TWI316559B - - Google Patents
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- Publication number
- TWI316559B TWI316559B TW95123599A TW95123599A TWI316559B TW I316559 B TWI316559 B TW I316559B TW 95123599 A TW95123599 A TW 95123599A TW 95123599 A TW95123599 A TW 95123599A TW I316559 B TWI316559 B TW I316559B
- Authority
- TW
- Taiwan
- Prior art keywords
- cavity
- disposed
- periphery
- disk
- carrying unit
- Prior art date
Links
- 238000001816 cooling Methods 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 13
- 239000000112 cooling gas Substances 0.000 description 8
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000110 cooling liquid Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Particle Accelerators (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95123599A TW200801213A (en) | 2006-06-29 | 2006-06-29 | High pressure encircled cooling target chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95123599A TW200801213A (en) | 2006-06-29 | 2006-06-29 | High pressure encircled cooling target chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200801213A TW200801213A (en) | 2008-01-01 |
| TWI316559B true TWI316559B (enExample) | 2009-11-01 |
Family
ID=44764979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95123599A TW200801213A (en) | 2006-06-29 | 2006-06-29 | High pressure encircled cooling target chamber |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200801213A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106399953A (zh) * | 2016-06-21 | 2017-02-15 | 乔宪武 | 一种溅射靶材自循环冷却装置 |
-
2006
- 2006-06-29 TW TW95123599A patent/TW200801213A/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106399953A (zh) * | 2016-06-21 | 2017-02-15 | 乔宪武 | 一种溅射靶材自循环冷却装置 |
| CN106399953B (zh) * | 2016-06-21 | 2018-12-18 | 杭州联芳科技有限公司 | 一种溅射靶材自循环冷却装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200801213A (en) | 2008-01-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |