。 此外,在第10圖之表中,以粗字所寫的數字係設定 值。例如,氣體流量為10%1時,設為dt=10,量測後其 結果為,·3kpa。而在氣體流量為讓seem時設為 2097-8068-PF;Ahddub 26 丄划191 dP=23kPa,壓力從壓力Pl變成壓力p2為止所花的時間為 1. 3sec 〇 其次,根據這些步驟使用第u圖所示之流程圖說明實 際的量測步驟。 第11圖係表示第〗輯示之迴路的絕對流量之量測步 驟的流程圖。在實際之管線亦根據相同的步驟進行絕對流 量之校正。 選擇流量量測模式時,在S1進行各切斷閥之狀態的設 定。 將第1圖所示之第-切斷閥2卜第三切斷閥23、及第 四切斷閥24全部㈣’將第二切斷閥22設為關閉之狀態, 使氣體流向排氣流路31側。此時’需要預先關閉校正絕對 流量之質量流量控制器1〇以外的第一切斷閥… a即,在連接多條管線的第2圖,例如進行設置於第一 氣體供給路33之質晉、为·Μ « 買1流量控制益1 〇的絕對流量之校正的 ^兄’需要預先關閉第二氣體供給路34及第三氣體供給路 35所具備的第一切斷閥21。 因為一次只能進行一個質量流量控制器1〇之絕對流 量的校正’不預先照這樣做時,無法進行第一氣體供給路 所具備之質篁流量控制器I 〇的絕對流量之校正。此外, 可說在進行其他的質量流量控制器ι〇之絕對流量的校正 之情況亦一樣。 接著在S2 ’使處理氣體以設定流量狀態流 流量之質量流量控制器】 J絕對 …、、後’至賢量流量控制器1 〇 2097-8068-PF;Ahddub 1329191 之流量變成安定為止使處理氣體流向量測絕對流量的質量 抓畺控制器10後,關閉第四切斷閥24,而當作槽之流路 内的壓力增加。 依此方式,第四切斷閥24和第二切斷閥22、及質量 流s控制器10之出口所形成的空間成為容積v之袋小路, 另一方面,因為從質量流量控制器1〇總是流入固定流量的 氣體,所以谷積V之空間内部的積體逐漸上昇。The pressure of the first sealed space and the second sealed vacuum is 2, and the temperature is 2; the third cut room is opened, and the first sealed space and the second sealed space are connected, and the measurement is performed after time. Pressure Ρ3 and temperature τ "the pressure F»2, the temperature T2, the 'determination of the first closed space according to the pressure Pi, the temperature τ, the S force P3, the temperature T3, and the volume 'volume V , and 'do not use the cut-off flow path of the gas-reducing flow path to measure the pressure and temperature, so do not use the special measuring device 5^ set the space efficiency of the measuring circuit, such as the measuring valve, The space in the flow path is treated as a groove, 2097-8068-PF; Ahddub 19 can be used to obtain an unknown transfer hoarding. The volume change of the flow path due to the transformation of the system, etc. θ , ^ The superior effect of the correction of the absolute flow rate of the controller is set. The absolute flow rate of the flow controller is corrected for I, and it is necessary to correctly grasp the volume of the machine thief and the ε within the ε. Calculate the flow direction using the equation of state corrected by the compression factor and the mind Since the flow rate of the controller is not correctly known, the volume cannot be calculated. ^ Therefore, if the volume is determined in this way, the volume can be modified, and the volume in the assembled state can be specified to help shorten the time. Further, the present invention has an excellent effect of the problem of the volume error caused by the assembly after the disassembly. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. First, the structure of the first embodiment will be described. Figure 1 is a flow diagram showing the minimum configuration necessary to correct the absolute flow weight of the flow controller used in the semiconductor process. The mass flow controller 1G of the fluid controller is implemented with the processing gas inside it. The gas flow path 30 to which the inlet of the processing chamber 13 of the semiconductor process is connected is connected. The X' first shutoff valve 21 and the second shutoff valve 22 are provided in a gas that connects the outlet of the mass flow controller 10 and the inlet of the process chamber 13 Further, between the first shut-off valve 21 and the second shut-off valve 22, the connection of the 2097-8068-PF; the Ahddub 20 1329191 and the exhaust gas flow path 3 connected to the vacuum pump 14 1. Further, a third shutoff valve 23 and a fourth shutoff valve 24 are provided in the exhaust flow path μ, and a pressure sensor 11 and a temperature are provided between the third shutoff valve 23 and the fourth cutoff chamber 24. The sensor 12. Further, for convenience of explanation, the third shutoff valve 23, the pressure sensor 11's proximity sensor 12, and the fourth shutoff valve 24 are disposed in the exhaust flow path 31. It is referred to as a correction unit 20. The first shutoff valve 21, the second shutoff valve 22, the third shutoff valve 23, and the fourth shutoff valve 24 are connected to a pneumatic connection unit (not shown). Although the membrane m does not necessarily require a pneumatic operation type, the semiconductor process 'because of the use of a flammable gas as described above', the core system and the explosion-proof specification are preferable, and the air pressure operation type is used. The correction unit 20 is actually mounted in the circuit as shown in Fig. 2. Fig. 2 is a piping diagram showing a part of the actual pipeline. In other words, the plurality of gas lines are the three flow paths of the first gas supply path 33, the first gas supply path 34, and the third gas supply path 35 in the second drawing, and the mass quantity controller 1 is The gas flow path 30 is connected, and the gas flow path 3 之间 between the first shut-off valves 22 for the first cut-off of the first year is connected and the exhaust flow path 31 is provided. Further, in the first gas supply path 33, the second gas supply path 34, and the third gas supply path 35, the pressure gauge 15 or the fifth shutoff valve 28 is removed, and the first flushing is performed. The flushing line 32' to which the second flush valve 26 is connected is used in the case of performing N2 flushing. Further, in addition to the pressure gauge 15 and the pressure regulator 16, the flushing wire 32 is merged via the third flush valve 27 and the gas flow path 30. 21 2097-8068-PF; Ahddub 1329191 In the exhaust flow path 3 I Qiaofan # > „ The third shut-off valve of the second shut-off valve 24, μ 忒 (1) and vacuum 纟The force sense 11 and the temperature sensor 12, the complex & connection and the gas flow path 30 are connected to the processing chamber 13. One of the lines is in the actual use case, and the third figure shows the actual tube gas collecting unit. The structural diagram, Fig. 4 shows the side view thereof. The unitary unit 20 is not disposed in one of the gas gathering units, and is disposed in the mass flow controller 1 of each block. Correction: This βFig. 3 (4) and Fig. 2 correspond to and draw only three gas supply paths, but in the actual gas accumulation unit, more gas supply paths can be connected. And 'these gas supply paths are used as one The unit is housed in a gas box. - In this month, the gas unit is not placed in the structure as shown above, and the positive unit 20 and the crucible are connected and controlled by the control device, and the mass flow I control can be corrected. Absolute flow of 11. Next, explain the steps. Initially, the flow rate Q is determined in advance. The calculation step can determine the flow rate Q according to the relationship between the inflow mass dG and the elapsed time dt, and the correction by the mass flow controller 10 is performed at the absolute flow rate Q〇 of the temperature 〇t: Therefore, according to the formula of dG = nQDdt Here, the specific value of the specific gravity n-type material. The dG system can be obtained from the pressure and temperature measured at each time of the first measurement and the second measurement according to the equation of state of the ideal gas. PV=nRT indicates that the gas constant R′ at this time is determined according to the gas type, and the pressure P is measured by the pressure sensor 11, and the temperature sensing and i 2 measurement is 2097-8068-PF; Ahddub 22 1329191 • /m degree Τ The volume V is known. Furthermore, if the equation of state uses the mass g. instead of the mole number η, it can also be expressed as pv = nRT. ' Therefore, the pressure P! and temperature measured during the first measurement are used. Τι, and the pressure and temperature h measured during the first measurement, two equations can be established, 旎 denotes the mass G at that moment, and the mass G1 in the first measurement is in the second The measurement is the mass G2. That is, it is represented by dG = G2-Gi = (P丨/T丨-P2/t2) (v/R). In the equation, by substituting the above-mentioned absolute flow rate Q, the expression is expressed as Q°=(Pl/Ti~~ P2/T2) CV/I〇/(r()t). However, the ideal gas The equation of state can only be applied to ideal gases. ^The actual gas's intermolecular attraction, or the size of the molecule, and the state of the set are different for each gas molecule. It is necessary to modify the equation of state of the ideal gas and use it. The user is a non-ideal amount of compression factor Z representing the non-ideal behavior of the actual gas. The compression factor z is expressed as Z = pv / RT, and is also expressed as z = z (p, τ). • That is, the compression factor Z can be said to be a function of the pressure P and the temperature τ. Since the compression factor Z is inherently variable in the gas, it does not show a value different from that of the gas as shown in Fig. 5. Also, since the compression factor z is a function of the pressure p and the temperature T, it also varies according to the pressure p and the temperature τ. Figures 6 and 7 show those relationships. Fig. 5 is a graph showing that the reduction factor 2 of the representative processing gas at a pressure of 3 kPa and a temperature of 3 〇〇 κ has a large influence on the high and low temperatures, in fact, as in the first In the figure 5, the molecular weight "the bigger the 2097-8068-PF; the Ahddub 23 1329191. The more the condition of the ideal gas is deviated from ζ=ι. • Regarding the small molecular weight of H2 or He, N2, etc., it is close to z=l, especially the nitrogen of the inert gas, which can be said to be about the same as the ideal gas. However, in nh3 or SF6, the impact is so large that it cannot be ignored. In SF6, the compression factor Z is 0.961, and the deviation is close to 0.04. Fig. 6 and Fig. 7 are diagrams showing how the compression factor Z changes depending on the change of temperature and pressure by gas, and Fig. 6 is a graph showing the change caused by the temperature of the compression factor Z of SFe, the seventh figure. The graph represents a graph of the change caused by the temperature of the compression factor Z of N2 _. In each graph 'the compression axis Z represents the vertical axis at a temperature [. 〇 ] shows that the horizontal axis ′ represents a curve at 20 kPa, 50 kPa, 75 kPa, and 101. 3 kPa, respectively. The curve of SFe shown in Fig. 6 and the curve of N2 shown in Fig. 7 show that the value of compression factor Z is close to 1 according to the temperature, respectively, and the pressure is more than the value of compression factor Z is farther away from 1, the temperature The rate of change caused is also becoming more intense. It is known that especially the compression factor z of SF6 is affected by temperature and pressure _ large. Therefore, in order to utilize the above-described equation of state of the ideal gas, it is necessary to correct the compression factor Z as in PV = ZnRT, and thus, the correct value can be calculated. According to this, the absolute flow rate Q will be used. Expressed as Q[i=(Pi/(Z|Ti) - PJ(Z2T2))(V/R)/(r〇1:). According to the above method, the flow rate of the mass flow controller i 可 can be calculated. Because at each measurement time, according to the compression factor z that is responded to the correction, that is, at the first measurement, it is the measured pressure Ρ, the temperature I of the second 097 2097-8068-PF; Ahddub 24 . dust reduction factor Z', and in the second measurement, the appropriate correction is made for the measured pressure p2 and the second compression factor Z2 of the temperature T2, so that the value of the true flow can be obtained. Perform 皙, Λ 1 % 玎贞 s flow "correction of absolute flow of controller 10. The graph of Fig. 8 shows the accuracy of the flow rate correction in the case where the absolute flow rate of the mass flow controller 10 is corrected using the compression factor Ζ and the case where the compression factor 未 is not used. The accuracy of the flow rate correction indicates the error rate with the true value of the flow rate, the vertical axis is represented by φ precision [%], and the horizontal axis is represented by flow rate [seem]. Thus, it is known that the correction of the absolute flow rate of the mass flow controller 1 显然, in comparison with the case where the compression factor Z is not used, is apparent in the case where the absolute flow rate is corrected using the compression factor z. Moreover, it is known that the accuracy of the target is approached in the case of correcting the absolute flow rate using the compression factor Z. However, the mass flow controller of the actual gas aggregating unit has a wide flow range of 2 sccm to 200 〇 sccm. This is due to the amount of gas required depending on the type of gas used. However, as shown in Fig. 2, since one correction unit 2〇 needs to perform correction of the absolute flow rate of the plurality of mass flow controllers 1 , it is inconvenient when the flow range is wide. This is because the same pressure sensor 11 needs to be measured, and the volume of the reference is the same in measuring any one of the mass flow controllers 丨0, because the flow path is used as a space for measurement, so the general volume is, for example, about 1. 〇〇CC. Therefore, in the case where the gas is supplied at a flow rate of 2 sccm, although it takes time for the pressure change required for the measurement, the flow rate is 2〇97-8〇68-PF at 2〇〇〇SCCff1; Ahddub 25 1329191. In the case, the pressure, such as the pressure sensor π, is instantaneously placed in the end. It changes as fast. On the other hand, if the pressure sensor 11 capable of detecting the pressure with high accuracy at a flow rate of 2 SCCm is selected, since the range is inevitably determined, it becomes a knot which instantaneously reaches the limit range of the pressure sensor when the flow rate is 2 SCCm. • fruit. • The table indicating the status is the figure in Figure 9 and the table in Figure 1. Fig. 9 is a graph showing the relationship between pressure and measurement time. Further, Fig. 10 shows the relationship between the pressure at a certain volume and the measurement time when the fluid is nitrogen. In Fig. 9, the vertical axis is set to the pressure [kpa], and the horizontal axis is set to the measurement time [sec]'. As shown in Fig. 9, the pressure is proportional to the measurement time, and the measured flow rate is 2 〇 SCCm. The change at 50sccni and 1〇〇sccm is different, and the more the flow rate is, the larger the inclination is. In the table shown in Fig. 10, it is found that when the measured flow rate is obtained, the required pressure is reached at 0.7 seconds. • This, in order to cope with it, it is necessary to switch the reference according to the set supply flow rate, that is, for example, when the set flow rate is 2 sccm to less than ι〇〇〇_ is =, based on the elapsed time dt, the amount _ force And temperature, and in the case where the set flow rate is 100 〇sccm to 2000 sccm, the temperature and time are measured on the basis of pressure. By using this method, the measurement accuracy can be maintained. Further, in the table of Fig. 10, the numbers written in bold words are set values. For example, when the gas flow rate is 10%1, it is set to dt=10, and after the measurement, the result is 3kpa. In the case where the gas flow rate is set to 2097-8068-PF for the seek, the Ahddub 26 is 191 dP=23 kPa, and the time taken for the pressure to change from the pressure P1 to the pressure p2 is 1. 3 sec. Next, the second step is used according to these steps. The flow chart shown in the figure illustrates the actual measurement steps. Figure 11 is a flow chart showing the measurement procedure for the absolute flow rate of the circuit of the present invention. The actual flow is also corrected for the absolute flow according to the same procedure. When the flow measurement mode is selected, the state of each shutoff valve is set in S1. The first shut-off valve 2, the third shut-off valve 23, and the fourth shut-off valve 24 shown in Fig. 1 are all (four) 'the second shut-off valve 22 is closed, and the gas flows to the exhaust flow. Road 31 side. At this time, it is necessary to close the first shut-off valve other than the mass flow controller 1校正 for correcting the absolute flow rate. a. That is, in the second diagram in which a plurality of lines are connected, for example, the quality of the first gas supply path 33 is set. It is necessary to close the first shutoff valve 21 provided in the second gas supply path 34 and the third gas supply path 35 in advance. Since the correction of the absolute flow rate of one mass flow controller 1 一次 can be performed at a time, the absolute flow rate of the mass flow controller I 具备 provided in the first gas supply path cannot be corrected without performing this in advance. In addition, it can be said that the same is true for the correction of the absolute flow rate of other mass flow controllers. Then, in S2 'the mass flow controller that makes the process gas flow at the set flow rate state> J absolute..., then 'to the sage flow controller 1 〇2097-8068-PF; Ahddub 1329191 flow becomes stable until the process gas After the flow vector measures the mass of the absolute flow, the fourth shut-off valve 24 is closed, and the pressure in the flow path as the groove is increased. In this manner, the space formed by the fourth shut-off valve 24 and the second shut-off valve 22, and the outlet of the mass flow s controller 10 becomes the pocket path of the volume v, on the other hand, since the mass flow controller 1 It is a gas that flows into a fixed flow rate, so the product inside the space of the valley product V gradually rises.
在S4,確認所設定之壓力感測器丨丨的壓力達到壓力 Pi ’以溫度感測器12量測溫度τ,,並開始量測。 在S5 ’確認壓力感測器〗丨之壓力是否達到設定壓力, 在達到設定壓力之情況(S5: Yes),在S8量測壓力達到係 設定壓力之壓力P2時的經過時間。另一方面,在未達到設 定壓力(S5 : No),而在S6達到檢查之設定時間之情況(s6 : Yes),在S7量測在該時刻之壓力P2和溫度若在s6未 達到設定時間之情況(S6 : No),在S5再進行是否達到設定 壓力之檢查。 即,在此,在先達到設定壓力或設定時間之情況,量 測基準相異。因而’以第10圖而言,若先達到係成為設定 壓力之設定Μ力範圍dP的23kPa和壓力?1之和的值,將 該時刻設為第二量測時,並量測經過時間和溫度1。此時 之壓力ρ2和設定壓力相等。 又,在量測時間dt先達到10sec之情况,將該時刻設 為第二量測時,並量測壓力P2和溫度T2。例如,若質量流 量控制器10之設定流量為50sccm、使用的流體為氣氣, 2097-8068-PF;Ahddub 28 1329191 右依據第ίο圓所示之表,因為量測時間dt係】〇心,量 測壓力Pl後,在1 0秒後量測壓力p2和溫度τ2。 ‘因為此時之設定壓力範圍廿卩為10kpa,所以壓力Ρ2 變成和壓力p1+dp之值相等。 例如,若質量流量控制器10之設定流量為2000sccm、 使用的流體為氮氣,若依據第10圖所示之表,因為設定壓 力範圍DP係23kPa,所以得知壓力上昇23kpa費時〇7秒。 —此外,該判斷亦可作成因應於質量流量控制器ι〇所設 定之設定流量,決定以壓力為基準判斷,或以 基準判斷。以第10圖而一如 第1〇圖而δ ,在設定流量為2Sccm〜未滿 1_咖之情況,以經過時間dt為基準,量測壓力和溫 度,而在設定流量為i OOOSCCIfl〜2〇〇〇sccm之情況,以屢力 為基準,量測溫度和時間。 然後,在S9,從該第一量測睥 里』之壓力P丨、溫度T丨,自 权正用控制器所記憶之壓縮因 丁貝枓3買出第一壓縮因子 L ’從該第二量測時之壓力p /皿度Tz ’自校正用控制 所記憶之壓縮因子資料讀出第二 ° 3L拖|_1于Ζ2。在Sin拍缺 氣體之狀態方程式,按昭如上述路_ Μ止 艮據 筏…、如上述所不的步驟算出絕對流量 y 〇 〇 五 根據以上所示之步驟,可進行0 唞泣香认 > 質買机置控制器1 0之絕 對肌量的校正,根據該值亦可進 正。 丁質罝流置控制器10之校 但,藉由施加電壓之變更進行 法田 •p,雜炒k 質里机篁控制器1 0之校 正,雖然校正後得到適當之流量 I权 仁疋偏離製作質量流量 29 2097-8068-PF;Ahddub 1329191 鬱 , 控制器1 〇之當初的施加電壓和實流量。 • 在經驗上’使用中’室内之氣體濃度偏離設計值,結 . 果,因為使處理之良率惡化,所以預先作成在超過偏離之 界限值的時刻產生某種警報較佳。 其次,亦說明本發明之第2實施例。 (第2實施例) - 在半導體製程所使用之氣體聚集單元,因生產計劃之 變更或產品的變更而被改造之事例不稀奇。 # 可是’在至目前為止之以壓縮因子Ζ修正理想氣體的 狀態方程式並算出絕對流量之第丨實施例,亦因改造而流 路構造變化,或計算所使用之容積ν變更時,無法算出流 量。 因此,著眼於該問題,以第2實施例揭示,在第j實 施例之流路構造,求得因改造而變化之容積V的方法。 第2貫:%例之構造因為和如上述所示之第1實施例相 同’所以省略構造之說明。 在此,為了使說明簡潔,使用第j圖說明。 根據藉由第1圖之第—切斷閥21、第二切斷閥22、及 第一切斷閥23關閉而形成氣體流路3〇及排氣流路31的— 4刀之第一密閉空間的容積Vi,和藉由第三切斷閥23、第 :切斷閥24關閉而形成排氣流路31的一部分之第二密閉 二間的今積V2,求得在第丨實施例之理想氣體的狀態方程 式所使用之谷積V的值。即,y = V|+V2。 但,嚴格而言,因為從質量流量控制器10之出口至第 2097-8068-PF;Ahddub 30 1329191 • 一切斷閥21為止的流路之V3存在,雖然變成v=Vi+Vz+V3, • 但是很接近地設置質量流比量控制器1 0和第一切斷閥 • 21,因為容積L遠小於容積V,、容積Vz,及幾乎無改造該 部分之事例,所以在此說明時將其當作已知。 在因管線之擴張或機器的追加等而流路有變更之情 況,容積V!有變化之可能性。可是,構成容積Vi之部分組 • 裝於構成氣體聚集單元本體的零件,從氣體聚集單元拆下 並量測容積係極困難。 • 另一方面,改造容積V2之可能性極低,應在組裝於氣 體聚集單元之前例如使用膜流量計等之量測機器校正容積 V2後,組裝於氣體聚集單元。即,可將容積總是當作已 知值處理。 因此,在依然組裝之狀態下可量測容積v]較佳。 在第12圖及第則,係在第i圖之構造,以流程圖 表示量測係未知之容積Vl的手段。此外,第12圖及第13 圖根據實質上一樣的手法計算。At S4, it is confirmed that the pressure of the set pressure sensor 达到 reaches the pressure Pi ′ and the temperature τ is measured by the temperature sensor 12, and the measurement is started. At S5 ', check if the pressure sensor 丨 pressure has reached the set pressure, and when the set pressure is reached (S5: Yes), measure the elapsed time when the pressure reaches the pressure P2 of the set pressure at S8. On the other hand, if the set pressure (S5: No) is not reached, and the set time of the inspection is reached at S6 (s6: Yes), the pressure P2 at that time and the temperature are not measured at s6 at S7. In the case (S6: No), it is checked again at S5 whether or not the set pressure is reached. That is, here, the measurement reference is different when the set pressure or the set time is reached first. Therefore, in the case of Fig. 10, if the pressure is set to 23 kPa and the pressure of the set pressure range dP of the set pressure first? The value of the sum of 1 is set to the second measurement time, and the elapsed time and temperature 1 are measured. At this time, the pressure ρ2 is equal to the set pressure. Further, in the case where the measurement time dt reaches 10 sec first, the time is set as the second measurement time, and the pressure P2 and the temperature T2 are measured. For example, if the mass flow controller 10 has a set flow rate of 50 sccm and the fluid used is gas, 2097-8068-PF; Ahddub 28 1329191 is based on the table shown by the circle, because the measurement time dt is 〇, After the pressure P1 is measured, the pressure p2 and the temperature τ2 are measured after 10 seconds. ‘Because the set pressure range at this time is 10kpa, the pressure Ρ2 becomes equal to the value of the pressure p1+dp. For example, if the mass flow controller 10 has a set flow rate of 2000 sccm and the fluid used is nitrogen gas, according to the table shown in Fig. 10, since the set pressure range DP is 23 kPa, it is known that the pressure rise of 23 kpa takes 〇7 seconds. - In addition, the judgment may be made based on the set flow rate set by the mass flow controller ι, determined on the basis of the pressure, or judged on the basis. In the case of Fig. 10, as in Fig. 1 and δ, in the case where the set flow rate is 2 Sccm to less than 1 _ coffee, the pressure and temperature are measured based on the elapsed time dt, and the set flow rate is i OOOSCCIfl~2 In the case of 〇〇〇sccm, measure the temperature and time based on repeated force. Then, at S9, from the pressure P丨 of the first measurement, the temperature T丨, the self-weighting is compressed by the controller to purchase the first compression factor L' from the second compression factor L' from the second The pressure at the time of measurement p / the degree of Tz 'self-correction control the memory of the compression factor data read out the second ° 3L drag |_1 Yu Ζ 2. In Sin, the state equation of the gas is taken, and the absolute flow rate y is calculated according to the above steps, and the absolute flow rate y is calculated according to the above steps, and 0 唞 香 认 & & gt The correction of the absolute muscle mass of the quality controller 10 can be corrected according to this value. But the 丁 罝 罝 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器Production mass flow 29 2097-8068-PF; Ahddub 1329191 Yu, controller 1 〇 the original applied voltage and real flow. • The gas concentration in the 'in use' room is empirically deviated from the design value. As a result, since the yield of the treatment is deteriorated, it is preferable to generate a certain alarm at a timing exceeding the limit value of the deviation. Next, a second embodiment of the present invention will be described. (Second Embodiment) - It is not uncommon for a gas aggregating unit used in a semiconductor process to be modified due to a change in production schedule or a change in product. # However, in the third embodiment of the equation for correcting the ideal gas by the compression factor 并 and calculating the absolute flow rate, the flow path structure is changed by the modification, or the volume ν used for the calculation is changed, the flow cannot be calculated. . Therefore, in view of this problem, in the second embodiment, a method of obtaining the volume V which is changed by the reforming is obtained in the flow path structure of the jth embodiment. The second embodiment: the structure of the % example is the same as that of the first embodiment as described above, and therefore the description of the structure is omitted. Here, in order to simplify the description, the description will be made using the j-th diagram. The first sealing of the gas passage 3〇 and the exhaust passage 31 is formed by closing the shutoff valve 21, the second shutoff valve 22, and the first shutoff valve 23 in the first drawing. The volume Vi of the space and the first shut-off valve 23 and the shut-off valve 24 are closed to form a current product V2 between the second seals of a part of the exhaust flow path 31, and the second embodiment is obtained. The value of the valley product V used by the equation of state for the ideal gas. That is, y = V|+V2. However, strictly speaking, since the outlet of the mass flow controller 10 to the 2097-8068-PF; Ahddub 30 1329191 • the flow path V3 of the shut-off valve 21 exists, although it becomes v=Vi+Vz+V3, • However, the mass flow ratio controller 10 and the first shut-off valve 21 are arranged very close, because the volume L is much smaller than the volume V, the volume Vz, and there is almost no case of modifying the portion, so when it is explained here As known. In the case where the flow path is changed due to the expansion of the pipeline or the addition of the machine, the volume V! may vary. However, the part constituting the volume Vi is mounted on the body constituting the gas concentrating unit, and it is extremely difficult to remove the gas collecting unit and measure the volume. • On the other hand, the possibility of rebuilding the volume V2 is extremely low and should be assembled to the gas accumulation unit after being assembled in the gas accumulation unit, for example, using a measuring machine such as a membrane flowmeter to correct the volume V2. That is, the volume can always be treated as a known value. Therefore, it is preferable to measure the volume v] while still being assembled. In Fig. 12 and the figure, in the configuration of Fig. i, a means for measuring the volume V1 of the unknown system is shown by a flowchart. In addition, the 12th and 13th figures are calculated according to substantially the same method.
首先從第12圖說明。 選擇容積量測模式時,在S11,設定各切斷閥之狀態。 設為將第1圖所示之第一切斷Μ 2卜第三切斷閥23 '及第 :切斷閥24全部打開、將第二切斷間22關閉之狀態,使 氣體流向排氣流路31側。 此時,需要預先關閉成為容積量測對象之質量流量控 制器10以外的第_切斷冑21。即,在連接多條管線的第2 圖’例如使用設置於第-氣體供給路33之質量流量控制器 31 2097-8068-PF;Ahddub 1329191 m 1。進行容積量測的情況’需要預先關閉第二氣體供给 及第三氣體供給路35所具備的第一切斷閥2卜因為無法 同時使用2個以上之質量流量控制器1〇進行容積量剛:不 預先照這樣做時’無法使用第一氣體供給路⑴斤具備之 量流量控制器1 0進行容積量測。 此外,可說在使用其他的質量流量控制器10進行容積 量測之情況亦一樣。 + 但’只要進行容積量測一*,因為可高精度地求得容 積,雖然使用其他的質量流量控制器10進行容積量夠這件 事僅具有確認性意義,但是具有可進行更確實之容積量測 的可能性。 ^ 接著在S1 2 ’在質量流量控制器1 〇之設定流量狀熊, 使氮氣流動。此情況和第!實施例相異,因為流路之容積 V!係未知’所以需要使用接近理想氣體之氣體量測。 通過質量流量控制器10之氮氣的供給流量變成安定 後’在S13關閉第四切斷閥2 4。 依此方式,利用第二切斷閥22及第四切斷閥24關閉 流路’因為成為袋小路,由質量流量控制器1 〇之出口、第 二切斷閥22、及第四切斷閥24所形成的空間之壓力開始 上昇。流路内之壓力達到壓力Pl後,在S14,關閉第—切 斷閥21,因而,產生容積+容積V2之密閉空間。接著在 S15 ’量測壓力P,和溫度τ,。 量測完了後,在S16關閉第三切斷閥23,並打開第四 切斷閥24 »因而,容積v,之第一密閉空間處於原來的壓力 2097-8068-PF;Ahddub 32 1329191 狀態,而打開容積V2之第二密閉空間。 :後在S17利用真空栗2 4抽真空後,再關閉第四 切斷閥24。在半導體製程所使用之真空栗14,因為安裝如 輪機分子泵或乾式泵之產生高度真空者的事例多,所以可 產生大致真空狀態’藉由在該時刻關閉第四切斷閥24,而 容積V2之第二密閉空間可保持真空度高的狀態。 在S18 s測此狀態之壓力pz和溫度了2。 然後’在S19打開第三切_ 23,而使第一密閉空間 和第二密閉空間連通,並量測壓力Η和溫度L。 依以上之方式,得到係未知之容積L的第一密閉空間 之壓力為壓力Pl、溫度為溫度?1之狀態;係已知之容=^ 的第一拯閉空間之壓力為壓力Pa、溫度為溫度T2之狀態· 及在將第一密閉空間和第二密閉空間連通之狀態的空間之 容積為容積V1 +容積V2,壓力為壓力Η、溫度為溫度I之 狀態。 在S20 ’根據這些狀態利用理想氣體之狀態方程式, 求得係未知的容積V!。依以上之方式,可得知改造後之第 一密閉空間的容積V!。 此外,在該理想氣體之狀態方程式的計算步驟如以下 所示。 以式子表示上述之狀態時,PluRTi、P2V2 = n2RT2、 PiCVi + Vz^naRTs之 3 個式子。 在此’ R係氣體常數,係莫耳數。此外,若空間之 密閉度高,莫耳數應不變,可說ηι+η2=η3。 2097*8〇68-PF;Ahddub 33 Γ329191 m 整理上述之式子,根據莫耳數之 V丨=(τ丨(ρ2τ3 - p3T3))/(T2(p3T丨— 因此,對氣體常數R 關係表示時,表示$ ρα))^。 因為上式之右項全部已知 所以可利用計算求得容積 其次,說明第13圏。 選擇容積量測模式時’在S21,設定各切斷閥能。 設為將第1圖所示之第-切斷閥21、第三切斷間:3、 及第四切斷閥24全部打門收域 P打開、將第二切斷閥22關閉之狀離, 使氣體流向排氣流路31側。 一 此時,需要預先關閉成為容積量測對象之質量流量控 制器ίο以外的第-切斷間2卜其理由和第12圖之情況: 同。 接者在S22’在質量流量控制器】。之設定流量狀態, 使氮氣流動。此情況和帛!實施例相異,因為流路之容積 V,係未知,所以需要使用接近理想氣體之氣體量測。 通過質量流量控制器10之氮氣的供給流量變成安定 後,在S23關閉第四切斷閥24。依此方式,利用第二切斷 閥22及第四切斷閥24關閉流路,因為成為袋小路,由質 量流量控制器10 4出口、第二切斷閥22、及第四切斷閥 24所形成的空間之壓力開始上昇。 流路内之壓力達到壓力h後’在S24,關閉第三切斷 閥23 ’因而’產生容積Vz之第二密閉空間。接著在S15, 量測壓力P,和溫度T!。 2097-8068-PF;Ahddub 1329191 • 里、】元了後,在S26關閉第一切斷閥21,並打開第_ -七刀斷閥22。因而,以原來的壓力狀態保持容積V2之第 閉空間。 然後,在S27,將處理室13抽真空後,再關閉第二切 斷閥22。 在半導體製程所具備之處理室13,具備產生高度真空 的真空泵等之情況多,和第12圖一樣可產生大致真空狀 態’藉由在該時刻關閉第二切斷閥22,而容積Vi之第一密 φ 閉空間可保持真空度高的狀態。 、 接著’在S28打開第三切斷閥23,而使第一密閉空間 和第一密閉空間連通’並量測壓力和溫度T2。 依以上之方式,得到係已知之容積V2的第二密閉空間 之壓力為壓力Ρ!、溫度為溫度Τι之狀態;及在將係未知之 容積V!的第一密閉空間和容積V2之第二密閉空間連通的狀 態之壓力為壓力P2、溫度為溫度T2之狀態。 在S20 ’根據這些狀態利用理想氣體之狀態方程式, _ 求得係未知的容積Vm依以上之方式,可得知改造後之第 一密閉空間的容積V!。 此外,在該理想氣體之狀態方程式的計算步驟如以下 所示。 以式子表示上述之狀態時,pjpmRTi、P2(Vi + V〇 = ri2RT2 之2個式子。 在此,R係氣體常數,Πχ係莫耳數。此外,若空間之 密閉度高’莫耳數應不變,而且,因為以高位準實現真空 2097-8068-PF;Ahddub 35 對氣體常數R整理上述之式子 果耳數之 關及士 ,“此,工丄叭卞,;f 關係表示時,表千炎ir '、為 V1 = (plTl— p2T2)/(p2T2)V2 因為上式之右項First, it is explained from Fig. 12. When the volume measurement mode is selected, the state of each shutoff valve is set in S11. It is assumed that all of the first shutoff valve 2 and the third shutoff valve 23' shown in Fig. 1 are opened, and the second shutoff chamber 22 is closed, so that the gas flows to the exhaust flow. Road 31 side. At this time, it is necessary to close the first cut-off 胄 21 other than the mass flow controller 10 to be the volume measurement target. That is, in the second drawing ‘connecting a plurality of lines, for example, the mass flow controller 31 2097-8068-PF; Ahddub 1329191 m 1 provided to the first gas supply path 33 is used. In the case of performing the volume measurement, it is necessary to close the second gas supply and the first shutoff valve 2 included in the third gas supply path 35 in advance, since it is not possible to simultaneously use two or more mass flow controllers 1 to perform the volumetric quantity: When the above is not performed in advance, the volume measurement can be performed using the flow rate controller 10 provided by the first gas supply path (1). In addition, it can be said that the same is true for volume measurement using other mass flow controllers 10. + But 'as long as volume measurement is performed*, since the volume can be obtained with high precision, although it is only confirmable to use other mass flow controllers 10 for volumetric capacity, it has a more reliable volume. The possibility of measurement. ^ Then set the flow-like bear at S1 2 ' in the mass flow controller 1 to make the nitrogen flow. This situation and the first! The embodiment is different because the volume V! of the flow path is unknown, so it is necessary to use a gas measurement close to the ideal gas. After the supply flow rate of the nitrogen gas passing through the mass flow controller 10 becomes stable, the fourth shutoff valve 24 is closed at S13. In this manner, the flow path ' is closed by the second shutoff valve 22 and the fourth shutoff valve 24, because the bag is small, the outlet of the mass flow controller 1 is closed, the second shutoff valve 22, and the fourth shutoff valve 24 are provided. The pressure of the space formed begins to rise. After the pressure in the flow path reaches the pressure P1, the first-cutting valve 21 is closed at S14, and thus a sealed space of volume + volume V2 is generated. The pressure P, and the temperature τ, are then measured at S15'. After the measurement is completed, the third shut-off valve 23 is closed at S16, and the fourth shut-off valve 24 is opened. Thus, the volume v, the first closed space is at the original pressure of 2097-8068-PF; Ahddub 32 1329191 state, and The second closed space of the volume V2 is opened. After that, after vacuuming the vacuum pump 24 at S17, the fourth shutoff valve 24 is closed. In the vacuum pump 14 used in the semiconductor manufacturing process, since there are many cases in which a high-vacuum is generated, such as a turbine molecular pump or a dry pump, a substantially vacuum state can be generated. By closing the fourth shut-off valve 24 at that time, the volume is closed. The second closed space of V2 can maintain a state of high vacuum. The pressure pz and the temperature of this state were measured at S18 s. Then, the third cut _ 23 is opened at S19, and the first closed space and the second closed space are communicated, and the pressure enthalpy and the temperature L are measured. According to the above method, the pressure of the first sealed space of the volume L which is unknown is the pressure P1 and the temperature is the temperature. The state of 1 is the state in which the pressure of the first living space of the known capacity = ^ is the pressure Pa, the temperature is the temperature T2, and the volume of the space in the state where the first closed space and the second closed space are connected is the volume V1 + volume V2, the pressure is the pressure Η, and the temperature is the state of temperature I. At S20', the state equation of the ideal gas is used according to these states, and the volume V! which is unknown is obtained. According to the above method, the volume V! of the first sealed space after the modification can be known. Further, the calculation steps of the equation of state of the ideal gas are as follows. When the above state is expressed by the equation, PluRTi, P2V2 = n2RT2, PiCVi + Vz^naRTs are three expressions. Here, the R-based gas constant is the number of moles. In addition, if the degree of airtightness is high, the number of moles should be constant, and ηι+η2=η3 can be said. 2097*8〇68-PF; Ahddub 33 Γ329191 m Finish the above formula, according to the number of moles V丨=(τ丨(ρ2τ3 - p3T3))/(T2(p3T丨—so, the relationship of the gas constant R When, it means $ ρα))^. Since the right term of the above formula is all known, the volume can be calculated by calculation. Next, explain the 13th. When the volume measurement mode is selected' At S21, each shutoff valve can be set. It is assumed that the first shut-off valve 21, the third shut-off chamber 3, and the fourth shut-off valve 24 shown in Fig. 1 are opened and the second shut-off valve 22 is closed. The gas is caused to flow toward the exhaust flow path 31 side. At this time, it is necessary to close the first-cutting room 2 other than the mass flow controller which is the volume measuring object, and the reason of the 12th figure: The receiver is at S22' in the mass flow controller. Set the flow state to allow nitrogen to flow. This situation is awkward! The embodiment is different because the volume V of the flow path is unknown, so it is necessary to use a gas measurement close to the ideal gas. After the supply flow rate of the nitrogen gas passing through the mass flow controller 10 becomes stable, the fourth shutoff valve 24 is closed at S23. In this manner, the flow path is closed by the second shutoff valve 22 and the fourth shutoff valve 24, and the mass flow controller 104 outlet, the second shutoff valve 22, and the fourth shutoff valve 24 are closed as the pocket path. The pressure of the space formed began to rise. After the pressure in the flow path reaches the pressure h, 'at S24, the third shut-off valve 23' is closed and thus the second closed space of the volume Vz is generated. Next at S15, the pressure P, and the temperature T! are measured. 2097-8068-PF; Ahddub 1329191 • After the middle, the first shut-off valve 21 is closed at S26, and the _-seven-segment shut-off valve 22 is opened. Therefore, the first closed space of the volume V2 is maintained in the original pressure state. Then, at step S27, after the process chamber 13 is evacuated, the second shutoff valve 22 is closed. The processing chamber 13 provided in the semiconductor process is often provided with a vacuum pump or the like that generates a high vacuum, and can generate a substantially vacuum state as in Fig. 12. By closing the second shutoff valve 22 at this time, the volume Vi is A dense φ closed space maintains a high degree of vacuum. Then, the third shutoff valve 23 is opened at S28, and the first sealed space is communicated with the first closed space', and the pressure and temperature T2 are measured. According to the above manner, the pressure of the second closed space of the known volume V2 is obtained as the pressure Ρ!, the temperature is the state of the temperature ;ι; and the first closed space and the second volume V2 of the volume V! which is unknown The pressure in the state in which the closed space is connected is the state of the pressure P2 and the temperature of the temperature T2. According to the state equation of the ideal gas based on these states, the volume Vm of the first closed space after the modification can be known by the above-described equation of the volume Vm which is unknown. Further, the calculation steps of the equation of state of the ideal gas are as follows. When the above state is expressed by the equation, pjpmRTi and P2 (Vi + V〇 = ri2RT2 are two equations. Here, the R-based gas constant is the number of moles in the system. In addition, if the space is highly sealed, the molar is The number should be the same, and, because the vacuum is 20097-8068-PF at a high level; Ahddub 35 sorts the gas constant R to the above-mentioned number of ears and the number of ears, "this, the work, the relationship of f; When the table is inflammatory, ir ', is V1 = (plTl - p2T2) / (p2T2) V2 because the right term of the above formula
Vi。 唄王。p已知,所以可利用計算求得容積 這種第12圖及楚1Qtsl _ 第13圖所示之2種步驟,實質卜总* 相同的想法上成立的h I買上係在Vi. Yu Wang. p is known, so the volume can be calculated by calculation. The 12th figure and the 1st step shown in Fig. 13 are shown in Fig. 12, and the main idea is the same.
鬼^ 的方法,係將氮氣充滿第一密閉空n B 第二密閉空間,並量」… 及第二密閉空間抽 】二間 τ . 具工並罝測抽真空後之壓力Ρ2、、、田译 2 ’打開第三切斷閥, ⑽- 連通,Α在閉工間及第一畨閉空間 連通在時間後量測壓力?3和溫度I根The method of ghost ^ is to fill the first closed space n B second confined space with nitrogen gas, and the amount "... and the second confined space pumping] two τ. Work and speculate the pressure after vacuuming Ρ 2,,, Tian Translated 2 'Open the third shut-off valve, (10) - Connect, Α in the closed room and the first closed space connected to measure the pressure after the time? 3 and temperature I root
Tl、壓力ρ2、沪痒T r. 】/皿展 容 又2堊力P3、溫度T3、及容積v2,算出 今積V丨之具體的手段。 异® 但’根據使用者之努署 ^ 因為考慮氣體流路30所呈備 SI1:具備之真空產生—能不高,而無法產: 直:排氣流路31未連接具有產生高度真空之性 ::…4之情況’所以提議上述之2種方法。 右依據該方法,若利用飧畑〜, 右扪用處理室13或真空泵14之盆中 之一可產生真空,可算出交接v '、 异出谷積V丨,在真空泵14側之真空 不尚的情況,若係第12圖之 容積^優點。 《具有亦可^誤差小的 又,藉由如此提供在半導 造後所產生之未知容積的求得 造後亦可以第1實施例之方法 體製程之氣體聚集單元的改 方法,而係氣體聚集單元改 進行質量流量控制器丨〇之絕 2097-8068-PF;Ahddub 36 1329191 對流量的校正。 右依據以上所說明之本發明的質量流 流量的校正系統,可得到如以下所示之作用、Γ果 ⑴-種質量流量控制器之絕對流量的校正系统,校正 在具有設置於將係流量控制 及笛-艰的乳體⑽路30之第-切斷閥21 一 的流4控制單元之質量流量控制器10的 絕對流量,具有··排氣流路31,將第一切斷閥2】及二的 切斷間Μ之間的氣體流路30和真空系"之入口連通第; 二切斷閥23與第四切斷閥24,設置於排氣流路μ;壓力 感測器11和溫度感測器12,設置於第三切斷閥23和第四 切斷間24之間的排氣流路31;以及校正用控制裝置,連 ㈣力感測器li和溫度感測器12’記憶氣體種類固有之 麼縮因子資料、及由質量流量控制器1。的出口、第二切斷 閥I及第四切斷閥24所形成之既定的空間之容積值; 從校正用控制裝置之壓縮因子資料讀出在第一量測時與壓 力感測器11之壓力Pl及溫度感測器12的溫度T,對應之第 :壓縮因+ z,,並從壓力Pl、溫度Τι、容積v、及第一壓 縮因子2>求得質量Gl;從校正用控制裝置之壓縮因子資料 ,出在第二量測時與壓力感測器U之壓力&及溫度感測 器丨2的溫度Tz對應之第二壓縮因子Zz,並從壓力p2、溫 度Tz谷積V、及第二壓縮因子Ζ2求得質量g2;根據質量 Gl和質I G2之差,可校正質量流量控制器1〇的絕對流量。 因而,不是如接近理想氣體之氮氣的量測用氣體,而 2097-8068 ~PF;Ahddub 37 1329191 、 使用實際上流向質量流量控制器10.之氣體種類的處理氣 體,可進行質量流量控制器10之絕對流量的校正,因為利 用和在各時刻之壓力值和溫度值各個對應的壓縮因子Z修 正理想氣體之狀態方程式並算出,所以得到精度高之絕對 流量,因而具有可進行質量流量控制器10之絕對流量的校 正之優異的效果。Tl, pressure ρ2, Shanghai itch T r. 】 / dish display capacity 2 垩 force P3, temperature T3, and volume v2, calculate the specific means of the current product V 丨. Different ® but 'according to the user's action ^ Because the gas flow path 30 is considered to be SI1: the vacuum generated is not high, and cannot be produced: straight: the exhaust flow path 31 is not connected and has a high degree of vacuum The case of ::...4, so the above two methods are proposed. According to this method, if one of the basins of the treatment chamber 13 or the vacuum pump 14 is used, the vacuum can be generated by using the 飧畑~, and the transfer v' and the heterogeneous valley product V丨 can be calculated, and the vacuum on the vacuum pump 14 side is not good. In the case, if it is the volume of Figure 12, the advantage. The gas accumulation unit of the method of the first embodiment can be modified by the method of providing the unknown volume generated after the semi-conducting, and the gas can be modified. The aggregation unit is changed to the mass flow controller 2 2 2097-8068-PF; Ahddub 36 1329191 correction of the flow. According to the mass flow rate correction system of the present invention described above, a correction system for the absolute flow rate of the effect (1)-type mass flow controller as shown below can be obtained, and the correction has the flow control set in the system. And the flute-difficult milk (10) road 30 - the shut-off valve 21 - the flow rate 4 control unit mass flow controller 10 absolute flow rate, with · exhaust flow path 31, the first shut-off valve 2] And the inlet and outlet of the gas flow path 30 and the vacuum system between the two cutting chambers; the second shutoff valve 23 and the fourth shutoff valve 24 are disposed in the exhaust flow path μ; the pressure sensor 11 And a temperature sensor 12, an exhaust flow path 31 disposed between the third shutoff valve 23 and the fourth shutoff chamber 24; and a correction control device, the (four) force sensor li and the temperature sensor 12 'The memory gas type inherently shrinks the factor data, and the mass flow controller 1. The volume value of the predetermined space formed by the outlet, the second shutoff valve I, and the fourth shutoff valve 24; the readout from the compression factor data of the calibration control device at the first measurement time and the pressure sensor 11 The pressure P1 and the temperature T of the temperature sensor 12 correspond to the first: compression factor + z, and the mass G1 is obtained from the pressure P1, the temperature 、, the volume v, and the first compression factor 2 >; the control device for correction The compression factor data, the second compression factor Zz corresponding to the pressure of the pressure sensor U and the temperature Tz of the temperature sensor 丨2 in the second measurement, and the valley product V from the pressure p2 and the temperature Tz And the second compression factor Ζ2 obtains the mass g2; according to the difference between the mass G1 and the mass I G2, the absolute flow rate of the mass flow controller 1 可 can be corrected. Therefore, instead of measuring gas such as nitrogen close to the ideal gas, and 2097-8068 ~ PF; Ahddub 37 1329191, the mass flow controller 10 can be performed using the processing gas of the gas type actually flowing to the mass flow controller 10. The correction of the absolute flow rate is performed by correcting the state equation of the ideal gas by the compression factor Z corresponding to each of the pressure value and the temperature value at each time, so that an absolute flow rate with high accuracy is obtained, and thus the mass flow controller 10 can be performed. The excellent effect of the correction of the absolute flow rate.
在使用理想氣體之狀態方程式算出絕對流量的情況, 因為和實際氣體的絕對流量發生偏差,所以為了修正實際 氣體之非理想的舉動,雖然添加修正係數,但是因為顯示 非理想之舉動的壓縮因子係壓力和溫度之函數,其值根據 在該量測時刻之壓力和溫度而變。 因此’若僅添加修正係數,在根據密閉空間内之壓力 下降或壓力上昇算出絕對流量的情況,在壓力低之情況和 壓力變高的情況應修正之壓縮因子z的值相異,雖然在所 算出之絕對流量的值發生偏差,但是藉由在第一量測時和 第二量測時使用和各自之壓力和溫度對應的第一壓縮因子 2〗和第二壓縮因子I,可算出在各量測時之適當的絕對流 〇 曰而且,因為如此使用實際氣體可求得精度佳之絕對流 罝,所以如使用量測用氣體校正之情況般和實際的使用狀 態無相異,可根據絕對流量校正,因為藉此校正,所以可 掌握供給半導體機器之氣體的絕對流量。 (2 )在(1)所記載的流量控制器之絕對流量的校正系 統’因為其特徵在於:該流量控制器係使預先決定之固定 38 2097-8068-PF;Ahddub # Λ丨L里流動者;在量測時,根據 』町很媒通過質量流量控制器10之流 體的固定流量切換第一方式和 _ 弟一方式’而該第一方式係 以經過時間為基準決定該第— θ ’、 夏利時和該第一 1測時,而 第二方式係以既定壓力為基準決定該第一量測時和該第二 量測時;所以具有可進行合乎通過質量流量控制器10之氣 體的流量之高精度的校正之優異的效果。 μ向係軋體聚集單元具有之流量控制器的例如質量流 量控制器1〇之處理氣體的流量,在通過質量流量控制器When the absolute flow rate is calculated using the equation of state of the ideal gas, the absolute flow rate of the actual gas is deviated. Therefore, in order to correct the non-ideal behavior of the actual gas, the correction factor is added, but the compression factor system showing the non-ideal behavior is shown. A function of pressure and temperature, the value of which varies depending on the pressure and temperature at the moment of measurement. Therefore, if only the correction factor is added, the absolute flow rate is calculated based on the pressure drop or the pressure rise in the closed space. The value of the compression factor z to be corrected is different between the case where the pressure is low and the case where the pressure is high. The calculated value of the absolute flow rate is deviated, but by using the first compression factor 2 and the second compression factor I corresponding to the respective pressures and temperatures during the first measurement and the second measurement, Appropriate absolute flow in the measurement, and because the actual gas can be used to obtain the absolute flow with good precision, if the gas calibration using the measurement is not different from the actual use state, it can be corrected according to the absolute flow rate. Because of this correction, the absolute flow rate of the gas supplied to the semiconductor device can be grasped. (2) The correction system for the absolute flow rate of the flow controller described in (1) is characterized in that the flow controller is fixed in a predetermined 38 2097-8068-PF; the flow in Ahddub # Λ丨L In the measurement, the first mode and the first mode are switched according to the fixed flow rate of the fluid of the mass flow controller 10 according to the "the town", and the first mode determines the first - θ ' based on the elapsed time. The Charley time and the first 1 time measurement, and the second mode determines the first measurement time and the second measurement time based on the predetermined pressure; therefore, there is a flow rate that can pass the gas passing through the mass flow controller 10 The excellent effect of high precision correction. The flow rate of the process gas, such as the mass flow controller 1 of the flow controller of the flow controller of the μ-direction rolling body, is passed through the mass flow controller
10之流量具有2CC〜2000CC之範圍,在進行質量流量控制 器1〇之絕對流量的校正之情況,亦需要以和使用狀態相同 之設定流量校正。 可是’壓力和時間具有正比關係、,雖然在流量少之情 因:壓力很難上昇’所以要看到變化需要花時間,但 是在流量多之情況,壓力在短時間内變化。 在此情況,由於機器之響應性的問題,在太短的時間 内壓力上昇之情況,以經過時間為基準量測壓力時,具有 精度惡化的可能性…因為係在接近最大範圍之部:的 量測,所以根據響應精度,亦具有超出壓力感測器u之量 測範圍的可能性。 因此,藉由在流量少之情況以經過時間為基準,而在 流量多的情況以既定壓力為基準量測,並校正絕對流量, 而可實現高精度之流量校正。 (3)—種流量控制器之絕對流量的校正系統,校正在具 有設置於將質量流量控制器之出口和處理室13的入口 2097-8068-PF/Ahddub 39 1329191 連通的氣體流路30之第一切斷閥21及第二切斷閥22的流 量控制單元之質量流量控制器1 〇的絕對流量,因為其特徵 在於:具有:排氣流路31’將第一切斷閥21及第二切斷 閥22之間的氣體流路30和真空泵14之入口連通;第三切The flow rate of 10 has a range of 2 CC to 2000 CC. In the case of correcting the absolute flow rate of the mass flow controller 1 ,, it is also necessary to set the flow rate correction in the same state as the use state. However, 'pressure and time have a proportional relationship, although the flow is low because the pressure is difficult to rise', so it takes time to see the change, but in the case of a large flow, the pressure changes in a short time. In this case, due to the responsiveness of the machine, when the pressure rises in a too short period of time, when the pressure is measured based on the elapsed time, there is a possibility that the accuracy is deteriorated... because it is close to the maximum range: Measurement, so depending on the accuracy of the response, there is also the possibility of exceeding the measurement range of the pressure sensor u. Therefore, high-precision flow rate correction can be realized by measuring the time based on the elapsed time with a small flow rate and measuring the absolute flow rate based on a predetermined flow rate. (3) A correction system for the absolute flow rate of the flow controller, correcting the gas flow path 30 having the inlet 209.7-8068-PF/Ahddub 39 1329191 connected to the outlet of the mass flow controller and the processing chamber 13 The absolute flow rate of the mass flow controller 1 流量 of the flow control unit of the shut-off valve 21 and the second shut-off valve 22 is characterized in that it has: the exhaust flow path 31' will be the first shut-off valve 21 and the second The gas flow path 30 between the shut-off valves 22 communicates with the inlet of the vacuum pump 14; the third cut
斷閥23與第四切斷閥24,設置於排氣流路31 ;壓力感測 器11和溫度感測器12,設置於第三切斷閥2 3和第四切斷 閥24之間的排氣流路31 ;以及校正用控制裝置,連接壓 力感測器11和溫度感測器12 ;具有:第一密閉空間,藉 由第一切斷閥21、第二切斷閥22、及第三切斷閥23關閉 而形成;及第二密閉空間,藉由第三切斷閥23及第四切斷 閥24關閉而形成,以第三切斷閥23和第一密閉空間所隔 開之容積V 2係已知;將氣體充滿第一密閉空間及第二密閉 空間,並量測壓力p,、溫度T1 ;將第一密閉空間及第二密 閉空間抽真空,並量測抽真空後之壓力P2、溫度T2;打開 第三切斷閥23,而將第一密閉空間及第二密閉空間連通, 在時間後量測壓力Ps和溫度τ“根據壓力Ρι、溫度Τι、壓 力P2、溫度τ2、壓力Pa、溫度η、及容積V2’求得第一密 閉空間之容積Vl ;所^使用特殊之量測機器,且不使用 如降低氣體聚集迴路之空間效率的量測用槽等,開閉流路 所具備之切斷閥 —^ β ·「ΊΒ ,裙田重測魘 力和溫度,^求得未知之容積,具㈣因改造等而流路 的體積變化之情況,亦可推彡 況亦了進灯流1控制器之絕對流量的校 正之優異的效果。 需要正確地 為了校正質量流量控制器10之絕對流量 2097-8068-PF;Ahddub 40 掌握機器及配管内部的容積。 這係由於使用理想氣想之狀態 量控制器】0之流量,所以去τ + 卞异^向質量流 緣故。 心未正確地知道容積時無法計算的 因此,若有如此求得容積之方法 定在組裝狀態的容積,…了女Λ 仃改xe,亦可特 具有無分解後Μ時所產生卜=且亦 果。 狀、左耵问喊之優異的效 【圖式簡單說明】 第1圖係表示本發明之第1實施例的用以校正流量控 制器之絕對流量的必需之最小構造的流路構造圖。 圖系表示本發明之第1實施例的應用於實際管線 之情況的部分之配管圖。 第3圖係表不本發明之第1實施例的氣體聚集單元之 構造圖例。 第4圖係表示本發明之第1實施例的第3圖所示之氣 體聚集單元的側視圖。 第5圖係表示在300kPa、300Κ之環境下的各物質之壓 縮因子Z的值之表。 第6圖係表示係在本發明之第1實施例的氣體聚集單 70流動之處理氡體例的SF6之壓縮因子Z受到溫度和壓力 之影響的圖形。 第7圖係表示係在本發明之第1實施例的氣體聚集單 2097-8068-PF;Ahddub 41 •-流動之冲洗用氣體的之N2之壓縮因子Z受到溫度和壓力 * 之影響的圖形。The shutoff valve 23 and the fourth shutoff valve 24 are disposed in the exhaust flow path 31; the pressure sensor 11 and the temperature sensor 12 are disposed between the third shutoff valve 23 and the fourth shutoff valve 24 The exhaust flow path 31; and the correction control device are connected to the pressure sensor 11 and the temperature sensor 12; and have a first sealed space by the first shutoff valve 21, the second shutoff valve 22, and the The third shutoff valve 23 is closed; and the second closed space is formed by closing the third shutoff valve 23 and the fourth shutoff valve 24, and is separated by the third shutoff valve 23 and the first sealed space. The volume V 2 is known; the gas is filled in the first sealed space and the second closed space, and the pressure p, the temperature T1 is measured; the first sealed space and the second sealed space are evacuated, and the vacuum is measured. Pressure P2, temperature T2; opening the third shut-off valve 23, and connecting the first closed space and the second closed space, measuring the pressure Ps and the temperature τ after the time "according to the pressure 、, temperature 、, pressure P2, temperature τ2 , the pressure Pa, the temperature η, and the volume V2' to obtain the volume Vl of the first closed space; the special measuring machine is used, and Use a measuring valve such as a measuring tank that reduces the space efficiency of the gas gathering circuit, etc., and a shut-off valve provided in the opening and closing flow path - ^ β · "ΊΒ, the field is re-measured with force and temperature, and the volume is unknown. (4) The volume change of the flow path due to the modification, etc., can also be promoted to the excellent effect of correcting the absolute flow rate of the controller of the lamp flow 1. It is necessary to correctly correct the absolute flow rate of the mass flow controller 10 2097- 8068-PF; Ahddub 40 Master the volume inside the machine and piping. This is because the flow rate of the ideal state quantity controller is 0, so the τ + 卞 ^ 向 质量 质量 质量 。 。 。 。 。 。 。 。 。 Can not be calculated, therefore, if there is such a way to determine the volume of the volume in the assembled state, ... Λ Λ x x x x , , , , , , , , x x x x x x x x x x x x x x x x x x x x x x x x x (Simplified description of the drawings) Fig. 1 is a flow chart showing the minimum structure necessary for correcting the absolute flow rate of the flow controller according to the first embodiment of the present invention. First embodiment Fig. 3 is a view showing a configuration of a gas collecting unit according to a first embodiment of the present invention. Fig. 4 is a view showing a third embodiment of the first embodiment of the present invention. A side view of the gas aggregating unit shown in Fig. 5. Fig. 5 is a table showing the values of the compression factor Z of each substance in an environment of 300 kPa and 300 Torr. Fig. 6 is a view showing the gas of the first embodiment of the present invention. The compression factor Z of the SF6 of the processing unit 100 is subjected to the influence of temperature and pressure. Fig. 7 shows the gas accumulation sheet 2097-8068-PF of the first embodiment of the present invention; Ahddub 41 • - The compression factor Z of N2 of the flowing flushing gas is affected by the temperature and pressure*.
第8圖係表不本發明之第1實施例的使用壓縮因子Z 校正絕對流里之情況和未使用壓縮因子Z校正絕對流量的 情況之精度例的圖形。 第9圖係表不本發明之第1實施例的壓力和量測時間 ' 之關係的圖形》 第1 〇圖係將本發明之第1實施例的流體為氮氣之情況 鲁的在某容積時之壓力和量測時間的關係製成表者。 第1 1圖係表示本發明之第1實施例的第1圖所示之迴 路的絕對流量之校正步驟的流程圖。 第12圖在本發明之第2實施例的第1圖之構造,以流 程圖表示量測係未知之容積Vi的一種手段。 第13圖在本發明之第2實施例的第1圖之構造,以流 程圖表示量測係未知之容積Vl的別的手段。 魯 第14圖表示專利文獻1的質量流量控制器之絕對流量 的校正系統之配管圖。 第15圖表示專利文獻2之氣體配管系的校正系統之配 管的模式圖。 第16圖表示專利文獻3之氣體質量流量量測系統的示 意圖。 【主要元件符號說明】 10 ~質量流量控制器; 11〜壓力感測器; 2〇97-8〇68-PF;Ahddub 42 1329191 12~溫度感測器; 13〜處理室; 14〜真空泵; 15~壓力計; 16〜調壓器; 20〜校正單元; 21〜第一切斷閥; 22~第二切斷閥; 23~第三切斷閥; 24〜第四切斷閥; 25、26、27〜沖洗閥; 28〜第五切斷閥; 3 0〜氣體流路, 31 ~排氣流路; 32~沖洗用管線; 33〜第一氣體供給路; 34~第二氣體供給路; 35〜第三氣體供給路; dG〜流入質量; Gl、G2~ 質量; (1卩~設定壓力範圍; Pl、P2、P3~ 壓力; Q〇〜絕對流量; T!、τ2、τ3〜溫度; V,、V2、V3~容積; Zl-第一壓縮因子; Z2〜第二壓縮因子; r〇〜比重; dt〜經過時間。 2097-8068-PF;Ahddub 43Fig. 8 is a graph showing an example of the accuracy of the case where the absolute factor is corrected using the compression factor Z and the case where the absolute flow rate is not corrected using the compression factor Z in the first embodiment of the present invention. Fig. 9 is a graph showing the relationship between the pressure and the measurement time ' in the first embodiment of the present invention. Fig. 1 is a view showing the case where the fluid of the first embodiment of the present invention is nitrogen gas at a certain volume. The relationship between the pressure and the measurement time is tabulated. Fig. 1 is a flow chart showing the procedure of correcting the absolute flow rate of the circuit shown in Fig. 1 of the first embodiment of the present invention. Fig. 12 is a view showing the structure of Fig. 1 of the second embodiment of the present invention, showing a means for measuring the volume Vi which is unknown to the system. Fig. 13 is a view showing the structure of Fig. 1 of the second embodiment of the present invention, showing another means for measuring the volume V1 which is unknown to the system. Lu 14 shows a piping diagram of a correction system for the absolute flow rate of the mass flow controller of Patent Document 1. Fig. 15 is a schematic view showing the piping of the calibration system of the gas piping system of Patent Document 2. Fig. 16 is a view showing the gas mass flow rate measuring system of Patent Document 3. [Main component symbol description] 10 ~ mass flow controller; 11 ~ pressure sensor; 2〇97-8〇68-PF; Ahddub 42 1329191 12~ temperature sensor; 13~ processing chamber; 14~ vacuum pump; ~ pressure gauge; 16~ regulator; 20~ correction unit; 21~ first shut-off valve; 22~ second shut-off valve; 23~ third shut-off valve; 24~ fourth shut-off valve; 27~flushing valve; 28~5th shut-off valve; 3 0~ gas flow path, 31~exhaust flow path; 32~flushing line; 33~first gas supply path; 34~second gas supply path; 35~third gas supply path; dG~ inflow mass; Gl, G2~ mass; (1卩~ set pressure range; Pl, P2, P3~ pressure; Q〇~ absolute flow; T!, τ2, τ3~ temperature; V, V2, V3~ volume; Zl-first compression factor; Z2~ second compression factor; r〇~ specific gravity; dt~ elapsed time. 2097-8068-PF; Ahddub 43
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005166152A JP4648098B2 (en) | 2005-06-06 | 2005-06-06 | Absolute flow verification system for flow control equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200710374A TW200710374A (en) | 2007-03-16 |
TWI329191B true TWI329191B (en) | 2010-08-21 |
Family
ID=37498278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095118406A TW200710374A (en) | 2005-06-06 | 2006-05-24 | Absolute flow rate calibration system in flow rate control device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4648098B2 (en) |
KR (1) | KR100919800B1 (en) |
CN (1) | CN100582984C (en) |
TW (1) | TW200710374A (en) |
WO (1) | WO2006132073A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI735893B (en) * | 2018-07-09 | 2021-08-11 | 日商Ckd股份有限公司 | Gas flow verification unit |
TWI797474B (en) * | 2019-09-10 | 2023-04-01 | 大陸商中微半導體設備(上海)股份有限公司 | System and method for realizing gas flow verification in plasma processing device |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007102319A1 (en) * | 2006-03-07 | 2007-09-13 | Ckd Corporation | Gas flow rate verification unit |
CN101563663B (en) * | 2006-12-05 | 2011-09-21 | 株式会社堀场Stec | Testing method of flow controller |
JP5134841B2 (en) * | 2007-03-16 | 2013-01-30 | Ckd株式会社 | Gas supply unit |
JP4870633B2 (en) | 2007-08-29 | 2012-02-08 | シーケーディ株式会社 | Flow rate verification system and flow rate verification method |
JP4598044B2 (en) | 2007-10-29 | 2010-12-15 | シーケーディ株式会社 | Flow verification failure diagnosis device, flow verification failure diagnosis method, and flow verification failure diagnosis program |
KR100969990B1 (en) * | 2008-03-21 | 2010-07-15 | 주식회사 아토 | Checking method and apparatus of mass flow controller |
US7891228B2 (en) * | 2008-11-18 | 2011-02-22 | Mks Instruments, Inc. | Dual-mode mass flow verification and mass flow delivery system and method |
JP5346628B2 (en) | 2009-03-11 | 2013-11-20 | 株式会社堀場エステック | Mass flow controller verification system, verification method, verification program |
CN101608615B (en) * | 2009-07-15 | 2010-12-29 | 东北大学 | System and method for automatically measuring property of vapor stream vacuum pump |
JP2011096533A (en) * | 2009-10-30 | 2011-05-12 | Toyota Motor Corp | Fuel cell system |
JP5538119B2 (en) * | 2010-07-30 | 2014-07-02 | 株式会社フジキン | Calibration method and flow rate measuring method of flow controller for gas supply device |
CN102052940B (en) * | 2010-10-26 | 2012-01-04 | 中国航天科技集团公司第五研究院第五一○研究所 | Device for measuring extremely-low gas flow based on static expansion vacuum standard |
CN102022618B (en) * | 2010-11-01 | 2014-10-29 | 云南大红山管道有限公司 | Method for monitoring grain diameter of ore pulp transported by long-distance pipeline in complex terrain |
JP5703032B2 (en) * | 2011-01-06 | 2015-04-15 | 株式会社フジキン | Flow rate measuring method of flow controller for gas supply device |
DE102011100029C5 (en) | 2011-04-29 | 2016-10-13 | Horiba Europe Gmbh | Device for measuring a fuel flow and calibration device therefor |
JP6321972B2 (en) * | 2014-01-21 | 2018-05-09 | 株式会社フジキン | Pressure flow control device and overshoot prevention method at the start of the flow control |
CN104142695A (en) * | 2014-07-02 | 2014-11-12 | 苏州宏瑞净化科技有限公司 | Converging type air flow control device |
KR101614303B1 (en) | 2014-08-22 | 2016-04-21 | 주식회사 아스플로 | Apparatus for performance test of gas regulator, test method of hysteresis, step function response and set point stability using the apparatus |
JP6047540B2 (en) * | 2014-11-05 | 2016-12-21 | Ckd株式会社 | Flow rate verification unit |
JP6554404B2 (en) | 2015-11-25 | 2019-07-31 | 東京エレクトロン株式会社 | Gas temperature measurement method and gas introduction system |
WO2017122714A1 (en) | 2016-01-15 | 2017-07-20 | 株式会社フジキン | Gas supply device capable of measuring flow rate, flowmeter, and flow rate measuring method |
US10684159B2 (en) * | 2016-06-27 | 2020-06-16 | Applied Materials, Inc. | Methods, systems, and apparatus for mass flow verification based on choked flow |
JP6795832B2 (en) | 2016-07-05 | 2020-12-02 | 株式会社フジキン | Flow control equipment, flow calibration method for flow control equipment, flow measurement equipment and flow measurement method using flow measurement equipment |
JP6767232B2 (en) * | 2016-10-14 | 2020-10-14 | 東京エレクトロン株式会社 | Method to obtain the output flow rate of gas output by the flow rate controller of the substrate processing device |
JP6775403B2 (en) * | 2016-12-14 | 2020-10-28 | 株式会社堀場エステック | Fluid property measurement system |
JP6929566B2 (en) | 2017-02-10 | 2021-09-01 | 株式会社フジキン | Flow rate measuring method and flow measuring device |
CN107271175A (en) * | 2017-07-24 | 2017-10-20 | 吉林省众鑫汽车装备有限公司 | A kind of detection means and detection method of ammonia metering valve |
JP7208634B2 (en) | 2017-07-31 | 2023-01-19 | 株式会社フジキン | Fluid control system and flow measurement method |
JP6960278B2 (en) * | 2017-08-31 | 2021-11-05 | 東京エレクトロン株式会社 | How to inspect the flow measurement system |
JP2019078566A (en) * | 2017-10-20 | 2019-05-23 | 東京瓦斯株式会社 | Piping capacity estimation device and piping capacity estimation method |
KR102628015B1 (en) * | 2017-12-01 | 2024-01-23 | 삼성전자주식회사 | mass flow controller, manufacturing apparatus of semiconductor device and maintenance method of the same |
JP2019124532A (en) * | 2018-01-15 | 2019-07-25 | 東京瓦斯株式会社 | Pipe capacity estimation device and pipe capacity estimation method |
US10866135B2 (en) * | 2018-03-26 | 2020-12-15 | Applied Materials, Inc. | Methods, systems, and apparatus for mass flow verification based on rate of pressure decay |
JP7061932B2 (en) * | 2018-06-08 | 2022-05-02 | 東京エレクトロン株式会社 | Flow measurement method and flow measurement device |
SG11202100784RA (en) * | 2018-07-30 | 2021-02-25 | Fujikin Kk | Flow rate control system and flow rate measurement method |
JP2020139864A (en) * | 2019-02-28 | 2020-09-03 | 株式会社堀場エステック | Flow rate calculation system, program for flow rate calculation system, flow rate calculation method, and flow rate calculation device |
JP7273596B2 (en) * | 2019-04-08 | 2023-05-15 | 株式会社堀場エステック | Flow rate calculation device, flow rate calculation system, and flow rate calculation device program |
CN112127869B (en) * | 2019-06-24 | 2024-06-25 | 中石化石油工程技术服务有限公司 | Zero-flow-viewing correction method, oil-gas water flow logging method and turbine flow instrument |
TWI774227B (en) * | 2020-02-21 | 2022-08-11 | 日商富士金股份有限公司 | Flow rate control device, control method thereof and control program thereof |
JP7306300B2 (en) * | 2020-03-13 | 2023-07-11 | 株式会社島津製作所 | Estimator and vacuum valve |
CN112520704B (en) * | 2020-11-26 | 2024-04-26 | 河南省日立信股份有限公司 | Sulfur hexafluoride gas recovery device and recovery rate measurement method |
CN113351120B (en) * | 2021-06-08 | 2022-09-16 | 哈尔滨工业大学 | Gas mixing system and mixing method |
CN113776628B (en) * | 2021-08-13 | 2024-04-23 | 青岛科技大学 | Laminar flow flowmeter testing arrangement of high low pressure and temperature adjustable |
JP2023028303A (en) * | 2021-08-19 | 2023-03-03 | 株式会社島津製作所 | Gas regulator and method |
CN113959533B (en) * | 2021-09-16 | 2023-08-11 | 张家港氢芯电气系统科技有限公司 | High-precision high-pressure hydrogen mass flowmeter calibration method |
CN115140707A (en) * | 2022-06-30 | 2022-10-04 | 西安热工研究院有限公司 | Hydrogen acquisition device for preparing monocrystalline silicon solar cell piece and hydrogen calculation method |
CN118426503A (en) * | 2024-04-28 | 2024-08-02 | 广东先导元创流体技术有限公司 | Mass flow controller and mass flow detection method thereof |
CN118426504A (en) * | 2024-04-28 | 2024-08-02 | 广东先导元创流体技术有限公司 | Mass flow controller |
CN118687830A (en) * | 2024-08-26 | 2024-09-24 | 无锡尚积半导体科技有限公司 | MFC calibration method |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5484763A (en) * | 1977-12-19 | 1979-07-05 | Mitsubishi Electric Corp | Volume measuring method and apparatus |
JPH0394122A (en) * | 1989-09-07 | 1991-04-18 | Ngk Insulators Ltd | Method for measuring volume of air gap in radioactive solid waste container and method for fixing radioactive solid waste |
JPH06160152A (en) * | 1992-11-25 | 1994-06-07 | Nec San-Ei Instr Co Ltd | Micro-volume measuring device |
JP2500788B2 (en) * | 1993-11-11 | 1996-05-29 | 日本電気株式会社 | Mass flow controller device and its calibration method |
JP2635929B2 (en) * | 1994-04-12 | 1997-07-30 | シーケーディ株式会社 | Mass flow controller absolute flow rate verification system |
JP2659334B2 (en) * | 1994-05-12 | 1997-09-30 | シーケーディ株式会社 | Mass flow controller flow rate verification system |
US5684245A (en) * | 1995-11-17 | 1997-11-04 | Mks Instruments, Inc. | Apparatus for mass flow measurement of a gas |
JP3367811B2 (en) * | 1996-01-05 | 2003-01-20 | シーケーディ株式会社 | Gas piping system certification system |
JP3372840B2 (en) * | 1997-09-08 | 2003-02-04 | 九州日本電気株式会社 | Dry etching apparatus and gas flow control inspection method |
JP2002099330A (en) * | 2000-09-22 | 2002-04-05 | Aera Japan Ltd | Flow controller |
JP2003269258A (en) * | 2002-03-13 | 2003-09-25 | Toyota Motor Corp | Gaseous fuel level calculating method and apparatus for internal combustion engine |
-
2005
- 2005-06-06 JP JP2005166152A patent/JP4648098B2/en active Active
-
2006
- 2006-05-22 WO PCT/JP2006/310126 patent/WO2006132073A1/en active Application Filing
- 2006-05-22 CN CN200680020108A patent/CN100582984C/en active Active
- 2006-05-24 TW TW095118406A patent/TW200710374A/en unknown
-
2008
- 2008-01-03 KR KR1020087000114A patent/KR100919800B1/en active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI735893B (en) * | 2018-07-09 | 2021-08-11 | 日商Ckd股份有限公司 | Gas flow verification unit |
TWI797474B (en) * | 2019-09-10 | 2023-04-01 | 大陸商中微半導體設備(上海)股份有限公司 | System and method for realizing gas flow verification in plasma processing device |
Also Published As
Publication number | Publication date |
---|---|
WO2006132073A1 (en) | 2006-12-14 |
KR100919800B1 (en) | 2009-10-01 |
JP2006337346A (en) | 2006-12-14 |
KR20080016932A (en) | 2008-02-22 |
CN100582984C (en) | 2010-01-20 |
JP4648098B2 (en) | 2011-03-09 |
CN101194215A (en) | 2008-06-04 |
TW200710374A (en) | 2007-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI329191B (en) | ||
JP5512517B2 (en) | Mass flow verification device and associated method capable of providing different volumes | |
TWI444800B (en) | Calibration method and flow measurement method of flow controller for gas supply device | |
TWI541626B (en) | Gas flow test system and gas flow test unit | |
US8857456B2 (en) | Method and apparatus for in situ testing of gas flow controllers | |
TWI642910B (en) | Flow control device, flow correction method for flow control device, flow measurement device, and flow measurement method using flow measurement device | |
US9163969B2 (en) | Flow rate measurement device and flow rate measurement method for flow rate controller for gas supply device | |
TW201126144A (en) | Gas flow rate verification unit | |
US20200166400A1 (en) | Methods, systems, and apparatus for mass flow verification based on choked flow | |
JP5123175B2 (en) | Thermal mass flow meter and thermal mass flow controller | |
KR20170113154A (en) | Substrate processing apparatus, gas supply method, substrate processing method, and film forming method | |
JP2010209980A (en) | Gas supply device and gas station equipped with gas supply device | |
CN110234965B (en) | Flow rate measuring method and flow rate measuring device | |
JP7273596B2 (en) | Flow rate calculation device, flow rate calculation system, and flow rate calculation device program | |
JP4753251B2 (en) | Gas flow meter and gas flow control device | |
TWI848063B (en) | Flow rate calculation system, recording medium, flow rate calculation method, and flow rate calculation device | |
JP2020008428A (en) | Gas flow rate verification unit | |
JP4442309B2 (en) | Abnormality detection device for fuel processing system | |
JP7249030B2 (en) | Volume measuring method in flow measuring device and flow measuring device | |
JP2010066800A (en) | Flow controller |