1303114 九、發明說明： 【發明所屬之技術領域】 本發明旨在提供一種大幅降低製造成本、並令產品可方便量產化 製造之發光二極體麟賴案之製法及裝置，尤適於顧在發光二極 體電極或類似結構之製造者。 【先前技術】 -般發光二極體之製法，首先製作出π^ν化合物晶片後，再於 m-v化合物晶片上製作金屬雜，而後進行_以形成發光二極體 晶粒，最後進行封裝作業，即完成發光二極體之製作。 習用的發光二極體金屬電極的製作方法，大致可分為二種，第一 種方法係先於m-v化合物晶絲面鍍上—層金制，接續利用微影 餘刻技術形成-®案化細層，並_圖舰雜層鮮幕，侧該 金屬膜’以&成金屬電極的製作；另_種方法則是於化合物晶 片上塗佈-層光阻並進行微影成像後，鍍上一層金屬膜，再進行光阻 净離製程，使金屬雜完成金屬電極之製作。 然，上述該些方法皆需利用微影侧製程才能完成電極之製作， 但微影_製程相當_、複雜，在製作上並具有較高之_度者。 因此’提出-種可減化製程、大幅降低製造成本，並使所製出的 發光二極體具有所需電極，實為本發明之用意。 【發明内容】 本發明之主要目的在提供-賴化餘、節省製造成本之發光二 極體蒸著膜圖案之製法者。 5 1303114 本發明之次要目的在提供一種令發光二極體晶片上具有所需電極 之發光二極體蒸著膜圖案之裝置者。 為達上述之目的，本發明之方法所採取之步驟係包括下列步驟： a、將載具置於磁性吸附元件上方；b、將晶片放置於載具中；c、 再把非磁性金屬罩幕置於晶片表面，利用磁性吸附元件之磁力吸附非 磁性金屬罩幕，而纽並目定晶片；以及d、將複數個上述裝置重複 安裝於一蒸鍍轉盤的球面部上，使蒸發源金屬以近乎垂直晶片的角度 鍍膜成像；而依上述步驟㈣之產品係可A幅降低製造成本，且產品 可方便量產化者。 本發明之其他特點及具體實施例可於以下配合附圖之詳細說明 中，進一步瞭解。 【實施方式】 請參第1 ® ’本發明之方法係包括町步驟： 步驟a ··將載具置於磁性吸附元件上方； 步驟b:將晶片置於載具上； γ驟c把非磁性金屬罩幕置於晶#表面，彻磁性吸附元件吸附非 磁性金屬罩幕，藉此以夾住並固定晶片；以及 ；/驟(1將複數個上猶置重複安裝於—驗轉盤的球面部上，使蒸 發源金屬以近乎Μ晶片的角度顧成像。 、、 本裝置係包含有載具i 〇、磁性吸附元件2 Q、非魏金屬軍幕 3 0、擋片5 0以及—蒸_盤6 〇，如第2圖所示，其中該載具1 0可為跡麵或三角料任意形狀，本實施例細圓形說明之， 1303114 而該載具1 ο關緣上、下各延伸-適當長度的邊框，令載具丄〇的 上、下料形成-容置空間i ii 2，且該載具i 〇—側邊框上設 有數個定位孔。 該磁性吸附元件2 0，係配合載具丄〇的外形而設，供置於載具 10設有定位孔的該邊框的容置空間1 1中。 該非磁性金屬罩幕3 0為配合載具χ 〇外形而設之不具磁性之金 屬薄片（其中該非磁性金屬罩幕的厚度係為1Qum〜⑽um)，該金屬薄片 上設有所需之多孔狀幾何圖形者。 該擔片5 Q，-纖應載具1 〇設蚊位减突設有定位柱5 1，另側中央係設有結合柱5 2。 該蒸鍍轉盤6 0係設為球面部，該蒸鍍轉盤6 〇與點蒸發源61 間設有適當距離，且呈相對設置者。 實際製造時，請參第3圖，首先將磁性吸附元件2 〇置於擋片5 0上設有定位柱51之處，再將載具1〇設有定位孔之該側朝下並與 定位柱51結合，令磁性吸附元件2 〇置於載具i 〇下方的容置空間 1 1内，另外，把晶片4 0置於載具1〇上方的容置空間12中，最 後再將設有所需圖形的非磁性金屬罩幕3 〇置於晶片4 〇的表面，使 非磁性金屬罩幕3 0完整覆蓋晶片4 〇，此時，該非磁性金屬罩幕3 0即被下方之磁性吸附元件2 〇的磁力所吸附，該晶片4 〇則被非磁 性金屬罩幕3 0與磁性吸附元件2 〇夾住並固定。 請參第4圖，利用擋片5 0底部所設之結合柱5 2，以將複數擋 1303114 片5 0結合於蒸鍍轉盤6 〇的球面部上，令每一擋片5 〇上的晶片4 0與點蒸發源61近乎成垂直，以使_移轉完整及減少圖案周邊膜 厚下降，而方便晶片4 0鍍膜成像者。 由上可知，以本發明之製法及製出之結構具有如下實用優點： 1、改變習用晶片電極需以微影_較繁靖、困難的技術製作之缺失， 而以精簡的製程完成晶片電極的製作，故可大幅降低製作成本者。 龜 2、透過本發明之載具、磁性吸附元件以及非磁性金屬罩幕的使用，令 晶片電極的製作可方便量產化者。 3、選擇極薄的非磁性金屬罩幕並透過磁性吸附元件的吸附，令非磁性 金屬罩幕緊岔貼附於晶片，同時每一晶片均以近乎垂直的角度與蒸 發源金屬相對，故非磁性金屬罩幕上的圖案移轉完整同時減少圖案 周邊膜厚下降者。 以上所述者，僅為本發明之較佳實施例而已，舉凡依本發明申請 • 專她騎做之均等設計變化，均應為本案之技術所涵蓋。 紅上所述，本發明揭示一改進習用微影蝕刻製程繁瑣、複雜的缺 & ’而提供~種製程精簡、降低縣、並可令晶片電極量產化之發光 -極體蒸著糊案之製法及裝置，具有新穎性，以及產業上之利用價 值，爰依法提出發明專利申請。 8 1303114 【圖式簡單說明】 第1圖係為本發明之製造流程圖。 > 第2圖係為本發明裝置元件之分解立體圖。 第3圖係為本發明裝置之使用組合剖示圖。 第4圖係為本發明蒸鍍之使用狀態圖。 【主要元件符號說明】 1 0、載具 1 1、容置空間 12、容置空間 2 0、磁性吸附元件 3 0、非磁性金屬罩幕 4 0、晶片 5 0、擋片 ^ 5 1、定位柱 5 2、結合柱 6 0、蒸鍍轉盤 6 1、點蒸發源1303114 IX. Description of the Invention: [Technical Field of the Invention] The present invention aims to provide a method and a device for manufacturing a light-emitting diode of a light-emitting diode which greatly reduces the manufacturing cost and enables the product to be mass-produced. Manufacturer of light-emitting diode electrodes or similar structures. [Prior Art] In the method of producing a general-purpose light-emitting diode, first, a π^ν compound wafer is produced, and then a metal impurity is formed on the mv compound wafer, and then _ is formed to form a light-emitting diode crystal grain, and finally, a packaging operation is performed. That is to complete the production of the light-emitting diode. The conventional method for fabricating a light-emitting diode metal electrode can be roughly divided into two types. The first method is formed by plating a layer of gold on the surface of the mv compound, and then forming a pattern by using a lithography technique. Fine layer, and _ map ship layer fresh screen, the side of the metal film 'with & metal electrode; another method is coated on the compound wafer - layer photoresist and lithography imaging, plating The upper metal film is then subjected to a photoresist removal process to complete the fabrication of the metal electrode. However, all of the above methods need to use the lithography side process to complete the electrode fabrication, but the lithography process is quite _, complex, and has a higher degree in production. Therefore, it is the intention of the present invention to propose a reduction process, to substantially reduce the manufacturing cost, and to have the desired electrode of the produced light-emitting diode. SUMMARY OF THE INVENTION The main object of the present invention is to provide a method for producing a light-emitting diode evaporation film pattern which is reduced in cost and which is cost-effective to manufacture. 5 1303114 A secondary object of the present invention is to provide an apparatus for illuminating a pattern of a light-emitting diode having a desired electrode on a light-emitting diode wafer. For the purposes described above, the steps taken by the method of the present invention comprise the steps of: a. placing the carrier over the magnetic adsorption element; b, placing the wafer in the carrier; c, then placing the non-magnetic metal mask Placed on the surface of the wafer, magnetically adsorbing the non-magnetic metal mask by the magnetic attraction element, and aligning the wafer; and d, repeatedly mounting the plurality of the above devices on the spherical surface of the vapor-deposited turntable to make the evaporation source metal The coating of the near-vertical wafer is angled; and the product according to the above step (4) can reduce the manufacturing cost by A, and the product can be easily mass-produced. Other features and embodiments of the present invention will be further understood from the following detailed description of the drawings. [Embodiment] Please refer to the first ® 'the method of the present invention includes the steps of the town: Step a ·· Place the carrier above the magnetic adsorption element; Step b: Place the wafer on the carrier; γC c non-magnetic The metal mask is placed on the surface of the crystal#, and the magnetic adsorption element adsorbs the non-magnetic metal mask to clamp and fix the wafer; and/or (1) repeatedly mounts the plurality of upper surfaces on the spherical surface of the inspection turntable In the above, the evaporation source metal is imaged at an angle close to the wafer. The device includes a carrier i 〇, a magnetic adsorption element 2 Q, a non-wei metal military curtain 30, a blocking piece 50, and a steaming plate. 6 〇, as shown in Fig. 2, wherein the carrier 10 can be any shape of a track or a triangle, the thin circular description of the embodiment, 1303114 and the carrier 1 ο the upper and lower extensions of the edge - The frame of the appropriate length is such that the upper and lower materials of the carrier are formed into the accommodating space i ii 2, and the carrier i 〇 is provided with a plurality of positioning holes on the side frame. The magnetic adsorption element 20 is matched The outer shape of the frame is placed in the accommodating space 1 1 of the frame in which the carrier 10 is provided with a positioning hole. The non-magnetic metal mask 30 is a non-magnetic metal foil provided with a shape of the carrier (wherein the thickness of the non-magnetic metal mask is 1Qum~(10)um), and the metal foil is provided with a desired porous geometry. The figure 5 Q,-fiber carrier 1 is equipped with a positioning column 5 1 , and the center of the other side is provided with a binding column 5 2 . The evaporation plate 60 is set as a spherical surface. The vapor deposition turntable 6 设有 is disposed at an appropriate distance from the point evaporation source 61 and is disposed oppositely. In actual manufacturing, please refer to FIG. 3, firstly, the magnetic adsorption element 2 is placed on the blocking piece 50. Positioning the column 51, the side of the carrier 1 is provided with the positioning hole facing downward and combined with the positioning post 51, so that the magnetic adsorption element 2 is placed in the accommodating space 1 1 below the carrier i ,, The wafer 40 is placed in the accommodating space 12 above the carrier 1 ,, and finally the non-magnetic metal mask 3 provided with the desired pattern is placed on the surface of the wafer 4 to make the non-magnetic metal mask 3 0 completely covers the wafer 4 〇, at this time, the non-magnetic metal mask 30 is the magnetic force of the magnetic adsorption element 2 下方 below After the adsorption, the wafer 4 is clamped and fixed by the non-magnetic metal mask 30 and the magnetic adsorption element 2 。. Referring to Figure 4, the composite column 52 provided at the bottom of the spacer 50 is used to block the plurality of blocks. 1303114 The film 50 is combined with the spherical surface of the vapor-plated turntable 6 ,, so that the wafer 40 on each of the baffles 5 is nearly perpendicular to the point evaporation source 61, so that the _transition is complete and the film thickness of the peripheral film is reduced. It is known from the above that the structure and the structure of the present invention have the following practical advantages: 1. The change of the conventional wafer electrode requires the use of lithography _ more complicated, difficult technology The fabrication of the wafer electrode is completed in a streamlined process, so that the production cost can be greatly reduced. Turtle 2. Through the use of the carrier, the magnetic adsorption element and the non-magnetic metal mask of the present invention, the fabrication of the wafer electrode can be easily mass-produced. 3. Select a very thin non-magnetic metal mask and pass the adsorption of the magnetic adsorption element so that the non-magnetic metal mask is attached to the wafer tightly, and each wafer is opposite to the evaporation source metal at a nearly vertical angle, so The pattern on the magnetic metal mask is completely transferred while reducing the film thickness drop around the pattern. The above description is only the preferred embodiment of the present invention, and the equivalent design changes made by the applicant according to the present invention should be covered by the technology of the present invention. In the red, the present invention discloses a illuminating-polar body evaporation paste which improves the cumbersome and complicated defect of the conventional lithography etching process, and provides a process for simplifying the process, reducing the county, and mass-producing the wafer electrode. The method and device of the system have novelty and industrial use value, and the invention patent application is filed according to law. 8 1303114 [Simple description of the drawings] Fig. 1 is a manufacturing flow chart of the present invention. > Fig. 2 is an exploded perspective view of the device component of the present invention. Figure 3 is a cross-sectional view showing the use of the device of the present invention. Fig. 4 is a view showing the state of use of the vapor deposition of the present invention. [Description of main component symbols] 1 0, carrier 1 1 , accommodating space 12 , accommodating space 20 , magnetic adsorption element 30 , non-magnetic metal mask 40 , wafer 50 , slab ^ 5 1, positioning Column 5 2, combined column 60, vapor deposition turntable 6 1 , point evaporation source