TWI312857B - Low pressure dryer and substrate drying method - Google Patents

Low pressure dryer and substrate drying method Download PDF

Info

Publication number
TWI312857B
TWI312857B TW095131598A TW95131598A TWI312857B TW I312857 B TWI312857 B TW I312857B TW 095131598 A TW095131598 A TW 095131598A TW 95131598 A TW95131598 A TW 95131598A TW I312857 B TWI312857 B TW I312857B
Authority
TW
Taiwan
Prior art keywords
substrate
doc
plate
support
drying apparatus
Prior art date
Application number
TW095131598A
Other languages
Chinese (zh)
Other versions
TW200724836A (en
Inventor
Takashi Kakimura
Original Assignee
Dainippon Screen Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005260835A external-priority patent/JP2007073833A/en
Priority claimed from JP2005260775A external-priority patent/JP2007073827A/en
Application filed by Dainippon Screen Mfg filed Critical Dainippon Screen Mfg
Publication of TW200724836A publication Critical patent/TW200724836A/en
Application granted granted Critical
Publication of TWI312857B publication Critical patent/TWI312857B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00Drying solid materials or objects by processes not involving the application of heat
    • F26B5/04Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Solid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Description

1312857 九、發明說明: Γ發明所屬之技術領域】 本發明係關於減壓處理室内 之¥境氧體及畜條其 處理液的減壓乾燥裝置。 次乾臬基板上之 【先前技術】 於液晶用玻璃方形基板、半 性基板、光罩用基板、彩色濟光=;薄膜液晶用可撓 造步驟中,對基板表面進行塗佈心各種基板之製 π # ^ 光阻液等處理液之處理, 且使用乾Μ置用以乾燥該基 Μ ψ , W , 汉上之處理液。作為該乾燥 置眾所周知的有如下_乾燥裝置,其藉由減虔保持 土板之處理室内之環境氣體, &quot;、、 ..t . 1伞低處理液之沸點,且於 較短時間内乾燥基板 ^ 「直妥… 叛上之處理液。(例如,參照專利文獻!) [專利文獻1]日本專利特開2004_2417〇2號公報 [發明所欲解決之問題] 通常減壓乾燥裝置係以支撑銷進行點接觸而支撑(點支 牙)基板n若於減壓乾燥中點支縣板,則將於支 刀 &gt;、.、他。P釦產生溫度差。其原因在於:雖然於減壓 乾燥中伴隨處理液之汽化,汽化熱將自基板被吸收,但於 支撐部分與其他部分產生實質性熱容量差異,或於支樓部 刀以外之空間上產生氣流並吸收熱等。 如此右於基板上產生局部性溫度差,則將會影響到基板 上之處理液之狀態,於處理液中產生不均。 本么明係鑒於上述問題而完成者,其目的在於提供可防 止處理液之不均之減壓乾燥裝置。 112324.doc 1312857 【發明内容】 為解決上述問題,請求項1之發明係-種減壓處理室内 之環境氣體並乾燥基板上之處理液的減塵乾燥裝置,且包 含:支樓機構,其於乾燥上述基板上之處理液時’以處理 支撐面面接觸於至少上述處理液所存在之製品區域背面側 整體而支撐上述基板;及傳遞機構,其—面以傳遞支撐面 面接觸而支禮上述基板,一面於與上述處理室外之搬送機 構之間進m述基板之傳遞;±述傳遞支撐面成為上述處 理支撐面之至少一部分。 又,凊求項2之發明係如請求項丨之減壓乾燥裝置,其中 上述處理支擇面與上述傳遞支撐面由同—構件構成/、 又,請求項3之發明係如請求項r減壓乾燥裝置,其中 述傳遞支樓面由彼此離開配置之複數個第i平板構成, 上述處理支撐面由上述複數個第^板與其他第2平板構 成。 、 月长員4之叙明係如δ青求項3之減壓乾燥裝置,其中 於形成上述處理支撐面時,鄰接之上述第!平板與上述第2 平板之離開為1 mm以下。 又,請求項5之發明係如請求項3或4之減壓乾燥裝置, 其中進而包含閉塞機構,其於形成上述處理支撐面時,閉 塞鄰接之上述第1平板與上述第2平板之間的空間。 又,凊求項6之發明係如請求項3或4之減壓乾燥裝置, 中進而包含調整上述第1平板與上述第2平板之間之溫度 差的調溫機構。 a 112324.doc χ312857 鮮=請,項7之發明係如請求項…中任—項之減屡乾 …置’其中上述處理支撐面係由導體物質構成且接地。 燥=請,發明係如請求項】至4中任—項之減壓乾 ' &quot;中上述處理支撐面由絕緣物質構成。 求項9之發明係-種_處理室内之環境氣體並 4基板上之處理液的減屢乾燥裝置,且包含:支撐機 复:其於乾燥上述基板上之處理液時,以支撐面面接觸於 ^面侧而支撐上述基板;及離開機構,其於上述處理室 二環境氣體之減壓狀態下,使乾燥後之上述基板自上述 克樓面離開。 又,請求項H)之發明係如請求項9之減壓乾燥裝置,且 中上述離開機構具傷自上述支揮面突出而支禮上述基板2 支擇銷。 又,請求項11之發明係如請求項1G之減壓乾燥裝置,其 中上述離開機構進而具備有連動構件,其將上述支擇面ς 升降運動傳送至上述支樓銷,且與上述支擇面之升降連 動,使上述支撐銷對於上述支撐面出沒。 又,請求項丨2之發明係如請求項1()之減魏燥裝置,並 中上述支撐銷相對㈣於上述處理室,上述離開機構進: 具備升降機構’其藉由使上述支擇面於上述處理室相對升 降’而使上述支撐_於上述支撐面出沒。 又,請求項13之發明係、如請求項9至12中任__項之_ 乾燥裝置’其中上述支撐面由導體物質構成且接地。 又,請求項14之發明係如請求項9至以中任一項之減壓 112324.doc 1312857 乾燥裝置,其中上述支撐面由絕緣物質構成。 又,請求項is之發明係一種乾燥基板上之處理液的基板 乾燥方法,且包含:一面以支撐面面接觸而支撐上述基 板,一面減壓環境氣體並乾燥上述基板上之處理液的乾燥 步驟’及於上述乾燥步驟之後,—㈣持上述環境氣體之 …β、狀1、 面將上述基板自上述支撐面離開之離開步 [發明之效果] 根據清求項1至8之發明,藉由於處理室内之減壓時,面 接觸存在有處理液之製品區域之背面側整體並支撐基板, 2可防止處理液之不均。並且,由於傳遞支撐面係、處理支 |面之至少―部分’故而於處理支撑面不須要支禮銷。因 ( 自於支撐銷之貫通孔亦無須形成於處理支撐面,故而 可防止由貫通孔導致之處理液之不均。 支俨而Γ其根據凊求項2之發明’由於處理支撐面與傳遞 支撐面由同-構件構成,故而可使裝置構成簡化。並且, 亦可於進行基板之傳遞時, 區域存在有處理液之製品 ㈣並支撐,進行穩定之基板傳遞。 又’尤其根據請求項3夕旅nn « , 、之么月,搬送機構於端部以外之 位基板之情形時,亦可以面接觸進行基板之傳遞 ’尤其根據請求項4之發明,藉由將鄰 離開設為1,以下,而可防止產生氣流… 止處理液之不均。 』 又’尤其根據請求項$夕1。。 、么明,可防止於第1平板與第2 112324.doc 1312857 平板之間之空間產生氣流,且可防止處理液之不均。 、,又’尤其根據請求項6之發明’由於調整第!平板2 平板之間之溫度差,故而可防止處理液之不均。 又尤其根據請求項7及8之發明,可防止靜電之蓄積, 且可防止因剝離帶電而導致破壞基板。 根據請求項9至15之發明,由於於減壓狀態下自支擇面 離開乾燥後之基板’故而將基板擠壓至支撐面之力變小, 由此支撐面與基板之摩擦消失,可有效地防止使基板自支 撐面離開時之帶電。 又,尤其根據請求項1〇之發明,由於藉由支撐銷以點接 觸支樓自支#面離開之基板’故而可防止於基板之傳遞 產生帶電。 又,尤其根據請求項Π之發明’由於使支揮鎖與支撐面 之升降連動且出沒,故無須用於支撐銷之專用升降機構, 由此可使裝置構成簡化。 又,尤其根據請求項12之發明,由於支撐銷固定,且藉 由支撐面之升降而使支撐銷出沒於支撐面,故而無須用於 支#銷之專用升降機構’可使裝置構成簡化。 又,尤其根據請求項13及14之發明,可防止因接觸帶電 而導致破壞元件。 【實施方式】 以下,一面參照圖式一面說明本發明之實施形態。 &lt;1.第1實施形態&gt; 圖1係表示第1實施形態之減壓乾燥裝置la之概略構成 112324.doc 1312857 圖。該減麼乾燥裝置la具有如下功能:藉由於處理室則 配置有基板w之狀態下減壓處理室2〇内之環境氣體,而使 塗佈於基板W上之光阻液等處理液乾燥。 減壓乾燥裝置la具備形成有處理基板1之處理室20之腔 室2。腔室2包含可分離之基座體21與蓋體22。將基座體η 口疋配置另方面设蓋體22連接於懸臂23且可藉由懸臂 23之驅動而相對於基座體21於上下方向升降。再者,以下 之說明中只要未特別提起,則將各構件之移動作為以規定 處理室20位置之固定配置之基座體21為基準的相對運動進 行說明。 於進行基板w之搬入及搬出時,蓋體22上升且腔室二開 放。另一方面,於進行基板…之乾燥時,蓋體22下降且與 基座體21接合,腔室2封閉。於蓋體22與基座體以接合之 Ρ刀為確保處理至20之氣密性,而設置有由矽橡膠等構 成之Ο形環24。 又,於腔室2内部,大致水平地設置有用以支撐基板w 之升降板3。升降板3固定於設置於腔室2外部之升降機構 3。2上,且可於上下方向升降。於該升降板3上未設置有支 撐基板W之支撐鎖等,升降板3將其上表面仏作為支撐 面,面接觸於基板W且大致水平地支撐(面支撐)基板w。 成為減壓乾燥裝置la之處理對象之基板w,於上表面形 成有處理液層,且其背面侧之下表面由升降板3支撐。基 板w中距端部例如10 區域不成為製品區域(以下,稱 為「非製品區域」),於基板貿之上表面,於包含除去該非 112324.doc -10- 1312857 製-區域之區域(以下’稱為「製品區域」)的區域形 處理液。并(I备4c。 $ 會扳3以上表面3a面接觸於至少該處理液所 在之製區域背面側整體,並支撐基板W。 :’減:乾燥裝置13具備:減壓機構40,其用以減壓處 裒土兄氣體,供給機構50 ,其用以將處理氣體供A 至處理室2〇。減壓機構40具有:作為抽吸 :; 4 1 .田丨、/ 播 且〜冉工泵 所抽吸之環境氣體之複數個抽吸配管4。 等複數個抽吸配管4貫 或 —a 頁通腔至2之基座體2丨,且連接於處理 右於封閉腔室2之狀態下驅動真空泵4ι, 抽吸配管4抽吸處理室2中 、、由 置h之外部排氣。,ΓΙΓ 減壓乾燥裝 /、错此,使處理室2〇之環境氣體減壓。 供給機構5 0係將如此船域厭备 I錢奴處理請之環境氣體恢 復至大亂壓之機構,立且借.徂仏老 Ζ# .七、、,.σ處理氣體之氣體供給部 ,’处理氣體引導至處理室20之複數個供給配 =等複數個供給配管5亦貫通腔室2之基座體 接於處理室20。#神A a* ρ 硬 乳體採用有氮氣等惰性氣體。 又’減壓乾燥裝置U具備有 含用以總體上控制穿置動作之:、、中该控制器6包 〇 衩制裝置動作之微電腦等。如圖所示,诘懕 及供給機構5G連接於控制器6,且該等動作由控制 二6’上述之懸臂23及升降機㈣等亦連接帅 之升降及升降板3之升降亦由_二 八 # ^如上方式構成之減壓乾燥裝置1 a之動作進 說明。圖2係表示Μ乾燥裝置h之動作流程圖。該動作 112324.doc 1312857 流程係根據成為處理對象之4 __ 動作之開始時間點設為如下者_ 内,蓋體22上升且腔室2開放。 個基板W而完成者。於該 .基板W不存在於腔室2 目 701312857 IX. OBJECTS OF THE INVENTION: TECHNICAL FIELD The present invention relates to a vacuum drying apparatus for a treatment liquid in a vacuum treatment chamber. [Prior Art] On a glass square substrate for liquid crystal, a semi-substrate, a substrate for a photomask, and a color light-emitting light; in a flexible step for thin film liquid crystal, a substrate is coated on the surface of the substrate. The treatment liquid such as π # ^ photoresist liquid is treated, and a dry solution is used to dry the treatment liquid of the base ψ, W, and Han. As the drying device, there is known a drying device which reduces the boiling point of the environmental treatment gas in the processing chamber of the earth plate by reducing the boiling point of the low-treatment liquid of the umbrella and drying it in a short time. Substrate ^ "Responsible for the rectification of the treatment liquid. (For example, refer to the patent document!) [Patent Document 1] Japanese Patent Laid-Open Publication No. 2004- 217 No. 2 [Problems to be Solved by the Invention] Generally, the vacuum drying apparatus is supported When the pin is in contact with the pin, the substrate n is supported. (If the substrate is n-pointed under decompression and drying, the temperature difference will be generated in the knife, &gt;, and the P button. The reason is that although the pressure is reduced In the drying, with the vaporization of the treatment liquid, the heat of vaporization will be absorbed from the substrate, but a substantial difference in heat capacity is generated between the support portion and other portions, or a gas flow is generated in a space other than the branch knife and absorbs heat, etc. If a local temperature difference is generated, the state of the treatment liquid on the substrate will be affected, and unevenness will occur in the treatment liquid. The present invention has been made in view of the above problems, and the object thereof is to provide a treatment liquid which can prevent the treatment liquid. In order to solve the above problems, the invention of claim 1 is a dust-reducing and drying device for decompressing the ambient gas in the chamber and drying the treatment liquid on the substrate, and includes a branching mechanism for supporting the substrate when the processing liquid on the substrate is dried to be in contact with at least the entire back side of the product region where the processing liquid exists; and a transfer mechanism that transmits the support When the surface is in contact with the substrate, the transfer of the substrate is performed between the transfer mechanism and the transfer mechanism outside the processing chamber; and the transmission support surface is at least a part of the processing support surface. The invention relates to a vacuum drying device of the present invention, wherein the processing support surface and the transmission supporting surface are composed of the same member, and the invention of claim 3 is as claimed in claim d, and the transmission branch is provided. The surface is composed of a plurality of ith plates that are disposed apart from each other, and the processing support surface is composed of the plurality of slabs and the other second slabs. In the vacuum drying apparatus of the present invention, in the case of forming the processing support surface, the distance between the adjacent slab and the second flat plate is 1 mm or less. Further, the invention of claim 5 is as follows. The vacuum drying apparatus according to claim 3 or 4, further comprising a closing mechanism that closes a space between the adjacent first flat plate and the second flat plate when the processing support surface is formed. The invention relates to the vacuum drying apparatus of claim 3 or 4, further comprising a temperature adjustment mechanism for adjusting a temperature difference between the first flat plate and the second flat plate. a 112324.doc χ312857 Fresh = please, item 7 invention For example, in the request item, the term "reduction" is set to "the above-mentioned processing support surface is composed of a conductor material and is grounded. Dry = please, the invention is as requested. In the 4th - the decompression of the item, the above-mentioned treatment support surface is composed of an insulating material. The invention of claim 9 is characterized in that: the drying device for treating the ambient gas in the chamber and the processing liquid on the substrate, and comprising: supporting machine: when the processing liquid on the substrate is dried, the surface is contacted by the support surface Supporting the substrate on the surface side; and leaving the mechanism to separate the dried substrate from the gram floor in a reduced pressure state of the processing chamber. Further, the invention of claim H) is the vacuum drying apparatus of claim 9, wherein the leaving mechanism has an injury from the above-mentioned support surface and the support of the substrate 2 is awarded. Further, the invention of claim 11 is the vacuum drying apparatus of claim 1 , wherein the leaving mechanism further includes a linking member that transmits the lifting surface lifting motion to the branch pin, and the supporting surface The lifting and lowering interlocking causes the support pin to appear on the support surface. Further, the invention of claim 2 is the dehumidification device of claim 1 (), wherein the support pin is opposite to (4) the processing chamber, and the leaving mechanism is provided with: a lifting mechanism 'by making the above-mentioned supporting surface The support chamber is relatively lifted and lowered in the processing chamber to cause the support to be present on the support surface. Further, the invention of claim 13 is as claimed in any one of claims 9 to 12, wherein the support surface is made of a conductor material and grounded. The invention of claim 14 is the decompression device of any one of claims 9 to 324, doc 1312857, wherein said support surface is comprised of an insulating material. Further, the invention of the present invention is a method for drying a substrate for drying a processing liquid on a substrate, and comprising: a drying step of supporting the substrate while supporting the substrate while reducing the ambient gas while drying the processing liquid on the substrate 'and after the drying step, - (d) holding the above-mentioned ambient gas, β, shape 1, and leaving the substrate away from the support surface [effect of the invention] according to the invention of claims 1 to 8, When the pressure is reduced in the treatment chamber, the entire surface on the back side of the product region where the treatment liquid is present is contacted and supported, and the substrate is prevented from being uneven. Moreover, since the support surface system and the support portion are at least "partial", it is not necessary to support the support surface. Since the through hole of the support pin does not need to be formed on the processing support surface, the unevenness of the treatment liquid caused by the through hole can be prevented. The invention is based on the invention of the claim 2, due to the treatment of the support surface and the transmission. Since the supporting surface is composed of the same member, the device configuration can be simplified, and when the substrate is transferred, the product (4) having the processing liquid exists in the region and supported, and stable substrate transfer is performed. Further, according to claim 3夕旅 nn « , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , It can prevent the generation of airflow... The unevenness of the treatment liquid. 』 And 'especially according to the request item $1, 、,, can prevent the airflow between the first flat plate and the second 112324.doc 1312857 flat plate. Moreover, it is possible to prevent unevenness of the treatment liquid. Moreover, 'in particular according to the invention of claim 6', since the temperature difference between the plates of the second plate is adjusted, the unevenness of the treatment liquid can be prevented. The invention of the items 7 and 8 prevents accumulation of static electricity and prevents damage to the substrate due to peeling electrification. According to the inventions of claims 9 to 15, since the substrate after drying is removed from the supporting surface under reduced pressure, The force for pressing the substrate to the support surface becomes small, whereby the friction between the support surface and the substrate disappears, and the charging of the substrate when it is separated from the support surface can be effectively prevented. Further, according to the invention of claim 1, The support pin is in contact with the base plate that is separated from the support surface by the contact point. Therefore, the transmission of the substrate can be prevented from being generated. In addition, according to the invention of the request item, the linkage between the support lock and the support surface is caused by the rise and fall of the support surface. There is no need for a special lifting mechanism for supporting the pin, so that the device can be simplified. In particular, according to the invention of claim 12, since the support pin is fixed and the support pin is lifted out of the support surface by the lifting and lowering of the support surface, The device can be simplified without the need for a special lifting mechanism for the pin. Further, according to the inventions of claims 13 and 14, it is possible to prevent the component from being damaged by contact charging. Embodiments of the present invention will be described below with reference to the drawings. <1. First Embodiment> Fig. 1 is a view showing a schematic configuration 112324.doc 1312857 of a vacuum drying apparatus 1a according to a first embodiment. The drying device 1a has a function of decompressing the atmosphere in the processing chamber 2 while the substrate w is placed in the processing chamber, and drying the processing liquid such as the photoresist on the substrate W. The vacuum drying apparatus 1a includes a chamber 2 in which a processing chamber 20 for processing the substrate 1 is formed. The chamber 2 includes a detachable base body 21 and a lid body 22. The base body η port is disposed in another aspect. It is connected to the cantilever 23 and can be moved up and down with respect to the base body 21 by the driving of the cantilever 23. Further, in the following description, as long as it is not particularly mentioned, the movement of each member is made to be the position of the predetermined processing chamber 20. The relative movement of the base body 21 in a fixed configuration is referred to as a reference. When the substrate w is carried in and out, the lid 22 is raised and the chamber 2 is opened. On the other hand, when the substrate is dried, the lid 22 is lowered and joined to the base body 21, and the chamber 2 is closed. A cymbal 24 in which the lid body 22 and the base body are joined to each other to ensure airtightness to the treatment is provided, and a cymbal ring 24 made of ruthenium rubber or the like is provided. Further, inside the chamber 2, a lifting plate 3 for supporting the substrate w is provided substantially horizontally. The lifting plate 3 is fixed to the lifting mechanism 3, 2 provided outside the chamber 2, and is movable up and down. A support lock or the like for supporting the substrate W is not provided on the lift plate 3. The lift plate 3 has its upper surface 仏 as a support surface, and is in surface contact with the substrate W and supports (surface supports) the substrate w substantially horizontally. The substrate w to be processed by the vacuum drying apparatus 1a has a treatment liquid layer formed on the upper surface thereof, and the lower surface of the back surface side is supported by the elevation plate 3. In the substrate w, for example, the region from the end portion, for example, 10 is not a product region (hereinafter referred to as a "non-product region"), and is on the upper surface of the substrate, and includes an area in which the non-112324.doc -10- 1312857 system-area is removed (below A zone-shaped treatment liquid called 'product area'). And I (4). The surface 3a of the surface 3a is contacted with at least the entire back side of the region where the treatment liquid is located, and supports the substrate W. : 'Subtraction: The drying device 13 is provided with a pressure reducing mechanism 40 for The decompression chamber is used to supply the gas to the mechanism 50 for supplying the processing gas to the processing chamber 2A. The decompression mechanism 40 has: as a suction:; 4 1. Field, / broadcast and ~ pump a plurality of suction pipes 4 of the extracted ambient gas, etc., etc., a plurality of suction pipes 4 or a base passage 2 to 2, and connected to the right to the closed chamber 2 The vacuum pump 4 is driven, and the suction pipe 4 is sucked into the processing chamber 2, and is exhausted by the outside of the set h. ΓΙΓ The vacuum is dried and dried, and the ambient gas of the processing chamber 2 is depressurized. The system will be able to restore the environmental gas to the large chaos of the ship in such a ship's domain, and then borrow the 气体 Ζ Ζ . . 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 七 ' ' ' ' ' ' ' ' ' ' a plurality of supply pipes 5 to the processing chamber 20, and a plurality of supply pipes 5 are also connected to the processing chamber 2 through the base body of the chamber 2 0.#神A a* ρ The hard emulsion is made of an inert gas such as nitrogen. The 'decompression drying device U is equipped with a device for controlling the wearing operation as a whole: As shown in the figure, the 诘懕 and the supply mechanism 5G are connected to the controller 6, and the movements are controlled by the control of the above-mentioned cantilever 23 and the lift (four), etc. The operation of the vacuum drying apparatus 1 a configured as described above is also described. Fig. 2 is a flow chart showing the operation of the drying apparatus h. The operation 112324.doc 1312857 is based on the processing target 4 __ At the start time of the operation, the cover 22 is raised and the chamber 2 is opened. The substrate W is completed. The substrate W does not exist in the chamber 2

至2外部之搬送機構之滑梭 製品區域,一面進入開放之 腔室2内。藉此,將成為處 处里對象之一個基板W搬入至腔 至2内。於該基板W之製品 砜〒,形成有處理液層(步驟 S 1) 〇 91 5 — 面支撐基板W端部之非製品區域The shuttle product area of the 2 external transport mechanism enters the open chamber 2 on one side. Thereby, one substrate W which is the object in the place is carried into the cavity to 2. The sulfone enthalpy of the substrate W is formed with a treatment liquid layer (step S 1) 〇 91 5 — a non-product region of the end portion of the surface supporting substrate W

其次,如圖4所示,藉由升降機構32之驅動而使升降板3 上升’且將基板w自滑梭91傳遞至升降板3。此時,升降 板3之上表面3a面接觸於未由滑梭9以禮之製品區域背面 側、,且支撐基板w(步驟S2)。若將基傳遞至升降板3, 則滑梭91將退出至腔室2外(步驟S3)。 、尺如圖5所示,藉由升降機構32之驅動,而升降板3 將下降至進行基板W之乾燥的位置。於此下降過程中以及 γ降後,基板w亦面接觸於升降板3之上表面33並由其支 撐(步驟S4)。繼而,蓋體22下降並與基座體21密著,腔室 2封閉。藉此,減壓乾燥裝置成為圖丨所示之狀態,形成 有氣密狀態之處理室2〇(步驟S5)。 其次’使處理室20内之環境氣體減壓,進行基板w上之 處理液之乾燥處理。具體而言,驅動真空泵4〗,經由抽吸 配^ 4抽吸處理室20内之環境氣體。藉此,使處理室20内 之%境氣體減愿’伴隨該環境氣體之減壓,基板W上之處 理/夜之彿點降低,處理液汽化。汽化後之處理液將經由抽 H2324.doc -12- 1312857 吸配管4向減壓乾燥裝置“之外部 α 時,為狀μ走 於進行乾燥處理 二::亡處理液之急劇汽化(滞騰)而階段 dr氣體(步驟S6)。於該乾燥處理中,支撐基板 w亦面接觸於升降板3$卜矣 合… &quot;並由其支撐。故而,不 s於基板W之製品區域之背 J形成有空間,又,亦不會 於1品區域之背面側產生氣流。 ^使處理室_之環境氣體減塵至幾乎真空則結束乾燥 ;’繼而’猎由供給機構5〇而將處理氣體供給至處理室 2〇’使處理室20之環境氣體恢復至大氣壓(步驟⑺。其 次,如圖5所示,蓋體22上升,腔室2開放(步驟叫。 一其次’藉由升降機構32之驅動’而使升降板3上升至進 订基板W之傳遞之位置。於該上升過程中以及上升後,基 板W亦面接觸於升降板3之上表面仏並由其支撐(步驟。 其次,滑梭91進入腔室2内(步驟Sl〇),如圖4所示,將 基板W自升降板3傳遞至滑梭91。進而,如圖3所示,若升 降板3下降(步驟S11),則滑梭91將退出至腔室2外,且將基 板w搬出至減壓乾燥裝置la之外部(步驟si2)。 如此般第1實施形態之減壓乾燥裝置la,於乾燥基板w 上之處理液時,以升降板3之上表面3 &amp;面接觸於至少處理 液所存在之製品區域之背面側整體並支撐(面支撐)基板 W。由此,因於基板W之製品區域之背面側未形成有空 間’故而於製品區域整體實質熱容量將變得均勻,並且亦 不會於基板W之背面側產生氣流。由此,可使基板w之製 品區域整體之溫度均勻’且可有效地防止處理液之不均。 112324.doc 1312857 減c &amp;燥裝置la中’於與滑梭9ι之間進行基板|之 傳遞時亦不點切基板w,而僅料升降板3,以其上表 面3a面接觸並支榜基板W1,同-升降板3之上表面3a 將被兼用作以下雙方’即乾燥處理液時之支撐面及傳遞基 板w時之支撐面。自此,因無須另外設置基板歡傳遞用 支撐銷等’故而可使裝置構成簡化,並且可進行穩定之基 板W之傳遞。 .右於升降板3上设置有基板w之傳遞用升降自如之 支撐:的情形時’貝,丨必須於升降板3設置用以升降該支撐 銷貝L孔若於升降板3形成有如此貫通孔,則當自升 降板之上表面3a埋沒支撐銷並乾燥基板w上之處理液 時,將於基板W之背面側產生與升降板3面接觸之部分及 未接觸之。卩刀(與藉由貫通孔而導致產生之空間接觸之部 分)。由此,有可能於該等部分之彼此間產生溫度差從而 產生處理液之不均。對此’減壓乾燥裝置1&amp;,由於無須設 置支揮銷’故而亦可有效地防止由如此支撐銷之貫通孔而 導致之處理液之不均。 &lt;2.第2實施形態&gt; 其次,說明第2實施形態。實施形態中,乾燥基板時 之支撐面與傳遞基板時之支樓面由同—構件構成,且於傳 遞基板時亦支擇製品區域之背面側整個表面。然而,近年 來,基板之尺寸趨於大型化,若僅支撐基板端部之非製品 區域則將於基板產生彎曲,故而搬送機構亦有時支撐基板 中央部附近之製品區域背面側。若為如此情形,則如第丄 112324.doc 1312857 實施形態所示,與搬送機構進行基板之傳遞時,無法支# 基板之製品區域背面側整個表面。第2實施形態之減: 燥裝置係對應於如此搬送機構者。 乙 圖6係表示第2實施形態之減塵乾燥裝置几的概略構成 圖。對與第1實施形態之減壓乾燥裝置叫目同之構成賦予 相同符號並省略詳細說明。 第2實施形態之減壓乾燥裝置lb,與第1施形態之減壓 乾燥裳ha之不同之處在於與支樓基板评之支撐面相關的 構成。更具體而言,減壓乾燥裝置比,於乾燥處理液時, 僅支撐基板w之支擇面中之一部分由升降板33構成,其他 部分由固定配置之固定板25構成。 如圖6所示,減壓乾燥裝置^具備有彼此離開配置之二個 升降板33 ^此等2個升降板33,大致水平地配置於同一高 度,且固定於可於上下方向升降之同一個升降機構Μ上。 因此,藉由升降機構34進行驅動’而2個升降板33一面維 持大致水平狀態,一面於同一方向僅升降同一移動量。 又,減壓乾燥裝置lb具備有大致水平地配置於同一高度 之3個固定板25。該等固定板25,經由螺栓等結合部件固 定於基座體21。再者,為方便說明,圖中省略結合構件之 圖示。 圖6表示2個升降板33下降至下端之狀態。若如此般升降 板33下降至下端,則該等升降板33將配置於固定板。之彼 此間。而且,2個升降板33之上表面33a與3個固定板25之 上表面25a成為同一高度,且形成一個大致水平面。本實 112324.doc -15 - 1312857 施形態中,如此般由升降板33與固定板25所構成之面,將 作為乾燥基板W時之支撐面而發揮作用。 又,若2個升降板33上升,則該等之上表面33a將自乾燥 基板W時之支撐面之位置突出,形成一個大致水平面。本 實施形態中,如此般由2個升降板33所構成之面,將作為 傳遞基板W時之支樓面而發揮作用。Next, as shown in Fig. 4, the elevating plate 3 is raised by the driving of the elevating mechanism 32, and the substrate w is transferred from the shuttle 91 to the elevating plate 3. At this time, the upper surface 3a of the elevating plate 3 is in surface contact with the back side of the product region not covered by the shuttle 9, and supports the substrate w (step S2). If the base is transferred to the lift plate 3, the shuttle 91 will exit to the outside of the chamber 2 (step S3). As shown in FIG. 5, by the driving of the lifting mechanism 32, the lifting plate 3 is lowered to a position where the substrate W is dried. During this descent and after the gamma is lowered, the substrate w is also in contact with and supported by the upper surface 33 of the elevating plate 3 (step S4). Then, the lid body 22 is lowered and adhered to the base body 21, and the chamber 2 is closed. As a result, the vacuum drying apparatus is in the state shown in Fig. ,, and the processing chamber 2 is formed in an airtight state (step S5). Next, the ambient gas in the processing chamber 20 is depressurized, and the treatment liquid on the substrate w is dried. Specifically, the vacuum pump 4 is driven to suck the ambient gas in the processing chamber 20 via the suction. As a result, the amount of gas in the processing chamber 20 is reduced. With the decompression of the ambient gas, the processing point on the substrate W is lowered, and the processing liquid is vaporized. After the vaporization, the treatment liquid will pass through the suction pipe 4 of H2324.doc -12- 1312857 to the external pressure α of the vacuum drying device, and the shape will be dried for the second treatment: the rapid vaporization of the dead liquid (stagnation) And the stage dr gas (step S6). In the drying process, the support substrate w is also in contact with the lifting plate 3 &; ... and is supported by it. Therefore, the back of the product area of the substrate W is not J Space is formed, and airflow is not generated on the back side of the product area. ^The ambient gas of the process chamber is reduced to almost vacuum to end the drying; 'then' the service gas is supplied by the supply mechanism 5〇 Returning to the processing chamber 2' to return the ambient gas of the processing chamber 20 to atmospheric pressure (step (7). Second, as shown in FIG. 5, the lid 22 is raised, and the chamber 2 is opened (step is called. Secondly) by the lifting mechanism 32 The drive plate 3 is raised to the position where the transfer substrate W is transferred. During the ascending process and after the rise, the substrate W is also in contact with and supported by the upper surface of the lift plate 3 (step. Second, the shuttle 91 enters the chamber 2 (step S1), as shown in FIG. The substrate W is transferred from the lift plate 3 to the shuttle 91. Further, as shown in Fig. 3, when the lift plate 3 is lowered (step S11), the shuttle 91 is withdrawn to the outside of the chamber 2, and the substrate w is carried out to The outside of the vacuum drying apparatus 1a (step si2). In the vacuum drying apparatus 1a of the first embodiment, when the processing liquid on the substrate w is dried, the upper surface 3 & surface of the lifting plate 3 is in contact with at least the treatment. The substrate W is integrally supported and supported (surface supported) on the back side of the product region where the liquid is present. Thereby, since the space is not formed on the back side of the product region of the substrate W, the substantial heat capacity in the entire product region becomes uniform, and Also, no airflow is generated on the back side of the substrate W. Thereby, the temperature of the entire product region of the substrate w can be made uniform, and the unevenness of the treatment liquid can be effectively prevented. 112324.doc 1312857 Subtracting c & drying device la 'When the substrate|transfer is made between the shuttle and the shuttle 9i, the substrate w is not cut, but only the lifting plate 3 is surface-contacted with the upper surface 3a and the substrate W1 is supported, and the upper surface 3a of the lift plate 3 It will be used as the support for the following two sides, ie, the drying solution The surface and the support surface when the substrate w is transferred. Since the support pin or the like for the base board is not required to be provided separately, the device configuration can be simplified, and the stable substrate W can be transferred. The right side is provided on the lift plate 3. In the case where there is a support for the transfer of the substrate w, the lifter 3 must be provided on the lift plate 3 to lift the support pin. If the hole is formed in the lift plate 3, then the lift plate is When the upper surface 3a buryes the support pin and dries the treatment liquid on the substrate w, a portion which is in surface contact with the lift plate 3 and which is not in contact with the back surface side of the substrate W is formed. The trowel (with the space caused by the through hole) Part of the contact). Thereby, there is a possibility that a temperature difference is generated between the portions to cause unevenness of the treatment liquid. In the 'decompression drying apparatus 1 &amp;, since it is not necessary to provide the support pin', it is possible to effectively prevent the unevenness of the treatment liquid caused by the through hole of the support pin. &lt;2. Second embodiment&gt; Next, a second embodiment will be described. In the embodiment, the support surface when the substrate is dried and the support surface when the substrate is transferred are composed of the same member, and the entire surface of the back side of the product region is also selected when the substrate is transferred. However, in recent years, the size of the substrate tends to increase, and if only the non-product region of the end portion of the substrate is supported, the substrate is bent. Therefore, the transfer mechanism may support the back side of the product region near the center portion of the substrate. If this is the case, as shown in the embodiment of the "112324.doc 1312857", when the substrate is transferred to the transport mechanism, the entire surface of the back side of the product region of the substrate cannot be supported. Reduction in the second embodiment: The drying device corresponds to the transfer mechanism. Fig. 6 is a schematic block diagram showing a dust collecting and drying device of the second embodiment. The same components as those of the vacuum drying apparatus of the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. The vacuum drying apparatus 1b of the second embodiment differs from the decompression drying apparatus ha of the first embodiment in the configuration of the supporting surface of the branch substrate. More specifically, in the reduced-pressure drying apparatus, only one of the support faces supporting the substrate w is constituted by the lift plate 33, and the other portion is constituted by the fixed plate 25 fixedly disposed. As shown in Fig. 6, the vacuum drying apparatus is provided with two lifting plates 33 which are disposed apart from each other, and the two lifting plates 33 are disposed substantially horizontally at the same height and are fixed to the same one which can be lifted up and down. The lifting mechanism is on the fence. Therefore, the two elevating plates 33 are maintained in a substantially horizontal state by the elevating mechanism 34, and only the same amount of movement is raised and lowered in the same direction. Further, the reduced-pressure drying device 1b is provided with three fixing plates 25 which are disposed substantially horizontally at the same height. These fixing plates 25 are fixed to the base body 21 via coupling members such as bolts. Further, for convenience of explanation, the illustration of the joint member is omitted in the drawings. Fig. 6 shows a state in which the two lift plates 33 are lowered to the lower end. If the elevating plate 33 is lowered to the lower end in this manner, the elevating plates 33 will be disposed on the fixed plate. One another. Further, the upper surface 33a of the two lift plates 33 and the upper surface 25a of the three fixed plates 25 have the same height and form a substantially horizontal plane. In the embodiment, the surface formed by the lift plate 33 and the fixed plate 25 functions as a support surface for drying the substrate W. Further, when the two lift plates 33 are raised, the upper surfaces 33a protrude from the position of the support surface when the substrate W is dried to form a substantially horizontal surface. In the present embodiment, the surface composed of the two lift plates 33 functions as a supporting floor when the substrate W is transferred.

以下,說明如此般構成之減壓乾燥裝置lb之動作。該動 作由於與圖2所不者幾乎相同,故利用該圖2進行說明。再 者’本實施形態中,亦設為於圖2之動作開始時間點,基 板W不存在於腔室2内,蓋體22上升且腔室2開放者。 首先,如圖7所示,作為腔室2外部搬送機構之機械手之 手部92’ -面支撐基板w,—面進入自與相對圖面垂直方 向相當之方向開放的腔室2内。機械手藉由其3個手部Μ, 除點支撐基板W端部之非製品區域以外,亦點支撑基板1 中央部之製品區域的背面側(步驟s i)。Hereinafter, the operation of the vacuum drying apparatus 1b configured as described above will be described. This operation is almost the same as that of Fig. 2, and therefore will be described using Fig. 2 . Further, in the present embodiment, the substrate W is not present in the chamber 2 at the start of the operation of Fig. 2, and the lid 22 is raised and the chamber 2 is opened. First, as shown in Fig. 7, the hand 92' of the manipulator, which is the external transport mechanism of the chamber 2, supports the substrate w, and the surface enters the chamber 2 which is opened in a direction corresponding to the direction perpendicular to the plane of the drawing. The robot supports the back side of the product region at the center portion of the substrate 1 by the three hand portions, in addition to the non-product region of the end portion of the support substrate W (step s i).

其次,如圖8所示,藉由升降機構34之驅動,2個升降板 33上升’錢人手部92之彼此間。而且,2個升降板似 上表面33a成為支#面,該支撑面面接觸於未由基板|之 手部92切之部分,且支絲板w。藉此,自手部Μ將基 板謂遞至升降板33,手部92退出至與相對圖面垂直方向 相當之方向(步驟S2)。 ^如圖9所示,藉由升降機仙之驅動,升降板 A 上表面33績固定板25之上表面25a成為一致高度 為。於该下降中,基板W亦面接觸於由2個升降板33之 112324.doc -16- 1312857 之機械手支撐基板w之端部以外的情形,亦可一面以面接 觸支撐基板W,一面進行接受/傳遞基板w。而且,該等2 個升降板33之上表面33a藉由下降,而與固定板25之上表 面25a—起構成乾燥基板w時之支撐面,且支撐基板w之背 面全部表面。藉此,本實施形態中,亦因於乾燥基板 之處理液時,於基板W之製品區域背面側未形成有支撐鎖 之貫通孔等空間,故而可有效地防止處理液之不均。 再者,於構成乾燥基板W時之支撐面之情形時,雖於鄰 接之升降板33與固定板25之間存在有間隙,但該間隙與支 撐銷之貫通孔等相比較微小,且由該間隙所導致之對處理 液狀態之影響為幾乎可忽視程度。尤其,若設鄰接之升降 板33與固定板25之離開為〇 mm以上!爪爪以下,則可抑制 於該等彼此間產生氣流,且幾乎不會對處理液之狀態產生 影響。再者,當將升降板33與固定板25配置為非常接近 時,為保持動作精確度,亦可進行對升降板33及固定板25 之雙方或任一方進行倒角。 又,亦可閉塞鄰接之升降板33與固定板25之間的間隙。 圖ίο及圖11係表示如此情形之減遷乾燦裝置lb之概略構成 圖。如圖10所示,於該情形時,於固定板25之下表面設置 有由樹脂等彈性材料所構成之閉塞板26。該閉塞板%係設 置為於固定板25與升降板33鄰接之位置,自固定板乃水平 也大出而且,如圖11所示,若升降板33下降至固定板 之高度,則閉塞板26閉塞固定板25與升降板33之間之空 間’且將該空間與處理室2〇内之其它空間離開。藉此,因 Ϊ I2324.doc • J8 - 1312857 上述第2實施形態之減壓乾燥裝置㈣,乾燥基板w時 之支揮面由升降板33與固定板25構成。此處,因升降板% 連接於升降機構34,另—方面固定板25較於基座體21, 故而於升降板33與固定板25存在有實質性熱容量差異,由 此嚴格地說有可能於該等彼此間產生溫度差。因此,為消 除汶等彼此間之溫度差,而可設置有溫度調整器。Next, as shown in Fig. 8, by the driving of the elevating mechanism 34, the two lifting plates 33 are raised by the 'hands 92'. Further, the two lifting plates like the upper surface 33a serve as a supporting surface which is in contact with a portion which is not cut by the hand 92 of the substrate|seat, and the branching plate w. Thereby, the substrate is transferred from the hand to the lifting plate 33, and the hand 92 is ejected to a direction which is substantially perpendicular to the plane of the drawing (step S2). As shown in Fig. 9, by the driving of the elevator, the upper surface 33a of the upper surface 33 of the lifting plate A has a uniform height of the upper surface 25a. In the lowering, the substrate W is also in contact with the end portion of the substrate w supported by the robot of 112324.doc -16 - 1312857 of the two lifting plates 33, and may be supported while supporting the substrate W while being in surface contact. Accept/transfer substrate w. Further, the upper surfaces 33a of the two lift plates 33 are lowered to form a support surface for drying the substrate w together with the upper surface 25a of the fixed plate 25, and support the entire surface of the back surface of the substrate w. As a result, in the present embodiment, when the processing liquid of the substrate is dried, a space such as a through hole for supporting the lock is not formed on the back side of the product region of the substrate W, so that unevenness of the processing liquid can be effectively prevented. Further, in the case of forming the support surface when the substrate W is dried, there is a gap between the adjacent lift plate 33 and the fixed plate 25, but the gap is relatively small compared with the through hole of the support pin, and the like. The effect of the gap on the state of the treatment liquid is almost negligible. In particular, if the adjacent elevating plate 33 and the fixing plate 25 are separated by more than 〇 mm or more! Below the claws, it is possible to suppress the generation of airflow between the claws, and it hardly affects the state of the treatment liquid. Further, when the lift plate 33 and the fixed plate 25 are disposed in close proximity, both of the lift plate 33 and the fixed plate 25 may be chamfered in order to maintain the accuracy of the operation. Further, the gap between the adjacent elevating plate 33 and the fixed plate 25 can be closed. Fig. ίο and Fig. 11 are diagrams showing the schematic configuration of the deflation drying device lb in this case. As shown in Fig. 10, in this case, a closing plate 26 made of an elastic material such as resin is provided on the lower surface of the fixing plate 25. The occlusion plate % is disposed at a position adjacent to the fixed plate 25 and the lift plate 33, and the self-fixing plate is horizontally larger. As shown in FIG. 11, if the lift plate 33 is lowered to the height of the fixed plate, the occlusion plate 26 is closed. The space between the fixed plate 25 and the lift plate 33 is closed and the space is separated from other spaces in the process chamber 2〇. In the vacuum drying apparatus (4) of the second embodiment described above, the branch surface when the substrate w is dried is constituted by the lift plate 33 and the fixed plate 25. Here, since the lift plate % is connected to the lift mechanism 34, the other side fixing plate 25 is larger than the base body 21, so there is a substantial difference in heat capacity between the lift plate 33 and the fixed plate 25, so that it is strictly possible These create a temperature difference between each other. Therefore, in order to eliminate the temperature difference between Wen and the like, a temperature adjuster may be provided.

圖12係表示此情形之減壓乾燥裝置仏之概略構成圖。如 圖12^示’該減覆乾燥裝置財,於支接升降板η之支柱 設置有具有加熱功能之溫度調整器27。該溫度調整 器27連接於控制器6,且於控制器6之控制下進行動作。 減麗乾燦裝置Μ,因升降板33與固定心相比,升降 板33之貫質性熱容量較小’故而於進行乾燥處理時,升降 板33之溫度低於固定板25之溫度若干。由此,於進行乾燥Fig. 12 is a view showing a schematic configuration of a vacuum drying apparatus in this case. As shown in Fig. 12, the temperature-reducing device 27 having a heating function is provided on the pillar of the lifting and lowering plate n. The temperature adjuster 27 is connected to the controller 6 and operates under the control of the controller 6. In the case of the decimating device, since the lifting plate 33 has a smaller heat capacity than the fixed core, the temperature of the lifting plate 33 is lower than the temperature of the fixing plate 25 when the drying process is performed. Thereby drying

處理時’以消除升降板33與固定板25之溫度差之方式,驅 動溫度調整器27加熱升降板33。 若如此’則iM肖除升降板33與固定板25之溫度差,故而 可進-步防止基板Wjl之處理液產生不均。再者,因可行 的是消除升降板33與固定板25之 Μ也丨&lt; 里士 &amp; 故而可於固定板 25側e又置有進行冷卻之冷 &quot;』肘進仃調整至固定 ,皿度之溫度調整器設置於升降板33與固定板Μ雙方。 &lt; 3 - 3 ·其他變形例&gt; 第1實施形態中,於基板歡乾燥處理中, 接觸於存在有處理 牛板面 处里,夜之1口口£域“側’但若可面接觸於 112324.doc -20- 1312857 至v °亥製βσ區域背面側整體,則亦可面接觸於較此更寬廣 區域。例如可使升降板3面接觸於基板W之整個背面並支 樓該基板W。 . 又,雖將升降板3之上表面3a單獨作為處理基板w時之 支撐面而加以利用’但亦可將其上表面3 a作為處理基板w 時之支撐面一部分。例如,與第2實施形態相同,亦可設 為如下者·升降板3之上表面3 a與其他固定配置之平板的 • 上表面起,开)成處理基板W時之支樓面,以該支禮面面 接觸於基板W之整個背面並支該撐基板w。 又,第2實施形態中,雖處理基板w時之支撐面面接觸 於基板W之整個背面並支撐該基板w,但亦可面接觸於至 少處理液所存在之製品區域背面側整體。 又,第2實施形態中,雖設置有2個升降板33,但亦可根 據基板W之尺寸等而設置3個以上升降板。 &lt;4·第3實施形態&gt; • 其次,說明第3實施形態。圖13係表示第3實施形態之減 壓乾燥裝置20 1 a之概略構成圖。該減壓乾燥裝置2〇丨&amp; ,具 有藉由於處理室220内配置有基板w之狀態下減壓處理室 220内之環境氣體,而使塗佈於基板w上之光阻液等處理 液乾燥之功能。 減壓乾燥裝置2〇1a具備形成有處理基板评之處理室22〇 之腔室202。腔室202包含可分離之基座體221與蓋體222。 基座體221固定配置,另一方面蓋體222連接於懸臂223且 可藉由懸臂223之驅動而相對於基座體221於上下方向升 112324.doc 21 1312857 降。再者,以下說明中只要未牲 木将別耠及,則將各構件之移 動作為以規定處理室220位置之固宕阳罢A 、 且&lt;固疋配置之基座體221為基 準的相對運動而加以說明。 於進行基板w之搬入及搬出時,蓋體222上升且腔室2〇2 開放。另一方面,於進行基板%之乾燥時,蓋體Μ2下降 ' ”基座體221接合,腔至202封閉。於蓋體222與基座體 221接合之部分,為確保處理室22〇之氣密性,而設置有由 石夕橡膠等構成之Ο形環224。 又,於腔室202之内部大致水平地設置有用以支撐基板 W之升降板203。升降板203固定於設置於腔室2〇2外部之 升降機構232上,且可於上下方向升降。成為減壓乾燥裝 置201a之處理對象之基板w,於其上表面形成有處理液 層,其背面侧之下表面由升降板2〇3所支撐。基板w中距 端部例如10 mm之區域為不形成製品之非製品區域,於基 板W之上表面,於包含除去該非製品區域之製品區域之區 域形成有處理液。 又’於升降板203上形成有複數個貫通孔,於該等貫通 孔分別插通有支撐銷207 ^該等支撐銷2〇7之上端部,根據 減壓乾燥裝置20 1 a之動作狀況’自升降板203之上表面 203a犬出且點接觸並支撐基板w。於升降板203之下表 面’分別對應於該等支樓銷2〇7而設置有連接構件2·70。連 接構件270成為連動構件,其將升降板203之升降運動傳送 至支撐銷207 ’且與升降板203之升降連動使支撐銷207自 上表面203a出沒。 112324.doc -22- 1312857 圖14及圖15係表示連接構件27〇之周邊構成之放大圖。 如該等圖所示,連接構件27〇之構成包括支點部π、伸縮 部272、及回動部273。支點部271由棒狀構件構成,且以 長度方向沿上下方向之方式固定設置於升降板203之下面 側。 伸縮部272係可沿上下方向伸縮其長度之構件,且構成 為於上部具備有活塞部272a,於下部具備有汽缸部272b。 汽缸部272b由圓筒構件構成’且活塞部272a可往復運動地 插通於其内部。藉由變更該活塞部272a與汽缸部272b之相 對位置關係’而可變更伸縮部272之長度。 活塞部272a ’其上部固定設置於升降板2〇3之下面侧, 並且於其周圍設置有盤簧27k。盤簧272c配置為上部接觸 於升降板203之下表面,下部接觸於汽缸部2721?之上部。 藉此’將Ά虹部272b自升降板203相對地離開且對其向下 施壓。再者,活塞部272a之下端部形成有爪部,即使使活 塞部272a與汽缸部272b相對移動至偏離方向(伸展伸縮部 272之方向),該等亦不會偏離。 又’回動部273係棒狀構件,且分別為一端部273a由伸 縮部272之汽缸部272b可旋轉地支撐,另一端部273b由支 撐鎖207之下端部可旋轉地支撐,中心部273c由支點部27 j 可旋轉地支撐。 如圖14所示’若為伸縮部272不與基座體221接觸之狀 態’則伸縮部272將藉由盤簧272c之施壓力而伸展至最 大。於該狀態下’連接於汽缸部272b之回動部273之端部 112324.doc •23- 1312857 273a,相對低於成為支點之中心部273c。又,成為如下狀 態.連接於其相反側之支撐銷2〇7之回動部273的端部 73b相對鬲於成為支點之中心部2 7 3 c,支樓銷2 〇 7之上 端部自升降板203之上表面2〇3a突出。 若自該圖14所示之狀態升降板2〇3下降,則如圖15所 不,伸縮部272之下部與基座體221接觸。藉此,與盤簧 272c之施壓力相反,汽缸部27几相對移動至升降板2〇3 側,伸縮部272之長度變短。而且,連接於汽缸部272b之 回動部273之端部273a相對高於成為支點之中心部27孔。 由此成為如下狀態:連接於其相反侧之支撐銷2〇7之回動 部273的端部273b ’相對低於成為支點之中心部273c,支 撐銷207之上端部自升降板2〇3之上表面2〇3a埋沒。 如此’若升降板203下降至連接構件270接觸到基座體 22 1為止,則其運動將經由連接構件27〇傳送至支撐銷 2〇7’支撐銷207自升降板203之上表面203a埋沒(圖15)。又 與此相反’若升降板2〇3上升至連接構件270自基座體221 離開之位置為止,則其運動將經由連接構件27〇傳送至支 標鎖207 ’支撐銷207將自升降板203之上表面203a突出(圖 1 4)。由此’將成為如下狀態:於升降板203下降之狀態 下’基板W面接觸於升降板203之上表面203a並由該上表 面203a支樓;於升降板203上升之狀態下,基板W點接觸 於支撐銷207並由該支撐銷207支撐,且自升降板203之上 表面2 0 3 a離開。 返回至圖13,減壓乾燥裝置20 1 a具備有:用以減壓處理 112324.doc -24 - 1312857 室220之環境氣體之減壓機構24〇 ;用以將處理氣體供給至 處理至220之供給機構25〇。減壓機構24〇具有:作為抽吸 裝置之真空泵241 ;用以引導抽吸之環境氣體之複數個抽 吸配管2G4。該等複數個抽吸配f取貫通腔室2()2之基座 體221,且連接於處理室22〇。若於封閉腔室2〇2之狀態下 驅動真空泵241,則將經由抽吸配管2〇4抽吸處理室22〇之 環境氣體,且向減壓乾燥裝置2()1晴部排氣。藉此,減壓 處理室220之環境氣體。 供給機構250係將如此減壓後之處理室22〇之環境氣體恢 復至大氣壓之機構,其具有:供給處理氣體之氣體供給部 1用以將處理氣體引導至處理室22〇之複數個供給配管 205。該等複數個供給配管2〇5亦貫通腔室2〇2之基座體 221,且連接於處理室22〇。處理氣體可採用氮氣等惰性氣 體。 又,減壓乾燥裝置201a具備包括用以總體上控制裝置動 作之微電腦等之控制器2〇6。如圖所示,減壓機構24〇及供 給機構250連接於控制器鳩,|該等之移#由控制器⑽ 控制。又,上述之懸臂223及升降機構232等亦連接於控制 器206且蓋體222之升降及升降板2〇3之升降亦將由控制 器206控制。 八人說明以上述方式構成之減壓乾燥裝置2〇ia之動 作。圖16係表示減壓乾燥裝置2〇la之動作流程圖。該動作 流程係根據作為處理對象之每一個基板…而完成者。設於 /動作之開始時間點,基板w不存在於腔室2〇2内,蓋體 112324.doc -25 · 1312857 222上升且腔室202開放。 首先,將成為處理對象之一個基板W搬入腔室202内。 即’如圖17所示,作為腔室202外部搬送機構之滑梭291, 一面支撐基板W端部之非製品區域一面進入開放之腔室 202内。於包含該基板w之製品區域之區域,形成有處理 液層。 而且’如圖18所示,藉由升降機構232之驅動,升降板 203上升’將基板w自滑梭291傳遞至升降板203。此時, 由於成為支擇銷207自升降板203之上表面203a突出之狀 態’故而基板W點接觸於支撐銷207並由該支撐銷207支 揮。若將基板W傳遞至升降板203,則滑梭29 1將退出至腔 室202外(步驟S21)。 其次,如圖19所示,藉由升降機構232之驅動,升降板 203下降至進行基板%乾燥之位置。若如此般升降板2〇3下 降則將成為支樓銷207自升降板203之上表面203a埋沒之 狀態。由此’基板~面接觸於升降板2〇3之上表面2〇3&amp;並 由该上表面203a支撐。此時,升降板2〇3之上表面2〇3&amp;面 接觸於基板W中至少處理液所存在之製品區域背面側整體 (步驟S22)。 繼而,蓋體222下降且與基座體221密著,腔室2〇2封 閉2藉此,減壓乾燥裝置201a成為如圖13所示之狀態,形 成氣密狀態之處理室220(步驟S23)。 其次,減壓處理室220内之環境氣體,並進行基板貿上 之處理液之乾燥處理。具體而言,驅動真空泵241,經由 U2324.doc -26- I312857 =配管2G4抽吸處理室細内之環境氣體。藉此,減壓處 至220内之環境氣體,伴隨該環境氣體之減廢,基板w 上之處理液之沸點降低’處理液逐漸汽化。汽化之處理 液、,將,經由抽口及配管204向減壓乾燥裝置2仏外部排出。 ;進仃乾燥處理時,為防止處理液之急遽汽化(沸騰),將 處理室220内之環境氣體(步驟叫階段性減壓。於該乾燥 處理中,基板w亦面接觸於升降板2〇3之上表面咖並由 該上表面2〇3a支撐。由此,不會於基板w之製品區域背面 側形成有空間,又,亦不會於製品區域之背面側產生氣 流。 若處理室220内之環境氣體幾乎減磨至真空則結束乾燥 處理而且,於維持該處理室220内之環境氣體之減壓狀 態下,如圖20所示,將升降板2〇3稍微上升至連接構件27〇 自基座體221離開之位置為止。藉此,由於支撐銷樹自升 降板203之上表面2G3a突出,故而基板W自上表面203&amp;離 開。即,乾燥後之基板|,將於處理室22〇内之環境氣體 之減壓狀態下’於進行乾燥處理時自成為支樓面之上表面 203a分離(步驟S25)。 其次,藉由供給機構250而將處理氣體供給至處理室 220使處理至220之環境氣體恢復至大氣壓(步驟S26), 並且蓋體222上升,腔室202開放(步驟S27)。 其次,藉由升降機構232之驅動,升降板2〇3進而上升至 進行基板W之傳遞之位置。於該上升過程中及上升後,基 板w亦於自升降板203之上表面2〇33離開之狀態下由支撐 H2324.doc •27- 1312857 銷207點支撐(步驟S28)。 其次,滑梭291進入腔室202内,將基板W自升降板203 傳遞至滑梭291。進而,升降板203下降之後,滑梭291退 出至腔室202外,將基板w搬出至減壓乾燥裝置201a之外 部(步驟S29)。 如此般第3實施形態之減壓乾燥裝置2〇la中,於乾燥基 板W上之處理液時,以升降板203之上表面2〇化面接觸於At the time of processing, the temperature adjuster 27 is driven to heat the lift plate 33 so as to eliminate the temperature difference between the lift plate 33 and the fixed plate 25. If so, the iM removes the temperature difference between the lift plate 33 and the fixed plate 25, so that the processing liquid of the substrate Wj1 can be prevented from being uneven. Furthermore, it is possible to eliminate the shackles of the lifting plate 33 and the fixing plate 25, and the sorrow & can be placed on the side of the fixing plate 25, and the cold cooling is performed. The temperature adjuster of the dish is disposed on both the lift plate 33 and the fixed plate. &lt; 3 - 3 · Other Modifications&gt; In the first embodiment, in the process of drying the substrate, the contact with the surface of the beef plate is present, and the mouth of the night is "side" but if it is in surface contact The entire back side of the βσ region of 112324.doc -20- 1312857 to v ° can also be in surface contact with a wider area. For example, the surface of the lifting plate 3 can be contacted with the entire back surface of the substrate W and the substrate can be supported. Further, the upper surface 3a of the elevating plate 3 is used alone as a supporting surface for processing the substrate w. However, the upper surface 3a may be used as a part of the supporting surface when the substrate w is processed. For example, 2 In the same embodiment, the upper surface 3a of the lift plate 3 and the upper surface of the other fixedly disposed flat plate may be opened to form a support floor when the substrate W is processed, and the support surface may be used. In the second embodiment, the support surface of the substrate w is in contact with the entire back surface of the substrate W and supports the substrate w, but may be in surface contact with the support substrate w. At least the entire back side of the product area where the treatment liquid is present. In the embodiment, the two lift plates 33 are provided. However, three or more lift plates may be provided depending on the size of the substrate W, etc. <4. Third embodiment> Next, a third embodiment will be described. 13 is a schematic configuration diagram of the vacuum drying apparatus 20 1 a of the third embodiment. The vacuum drying apparatus 2 〇丨 &amp; has a pressure reducing processing chamber 220 in a state in which the substrate w is disposed in the processing chamber 220. The inside of the ambient gas is used to dry the processing liquid such as the photoresist liquid applied to the substrate w. The vacuum drying apparatus 2A1a includes a chamber 202 in which the processing chamber 22 of the processing substrate is formed. The chamber 202 The detachable base body 221 and the cover body 222 are included. The base body 221 is fixedly disposed, and the cover body 222 is connected to the cantilever 223 and can be lifted up and down with respect to the base body 221 by the driving of the cantilever 223 112324. .doc 21 1312857 Descending. In addition, in the following description, as long as there is no slap in the wood, the movement of each member is taken as the base of the fixed processing chamber 220, and the pedestal is fixed. The body 221 is described as a reference relative motion. At the time of loading and unloading, the lid body 222 is raised and the chamber 2〇2 is opened. On the other hand, when the substrate % is dried, the lid body 2 is lowered and the base body 221 is joined, and the cavity 202 is closed. In the portion where the lid body 222 is joined to the base body 221, a dome ring 224 made of Shishi rubber or the like is provided to ensure the airtightness of the processing chamber 22. Further, a lifting plate 203 for supporting the substrate W is provided substantially horizontally inside the chamber 202. The elevating plate 203 is fixed to the elevating mechanism 232 provided outside the chamber 2〇2, and is movable up and down. The substrate w to be processed by the reduced-pressure drying device 201a has a processing liquid layer formed on the upper surface thereof, and the lower surface of the back surface side is supported by the lifting plate 2〇3. A region of the substrate w which is, for example, 10 mm from the end portion is a non-product region where no product is formed, and a treatment liquid is formed on the upper surface of the substrate W in a region including the product region from which the non-product region is removed. Further, a plurality of through holes are formed in the lift plate 203, and the support pins 207 are respectively inserted into the through holes, and the upper ends of the support pins 2〇7 are pressed according to the operation state of the vacuum drying device 20 1 a. The upper surface 203a of the lifting plate 203 is in dog contact and contacts the substrate w. The connecting member 2·70 is provided on the lower surface ‘ below the lifting plate 203 corresponding to the branch pins 2〇7, respectively. The connecting member 270 serves as an interlocking member that transmits the lifting motion of the lifting plate 203 to the supporting pin 207' and interlocks with the lifting of the lifting plate 203 to cause the supporting pin 207 to exit from the upper surface 203a. 112324.doc -22- 1312857 FIGS. 14 and 15 are enlarged views showing the configuration of the periphery of the connecting member 27A. As shown in the figures, the structure of the connecting member 27 includes a fulcrum portion π, an expansion and contraction portion 272, and a returning portion 273. The fulcrum portion 271 is formed of a rod-shaped member and is fixedly disposed on the lower surface side of the elevating plate 203 so as to extend in the longitudinal direction in the longitudinal direction. The expansion/contraction portion 272 is a member that can expand and contract its length in the vertical direction, and is configured to include a piston portion 272a at the upper portion and a cylinder portion 272b at the lower portion. The cylinder portion 272b is constituted by a cylindrical member' and the piston portion 272a is reciprocally inserted into the inside thereof. The length of the stretchable portion 272 can be changed by changing the relative positional relationship between the piston portion 272a and the cylinder portion 272b. The piston portion 272a' is fixedly disposed on the lower side of the lift plate 2〇3, and a coil spring 27k is disposed around the piston plate 272a'. The coil spring 272c is disposed such that an upper portion contacts a lower surface of the lift plate 203, and a lower portion contacts an upper portion of the cylinder portion 2721. Thereby, the Ά rainbow portion 272b is relatively separated from the lift plate 203 and pressed downward. Further, the lower end portion of the piston portion 272a is formed with a claw portion, and even if the piston portion 272a and the cylinder portion 272b are relatively moved to the deviation direction (the direction in which the expansion-contraction portion 272 is extended), the same does not deviate. Further, the 'return portion 273 is a rod-shaped member, and the one end portion 273a is rotatably supported by the cylinder portion 272b of the expansion and contraction portion 272, and the other end portion 273b is rotatably supported by the lower end portion of the support lock 207, and the center portion 273c is The fulcrum portion 27 j is rotatably supported. As shown in Fig. 14, if the expansion/contraction portion 272 is not in contact with the base body 221, the expansion and contraction portion 272 is extended to the maximum by the pressing force of the coil spring 272c. In this state, the end portion 112324.doc • 23-1312857 273a connected to the return portion 273 of the cylinder portion 272b is relatively lower than the center portion 273c which becomes the fulcrum. Further, the end portion 73b of the returning portion 273 of the support pin 2〇7 connected to the opposite side is opposite to the center portion 2 7 3 c which becomes the fulcrum, and the upper end portion of the branch pin 2 〇7 is lifted and lowered. The upper surface 2〇3a of the plate 203 protrudes. When the elevating plate 2 is lowered from the state shown in Fig. 14, the lower portion of the elastic portion 272 is in contact with the base body 221 as shown in Fig. 15 . Thereby, contrary to the pressing force of the coil spring 272c, the cylinder portion 27 is relatively moved to the side of the lift plate 2〇3, and the length of the stretchable portion 272 is shortened. Further, the end portion 273a of the returning portion 273 connected to the cylinder portion 272b is relatively higher than the center portion 27 of the fulcrum. Thus, the end portion 273b' of the return portion 273 of the support pin 2〇7 connected to the opposite side thereof is relatively lower than the center portion 273c which becomes the fulcrum, and the upper end portion of the support pin 207 is lifted from the lift plate 2〇3 The upper surface 2〇3a is buried. Thus, if the elevating plate 203 is lowered until the connecting member 270 contacts the base body 22 1 , its movement will be transmitted to the support pin 2 〇 7 ′ via the connecting member 27 ' the support pin 207 is buried from the upper surface 203 a of the elevating plate 203 ( Figure 15). In contrast, if the lift plate 2〇3 rises to a position where the connecting member 270 is separated from the base body 221, its movement will be transmitted to the branch lock 207 via the connecting member 27'. The support pin 207 will be lifted from the lift plate 203. The upper surface 203a protrudes (Fig. 14). Thus, the state will be such that the substrate W is in contact with the upper surface 203a of the lift plate 203 and is supported by the upper surface 203a in a state where the lift plate 203 is lowered; and the substrate W is raised in a state where the lift plate 203 is raised. It is in contact with and supported by the support pin 207, and is separated from the upper surface of the lift plate 203 by 2 0 3 a. Returning to Fig. 13, the vacuum drying apparatus 20 1 a is provided with: a pressure reducing mechanism 24 环境 for decompressing the ambient gas of the chamber 112324.doc -24 - 1312857 220; for supplying the processing gas to the processing to 220 The supply mechanism is 25〇. The pressure reducing mechanism 24A has a vacuum pump 241 as a suction device, and a plurality of suction pipes 2G4 for guiding the suctioned ambient gas. The plurality of suction devices f are taken through the base body 221 of the chamber 2 () 2 and connected to the processing chamber 22A. When the vacuum pump 241 is driven in a state in which the chamber 2 is closed, the ambient gas in the processing chamber 22 is sucked through the suction pipe 2〇4, and is exhausted to the dry portion of the vacuum drying device 2 (). Thereby, the ambient gas of the treatment chamber 220 is decompressed. The supply mechanism 250 is a mechanism for returning the ambient gas in the processing chamber 22 after the pressure reduction to atmospheric pressure, and has a plurality of supply pipes for supplying the processing gas to the processing chamber 22 by the gas supply unit 1 for supplying the processing gas. 205. The plurality of supply pipes 2〇5 also pass through the base body 221 of the chamber 2〇2 and are connected to the processing chamber 22〇. The treatment gas may be an inert gas such as nitrogen. Further, the decompression drying apparatus 201a is provided with a controller 2?6 including a microcomputer or the like for controlling the operation of the apparatus as a whole. As shown, the pressure relief mechanism 24 and the supply mechanism 250 are coupled to the controller 鸠, which are controlled by the controller (10). Further, the above-mentioned cantilever 223, lifting mechanism 232, and the like are also connected to the controller 206, and the lifting of the lid 222 and the lifting and lowering of the lifting plate 2〇3 are also controlled by the controller 206. Eight people explained the action of the vacuum drying device 2〇ia constructed in the above manner. Fig. 16 is a flow chart showing the operation of the vacuum drying apparatus 2〇la. This action flow is completed based on each of the substrates to be processed. At the start time of the /action, the substrate w does not exist in the chamber 2〇2, the cover 112324.doc -25 · 1312857 222 rises and the chamber 202 is open. First, one of the substrates W to be processed is carried into the chamber 202. That is, as shown in Fig. 17, the shuttle 291 as the external transport mechanism of the chamber 202 enters the open chamber 202 while supporting the non-product region of the end portion of the substrate W. A treatment liquid layer is formed in a region including the product region of the substrate w. Further, as shown in Fig. 18, the elevating plate 203 is raised by the driving of the elevating mechanism 232, and the substrate w is transferred from the shuttle 291 to the elevating plate 203. At this time, since the support pin 207 protrudes from the upper surface 203a of the lift plate 203, the substrate W is in contact with and supported by the support pin 207. When the substrate W is transferred to the lift plate 203, the shuttle 29 1 will be withdrawn to the outside of the chamber 202 (step S21). Next, as shown in Fig. 19, by the driving of the elevating mechanism 232, the elevating plate 203 is lowered to a position where the substrate % is dried. If the lifting plate 2〇3 is lowered as such, it will become a state in which the branch pin 207 is buried from the upper surface 203a of the lifting plate 203. Thereby, the substrate-surface is in contact with the upper surface 2〇3&amp; of the lift plate 2〇3 and supported by the upper surface 203a. At this time, the upper surface 2〇3&amp; surface of the elevating plate 2〇3 is in contact with the entire back surface side of the product region where the processing liquid exists in the substrate W (step S22). Then, the lid body 222 is lowered and adhered to the base body 221, and the chamber 2〇2 is closed. Thereby, the vacuum drying apparatus 201a is in a state as shown in FIG. 13, and the processing chamber 220 in an airtight state is formed (step S23). ). Next, the ambient gas in the treatment chamber 220 is depressurized, and the treatment liquid on the substrate is dried. Specifically, the vacuum pump 241 is driven to suck the ambient gas in the chamber of the chamber via U2324.doc -26-I312857 = piping 2G4. Thereby, the ambient gas in the decompression to 220 is accompanied by the reduction of the ambient gas, and the boiling point of the treatment liquid on the substrate w is lowered, and the treatment liquid is gradually vaporized. The vaporized treatment liquid is discharged to the outside of the vacuum drying apparatus 2 via the suction port and the pipe 204. In order to prevent rapid vaporization (boiling) of the treatment liquid during the drying treatment, the ambient gas in the treatment chamber 220 is used (the step is called stepwise decompression. In the drying treatment, the substrate w is also in contact with the lifting plate 2〇) The upper surface of the surface is supported by the upper surface 2〇3a. Thereby, no space is formed on the back side of the product area of the substrate w, and airflow is not generated on the back side of the product area. When the ambient gas is almost reduced to a vacuum, the drying process is terminated. Further, while the ambient gas in the process chamber 220 is maintained under reduced pressure, as shown in FIG. 20, the lift plate 2〇3 is slightly raised to the connecting member 27〇. Since the support pin tree protrudes from the upper surface 2G3a of the lift plate 203, the substrate W is separated from the upper surface 203 &amp; that is, the dried substrate | will be processed in the chamber 22 In the decompressed state of the ambient gas in the crucible, the surface is separated from the upper surface 203a of the support floor during the drying process (step S25). Next, the processing gas is supplied to the processing chamber 220 by the supply mechanism 250 to be processed to 220 The gas returns to atmospheric pressure (step S26), and the lid 222 rises and the chamber 202 is opened (step S27). Next, by the driving of the lifting mechanism 232, the lifting plate 2〇3 is further raised to the position where the substrate W is transferred. During the ascending process and after the rise, the substrate w is also supported by the support H2324.doc • 27-1312857 pin 207 in a state of being separated from the upper surface 2〇33 of the lift plate 203 (step S28). 291 enters the chamber 202, and transfers the substrate W from the lift plate 203 to the shuttle 291. Further, after the lift plate 203 is lowered, the shuttle 291 is withdrawn to the outside of the chamber 202, and the substrate w is carried out to the outside of the vacuum drying device 201a. (Step S29) In the vacuum drying apparatus 2A of the third embodiment, when the processing liquid on the substrate W is dried, the surface of the upper surface of the lifting plate 203 is contacted with the surface.

至少處理液所存在之製品區域背面側整體並支撐(面支樓) 基板W。由此,因不會於基板w之製品區域背面側形成有 空間,故而於製品區域整體實質性熱容量將變得均勻,並 且亦不會於基板W之背面側產生氣流。由此,可使基板w 之製品區域整體之溫度均勻,可有效地防止處理液之不 均。 ™难荷匙理室220之環境氣 而且,於乾燥處理之後 體之減壓狀態,一面將基板评自作為支撐面之升降板2〇3 之上表面203a離開。通常,若使基板w與支擇面面接觸, 則藉由基板w上表面側之環境氣體之氣壓與基板w及支撐 面之間的氣壓(實質0)的氣壓差,而產生將基㈣㈣至支 撐面之力。…若不減壓基板…上表面側之環境氣體, 而使面接觸之基板W與支樓面離開,則將於基板w與支撐 面產生摩擦’由該摩擦導致產生摩擦帶電q目對於此,= 本實施形態之減壓乾燥裝置2〇。般,若於處理室220之〆 境氣體之減隸態下,使基板w自支撐面離開,則因基: W上表面側之環境氣體之壓力^,故而可防止產生基板 U2324.doc -28 - 1312857 w與支撐面之摩擦。由卜, 美板w性疏 有效地防止由自支撐面離開 土板w夺之摩擦而導致之摩擦帶電。再者, # JLjC W rti 4- 4Λ· 雖亦藉由離開 基板W與支撐面而產生剝 电1 一忒剝離帶電因依存 不同之2種物質故而不變。 、 又’藉由支禮銷2G7而以點接觸支擇自支撐面離開之美 板W,於該點支撐之狀態下實現與搬送機構之間之基板ς 的傳遞。即’因於基板^傳遞中,未進行自面支樓狀態 下使基板W離開之移動,故而不會產生帶電。 又產生於基板w與支禮面之帶電中,除有上述摩擦帶電 之外’亦有由基板W及支撐面之材質而導致僅因接觸所產 生之月f電即接觸帶電。《防止因如此般接觸冑電而導致破 壞7C件,可於構成基板冒之支撐面之升降板2〇3表面,塗 層例如由A fl ο n (日本國註冊商標)等氟樹脂等所構成之絕緣 物質。藉此,因支撐面由絕緣物質構成,故而即使產生作 為接觸帶電之靜電亦將蓄積於支撐面。於該支撐面接地之 前’若可用電離器等除電裝置除電,則可防止破壞元件。 又與此相反,亦可於升降板203表面塗層導體物質,進而 使升降板203接地。導體物質可採用例如,於Aflon(日本國 註冊商標)等氟樹脂中混入有金屬微粒子者等。藉此,因 支撐面由導體物質構成且接地’故即使於支標面產生靜 電’亦可積極地釋放該靜電。由此,於此情形時,於支撐 面將無靜電之蓄積,可有效地防止破壞元件。 &lt;5·第4實施形態〉 其次’說明第4實施形態。圖21係表示第4實施形態之減 112324.doc -29- 1312857 壓乾燥裝置2〇lb之概略構成圖。對與&amp;實施形態之減壓 乾燥裝置20U之相同構成,賦予同—符號並省略詳細說 明。第3實施形態中,採用連接構件…以使支撐銷2〇7自 升降板203之上表面2〇3a出沒。相對於此,第4實施形態之 減壓乾燥裝置201b ’設置有用以使支撐銷274升降之專用 升降機構275。 士圖21所示,減壓乾燥裝置2〇丨b具備複數個支撐銷2 用以貫通升降板203及基座體221之雙方。而且,分別對應 於各個該支撐銷274,將專用升降機構275設置於腔室2〇2 外部’且設為可各自獨立地升降。 於该減壓乾燥裝置201b之動作中,支撐銷274,以與升 降板203之上表面203a之相對位置關係成為與第3實施形態 相同之方式,控制該升降動作。由此,該減壓乾燥裝置 2011)中,於基板^^之乾燥時,支撐銷274自升降板2〇3之上 表面203&amp;埋/又,且以作為支撐面之上表面2〇3a面接觸並支 撐基板W。繼而,於該乾燥處理之後,以一面維持減壓狀 態一面支撐銷274自升降板203之上表面2〇3&amp;突出之方式上 升,且使基板W自支撐面離開。由此,於該第4實施形態 中’亦可防止使基板W自支撐面離開時之帶電。 其中,該第4實施形態中,因必須專用升降機構275,及 必須設置有氣密構件276等用以防止於該等升降機構275周 邊之空氣洩漏,故而較之第3實施形態,裝置構造變得複 雜。又,亦必須對升降機構275進行單獨之動作控制。故 而,較理想的是可設置有如第3實施形態般之連接構件 112324.doc -30- 1312857 2 70使裝置構成及動作控制簡單。 &lt;6·第5實施形態&gt; 態。圖22係表示第5實施形態之減 [乾無裝置鳥之概略構成圖。對與第3實施形態之減屬 乾燥裝置同—之構成中,賦予同一符號並省略詳細說 明。第5實施形態之減壓乾燥裝置2〇ic設為如下者·支標 銷277固定配置,藉由升降板2〇3之上下移動,而使支撐銷 277之上端部自升降板2〇3之上表面2〇仏出沒。 如圖22所示,減壓乾燥裳置⑽係支撐銷π分別插通 於升降板203之貫通孔中,該等支㈣277固定於腔室2〇2 之基座體221上。因基座體221係用以規定處理室22〇之位 置者,故而亦可說支撐銷277相對性固定於處理室22〇。 又升降板203 ’與第3貫施形態相同,可相對於基座體 22 1(處理室220)進行相對性升降。 於如圖22所示之狀態下,支撐銷277上端部自升降板2〇3 之上表面203a埋沒。而且,若自該狀態使升降板2〇3下 降,則圖23所示,支撑銷277上端部將相對於升降板2〇3相 對性上升’且自升降板203之上表面2〇3a突出。藉此,成 為如下狀態:於升降板203上升之狀態下,基板w面接觸 於升降板203之上表面203a並由該上表面203a支撐,但於 升降板203下降之狀態下’基板w將成為點接觸於支撐銷 207並由该支禮銷207支樓,且自升降板203之上表面203a 離開。 於該減壓乾燥裝置2 0 1 c中,於圖2 2所示之狀態下,進行 112324.doc -31 - 1312857 基板w之乾燥處理。由此,支撐銷277自升降板2〇3之上表 面203a埋沒’且以作為支撐面之上表面2〇3&amp;面接觸並支撐 基板W。繼而,該乾燥處理之後,一面維持減壓狀態一面 如圖23所示使升降板2〇3下降。藉此,支撐銷277自升降板 203之上表面203a突出,使基板W自支撐面離開。故而, 於該第5實施形態中,亦可防止使基板w自支撐面離開時 之帶電。 §亥第5實施形態中,因支撐銷277固定配置,藉由升降板 203之升降而使支撐銷277相對於支撐面出沒,故而無須用於 支撐銷277之專用升降機構等,可使裝置構成非常簡單。 &lt;7.第6實施形態&gt; 其次,說明第6實施形態。上述第3至第5實施形態中, 於與搬送機構之間傳遞基板時,以一個升降板支撐基板。 然而,近年來,由於基板之尺寸大型化,且若僅支撐基板 端部之非製品區域則基板將會產生彎曲,故而亦有時搬送 機構支撐基板中央部附近之製品區域背面側。如此情形 時,於與搬送機構之間傳遞基板時,無法以一個升降板支 撐基板。第6實施形態之減壓乾燥裝置係應對如此搬送機 構者。 圖24係表不第6實施形態之減壓乾燥裝置2〇ld之概略構 成圖。對與第3實施形態之減壓乾燥裝置201a同一之構 成’賦予相同符號並省略詳細說明。 第6實施形態之減壓乾燥裝置2〇ld,與第3實施形態之減 壓乾燥裝置20 la之不同之處在於,關於支撐基板w之支撐 112324.doc -32- 1312857 面之構成者。更具體而言,減壓乾燥裝置20 Id中,僅於乾 燥處理液時支撐基板W之支撐面中之一部分由升降板23 3 構成’其他部分由固定配置之固定板225構成。 如圖24所示,減壓乾燥裝置201d具備有彼此離開配置之 2個升降板233。該等2個升降板233大致水平地配置於同一 兩度’且固定於可於上下方向升降之同一升降機構23 4 上。由此’藉由驅動升降機構234,而使2個升降板233 — 面維持大致水平狀態一面於同一方向僅升降相同移動量。 又’減壓乾燥裝置201 d具備有大致水平地配置於同一高 度之3個固定板225。該等固定板225經由螺栓等結合構件 固定於基座體221。再者,為方便說明,圖中省略結合構 件之圖示。 圖24表示2個升降板23 3下降至下端之狀態。若如此般升 降板233下降至下端’則該等升降板233將配置於固定板 225之彼此間。而且’ 2個升降板233之上表面233a與3個固 定板225之上表面225a將成為同一高度,且形成一個大致 水平面。本實施形態中,如此般由升降板23 3與固定板22 5 所構成之面,將作為乾燥基板W時之支樓面而發揮作用。 又,於2個升降板233分別形成有貫通孔,於該等貫通孔 中分別插通有支撐銷207。而且,於升降板23 3之下表面, 於每個該等支撐銷207上設置有連接構件270。該連接構件 270之構造與弟3實施形態相同。由此,如圖24所示,於升 降板233下降之狀態下’雖支撐銷2〇7自升降板23 3之上表 面233a埋沒’但若升降板233上升,則支撐銷207將自升降 112324.doc •33- 1312857 板233之上表面233a突出。 以下’說明如此般構成之減壓乾燥裝置2〇丨d之動作。兮 動作’因與圖16所示者.大致相同’故而利用該圖16進行說 明。再者,本實施形態中’亦設為於圖16之動作開始時間 點,基板W不存在於腔室202内,蓋體222上升且腔室2〇2 開放。 首先’將成為處理對象之一個基板W搬入至腔室2〇2 内。即,如圖25所示,作為腔室2〇2外部搬送機構之機械 手之手部292,一面支撐基板w—面進入自與相對於圖面 垂直方向相當之方向開放之腔室202内。機械手藉由該3個 手部292,而除點支撐基板冒端部之非製品區域之外,亦 點支撐基板W中央部之製品區域背面側。 其次,如圖26所示,藉由升降機構234之驅動而使2個升 降板233上升,且進入手部292之彼此間。此時,成為支撐 銷207自升降板233之上表面233a突出之狀態。故而支撐銷 207點接觸於基板W之未由手部292支撐之部分並支撐基板 W。藉此,將基板|自手部292傳遞至升降板233,且手部 292退出至與相對於圖面垂直方向相當之方向(步驟“I)。 其次,藉由升降機構234之驅動,而使2個升降板233下 降至上表面233a與固定板225之上表面225a之高度一致為 止。若如此般升降板233下降,則將成為支撐銷2〇7自升降 板233之上表面233a埋沒之狀態。而且,升降板233之上表 面233a與固定板225之上表面225a,形成一個支撐基板w 之支撐面。由此,升降板233下降後,該支撐面233a、 112324.doc -34- 1312857 225a面接觸於基板w之整個下面,且大致水平地支樓基板 W。 繼而,蓋體222下降並與基座體221密著,腔室2〇2封 閉。藉此’減壓乾燥裝置201d成為如圖24所示之狀態,形 成有氣密狀態之處理室220(步驟S23)»其次,將處理室 220内之環境氣體減壓,進行基板w上之處理液之乾燥處 理。於該乾燥處理中,基板W亦面接觸於支撐面233a、 225a並由該等支撐面支撐(步驟S24)。 乾燥處理結束後’維持處理室22〇内之環境氣體之減壓 狀態,如圖27所示,升降板233耥微上升至連接構件27〇自 基座體221離開之位置。藉此,因支撐銷2〇7自升降板233 之上表面233a突出’故而基板貨自上表面233a離開(步驟 S25)。藉此,於該第6實施形態中,亦防止使基板w自支 撐面離開時之帶電。 其次,將處理氣體供給至處理室220,使處理室220之環 境氣體恢復至大氣壓(步驟S26),並且蓋體222上升,腔室 202開放(步驟S27)。 其次,2個升降板233上升至進行基板貿傳遞之位置為 止。於該上升過程中及上升後’基板w於自升降板233之 上表面233a離開之狀態下藉由支撐銷2〇7而點支撐(步驟 S28)。 其次,手部292進入腔室202内,將基板|自升降板233 傳遞至手部292。進而,升降板233下降後,手部292退出 至腔室202外,將基板貿搬出至減壓乾燥裝皇2〇ld之外部 112324.doc -35- 1312857 (步驟S29)。 如此般於第6實施形態中,因於點支撐之狀態下實現與 搬送機構之間之基板W的傳遞,故而不會於基板w之傳遞 中產生帶電。再者,該第6實施形態中,為防止因接觸帶 電而導致元件破壞’亦可於構成基板W支撐面之升降板 233及固定板225之表面塗層絕緣物質,或者,塗層導體物 質並接地。At least the back side of the product region where the treatment liquid is present is integral and supports the (surface support) substrate W. Thereby, since a space is not formed on the back side of the product region of the substrate w, the substantial heat capacity of the entire product region is uniform, and no air flow is generated on the back side of the substrate W. Thereby, the temperature of the entire product region of the substrate w can be made uniform, and the unevenness of the treatment liquid can be effectively prevented. The ambient gas of the TM hard-working chamber 220 is further separated from the upper surface 203a of the lift plate 2〇3 as a support surface after the drying process. Generally, when the substrate w is brought into contact with the surface of the support surface, the base (4) (4) is generated by the difference in air pressure between the gas pressure of the ambient gas on the upper surface side of the substrate w and the gas pressure (substantially 0) between the substrate w and the support surface. The force of the support surface. If the substrate W on the upper surface side is not decompressed, and the substrate W that is in surface contact is separated from the support surface, friction will be generated between the substrate w and the support surface, and frictional charging occurs due to the friction. = Vacuum drying apparatus 2 of the present embodiment. Generally, if the substrate w is separated from the support surface in the reduced state of the atmosphere in the processing chamber 220, the substrate: the pressure of the ambient gas on the upper surface side of the substrate ^, thereby preventing the substrate U2324.doc -28 from being generated. - 1312857 w friction with the support surface. From the cloth, the US plate w is sparsely and effectively prevents the frictional electrification caused by the friction of the self-supporting surface leaving the earth plate. Furthermore, # JLjC W rti 4- 4Λ·Also causes stripping by leaving the substrate W and the supporting surface. 1 The stripping electrification does not change depending on the two kinds of substances depending on each other. Further, by means of the gift 2G7, the sheet W which is separated from the support surface by the point contact is used, and the transfer of the substrate 与 between the transfer mechanism and the conveyance mechanism is realized in the state of being supported by the point. That is, since the substrate W is not moved in the state of the self-supporting floor during the transfer of the substrate, the charging does not occur. Further, in the charging of the substrate w and the ruling surface, in addition to the above-described frictional charging, the material of the substrate W and the supporting surface is also used, and the contact f is generated only by the contact f generated by the contact. "Preventing the damage of the 7C piece due to such contact with the electric power, it is possible to form the surface of the elevating plate 2〇3 which constitutes the support surface of the substrate, and the coating layer is composed of, for example, a fluororesin such as A fl ο n (registered trademark of Japan). Insulation. Thereby, since the support surface is made of an insulating material, even if static electricity is generated as a contact charge, it is accumulated on the support surface. Before the support surface is grounded, if the static elimination device such as an ionizer is used, the component can be prevented from being destroyed. On the contrary, the conductor material can be coated on the surface of the lifting plate 203, and the lifting plate 203 can be grounded. For the conductor material, for example, a metal fine particle mixed with a fluororesin such as Aflon (registered trademark of Japan) can be used. Thereby, since the support surface is made of a conductor material and grounded, the static electricity can be actively released even if static electricity is generated on the surface of the support. Therefore, in this case, static electricity is accumulated on the support surface, and the destruction of the element can be effectively prevented. &lt;5. Fourth Embodiment Next, the fourth embodiment will be described. Fig. 21 is a view showing a schematic configuration of a pressure drying apparatus 2〇1b of the fourth embodiment minus 112324.doc -29-1312857. The same components as those of the decompression drying apparatus 20U of the embodiment are given the same reference numerals and the detailed description is omitted. In the third embodiment, the connecting member is used to cause the support pin 2〇7 to be ejected from the upper surface 2〇3a of the lift plate 203. On the other hand, the decompression drying apparatus 201b' of the fourth embodiment is provided with a dedicated lifting mechanism 275 for lifting and lowering the support pin 274. As shown in FIG. 21, the vacuum drying apparatus 2〇丨b has a plurality of support pins 2 for penetrating both the lift plate 203 and the base body 221. Further, corresponding to each of the support pins 274, the dedicated elevating mechanism 275 is disposed outside the chamber 2〇2 and is configured to be independently movable up and down. In the operation of the vacuum drying apparatus 201b, the support pin 274 is controlled in the same manner as in the third embodiment in the relative positional relationship with the upper surface 203a of the elevation plate 203. Therefore, in the vacuum drying apparatus 2011), when the substrate is dried, the support pin 274 is buried from the upper surface 203 of the lift plate 2〇3, and serves as the upper surface of the support surface 2〇3a. Contact and support the substrate W. Then, after the drying treatment, the support pin 274 is lifted from the upper surface 2〇3&amp; of the lift plate 203 while maintaining the pressure-reduced state, and the substrate W is separated from the support surface. Therefore, in the fourth embodiment, it is also possible to prevent charging of the substrate W when it is separated from the support surface. In the fourth embodiment, since the dedicated lifting mechanism 275 is required, and the airtight member 276 or the like is required to prevent air leakage around the lifting mechanism 275, the device configuration is changed as compared with the third embodiment. It’s complicated. Further, it is necessary to perform separate operation control of the elevating mechanism 275. Therefore, it is preferable that the connecting member 112324.doc -30- 1312857 2 70 as in the third embodiment can be provided to simplify the device configuration and operation control. &lt;6. Fifth embodiment&gt; Fig. 22 is a view showing a schematic configuration of a bird without a device in the fifth embodiment. In the configuration of the third embodiment, the same reference numerals will be given to the same components, and the detailed description will be omitted. The vacuum drying apparatus 2 of the fifth embodiment is configured such that the branch pin 277 is fixedly disposed, and the upper end portion of the support pin 277 is lifted from the lift plate 2〇3 by the upper and lower movements of the lift plate 2〇3. The upper surface 2 is infested. As shown in Fig. 22, the decompression drying skirt (10) support pins π are respectively inserted into the through holes of the lift plate 203, and the branches (4) 277 are fixed to the base body 221 of the chamber 2〇2. Since the base body 221 is used to define the position of the processing chamber 22, it can be said that the support pin 277 is relatively fixed to the processing chamber 22A. Further, the lifting plate 203' can be relatively lifted and lowered with respect to the base body 22 1 (processing chamber 220) in the same manner as the third embodiment. In the state shown in Fig. 22, the upper end portion of the support pin 277 is buried from the upper surface 203a of the lift plate 2〇3. Further, when the elevating plate 2〇3 is lowered from this state, as shown in Fig. 23, the upper end portion of the support pin 277 is relatively raised with respect to the elevating plate 2〇3 and protrudes from the upper surface 2〇3a of the elevating plate 203. In this state, the substrate w is in contact with the upper surface 203a of the lift plate 203 and supported by the upper surface 203a in a state where the lift plate 203 is raised. However, in a state where the lift plate 203 is lowered, the substrate w will become The point contacts the support pin 207 and is branched by the gift pin 207, and is separated from the upper surface 203a of the lift plate 203. In the vacuum drying apparatus 2 0 1 c, in the state shown in Fig. 22, drying treatment of 112324.doc -31 - 1312857 substrate w is performed. Thereby, the support pin 277 is buried from the upper surface 203a of the lift plate 2〇3 and is in surface contact with the surface 2〇3& as the support surface and supports the substrate W. Then, after the drying treatment, the elevating plate 2〇3 is lowered as shown in Fig. 23 while maintaining the decompressed state. Thereby, the support pin 277 protrudes from the upper surface 203a of the lift plate 203, and the substrate W is separated from the support surface. Therefore, in the fifth embodiment, it is possible to prevent charging of the substrate w when it is separated from the support surface. In the fifth embodiment, the support pin 277 is fixedly disposed, and the support pin 277 is ejected with respect to the support surface by the elevation of the lift plate 203. Therefore, the device does not need to be used for supporting the pin 277. very simple. &lt;7. Sixth embodiment&gt; Next, a sixth embodiment will be described. In the third to fifth embodiments described above, when the substrate is transferred between the transfer mechanism and the substrate, the substrate is supported by one lift plate. However, in recent years, since the size of the substrate has increased, and the substrate is bent only when the non-product region of the end portion of the substrate is supported, the transfer mechanism may support the back surface side of the product region near the center portion of the substrate. In this case, when the substrate is transferred between the transfer mechanism and the substrate, the substrate cannot be supported by one lift plate. The vacuum drying apparatus of the sixth embodiment is suitable for the person to be transported as described above. Fig. 24 is a view showing a schematic configuration of the vacuum drying apparatus 2〇ld of the sixth embodiment. The same components as those of the vacuum drying apparatus 201a of the third embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. The vacuum drying apparatus 2〇ld of the sixth embodiment differs from the pressure-reducing drying apparatus 20la of the third embodiment in that it supports the support of the support substrate w to the surface of the support 112324.doc - 32 - 1312857. More specifically, in the vacuum drying apparatus 20 Id, only one of the support surfaces of the support substrate W is constituted by the lift plate 23 3 only when the treatment liquid is dried, and the other portion is constituted by the fixed plate 225 which is fixedly disposed. As shown in Fig. 24, the reduced-pressure drying device 201d is provided with two lifting plates 233 which are disposed apart from each other. The two lifting plates 233 are disposed substantially horizontally at the same two degrees and are fixed to the same lifting mechanism 23 4 that can be raised and lowered in the vertical direction. Thus, by driving the elevating mechanism 234, the two elevating plates 233 are maintained in a substantially horizontal state while raising and lowering the same amount of movement in the same direction. Further, the vacuum drying apparatus 201 d is provided with three fixing plates 225 which are disposed substantially horizontally at the same height. These fixing plates 225 are fixed to the base body 221 via a coupling member such as a bolt. Further, for convenience of explanation, the illustration of the bonding members is omitted in the drawings. Fig. 24 shows a state in which the two lift plates 23 3 are lowered to the lower end. If the lifting plate 233 is lowered to the lower end as such, the lifting plates 233 will be disposed between the fixing plates 225. Further, the upper surface 233a of the two lifting plates 233 and the upper surface 225a of the three fixing plates 225 will have the same height and form a substantially horizontal plane. In the present embodiment, the surface formed by the lift plate 23 3 and the fixed plate 22 5 functions as a support floor when the substrate W is dried. Further, through holes are formed in each of the two lift plates 233, and support pins 207 are inserted into the through holes. Further, on the lower surface of the lift plate 23 3 , a connecting member 270 is provided on each of the support pins 207 . The structure of the connecting member 270 is the same as that of the third embodiment. Thereby, as shown in FIG. 24, in a state where the elevating plate 233 is lowered, the support pin 2〇7 is buried from the upper surface 233a of the elevating plate 23 3, but if the elevating plate 233 is raised, the support pin 207 will be lifted and lowered 112324. .doc • 33- 1312857 The upper surface 233a of the plate 233 protrudes. Hereinafter, the operation of the vacuum drying apparatus 2〇丨d configured as described above will be described. The 动作 operation 'is substantially the same as that shown in Fig. 16', and is explained using Fig. 16 . Further, in the present embodiment, 'the same time as the operation start time point of Fig. 16, the substrate W does not exist in the chamber 202, the lid body 222 rises, and the chamber 2〇2 is opened. First, one of the substrates W to be processed is carried into the chamber 2〇2. That is, as shown in Fig. 25, the hand 292 of the manipulator, which is the external transport mechanism of the chamber 2〇2, enters the chamber 202 which is open from the direction corresponding to the direction perpendicular to the plane of the support substrate w-plane. The robot uses the three hand portions 292 to support the back side of the product region at the center portion of the substrate W in addition to the non-product region of the support substrate. Next, as shown in Fig. 26, the two lift plates 233 are raised by the driving of the elevating mechanism 234, and enter the hands 292. At this time, the support pin 207 protrudes from the upper surface 233a of the lift plate 233. Therefore, the support pin 207 is in contact with the portion of the substrate W which is not supported by the hand 292 and supports the substrate W. Thereby, the substrate|transfer from the hand 292 to the lifting plate 233, and the hand 292 is ejected to a direction corresponding to the direction perpendicular to the drawing (step "I). Next, by the driving of the elevating mechanism 234, The two lift plates 233 are lowered until the upper surface 233a coincides with the height of the upper surface 225a of the fixed plate 225. If the lift plate 233 is lowered as described above, the support pins 2〇7 are buried in the upper surface 233a of the lift plate 233. Further, the upper surface 233a of the lifting plate 233 and the upper surface 225a of the fixing plate 225 form a supporting surface for supporting the substrate w. Thereby, after the lifting plate 233 is lowered, the supporting surface 233a, 112324.doc - 34 - 1312857 225a Contacting the entire lower surface of the substrate w, and substantially horizontally supporting the substrate W. Then, the cover 222 is lowered and adhered to the base body 221, and the chamber 2〇2 is closed. Thereby, the 'decompression drying device 201d becomes as shown in FIG. In the state shown, the processing chamber 220 in an airtight state is formed (step S23). Next, the ambient gas in the processing chamber 220 is depressurized, and the processing liquid on the substrate w is dried. In the drying process, the substrate is dried. W is also in contact with the support surface 23 3a, 225a are supported by the supporting surfaces (step S24). After the drying process is completed, the state of decompression of the ambient gas in the processing chamber 22 is maintained, and as shown in Fig. 27, the lifting plate 233 is slightly raised to the connecting member 27 The position away from the base body 221. Thereby, since the support pin 2〇7 protrudes from the upper surface 233a of the lift plate 233, the substrate is separated from the upper surface 233a (step S25). Thereby, in the sixth embodiment In the form, the charging of the substrate w from the support surface is also prevented. Next, the processing gas is supplied to the processing chamber 220, the ambient gas of the processing chamber 220 is returned to atmospheric pressure (step S26), and the lid 222 is raised, the chamber 202 is opened (step S27). Next, the two lift plates 233 are raised to the position where the substrate transfer is performed. During the rise and after the rise, the substrate w is separated from the upper surface 233a of the lift plate 233. The support pin 2〇7 is supported by the point (step S28). Next, the hand 292 enters the chamber 202 to transfer the substrate|from the lift plate 233 to the hand 292. Further, after the lift plate 233 is lowered, the hand 292 is withdrawn to Outside the chamber 202, the substrate will be moved In the case of the sixth embodiment, the substrate W between the transfer mechanism and the transfer mechanism is realized in the state of the point support. Since it is transmitted, charging is not generated in the transfer of the substrate w. Further, in the sixth embodiment, in order to prevent the element from being broken due to contact charging, the lifting plate 233 and the fixing plate 225 which constitute the supporting surface of the substrate W may be used. The surface coating is insulative, or the conductor material is coated and grounded.

&lt;8 ·第3至第6實施形態之變形例&gt; 上述第3至第6實施形態可進行各種變形。以下說明第3 至第6實施形態之変形例。 第3至第5實施形態中,雖於基板w之乾燥處理中,升降 板203面接觸於存在有處理液之製品區域之背面侧,但若 可面接觸於至少該製品區域之背面側整體,則可面接觸於 較其更廣闊之區域。例如,亦可使升降板2〇3面接觸於基 板W之整個背面並支撐基板w。&lt;8. Modifications of the third to sixth embodiments&gt; The third to sixth embodiments described above can be variously modified. An example of the shape of the third to sixth embodiments will be described below. In the third to fifth embodiments, in the drying process of the substrate w, the elevating plate 203 is in surface contact with the back side of the product region where the processing liquid is present, but if it is in surface contact with at least the entire back side of the product region, It can be in contact with a wider area. For example, the surface of the lifting plate 2〇3 may be brought into contact with the entire back surface of the substrate W to support the substrate w.

又,第6實施形態中,雖於處理基板贾時,支撐面面接 觸於基板W之背面整體$支樓基板w ’但可面接觸於至少 處理液所存在之製品區域之背面側整體。 又,第6實施形態中,雖設置有2個升降板幻],但亦可 根據基板W之尺寸等而設置3個以上升降板。 【圖式簡單說明】 圖1係表示第丄實施形態之減藶乾燥裝置之概略構成圖。 圖2係表示減壓乾燥裝置之動作流程圖。 ® 3係表示減屡乾.择# ¥ + &amp; ^ ㈣乾综哀置之動作中之一個態樣的圖。 II2324.doc -36 - 1312857 圖4係表示減壓乾燥裝置之動作中之一個態樣的圖。 圖5係表示減壓乾燥裝置之動作中之一個態樣的圖。 圖6係表不第2實施形態之減壓乾燥裝置之概略構成圖。 ' _ 7係表不減壓乾燥裝置之動作中之-個態樣的圖。 ' 圖係表示減壓乾燥裝置之動作中之一個態樣的圖。 圖9係表示減壓乾燥裝置之動作中之一個態樣的圖。 圖10係表示具有閉塞板之減壓乾燥裝置的圖。 _ 圖11係表不具有閉塞板之減壓乾燥裝置的圖。 圖12係表示具有溫度調整器之減壓乾燥裝置的圖。 圖丨3係表不第3實施形態之減壓乾燥裝置之概略構成 圖。 圖Μ係表示連接構件周邊之構成之放大圖。 圖15係表示連接構件周邊之構成之放大圖。 圖16係表示減壓乾燥裝置之動作流程圖。 圖W係表示減壓乾燥裝置之動作中之一個態樣的圖。 • 目18係表示減壓乾燥裝置之動作中之-個態樣的圖。 圖1 9係表不減壓乾燥裝置之動作中之一個態樣的圖。 圖係表示減壓乾燥裝置之動作中之一個態樣的圖。 圖21係表示第4實施形態之減壓乾燥裝置之概略構成 圖。 圖22係表示第5實施形態之減壓&amp;㈣^ &amp; 圖。 舟又 圖23係表示減壓乾燥裝置之動作中之—個態樣的圖。 圖24係表示第6實施形態之減壓乾燥裝置之概略構成 112324.doc -37- 1312857Further, in the sixth embodiment, when the substrate is processed, the support surface is in contact with the entire back surface of the substrate W by the support substrate w', but it is in surface contact with at least the entire back side of the product region where the processing liquid exists. Further, in the sixth embodiment, two lifting plates are provided, but three or more lifting plates may be provided depending on the size of the substrate W or the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic block diagram showing a reduced-thaw drying apparatus according to a third embodiment. Fig. 2 is a flow chart showing the operation of the vacuum drying apparatus. ® 3 is a diagram of one of the actions of the dry and sorrowful action. # # + &amp; ^ (4) II2324.doc -36 - 1312857 Figure 4 is a view showing one aspect of the operation of the reduced-pressure drying device. Fig. 5 is a view showing one aspect of the operation of the reduced-pressure drying device. Fig. 6 is a schematic block diagram showing a vacuum drying apparatus according to a second embodiment. ' _ 7 is a diagram of the state of the action of the vacuum drying device. The figure shows a diagram of one of the actions of the reduced-pressure drying device. Fig. 9 is a view showing one aspect of the operation of the vacuum drying apparatus. Fig. 10 is a view showing a vacuum drying apparatus having a blocking plate. Figure 11 is a diagram showing a vacuum drying apparatus without a occlusion plate. Fig. 12 is a view showing a vacuum drying apparatus having a temperature adjuster. Fig. 3 is a schematic view showing the configuration of the vacuum drying apparatus of the third embodiment. The figure shows an enlarged view of the configuration of the periphery of the connecting member. Fig. 15 is an enlarged view showing the configuration of the periphery of the connecting member. Fig. 16 is a flow chart showing the operation of the vacuum drying apparatus. Figure W is a view showing one aspect of the operation of the reduced-pressure drying device. • Item 18 shows a diagram of the behavior of the vacuum drying unit. Fig. 19 is a view showing an aspect of the operation of the vacuum drying apparatus. The figure shows a view of one of the actions of the vacuum drying apparatus. Fig. 21 is a schematic block diagram showing the vacuum drying apparatus of the fourth embodiment. Fig. 22 is a view showing the decompression &amp; (4) ^ &amp; Fig. 23 is a view showing an aspect of the operation of the vacuum drying apparatus. Figure 24 is a view showing the schematic configuration of the vacuum drying apparatus of the sixth embodiment 112324.doc -37- 1312857

圖25係表示減壓乾燥裝置 圖26係表示減壓乾燥裝置 圖27係表 示減壓乾燥裝置 【主要元件符號說明】 2 腔室 3 升降板 20 處理室 21 基座體 22 蓋體 25 固定板 33 升降板 202 腔室 203 升降板 207 支撺銷 220 處理室 221 基座體 222 蓋體 270 連接構件 W 基板Fig. 25 is a view showing a vacuum drying apparatus. Fig. 26 is a view showing a vacuum drying apparatus. Fig. 27 is a view showing a vacuum drying apparatus. [Main component symbol description] 2 Chamber 3 Lifting plate 20 Processing chamber 21 Base body 22 Cover body 25 Fixing plate 33 Lifting plate 202 chamber 203 lifting plate 207 supporting pin 220 processing chamber 221 base body 222 cover body 270 connecting member W substrate

之動作中之一個態樣的圖。 之動作中之一個態樣的圖。 之動作中之一個態樣的圖。 112324.doc -38 ·A diagram of one of the actions. A diagram of one of the actions. A diagram of one of the actions. 112324.doc -38 ·

Claims (1)

L31测罗731598號專利申請案 对年4月卓]修(更)正替換頁 中文申請專利範圍替換本(98年4月) 十、申請專利範圍: 1. 一種減壓乾職置,其錢為:其係對處理室内之環境 氣體進行減壓並乾縣板上之處理㈣,且包含: 升降板與固定板; 上述升降板-邊以其上表面,面接觸支持上述基板, 邊於與上述處理室外之搬送機構之間進行前述基板之 傳遞;L31 measuring Luo 731598 patent application for the year of April Zhuo] repair (more) is replacing the page Chinese application patent scope replacement (April 1998) X. Patent application scope: 1. A decompression dry position, its money It is: the decompression of the ambient gas in the treatment chamber and the treatment on the dry plate (4), and includes: a lifting plate and a fixing plate; the lifting plate-side is supported by the upper surface and the surface is supported by the substrate, Transferring the substrate between the transfer mechanisms outside the processing chamber; 乾燥上述基板上之處理液時,以上述固定板之上表面 及上述升降板之上表面,面接觸於至少上述處理液所存 在之製品區域之背面側整體而支撐上述基板。 2. 如請求項1之減壓乾燥裝置,纟中複數之上述升降板互 相隔開而配置。 3’如吻求項1之減壓乾燥裝置,其t面接觸上述基板之背 面側時HP接之上述升降板與上述固定板之間隔為^ mm 以下。 4.如明求項1、2或3之減壓乾燥裝置,其中更包含閉塞 板於面接觸上述基板之背面側時,閉塞鄰接之上述升 降板與上述固定板之間的空間。 y长項1、2或3之減壓乾燥裝置,其中更包含溫度調 整器,其調整上述升降板與上述固定板之間之溫度差。 月求項1、2或3之減壓乾燥裝置,其中上述升降板之 表面與上述固定板之表面由導體物質構成且接地。 7·如請求項丨、2或3之減壓乾燥裝置,其中上述升降板之 表面與上述固定板之表面由絕緣物質構成。 112324-980430.doc 1312857 _ _ __________*^··ι _ &quot;&quot;** 卜年爷月4日修(更)正替換頁 一種減壓乾燥裝置,其特徵為:其係對處理室内之環境 氣體進行減壓並乾燥基板上之處理液者,且包含: 升降板,其於乾燥上述基板上之處理液時,以支樓 面’面接觸於其背面側而支撐上述基板; 使乾燥後之上述基板於上述處理室内之環境氣體之減 壓狀態下,自上述支撐面離開。 9·如請求項8之減壓乾燥裝置,其中具備有支撐銷,其自上 述支撐面突出而支撐上述基板; 藉由上述支撐銷使上述基板自上述支撐面離開。 10.如請求項9之減壓乾燥裝置,其中進一步具備有連動構 件,其將上述支撐面之升降之運動傳送至上述支撐銷, 與上述支撐面之升降連動,以使上述支撐銷對於上述支 樓面出沒。 Π·如請求項9之減壓乾燥裝置,其中上述支撐銷相對固定 於上述處理室;When the processing liquid on the substrate is dried, the substrate is supported by the surface of the upper surface of the fixing plate and the upper surface of the lifting plate in contact with at least the entire back surface side of the product region in which the processing liquid is present. 2. The decompression drying apparatus of claim 1, wherein the plurality of lifting plates of the crucible are disposed apart from each other. In the vacuum drying apparatus of the present invention, the distance between the lifting plate and the fixing plate which HP is connected to when the t surface is in contact with the back side of the substrate is not more than mm. 4. The vacuum drying apparatus according to claim 1, 2 or 3, further comprising a closing plate that closes a space between the abutting plate and the fixing plate when the surface is in contact with the back side of the substrate. A vacuum drying apparatus of length 1, 2 or 3, further comprising a temperature adjuster for adjusting a temperature difference between said lifting plate and said fixing plate. The vacuum drying apparatus of claim 1, 2 or 3, wherein the surface of the lifting plate and the surface of the fixing plate are made of a conductor material and grounded. 7. The vacuum drying apparatus according to claim 2, wherein the surface of the lifting plate and the surface of the fixing plate are made of an insulating material. 112324-980430.doc 1312857 _ _ ___________^··ι _ &quot;&quot;** 卜年爷月4日修 (more) replacement page A vacuum drying device, characterized by: The ambient gas is depressurized and dried the processing liquid on the substrate, and includes: a lifting plate that supports the substrate while the surface of the support floor is in contact with the back side of the substrate; The substrate is separated from the support surface in a reduced pressure state of the ambient gas in the processing chamber. 9. The reduced-pressure drying apparatus according to claim 8, wherein a support pin is provided which protrudes from the support surface to support the substrate, and the substrate is separated from the support surface by the support pin. 10. The vacuum drying apparatus of claim 9, further comprising: a linking member that transmits the lifting movement of the supporting surface to the support pin, in conjunction with the lifting of the supporting surface, so that the supporting pin is for the support The floor is infested. The vacuum drying apparatus of claim 9, wherein the support pin is relatively fixed to the processing chamber; 進一步具備有升降機構’其藉由使上述支撐面於上述 處理室相對升降,而使上述支撐銷對於上述支撐面出 沒。 12.如請求項8sn中任一項之減壓乾燥裝置,其中上述升 降板之表面由導體物質構成且接地。 13·如請求項8至11中任一項之減壓乾燥裝置,其中上述升 降板之表面由絕緣物質構成。 14. -種録錢方法’其特徵為:其絲燥基板上之處理 液者,且包含: 112324-980430.doc 1312857 濟4月必曰修(更)正替換頁 ' ........丨丨丨 ~^ 一面以支撐面,面接觸而支撐上述基板,一面對環境 氣體進行減壓並乾燥上述基板上之處理液之乾燥步驟; 及 上述乾燥步驟之後,一面維持上述環境氣體之減壓狀 態,一面將上述基板自上述支摟面離開之離開步驟。Further, a lifting mechanism is provided which causes the support pin to be lifted on the support surface by relatively raising and lowering the support surface in the processing chamber. 12. The reduced-pressure drying apparatus according to any one of the preceding claims, wherein the surface of the above-mentioned riser plate is composed of a conductor material and is grounded. The vacuum drying apparatus according to any one of claims 8 to 11, wherein the surface of the above-mentioned riser plate is composed of an insulating material. 14. - The method of recording money" is characterized by: the liquid on the silky substrate, and includes: 112324-980430.doc 1312857 The April must be repaired (more) is replacing the page '... ..丨丨丨~^ supporting the substrate with a support surface and surface contact, a drying step of decompressing the ambient gas and drying the treatment liquid on the substrate; and maintaining the ambient gas after the drying step In the decompressed state, the step of leaving the substrate away from the support surface is performed. 112324-980430.doc 13 1Ϊ8^?31598號專利申請案 资年斗月:^日修(更)正替換頁 中文圖式替換頁(98年4月) ____ 十一、圖式:112324-980430.doc 13 1Ϊ8^?31598 Patent Application Year of the Year: ^日修(more) replacement page Chinese pattern replacement page (April 1998) ____ XI, schema: 112324-980430.doc 1312857112324-980430.doc 1312857 51 52 53 54 55 56 ST 58 59 510 511 512 112324.doc 圖2 131285751 52 53 54 55 56 ST 58 59 510 511 512 112324.doc Figure 2 1312857 圖3image 3 112324.doc ,23 1312857 2 / 1 a S/ ,22 / 圖5112324.doc ,23 1312857 2 / 1 a S/ ,22 / Figure 5 24twenty four 112324.doc -4- 13118»罗731598號專利申請案 中文圖式替換頁(98年4月)112324.doc -4- 13118»Royal 731598 Patent Application Chinese Graphic Replacement Page (April 1998) 112324-980430.doc 1312857112324-980430.doc 1312857 OJ 112324.doc 6- 1312857OJ 112324.doc 6- 1312857 112324.doc 7- 1312857112324.doc 7- 1312857 C\J 112324.doc 1312857C\J 112324.doc 1312857 112324.doc 1312857 ❿ 寸 CVJ112324.doc 1312857 ❿ inch CVJ 寸 CVJ OJ 112324.doc 10- 13 1 1598號專利申請案 中文圖式替換頁(98年4月)Inch CVJ OJ 112324.doc 10- 13 1 1598 Patent Application Chinese Graphic Replacement Page (April 1998) 寸C\JInch C\J C\J 112324-980430.doc -11 - 13 1®8&gt;§φΐ598號專利申請案 中文圖式替換頁(98年4月) 欢年手月火日修(更)正替換頁C\J 112324-980430.doc -11 - 13 1®8&gt;§ φ ΐ 598 Patent Application Chinese Illustrated Replacement Page (April 1998) Happy New Year's Day Fire (Re) Replacement Page 201a201a 112324-980430.doc 12- 1312857 ( v!v!v!v!v/!v:!v!vXv!-X112324-980430.doc 12- 1312857 ( v!v!v!v!v/!v:!v!vXv!-X .一 2〇了 &lt;2033One 2 〇 &lt;2033 罱14罱14 112324.doc -13 - 1312857112324.doc -13 - 1312857 521 522 523 524 525 526 S2T 528 529 112324.doc 14- '2231312857 202521 522 523 524 525 526 S2T 528 529 112324.doc 14- '2231312857 202 罱17 /223罱17 /223 112324.doc -15 - &lt;223 1312857 2〇2、 / 201a /222 /112324.doc -15 - &lt;223 1312857 2〇2, / 201a /222 / 圖19Figure 19 112324.doc -16- 1312857112324.doc -16- 1312857 圖21 -223 201cFigure 21 - 223 201c '222 202- 224 2〇5一 -203a 1 -2 了了 203 m 2 了了 224 204 221'222 202- 224 2〇5一 -203a 1 -2 Up 203 m 2 Up 224 204 221 232 204- 圖22 205 112324.doc -17 - 1312857232 204- Figure 22 205 112324.doc -17 - 1312857 112324.doc 18- 1311598號專利申請案 中文圖式替換頁(98年4月)112324.doc Patent Application No. 18- 1311598 Chinese Graphic Replacement Page (April 1998) 寸OSI國 112324-980430.doc -19- 1312857 17C\JC\1Inch OSI country 112324-980430.doc -19- 1312857 17C\JC\1 S醒 112324.doc 20- 1312857 寸CSJCNJS wake up 112324.doc 20- 1312857 inch CSJCNJ 9OVJ醒 112324.doc 13128579OVJ wake up 112324.doc 1312857 卜s 112324.doc -22 -卜 s 112324.doc -22 -
TW095131598A 2005-09-08 2006-08-28 Low pressure dryer and substrate drying method TWI312857B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005260835A JP2007073833A (en) 2005-09-08 2005-09-08 Reduced pressure drying apparatus and substrate drying method
JP2005260775A JP2007073827A (en) 2005-09-08 2005-09-08 Reduced-pressure drying apparatus

Publications (2)

Publication Number Publication Date
TW200724836A TW200724836A (en) 2007-07-01
TWI312857B true TWI312857B (en) 2009-08-01

Family

ID=38101488

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131598A TWI312857B (en) 2005-09-08 2006-08-28 Low pressure dryer and substrate drying method

Country Status (2)

Country Link
KR (1) KR100875347B1 (en)
TW (1) TWI312857B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI461646B (en) * 2009-09-07 2014-11-21 Tokyo Electron Ltd Device and method for reduced-pressure drying

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101020674B1 (en) * 2008-11-18 2011-03-09 세메스 주식회사 Apparatus for drying a photoresist layer on a substrate
KR101020675B1 (en) * 2008-11-18 2011-03-09 세메스 주식회사 Apparatus for drying a photoresist layer on a substrate
JP6872328B2 (en) * 2016-09-06 2021-05-19 株式会社Screenホールディングス Vacuum drying device, vacuum drying system, vacuum drying method
KR102121418B1 (en) * 2018-07-30 2020-06-10 (주)에스티아이 Substrate support apparatus and control method thhereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI461646B (en) * 2009-09-07 2014-11-21 Tokyo Electron Ltd Device and method for reduced-pressure drying

Also Published As

Publication number Publication date
KR20070029045A (en) 2007-03-13
TW200724836A (en) 2007-07-01
KR100875347B1 (en) 2008-12-22

Similar Documents

Publication Publication Date Title
TWI312857B (en) Low pressure dryer and substrate drying method
JP5248038B2 (en) Mounting table and plasma processing apparatus using the same
JP2001353682A (en) Electrostatic attraction device, substrate conveyor and evacuation process device
TW200818385A (en) Substrate-mounting mechanism and method for transferring substrate
TW200814182A (en) Substrate dryer using supercritical fluid, apparatus including the same, and method for treating substrate
WO2011089827A1 (en) Bonding apparatus, bonding method, and computer storage medium
JP2013115124A (en) Joint device, joint system, joint method, program, and computer storage medium
JP2009122666A (en) Apparatus for bonding substrates and method for bonding substrates
JP2007073833A (en) Reduced pressure drying apparatus and substrate drying method
TWI225008B (en) Ink-jet printing apparatus
TW484198B (en) Transfer apparatus and accommidating apparatus for semiconductor process, and semiconductor processing system
JP2011056335A (en) Apparatus for pre-drying and method of pre-drying
JP2001179673A (en) Substrate conveyance device
TWI360159B (en)
JP2007073827A (en) Reduced-pressure drying apparatus
JP2015207691A (en) Substrate processing system, substrate processing method, program, and computer storage medium
JP4471487B2 (en) Vacuum processing equipment, vacuum processing method
JP3602359B2 (en) Positioning device for flat work
JP2013030614A (en) Film formation method and film formation apparatus
JP2006188313A (en) Substrate conveying device and substrate inspection device
KR100934770B1 (en) Substrate Processing Equipment
TW525211B (en) Heat treating apparatus
JP7268931B2 (en) Bonding method, substrate bonding apparatus, and substrate bonding system
KR102654155B1 (en) Substrate processing apparatus and substrate processing method
JP5323730B2 (en) Joining apparatus, joining method, program, and computer storage medium

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees