I309&_ 97-05-26 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種微影製程，且特別是有關於一種 光阻塗佈的前處理方法以及於基底上形成光阻的方法。 【先前技術】 一般半導體元件製造的流程相當複雜，包括薄膜沈 積、微影、蝕刻、離子植入及熱製程步驟等等。其中，微 影(Photolithography)製程可以說是整個半導體製程中，最 舉足輕重的步驟之一。微影技術的基本製程是由塗佈光 阻、曝光及顯影三大步驟所構成。 其中，在微影製程裡所使用的光阻，主要是由樹脂 (Resin)、感光劑(Sensitizer)及溶劑等三種不同成分所混合 而成’以液態的形式存在的。而光阻的優劣除了與光阻的 感光能力相關之外，好的光阻應該還具備良好的附著性、 抗触刻性及解析度。⑽不良的附著性或是不佳的抗餘刻 性’都將使雜底下_膜在麵_性卿時，發生圖 纖 =差甚至失敗。而不良的解析度將使得製程的精 岔程度文限。基本上這幾點，均盥来 一 „。因此’光阻的好壞與製程的良率和精確度 有非常㈣的_。其中，影響光 = 否有確實且完全的錢魏力，以及光阻是 圖1A到圖⑴為習知之—種於基底上形成光阻的方 法：〇 、13〇 看·/d 97-05-26 A底1月〇Γ「，丄A，先提供預定塗佈光阻的基底10卜其中， 土底 上包含許多大大小小的元件έ士構，#；r零芸、丄 :件:=層_隨著形=== 結構及介電層表佈光阻時’光阻的表面也隨著 是在中，已有針對此問題提供—解決方法，就 :it: ’先於基底101上塗佈-層製程平坦化層 3 驟之後，即可得到較平坦的基底101表面。 其中樹脂的功能是作為黏人巧二=刀 含樹脂， 能冰添“ “主 劑，因此光阻為呈現濃稠的液 時，右若基底1G1仍為乾燥表面，則進行旋轉塗 上述的問題，會在基底峰先= 不l技術中軸已提出了使用溶劑濕 潤土底101表面的方法。然而，這個濕潤基底1〇1的步驟 部很有可能造成製程平坦化層103的損壞，使得基底101 表面上變得更加的起伏不平。 接者，請參照圖1C，由於上述因使用溶劑濕潤基底 101而造成基底101的表面更加的起伏不平，因此使得在 後續光阻105塗佈時，光阻1〇5❺表面也跟著被破壞後的 製程平坦化層1〇3而呈現高高低低的形狀。如此一來，就 會大大地影響圖案轉移的準確性。 【發明内容】 有鑑於此’本發明的目的就是在提供—種於基底上形成光 1309臨一 97-05-26 阻的方法，以解決製程平坦化層損壞的問題，並解決光阻 表面起伏不平的問題。 基於上述與其他目的’本發明提出—種於基底上形成 光阻的方法’包括提供-基底，且於此基底上且有 平坦化層。雜，於此製程平坦化層的表面上形成隔離層， 以及利用賴测此基底的表面。其巾，隔縣之材質不 溶於此溶劑中。最後，在基底上塗佈光阻。 、依知本發明的較佳實施例所述之於基底上形成光阻的 方法，上述之製程平坦化層之厚度例如在1〇〇〇〜6〇〇〇埃之 間.。而形成隔離層的方法例如是介電解析度增進塗佈技術 (Dielectric Resolution Enhancement Coating Technology >I309&_97-05-26 IX. Description of the Invention: [Technical Field] The present invention relates to a lithography process, and more particularly to a pretreatment method for photoresist coating and forming light on a substrate The method of resistance. [Prior Art] The flow of general semiconductor device fabrication is quite complicated, including film deposition, lithography, etching, ion implantation, and thermal processing steps. Among them, the photolithography process can be said to be one of the most important steps in the entire semiconductor process. The basic process of lithography consists of three steps: coating photoresist, exposure and development. Among them, the photoresist used in the lithography process is mainly composed of three different components of a resin (Resin), a sensitizer (Sensitizer) and a solvent, which are present in a liquid form. In addition to the photo-resistance of the photoresist, the good photoresist should have good adhesion, resistivity and resolution. (10) Poor adhesion or poor resistance to remnantness will cause the pattern to be poor or even fail when the film is in the surface. The poor resolution will make the process more precise. Basically, these points are all coming together. Therefore, 'the quality of the photoresist and the yield and accuracy of the process are very (4) _. Among them, the influence of light = whether there is a real and complete money Wei Li, and light The resistance is shown in Fig. 1A to Fig. 1 (1) as a conventional method for forming a photoresist on a substrate: 〇, 13〇··d 97-05-26 A bottom January 〇Γ, 丄A, first provide predetermined coating The substrate 10 of the photoresist includes a plurality of large and small components of the soil structure, #;r芸,芸::: layer_ with shape=== structure and dielectric layer surface resist When the surface of the photoresist is also in the middle, the solution has been provided for this problem, namely: it: 'Before the coating on the substrate 101 - the layer flattening layer 3, the flatness can be obtained. The surface of the substrate 101. The function of the resin is as a sticky plastic = knife containing resin, can add "the main agent, so when the photoresist is thick liquid, if the substrate 1G1 is still a dry surface, then proceed Rotating coating the above problem will result in the use of a solvent to wet the surface of the soil 101 in the base peak first = not l technology. However, this The step of wetting the substrate 1〇1 is likely to cause damage to the process planarization layer 103, making the surface of the substrate 101 more undulating. Referring to FIG. 1C, the above-mentioned substrate 101 is wetted by using a solvent. The surface of the substrate 101 is more undulating, so that when the subsequent photoresist 105 is applied, the surface of the photoresist 1〇5❺ is also followed by the damaged process planarization layer 1〇3 to exhibit a high and low shape. The accuracy of the pattern transfer is greatly affected. [Invention] In view of the above, the object of the present invention is to provide a method for forming light 1309 Pro-97-05-26 resistance on a substrate to solve the process flatness. The problem of layer damage and the problem of undulation of the photoresist surface. Based on the above and other objects, the present invention proposes a method of forming a photoresist on a substrate, which comprises providing a substrate and planarizing on the substrate. The layer is formed on the surface of the planarization layer of the process, and the surface of the substrate is used. The material of the substrate is insoluble in the solvent. Finally, Coating a photoresist on a substrate. According to a preferred embodiment of the present invention, a photoresist is formed on a substrate, and the thickness of the process planarization layer is, for example, 1 to 6 Å. The method of forming the spacer layer is, for example, Dielectric Resolution Enhancement Coating Technology >
DiRECT)其中’此隔離層之厚度例如在⑻埃之 間。另外，溶劑例如是晶邊清洗液(edge backside rinse， EBR) ° 二本發明因採用隔離層包覆製程平坦化層之光阻塗佈 的則處理方法，m此解決了在習知技術巾’因使用溶劑濕 满基摩，步驟，使製程平坦化層被溶劑溶解而損壞的情況。 ▲為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 一本i月之概心疋於製程平坦化層的表面上，再形成一 巧層’輯因溶舰潤基底所造成製程平坦化層 的知壞。以下實施例係用以說明本發明之應用，但並非用 I3〇9^2wadoc/d 97-05-26 程中需要進行微影製 以限定本發明的範圍，舉凡半導體製 程之步驟，均可應用本發明。 圖2A到圖2D繪示依照本發明—較 於基底上形成光阻之製程流程剖面示意圖。μ β '、一種 請先參照圖2Α，於基底201上开 2〇3。其中’此製程平坦化層2〇3之 ::心 在麵〜_G埃之間。形成此製裎平坦化層 201的表面也顯得較平整。 土- 接著，請參照圖2B，於製程平坦化層朋的表面上 :成^層205’利用此隔離層2〇5包覆製程平坦化層 形成此隔離層挪的方法例如是介電解析度增 進塗布且隔離層205的厚度例如根據所需設定在 500〜15〇〇 之間。然而，上述提到的形成隔離層抓的方 ^ 實施例中是介電解析度增進塗倾術來形成 的’ ^疋並不絲減紐於此錢，其他可形成隔離層 、方法仍射以在此細，而介電解析 術僅當作範狀。 接著，請參照圖2C ’已知光阻2〇7為濃稠的液態溶 劑，為了使後續的旋轉塗佈光阻2〇7可以順利完成，將於 基底201上進行個濕潤的步驟，亦即利用—溶劑濕潤此 基底203的表面。射，此溶劑例如是晶邊清洗液‘。而上 述隔離層2G5係選擇不會溶於溶劑中的材f，所以隔離層 205具有保護製程平坦化層加的作用，因此在習知技術 中製程平坦化層203受到溶劑破壞的問題也將得以解決。 I3〇9%2wG.doc/d 97-05-26 之後，睛茶考圖2D，經過圖2C以溶劑濕润基底2〇ι 的步驟之後，於基底201上塗佈-層光阻207。1中，通 常光阻的厚度愈薄，其解析度愈好，但若 性及防範雜質侵入的觀點來看，其厚度應該要厚^ 以Ϊ阻覆蓋在晶片上的厚度，也需要適當的控制二使先 阻達到取適的狀態。舉例來說，本 度可介於4_到_。埃之間，而將此範圍== 最佳狀態，但並不代表本發明就侷限於此範圍f度視為 綜上所述，本發明之特點是在基底上形成 3離，;=層之表面上又形成-層隔離層。利用 此離層包覆製程平坦化層， 受到溶劑清洗時的破壞，繼續保持表面^。=^致 在塗佈光阻於基底時，光阻的表面也就比較平坦了，且 =;的技術上可提升圖案轉移的準•度，進而提升製 雖然本發明已以較佳實施例揭露如上，^ 發明二任何熟習此技藝者，在不脫離本發明之精神 内，當可作些許之更動與潤飾，因此發 範圍當視後附之申請專利範圍所界定者為準。 濩 【圖式簡單說明】 之流知之—齡基底切献阻的方法 ，2A關叫會示依照本發明—較佳實施例的 基底上形成光阻之製程流程韻示意圖。 1309¾^ doc/d 97-05-26 【主要元件符號說明】 101、201 :基底 103、203 :製程平坦化層 105、207 :光阻 205 :隔離層 10DiRECT) wherein the thickness of the spacer layer is, for example, between (8) angstroms. In addition, the solvent is, for example, an edge backside rinse (EBR). The second method of the present invention is applied to a photoresist coating using a barrier coating process planarization layer, thereby solving the problem in the conventional technology towel. Due to the use of the solvent to wet the base, the process is such that the process planarization layer is dissolved and damaged by the solvent. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the invention. [Embodiment] One of the i-months is focused on the surface of the process flattening layer, and then a unique layer is formed, which is caused by the process flattening layer caused by the solvent-based substrate. The following examples are intended to illustrate the application of the present invention, but do not require lithography in the process of I3〇9^2wadoc/d 97-05-26 to define the scope of the present invention, and the steps of the semiconductor process can be applied. this invention. 2A through 2D are schematic cross-sectional views showing a process flow for forming a photoresist on a substrate in accordance with the present invention. μ β ', one Please refer to Figure 2Α first, and open 2〇3 on the substrate 201. Wherein 'the process flattening layer 2〇3 ::the heart is between the surface ~_G ang. The surface on which the crucible flattening layer 201 is formed also appears to be relatively flat. Soil - Next, please refer to FIG. 2B, on the surface of the process flattening layer: the layer 205' is used to cover the process planarization layer by using the isolation layer 2〇5, and the method for forming the isolation layer is, for example, dielectric resolution. The coating is enhanced and the thickness of the barrier layer 205 is set, for example, between 500 and 15 Torr as desired. However, in the above-mentioned embodiment of forming the spacer layer, the dielectric resolution is improved by the coating technique, and the other layer can form the isolation layer, and the method still shoots. It is fine here, and dielectric analysis is only used as a paradigm. Next, please refer to FIG. 2C 'The known photoresist 2〇7 is a thick liquid solvent. In order to complete the subsequent spin coating photoresist 2〇7, a wetting step will be performed on the substrate 201, that is, The surface of this substrate 203 is wetted with a solvent. Shot, this solvent is, for example, a crystal edge cleaning solution ‘. The spacer layer 2G5 selects the material f which is not dissolved in the solvent, so the spacer layer 205 has the function of protecting the process planarization layer. Therefore, in the prior art, the problem that the process planarization layer 203 is damaged by the solvent will also be solved. solve. I3〇9%2wG.doc/d 97-05-26 After that, the tea is tested in FIG. 2D, and after the step of moistening the substrate 2〇 with a solvent in FIG. 2C, a layer photoresist 207 is coated on the substrate 201. In general, the thinner the thickness of the photoresist, the better the resolution, but the thickness should be thicker to prevent the intrusion of impurities, and the thickness of the photoresist should be covered on the wafer. Make the first resistance reach the appropriate state. For example, the degree can range from 4_ to _. Between the angstroms, and the range == the best state, but it does not mean that the invention is limited to this range. The degree f is considered as described above, and the invention is characterized in that 3 is formed on the substrate, and the layer is formed. A layer of isolation is formed on the surface. By using this separation coating process planarization layer, it is destroyed by the solvent cleaning, and the surface is maintained. When the photoresist is applied to the substrate, the surface of the photoresist is relatively flat, and the technical value of the pattern transfer can be improved, and the system is improved. Although the present invention has been disclosed in the preferred embodiment, As described above, any one skilled in the art will be able to make some modifications and refinements without departing from the spirit of the invention, and the scope of the invention is defined by the scope of the appended claims.濩 [Simple Description of the Drawings] The method of knowing the age-based undercutting, 2A is a schematic diagram showing the process flow for forming a photoresist on a substrate in accordance with the preferred embodiment of the present invention. 13093⁄4^ doc/d 97-05-26 [Description of main component symbols] 101, 201: substrate 103, 203: process planarization layer 105, 207: photoresist 205: isolation layer 10