TW536782B - Method for forming dual-damascene trench - Google Patents

Abstract

A kind of method for forming dual-damascene trench is provided in the present invention. At first, a semiconductor substrate is provided; and a hole, which is filled up by resin material, is formed on the semiconductor substrate. Then, an amine separation layer, a bottom anti-reflection layer and a patterned photoresist layer are sequentially formed on the semiconductor substrate and resin material filling with the hole. After that, by using the patterned photoresist layer as the mask, the bottom anti-reflection layer and the amine separation layer are etched. Finally, by using the patterned photoresist layer and the bottom anti-reflection layer as the mask, the semiconductor substrate is etched.

Description

536782 V. Description of the Invention (l)-In today's semiconductor integrated circuit manufacturing process, the photolithography process can be said to be a very critical step. Can it accurately transfer the designed circuit pattern to the semiconductor substrate? This is one of the important factors that determines the nature of the product. Generally, the lithography process includes several main steps: coating photoresist, eXpoSure, development, and removal of photoresist. In recent years, as the size of components continues to shrink, improvements in lithography technology will face more severe challenges, which have a key impact on the quality, yield and cost of components. In the lithography process of 0.13 or 0.10 micron (# „!), The photoresist that defines the pattern is contaminated during the process, resulting in incomplete photochemical reactions during exposure. Residues (scum), especially for photoresistance of 248 and 193 nanometer (nm) exposure light sources, which will distort the defined pattern and seriously affect the electrical properties of the components. Please refer to Figures la to lh, and la Figure lh is a schematic diagram of a conventional method for forming a double damascene trench by first forming a via hole. Please refer to FIG. 1 & First, a semiconductor substrate 101 is provided, and a photoresist having an opening is formed on the semiconductor substrate 101 (Not shown), and using the photoresist with an opening as a mask, the semiconductor substrate is etched to form a via hole 102, and then the photoresist is removed; the semiconductor substrate 101 is, for example, a silicon substrate. Referring to FIG. 1b, a resin layer 103 is formed on the semiconductor substrate 101 formed with the via hole 102, and the resin layer 103 is also filled in the via hole 102. Then, the resin layer 103 is filled. Etch back until exposed

0503-7668TWF (N); TSMC200M308; Claire.ptd 536782

The surface of the semiconductor substrate is shown as shown in Figure 1 (:). Please refer to Figure Id. Then, a bottom is formed on the surface of the semiconductor substrate 101 and the exposed surface of the resin layer 103 filling the hole 102. The anti-reflection layer 104 and the bottom anti-reflection layer 104 are used as a barrier in the subsequent step of forming a trench. Please refer to FIG. 1e, and then form a light on the bottom anti-reflection layer 〇04. The photoresist layer 105, and the pattern of the grooves on the photomask (not shown) is transferred to the photoresist layer 105 by exposure, and the photoresist layer 105 is etched to form an opening 106; wherein the photoresist layer 1 0 5 is an organic material.

Shuyue said layer 103 is a material containing amine components, but the bottom anti-reflection layer 104 is not a good barrier layer for amine compounds. Therefore, photoresist layer 1 is being formed. After 〇5, the amine compounds contained in the resin layer 103 will pass through the bottom anti-reflection layer 104 and react with the photoresist layer 105, and on the surface of the bottom anti-reflection layer 104 above the resin 103, A residue 10 was formed. Since the residue 1 07 cannot be removed by the etching solution for etching the bottom anti-reflection layer 〇04, the photoresist 105 is used as a mask to etch the bottom anti-reflection layer 104 to form the bottom anti-reflection layer 104. When opening, the residue 1 07 will also become a cover layer. The bottom anti-reflection layer 104 cannot form the same opening as the opening 10, and will be etched into two smaller openings 108, as in the first. f picture. Referring to FIG. 1g, using a photoresist 105 having an opening 108 and a bottom anti-reflection layer 104 as a mask, the semiconductor substrate 101 is etched to form a trench. After etching and removing the bottom anti-reflection layer 104 and the resin layer 103, discontinuous trenches 109 are formed on the semiconductor substrate 101, as shown in FIG. 1h.

0503-7668TWF (N); TSMC2001-1308; Claire.ptd Page 5 536782 V. Description of the invention (3) Because the residue 107 will affect the abundance and the line width of the resist, because of the groove on the substrate 101 Before the process of manufacturing the grooves, an additional 2: 7 of the bottom 2: anti-reflection layer 104 needs to be etched. , ★ ~, and the remaining steps to remove the residue formation i :: is to provide-a way to avoid the formation of photoresist residues can be effectively formed in accordance with; r two ::: Steps of removing photoresist residues, that is, according to the above purpose, the invention The t_t method includes the following steps: providing a conductor; double; forming a square with a trench embedded in-a hole; filling with a resin material; ^ guide ^ substrate, ☆ on the semiconductor substrate, and n trembling from WL true full holes An amine and a patterned photoresist layer are sequentially formed on the semiconductor substrate and the tree-filled material filled with holes; the photoresist layer and the anti-reflection layer M ^ Ji ^ ^ ^ ^ The interlayered photoresist layer is a mask, and the bottom anti-reflection layer and the amine barrier layer are etched; and the semiconductor substrate is etched with a patterned curtain. ^ The bottom anti-reflection layer is a mask. The invention provides the invention. The invention provides a method of forming the following steps: providing a semiconductor substrate, forming a hole in the substrate; filling the hole with a resin material; filling the semiconductor substrate with the material. A spin-coated material layer, an anti-reflection layer, and a patterned photoresist layer are sequentially formed on the resin material of the holes; the bottom anti-reflection layer and the spin-coated material layer are etched using the patterned photoresist layer as a curtain; and The patterned photoresist layer and the bottom anti-reflection layer are mask etching semiconductor substrates. θ According to the above-mentioned object, the present invention further provides a method for forming a dual damascene trench, which includes the following steps: providing a semiconductor substrate to form a hole in the semiconductor substrate; filling the hole with a resin material ^ on the semiconductor 0503-7668TWF (N); TSMC200M308; Claire.ptd Page 6 536782 V. Description of the invention (4) The body substrate and the holes filled with it ^ 丨 one layer,-bottom anti-reflection layer and one "sequentially formed-low temperature deposition Material mask, dear; resist layer: using patterned photoresist layer, resist layer and bottom anti-reflection layer as i-bismuth, / layer material layer; and patterned photomachin layer as mask for etching semiconductor substrate. According to the foregoing objectives, the present invention further provides a method, which includes the following steps: providing a layer hole of a groove; and engraving the resin layer 'where the resin layer will fill the resin layer on the mesial surface == PRODUCT = bottom surface; The bottom and the exposure are 丄 ~ the wind and the degree are 50 Α to 50Κ Αnight τ — 1; the mountain layer, on the I-1 ine photoresist layer is opened on this wide ne photoresist to form a pattern H Hoshiji Several f layers' on the bottom anti-reflection layer, hetero anti-reflection Π; ", and: patterned photoresist as a single screen pattern with openings = layer-opening; with a groove in the dream substrate = kiss substrate and I-line photoresist layer. Example of removing a resist layer and a bottom anti-reflection layer: Please refer to Figs. 2a to 2f, and Fig. 2 to Fig. Are schematic diagrams of steps of the method for forming a trench embedded in the present invention.

Remote # I 5 2 Figure h. Baixian, providing a semiconductor substrate 201, forming a photoresist (not shown) with an opening on the semiconductor substrate 201, and using this photoresist with an opening as a cover | The substrate 2 () 1 forms a hole 202, and then the photoresist is removed; the semiconductor substrate 201 is, for example, a silicon substrate; the hole 202 is used as a via hole. Please refer to FIG. 2b, on the semiconductor substrate 201 where the hole 20 is formed

536782

Two resin layers 203 are formed, and the hole 202 will also be filled with the resin layer 203.

凊 Referring to FIG. 2c, the resin layer 203 is etched back (etch ac until the surface of the semiconductor substrate 201 is exposed; and the semiconductor substrate 201 and the resin layer 203 filled with the holes 202 are exposed An amine-based barrier layer is formed on the surface, such as a Hne photoresist layer 204; wherein the thickness of the I-line photoresist layer 204 is about 50 A to 50] (A. Bu Hne photoresist Layer 204 is a type of photoresist that can be exposed under ii—iiw light, for example, a photoresist with an exposure wavelength of 248 nm, including 365 nm, 193 nm, etc .; usually used for line = 0.13 or 0.10 microns ( The photolithography process is described in reference to Figure 2d. Next, a bottom anti-reflection layer 205 is formed on the I-line photoresist layer 204, and a photoresist layer 20 6 is formed on the bottom anti-reflection layer 205. The photoresist layer 206 is an organic material, such as DVV193 or a photoresist suitable for 193nm, and the pattern of the groove on the photomask (not shown) is transferred to the photoresist 206 by exposure, and the photoresist The resist layer 206 is etched to form an opening 20 7; wherein the bottom anti-reflection layer 205 can be isolated to form a photoresist layer 206 to the semiconductor 2〇1 damage than the substrate, but also at the subsequent step of forming the groove by etching the semiconductor substrate a mask of 0. 1 to form a trench 2〇

Because the photoresist layer 204 is a good barrier layer for amine compounds, when the photoresist layer 206 is formed on the I-line photoresist layer 204, the amines in the tree layer 203 The compound does not pass through the I-iine photoresist layer 204, so it does not react with the photoresist layer 206 formed on the bottom anti-reflection layer 205, and it is on the surface of the bottom anti-reflection layer 205 above the tree moon layer 203. No residue will be generated, and the shape of the subsequent grooves will not be affected if no residue is generated.

〇503-7668TWF (N); TSMC200M308; Claire.ptd Page 8 536782

536782 A brief description of the drawings In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is described below in conjunction with the accompanying drawings to make a detailed description as follows: The 1 h diagram is a schematic diagram of the steps of a conventional method for forming a dual damascene trench by first forming a via hole. Figures 2a to 2f are schematic diagrams of the steps of the method of forming a dual damascene trench according to the present invention. Explanation of symbols: 1 0 2 ~ interlayer hole; 1 0 4 ~ bottom anti-reflection layer 10 6 ~ opening; 10 8 ~ opening; 2 (Π ~ semiconductor substrate 2 3 3 ~ resin layer; 2 5 5 ~ bottom impedance Reflective layer 207 ~ opening; 101 ~ semiconductor substrate 103 ~ resin layer; 105 ~ photoresist layer; 107 ~ residue; 109 ~ trench; 202 ~ hole; 204 ~ I- Line photoresist 206 ~ photoresist layer; 208 ~ trench.

0503-7668TWF (N); TSMC2001-1308; Claire.ptd page 10

Claims (1)

536782 Six applications for patent scope 1 Connection: a method of forming a dual damascene trench 'including the following = a semiconductor substrate' forms a hole on the semiconductor substrate to fill the hole with a material; forming a second semiconductor substrate and filling The resin material that fills the hole: a bottom-increased anti-reflection layer and a patterned optical material. The photoresist layer is a mask, and the bottom is an anti-reflection ^ type barrier layer; and the layer and the amine substrate are patterned with light. The resist layer and the bottom anti-reflection layer are the mask and the semiconducting. 2. The double-damascene method described in item 丨 of the patent application scope, which further includes a step of blocking the bottom anti-reflection layer and the amine. . Steps for removing ytterbium 3-The method of forming a dual damascene as described in item 1 of the scope of patent application, wherein the semiconductor substrate is a silicon substrate. ~ 4 • The double-damascene formation method described in item 1 of the scope of the patent application, wherein the hole is a via hole. Method for forming trenches in the trenches 5. Form a double damascene as described in item 丨 of the patent application, wherein the amine barrier layer is a 1 to 1 ine photoresist layer. The following formula 6: The double damascene groove is formed as described in item 5 of the scope of patent application, wherein the thickness of the I-line photoresist layer is 50A to 50A. The method of forming a trench 7-a method of forming a dual damascene trench, comprising the steps of providing a semiconductor substrate and forming on the semiconductor substrate-filling the hole with a resin material;-a hole; filling the semiconductor substrate and filling the hole Holes in the resin material 536782, the scope of the patent application is to coat the material layer, an anti-reflection layer and a patterned photoresist layer; the coating material map; the photoresist layer is a cover [engraving the bottom antireflection layer and the rotating base = 4 pattern The photoresist layer and the bottom anti-reflection layer are masks, and the semi-conductive method described in item 7 of the method for forming a double mosaic groove described in item 7 above includes the bottom anti-reflection layer and t Step 9 of removing the spin-coated material layer: The method as described in item 7 of the scope of patent application, wherein the semiconductor substrate is a substrate. The method of n trench 10. As in the seventh method of the patent application scope, the hole is a via hole. Method for forming double inlay trench 11. Method as described in item 7 of the scope of patent application 'wherein the spin-coating material layer is a photoresist layer into inlay groove. 12. As in the scope of patent application " The method described, wherein the 1-1 ine photoresist layer ## /. Provided by the formation of a double-inlaid trench groove into a trench-semiconductor substrate, a semiconductor substrate is formed on the semiconductor substrate: filling the hole with a resin material; & forming a hole in the semiconductor substrate and Fill the hole to form a low-temperature deposition material layer, a bottom anti-reflection layer; Figure 1: The patterned photoresist layer is used as a military curtain on the top, and the button is fixed: a photoresist layer; a layer of warm deposition material; and-反射 several reflective layers and the patterned photoresist layer and the bottom π layer as a mask to etch the semiconductor 0503-7668TWF (N); TSMC200M308; Claire.ptd Page 12 536782 6. Apply for a handle ''-body substrate. 14. The method for forming a dual damascene trench as described in item 3 of the patent application scope, further comprising the step of removing the bottom anti-reflection layer and the low-temperature deposition material layer. 15. The method of forming a dual damascene as described in item 丨 3 of the scope of the patent application, wherein the semiconductor substrate is a silicon substrate. 16. The method of forming a dual damascene as described in item 3 of the patent application scope, wherein the hole is a via hole. That is, the method of forming a dual damascene trench as described in item 13 of the scope of the patent application, wherein the low-temperature deposition material layer is a photoresist layer. That is, the method of forming a dual damascene trench as described in item 17 of the scope of the patent application, wherein the thickness of the 31-line photoresist layer is 50A to 50KA. 19. A method of forming a dual damascene trench, comprising the following steps: providing a silicon substrate to form a via hole on the silicon substrate; forming a resin layer on the silicon substrate, wherein the resin layer will fill the interlayer Hole; '/' 〃 engraved the resin layer to expose the surface of the silicon substrate; forming an I-line photoresist layer with a thickness of A to 50KA on the resin substrate and the exposed surface of the resin layer; Forming a bottom anti-reflection layer on the I-line photoresist layer; forming a patterned photoresist on the bottom antireflection layer; using the patterned photoresist as a mask, etching the bottom antireflection layer and the, I-1 ine photoresist layer to form an opening; using the patterned photoresist layer and the bottom anti-reflection layer as the cover 0503-7668TW (N) * TSMC200M308; Claire.ptd Page 13 536782 0503-7668TWF (N); TSMC2001-1308; Claire.ptd page 14