TWI305672B - - Google Patents

Description

1305672 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a wafer support which is formed by ruthenium, and is supported on the wafer. The wafer for supporting the heat treatment wafer 埶 _ heat treatment jig, in particular, the size of w attached to the wafer after the heat treatment of (4) is changed to an eyebrow. Further, the present invention relates to a wafer after heat treatment of the attached stone which does not affect the degree of exposure. There are 7 [Prior Art] Various heats are performed in the wafer process, as shown in the figure. In the heat treatment, the wafer 4 is plated! Supported and housed in the furnace, l' is formed by mutually opposing slabs 10 and 20, and a plurality of struts 2 connecting the ends of the sill and the bottom plate 20. A plurality of wafer support portions 3 projecting in the right-angle direction are formed in each of the phases. The number and position of the wafer support portion 3 between the two and two are corresponding. The wafer edge portion is supported by the wafer support portion 3. - However, in the heat treatment, a part of the surface of the wafer support portion 3 has a problem of being evaluated on the inner surface of the wafer 4. The plurality of wafer support portions 3 are slightly bent. The closer to the end portion of the wafer support portion 3, the more the third name is. In such a state, the portion of the wafer inner surface that is in contact with the wafer support portion 4 side is fused with the wafer support member. Heart: Place such a wafer on the stage of the exposure machine.] Since the inner surface of the wafer is fused by the two sides, the relative height of the wafer surface of the wafer is changed. Thus, the exposure position of the Japanese yen is from the exposure machine 7054-7705-pp 1305672 m to the focus position of the exposure, so the sheet is melted in the wafer is not good because: 'prevent the sheet and the inner surface of the wafer Technology, face down = cleverness. Patent Document 1 listed below relates to the formation of m crystal (tetra) on the surface of a quartz plate. Here, although (4) polycrystalline ♦ is a plate, it is considered to be effective, but it is considered to be problematic on the cost side. The wafer support material is in contact with the circle, and the crystal is used as a plate. Yoshitong s is produced by using a sulphide as a wafer support unit and a tricycle (four) formed on a wafer support. Then, the wafer support portion is corroded in advance by an acid solution for the purpose of removing the heavy metal adhering to the surface of the polycrystalline stone and the deformation of the bridge. Further, as a technique for etching the wafer support portion 2, for example, the patent document 2 disclosed in the following Patent Document 2 aims to reduce the slip caused by the contact between the wafer and the wafer support portion. (4) The solution is etched = the wafer support portion formed by the Shi Xi block, and the surface roughness root roughness RMS of (4) is formed. [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. There is a problem with the technique of the literature. At temperatures exceeding 1000 tons, there is a possibility that the quartz 7054-77〇5-pp 6 1305672 plate itself is deformed due to the self-weight of the wafer. Moreover, it is made by Shi Tianshi and Fujing. Thermal expansion system, 'so that the compound crystal 9 has the possibility of peeling off from the wafer support portion of the quartz L and 'in the high temperature environment of the (10) generation, if the weight of the wafer is applied to the -round support portion, then the association will be Melting in the inner surface of the wafer. Therefore, the problem of poor exposure is very difficult. In the heat treatment of more than 100 generations of high temperature, it is difficult to remove the (4) melted on the inner surface of the wafer. Therefore, now, how to make the inside of the wafer In the meantime, the technology of Patent Document 2 is reviewed from the viewpoint of reducing the amount of swarf that is fused to the inner surface of the wafer. For example, it is considered that the shi shi block described in Patent Document 2 is a single Crystallization In the case of Sangshe, the crystal orientation of the crystallization is the same, and the crystallization 2 rule is correctly arranged. Therefore, if the shi shi is peeled off from the wafer support of the single crystal, the peeling is not specified. In the case of the inner surface of the wafer, the size of the wafer is small and the size is small. In some cases, there is a possibility that the inner surface of the wafer is fused. Therefore, the technique of Patent Document 2 may have a defect of exposure. The invention is made in such a way that, regardless of the heat treatment in the field of the degree, it is possible to reduce the exposure failure when the wafer is exposed to the inside of the wafer. [Means for Solving the Problem]: The invention relates to a jig for heat treatment of a wafer, which comprises a wafer for supporting heat treatment on the Ba circular support portion formed by ruthenium, wherein: The circular support portion is etched by a solution formed by a polycrystalline silicon crucible. The second invention is a jig for heat treatment of a wafer, which is formed by a stone eve.

Wafer support for 7054-7705-PF 7 1305672, which is characterized by: The wafer support unit supports the heat-treating wafer, and the spar is used to reduce the amount of the support from the use of the shovel. Alternatively, in the f 2 invention, the wafer supporting portion of the wafer supporting portion is corroded and characterized. 5 children's table / the first invention about the first Chu q & n holding section. If the wafer formed by the polysilicon is grown. ^ When the 糸 solution is corroded, the surface roughness of the wafer support portion becomes the average roughness Ra".曰 支 支 二者 「 「 「 「 「 「 「 「 「 「 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术 算术An adjacent boundary with mutually different orientations. A crystal group is a grain. The crystal grain boundary between adjacent grains, the size of the grain is called the crystal grain boundary of the crystal grain surface. Therefore, it should be: it happens in the sapphire and can be smashed / wa] The swarf does not change very much, j is controlled below the established size. More: 3⁄4 polycrystalline stone is used粒粒; ^胜Kl丨, / T 所 generated, then the pile 仫 of the polycrystalline 矽 is particularly small. And if the crystal, then, the surface of the wa fork symbol is corroded by acid solution, heavy metal from the wafer support When the part is removed, the shape is corrected. If the processing of the wafer is used in the heat treatment of the wafer of the third invention, it will adhere to the inner surface of the wafer. The height of the inner surface in the vertical direction is the fourth invention, which is a heat-treated wafer, characterized in that

7054-7705-PF 8 1305672 The height of the inner surface of the inner surface of the inner surface of the inner surface is 3/zm. /Bingdie 5 was invented as a heat-treated wafer, characterized in that the surface of the inner surface of the wafer after heat treatment supported by the alkali 糸 'this liquid is used to adhere to the inner surface of the wafer. The height of the inner surface to the vertical direction of the inner side: within. According to a fourth aspect of the invention, there is provided a wafer after heat treatment in which the inner surface of the crumb deposited on the inner surface of the wafer is within a height of 3 (four) in the vertical direction. In the case of the present invention, it is possible to reduce the exposure failure caused by the shift of the focus position of the exposure machine which exposes the component pattern or the like to the exposure position on the wafer. [Effect of the Invention] According to the present invention, when the wafer support portion has a large surface roughness (arithmetic mean roughness) and the wafer support portion is formed of a small particle size of a ceramsite, the heat treatment is followed by melting. The crumbs on the inside of the wafer will be smaller than ever. If this degree is adjusted, the exposure failure during wafer exposure can be reduced. [Embodiment]

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present embodiment, the wafer heat treatment jig is used as a plate. Further, in the following description, the """ 1" is used in comparison with the large and small performances, and this embodiment is compared with the general prior art. The appearance of this embodiment is the same as that of Fig. 1. First, the material regarding the wafer support portion 3 will be described. The material of the wafer support portion 5 is a polysilicon. The polycrystalline lanthanum is formed by adjacent single crystal groups having mutually different orientations. Here, one crystal group is considered to be one crystal grain. The boundary between the grains of adjacent 7054-7705-PF 9 1305672 is called "crystal grain boundary", and the size of the crystal grain is called "crystal grain size" or simply "particle size". The stripping of Shi Xi is mainly caused by the grain boundary of the surface of the polycrystalline stone. Therefore, the stripped stone genus does not become particularly large and can be controlled below a given size. Since all of the crystals of the single crystal stone are in the same orientation, no crystal grains exist. If we look at it from a different perspective, the single crystal stone can be said to be all grains. This is because of the "peeling of Shi Xi", the difference between the single crystal stone and the double crystal stone is very different. Since there is no crystal grain in the single crystal, the peeling is not specified. That is to say, the single crystal stone eve of the genus is a variety of sizes. On the other hand, as mentioned above, the peeling point of the polycrystalline stone is the grain boundary of the surface layer. Since this 'Crystalline Shishi's genus can be said to be smaller than the single crystal 矽. The plate material of the present embodiment is a polycrystalline stone, and the polycrystalline stone is formed using a stone sap. The particle size of the polycrystalline stone formed by the use of Shi Xijia is small. For comparison, the particle size of the cerium formed by methane and the granules produced by the use of trioxane are hard. Fig. 2 (4) is a photograph of the surface of a polycrystalline silicon produced by cerium methane, which is photographed from the opposite direction. [Fig. 2 (8) will use the surface of the strontium stone formed by the chlorous sulphate. A photo taken from its opposite direction. The stereoscopic optical microscope or scanning electron microscopy _) is used to measure the granules as shown in Fig. 2 (4). The particle size of the cermetite shown in Fig. 2 is '5'. Zmx20//m. If the measurement results of the comparative particle size and Fig. 2 (4) are found, the use of yttrium methane to generate 葙曰 ^ ^ 木 木 木 木 木 木 木 木 木 木 木 木 木 木 木 木 木 木 木 木 木 木 木 木 木

7054-7705-PF Ϊ305672 The surface of the polycrystalline stone is dense and the particle size is small. Next, the surface roughness of the wafer support portion 3; such as "-" will be described. In the shape of this embodiment, the "surface roughness #*" is the "arithmetic mean roughness Ra" of the height of the volts. "Arithmetic average crude production in the socialist τ _ "Zudu Ka" refers to the index indicating the surface roughness in JIS normalization. The wafer support portion 3 of the present embodiment is made of a polycrystalline ruthenium formed by using 矽f alkane. The surface of the substrate is etched with an acid solution and then etched with an alkali solution. The surface roughness of the polycrystalline ruthenium etched with the alkali solution is larger than that of the kerocene ruined with an acid solution. For example, if the surface roughness is above this level, the swarf that melts on the inner surface of the wafer will be smaller than the previous one. Fig. 3(a) is a view showing the surface roughness of the wafer support portion of the present invention, and Fig. 3(b) is a view showing the surface roughness of the wafer support portion of the prior art. In the cross-section of Fig. 3 (a) and (b) where the wafer supporting portion is cut in a plane perpendicular to the surface thereof, the undulating state of the surface portion of the wafer supporting portion is represented by a waveform. Fig. 3(a) shows the surface roughness of the wafer support portion which is etched with an alkali solution after etching with an acid solution, and the data is the average roughness Ra = 1. 351 # m Maximum height Ry=ll.〇78/zm The waveform of Fig. 3(b) shows the surface roughness of the wafer support portion etched with the acid solution, and the data is the arithmetic mean roughness Ra= 〇. 639# m maximum height Ry=5. 〇i4 compares the waveforms of (a) and (b) of Fig. 3 with the arithmetic mean roughness of the two ^054-7705-ρρ 11 1305672 b maximum height Ry' is found by (4) The solution slag makes the surface roughness & large. Further, the "maximum height Ry" is the same as the "arithmetic mean roughness h", and is an index indicating the surface roughness in JIS. ...the surface roughness of the wafer support portion 3 is as large as ever, and even if it is rarely s, it can be used to obtain effect. __Seven work, the surface roughness is also considered to be better, 'according to the inventors' wafer support 3 surface roughness will be! Methane generated by the use of methane to alkali solution If the degree of corrosion is even if the swarf is melted on the inner surface of the wafer, the exposure at the time of wafer exposure can be reduced. If the surface of the wafer support portion 3 is thick, the surface of the wafer support portion 3 will be burned if If the degree of rotten money is more than the above, it may be other treatment methods. 必须 The rot of the solution 'must pay attention to the following points. On the surface of the polycrystalline support ==: round support 3, in order to remove and correct heavy metals The eclipse is eroded by the acid strontium solution, but it is important to carry out the rot of the alkali solution if it is carried out. The reason is that the third 验 = inspection is attached to the crystal. The surface of the circular support part 3 is heavy; the part is diffused, and there is an important cause of wafer contamination. 2 If the acid is rotted, the wafer support is not rough. Degree, and the thickness of the surface of the acid core, by the corrosion of the alkali solution and the acid solution, the known solution can be In order to compare the case where the wafer is supported by the board of the present embodiment and the wafer is supported by the conventional board, the pattern diagram is used to illustrate the 4th circle of the 7054-7705-2^12 1305672 (a). The figure shows the state in which the wafer is supported by the wafer support unit of the present embodiment, and Fig. 4 (7) shows the state of the wafer and the wafer support portion after heat treatment in the fourth figure (4). Fig. 5 (4) shows a diagram in which the wafer support is not supported by the conventional wafer support unit, and Fig. 5 (8) shows wafer and wafer support after heat treatment in the state of Fig. 5 (a). Figure of the situation of the Ministry. The interview of the scorpion 4 to the 丄曰J circle in the 4th and 5th, the wafer support is indicated by a section cut perpendicular to the plane of the surface. In the case where the surface roughness of the wafer support portion 3 is large as shown in (a), the surface of the wafer support portion 3 has a large number of undulations, and the ridge portion and the sedimentation portion are small. Therefore, the wafer 4 is in the wafer support portion. When supporting 3, the wafer support portion 3: the surface and the inner surface of the wafer 4 are in close contact with each other, and the contact area of each point is small. In the state of heat treatment, the surface of the wafer support portion 3 is fused to the inner surface of the wafer 4. Since the surface of the wafer support portion 3 and the inner surface of the wafer 4 have a small contact area, the surface of the wafer 4 is fused to the inner surface of the wafer 4. 5 is small. And 'Because the particle size of the polycrystalline stone is small, the fused stone genus 5 will become small. On the other hand, as shown in Fig. 5(a), if the wafer support portion 3 When the surface roughness is smooth, the undulations on the surface of the wafer support portion 3, the ridge portion and the sink portion are large. Therefore, when the wafer support portion 3 is supported, the wafer is supported. The support portion 3 has a large contact area between the surface and the wafer 4, and the inner surface is in close contact with each other. When the heat treatment is performed in this state, the surface of the crystal support portion 3' is fused to the inner surface of the dome 4'. Since the contact area of the inner surface of the original wafer support portion 3' and the wafer 4 is large, the shoulder 5' of the inner surface of the wafer 4' is large. In addition, since the particle size of the polycrystalline stone eve 7054-7705-PF 13 1305672:: the fused hair 5' will also become large. Next, the results of comparative experiments on the actual results of the present inventors are explained. The present invention and the prior art for the heat treatment are designed to reduce the formation of the capture position inside the wafer, and the wafer 2::: is trapped and processed in the wafer. Therefore, the heat treatment of the core of the present embodiment = treatment (tempering) is used. The high-temperature heat treatment system is used to test the board. Figure 6 is a vertical heat treatment furnace shown in Fig. 6. Figure. A gas-and-path 32 for introducing an atmosphere gas into the furnace is provided on the upper portion of the furnace 30 in the longitudinal heat treatment furnace of the heat treatment furnace. The gas supply path 32 is in the system. The inside of the furnace 30 is not provided. The gas supply of the present invention is as follows: The path is small. And the body ^ is coarse, and the surface of the polycrystalline stone is 矽' and the surface is alkali corrosion. The treatment of this embodiment is accommodated in the vertical heat treatment furnace shown in Fig. 6 and the vertical heat treatment furnace shown in Fig. 6. These two: The high temperature heat of the wafer is used under the conditions of (10). The wafer obtained in the present embodiment and the high temperature heat of the conventional plate are shown in Fig. 7, and the analysis results of the chips deposited on the inner surface of the wafer are shown. Shown in the figure g. Fig. 7(a) shows a photograph taken from the inner surface of the heat-treated wafer by the wafer support portion of the present invention, and photographs taken from the opposite direction of the inner surface, and Fig. 7 (8) is supported by the conventional wafer. The part supports the inner surface of the heat-treated wafer 7054-77〇5-pp 14 Ϊ305672' from the inner surface to pattern the photographed image of Fig. 7(a). Figure 8 (a) Schematic diagram of the pattern. Figure 9 = Figure '8th figure (1) is the 7th figure (8) - the circle ... exists... 22nd =: From the 7th figure (a), (b) of the prior art wafer support part 0 3 It was found that compared to the heat treatment of 62, Ethereum aa, the layer of germanium on the wafer 52. . Wafer Support Section Figure 9 shows the vertical direction of the inner surface of the crucible, that is, the height from the wafer. The data from the chip 62 of Fig. 9(a) is a histogram of height. This height refers to the accumulation of the inner surface in the thickness direction of the wafer, (b), relative to the fusion of the wafer 5 2, the number of points of compensation n = 1 〇 8, the maximum value of the south, the average degree of melting in the wafer evaluation point number

Max: 6" m

AveU "m 51 of the second chip 61 data is N = 32 height maximum Max = 3 in m south average Ave = i only, • 0 Ai m Thus, it can be seen that compared to the chipping on the wafer 52 The height of 62 is average, and the height of the chips 61 melted on the wafer 51 is on average lower. From the above results, it can be said that the adhesion according to the present invention is

7054-7705-PF 15 J305672 The high sound level of the inner surface of the wafer is the best. "To prevent the wafer from being poorly exposed," the surface roughness of the wafer support portion. (Arithmetic flat head, the preparation of the killing system M small particle size of the composite crystal formed, = after the fusion of the inner surface of the wafer to change will be smaller than before. As long as ... μ degree, reduce the exposure of the wafer exposure Further, in the present embodiment, although the accompanying port and the port are subjected to heat treatment at about 1200 ° C (4), the same heat treatment as in the case of low temperature or high temperature can be obtained. The effect of the drawing is as follows: Figure 1 is a diagram showing the pattern of the board supporting the wafer. Figure 2 (a) shows the wafer support of the present invention from its surface. 2(6) '%, slice' Figure 2 (8) is a photograph of a prior art wafer mounted on the opposite direction of the surface of the wafer. Figure 3 (a) shows the wafer support portion of the present invention. Table S' Figure 3 (8) shows the table of the prior art wafer support: a graph of the thickness. Figure 4 (a) is a table In the diagram of the wafer support portion of the present invention, "Fig. 8 shows a state in which the wafer and the wafer support portion after heat treatment are carried out in the state of Fig. 4 (4). Fig. 5 (4) Figure 5 is a diagram showing the state of the conventional wafer support unit. Fig. 5 (8) shows the wafer and wafer support unit in the hot state of 7054-7705-PF 16 1305672. Fig. 6 is a vertical heat map of a jig for heat treatment of a wafer. The muscle core, Fig. 7 (a), supports the inner surface of the wafer after the wafer support portion of the present invention. 'Photograph taken from the opposite direction of the inner surface, Fig. 7(b) is a photograph taken from the inner surface of the heat-treated wafer by the conventional wafer support portion, and photographed from the opposite direction of the inner surface. Fig. 8(a) is a pattern in which Fig. 7 (&) is modeled. Fig. 4(4) is a pattern diagram in which Fig. 7(b) is modeled. Fig. 9(4) shows Fig. 7(a) The height and number of occurrences of the crumbs present on the inner surface of the wafer are shown in Fig. Q(m), Fig. 9(b) shows the crumbs present on the inner surface of the wafer as shown in Fig. 7) Diagram of height and number of occurrences [Description of main component symbols] 1 plate 2 pillars 3, 3 ' Wafer support parts 4, 51, 52 Wafers 5, 5', 61, 62 Chips 10 Sky plate 20 Base plate 30 Furnace 31 Pedestal 3 2 gas supply path 7054-7705-PF 17

Claims (1)

Amendment date: 97.9.16 1. A fixture for heat treatment of wafers, which has a wafer support portion of the material to support the wafer for heat treatment on the wafer support portion, and the patent scope revision of 5^^2193: Ten Patent application scope: The wafer support portion is formed by a polycrystalline stone, and is corroded by a test solution. A jig for heat treatment of a round heat treatment, comprising a wafer support portion formed of tantalum, and supporting a heat treatment wafer on the wafer support portion, wherein: the wafer support portion is made of using Shiqi methane The resulting polycrystalline stone is formed in the evening and is corroded with an alkali solution. 3. The jig for heat treatment of a wafer according to the first to second aspects of the invention, wherein the wafer support portion may be corroded by an acid solution. 4. The heat-treated wafer is heat-treated so that the height of the inner surface of the inner surface of the wafer attached to the inner surface of the wafer is within the vertical direction. 5. A heat-treated wafer, the result of heat treatment of the inner surface of the wafer supported by the double crystal etched by the alkali solution, is such that the height of the inner surface of the wafer is within the vertical direction of the inner surface. 7054-7705-PF1 18 1305672 VII. Designated representative map: 丨—_— (1) The representative representative figure of this case is: (4). (2) Brief description of the symbol of the representative figure: 3 Wafer support part 4 Wafer 5 矽 8. In the case of chemical formula, please disclose the chemical formula that best shows the characteristics of the invention: None 7054-7705-PF 4