TWI301728B - Active matrix oled - Google Patents

Description

1301728 13055twfl.doc/d 96/11/30 IX. Description of the Invention: [Technical Field] The present invention relates to an active organic light-emitting element (Active Matrix 0LED), and in particular to a method suitable for inkjet Active organic light-emitting elements. Clothing [previous technique]

The information and communication industry has become the mainstream industry today, especially the portable communication display products are the focus of development. Since the flat panel display is a communication interface between people and information, its development is particularly important. Currently used in flat panel display technology include Plasma Display Panel (PDP), Liquid Crystal Display (LCD), Inorganic Electroluminescence Display (ΐη〇Γ^η^ Electroluminescent Display), and LED Body Emitting Diode, LED) display, vacuum display

Flu ence display (VFD), field emission display (8) Emission Display, FED) and electrochromic display

(Electro-Chromic Display) and so on. ... mouth - Compared with other flat panel displays, organic light-emitting displays have great advantages due to their self-illumination, no viewing angle, power saving, simple process, low cost, wide operating temperature and high response speed. Potential, so it is expected to become the mainstream of the next generation of flat panel displays. An active organic light-emitting display has been actively developed in the prior art by sequentially forming an anode layer, an organic mantle layer, and a cathode layer on a substrate on which a plurality of thin film transistors have been formed. According to this, the organic light emitting element is driven by the thin film transistor. 1301728 13〇55twfl.doc/d 96/11/30 The formation of the above-mentioned organic functional layer is based on the selection of 'organic electroluminescent element according to the molecular weight of the organic functional material' (smaH mQlecule G p For the small molecule molecule organic "Qi Ke (p_er SM ~ G_ and Gao Qing two categories; for example, polymer organic functional materials; ink-jet print), the material is dissolved in the solvent, As the ink used for the inkjet Sit function, it is then subjected to inkjet printing to remove the solvent in the ink or to remove the solvent: only the steps of alignment, inkjet, and curing are required. Because Hemo printing uses less equipment and high material utilization rate, the cost of manufacturing is reduced in one step. This is more to say, in general, when it is difficult to ride an organic functional layer, it blocks the ink in each element. (Organic functional materials) will not interact with the stain = color, so the barrier layer of interstitial ink will be placed between m. See Figure i and Figure 2 'Figure! Green is the organic light-emitting halogen array base = ink: brush Schematic diagram of the process, Figure 2 is a single element of Figure i The inkjet printing process is carried out by spraying the ink in the direction of the arrow 1〇3 by using the inkjet head 1 filled with the hairpin 105 (105a, l〇5b, l〇5c) (105a, lG5b). , 105c) to the pixel 1〇6 on the substrate. Although there is a barrier layer (10) around each of the halogen (10), the ink (105a, l〇5b, l〇5c) is blocked from overflowing to the adjacent halogen 1 〇6, but in the process of ink printing 1301728 13055twfl.d〇c/d 96/11/30, the ink (105a, 105b, l〇5c) is sprayed in the pixel 106, It may be sprayed on the higher-level barrier layer 1〇4·: and these inks (i〇5a, i〇5b, 1〇5c) sprayed on the barrier layer 104: will easily follow the barrier layer 1〇4 flows into the adjacent pixel 1〇6. Therefore, the current inkjet technology to form the organic functional layer of the organic light-emitting pixel array substrate will cause the following problems: ·,,, When the ink sprayed in the pixel is an ink having the same luminescent material, for example, both red, green, or blue, the ink will follow the barrier layer during inkjet printing. Flowing into adjacent pixels causes the film thickness of the light-emitting material layer to be inconsistent. , , , 2 · If the ink sprayed in the adjacent two pixels is different ink of the light-emitting material, for example, red, green Or two of the blue, when inkjet printing, the ink will flow along the barrier layer to the adjacent halogen, causing the problem of mutual color mixing. A" [Invention] In view of this, the present invention The purpose of the invention is to provide an active organic spring light-emitting element to solve the problem that the ink overflow is easily generated when an ink-jet printing process is used to form an organic functional layer, and the film of the organic functional layer is uneven, or There is a problem of color mixing between adjacent pixels. An active organic light emitting device is provided. The active light emitting device comprises a substrate, a first/second thin film crystal disposed on the substrate and a capacitor, and an electrode connected to the second thin film transistor. And a barrier layer, wherein the barrier layer covers the first/second thin film capacitor body, the capacitor and at least a portion of the electrode to define on the electrode: an opening area, wherein at least a portion of the electrode is located around the electrode The barrier layer surface 1301728 13055twfl.doc/d 96/11/30 has a recess. The present invention provides an active organic light emitting device, wherein the active light emitting device comprises a substrate, at least two thin film transistors disposed on the substrate, and at least a capacitor and an electrode, and the electrode system is connected to one of the thin film transistors, and a barrier layer, wherein the barrier layer covers the above-mentioned thin film electric grid state and at least a portion of the electrodes to define an opening area on the electrode, wherein at least a portion of the barrier layer surface around the electrode has a concave surface groove. Proposed an active organic light-emitting element 'active organic light-emitting element=substrate-substrate, a second thin-ply-chopper-capacitor disposed on a substrate, and an electrode and an electrode system and a second thin film transistor: And a first barrier layer, a first capacitor, and at least a portion of the electrode, wherein the at least one surface of the barrier layer has a recessed surface of the recess barrier layer Inside the slot. The invention relates to an active organic light-emitting element comprising: a substrate, at least two disposed on the substrate, covering the above-mentioned thin film electric layer: the layer barrier layer is covered by The electrode, the electrode, has an open area, and a part of the barrier layer has a groove on the surface. The second 2 = at least in the groove of the surface of the barrier. The mesh layer is located at the first barrier. The barrier layer proposed in the present invention is designed with a groove, so when, 728 l3〇55twfl.doc/d 96/11/30

When Si inkjet printing technology sprays ink onto the electrodes of each element, it is redundant. %: The second ink is recessed into the groove and trapped therein, so that the ink can be prevented from flowing into the adjacent-S*0% groove. In addition to the design of the recess in the barrier layer, and the recess is provided with another barrier layer, when the ink is applied to the electrodes of the respective pixels by the inkjet printing technique, the excess ink flows into the ink. The groove is trapped in I, Medium' so that ink can be prevented from flowing to adjacent pixels. The above and other objects, features and advantages of the present invention will become more apparent. [Embodiment] FIG. 5 is a schematic view showing an active organic light-emitting pixel array substrate according to a preferred embodiment of the present invention, and FIG. 6 is an equivalent circuit diagram of one of the elements of FIG. Referring to FIG. 5 and FIG. 6 , the active organic light-emitting halogen array substrate of the present invention comprises a substrate 200 , scan lines φ SL1 , SL2 ～ SLn and data lines DL1 , DL2 DLDLm and a plurality of 配置 arranged on the substrate 200 . In addition to the organic functional layer 212 and the second electrode 214, each of the halogens 206 further includes an active element for driving the light-emitting element, as shown in FIG. 6, which includes at least two a thin film transistor and at least one capacitor and one of the first electrodes connected to one of the thin film transistors. In one example, each of the elements includes a switching transistor 1 , a driving transistor 20 , and a capacitor 30 , and the switching transistor 1 is disposed at the intersection of the scan line • SL and the data line DL. One of the electrode terminals of the driving transistor 2 is connected to the light emitting diode 40. Each of the pixels of the present invention includes a barrier layer structure in addition to the above-mentioned 9 1301728 13055 twfl.doc/d 96/11/30 elements, and at least the organic g energy layer 212 of FIG. 3 and FIG. Self-hole injection layer, hole transmission layer

• Light layer, hole barrier layer, electron transport layer and electron injection layer. θ X • FIG. 3 is a partial structural diagram of one element of an active organic matrix substrate according to a preferred embodiment of the present invention, and FIG. 4 is an active organic A schematic cross-sectional view of one of the elements of the luminescent pixel array substrate. Referring to FIG. 3 and FIG. 4, each pixel 2〇6 of the active organic light-emitting pixel array substrate of the present invention comprises a thin film transistor/capacitor disposed on the US board 200, and a first electrode 210 and a resistor 202. The organic functional layer 212 and the second electrode 214. In a preferred embodiment, the substrate 200 is, for example, a germanium substrate, a glass substrate, a plastic substrate, or a flexible substrate. In addition, the thin film transistor/capacitor and the first pole 210 are disposed on the substrate 2, wherein the first electrode is connected to one of the thin film transistors. In a preferred embodiment, each element has a switching transistor 10, a driving transistor 2A, and a capacitor 3 (shown in Figure 6). However, the present invention is not limited to the form of the switching transistor 1A and the driving body 35, which may be an amorphous 7 thin film transistor or a polycrystalline thin film transistor. Similarly, the present invention does not limit the form of the capacitor 3〇, which differs depending on the process and design of the transistor. For example, if the transistor is a polycrystalline thin film transistor, the capacitor is under 3〇. The electrode is, for example, a stone material. FIG. 7 is a schematic cross-sectional view showing a thin film transistor connected to a first electrode, which comprises a thin film transistor 210b disposed on a substrate 200, and a first electrode 2i〇a connected to the thin film transistor 2i〇b. The sound insulating film 210b and the barrier layer 2〇2 of the partial first electrode 21〇a are covered. 1301728 13055twfl.doc/d 96/11/30 It is particularly worth mentioning that the number of thin film transistors and capacitors used in the present invention is the same as that used in the first element. And set. For example, the second material is used as an anode, and one of the materials and the indium oxide (4), and the oxidation can also be used as a cathode. The material thereof is, for example, i metal=pole 210a, and the succession is shown in FIG. 3, FIG. 4 and FIG. 7. The thin film transistor, the capacitor, and the second electrode of the respective layers 2G6 in the barrier layer are defined as an opening area on the first electrode 21A, and at least one around the first electrode. Part of the barrier layer 2〇2, /, has a groove 208. In the preferred embodiment, p and the opening area defined by the spacer 2〇2 are, for example, rectangular, elliptical or circular. In a preferred embodiment, the shape of the groove described by Ji is, for example, an elongated shape, and its depth is, for example, less than 0.3 μm. In the preferred embodiment, the thickness of the barrier layer 2 〇 2 where the recess 208 is not formed is, for example, less than 丨 micron. In addition, the material of the barrier layer 202 is, for example, a photoresist material (for example, polyammonium is in another

In the preferred embodiment, the material of the barrier layer 202 is, for example, an oxide, a nitride or an oxynitride. As can be seen from the above description, since the recess 208 is formed in the barrier layer 202, when an inkjet printing process is used to spray the organic functional layer ink onto the halogen 206, excess ink may flow into the recess 208 and become trapped. Among them, it is possible to prevent the ink from flowing into the adjacent halogen. After the ink jet printing process is completed, the formed organic functional layer 212 covers the first electrode 210 exposed by the barrier layer 202. Thereafter, the formed second electrode 214 is overlaid on the organic functional layer 212, such as 11 1301728 96/11/30 13055 twfl.doc / d, which constitutes a complete active organic light-emitting halogen array substrate, which The system includes a light-emitting diode 40 (including a first electrode film, an organic functional layer and a second electrode film), thin film transistors 10 and 20, and a capacitor 30 (as shown in FIG. 5). The structure of another barrier layer of this embodiment is similar to that of FIG. 8 and FIG. 4 as shown in FIG. 8 and FIG. 9 . The only difference is that the groove 208 of the surface of the barrier layer 202 is The side walls are sloped.

The organic light-emitting halogen array substrate of the second embodiment of the present invention is also composed of a plurality of pixels 206, and the structure of each element is as shown in Figs. 1 and 11 . FIG. 10 is a partial structural diagram of a halogen element of an active organic light-emitting halogen array substrate according to another preferred embodiment of the present invention, and illustrates an active organic light-emitting device according to another preferred embodiment of the present invention. A schematic cross-sectional view of one of the elements of the matrix substrate. The pixel illustrated in FIG. 10 and FIG. 11 is similar to the pixel of FIG. 3 and FIG. 4 previously described, except that the groove 2〇8 of the barrier layer 202 further includes another barrier layer 2〇. 4. In a preferred embodiment, the barrier layer 2〇4 does not fill the recesses 2〇8. In one example, the material of the barrier layer 204 is, for example, a photoresist material (for example, polyamidamine). As described above, since the barrier layer 2G2 is formed with a groove, it is recessed in the recess 208. The barrier layer 204 is not filled with the grooves 208, 206 ί, and the organic functional layer ink is sprayed on the halogen to prevent the ink tank 208 from being trapped therein. The same is formed after the inkjet printing process is completed. 1301728 13055twfl.doc/d 96/11/30 Π 覆盖 will cover, the second electrode 214 formed by the first electrode 210 κ ί exposed by the spacer 202 is covered by the organic functional layer The active organic light-emitting halogen array base i includes a light-emitting diode 4Q (including an anode layer:::, a thin film transistor 10, 2°, and a storage capacitor_'. As can be seen from the above, the present invention has the following advantages: In the active organic light-emitting halogen array substrate proposed by Jin, i is concave, so when ink is printed on the ink electrode by the inkjet printing technology, the excess ink will flow into the groove and be trapped in /, so Avoid ink flowing to adjacent pixels. Thanks to Ganben Another type of active organic light-emitting pixel array substrate, layer, 'design has _' and (10) is configured with a barrier: Shi Uli (four) ink printing technology will ink the ink nozzle into each groove will flow into the groove and Entrapped in it: the ink will be flown to the adjacent pixels. j Avoid the limitation: two = 2_ example disclosed above, but it is not used to and Fan Yuan; Therefore, the protection of the present invention [圏=;]_ is subject to the scope defined by the patent. Extreme: Process to form an organic light-emitting pixel array if: a schematic diagram of a three-dimensional structure of one of the pixels. A preferred organic light-emitting picture 13 1301728 13〇55twfl .doc/d 96/11/30 A schematic diagram of a part of the structure of a single element of the primed matrix. The active organic light-emitting pattern of a preferred embodiment is a gold-tone 66 竺 动 有机 有机 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋Prime array base, its picture-like organic light painting j H Ri Linfa (four) - better real off A schematic diagram of a part of the structure of the pixel array of the pixel array substrate. The schematic diagram of the elemental element of the active organic light-emitting matrix array substrate of the preferred embodiment is shown in Fig. 10. A schematic diagram of a partial structure of a silk-like organic hair, a dentin-based array substrate, and a honeycomb element. FIG. 11 is a schematic diagram of one of the active organic light-emitting halogen array substrates according to still another preferred embodiment of the present invention. Schematic diagram of the cross section of the element. [Main component symbol description] 100, 200: Substrate 101: Inkjet heads 102, 104, 202, 204 · Barrier layer 103: Arrows 105a, 105b, 105c: Ink 106, 206: Alizarin 208 ·• Groove 14 1301728 13055twfl.doc/d 96/11/30 210 : Thin film transistor and electrode 210a: first electrode • 210b: thin film transistor '212: organic functional layer 214: second electrode DL, DL1 to DLm : Data line SL, SL, SL1 to SLn: Scan line 10: Switching transistor • 20: Driving transistor 30: Capacitor 40: Light-emitting diode (including first electrode, organic functional layer and second electrode film)

15

Claims (1)

1301728 13055twf2.doc/d ST: Ϊ; V.—, ί A 43⁄43⁄4 正:: Magnetic page 丨97-05-05 X. Patent application scope: 1. Active type organic light-emitting element, to a substrate; The upper/first-axis transistor and at least the capacitor are disposed on a first electrode and connected to the second thin film transistor; The layer 'covers the first, second thin film transistor, and the capacitor has a part of the barrier layer not covering the first electrode and can define an opening π area; wherein the barrier layer has at least a portion of the The surface above the electrode has a groove. 2. The active organic light-emitting element according to claim 1, wherein the opening area defined by the barrier layer on the first electrode is rectangular, elliptical, circular or elongated. . 3. The active organic light-emitting element of claim 1, wherein the groove of the barrier layer has a depth of less than 0.3 micrometers. 4. The active organic light-emitting element according to claim 1, wherein the thickness of the barrier layer not provided with the groove is less than 〇·1 μm 0 5 as described in claim 1 The active organic light-emitting element 'where the material of the barrier layer comprises a photoresist material. 6. The active organic light-emitting element of claim 1, wherein the material of the barrier layer comprises polyamidamine. 7. The active organic light-emitting element of claim </ RTI> wherein the material of the barrier layer comprises an oxide, a nitride or an oxynitride 0 16 130172813055 twf2.doc/d 97-04-03 ▲ tt"The active organic light-emitting element 1»1 according to item 1 of the patent scope, the board is selected from at least one of the Wei board, the glass substrate, the plastic substrate and the flexible substrate. The active organic hair precursor/in the first item is an anode. The active carbon light element x% of the material described in the item 1 is a conductive metal oxide. The active organic light-emitting element and the oxygen-indium compound according to Item 10 are at least selected from the group consisting of indium tin oxide and aluminum oxide zinc, and the first electrode is a cathode. The material f of the item 1 is a metal or alloy. The active organic light-emitting element described in the above-mentioned Item / Item 1 2: The electro-crystalline system is a switching transistor. # The active organic light-emitting day system described in item 14 of the profit-making range of the middle is an amorphous thin-film transistor or a multi-piece, and the british silk machine is a light-emitting system. It is a drive transistor. =·############################################################################################## Item 17 | W 日修1301728 13055twf2.doc/d 97-04-03 - The piece is located in the first Leito, the interest &19; as claimed, and the side walls of the compartment are sloped. • · The wire, the wire-type organic light-emitting element described in the wire/enclosure, and the material of the electrode under the Zhonghai Electric Strike are Shi Xi. An active organic light-emitting device comprising at least one substrate; ^ at least two germanium film transistors and at least one capacitor on the plate, both of which are disposed on the base electrode, and are connected to the film a transistor; and a barrier layer overlying the thin film transistor, the electrical capacitance and above the layer 2 overlying the first electrode to define a first electrode table = yes == at least - part of the The first electrode forest 2i·中如= for the active organic light-emitting element described in item 20 of the profit range ί 牛 i,, middle &quot; the opening area defined by the first layer on the first electrode is a rectangle , oval, round or long. , Du 12 by the active organic light-emitting element as described in claim 20, wherein the groove of the surface of the interlayer has a depth of less than 0.3 μm. The active organic light-emitting element of the item 2 of the m2m 士士利范围, the thickness of the barrier layer in which the groove is not disposed is less than 〇1 μm. * The active organic light-emitting element described in the patent application scope 2Q... The material of the medium-distance barrier layer includes a photoresist material. 25. The active organic light-emitting device of claim 2, wherein the material of the barrier layer comprises polyamidamine. 26· The active organic light-emitting element 1301728 13055twf2.doc/d as described in the second paragraph of the patent application scope is: 4: month (more.), the official page is changed to 97-04-03, wherein the material of the barrier layer includes oxidation. Matter, nitride or oxynitride. The active organic light-emitting element according to claim 20, wherein the substrate is at least one selected from the group consisting of a germanium substrate, a glass substrate, a plastic substrate, and a spear substrate. The active organic light-emitting element of the invention of claim 2, wherein the first electrode is an anode. The active organic light-emitting element according to claim 2, wherein the material of the first electrode is a conductive metal oxide. The metal oxide of the active organic light-emitting element 2/2 radio and television mentioned in the 29th item of Zheng Shenli is selected from at least one of yttrium tin oxide, oxidized zinc and emulsified steel. In the active organic light-emitting element described in the second aspect of the patent, the first electrode is a cathode. Pieces of the material such as 兮 =] 目目 2g item of the filament machine illuminating element in the first one of the material is a metal or alloy. Pieces =· Zhongru Shen, the active organic light-emitting element described in item 2 of the upper range. One thin-thickness electro-crystal system is a switching transistor. The active organic light-emitting element thin film electro-hydraulic system described in item 33 of the Shenmen n Liwei range is an amorphous thin-film transistor or a polycrystalline stone Λ5 as described in the scope 20 The active organic light-emitting element of which is another 溥 film electro-crystal system is a driving transistor. Piece, 3λ, such as the active organic light-emitting element described in Item 35, the pure electrokinetic solar corona system is amorphous austenitic thin film transistor or polycrystalline lithos 19 1301728 13055twf2.doc/d 97-04-03 month. Pityriasis (more) is replacing the page of the film transistor. Piece, in which ^ is applied to &quot; the special heart ^ the = the active organic light-emitting element. The sidewall of the barrier layer at the edge of the film is a ramp member, and the electrode of the wire-type organic light-emitting element described in item 2G is an active organic light-emitting element, which is at least included in the film: ^ substrate, the first / second thin germanium transistor on the substrate and at least one capacitor, which are arranged at 9 first electrode, connected to the second thin film transistor; ~ J 5 ^ 3 layer ' is covered by the first a second thin film transistor, an electric valley, and a portion of the first barrier layer not covering the first electrode to define an opening area of the first electrode; wherein the first barrier layer is at least a portion of the surface above the first electrode has a groove ^ and A second barrier layer ' is disposed in the recess of the surface of the first barrier layer. The active organic light-emitting element as described in claim __39, wherein the opening area of the barrier layer on the first electrode is rectangular, elliptical, circular or elongated. 41. The active organic light-emitting device of claim 39, wherein a depth of the groove of the surface of the first barrier layer is less than 0.3 micrometers. 42. Active according to claim 39 The organic light-emitting element, wherein the thickness of the first barrier layer not provided with the groove is less than 20 but less than another (页) positive replacement page - 97-04-03 0.1 micron. 43. The active organic light-emitting device of claim 39, wherein the material of the first barrier layer comprises a photoresist material. 44. The active organic light-emitting device of claim 39, wherein the material of the first barrier layer comprises polyamidamine. The active organic light-emitting device of claim 39, wherein the material of the first barrier layer comprises an oxide, a nitride or an oxynitride. The active organic light-emitting element according to claim 39, wherein the substrate is at least one selected from the group consisting of a germanium substrate, a glass substrate, a plastic substrate, and a flexible substrate. 47. The active organic light-emitting device of claim 39, wherein the first electrode is an anode. 48. The active organic light-emitting device of claim 39, wherein the material of the first electrode is a conductive metal oxide. 49. The active organic light-emitting device of claim 48, wherein the conductive metal oxide is selected from at least one of indium tin oxide, aluminum zinc oxide, and indium oxide. 50. The active organic light-emitting device of claim 39, wherein the first electrode is a cathode. The active organic light-emitting element of claim 39, wherein the material of the first electrode is a metal or an alloy. 52. The active organic light-emitting element of claim 39, wherein the first-thin-film electro-crystalline system is a switching transistor. 53. Active organic light-emitting element 21 as described in claim 52. 1301728 13055twf2.doc/d Japanese repair (more) is being replaced by page 97-04-03 == Switching electro-crystal system is non-Saki Electric crystal or Polycrystalline dream piece, Hymt39 tear-shaped looking machine luminous element X brother - thin film electro-crystal system is a driving transistor. The strain f is made up of the active organic well-opening thin film electric electric drive system as described in claim 54 of the patent application, and the amorphous electric film crystal system is an amorphous material film crystal or a quartz crystal piece, wherein: 56::d: 39 The active organic light-emitting element (57) of the active organic light-emitting element described in the section has a slope shape. Piece, 1^(4) 39 items of the silk machine illuminating element, and the material of the electrode under the Τβ海电奋 benefit is 矽. L8·中如至申39 item of the cutting machine luminous element ^ 夕有&quot; The groove is not filled by the barrier layer. The active organic light-emitting element according to item 39 of the general specification, wherein the material of the barrier layer comprises a photoresist material. In item 10, the =######################################################### An active organic light-emitting device comprising at least one substrate; at least two thin film transistors and at least one capacitor disposed on the substrate; an electrode connected to the thin film transistor; and a a first barrier layer covering the thin film transistor and the capacitor and at least a portion of the first barrier layer not covering the first electrode to define an opening area of the first electrode; wherein the first barrier At least one part of the layer 22 1301728 13〇55twf2.doc/d 97-04-03 Shirt: the surface above the electrode has a groove; and 621 is a barrier layer located in the groove of the surface of the first barrier layer. The active organic light-emitting element area as described in item 61 of the mth circumference of i today is the rectangular, elliptical, circular or elongated shape of the open horse on the first electrode film. Λ3·中&quot;; Shen Di, the active organic light-emitting element described in the scope of item 61. Eight medium material—the depth of the groove on the surface of the barrier layer is less than 0.3 micron. The thickness of the barrier layer of the $&quot; groove is smaller than that of the active organic light-emitting element described in Item 61 of the L5. The material of the barrier layer includes a photoresist material. The material of the tear-off main shouting organic light-emitting element /, A / brother barrier layer includes polyamidamine. Article 6 Λ 该项 有机 有机 有机 有机 有机 有机 有机 ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ 68. The active component of claim 61, wherein the substrate is selected from at least one of a money board, a glass substrate, and a plastic substrate. The active organic light-emitting element described in the 61st patent of the invention is wherein the first electrode is an anode. 70. The wire-type organic light-emitting device of claim 61, wherein the material of the first electrode is a conductive metal oxide. 23 1301728 13055twf2.doc/d 97-04-03 71. The active organic light-emitting device of claim 7, wherein the conductive metal oxide is at least one selected from the group consisting of indium tin oxide, zinc oxide, and indium zinc oxide. The active organic light-emitting device of claim 61, wherein the first electrode is a cathode. 73. The active organic light-emitting device of claim 61, wherein the first electrode is made of a metal or an alloy. 74. The active organic light-emitting element of claim 61, wherein the thin film electro-crystalline system is a switching transistor. 75. The active organic light-emitting device of claim 74, wherein the switch transistor system is an amorphous chopped film transistor or a polycrystalline film transistor. ▲ 7 Gan \ If the active organic light-emitting element described in claim 61 is applied, the other thin-film electro-crystal system is a driving transistor. Therefore, 1\, such as the active organic light-emitting element film according to the 76th patent of the patent application, the crystallized electro-optical crystal material, the amorphous 9 thief transistor or the polycrystalline stone, the 61st item of 78 The active organic light-emitting element 79, such as the middle edge of the barrier layer, has a sloped shape. The material of the lower electrode of the active organic light-emitting element 80 described in Item 61 of the capacitor crying H is 矽. At least the active organic light-emitting element described in Item 61 of the Moon has been filled with the groove of the frequency band of the application. The active organic light-emitting element (the material mentioned in the item of the barrier layer) comprises a photoresist material. Piece piece 24 1301728 13055twf2.doc/d .......... __·ιιιι_ι__1 Year 1 repair (more) replacement page 97-04-03 82. If you apply for the scope of the specialist section 61 An active organic light emitting device, wherein the material of the barrier layer comprises polyamidamine. 25 1301728 13055twfl.doc/d 96/11/30 VII. Designated representative map: (1) The representative representative figure of this case is: Figure 3 (2), the representative symbol of the representative figure is a simple description: 200: Substrate 202: Barrier Layer 206 · · pixel 208 : groove 210 : thin film transistor and first electrode VIII. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: