1328683 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種介電泳晶片及其製造方法，特別是有關 於一種具有三維方向電極結構之介電泳晶片及其製造方法。 【先前技術】 近年來’微機電系統（Micro-Electro-Mechanical System， MEMS)技術發展快速且颇，並廣泛應驗各個領域，其中又 以生物醫學之制系統最為受職視，目前的生物檢㈣統已朝 向微小化及自動化發展，並將多個微型裝置整合於一微小晶片 中，其重要性及未來發展潛力受到重視。 π王微卿程中，如細胞、細菌、血球、去氧核糖核酸: 子（d^)Xyrib〇nudeic _，臟）等檢體分離的步驟為相當重-環’騎電電泳之分轉控方式，因具備有⑴可單] 量操控檢驗子、⑵以非接觸式、⑴易於整合复他功] 不會對檢體細胞造成傷害、及(5)操控模式具多; 视點’因此介電電泳之分離方式已成為 為使用之方法。 ^心離步驟〗 習用之介電泳晶片製程，係先於基板上 技術將電極薄膜層心成醇：: 一具有中_=紐上’絲絲紅_合，而得至 工&這之介電冰晶片，檢體可於中空 由平面電極之電泳力而完成分離收集檢體之動作。夕， 然而’用以產生介電力之電極受限於習用之微機電製幻 1328683 空間因素，其電極觀以杨方式設置於介電泳^之中，而平 面電極僅能產生沿著基板平面之單—方向的介電場，導致電極: 介電泳力對於檢體粒子的操控能力相當有限，並且檢體係透過溶 液通過中空之介電泳晶片，因而產生檢體粒子受到的介電泳力過 -於微弱關題，如此都將導致㈣介電泳W分離及收集檢體粒 -子的效果不佳，亦使得檢體取樣的消耗數量必須相對增加。 此外，製造廠商必須透過蝕刻顯影製程才可形成習用之平面 •電極，因此用城積電極之基板材¥，必須選擇玻璃或是石夕晶片 基板材料，以使得基板可有效抵抗腐錄極強之腐叙液的侵^， 並保持其表Φ完整性，但昂貴絲板㈣卻也姆提高了製造成 本0 於習知之介電泳晶#製造方法巾’需要使用大量的腐讎極 強之化學溶液進行侧，腐紐所溶解的金屬離子或雜質等汗染 物容易殘留於基材上，因此必須先賊留污雜去除後才可進行 鲁後續的製程’不但製造過程繁複亦使製造成本提高， 問題已受到高度重視，為了生態環境不受有毒之化學魏的破 壞，於勤j過程中所產生之化學廢液不可任意獄，因此製造廠 •商需要貞擔廢液时處理的工作所f之設備及人力資源的成本支 --出。且對製造成本亦是一筆不小的負擔。 【發明内容】 鐾於以上的問題，本發明之目的在於提供_齡電泳晶片及 其製造方法’藉以改良先前技術之平面電極所產生之介電泳力過 於微弱U製程繁複、製造成本增加、及對魏產生污染的限 7 1328683 制或缺點。 、、為了達到上述目的，本發明揭露一種介電泳晶片之製造方 法，首先提供-高分子絲’接著貼喊數個電極於第—模具上， 並以第-模具對高分子基4反之第一側進;亍熱壓。接著以—第二模 具對南分子基板之第一側進行熱m，使得高分子以反之第一側上 /形成-環触合有電極之凹設空間。最後_一高分子蓋板至高 刀子基板之第-側上，而制—具有複數個職電極之流道的介 電泳晶片。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectrophoretic wafer and a method of fabricating the same, and more particularly to a dielectrophoretic wafer having a three-dimensional electrode structure and a method of fabricating the same. [Prior Art] In recent years, 'Micro-Electro-Mechanical System (MEMS) technology has developed rapidly and quite well, and has been widely used in various fields. Among them, biomedical systems are the most widely regarded, and current biopsy (4) With the development of miniaturization and automation, and the integration of multiple micro devices into a small chip, its importance and future development potential are valued. π Wang Weiqing Cheng, such as cells, bacteria, blood cells, deoxyribonucleic acid: sub (d^) Xyrib〇nudeic _, dirty) and other methods of separation of the sample is quite heavy-loop 'riding electrophoresis. Because there are (1) controllable testers, (2) non-contact, (1) easy integration of complex work] will not cause damage to the sample cells, and (5) more control modes; view 'so electrophoresis The method of separation has become a method of use. ^心走Step〗 The conventional dielectrophoresis wafer process is based on the technique of the substrate to laminate the electrode film into a mellow:: one has _= 上上' silk red _, and it is the work & In the electric ice wafer, the sample can be separated and collected by the electrophoresis force of the planar electrode. However, the electrode used to generate dielectric power is limited by the conventional micro-electromechanical illusion 1326883 spatial factor, and the electrode view is placed in the dielectrophoresis by the Yang method, while the planar electrode can only produce a single sheet along the plane of the substrate. - The dielectric field in the direction leads to the electrode: The dielectrophoretic force is quite limited in the ability to manipulate the sample particles, and the detection system passes through the solution through the hollow dielectrophoresis wafer, thus causing the dielectrophoretic force of the sample particles to be over-weak Therefore, this will result in (4) dielectrophoresis, and the effect of collecting the sample particles is not good, and the amount of sample sampling must be relatively increased. In addition, the manufacturer must pass through the etching and development process to form a conventional planar electrode. Therefore, the base plate of the city electrode must be used, and the glass or the stone substrate material must be selected so that the substrate can effectively resist the corrosion. The intrusion of the phlegm liquid, and maintain its table Φ integrity, but the expensive silk plate (four) but also increased the manufacturing cost 0 in the conventional wisdom of the electrophoresis crystal # manufacturing method towel 'requires the use of a large number of strong chemical solutions On the side, the sweat ions such as metal ions or impurities dissolved in the rot are easily left on the substrate. Therefore, the thief must be removed before the smear can be removed to carry out the subsequent process. The manufacturing process is complicated and the manufacturing cost is increased. Has been highly valued, in order to protect the ecological environment from the poisonous chemical Wei, the chemical waste liquid generated in the process of Qin Qin can not be arbitrarily imprisoned, so the manufacturer and the manufacturer need to work on the equipment that is handled when the waste liquid is handled. And the cost of human resources - out. And it is a big burden on the cost of manufacturing. SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide an age-old electrophoretic wafer and a method for fabricating the same that the electrophoretic force generated by the planar electrode of the prior art is too weak, the U process is complicated, the manufacturing cost is increased, and Wei produced pollution limit 7 1328683 system or shortcomings. In order to achieve the above object, the present invention discloses a method for fabricating a dielectrophoretic wafer, which first provides a polymer filament followed by a plurality of electrodes on the first mold, and the first mold is opposite to the polymer base 4; Side-in; 亍 hot pressing. Then, the first side of the south molecular substrate is subjected to heat m by the second mold so that the polymer contacts the recessed space of the electrode on the first side/form-ring. Finally, a polymer cover is placed on the first side of the high-knife substrate to form a dielectrophoretic wafer having a plurality of flow paths of the electrode.
透過上述製造方法，本發明提供―種介電泳晶片，1包含一 高分子基板、絲個電極、狀―高分子额，其中祕子基板 側具有-凹々空間’複數個電極係分別以―狀間距嵌合於凹 設空間之躲，喊分子蓋板麵結合於高分子基板上，以令凹 5又空間形成-中空之流道’得到—流道周緣環繞有複數個電極之 介電泳晶片，以供檢體自流道中通過，並藉由複數個電極所產生 之三維方向的介電泳力，以快速有效地分離並收集檢體粒子。 β本發明之功效在於，不綠由難之沉解光製程，而改以 熱壓方式製造具有複數個環燒於流道周緣之電極的介電泳曰片 以大幅提升“之介電場強度，並可降低紐I纽成本， 以上之陳本發_容之制及以下之實施方式之說明 ===本發明之原理，並且提供本發明之專利中請範圍更 【實施方式】 及「第4圖」之本發明 請參閱「第1Α圖」至「第3Β圖」 8 1328683 分解步驟示意圖與流程圖。 如「第1A圖」至「第ic圖」、及「第4圖」所示，本發明 之介電泳晶片之製造方法，首先係提供一高分子基板11()(步驟 200) ’此南为子基板1〇〇係以麼克力Methacrylate， PMMA)等可被加熱後軟化之高分子材質所製成，以利後續熱壓 .‘私之成开>。接考將複數個電極120以彼此相距一間隔距離貼附 於第一模具130上，並以貼附有複數個電極12〇之第一模具13〇 鲁對高分子基板11〇之第一侧進行熱壓（步驟210)。當熱壓完成後， 將第一模具130自高分子基板110上移除，以使得複數個電極12〇 分別以相距一間距嵌合於高分子基板n〇之第一側（步驟22〇)， 且由於第一模具130與高分子基板110進行熱壓時，兩者係為緊 密貼合，故複數個電極120係完全嵌入於高分子基板11〇之中而 無露出於外。 電極120與第-模具130之間具有一脫模層17〇，以於第一 •模具130於高分子基板110上移除時，其電極120與第一模具13〇 間之接合力’係小於電極120與高分子基板11〇之間的接合力， 致使電極120嵌合於高分子基板110巾，而不隨著第_模具⑽ 的移除而脫離於高分子基板110,並且本發明揭露之第一模具13〇 -可重複使用。 Ά 如「第2A圖」至「第2C圖」、及「第4圖」所示，接著以 -第二模具14G對高分子基板11G嵌合有複數電極⑽之第一側 進行鍾（步驟23〇)，待熱麗處理製程完畢後將第二模具_移 除，使得高分子基板110之第-側形成一具有環繞電極咖之二 9 1328683 詨空間。 其中，第二模具140才目對於高分子基板110之一側形成有一 f部14卜用以職合有電極12〇之高分子基板no u進 行熱塵’以形成對應於凸部141形狀之凹設空間。凸部⑷包含 兩模具板1411，層疊設置於第二模具H0上，以形成凸部⑷之 .外形。兩模具板1411之間、及模具板1411與第二模具140之係 刀別以‘著層1412進行接合，而本發明所揭露之黏著層1412 係為鈦（Τι)金屬或是鈦合金所形成，以使模具板1411與第二模 具140相互緊密結合，並可避免第二模具140對高分子基板110 進行熱壓處理時，叫溫及壓力之因素導致模具板刚產生脫落 之問題。 如第3Α圖」、「第3Β圖」、及「第4圖」所示，接著熱壓 一高分子蓋板150至高分子基板11〇之第一侧上（步驟24〇)，以 覆盍住南分子基板no第—側上之凹設空間，並令凹設空間形成 #具有複數個以等距排列之電極的流道16〇。如「第3C圖」所示， 最後得到一流道160周緣環繞有複數個等距排列電極12〇之介電 泳晶片100，以供檢體（圖中未示）自流道16〇中通過，並藉由 —複數個電極120所產生之三維（3D)方向的介電泳力，以快速有 -效地分離並收集檢體粒子。其中，本發明之高分子蓋板15〇可為 二曱基矽氧烷（polydimethylsiioxance，pDMS)，以與高分子基板 110完全密封接合。 與習知技術相較，本發明所揭露之介電泳晶片及其製造方法 係利用熱壓技術，將複數個電極環繞嵌合於晶片之流道周緣，不 1328683 ，可快逮簡單地製造出具有三維（3D)方向介電泳力之晶片，以 提升介電泳以雜體好絲與轉之操麵力，並^ 化流程及降低製造成本。 田間 賴本购之實_揭露如上所述，㈣_以限定本發 -明，任何熟習相關技藝者，在不脫離本發明之精神和範圍内，舉 ―，凡依本發”請範騎狀雜、構造、及精神當可做些許 之變更’因此本發明之專利保護範圍須視本說明書所附之申請專 參利範圍所界定者為準。 【圖式簡單說明】 第1A圖為本發明之分解步驟示意圖； 第1B圖為本發明之分解步驟示意圖； 第1C圖為本發明之分解步驟示意圖； 第2A圖為本發明之分解步驟示意圖； 第2B圖為本發明之分解步驟示意圖； 第2C圖為本發明之分解步驟示意圖； 第3A圖為本發明之分解步驟示意圖； 第3B圖為本發明之分解步驟示意圖； ^3C圖為本發明之介電泳晶片之立體示意圖·，以及 第4圖為本發明之步驟流程圖。 【主要元件符號說明】 100 介電泳晶片 110 向分子基板 120 電極 11 1328683 130 第一模具 140 第二模具 141 凸部 1411 模具板 1412 黏著層 150 尚分子盖板 160 流道 170 脫模層 步驟200 提供一高分子基板 步驟210 貼附有複數個電極之第一模具對高分子基板之第 一側進行熱壓 步驟220 電極之間以相距一間距欲合於高分子基板之第一 側 步驟230 以第二模具對高分子基板之第一側進行熱壓 步驟240 熱壓高分子蓋板至高分子基板之第一側 12Through the above manufacturing method, the present invention provides a type of dielectrophoresis wafer, which comprises a polymer substrate, a wire electrode, a shape-molecular amount, wherein the side of the secret substrate has a concave cavity space, and the plurality of electrode systems are respectively shaped. The spacing is embedded in the recessed space, and the molecular cover surface is bonded to the polymer substrate so that the concave 5 is formed in a space-hollow flow path to obtain a dielectrophoretic wafer surrounded by a plurality of electrodes around the flow path. The sample is passed through the flow path, and the dielectrophoretic force in the three-dimensional direction generated by the plurality of electrodes is used to quickly and efficiently separate and collect the sample particles. The effect of the present invention is that the non-green is difficult to solve the light process, and the dielectrophoretic film having a plurality of rings burned on the periphery of the flow channel is manufactured by hot pressing to greatly increase the dielectric strength of the dielectric. And the cost of the New Zealand New Zealand can be reduced. The above description of the present invention and the following embodiments of the present invention === the principle of the present invention, and the scope of the invention is provided in the scope of the invention and the fourth embodiment. For the present invention, please refer to "1D" to "3D" 8 1328683 Decomposition step diagram and flow chart. As shown in "1A to ic" and "4", the method of manufacturing a dielectrophoretic wafer of the present invention first provides a polymer substrate 11 (step 200). The sub-substrate 1 is made of a polymer material which can be heated and softened by a Methacrylate, PMMA, etc., in order to facilitate subsequent hot pressing. The plurality of electrodes 120 are attached to the first mold 130 at a distance from each other, and the first mold 13 to which the plurality of electrodes 12 are attached is attached to the first side of the polymer substrate 11 Hot pressing (step 210). After the hot pressing is completed, the first mold 130 is removed from the polymer substrate 110, so that the plurality of electrodes 12〇 are respectively fitted to the first side of the polymer substrate n〇 at a distance (step 22〇). Further, when the first mold 130 and the polymer substrate 110 are hot-pressed, the two are closely adhered to each other, so that the plurality of electrodes 120 are completely embedded in the polymer substrate 11 without being exposed. There is a release layer 17〇 between the electrode 120 and the first mold 130, so that when the first mold 130 is removed on the polymer substrate 110, the bonding force between the electrode 120 and the first mold 13 is less than The bonding force between the electrode 120 and the polymer substrate 11〇 causes the electrode 120 to be fitted to the polymer substrate 110, without being separated from the polymer substrate 110 as the first mold (10) is removed, and the present invention discloses The first mold 13 〇 - can be reused.所示 As shown in "2A" to "2C" and "4", the first side of the plurality of electrodes (10) is fitted to the polymer substrate 11G by the second mold 14G (step 23). 〇), after the heat treatment process is completed, the second mold is removed, so that the first side of the polymer substrate 110 forms a space of 9 1328683 环绕 with the surrounding electrode. The second mold 140 is formed with a f portion 14 on one side of the polymer substrate 110, and a thermal substrate is formed on the polymer substrate no u for the electrode 12 以 to form a concave shape corresponding to the shape of the convex portion 141. Set the space. The convex portion (4) includes two mold plates 1411 stacked on the second mold H0 to form an outer shape of the convex portion (4). The two mold plates 1411 and the mold plates 1411 and the second mold 140 are joined by a layer 1412, and the adhesive layer 1412 disclosed in the present invention is formed of titanium (metal) or titanium alloy. In order to make the mold plate 1411 and the second mold 140 tightly coupled to each other, and to prevent the second mold 140 from performing hot pressing treatment on the polymer substrate 110, the temperature and pressure factors cause the mold plate to just fall off. As shown in the third figure, the third figure, and the fourth figure, the polymer cover 150 is then hot pressed onto the first side of the polymer substrate 11 (step 24) to cover A space is formed on the first side of the south molecular substrate no, and the recessed space is formed to form a flow path 16 having a plurality of electrodes arranged equidistantly. As shown in the "3C", finally, a dielectrophoretic wafer 100 surrounded by a plurality of equidistantly arranged electrodes 12 is surrounded by a first-class track 160, for the sample (not shown) to pass through the flow path 16〇, and borrowed The three-dimensional (3D) direction dielectrophoretic force generated by the plurality of electrodes 120 is used to rapidly and efficiently separate and collect the sample particles. The polymer cover 15 of the present invention may be polydimethylsiioxane (pDMS) to be completely hermetically bonded to the polymer substrate 110. Compared with the prior art, the dielectrophoresis wafer and the manufacturing method thereof disclosed by the present invention use a hot pressing technique to surround a plurality of electrodes around the circumference of the flow path of the wafer, not 1328683, and can be quickly and easily manufactured. Three-dimensional (3D) direction dielectrophoretic force wafers to enhance the surface power of dielectrophoresis to improve the flow and reduce manufacturing costs. The field is based on the above, (4) _ to limit the hair - Ming, any familiar with the relevant art, without departing from the spirit and scope of the present invention, Miscellaneous, construction, and spirit may be changed a little. Therefore, the scope of patent protection of the present invention is subject to the definition of the scope of application of the application attached to the specification. [FIG. 1A] FIG. FIG. 1B is a schematic view showing a decomposition step of the present invention; FIG. 1C is a schematic view showing a decomposition step of the present invention; FIG. 2B is a schematic view showing a decomposition step of the present invention; 2C is a schematic diagram of a decomposition step of the present invention; FIG. 3A is a schematic diagram of an exploded step of the present invention; FIG. 3B is a schematic diagram of an exploded step of the present invention; FIG. 3C is a schematic perspective view of a dielectrophoretic wafer of the present invention, and The figure is a flow chart of the steps of the present invention. [Main component symbol description] 100 Dielectrophoresis wafer 110 to molecular substrate 120 Electrode 11 1328683 130 First mold 140 Second mold 141 convex portion 1411 Die plate 1412 Adhesive layer 150 Molecular cover plate 160 Flow path 170 Release layer step 200 Provide a polymer substrate Step 210 Attach a plurality of electrodes to the first mold to perform a hot pressing step 220 on the first side of the polymer substrate The electrodes are spaced apart from each other at a distance from the first side of the polymer substrate. Step 230: The second side of the polymer substrate is subjected to a hot pressing step 240. The hot-pressed polymer cover is applied to the first side of the polymer substrate.