TWI318009B - Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same - Google Patents
Semiconductor device, display device, and light-emitting device, and methods of manufacturing the sameInfo
- Publication number
- TWI318009B TWI318009B TW092131845A TW92131845A TWI318009B TW I318009 B TWI318009 B TW I318009B TW 092131845 A TW092131845 A TW 092131845A TW 92131845 A TW92131845 A TW 92131845A TW I318009 B TWI318009 B TW I318009B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- methods
- light
- same
- display device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Electromagnetism (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002339952 | 2002-11-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200409367A TW200409367A (en) | 2004-06-01 |
TWI318009B true TWI318009B (en) | 2009-12-01 |
Family
ID=32310633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092131845A TWI318009B (en) | 2002-11-22 | 2003-11-13 | Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same |
Country Status (5)
Country | Link |
---|---|
US (1) | US20040099926A1 (zh) |
EP (1) | EP1426813B1 (zh) |
KR (2) | KR101165277B1 (zh) |
CN (1) | CN100392860C (zh) |
TW (1) | TWI318009B (zh) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7198832B2 (en) | 1999-10-25 | 2007-04-03 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US20100330748A1 (en) | 1999-10-25 | 2010-12-30 | Xi Chu | Method of encapsulating an environmentally sensitive device |
US8900366B2 (en) | 2002-04-15 | 2014-12-02 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
JP2004119015A (ja) * | 2002-09-20 | 2004-04-15 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
JP2004119016A (ja) * | 2002-09-20 | 2004-04-15 | Semiconductor Energy Lab Co Ltd | 発光装置 |
US7652359B2 (en) * | 2002-12-27 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Article having display device |
US7648925B2 (en) | 2003-04-11 | 2010-01-19 | Vitex Systems, Inc. | Multilayer barrier stacks and methods of making multilayer barrier stacks |
US7566001B2 (en) * | 2003-08-29 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | IC card |
US20080062451A1 (en) * | 2004-06-14 | 2008-03-13 | Semiconductor Energy | Copy Machine with Copy Control Function, Scanner and Facsimile, and Piece of Paper and Film each Installed with Semiconductor Device |
WO2006006636A1 (en) * | 2004-07-14 | 2006-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Wireless processor, wireless memory, information system, and semiconductor device |
KR101191094B1 (ko) * | 2004-08-23 | 2012-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 무선 칩 및 그 제조 방법 |
US8030132B2 (en) * | 2005-05-31 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including peeling step |
US7767498B2 (en) | 2005-08-25 | 2010-08-03 | Vitex Systems, Inc. | Encapsulated devices and method of making |
EP1995787A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method therof |
US8232621B2 (en) * | 2006-07-28 | 2012-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101478810B1 (ko) | 2006-07-28 | 2015-01-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
DE102007004303A1 (de) * | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement und Bauelement-Verbund |
KR100890250B1 (ko) * | 2007-01-08 | 2009-03-24 | 포항공과대학교 산학협력단 | 플렉서블 소자의 제조 방법 및 플렉서블 표시 장치의 제조방법 |
DE102007004304A1 (de) * | 2007-01-29 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
KR101938125B1 (ko) | 2008-12-17 | 2019-01-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
WO2011043163A1 (en) * | 2009-10-05 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
EP2494601A4 (en) | 2009-10-30 | 2016-09-07 | Semiconductor Energy Lab | SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR |
KR100978387B1 (ko) * | 2010-03-23 | 2010-08-26 | 한국기계연구원 | 박막 트랜지스터 패널 및 그 제조 방법 |
KR102091687B1 (ko) | 2012-07-05 | 2020-03-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치의 제작 방법 |
WO2014024900A1 (en) | 2012-08-10 | 2014-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
KR101552994B1 (ko) | 2012-08-31 | 2015-09-15 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
JP2014170686A (ja) * | 2013-03-04 | 2014-09-18 | Toshiba Corp | 表示素子の製造方法、表示素子及び表示装置 |
KR20150007000A (ko) | 2013-07-10 | 2015-01-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법 |
KR102059167B1 (ko) * | 2013-07-30 | 2020-02-07 | 엘지디스플레이 주식회사 | 플렉서블 유기전계 발광소자 및 그 제조 방법 |
US9269914B2 (en) | 2013-08-01 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, electronic device, and lighting device |
CN106797684B (zh) | 2014-10-17 | 2020-06-05 | 株式会社半导体能源研究所 | 发光装置、模块、电子设备以及发光装置的制造方法 |
KR102632066B1 (ko) | 2015-07-30 | 2024-02-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치의 제작 방법, 발광 장치, 모듈, 및 전자 기기 |
JP6863803B2 (ja) | 2016-04-07 | 2021-04-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
KR102388701B1 (ko) | 2016-04-12 | 2022-04-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법 및 플렉시블 디바이스의 제작 방법 |
US10424374B2 (en) | 2017-04-28 | 2019-09-24 | Micron Technology, Inc. | Programming enhancement in self-selecting memory |
US10854813B2 (en) | 2018-02-09 | 2020-12-01 | Micron Technology, Inc. | Dopant-modulated etching for memory devices |
US10424730B2 (en) | 2018-02-09 | 2019-09-24 | Micron Technology, Inc. | Tapered memory cell profiles |
US10693065B2 (en) | 2018-02-09 | 2020-06-23 | Micron Technology, Inc. | Tapered cell profile and fabrication |
CN108735865B (zh) * | 2018-05-26 | 2019-11-01 | 矽照光电(厦门)有限公司 | 一种显示结构生产方法 |
KR20210031908A (ko) * | 2018-07-10 | 2021-03-23 | 넥스트 바이오메트릭스 그룹 에이에스에이 | 전자 장치용 열전도성 및 보호성 코팅 |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4026304A (en) * | 1972-04-12 | 1977-05-31 | Hydro Med Sciences Inc. | Bone generating method and device |
JPS5435780B2 (zh) * | 1974-07-23 | 1979-11-05 | ||
US4417174A (en) * | 1980-10-03 | 1983-11-22 | Alps Electric Co., Ltd. | Electroluminescent cell and method of producing the same |
EP0112279A3 (de) * | 1982-11-17 | 1984-09-05 | Schweizerische Aluminium Ag | Vorrichtung zur portionenweisen Dosierung eines fluidisierbaren Schüttgutes und Verfahren zu deren Betrieb |
CA1214417A (en) * | 1983-05-16 | 1986-11-25 | Robert O. Horwath | Method for the detection of microorganisms producing glucose-2-oxidase |
US4580818A (en) * | 1984-10-25 | 1986-04-08 | Lyng William E | Locker latching assembly |
JPH0265895U (zh) * | 1988-11-07 | 1990-05-17 | ||
US5188876A (en) * | 1990-04-12 | 1993-02-23 | Armstrong World Industries, Inc. | Surface covering with inorganic wear layer |
DE69129907T2 (de) * | 1990-11-30 | 1998-12-10 | Idemitsu Kosan Co | Organische elektroluminszente vorrichtung |
US5359441A (en) * | 1991-12-18 | 1994-10-25 | Hitachi, Ltd. | Reflection type liquid crystal display apparatus having a reflective pixel electrode with an elongated window over a photoconductive element |
US5834327A (en) * | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
US5733814A (en) * | 1995-04-03 | 1998-03-31 | Aptek Industries, Inc. | Flexible electronic card and method |
US6027958A (en) * | 1996-07-11 | 2000-02-22 | Kopin Corporation | Transferred flexible integrated circuit |
JP3809681B2 (ja) | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
CN1495523A (zh) * | 1996-08-27 | 2004-05-12 | ������������ʽ���� | 转移方法和有源矩阵基板的制造方法 |
EP0946993B8 (en) * | 1996-09-04 | 2007-09-12 | Cambridge Display Technology Limited | Electrode deposition for organic light-emitting devices |
USRE38466E1 (en) * | 1996-11-12 | 2004-03-16 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
US6127199A (en) * | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
US5952778A (en) * | 1997-03-18 | 1999-09-14 | International Business Machines Corporation | Encapsulated organic light emitting device |
US6198220B1 (en) * | 1997-07-11 | 2001-03-06 | Emagin Corporation | Sealing structure for organic light emitting devices |
US6800378B2 (en) * | 1998-02-19 | 2004-10-05 | 3M Innovative Properties Company | Antireflection films for use with displays |
TW420965B (en) * | 1998-07-14 | 2001-02-01 | Matsushita Electric Ind Co Ltd | Dispersion-type electroluminescence element |
US6198092B1 (en) * | 1998-08-19 | 2001-03-06 | The Trustees Of Princeton University | Stacked organic photosensitive optoelectronic devices with an electrically parallel configuration |
US6274887B1 (en) * | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
US6652938B1 (en) * | 1998-11-09 | 2003-11-25 | Kaneka Corporation | Media transport belt |
KR20020011392A (ko) * | 1999-04-28 | 2002-02-08 | 메리 이. 보울러 | 산소 및 수분 열화에 대한 내성이 개선된 가요성 유기전자 장치 |
TW527735B (en) * | 1999-06-04 | 2003-04-11 | Semiconductor Energy Lab | Electro-optical device |
TW522453B (en) * | 1999-09-17 | 2003-03-01 | Semiconductor Energy Lab | Display device |
TW494447B (en) | 2000-02-01 | 2002-07-11 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
US6936485B2 (en) * | 2000-03-27 | 2005-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light emitting device |
US7525165B2 (en) * | 2000-04-17 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US6605826B2 (en) * | 2000-08-18 | 2003-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and display device |
US6664732B2 (en) * | 2000-10-26 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
TW522577B (en) * | 2000-11-10 | 2003-03-01 | Semiconductor Energy Lab | Light emitting device |
US6583440B2 (en) * | 2000-11-30 | 2003-06-24 | Seiko Epson Corporation | Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
US6717181B2 (en) * | 2001-02-22 | 2004-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent device having thin film transistor |
US20020153833A1 (en) * | 2001-04-18 | 2002-10-24 | Alvin Wu | Full-color electroluminescent lamp and manufacturing method for same |
DE10122324A1 (de) | 2001-05-08 | 2002-11-14 | Philips Corp Intellectual Pty | Flexible integrierte monolithische Schaltung |
US7211828B2 (en) * | 2001-06-20 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
TW564471B (en) * | 2001-07-16 | 2003-12-01 | Semiconductor Energy Lab | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
TW554398B (en) * | 2001-08-10 | 2003-09-21 | Semiconductor Energy Lab | Method of peeling off and method of manufacturing semiconductor device |
KR100393229B1 (ko) * | 2001-08-11 | 2003-07-31 | 삼성전자주식회사 | 자기 정렬된 게이트 구조를 포함하는 불휘발성 메모리장치 제조 방법 및 이에 의한 불휘발성 메모리 장치 |
US20030048074A1 (en) * | 2001-09-12 | 2003-03-13 | Jui-Ming Ni | Method for packaging organic electroluminescent components with polymer passivation layer and structure thereof |
US7164155B2 (en) * | 2002-05-15 | 2007-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP4052631B2 (ja) * | 2002-05-17 | 2008-02-27 | 株式会社東芝 | アクティブマトリクス型表示装置 |
US6792333B2 (en) * | 2002-06-04 | 2004-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Product management method, program for performing product management, and storage medium having recorded the program therein |
JP2004119015A (ja) * | 2002-09-20 | 2004-04-15 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
JP2004119016A (ja) * | 2002-09-20 | 2004-04-15 | Semiconductor Energy Lab Co Ltd | 発光装置 |
US6936761B2 (en) * | 2003-03-29 | 2005-08-30 | Nanosolar, Inc. | Transparent electrode, optoelectronic apparatus and devices |
-
2003
- 2003-11-12 US US10/704,761 patent/US20040099926A1/en not_active Abandoned
- 2003-11-13 TW TW092131845A patent/TWI318009B/zh not_active IP Right Cessation
- 2003-11-21 EP EP03026735.5A patent/EP1426813B1/en not_active Expired - Lifetime
- 2003-11-21 KR KR1020030083083A patent/KR101165277B1/ko active IP Right Grant
- 2003-11-22 CN CNB2003101199118A patent/CN100392860C/zh not_active Expired - Fee Related
-
2012
- 2012-04-04 KR KR1020120035149A patent/KR101229249B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20120046137A (ko) | 2012-05-09 |
TW200409367A (en) | 2004-06-01 |
KR101229249B1 (ko) | 2013-02-04 |
US20040099926A1 (en) | 2004-05-27 |
KR101165277B1 (ko) | 2012-07-19 |
KR20040045354A (ko) | 2004-06-01 |
EP1426813B1 (en) | 2013-08-21 |
CN100392860C (zh) | 2008-06-04 |
EP1426813A3 (en) | 2008-06-04 |
CN1505161A (zh) | 2004-06-16 |
EP1426813A2 (en) | 2004-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI318009B (en) | Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same | |
AU2003207090A1 (en) | Semiconductor light-emitting device and its manufacturing method | |
GB2387967B (en) | Semiconductor device and method of manufacturing the same | |
EP1513195A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF | |
HK1085052A1 (en) | Semiconductor device and method of manufacturing the same | |
TWI350589B (en) | A semiconductor device and a method of manufacturing the same | |
AU2003211857A1 (en) | Semiconductor device and its manufacturing method | |
AU2003211888A1 (en) | Semiconductor device and its manufacturing method | |
AU2003280487A1 (en) | Semiconductor device and its manufacturing method | |
TWI348329B (en) | Electroluminescent devices and their manufacture | |
EP1776846A4 (en) | ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
EP1564803A4 (en) | EMBASE AND SEMICONDUCTOR DEVICE | |
AU2003235286A1 (en) | Semiconductor light-emitting device | |
EP1482544A4 (en) | EMBASE AND SEMICONDUCTOR DEVICE | |
AU2003220830A1 (en) | Semiconductor manufacturing method and device thereof | |
EP1612861A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
AU2003244275A1 (en) | Semiconductor device and its manufacturing method | |
SG127742A1 (en) | Tie-ring type display device, and method of manufacturing the display device | |
GB2392557B (en) | Semiconductor device and method of manufacturing the same | |
AU2003280742A1 (en) | Semiconductor light-emitting device and method for manufacturing same | |
AU2003236254A1 (en) | Semiconductor device and its manufacturing method | |
AU2003234828A1 (en) | Semiconductor light-emitting device | |
EP1630872A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF | |
EP1498955A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
TWI339866B (en) | A semiconductor device and a method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |