TWI300736B - - Google Patents
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- TWI300736B TWI300736B TW95145342A TW95145342A TWI300736B TW I300736 B TWI300736 B TW I300736B TW 95145342 A TW95145342 A TW 95145342A TW 95145342 A TW95145342 A TW 95145342A TW I300736 B TWI300736 B TW I300736B
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- polishing pad
- insulating layer
- cusp
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
1300736 九、發明說明: 【發明所屬之技術領域】 本發明係有關拋光墊的修整器,尤其是有關化學機械拋光 墊修整器的表面結構者。 【先前技術】 化學機械拋光(Chemical Mechanical Polishing,CMP) 是製作晶圓時的精密拋光製程,目的在於使晶圓表面全面平坦 ► 化以便叹计之精微電路圖案經由曝光及顯影製程能完整的佈 於晶圓上。 CMP技術的基本原理是將待抛光工件在一定的下壓力及抛 光液(由超細顆粒、化學氧化劑和液體介質組成的混合液)的 存在下,相對於一個拋光墊(Pad)作旋轉運動,借助磨粒的 機械磨削及化學氧化劑的腐蝕作用來完成對工件表面的材料 去除,並獲得光潔表面。 在CMP製程中’拋光墊常為含有聚氨基甲酸酯的聚酯纖維 蚝’其上有許多小孔,這些小孔有利於傳送聚料和拋光。在對 若干片圓晶片進行拋光後,拋光墊被磨平,同時孔内填滿了漿 料顆粒,如圖1所示。拋光墊表面除了會因研磨而磨損外也會 有研磨副產物的堆積造成填塞(Glazing),使拋光墊失去部分 保持研漿的能力,若不對拋光墊加以修整(Dressing),則研 磨數片晶圓後,拋光墊表面會堆積大量雜質,使得後續晶圓的 移除率明顯下降,同時還使矽表面出現劃傷。為了達到晶圓加 1300736 工篁產的需求及維持品質的穩定性,必 更用鑽石修整 (Conditioner)對拋光墊加以修整,以期 σ1300736 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a dresser for a polishing pad, and more particularly to a surface structure of a chemical mechanical polishing pad conditioner. [Prior Art] Chemical Mechanical Polishing (CMP) is a precision polishing process for wafer fabrication. The purpose is to make the surface of the wafer completely flat. The fine circuit pattern of the sigh can be completely integrated through the exposure and development process. On the wafer. The basic principle of the CMP technology is to rotate the workpiece to be polished in a presence of a certain downforce and a polishing liquid (a mixture of ultrafine particles, a chemical oxidant and a liquid medium) with respect to a polishing pad (Pad). The mechanical removal of the abrasive particles and the corrosion of the chemical oxidant are used to remove the material from the surface of the workpiece and obtain a smooth surface. In the CMP process, the polishing pad is often a polyurethane-containing polyester fiber 蚝 which has a plurality of small holes thereon which facilitate the conveyance of the material and polishing. After polishing a plurality of wafers, the polishing pad is smoothed while the pores are filled with slurry particles as shown in FIG. In addition to wear due to grinding, the surface of the polishing pad may also be filled with the accumulation of grinding by-products, causing the polishing pad to lose some of its ability to maintain the slurry. If the polishing pad is not trimmed, the number of crystals is ground. After the circle, a large amount of impurities are deposited on the surface of the polishing pad, so that the removal rate of the subsequent wafer is significantly reduced, and the surface of the crucible is also scratched. In order to meet the needs of the wafer plus 1300,736 workmanship and maintain the stability of the quality, the polishing pad must be trimmed with a Diamond trimer for a period of time.
產物,以恢復拋光塾的粗糙面,如圖2所-、 研磨田J 丁改善其容納紫^料 的能力,恢復拋光墊表面的孔洞及其把持、 '' 、 運运研磨液之能 力,如此可叫德成本並制晶圓量鱗品質穩定的需 求。修整器決定了晶圓與拋錄的接觸面積及接繼力,也^The product, in order to restore the rough surface of the polished enamel, as shown in Figure 2, the grinding field J ding improves its ability to contain the purple material, restores the pores on the surface of the polishing pad and its ability to hold, '', transport the slurry, so It can be called the cost and the demand for stable wafer quality. The trimmer determines the contact area and succession between the wafer and the scratch, also
定了晶圓抛光的效率及平坦化的品質,在電子及光電產業上具 有實用性、商業性、前瞻性。 ^ 〃 目前業界所採用的鑽;5修整H ’―般都是將鑽石雜黏著 在金屬圓板上,细鑽石切人拋光墊中進而移除,因此諸如鑽 石的麵、減、密度錢__定方式等成為影響抛光塾 修整品質的重要因素。 鑽石修整器上的鑽石,一般是採用天然鑽石或是高壓製成 的人工單晶鑽石。天然鑽石的外觀形狀不規則且多具尖角,因 此在修整拋光墊時因為比較銳利而可以有較高的拋光墊移除 率,但卻也使得拋光墊消耗得快而壽命不長;此外,由於此種 鑽石形狀較不規則,因此在受到撞擊時容易崩裂且對晶圓造成 刮傷。 至於高壓制的人工單晶鑽石,此種鑽石晶形通常較為完 整、内部缺陷少,因此撞裂強度高,可以大幅減少晶圓因鑽石 破碎而被刮傷的情形發生。 1300736 現今業界所_的鑽石修整器,―般是設法賴石雜固 定在金屬圓板上,而固定鑽石的方法大致有⑴電鑛 (Electroplating)^(2)^ (Brazing) CVDCChemicalThe efficiency and flatness of wafer polishing are determined, and it is practical, commercial, and forward-looking in the electronics and optoelectronic industries. ^ 〃 The drills currently used in the industry; 5 trimming H '-- all kinds of diamonds are glued on the metal plate, and the fine diamonds are cut into the polishing pad to remove them, so the surface, density, and density of diamonds __ The setting method has become an important factor affecting the quality of the polishing 塾. Diamonds on diamond dressers are usually made of natural diamonds or artificial single crystal diamonds made of high pressure. Natural diamonds have irregular shapes and sharp corners, so they can have a higher polishing pad removal rate when trimming the polishing pad, but they also make the polishing pad consume faster and have a shorter life; Because of the irregular shape of the diamond, it is prone to cracking and scratching the wafer when subjected to impact. As for the high-pressure artificial single crystal diamond, the crystal form of the diamond is usually relatively complete and has few internal defects, so the high cracking strength can greatly reduce the occurrence of scratches on the wafer due to broken diamonds. 1300736 The diamond dresser in the industry today is generally trying to fix the stone on the metal circular plate, and the method of fixing the diamond is roughly (1) Electroplating ^(2)^ (Brazing) CVDCChemical
Vapor Deposits’化學氣相沈積)鑛膜法。 電鑛法,是先將鑽石隨機灑在金屬圓板上,然後置入含有Vapor Deposits' chemical vapor deposition. The electro-mine method is to randomly sprinkle the diamond on the metal circular plate and then put it into the containing
隱4(硫酸鎳)液體的電解槽中,利用電解析出的錄n附著在 |;5 12_11’^^;5 1^粒被||11金屬卡住峨在金屬圓板 10的表面上。然而此種固定模式,㈣金屬是以凸面接麵 石12低粒,因此只能機械式的卡住鑽石12,如圖3所示,使 知鑽石12修整ϋ在修整拋光墊咖域^ 12附著不牢而容易 脫落’造成晶圓損傷。再者,H U金屬必須蓋住大半個鑽石 12才能將其卡住,使得鑽石12露出的高度有限,不能有效的 切入拋光墊中;而且鎳11層的濃度太高也會阻礙排屑,使得 加工效率大減,甚至無法切削。 硬焊法,也是先將鑽石12隨機灑在金屬圓板1〇上,然後 以炼融的鎳11合金將鑽石紙粒焊在金屬圓板1〇上。如圖5 示。雖然硬焊是以化學的模式來固定鑽石12,但由於鑽石12 分佈不均而使得有些地方的鎳11層較薄,因此當鑽石12修整 器受到較大撞擊時,仍然會出現鑽石12連同鎳11金屬一起脫 落的現象,如圖6所示。 電鍍法或者是硬焊法,因為鑽石是隨機灑或是排列在金屬 1300736 圓板上的,都會使得鑽石修整器會出現分佈不均的情形,只有 局部較高的鑽石能夠接觸到拋光墊,使得工作鑽石數較少而效 率不南。 CVD鑽石鍍膜法,係利用CVD技術使具有複數尖點131的 鑽石膜13形成於金屬圓板14上,其優點是鑽石的尖點131非 常整齊及等高,如圖7所示,利於修整拋光墊。但是鑽石膜 13還是會有斷裂及崩裂的情況,如圖8所示。當鑽石膜13的 尖點131斷裂後一樣會造成晶圓的刮傷及降低加工效率。 為了增加鑽石與金屬圓板的結合強度,及延長CMp修整器 的使用哥命,有複數專利揭露相關的技術,例如台灣公開專利 第200626300號,揭示的化學機械研磨修整器,係在一樹脂層 中具有提高的超級磨粒附著力;台灣公開專利第2〇〇533467 號,揭示的拋光布用修整器及其製造方法,係維持拋光布用修 整為穩疋的修整性’尤其是消除脫粒為起因的拋光布所導致晶 圓刮痕;台灣公開專利第2〇〇_42號,揭示的化學麵拋光 塾及其相關的製造與應用方法,係以增加中央磨粒之工作負載 延長CMP修整器的使用壽命。 一般以CVD鍍鑽石技術製作陣列的鑽石膜修整器,其鑽石 膜13的尖點131的斷裂情況無法被偵測,而無法提供何時更 換修整的訊息。當尖點131的斷裂數量過多而未即時更換修 整器時’將會造成晶傷’且無法對拋光钱行有效的修 1300736 整,而降健光墊的加I效率。且—般鑽石膜13均為單料 構,當其尖點131斷裂時,即失去修整減墊之侧,較不耐 用。 【發明内容】 為了提升修整器的使用壽命並具有可被偵測的結構,而提 出本發明。 ► 本發明的主要目的,在提供—種拋光墊修整器的表面結 構’可延長修整器的使用壽命者。 本發明的另-目的,在提供—種拋光墊修整器的表面結 構,可偵測修整器的複數凸出的尖點的斷裂情況者。 本發明的一種拋光墊修整器的表面結構,係用以提升修整 裔的使用壽命並具有可被伽,J的結構者,包括複數由内向外依 序結合的導電層及絕緣層;該複數絕緣層分別具有複數相對應 凸出的尖點,俾當外層的該絕緣層的尖點斷裂時,内層的該絕 緣層的尖點突出於斷裂處,仍可繼續對一拋光墊進行修整作 業;俾進一步供一電源不同極性的兩端分別電性連接該吸附液 體的拋光墊、該修整器最内層的導電層,並使一電力感測器分 別電性連接該吸附液體的拋光墊、該修整器的各層導電層,藉 由該電力感測器顯示的電流或電壓的大小,得知該修整器的各 層絕緣層的尖點的斷裂情況。 1300736 本發明的其他目的、功效,請參閱圖式及實施例,詳細說 明如下。 【實施方式】 請參閱圖9、1〇所示。本發明拋光墊修整器的表面結構, 係用以提升修整器的使用壽命並具有可被偵測的結構者;其第 一實施例的修整器20,包括由内向外依序結合的第一導電層 21、第一絕緣層22、第二導電層23及第二絕緣層24 ;第一絕 緣層22及第二絕緣層24分別具有複數相對應凸出的第一尖點 221及第二尖點241,如圖9所示。當第二尖點241斷裂時,第 一尖點221突出於斷裂處,仍可繼續對拋光墊4〇進行修整作 業,因此可提升修整器20的使用壽命,如圖10所示。 本實施例的修整器20,進一步可供一電源不同極性的兩端 分別電性連接該吸附液體的拋光塾40、該修整器2〇最内層的 弟一導電層21 ;並使一電力感測器分別電性連接該吸附液體的 拋光墊40、修整器20各層的第一導電層21及第二導電層23 ; 猎由该電力感測恭顯不的電流或電壓的大小,得知第一尖點221 及第二尖點241的斷裂情況,以即時監測修整器2〇的第一尖點 221及第二尖點24的損壞狀況。 其中,電源使拋光墊40及第一導電層21之間具有電位差; 當複數凸出的第^一炎點221及第一尖點24無斷裂的情況時,電 力感測器會顯示高電壓、低電流的狀況;當複數凸出的第二尖 點241及第一尖點221有斷裂的情況時,拋光墊4〇吸附的液體 1300736 會滲入第二絕緣層24内部與第二導電層23接觸而電性連接, 或滲入第一絕緣層22内部與第一導電層21接觸而電性連接, 電力感測器即會顯示電壓降低,電流升高的情況;當凸出的第 二尖點241及第一尖點221斷裂的數目愈多時,電力感測器顯 示電流值愈高。 請參閱圖11、12所示。本發明拋光墊修整器的表面結構第 二實施例,係修整器30具有由内向外依序結合的第一導電層 31、第一絕緣層32、第二導電層33、第二絕緣層34、第三導 電層35及第三絕緣層36 ;第一絕緣層32、第二絕緣層34及第 三絕緣層36分別具有相對應凸出的第一尖點321'第二尖點341 及第三尖點361,如圖11所示。當第三尖點361斷裂時,第二 尖點321突出於斷裂處,仍可繼續對拋光墊4〇進行修整作業, 如圖12所示;或當第三尖點361、第二尖點341斷裂時,第一 尖點321突出於斷裂處,仍可繼續對拋光墊4〇進行修整作業, 因此可提升修整器30的使用壽命。 當要偵測修整器30的第三尖點361、第二尖點341及第一 尖點321是否有斷裂的情況時,係使電源的兩端分別電性連接 吸附有液體的拋光墊40及第-導電層31 ;並使電力债測器分 別電性連接第一導電層31 '第二導電層33、第三導電層35及 抛光塾40。如第一實施例中所述者,藉由電力偵測器顯示的電 凌1,即可得知第三尖點36卜第二尖點341及第一尖點321In the electrolytic cell of the hidden 4 (nickel sulphate) liquid, the recorded n deposited by electrolysis is attached to the surface of the metal circular plate 10 by the metal of the ||11 1_11'^^; However, in this fixed mode, (4) the metal is a low-grain joint with the convex surface stone 12, so it can only mechanically clamp the diamond 12, as shown in Fig. 3, so that the diamond 12 is trimmed and trimmed in the polishing pad. It is not strong and easy to fall off' causing wafer damage. Furthermore, the HU metal must cover the majority of the diamond 12 in order to catch it, so that the diamond 12 is exposed to a limited height and cannot be effectively cut into the polishing pad; and the concentration of the nickel 11 layer is too high, which hinders the chip removal, making the processing The efficiency is greatly reduced and even impossible to cut. In the brazing method, the diamond 12 is first randomly sprinkled on the metal disc 1 ,, and then the diamond paper is welded to the metal disc 1 炼 by the fused nickel 11 alloy. As shown in Figure 5. Although brazing is a chemical mode to fix the diamond 12, due to the uneven distribution of the diamond 12, the nickel 11 layer is thinner in some places, so when the diamond 12 dresser is subjected to a large impact, the diamond 12 together with the nickel still appears. 11 The phenomenon of metal falling off together, as shown in Figure 6. Electroplating or brazing, because the diamond is randomly sprinkled or arranged on the metal 1300736 disc, will cause uneven distribution of the diamond dresser, only the local higher diamond can contact the polishing pad, so that The number of working diamonds is small and the efficiency is not south. The CVD diamond coating method uses a CVD technique to form a diamond film 13 having a plurality of sharp points 131 on the metal circular plate 14. The advantage is that the sharp point 131 of the diamond is very neat and equal, as shown in FIG. pad. However, the diamond film 13 still has cracks and cracks, as shown in Fig. 8. When the sharp point 131 of the diamond film 13 is broken, the wafer is scratched and the processing efficiency is lowered. In order to increase the bonding strength between the diamond and the metal circular plate, and to extend the use of the CMp dresser, there are a number of patents disclosed in the related art, for example, the chemical mechanical polishing dresser disclosed in Taiwan Patent Publication No. 200626300, which is attached to a resin layer. The invention has an improved superabrasive adhesion; the polishing cloth dresser disclosed in Japanese Laid-Open Patent Publication No. 2,533,467, and the method of manufacturing the same, which maintains the polishing cloth to be trimmed to be stable, especially to eliminate threshing. Wafer scratches caused by the polishing cloth of the cause; the chemical surface polishing enamel disclosed in Taiwan Patent No. 2-42, and related manufacturing and application methods, are used to increase the workload of the central abrasive grain to extend the CMP conditioner The service life. Generally, the diamond film dresser of the array is fabricated by CVD diamond plating technology, and the breakage of the sharp point 131 of the diamond film 13 cannot be detected, and the information of when to change the trimming cannot be provided. When the number of breaks of the cusp 131 is too large and the trimmer is not replaced immediately, the crystal damage will be caused and the 1300736 can not be effectively repaired, and the I-efficiency of the light pad can be reduced. Moreover, the general diamond film 13 is a single material structure, and when the sharp point 131 is broken, the side of the trimming pad is lost, which is less durable. SUMMARY OF THE INVENTION The present invention has been made to improve the service life of a trimmer and to have a structure that can be detected. ► The primary object of the present invention is to provide a surface structure for a polishing pad conditioner that extends the life of the dresser. Another object of the present invention is to provide a surface structure for a polishing pad conditioner that can detect breakage of a plurality of protruding cusps of the dresser. The surface structure of a polishing pad conditioner of the present invention is used to improve the service life of a trimmer and has a structure capable of being gamma, J, including a plurality of conductive layers and insulating layers sequentially bonded from the inside to the outside; the plurality of insulation The layers respectively have a plurality of correspondingly convex cusps, and when the sharp point of the insulating layer of the outer layer breaks, the sharp point of the inner layer of the insulating layer protrudes from the fracture, and the polishing pad can continue to be trimmed; Further, the two sides of the power source are electrically connected to the polishing pad of the adsorbed liquid, the conductive layer of the innermost layer of the trimmer, and a power sensor is electrically connected to the polishing pad for adsorbing the liquid, and the trimmer is respectively The conductive layers of each layer are known by the magnitude of the current or voltage displayed by the power sensor, and the cusps of the insulating layers of the layers of the trimmer are known. 1300736 For other purposes and functions of the present invention, please refer to the drawings and the embodiments, which are described in detail below. [Embodiment] Please refer to Fig. 9 and Fig. 1 for details. The surface structure of the polishing pad conditioner of the present invention is used to improve the service life of the trimmer and has a structure that can be detected; the trimmer 20 of the first embodiment includes a first conductive electrode sequentially bonded from the inside to the outside. The layer 21, the first insulating layer 22, the second conductive layer 23 and the second insulating layer 24; the first insulating layer 22 and the second insulating layer 24 respectively have a plurality of corresponding first sharp points 221 and second sharp points 241, as shown in FIG. When the second sharp point 241 breaks, the first sharp point 221 protrudes from the break, and the polishing pad 4 can continue to be trimmed, thereby improving the service life of the dresser 20, as shown in FIG. The trimmer 20 of the present embodiment is further configured to electrically connect the two ends of the power source with different polarities to the polishing liquid 40 of the adsorbed liquid, the inner conductive layer 21 of the innermost layer of the trimmer 2; and enable a power sensing The first conductive layer 21 and the second conductive layer 23 of each layer of the adsorbent 20 are electrically connected to the liquid, and the current or voltage of the power is sensed by the power sensing. The breakage of the cusp 221 and the second cusp 241 to instantly monitor the damage of the first cusp 221 and the second cusp 24 of the dresser 2 。. Wherein, the power source has a potential difference between the polishing pad 40 and the first conductive layer 21; when the plurality of protruding first inflammatory points 221 and the first sharp point 24 are not broken, the power sensor displays a high voltage, The condition of low current; when the plurality of protruding second sharp points 241 and the first sharp point 221 are broken, the liquid 1300736 adsorbed by the polishing pad 4 will penetrate into the second insulating layer 24 to contact the second conductive layer 23 And electrically connected, or infiltrated into the first insulating layer 22 and electrically connected to the first conductive layer 21, the power sensor will display a voltage drop, the current rises; when the second sharp point 241 When the number of the first sharp points 221 is broken, the power sensor shows that the current value is higher. Please refer to Figures 11 and 12. A second embodiment of the surface structure of the polishing pad conditioner of the present invention, the trimmer 30 has a first conductive layer 31, a first insulating layer 32, a second conductive layer 33, and a second insulating layer 34 which are sequentially bonded from the inside to the outside. The third conductive layer 35 and the third insulating layer 36; the first insulating layer 32, the second insulating layer 34, and the third insulating layer 36 respectively have a first sharp point 321' corresponding to the second sharp point 341 and a third Point 361, as shown in FIG. When the third sharp point 361 breaks, the second sharp point 321 protrudes from the break, and the polishing pad 4〇 can continue to be trimmed as shown in FIG. 12; or when the third sharp point 361 and the second sharp point 341 When the fracture occurs, the first sharp point 321 protrudes from the break, and the polishing pad 4 can continue to be trimmed, thereby improving the service life of the dresser 30. When it is to be detected whether the third cusp 361, the second cusp 341 and the first cusp 321 of the trimmer 30 are broken, the two ends of the power source are respectively electrically connected to the polishing pad 40 which adsorbs the liquid and The first conductive layer 31 is electrically connected to the first conductive layer 31', the second conductive layer 33, the third conductive layer 35, and the polishing pad 40, respectively. As described in the first embodiment, the third sharp point 36, the second sharp point 341 and the first sharp point 321 can be known by the electric conductor 1 displayed by the power detector.
11 1300736 的損壞情況。 上述各實施例的第一導電層可為金屬圓盤,其他間隔排列 的導電層、絕緣層係利用CVD技術製作的。 本發明的修整器係CMP修整器,間隔排列的導電層、絕緣 層亦可擴展至分別具有四層以上者;絕緣層的材料可分別為鑽 石、高分子樹指、陶瓷、立方晶氮化硼(CBN)、及複合材料等。 本發明各實施例之修整器,係分別利用半導體蝕刻技術將 矽晶圓蝕刻出到金字塔形狀,再利用電鑄技術或是灌漿鑄模技 術翻製出陣列的凸出尖點,可將凸出尖點排列成陣,讓凸出尖 點與凸出尖點之間的距離固定,利用金字塔的開口尺寸可以控 制凸出大點的長度,也可以利用光罩的設計控制凸出尖點的密 度及間距。因此,CVD規則排列,能發揮切削力的凸出尖點數 量增加,而且彼此支援,可以掃除死角,涵蓋所有的工作面, 可以大幅提升修整拋光墊之效果。 一般的修整器在斷裂後無法及時偵測到斷裂的情形,只能 以經驗判斷或是檢驗產品後才能判斷鑽石修整器的損壞(磨損) 情況。本發明具有多層表面結構的修整H,除了可以即時監測 凸出尖點賴的情料,當外層的凸出尖點斷裂時,下_層的 凸出尖點依舊财蝴的能力,可提升修整㈣制壽命。、 以上所喊’僅為彻本發明技_容之實施例,任何熟 悉本項技藝者本發贿為之料、變化,皆屬本發明主張 1300736 之專利範圍,而不限於實施例所揭示者。Damage to 11 1300736. The first conductive layer of each of the above embodiments may be a metal disk, and other spaced-apart conductive layers and insulating layers are formed by CVD techniques. The trimmer of the present invention is a CMP conditioner, and the electrically conductive layer and the insulating layer which are arranged at intervals may be extended to have four or more layers respectively; the materials of the insulating layer may be diamond, polymer tree, ceramic, cubic boron nitride, respectively. (CBN), and composite materials. The trimmer of each embodiment of the present invention etches the germanium wafer into a pyramid shape by using a semiconductor etching technique, and then uses an electroforming technique or a grouting mold technique to reproduce the convex cusp of the array, and the protruding tip can be used. The dots are arranged in a matrix to fix the distance between the convex cusp and the convex cusp. The opening size of the pyramid can be used to control the length of the protruding large point, and the design of the reticle can be used to control the density of the convex cusp and spacing. Therefore, the CVD is regularly arranged, the number of protruding cusps which can exert the cutting force is increased, and the mutual support is provided, and the dead angle can be removed, covering all the working faces, and the effect of dressing the polishing pad can be greatly improved. In general, the trimmer cannot detect the breakage in time after the break, and the damage (wear) of the diamond dresser can only be judged after empirical judgment or inspection of the product. The invention has the multi-layer surface structure trimming H, in addition to the fact that the convex cusp point can be monitored immediately, when the convex cusp of the outer layer breaks, the convex cusp of the lower layer can still improve the trimming ability. (4) System life. The above is merely an embodiment of the present invention. Anyone who is familiar with the art of the present invention is subject to the patent, and is not limited to the disclosure of the embodiment. .
13 !3〇〇736 【圖式簡單說明】 圖1為已知拋光墊使用後的示意圖。 圖2為已知拋光塾經修整後的示意圖。 圖3為已知利用電鍍法製作的修整器的示意圖。 圖4為已知利用電鍍法製作的修整器使用後鑽石脫落的示意 圖0 圖5為已知利用硬焊法製作的修整器的示意圖。 圖6為已知利用硬焊法製作的修整器使用後鑽石脫落的示意 圖。13 !3〇〇736 [Simple description of the drawing] Fig. 1 is a schematic view of the known polishing pad after use. Figure 2 is a schematic view of a known polishing crucible after trimming. Fig. 3 is a schematic view of a dresser which is known to be produced by electroplating. Fig. 4 is a schematic view showing the use of a dresser made by electroplating to remove diamonds after use. Fig. 5 is a schematic view of a dresser which is known to be fabricated by a brazing method. Fig. 6 is a schematic view showing the shedding of the diamond after the use of the dresser made by the brazing method.
圖7為已知利用CVD技術製作的鑽石膜的示意圖。 圖8為已知利用CVD技術製作的鑽石膜尖點斷裂的示意圖。 圖9為本發明拋光墊修整器的表面結構的第一實施例的示意 圖。 圖10為本發明的第一實施例絕緣層的尖點斷裂的示意圖。 圖11為本發明拋光墊修整器的表面結構的第二實施例的示意 圖。 、 圖12為本發明的第二實施例絕緣層的尖點斷裂的示意圖。 【主要元件符號說明】Figure 7 is a schematic illustration of a diamond film known to be made using CVD techniques. Figure 8 is a schematic illustration of a diamond film cusp fracture known to be made by CVD techniques. Figure 9 is a schematic view showing a first embodiment of the surface structure of the polishing pad conditioner of the present invention. Figure 10 is a schematic view showing the cusp fracture of the insulating layer of the first embodiment of the present invention. Figure 11 is a schematic view showing a second embodiment of the surface structure of the polishing pad conditioner of the present invention. Figure 12 is a schematic view showing the cusp fracture of the insulating layer of the second embodiment of the present invention. [Main component symbol description]
10、14金屬圓板 12鑽石 131尖點 20、30修整器 22、 32第一絕緣層 23、 33第二導電層 24卜341第二尖點 36第三絕緣層 40拋光墊 11鎳 13鑽石臈 21、31第一導電層 221、321第一尖點 24、34第二絕緣層 35第三導電層 361第三尖點10, 14 metal circular plate 12 diamond 131 cusp 20, 30 trimmer 22, 32 first insulating layer 23, 33 second conductive layer 24 341 second sharp point 36 third insulating layer 40 polishing pad 11 nickel 13 diamond 臈21, 31 first conductive layer 221, 321 first cusp 24, 34 second insulating layer 35 third conductive layer 361 third cusp
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