TWI309225B - Substrate movling apparatus and vacuum processing apparatus with thereof - Google Patents

Substrate movling apparatus and vacuum processing apparatus with thereof Download PDF

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Publication number
TWI309225B
TWI309225B TW094127119A TW94127119A TWI309225B TW I309225 B TWI309225 B TW I309225B TW 094127119 A TW094127119 A TW 094127119A TW 94127119 A TW94127119 A TW 94127119A TW I309225 B TWI309225 B TW I309225B
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Taiwan
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substrate
processing
vacuum
chamber
processed
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TW094127119A
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Chinese (zh)
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TW200619120A (en
Inventor
Tatsuhiro Taguchi
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Shimadzu Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32743Means for moving the material to be treated for introducing the material into processing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807Construction (includes replacing parts of the apparatus)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt

Description

1309%doc 九、發明說明: 【發明所屬之技術領域】 本發明是有關於一種配置有基板搬送裝置,且能夠在 真空氣環境中進行諸如薄膜形成、蝕刻處理、熱處理等等 的真空處理裝置。 【先前技術】 通過一台裝置依次進行彼此不同的若干真空處理 時,作為一種能夠在真空狀態下將被處理物由一處理腔室 鲁搬送至下一處理腔室處的裝置,其例如是具有真空預備力口 熱腔至和處理腔室的、且在真空預備加熱腔室處設置有若 干個基板搬送組件的加載固定(L〇ad Lock)型真空裝置, 這已經是目如所公知的。這種裝置可以利用設置在真空預 備加熱腔室兩個部分處的搬送裝置分別實施的升降動作, 對搬送線實施切換,以在處理腔室之間對基板實施搬送接 收(比如說,可以參見專利文獻丨)。 【專利文獻1】日本特開2001 —239144號公報(第2 頁,圖1、圖2) 暴 由專利文獻1公開的這種加載固定型真空裝置,是通 過升降裝置對搬送線實施切換以將基板搬送入處理腔室和 由處理腔室處搬送出的動作,所以存在有搬送線的搬送動 作複雜的問題。 【發明内容】 (1)作為本發明第一方面的一種基板搬送裝置,其特 徵在於可以具有通過搬送面對被處理基板或保持被處理基 1309^25 T/T78pifiCi〇c 板用的基板托架實施保持並實施搬送的搬送機械組件;以 及在水平狀態和相對該水平狀態呈預定傾斜角度的傾斜狀 態間對搬送面實施切換用的傾斜切換機械組件;而且搬送 機械組件可以在搬送面呈水平狀態或傾斜狀態下對被處理 基板或基板托架實施搬送。 (2) 作為本發明第二方面的一種真空處理裝置,可以 具有對被處理基板實施連續真空處理用的兩個或更多個相 互連接著的處理腔室;以及分別設置在至少兩個處理腔室 籲處的、如作為本發明第一方面所述的基板搬送裝置,其特 徵在於設置在至少兩個處理腔室處的各基板搬送裴置,按 照其搬送面能夠大體朝一個方向坡度傾斜以形成一個傾 搬送面的形式構成。 、” (3) 作為本發明第三方面的一種真空處理裝置,其特 徵在於在作為本發明第二方面的真空處理裝置的基礎上, 具有能夠使設置在至少兩個處理腔室處的基板搬送裝置的 各個搬送面,大體朝一個方向坡度傾斜以形成一個傾斜搬 φ 送面用的傾斜控制組件。 (4) 作為本發明第四方面的一種真空處理裝置,其特 徵在於在作為本發明第二、第三方面的真空處理裝置的基 礎上’還進一步具有能夠將被處理基板或基板托架投入至 實施最初真空處理用的處理腔室處,且能夠在朝向大氣開 放和真空密閉間切換的加載腔室;以及能夠將被處理基板 或基板托架由實施最後真空處理用的處理腔室處作為處理 後的基板貫施回收,且能夠在朝向大氣開放和真空密閉間 I3〇9%Uc :=ί腔室。而且’處理腔室還可以兼用作加載腔室[Technical Field] The present invention relates to a vacuum processing apparatus which is provided with a substrate conveying apparatus and which can perform, for example, film formation, etching treatment, heat treatment, and the like in a vacuum gas atmosphere. [Prior Art] When a plurality of vacuum processes different from each other are sequentially performed by one device, as a device capable of transferring a workpiece from a processing chamber to a next processing chamber in a vacuum state, for example, It is well known that a vacuum chamber is provided for the vacuum chamber to the processing chamber and a plurality of substrate transfer assemblies are provided at the vacuum preheating chamber. Such a device can perform a lifting operation performed by a conveying device provided at two portions of a vacuum preheating chamber to switch the conveying line to carry out conveyance and reception of the substrate between the processing chambers (for example, see Patent Literature 丨). [Patent Document 1] Japanese Laid-Open Patent Publication No. 2001-239144 (page 2, Fig. 1 and Fig. 2). The load-fixing type vacuum device disclosed in Patent Document 1 is a transfer device that switches the transfer line by a lifting device. Since the substrate is transported into the processing chamber and the operation is carried out by the processing chamber, there is a problem that the transport operation of the transport line is complicated. SUMMARY OF THE INVENTION (1) A substrate transfer apparatus according to a first aspect of the present invention, characterized in that it may have a substrate holder for transporting a substrate to be processed or holding a substrate to be processed 1309^25 T/T78pifiCi〇c a transport mechanism assembly that maintains and carries out the transport; and a tilt switch mechanism for switching the transport surface between the horizontal state and the tilt state at a predetermined tilt angle with respect to the horizontal state; and the transport mechanism component can be horizontal on the transport surface The substrate to be processed or the substrate holder is transported in an inclined state. (2) A vacuum processing apparatus according to a second aspect of the present invention may have two or more interconnected processing chambers for performing continuous vacuum processing on a substrate to be processed; and respectively disposed in at least two processing chambers The substrate transfer apparatus according to the first aspect of the present invention, characterized in that each of the substrate transporting devices provided at the at least two processing chambers can be tilted substantially in one direction according to the transport surface thereof. Form a form of dumping surface. (3) A vacuum processing apparatus according to a third aspect of the present invention, characterized in that, in addition to the vacuum processing apparatus of the second aspect of the present invention, there is provided a substrate transportable at at least two processing chambers Each of the conveying faces of the apparatus is inclined substantially in one direction to form a tilting control unit for tilting the conveying surface. (4) A vacuum processing apparatus according to a fourth aspect of the present invention, characterized in that it is the second aspect of the present invention. Further, in addition to the vacuum processing apparatus of the third aspect, there is further provided a loading capable of loading the substrate to be processed or the substrate holder into the processing chamber for performing the initial vacuum processing, and capable of switching between opening to the atmosphere and vacuum sealing. a chamber; and the substrate to be processed or the substrate holder can be recovered as a processed substrate from the processing chamber for performing the final vacuum processing, and can be I3〇9% Uc := toward the atmosphere opening and vacuum sealing:= ί chamber. And the 'processing chamber can also be used as a loading chamber

山(5)作為本發明第六方面的—種真空處理裝置,其特 It於本發明第二、第三方面的真空處理裝置的基 —’賴-步具有能触被處理基板或基板托架投入至 真空處理用的處理腔室處,並且能夠將被處理基 、反2 ^托架由實施最後真空處則的處理腔室處逆向搬 il至貝靶最初真空處理用的處理腔室處,作為處理後的基 板實施回收,且能夠在朝向大氣開放和真空密閉間切換的 過渡腔室。^,處理腔㈣可以兼用作過渡腔室。 本發明提供的基板搬送裝置,可以通過在水平狀態和 ^斜狀㈣對搬送面實施切換的方式,進而對被處理基板 或基板^架實施搬送,所以可以使搬送動作簡單,能夠在 知時間裏通過輕微動作進入至搬送狀態。而且,對於將這 種基板搬送裝置設置在真线理裝置處時 5將可以提南被 處理基板等等的傳送速度,提高吞吐量(throughput)。 ^為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂’下文特舉較佳實施例,並配合所附圖式,作詳細說 明如下。 【實施方式】 下面參考圖1〜圖6,對作為本發明實施形式的真空處 理裝置進行說明。 (第一實施形式) 圖1為表示作為本發明第一實施形式的真空處理裝置 13092¾論 c 的構成形式用的整體構成矛立 第一實施形式的真空:==二2為說明作為本發明 送動作的示意圖。圖3為表基J搬 =真r理裝置處的基板搬送裝置=二: 不意圖’其中圖3(a)為示意性平面圖,圖3⑴ 性正面圖。圖4為表示作為本 理裝置中的基板搬送時間=第::_式的真空處 ^ ^ 了 UlL耘用的不意圖。而且在圖 圖4t,相同的構成部件由相同的參考標號示出。 a勒空處理裝置⑽由兼用作加載/卸載腔室的直空預 備加熱腔f1G和錢處_室2()這兩 連^ 外部裝置7G與衫處理裝請分別獨立地ί己置接Ϊ 力10内的上下兩個部分處配置著基板搬 於腔室外部處的加熱部件電源、1〇c相連接。'直 =口還通過管線與排氣系統…和排放系= t;rr在朝向大氣開放和真空密閉狀態間切^= η ’二足而可以對基板w實施 11、13適分別與傾斜切換機械組件12、14相 ::::::相對水平狀態嫩傾斜角度的亀The mountain (5) is a vacuum processing apparatus according to a sixth aspect of the present invention, and the base of the vacuum processing apparatus according to the second and third aspects of the present invention has a touchable substrate or a substrate carrier. Putting it into the processing chamber for vacuum processing, and can reversely move the treated substrate and the counter-electrode from the processing chamber where the final vacuum is performed to the processing chamber for the initial vacuum processing of the shell target. The recovery process is carried out as a substrate after the treatment, and the transition chamber can be switched between opening to the atmosphere and vacuum sealing. ^, the processing chamber (4) can also serve as a transition chamber. According to the substrate transfer device of the present invention, the substrate to be processed or the substrate can be transported by switching between the horizontal and the oblique (four) transport surfaces, so that the transport operation can be simplified and the time can be known. Enter the transfer state with a slight movement. Further, when such a substrate transfer device is installed at the line device, the transfer speed of the substrate to be processed or the like can be increased, and the throughput can be improved. The above and other objects, features, and advantages of the present invention will become more apparent <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; [Embodiment] A vacuum processing apparatus according to an embodiment of the present invention will be described below with reference to Figs. 1 to 6 . (First Embodiment) Fig. 1 is a view showing a vacuum configuration of a vacuum processing apparatus according to a first embodiment of the present invention. Schematic diagram of the action. Fig. 3 is a substrate transfer device at the table base J = true device = two: not intended. FIG. 3(a) is a schematic plan view, and FIG. 3(1) is a front view. Fig. 4 is a view showing the use of the UlL for the substrate transfer time = the vacuum of the ::_ formula in the apparatus. Further, in Fig. 4t, the same constituent members are denoted by the same reference numerals. The a-air treatment device (10) is composed of a direct-air preparatory heating chamber f1G and a money room_room 2 () which are also used as a loading/unloading chamber, and the external device 7G and the shirt processing device are separately connected to each other. In the upper and lower parts of the 10, the substrate is placed on the outside of the chamber, and the heating element power supply is connected to the unit. 'Direct = mouth also through the pipeline and exhaust system ... and the emission system = t; rr in the direction of the open air and vacuum sealed state ^ = η 'two feet can be applied to the substrate w 11, 13 appropriate and tilt switching mechanical components 12, 14 phase:::::: Relatively horizontal state of the angle of inclination

電極P 理月工至20内設置有基板搬送裝置21和RF 电極p。RF電梅p 且“ π 接。電漿處理腔室20與!^於腔室外部處的RF電源施相連 入系統20b間相連接還通過官線與排耽系統20a和氣體導 递钱,從而可以在預定的氣體壓力下實施 I309^pi,oc deposition^ ^ ^ ( Vap〇r 等處理。基板搬送裝置權 接,從而可以在水平狀態^相f 能 的傾斜狀態間進行狀態切換 傾斜角度 分別實施狀態切換用的傾斜衣置11、13、21 與驅動控制回路80相連:刀,:械ί件12、14、22 ’還 11、13、進行詳細朗妾。在下面_對基板搬送裝置 在真空預備加敎腔宮1^ 設置有門型部件G1、、、,在至真卜部裝置70的側面處 腔室20 _邊界㈣職加_室10與電襞處理The substrate transfer device 21 and the RF electrode p are provided in the electrode P. RF electric plum p and "π connection. The plasma processing chamber 20 is connected to the RF power source at the outside of the chamber and connected to the system 20b, and is also delivered through the official line and the drainage system 20a and the gas. The process of I309^pi, oc deposition^^^ (Vap〇r, etc.) can be performed under a predetermined gas pressure. The substrate transfer device is connected, so that the state switching tilt angle can be implemented between the tilt states of the horizontal state and the phase f energy. The tilting garments 11, 13 and 21 for state switching are connected to the drive control circuit 80: the knife, the mechanical member 12, 14, 22 'also 11, 13 for detailed recitation. Below the _ the substrate transport device is in vacuum The pre-filled cavity 1^ is provided with a door type member G1,, and, at the side of the device to the real device 70, the chamber 20_boundary (four) is added to the chamber 10 and the electric treatment is performed.

Sit Hi置ΓΓ施搬人搬出時使真空預備加 呈密閉狀態。門型部; G2f可了貫施搬人搬出之外的時間裏 兩_㈣對基板w實施處理時使 且對=== 可貫施保管並供給至真空處理裝置100,並且 理後的基板Wf施回收的腔室,部通常處於大 =xl〜x4表示的是基板^的傳送動作。箭頭幻 =t基板W通過門型部件G1 _動作,即基板w由 S /Γ&quot;装置71搬达至基板搬送裝置11處時的動作。箭 :二公不的是基板w通過門型部件G2時的動作,即基 板由基板搬送裝置n搬送至基板搬送裝置21處時的動 10 ^0¾ pif.doc 作。箭頭x3表示的县 印基板W由基板搬通過門型部件日寺的動作, 的動作。箭頭x4 * 置21搬送至基板搬送裝置13處時 動作,即基板W :二的是基板W通過門型部件G1時的 72處時的動作。土反搬送裝置13搬送至基板搬送裝置 箭頭 xl、X4 ± - AA a 的動作,可以接雨不、疋基板冒沿水平方向實施搬送時 搬送。換㈣竹θ降機械組舰料紅水平狀態實施 土板w傾斜並沿朝向傾斜方向設定的搬送線 λ也。送時的動作’這是本發明提供的基板搬送裝置所具 有的最大特徵。對於沿箭頭χ2、χ3實施傾斜搬送時,需要 使基,搬送裝置η、13、21呈傾斜狀態,箭頭yl〜y3表 示的疋相應的狀態切換動作。通過如上所述的傳送動作χ1 〜x4,由外部裝置70供給至真空處理裝置1〇〇處的基板 W,可以通過真空處理裝置1〇〇實施預定的連續處理之 後,再回收至外部裝置70處。 下面參考圖2,對上述基板…的傳送動作進行詳細說 明。圖2通過簡化圖的形式,分別利用連接五個搬送軋輥 R和搬送軋輥R間的線段(搬送面)表示著基板搬送裝置 11、13、21。搬送軋輕R在實施真空處理時不產生轉動, 而搭載者基板W。在實施基板傳送時,搬送軋報R繞著與When Sit Hi is placed, the vacuum is pre-filled and sealed. The door type portion; G2f can be disposed in the time other than the time when the person is moved out and out. (4) When the substrate w is processed, the === can be stored and supplied to the vacuum processing apparatus 100, and the substrate Wf is processed. The chamber to be recovered is usually at a large = xl to x4 indicating the transfer operation of the substrate. Arrow illusion = t The substrate W is operated by the gate member G1_, that is, the operation when the substrate w is carried by the S/Γ&quot; device 71 to the substrate transfer device 11. Arrow: The operation when the substrate w passes through the gate member G2, that is, the movement when the substrate is transported by the substrate transfer device n to the substrate transfer device 21 is performed. The movement of the county printed substrate W indicated by the arrow x3 is carried by the substrate through the action of the gate type Japanese temple. When the arrow x4* is transported to the substrate transfer device 13, the substrate W is operated at 72 points when the substrate W passes through the gate member G1. The earth reverse conveyance device 13 is transported to the substrate transfer device. The operations of the arrows xl and X4 ± - AA a can be carried out when the rain is not carried out and the substrate is transported in the horizontal direction. Change (4) Bamboo θ drop mechanical group ship material red horizontal state implementation The earth plate w is inclined and the transport line λ is set along the oblique direction. The operation at the time of delivery' is the greatest feature of the substrate transfer apparatus provided by the present invention. When the inclined conveyance is performed along the arrows χ2 and χ3, it is necessary to cause the base, the conveying devices η, 13, and 21 to be inclined, and the states corresponding to the arrows indicated by the arrows yl to y3 are switched. By the transfer operations χ1 to x4 as described above, the substrate W supplied from the external device 70 to the vacuum processing device 1 can be subjected to predetermined continuous processing by the vacuum processing device 1 and then recovered to the external device 70. . Next, the transfer operation of the above substrate will be described in detail with reference to Fig. 2 . Fig. 2 shows the substrate transfer apparatuses 11, 13, and 21 by a line segment (transport surface) connecting the five transfer rolls R and the transfer rolls R, respectively, in a simplified form. The conveyance rolling light R does not rotate when the vacuum processing is performed, and the carrier substrate W is not produced. When the substrate transfer is carried out, the transfer report R is around

I3〇9%W 紙面垂直_觸,㈣基板w 送裝置u在水平位置(傾 可以使基板搬 斜角度為θ) _行狀態切換斜位置(傾 基板搬送裝置u左端處的搬送軋輥’與位於 ::以使基板崎置11以狀態切換車:τ=:::、從 碩yi所示的方向實施狀態切換。類^、、’ 搬送裝置13在水平位置與傾斜位置、、=基板I3〇9%W Paper vertical_Touch, (4) Substrate w The feeding device u is in the horizontal position (the tilting angle of the substrate can be made θ) _ The row state is switched to the oblique position (the conveying roller at the left end of the tilting substrate conveying device u) and :: The state is switched by the state of the substrate: 11: τ =:::, and the state is switched from the direction indicated by Shuoyi. The class, the 'transport device 13 is in the horizontal position and the tilt position, and the = substrate

狀態切換轴T3,與位输搬送裳置用的 輥的轉動軸一致,f β 右鳊處的搬送軋 軸Tm 使基碰送裝置13以狀態切換 4 沿箭頭y3所示的方向實施狀態切換。 與傾斜位裝置21在水平位置(傾斜角度為士〇。) 狀械(傾斜角度為+ 0或—θ)間進行狀態切換用的 輥,與位於基输送裝置21右端處的搬送軋 狀離Π 致動作,從而可喊基板搬送裝置21以 態ί換 為轉動巾心,沿箭頭y2所示的方向實施狀 、當以沿箭頭x2所示的方向實施傾斜搬送的 進仃說叫’保持在水平狀態的基板搬縣置u的搬送 ,可以知照僅僅繞狀態切換軸丁1向右轉動角度㊀、與搬 送線L2保持一致的方式產生傾斜。在另一方面,保持在 f平狀態的基板搬送襄置21的搬送面,可以按照僅彳^繞狀 恶切換軸T2向右轉動角度θ、與搬送線L2保持一致的方 式產生傾斜。在這種狀態下,通過使基板搬送裝置η和 21的搬送軋輥R朝向右側轉動的方式,可以使基板w由 12 I309225pi,d〇〇 基板搬送裝置η過渡至基板搬钱置21上,進而可以對 該基板w實施處理。在電漿處理腔室2〇中進行的處 以'在!:基板”持水平的狀態下進行,也可以在使 基板W /σ搬送線L2傾斜的狀態下進行。 沿箭頭Χ3戶斤示的方向實施的傾斜搬送,也可以類似的 態的基板搬送裝置21的搬送面,按照僅僅 ί轉動角度θ、與搬送線L3保持-致 的方式產生傾斜。保持在水平狀態的基板 送面,可以按照僅僅繞狀態切換轴T3向左轉=度二 = 方式產生傾斜。在道種狀:下,通 的搬送軋輥尺朝向左側轉動的 方式了以使基板^^由基板搬送裝置21過渡至 裝置13上。傾斜切換機械組件12、14 :板搬达 制回路80的控制下,按照使基板搬送裝置^以驅動控 搬送^卿斜預定角朗方式,對狀 、^的 T3的轉動角度實施控制。 俠軸il、T2、 :面參考圖3,對使基板搬送裝置 的機械,亍說明。基板搬送裝置η用的二 =用 組件12,具有狀態切換用汽紅】 …換機械 切換用汽H的作用下沿方向Α 、可==態 輪3 (Pm10n)。狀態切換用汽缸! 下轉動的小齒 以設置在真空預備加熱腔室1〇 /。σ小齒輪3可 而且’傾斜切換顧師12還配置錢置在真空預傷 13 I3〇92j2^pif-d〇c 加熱腔^ 10内部處的槓桿4 (lever)。槓桿4按照 齒輪3動軸C同軸連接著的轉動圓板(圖中未示/出 的侧面處4的方式設置。當小齒輪3轉動定 時;i將二圖,使槓桿4的前端部與基板搬送: 置11抵接進而主將基板搬送褒置u 置El)的構成形式。圓_表亍的^f/千位置(位 通過按照預㈣隔,在轉動圓板的側面 處3==不同的槓桿的方式,將可以根據槓桿的The state switching axis T3 coincides with the rotation axis of the roller for the transport of the bite transport, and the transport roller Tm at the right side of fβ causes the base collision device 13 to switch state in the direction indicated by the arrow y3 in the state switching state 4. The roller for performing state switching between the tilt position device 21 at a horizontal position (the tilt angle is a girth), the tilt angle is + 0 or - θ, and the transfer roll at the right end of the base transport device 21 Actuating, so that the substrate transporting device 21 can be replaced with the rotating core, in the direction indicated by the arrow y2, and the tilting conveyance in the direction indicated by the arrow x2 is said to be kept at the level. In the state in which the substrate is transported, it is known that the tilt is generated so that the angle 1 is rotated to the right by the state switching shaft 1 and the transport line L2 is aligned. On the other hand, the transport surface of the substrate transporting unit 21 held in the f-flat state can be inclined in such a manner that the angle θ is rotated to the right by the twisted switching axis T2 and the transport line L2 is aligned. In this state, the substrate w can be transferred from the 12 I309225pi, d〇〇 substrate transfer device η to the substrate transfer device 21 by rotating the transfer rolls R of the substrate transfer devices η and 21 toward the right side. This substrate w is treated. The position in the plasma processing chamber 2 is performed in a state where the 'in!: substrate' is horizontal, or may be performed in a state where the substrate W / σ transport line L2 is inclined. In the tilting conveyance to be performed, the conveyance surface of the substrate conveyance device 21 in a similar state may be tilted so as to be held at the conveyance line L3 at only the rotation angle θ. The substrate conveyance surface held in the horizontal state may be only The state switching axis T3 is rotated to the left = degree two = the mode is inclined. In the track type: the passing conveying roller is rotated toward the left side so that the substrate is transferred from the substrate conveying device 21 to the device 13. The tilt switching mechanism units 12 and 14 are controlled under the control of the board transfer circuit 80, and the rotation angle of the T3 of the shape and the control is controlled in accordance with the predetermined method of driving the substrate transfer device to drive the control. Il, T2, and: Referring to Fig. 3, the mechanism for the substrate transfer device will be described. The two-use component 12 for the substrate transfer device n has a state switching steam red... Along the direction 、, can == state wheel 3 (Pm10n). State switching cylinder! The lower rotating small tooth is set in the vacuum preheating chamber 1〇/. σ pinion 3 can also be 'tilt switch Gu Shi 12 also configures the money In the vacuum pre-injury 13 I3〇92j2^pif-d〇c the lever 4 (lever) inside the heating chamber ^ 10. The lever 4 is connected to the rotating disc coaxially connected to the moving shaft C of the gear 3 (not shown/exited) The side surface portion 4 is provided. When the pinion gear 3 rotates at a timing; i will be the second diagram, and the front end portion of the lever 4 is transported to the substrate: the 11 is abutted to form a substrate transporting device, and the configuration is set. ^^f/千位(bits by means of pre-(four) compartments, at the side of the rotating disc 3== different levers, will be available according to the lever

裝置11的傾斜角度。當轉動執跡呈圓 狐/Γΐ Γ桿與基板搬送裝置11抵接時,可以將基板 搬送裝=支撐在傾斜位置(位置£2),#轉動軌跡呈圓 弧D3所㈣槓桿與基板搬送裂置ii抵接時,又可以將基 板搬送裝置11支樓在傾斜位置(位置E3)的構成實例, 已經示出在圖3 (b)中。 下面,對搬送軋輥R的轉動動作進行說明。正如圖3 (a)所示’可以將軋報驅動用電動機5的轉動驅動力傳遞 至轉動軸6處,使轉動轴6按照圖中箭頭b所示的方向轉 動,進而通過傘齒輪(bevel gea〇在該轉動力作用下使各 個搬送軋輥R朝向相同方向轉動。 雖然在圖中未示出,然而基板搬送裝置n、傾斜切換 機械組件12和搬送軋輥R的驅動機械組件,可以沿著箭 頭x2所示的方向設置有兩列。搭餘各舰送滅r上 的基板或是保持基板用的基板托架(基板拖盤),可以沿預 定的傾斜角度傾斜,進而可以通過搬送軋輥尺的轉動,沿 14The angle of inclination of the device 11. When the rotation of the round fox/Γΐ mast is in contact with the substrate transporting device 11, the substrate can be transported and supported at the tilt position (position £2), and the #rotation trajectory is the arc D3 (4) the lever and the substrate are transported. When the ii is abutted, an example of the configuration in which the substrate transfer apparatus 11 is at the inclined position (position E3) can be shown in Fig. 3(b). Next, the turning operation of the conveying roller R will be described. As shown in Fig. 3 (a), the rotational driving force of the rolling drive motor 5 can be transmitted to the rotating shaft 6, and the rotating shaft 6 can be rotated in the direction indicated by the arrow b in the figure, thereby passing through the bevel gear (bevel gea). The respective conveying rolls R are rotated in the same direction by the rotational force. Although not shown in the drawings, the driving mechanism components of the substrate conveying device n, the tilt switching mechanism assembly 12, and the conveying roller R may be along the arrow x2. There are two rows in the direction shown. The board on which the ship is removed or the substrate holder (substrate tray) for holding the substrate can be tilted at a predetermined inclination angle, and the rotation of the roll can be carried out. Along the 14

I30m,〇c 作為搬送方向的箭頭幻所示的方向實施傳送。 &amp;、、,基板搬迗裝置13和傾斜切換機械組件Μ,以;5其&amp; 送裝置2〗和傾斜切賴械組件22,其基 二 =與基《送裝置n及傾斜切換機械師12 口 以在廷兒省略了對它們的詳細說明。 斤 下面參考圖4所示的搬送時間流程圖 送動作進行說明。圖4⑷〜圖4⑷表的傳 妒5铖、Μ π^ + 表不的疋從處理開 雜==間時裝置内部的狀態。為了避免圖示繁 二圖4主要表示的是基板W和基板w的動作,各個 的參考標號僅表示在圖4 (a)巾。而且,基板w 刼^、處理的過程,還分別由參考標號Wl、W2、W3表示。 表示的是按照隨後描述的時間序列,對^板 W貫施傳職的狀態。㈣話職是,表示的是通過如上 =述的動作Χ2,將第-基板W1由真空預備加執腔室ι〇 ,送至電祕理腔f 20處,在實施該傳送後朝向大氣打開 真空預備加熱腔室10,並通過如上所述的動 基板W2由外部裝置7。搬送至真空預備加動熱乍腔 ,結束時的狀態。可以對真空預備加熱腔室10實施真空排 氣,並通過真空預備加熱腔室10實施真空加熱處理、以及 通過電漿處理腔室20實施電漿處理。I30m, 〇c is transmitted in the direction indicated by the arrow in the transport direction. &amp;,, the substrate transfer device 13 and the tilt switching mechanism assembly, 5; its &amp; delivery device 2 and tilting device assembly 22, the base 2 = and the base "feed device n and tilt switching mechanic The 12 mouths have omitted the detailed description of them in the court. The following description will be made with reference to the transfer time flow chart shown in Fig. 4 . In the table of Fig. 4(4) to Fig. 4(4), the state of the device is 5传, Μ π^ + , and the state of the device is changed from the processing error to the ==. In order to avoid the illustration of Fig. 4, the actions of the substrate W and the substrate w are mainly shown, and the respective reference numerals are only shown in Fig. 4(a). Moreover, the process of the substrate w 、 and the processing are also indicated by reference numerals W1, W2, and W3, respectively. It is indicated that the state of the transfer is carried out according to the time series described later. (4) The job is to indicate that the first substrate W1 is sent from the vacuum preparation chamber to the electric cavity f20 by the action Χ2 as described above, and the vacuum is opened toward the atmosphere after the transfer is performed. The heating chamber 10 is prepared and passed through the external device 7 through the movable substrate W2 as described above. Transfer to the vacuum to warm up the hot chamber and the state at the end. Vacuum evacuation of the vacuum preheating chamber 10 may be performed, and vacuum heat treatment may be performed by the vacuum preheating chamber 10, and plasma treatment may be performed by the plasma processing chamber 20.

Ik後可以如圖4 (b)所示,打開門型部件G2,通過 動作將只施過電漿處理的基板W1由電聚處理腔室20 傳送至真空預備加熱腔室10處。這一傳送工序可以如前所 述,按照使基板搬送裝置11、21沿著預定的搬送線傾斜的 15 1309%^,doc 方式進行。 隨後可以如圖4 ( c )所示’通過動作χ2將實施過加 熱處理的基板W2由真空預備加熱腔室1〇傳送至電聚處理 腔室20。這一傳送工序也可以如前所述,按照使基板搬送 裝置11、21沿著預定的搬送線傾斜的方式進行。在通過動 作x2實施搬送後,使門型部件G2閉鎖。使搭載有基板 W1的基板搬送裝置13由傾斜位置返回至水平位置。 隨後可以如圖4(d)所示’在將真空預備加熱腔室1〇 • 的壓力調節至大氣壓力之後打開門型部件G1,通過動作 x4將實施過處理的基板W1由真空預備加熱腔室1〇搬送 出至外部裝置70,並且通過動作χΐ將未實施處理的基板 W3由外部裝置70投入至真空預備加熱腔室1〇。可以在這 時使基板搬送裝置11由傾斜位置返回至水平位置。隨後, 閉合門型部件G1對真空預備加熱腔室10實施真空排氣。 通過真空預備加熱腔室10實施真空加熱處理、以及通過電 漿處理腔室20實施電漿處理。 φ 可以重複進行上述工序,對若干基板W實施連續處理 和回收。而且,圖4表示的是將基板w搭載在拖盤τ上 一起實施傳送的實施形式,然而也可以僅對基板W實施單 獨傳送。 、 、作為本實施形式的基板搬送裝置11、13、21,是分別 ^彳員斜切換機械纽件12、14、22在水平位置(傾斜角度 為)或傾斜位置(傾斜角度為θ),沿搬送面對基板w 或疋保持基板W用的基板托架實施搬送的,所以可以使其 16 13 09223§if.doc 傾斜動作簡單化,在短時㈣完雜群備。*且 需要使用傾斜切換機械組件12、14、22對基 ,After Ik, as shown in Fig. 4(b), the gate member G2 is opened, and the substrate W1 subjected to the plasma treatment only is transferred from the electropolymerization processing chamber 20 to the vacuum preheating chamber 10 by the action. This transfer step can be carried out in a manner of 15 130%, doc which inclines the substrate transfer apparatuses 11, 21 along a predetermined transport line as described above. The substrate W2 subjected to heat treatment may then be transferred from the vacuum preheating chamber 1 to the electropolymerization processing chamber 20 by action χ2 as shown in Fig. 4(c). This transfer step can be carried out in such a manner that the substrate transfer apparatuses 11 and 21 are inclined along a predetermined transport line as described above. After the conveyance is performed by the action x2, the door member G2 is closed. The substrate transfer device 13 on which the substrate W1 is mounted is returned to the horizontal position from the inclined position. Then, as shown in FIG. 4(d), the gate member G1 is opened after the pressure of the vacuum preheating chamber 1〇 is adjusted to atmospheric pressure, and the substrate W1 subjected to the treatment is subjected to the vacuum preheating chamber by the action x4. The substrate W is transported to the external device 70, and the substrate W3 that has not been processed is put into the vacuum preheating chamber 1 by the external device 70 by the operation. At this time, the substrate transfer device 11 can be returned from the tilted position to the horizontal position. Subsequently, the door type member G1 is closed to perform vacuum evacuation of the vacuum preheating chamber 10. The vacuum heat treatment is performed by the vacuum preheating chamber 10, and the plasma treatment is performed by the plasma processing chamber 20. φ The above steps can be repeated, and a plurality of substrates W are subjected to continuous treatment and recovery. Further, Fig. 4 shows an embodiment in which the substrate w is mounted on the tray τ and transported together. However, the substrate W may be transported separately. The substrate transfer devices 11, 13, and 21 of the present embodiment are respectively arranged at the horizontal position (inclination angle) or the tilt position (inclination angle θ) of the mechanical button members 12, 14, 22 respectively. Since the substrate holder for the substrate w or the substrate holding substrate W is transported, the tilting operation of the substrate 13 can be simplified, and the short-term (four) can be completed. * and need to use the tilt switch mechanical components 12, 14, 22 pairs,

施狀態切換,這和採用大型的升降機械組件的場人相比I 可以提高信賴度,並且可以減少設備費用和動力^用。’ 作為本實施形式的真空處理褒置100,設置有能夠在 短日守間裡兀成搬送準備以實施傾斜搬送的基板搬送装复 11、13、21,所以可以在短時間裡對基板w或是保持基 w用的基板托架貫施搬送,從而可以提高連續真空處理 整體吞吐量(throughput)。而且,基板搬送裝置!卜13、 21僅需要實施傾斜驅動,所以可以部分地減小動作所需要 的空間’從而可以通過這種空間分佈,擴大真空處理腔室 内的構成部件、比如說加熱部件、電城線、各種配管設 置所使用的空間。 (第二實施形式) 圖5為表示作為本發明第二實施形式的真空處理裝置 的構成形式用的整體構成示意圖^作為第二實施形式的真 工處理裝置2GG與作為第—實施形式的真空處理裝置1〇〇 相比二不同點僅在於腔㈣構成形式,下面主要對其不同 點進行說明’相同的構成部件已經由相同的參考標號示 出,並省略了對這些部件的詳細說明。 、真空處理裝f 2〇〇將真空處理裝i 1〇〇中的兼用作加 載/卸載腔室的真空預備加熱腔室1G,按照其功能分割為 ,個腔室。換句話說就是,真空預備加熱腔室1()被分割為 载/卸載腔至30和真空預備加熱腔室這兩個腔室。真 I309^,doc 置勘將基板搬送裝置n、13設置在真空預備加 處=至40處,將基板搬送裝置21設置在電漿處理腔室加 基板w的傳送過程是按照箭頭χ5、χ;ι、χ2、χ3 。可:通過加載/卸載腔室3G將未實“ &quot; 才又入至真空預備加熱腔室40,並且由真空 =熱空室40處對處理後的基板〜實施回收 Ϊ以IT在朝向大氣開放和真空密閉狀態間實施^ 熱腔室^H板:貫施搬入搬出處理。在真空預借加 可以在直空狀能土下n亍的加熱處理和搬入搬出處理, 3=可也不需要實伽^ ;Ϊ=Γ的基板搬繼u、㈣的作用和效 果均與通過苐一實施形式說明過的相同。 (第二實施形式) 的構明ί;實施形式的真空處理裝置 空處理裝置為第三實施形式的真 f 100'200 弟—實施形式的真空處理裝 搬送路徑,下面主3 =於腔室的構成形式和基板的 =_的參考標號示出,並二”對=;; 真空處理聚置3〇0將真空處理教置200中的加載/卸載 18 if.doc 腔室30,按照其功能分割為兩個腔室。換句話說就是,加 載/卸載腔室30被分割為將未實施處理的基板…搬入至裝 置内部用的加載腔室50,和將處理後的基板^搬出至裝 置=部用的卸載腔室60這兩個腔室。加載腔室5Q和卸載 腔至60均可以在朝向大氣開放和真空㈣狀態間實施切 換。真空處理裝置300將基板搬送裝置n、13設置在真命 預備加熱腔室40 &amp;,將基板搬送裝置21言是置在電敷處^ 腔室20處。State switching, which improves reliability and reduces equipment costs and power consumption compared to those who use large lifting machinery components. The vacuum processing apparatus 100 of the present embodiment is provided with the substrate transporting packages 11, 13, and 21 which can be transported in a short-term manner to perform the tilting conveyance, so that the substrate w or the substrate w can be in a short time. The substrate holder for holding the base w is conveyed, and the overall throughput of the continuous vacuum processing can be improved. Moreover, the substrate transfer device! Since only the tilt drive is required, the space required for the operation can be partially reduced, so that the components in the vacuum processing chamber, such as the heating member, the electric city line, and various piping can be enlarged by such spatial distribution. Set the space used. (Second embodiment) Fig. 5 is a view showing the overall configuration of a vacuum processing apparatus according to a second embodiment of the present invention. The turret processing apparatus 2GG as a second embodiment and the vacuum processing as a first embodiment The device 1 〇〇 differs from the cavity (4) in the form of a cavity. The same points are mainly described below. The same components are denoted by the same reference numerals, and a detailed description of these components is omitted. The vacuum processing unit f 2 〇〇 is a vacuum pre-heating chamber 1G which is also used as a loading/unloading chamber in the vacuum processing apparatus, and is divided into a chamber according to its function. In other words, the vacuum preheating chamber 1 () is divided into two chambers, a loading/unloading chamber to 30 and a vacuum preheating chamber. True I309^, doc surveying the substrate transporting devices n, 13 at the vacuum pre-filling place = to 40, the substrate transporting device 21 is disposed in the plasma processing chamber plus the substrate w is transported according to the arrow χ 5, χ; ι, χ 2, χ 3 . Yes: the loading/unloading chamber 3G will not be re-entered into the vacuum preheating chamber 40, and the processed substrate will be recycled from the vacuum=hot space 40 to be opened to the atmosphere with IT. The heat chamber is installed between the vacuum chamber and the vacuum chamber. The heat chamber is used to carry out the loading and unloading process. The vacuum pre-borrowing can be performed under the direct-empty energy and the loading and unloading process is performed. The action and effect of the substrate transfer u and (4) of gamma; Ϊ = 均 are the same as those described in the first embodiment. (Second embodiment) The structure of the vacuum processing device of the embodiment is The vacuum processing load transfer path of the third embodiment is the vacuum processing load transfer path of the embodiment, the lower main 3 = the configuration form of the chamber and the reference mark of the substrate = _, and the two "pairs"; Processing the stacking 3〇0 will load/unload the 18 if.doc chamber 30 in the vacuum processing teach 200, dividing it into two chambers according to its function. In other words, the loading/unloading chamber 30 is divided into a loading chamber 50 for carrying out the processing of the substrate, and a loading chamber 50 for carrying out the processing, and carrying out the processed substrate to the unloading chamber 60 for the device=part. These two chambers. Both the loading chamber 5Q and the unloading chamber 60 can be switched between opening to the atmosphere and vacuum (4). The vacuum processing apparatus 300 sets the substrate transfer apparatuses n and 13 in the true-preparation heating chamber 40 &amp; and places the substrate transfer apparatus 21 in the electric-electrode chamber 20.

土槪w的傅送为為兩個系統,即按照箭頭χ5、χ卜 =、x7、X請示路徑f麵傳送,和按照箭頭χ5、χΐ,、 :逆二=權實施的傳送。加載腔室50處的基板 ^裝置51可以按崎頭績示的方向實施 真空加熱腔㈣絲錢送裝置u、^的 、,们間貫施過渡,採用這種構成形式,可以 =程一分為兩個系統。由基板搬送裝置u朝向^板搬送 置21實施的傾斜搬送作業,是與第一和—土 7 '、、The transfer of the bandit w is two systems, that is, according to the arrow χ5, χ卜 =, x7, X, the path f plane is transmitted, and the transmission is performed according to the arrow χ5, χΐ, , : inverse two = right. The substrate device 51 at the loading chamber 50 can perform the vacuum heating chamber (4) in the direction of the performance of the head of the vacuum, and the transition between the wires and the feeding device u, ^, and the configuration can be used. For two systems. The tilting conveyance operation performed by the substrate transfer device u toward the board transport unit 21 is the first and the soil 7',

:;如f頭X3,所示的搬送動作作業,: m _送方向不同’然而基板搬送裝ί 過的相^和效果,均與通過第—和第二實施形式說明 或保過搬送面對被處理基板 送機械缸件(:心念:5乇木貫施保持並實施搬送的搬 和的上 如_ 5和搬送軋輥R等箄槿η, 水平狀態和相對該水平狀態呈預定傾斜角度的傾 19 1309%_doc 70 :外部裝置 71、72 :基板搬送裝置 80 :驅動控制回路 100、200、300 :真空處理裝置 A、B :方向 C :轉動軸 D卜D2、D3 :圓弧 E卜E2、E3 :位置 G卜G2 :严,型部件 Η:加熱部件 U、L2、L3 :搬送線 P : RF電極 R :搬送軋輥 ΊΠ、Τ2、Τ3 :狀態切換軸 W、W1〜W3 :基板(被處理物) xl〜χ8 :傳送動作(動作) yl、y2、y3 :狀態切換動作 z:升降動作 Θ :傾斜角度 22:; as for the head X3, the transport operation shown: m _the direction of the transfer is different, but the phase and effect of the substrate transport are both described and saved by the first and second embodiments. The substrate to be processed is sent to the mechanical cylinder (: mind: 5 乇 贯 保持 保持 保持 保持 上 和 和 和 和 和 和 和 和 和 和 和 , , , , , , , , , , , , , , , , , , , , , , Tilting 19 1309%_doc 70 : External devices 71, 72 : Substrate transfer device 80 : Drive control circuit 100 , 200 , 300 : Vacuum processing device A , B : Direction C : Rotation axis D D D2 , D3 : Arc E E E2 , E3 : Position G Bu G2 : Strict, type member Η: Heating parts U, L2, L3 : Transport line P : RF electrode R : Transfer roll ΊΠ, Τ 2, Τ 3 : State switching axis W, W1 W W3 : Substrate Processing) xl~χ8 : Transfer action (action) yl, y2, y3 : state switching action z: lifting action Θ : tilt angle 22

Claims (1)

13 09221 _u 17138pifl.doc 9號中文專利範圍無劃線修 正本 修正曰期:98年1月17曰 B, 十、申請專利範圍: L種基板搬送裝置,其特徵在於所述基板搬送裝置 包括: 通^搬送面對被處理基板或保持前述被處理基板用 、土托架實施保持並實施搬送的搬送機械組件;以及 ,水平狀態和相對該水平狀態朝搬送方向呈預定傾 =又的傾斜狀態間對前述搬送面實施切換用的傾斜切 機械組件; 而且别述搬送機械組件在前述搬送面呈水平狀熊或 傾斜狀㉙下㈣述被處理紐或前述基板托架實施搬送: 2·種真空處理裝置,其特徵在於所述真空處理裝置 包括· 對被處理基板實施連續真空處理用的兩個或更多個 相互連接著的處理腔室;以及 別設置在前述至少兩個處理腔室處的、如中請專利 乾圍第1項所述的基板搬送裝置; 装署而置在前駐少油4賴线的各基板搬送 ,按照其搬送面大體朝—财向坡度傾斜以形成一個 傾斜搬送面的形式構成。 / 3.如申請專利麵第2項所述之真空處理裝置,宜特 ^於包括驅動控制回路’使設置在前述至少兩個處理腔 j的前述基板搬送裝置料個搬送面,大體朝—個方向 坡度傾斜以形成一個傾斜搬送面。 4.一種真空處理裝置,其特徵在於包括: 23 對被處理基板實施連續真空處理用 相互連接著的處理腔室;以及 飞更夕個 分別設置在前述至少兩個處理腔室處的、如申請專 範圍第1項所朗基板搬送裝置,其中設置在前述至 個處理腔室處的各基板搬送裝置,按照其搬送面大體朝一 個方向坡度傾斜以形成一個傾斜搬送面的形式構成; 將前述被處理基板或前述基板托架投入至實施 真空處理㈣處理腔室處,且能夠在朝向大朗放和直空 密閉間切換的加載腔室;以及 、 將前述被處理基板或前述基板托架由實施最後真空 處理用的處理腔室處作為處理後的基板實施回收,且能= 在朝向大氣開放和真空密閉間切換的卸載腔室。 5.—種真空處理裝置,其特徵在於所述真空處理 包括: 對被處理基板實施連續真空處理用的兩個或更多個 相互連接著的處理腔室; 分別設置在前述至少兩個處理腔室處的、如申請專利 範圍第1項所述的基板搬送裝置,其中設置在前述至少兩 個處理腔室處的各基板搬送裝置,按照其搬送面大體朝一 個方向坡度傾斜以形成一個傾斜搬送面的形式構成; 驅動控制回路,使設置在前述至少兩個處理腔室處的 前述基板搬送裝置的各個搬送面,大體朝一個方向坡度傾 斜以形成一個傾斜搬送面; 又 將前述被處理基板或前述基板托架投入至實施最初 24 !3〇92^8ρίί1,οε 真空處理用的處理腔室處,且能夠在朝向大氣開放和真空 密閉間切換的加載腔室;以及 將前述被處理基板或前述基板托架由實施最後真空 處理用的處理腔室處作為處理後的基板實施回收,且能夠 在朝向大氣開放和真空密閉間切換的卸載腔室。 6. 如申請專利範圍第4項或第5項所述之真空處理裝 置,其特徵在於前述處理腔室兼用作前述加載腔室或卸載 腔室。 7. 一種真空處理裝置,其特徵在於包括: 對被處理基板實施連續真空處理用的兩個或更多個 相互連接著的處理腔室;以及 —分別設置在前述至少兩個處理腔室處的、如申請專利 範圍第1項所述的基板搬送裝置,其中設置在前述至少兩 個處理腔至處的各基板搬送裝置,按照其搬送面大體朝一 個方向坡度傾斜以形成一個傾斜搬送面的形式構成;以及 將則述被處理基板或前述基板托架投入至實施最初真 二處理用的處理腔室處,並且將前述被處理基板或前述基 板托架由實施最後真空處理用的處理腔室處逆向搬送至實 施最初真空處理用的處理腔室處,作為處理後的基板實施 回收,且能夠在朝向大氣開放和真空密閉間切換的過渡腔 室。 &amp;一種真空處理裝置,其特徵在於包括·· 對被處理基板實施連續真空處理用的兩個或更多個 相互連接著的處理腔室; 25 130922§_.doc 分別設置在前述至少兩個處理腔室處的、如申請專利 範圍第1項所述的基板搬送裝置,其中設置在前述至少兩 個處理腔室處的各基板搬送裝置,按照其搬送面大體朝一 個方向坡度傾斜以形成一個傾斜搬送面的形式構成; 驅動控制回路’使設置在前述至少兩個處理腔室處的 前述基板搬送裝置的各個搬送面,大體朝一個方向坡度傾 斜以形成一個傾斜搬送面;以及 將前述被處理基板或前述基板托架投入至實施最初真 空處理用的處理腔室處,並且將前述被處理基板或前述基 板托架由貫施最後真空處理用的處理腔室處逆向搬送至實 施最初真空處理用的處理腔室處,作為處理後的基板實施 回收,且_在朝向大氣開放和真空密閉間切換的過渡腔 室。 9·如申請專利範圍第7項或第8項所述之真空處理裝 置,其特徵在於前述處理腔室兼用作前述過渡腔室。 2613 09221 _u 17138pifl.doc No. 9 Chinese Patent Range No slash correction This revision period: January 17 98 B, X. Patent application scope: L type substrate transfer device, characterized in that the substrate transfer device includes: And transporting the transporting machine assembly facing the substrate to be processed or holding the substrate to be processed and holding the soil carrier; and the horizontal state and the tilting state between the horizontal state and the horizontal direction toward the transport direction The inclined cutting machine assembly for switching the conveying surface; and the conveying mechanism unit is horizontally beared or inclined 29 on the conveying surface (4): the processing button or the substrate holder is conveyed: 2. Vacuum treatment The apparatus, characterized in that the vacuum processing apparatus comprises: two or more interconnected processing chambers for performing continuous vacuum processing on the substrate to be processed; and other disposed at the at least two processing chambers, For example, please refer to the substrate transfer device described in item 1 of the patent stipulation; and transfer the substrates placed on the front line of the small oil 4 line, according to Substantially toward the conveyance surface - Choi inclined slope form to form a conveyance surface inclined configuration. / 3. The vacuum processing apparatus according to the second aspect of the patent application, comprising: a drive control circuit for causing the substrate transfer device disposed in the at least two processing chambers j to have a transfer surface, substantially facing each other The direction slope is inclined to form an inclined conveying surface. A vacuum processing apparatus, comprising: 23: a processing chamber for performing continuous vacuum processing on the substrate to be processed; and a plurality of processing chambers respectively disposed at the at least two processing chambers, such as an application The substrate transfer apparatus of the first aspect of the present invention, wherein each of the substrate transfer apparatuses provided in the processing chambers is configured such that the transfer surface is inclined substantially in one direction to form an inclined transport surface; Processing the substrate or the substrate holder into a loading chamber for performing a vacuum processing (4) processing chamber, and capable of switching between a large displacement and a straight space sealing; and implementing the substrate to be processed or the substrate holder Finally, the processing chamber for vacuum processing is recovered as a processed substrate, and can be = an unloading chamber that is switched between opening to the atmosphere and vacuum sealing. 5. A vacuum processing apparatus, characterized in that said vacuum processing comprises: two or more interconnected processing chambers for performing continuous vacuum processing on a substrate to be processed; respectively disposed in said at least two processing chambers The substrate transfer device according to the first aspect of the invention, wherein each of the substrate transfer devices provided at the at least two processing chambers is inclined in a direction substantially toward one direction to form a tilt transfer. Forming a surface; driving the control circuit such that each of the conveying surfaces of the substrate conveying device disposed at the at least two processing chambers is inclined at a slope in a general direction to form an inclined conveying surface; and the substrate to be processed or The substrate holder is placed in a processing chamber that performs the first processing process for vacuum processing, and is capable of switching between opening to the atmosphere and vacuum sealing; and the substrate to be processed or the aforementioned The substrate holder is implemented as a processed substrate at the processing chamber for performing the final vacuum processing. , And the unload chamber capable of being switched between closed and vacuum opened to the atmosphere. 6. The vacuum processing apparatus of claim 4, wherein the processing chamber also serves as the loading chamber or the unloading chamber. 7. A vacuum processing apparatus, comprising: two or more interconnected processing chambers for performing continuous vacuum processing on a substrate to be processed; and - respectively disposed at said at least two processing chambers The substrate transfer apparatus according to claim 1, wherein each of the substrate transfer apparatuses provided at the at least two processing chambers is inclined in such a manner that the transport surface is substantially inclined in one direction to form an inclined transport surface. And arranging the substrate to be processed or the substrate holder to be processed into a processing chamber for performing the first true processing, and the processing substrate or the substrate holder is subjected to a processing chamber for performing a final vacuum processing The reverse transfer is carried out to the processing chamber for performing the initial vacuum processing, and is recovered as a processed substrate, and is capable of being transferred to the transition chamber between the atmosphere opening and the vacuum sealing. &amp; A vacuum processing apparatus characterized by comprising: two or more interconnected processing chambers for performing continuous vacuum processing on a substrate to be processed; 25 130922§_.doc are respectively disposed in at least two of the foregoing The substrate transfer apparatus according to the first aspect of the invention, wherein each of the substrate transfer apparatuses provided at the at least two processing chambers is inclined in a direction substantially toward one direction to form a a configuration of the inclined transfer surface; the drive control circuit 'slanting the respective transfer faces of the substrate transfer device provided at the at least two processing chambers to a slope in a general direction to form an inclined transfer surface; and processing the aforementioned The substrate or the substrate holder is placed in a processing chamber for performing the initial vacuum processing, and the substrate to be processed or the substrate holder is reversely transported from the processing chamber for the final vacuum processing to the first vacuum processing. At the processing chamber, the recovery is carried out as a treated substrate, and _ is open to the atmosphere and true A transition chamber that switches between airtight closures. 9. The vacuum processing apparatus of claim 7 or 8, wherein the processing chamber also serves as the transition chamber. 26
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