TWI298339B - High dielectric constant nanocomposite and embedded capacitor comprising the same - Google Patents

High dielectric constant nanocomposite and embedded capacitor comprising the same Download PDF

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TWI298339B
TWI298339B TW92113541A TW92113541A TWI298339B TW I298339 B TWI298339 B TW I298339B TW 92113541 A TW92113541 A TW 92113541A TW 92113541 A TW92113541 A TW 92113541A TW I298339 B TWI298339 B TW I298339B
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Taiwan
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substrate
built
capacitor
dielectric constant
resin
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TW92113541A
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TW200426177A (en
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Chih Ming Hu
Chin Shang Hsu
Lin Bin-Yuan
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Ind Tech Res Inst
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發明所屬之技術領域 本發明係有關於奈〜 電容,特別有關於具有高=二=料及包含此材料之内藏式 此材料之内藏式電容。门;1電《數之奈米複合材料及包含 先前技術 隨著無線通訊產品 的構裝也朝微型化、古jr缚短小發展的趨勢,電子產占 因此如何提高功能性基板命多功能化等等方向發展, 中首要的課題。 、在度,成為電子構裝技術發展 第1 a圖顯示 白知之分離式(( 先與基板1分離之電阻r、電容c、 基板1表面,以提供對於主動元件 能。 screte)基板,其中原 感L等被動元件構裝於 如積體電路2的輔助功FIELD OF THE INVENTION The present invention relates to a nanocapacitor, and more particularly to a built-in capacitor having a high = two material and a built-in material comprising the material. Door; 1 electric "Nano-composite composite material and the prior art. With the construction of wireless communication products, the trend toward miniaturization and short-term development of ancient jr, the electronic production accounted for how to improve the functionality of the functional substrate. The development of the direction, the primary issue. In the degree, it becomes the development of electronic assembly technology. The first figure shows the separation of Baizhi ((the resistor r, the capacitor c, the surface of the substrate 1 is separated from the substrate 1 to provide the active element energy. screte) substrate, where the original A passive component such as a sense L is mounted on an auxiliary work such as the integrated circuit 2

然而由於上述電阻R、雷命Γ ^ . τ _ _ κ尾谷〇、電感L等被動元件佔了 基板1的大部分表面,且隨著電路的複雜化,被動元件的 數$隨之增加,因此造成這類分離式基板在朝微型化發展 時的阻礙。 為了進一步增加被動元件的配置密度,以提高功能性However, since the above-mentioned passive components such as the resistor R, the Thunder, the τ _ _ _ _ _ tail valley, and the inductor L occupy most of the surface of the substrate 1, and as the circuit is complicated, the number of passive components increases accordingly. This type of separate substrate is hindered in the development of miniaturization. To further increase the density of passive components to improve functionality

基板的岔度’目说有整合式基板(integrai substrate) 的提出。 第lb圖顯示一整合式基板。如圖所示,整合式基板與 分離式基板的不同在於將被動元件電阻r、電容C、電感l 等利用基板疊合的方式製作於基板内部,以符合元件高密The thickness of the substrate is described as having an integrated substrate. Figure lb shows an integrated substrate. As shown in the figure, the integrated substrate differs from the separate substrate in that the passive element resistance r, the capacitance C, the inductance l, and the like are laminated on the substrate by means of a substrate overlap to conform to the high density of the element.

〇424-9617TWF(nl);02910038;Renee.ptd 第5頁 1298339 五、發明說明(2) 度化的要求 目前用於製作整合式基板中之電容 ^ 藏式電谷(embedded capacitor),主要剎 I稱為内 咼介電陶瓷粒子(如鈦酸鋇等)混摻製成。 衣,柯脂與 氧樹脂基質中的球形陶莞粒子其偶極排列^ =分,,環 偶極偏極化的效應會被抵銷,因此 丄人,使得電 :數的陶…來提高複合材料介電 使得基板的機械性質降低,其與:以;也=,這不但 7 i:大:下降,因此這也是目前尚無高介;心:ί著 (含有内滅式電容的基板)商品問世=正5式基板 何製備高介電奈米級混成材料, 要原因。因此如 開發的瓶頸與重點。 疋目則電子構裝產業研究 有鑑於此,本發明的目的在於提供一 容製作之高介電常數奈米複合材料,=用於内藏式電 常數奈米複合材料所製作之内藏式電容。ij用上述高介電 ⑴ί:究發現’利用在環氧樹脂基“添力塞士 例如奈米碳管、碳黑與石墨等,σ河:添加導電粒子, =質(當奈来碳管含量為2.5phmn樹月旨的介 35 0 ),進而可降低介電陶瓷粒子必 枯、;丨電常數值達 增加基材本身的脆性,並可 、、、充量,因而不會 了維持環氧樹脂的機械特性。 發明内容 因此,本發明提出-種高介電常數太乎匕人 I P要又不、水後合材料,其 第6頁 0424-9617TlF(nl);02910038;Renee.ptd 1298339〇424-9617TWF(nl);02910038;Renee.ptd Page 5 1298339 V. Description of invention (2) The requirements for tempering are currently used to make capacitors in integrated substrates. The main brakes are used. I is called a mixture of internal tantalum dielectric ceramic particles (such as barium titanate). The effect of the dipole arrangement of the spherical ceramics in the base of the grease and the oxygen resin matrix is ^=, and the effect of the ring dipole polarization will be offset, so that the electricity is increased by the number of ceramics... The dielectric of the material causes the mechanical properties of the substrate to be reduced, and it is not only 7 i: large: falling, so this is also currently no high-intermediate; heart: 基板 (substrate with internal-extinguishing capacitor) Adventive = positive 5 type substrate how to prepare high dielectric nano-scale mixed materials, the reason. Therefore, such as the bottleneck and focus of development. In view of the above, the object of the present invention is to provide a high dielectric constant nano composite material prepared by a capacitor, and a built-in capacitor for a built-in electric constant nano composite material. . Ij uses the above high dielectric (1) ί: to find out that 'utilized in epoxy resin base', such as carbon nanotubes, carbon black and graphite, etc., σ River: adding conductive particles, = quality (when the carbon nanotube content The 2.5 phmn tree is designed to reduce the dielectric ceramic particles, and the dielectric constant value increases the brittleness of the substrate itself, and can be charged, so that the epoxy is not maintained. The mechanical properties of the resin. SUMMARY OF THE INVENTION Accordingly, the present invention proposes a high dielectric constant that is too devoid of IP, no water, a post-water composite, page 6 0424-9617TlF(nl); 02910038; Renee.ptd 1298339

五、發明說明(3) 包括一高分子基材、一 基材中,以及一介電陶=:J:電粒子分佈於該高分子 該複合材料的介電常數ί:子二佈於該高分子基材中’且 板上形成有- ί t全::藏式,f ’包括-基板,於此基 米複合材料層,其中::半=-金屬層上形成有-奈 以上,苴至小勺入女 不米複6材料層的介電常數為1 0 0V. Description of the invention (3) comprising a polymer substrate, a substrate, and a dielectric ceramic =: J: electrical particles are distributed in the polymer. The dielectric constant of the composite material is ί: In the molecular substrate 'and the plate is formed with - ί t:: Tibetan, f 'including - substrate, the base of the composite layer, wherein:: half = - metal layer formed above - Nai, 苴 to The dielectric constant of the small spoon into the female material layer is 1 0 0

一碳= i二高分子基材、一介電陶竞粒子以及 厌糸不未¥電粒子分佈於此高分子基材中,而於此太乎 複合材料層上方並形成有一第三金屬;t Ua carbon=i two polymer substrate, a dielectric ceramic particle, and an anaesthetic particle are distributed in the polymer substrate, and the third metal is formed above the composite layer; U

發明詳細說明 讲制f據/本f明’上述高分子基材較佳為利用熱固性樹月 所製作,例如環氧樹腊、聚亞醯胺、BT樹脂 (bismaleinude/triazine)、氰酸醋樹脂(cyanate ester)、聚二甲基苯氧樹脂[P〇ly(2,6-diffiethylphenyl ether)]或其組合。 ,據本發明,上述碳系奈米導電粒子可為奈米碳管、 奈米碳球、碳六十、碳黑、石墨或其組合。其含量較佳名 0·5〜1Ophrs ° 'DETAILED DESCRIPTION OF THE INVENTION The above-mentioned polymer substrate is preferably made of a thermosetting tree, such as epoxy wax, polyamidoamine, BT resin (bismaleinude/triazine), cyanate resin (cyanate ester), polydimethyl phenoxy resin [P〇ly (2,6-diffiethylphenyl ether)] or a combination thereof. According to the present invention, the carbon-based nano conductive particles may be carbon nanotubes, carbon nanotubes, carbon sixty, carbon black, graphite or a combination thereof. Its content is better known as 0·5~1Ophrs ° '

,據本發明,上述介電陶瓷粒子可為鉛鎂鈮、鈦酸 鋇、氧化矽、氧化鋁、氧化鈦或其組合。其含量較佳為 0〜60vol% ’其粒徑較佳介於1〇〇ηιη至15〇〇nm間。 藉由本發明所提供之高介電常數奈米複合材料,可符 合整合式基板對内藏式電容材料的需求,突破現有電容、According to the present invention, the above dielectric ceramic particles may be lead magnesium bismuth, barium titanate, cerium oxide, aluminum oxide, titanium oxide or a combination thereof. The content thereof is preferably from 0 to 60 vol%, and the particle diameter thereof is preferably from 1 〇〇 ηη to 15 〇〇 nm. The high dielectric constant nano composite material provided by the invention can meet the requirements of the integrated substrate for the built-in capacitor material, and break through the existing capacitance,

------- 五、發明說明(4) ------ ί:庫:ΞΪ機能材料之瓶頸,並透過應用製程、設計、 度整合性;=立*完成先進機能内藏型高功能、高密 丨土 I板產業之建立。 下文之上述目的、特徵和優點更明顯易懂, 下:特舉出較佳實施例,並配合所附圖示,作詳細說明如 實施方式 f八::!:個實施例說明本發明。第一實施例中利用在 门刀土材中添加碳系奈米導電粒子以製作高介雷賫皇太 2複合材料;第二實施例中利用在高分子基:;;:;; ί=電粒子以及介電嶋子以製作高介電常數奈‘複 =個實施例中使用之碳系奈米導電粒子有奈米 石反糸^電粒子等,以下先個別說明其製備方式。另外,雖 %例中以環氧樹脂為高分子基材,但適用於本發明 之,^子並不限於此,亦可使用聚亞醯胺(p〇lyimide)、 才ί 月曰(bismaleimide/triazine)、氰酸酉旨樹脂(cyanate _ ester)、聚二甲基苯氧樹脂[p〇ly(2,6 — dimethyiphenyi ether)]或其與環氧樹脂之組合。 奈米碳管(CNT )合成 1.取定量之Μ(Ν〇3)χ(其中μ主要為Fe與Ni)於去離水 中,加入檸檬酸攪拌使之完全溶解。------- V. Invention description (4) ------ ί: Library: bottleneck of functional materials, and through application process, design, degree integration; = Li* complete advanced function built-in type The establishment of a high-function, high-density bauxite I-board industry. The above-mentioned objects, features, and advantages will be more apparent from the following detailed description of the preferred embodiments. An embodiment illustrates the invention. In the first embodiment, a carbon-based nano-conducting particle is added to the door-knife material to prepare a high-density 賫 賫 太 2 2 composite material; in the second embodiment, the polymer base is used in the polymer matrix:;;;; Dielectric tweezers are used to produce a high dielectric constant, and the carbon-based nano-conducting particles used in the examples are nano-negative, electro-chemical particles, etc., and the preparation methods thereof will be individually described below. Further, in the example, the epoxy resin is used as the polymer substrate, but it is suitable for use in the present invention, and the present invention is not limited thereto, and polyplylimide or bismaleimide may be used. Triazine), cyanate _ ester, polydimethyl phenoxy resin [p〇ly (2,6 — dimethyiphenyi ether)] or a combination thereof with an epoxy resin. Synthesis of carbon nanotubes (CNT) 1. Take a quantitative amount of Μ(Ν〇3)χ (where μ is mainly Fe and Ni) in deionized water, and add citric acid to stir to completely dissolve.

0424-9617TWF(η1);02910038;Renee.p td 第8頁 1298339 五、發明說明(5) 班立2·濃縮移除溶劑,置於1〇〇。〇烘箱内乾燥,再於空氣 裱境下70 0 °C高溫爐鍛燒卜2hrs,此產物為金屬觸媒,冷 卻至室溫後以研蛛研磨備用。 3 ·取定量之金屬觸媒分散於乙醇溶液中,經超音波震 盪5〜1 Omins後,滴入石英基板上,加熱至丨〇〇〜丨2〇 i將乙 醇揮發。 4·將含有觸媒之石英基板置於石英反應管中,通入氣 體(虱氣、氬氣與乙炔),設定反應溫度(65〇〜8〇〇 °c)與氣 體流量(2 0〜4 0 m 1 / m i η)後開始進行奈米碳管合成。 5 ·待反應3 0〜1 2 0m i ns後,冷卻至室溫,產物為奈米碳 管(Multi-wal1 CNT)。 第一實施例 高介電環氧樹脂/碳系奈米導電粒子複合材料合成 1. 取環氧樹脂(Union Carbide Co.,ERL 4221, 3,4-epoxycyclohexylmethyl-3, 4-epoxy-cyclohexane-ca rboxylate)5.0g、硬化劑(MeHHPA,0424-9617TWF(η1);02910038;Renee.p td Page 8 1298339 V. INSTRUCTIONS (5) Ban Li 2·concentrate remove solvent and place it at 1〇〇. The oven is dried in an oven and then calcined in a high temperature furnace at 70 ° C for 2 hrs. The product is a metal catalyst. After cooling to room temperature, it is ground with a spider. 3 · Take a quantitative amount of the metal catalyst dispersed in the ethanol solution, oscillate 5~1 Omins by ultrasonic wave, drop it onto the quartz substrate, and heat it to 丨〇〇~丨2〇 i to evaporate the alcohol. 4. Place the quartz substrate containing the catalyst in a quartz reaction tube, and pass gas (helium, argon and acetylene) to set the reaction temperature (65〇~8〇〇°c) and the gas flow rate (2 0~4). The carbon nanotube synthesis started after 0 m 1 / mi η). 5 · After reacting 3 0~1 2 0 m i ns, cool to room temperature and the product is a carbon nanotube (Multi-wal1 CNT). First Embodiment Synthesis of High Dielectric Epoxy/Carbon Nano Conductive Particle Composites 1. Take epoxy resin (Union Carbide Co., ERL 4221, 3, 4-epoxycyclohexylmethyl-3, 4-epoxy-cyclohexane-ca Rboxylate) 5.0g, hardener (MeHHPA,

Hexahydro-4-methylphthalic anhydride ) 5· Og、觸媒 (BDMA,N,N_dimethyl benzylamine)(K25g與溶劑 (acetone)(依黏度調整添加量)於室溫下攪拌均勻,再加 入奈米碳管0.5〜lOphrs與分散劑(Brij56),球磨分散 12hrs 〇 2. 將配置完成的生膠水(v a r n i s h )倒入模框中,於8 0 °C高真空下抽3hrs,直到沒有氣泡產生。Hexahydro-4-methylphthalic anhydride ) 5 · Og, catalyst (BDMA, N, N_dimethyl benzylamine) (K25g and solvent (according to the viscosity adjustment), stir at room temperature, then add carbon nanotubes 0.5~ lOphrs and dispersant (Brij56), ball milled for 12hrs 〇2. Pour the finished varnish into the mold frame and pump for 3hrs under high vacuum at 80 °C until no bubbles are formed.

0424-9617TWF(η1);02910038;Renee.p t d0424-9617TWF(η1);02910038;Renee.p t d

—1298339 五、發明說明(6) 3·破真空,將模框移出至高溫烘箱中,在12〇下預 硬化(procuring ) 20mins,再升溫至丨⑼它硬化lhrs。 坚〆4·待回溫至室溫,取出硬化完成的板材,即為高介電 %氧樹脂/奈米碳管複合材料,其SEM圖如第2圖所示。 〆5 ·依照上述方法,以奈米碳黑與石墨等導電粒子(碳 黑平均粒徑為lOnm〜70nm,石墨平均粒徑為8〇〇〜1〇〇〇· 代替奈米碳管’進行高介電環氧樹脂複合材料樣品的製 備0 6.上述樣品之介電性質以HP42 9 1A RF阻抗儀於當况$ J下測試,所得結果如表一所示。由結果顯 ^”電,環氧樹月旨’其介電常數均較添加力前= 夕(一般%氧樹脂之介電常數為3 - 4之間),卢苴曰ϋ許 碳管以及碳黑,提高介電性的效果尤佳。 U 〃、是奈米 _—1298339 V. INSTRUCTIONS (6) 3. Break the vacuum, remove the mold frame into a high temperature oven, pre-harden at 20 Torr for 20 mins, and then warm to 丨(9) to harden lhrs. 〆4·When the temperature is raised to room temperature, the hardened sheet is taken out, which is a high dielectric % oxy-resin/nanocarbon tube composite. The SEM image is shown in Fig. 2. 〆5 · According to the above method, conductive particles such as nanocarbon black and graphite (having an average particle diameter of carbon black of lOnm to 70 nm, and an average particle diameter of graphite of 8 〇〇 to 1 〇〇〇· instead of carbon nanotubes) are high. Preparation of Dielectric Epoxy Resin Composite Samples 0 6. The dielectric properties of the above samples were tested with the HP42 9 1A RF Impedance Meter under the condition of $ J. The results are shown in Table 1. The results are shown in the figure. Oxygen tree month's dielectric constant is higher than the addition force before = eve (generally, the dielectric constant of oxygen resin is between 3 and 4), Lu Xun carbon tube and carbon black, improve the dielectric effect Especially good. U 〃, is nano _

0424-9617TWF(nl);02910038;Renee.ptd 第10頁 1298339 五、發明說明(7) 表一高介電環氡樹脂/導電粒子複合材科之介電常數0424-9617TWF(nl);02910038;Renee.ptd Page 10 1298339 V. INSTRUCTIONS (7) Table 1 Dielectric constant of high dielectric ring bismuth resin/conductive particle composite

Epoxy 碳系奈米導電粒子 (phrs) Dk (1MHz) Dk (30MHz) Dk (100MHz) E 4221 — 3.2 3.0 3.0 E 4221 奈米碳管 (0.5) 188 31 13 E 4221 奈米碳管 (2.5) 353 230 123 E 4221 奈米碳管 (5.〇) 484 361 263 E 4221 碳黑(Carbot 2000) (1.0) 188 50 15 E 4221 碳黑(Carbot 2000) (5.0) 737 386 173 E 4221 碳黑(Degussa XE2B) (5.0) 236 215 145 E 4221 石墨(Aldrich) (5.0) 11 5.9 5.0 第二實施例 高介電環氧樹脂/碳系奈米導電粒子/陶瓷粒子複合材料合Epoxy carbon-based nano-conducting particles (phrs) Dk (1MHz) Dk (30MHz) Dk (100MHz) E 4221 — 3.2 3.0 3.0 E 4221 Carbon nanotubes (0.5) 188 31 13 E 4221 Carbon nanotubes (2.5) 353 230 123 E 4221 Carbon nanotubes (5. 〇) 484 361 263 E 4221 Carbon black (Carbot 2000) (1.0) 188 50 15 E 4221 Carbon black (Carbot 2000) (5.0) 737 386 173 E 4221 Carbon black (Degussa XE2B) (5.0) 236 215 145 E 4221 Graphite (Aldrich) (5.0) 11 5.9 5.0 Second Embodiment High Dielectric Epoxy/Carbon Nano Conductive Particles/Ceramic Particle Composite

0424-9617IW(nl) ;02910038;Renee.ptd 第11頁 1298339 五、發明說明(8) 成 1.取環氧樹脂(Union Carbide Co,,ERL 4221, 3, 4-epoxycyclohexylmethyl-3, 4-epoxy-cyclohexane~ca rboxylate)5.0g、硬化劑(MeHHPA,0424-9617IW(nl) ;02910038;Renee.ptd Page 11 1298339 V. Description of Invention (8) 1. Take epoxy resin (Union Carbide Co, ERL 4221, 3, 4-epoxycyclohexylmethyl-3, 4-epoxy -cyclohexane~ca rboxylate) 5.0g, hardener (MeHHPA,

Hexahydro-4-methy 1phtha1ic anhydride)5. Og、觸媒 (BDMA,N,N-dimethyl benzylamine)0.25g與溶劑 (acetone)(依黏度調整添加量)於室溫下攪拌均勻,再加 入奈米碳管0· 5〜5phrs與介電陶瓷粒子1 〇〜6〇ν〇ι%(陶莞粒 子種類與份量如表二所示)球磨授拌1 2 h r s。 2.將配置完成的生膠水(v a r n i s h)倒入模框中,於8 〇 C南真空下抽3 h r s ’直到沒有氣泡產生。 3 ·破真空,將模框移出至高溫烘箱中,在丨2 〇。〇下預 硬化(precuring ) 20mins,再升溫至16〇。〇硬化1 hrs。 4 ·待回溫至室溫’取出板材即為高介電環氧樹脂/奈 米碳管/陶瓷粒子複合材料,其SEM圖如第3圖所示。 5·如表二所示之介電陶瓷粒子中,其平均粒徑介於 100nm 至1500nm 間。 6·上述樣品之介電性質以HP42 9 1 A RF阻抗儀於常溫常 壓下測試,所得結果如表二所示。由結果顯示,加入碳系 奈米導電粒子的環氧樹脂’其介電常數均較添加前增加許 多。Hexahydro-4-methy 1phtha1ic anhydride) 5. Og, catalyst (BDMA, N, N-dimethyl benzylamine) 0.25g and solvent (according to the viscosity adjustment) at room temperature, evenly add nano carbon Tube 0·5~5phrs with dielectric ceramic particles 1 〇~6〇ν〇ι% (pottery type and amount of pottery as shown in Table 2) ball milled to mix 1 2 hrs. 2. Pour the finished raw glue water (v a r n i s h) into the mold frame and draw 3 h r s ' under a vacuum of 8 〇 C until no bubbles are formed. 3 · Break the vacuum and remove the mold frame into the high temperature oven at 丨2 〇. The underarm is precured for 20 mins and then warmed to 16 Torr. It hardens for 1 hrs. 4 · Waiting for warming to room temperature 'The plate is taken out as a high dielectric epoxy/carbon nanotube/ceramic particle composite. The SEM image is shown in Figure 3. 5. The dielectric ceramic particles shown in Table 2 have an average particle diameter of between 100 nm and 1500 nm. 6. The dielectric properties of the above samples were tested under normal temperature and pressure using an HP42 9 1 A RF impedance meter. The results are shown in Table 2. As a result, it was revealed that the epoxy resin of the carbon-based nano-conductive particles had a much larger dielectric constant than that before the addition.

1298339_ 五、發明說明(9) 表二高介電環氡樹脂/碳系奈米導電粒子/介電陶瓷粒子複 合材料之介電常數 碳系奈 米 Dk Epoxy導電粒 陶瓷粒子 子 Dk (30MHz) Dk (vol%) (1MHz) (100MHz) (phrs) E 4221 - — 3.2 3.0 3.0 PMN 8.6 E 4221 - (20) S.8 8.5 BaTi03 11.7 E 4221 - (20) 12.2 11.6 E 4221 CNT(5) PMN 127 69.0 42.6 (20) E 4221 CNT(5) PMN 315 46.4 29.2 (30) E 4221 CNT(5) BaTi03 402 88.0 44.9 (20) 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明,任何熟習此技藝者,在不脫離本發明之精神 和範圍内,當可作些許之更動與潤飾,因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。1298339_ V. INSTRUCTIONS (9) Table 2 High dielectric ring tantalum resin/carbon-based nano-conducting particles/dielectric ceramic particle composite dielectric constant carbon-based nano Dk Epoxy conductive grain ceramic particle Dk (30MHz) Dk (vol%) (1MHz) (100MHz) (phrs) E 4221 - — 3.2 3.0 3.0 PMN 8.6 E 4221 - (20) S.8 8.5 BaTi03 11.7 E 4221 - (20) 12.2 11.6 E 4221 CNT(5) PMN 127 69.0 42.6 (20) E 4221 CNT (5) PMN 315 46.4 29.2 (30) E 4221 CNT (5) BaTi03 402 88.0 44.9 (20) Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. The invention is to be understood as being limited by the scope of the appended claims.

1298339 圖式簡單說明 第la圖顯示一習知之分離式(discrete)基板。 第1 b圖顯示一整合式基板。 第2圖係為第一實施例中所得高介電環氧樹脂/奈米碳 管複合材料之SEM圖。 第3圖係為第二實施例中所得高介電環氧樹脂/奈米碳 管/陶瓷粒子複合材料之SEM圖。 符號說明 1〜基板; R〜電阻元件 L〜電感元件 C〜電容元件 1C〜積體電路 馨1298339 BRIEF DESCRIPTION OF THE DRAWINGS The first drawing shows a conventional discrete substrate. Figure 1 b shows an integrated substrate. Fig. 2 is an SEM image of the high dielectric epoxy/nanocarbon nanotube composite obtained in the first embodiment. Figure 3 is an SEM image of the high dielectric epoxy/nanocarbon tube/ceramic particle composite obtained in the second embodiment. DESCRIPTION OF SYMBOLS 1~substrate; R~resistive element L~inductive element C~capacitive element 1C~Integrated circuit

0424-9617TWF(nl);02910038;Renee.ptd 第14頁0424-9617TWF(nl);02910038;Renee.ptd第14页

Claims (1)

,::¾ 泰 1298339 'lu? 六、申請專利範圍 ' . . --------_ ' 1 · 一種高介電常數奈米複人 容(embedded Capacitor )的制^材料,適用於内藏式電 -高分子基材; 衣作’包括: 一碳系奈米導電粒子分佈於 、 一介電陶瓷粒子分佈於該言^冋/刀子基材中,以及 且該複合材料的介電常數二^子基材中, ?如由咬直夺丨外闲斤 ;頻率1MHz為1〇〇以上。 2 ·如申请專利範圍第1項所 材料,JL中兮古八工m、 述之高介電常數奈米複合 材枓,其中忒同分子基材為熱固 3 ·如申請專利範圍第1項 '曰 — 材料,其中該高分子基材為产」L之兩’丨電吊數奈米複合 脂、氰酸醋樹脂、聚二甲ίΡ樹脂、聚亞酿胺、^樹 / , ^ ^ # 卷本氣樹脂或其組合。 4 ·如申请專利範圍第1 Jg Θ Ψ β π $ a 1 員所述之高介電常數奈米複合 # > +、# s i ^ V電杈子為奈米碳管、奈米碳球、 石反六十、叾反黑、石墨或其組合。 5 ·如申凊專利範圍第1項 从把 ^ ^ ^ ^ 員所述之咼介電常數奈米複合 材枓,其中该碳系奈米導雷私^人 e l由士主宙立 寬粒子含量為0.5]〇Phrs。 6 ·如申δ月專利範圍第1 ^ +4-,i Φ ^ ^ ^ ^ ^ 員所述之高介電常數奈米複合 ^ η ^ ,,,,. 子為鉛鎂鈮、鈦酸鋇、氧化矽、 乳化紹、乳化鈦或其組合。 7 ·如申請專利範圍第]^ 1 姑料,苴Φ兮八Φf 1項所述之高介電常數奈米複合 材枓,其中该介電陶瓷粒子含 8.如申請專利範圍第1ιρ3:、+為0〜6〇V〇1%。 # ^i φ β Α φ >弟項所述之高介電常數奈米複合 p, + +的粒徑介於1 OOnm至1 5 0 0nm 間0,::3⁄4 Thai 1298339 'lu? VI. Patent application scope ' . . --------_ ' 1 · A high dielectric constant nanocapacitor (embedded Capacitor) material, suitable for a built-in electro-polymer substrate; a coating comprising: a carbon-based nano-conductive particle distributed, a dielectric ceramic particle distributed in the substrate, and a dielectric of the composite In the constant two sub-substrate, such as by biting straight and smashing; the frequency of 1MHz is more than 1〇〇. 2 · As in the material of the first paragraph of the patent application, JL is an ancient eight-worker m, described as a high dielectric constant nanocomposite, in which the molecular substrate of the same molecule is thermoset 3 · as claimed in the first item '曰—Materials, in which the polymer substrate is produced. L's two '丨 electric hanging number nano composite grease, cyanic acid vinegar resin, polydimethyl hydrazine resin, poly-branched amine, ^ tree / , ^ ^ # A coil of gas resin or a combination thereof. 4 · If the patent application scope is 1 Jg Θ Ψ β π $ a 1 member of the high dielectric constant nanocomposite # > +, # si ^ V electric tweezers are carbon nanotubes, nano carbon spheres, Stone anti-60, anti-black, graphite or a combination thereof. 5 · For example, the first item of the patent scope of the application is from the dielectric constant nanocomposite of the 咼 所述 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ For 0.5] 〇Phrs. 6 · For the δ month patent range 1 ^ +4-, i Φ ^ ^ ^ ^ ^ The high dielectric constant nanocomposite ^ η ^ , , , , . . . is lead magnesium bismuth, barium titanate , cerium oxide, emulsified, emulsified titanium or a combination thereof. 7 · As claimed in the patent application, the high dielectric constant nanocomposite crucible described in 苴Φ兮八Φf, wherein the dielectric ceramic particle contains 8. As claimed in the first paragraph ιρ3: + is 0~6〇V〇1%. # ^i φ β Α φ > The high dielectric constant nanocomposite described by the younger brother p, + + has a particle size between 1 00 nm and 1 500 nm. 0424-9617TWF(nl);02910038;Renee.ptd 第15頁 1298339 圍 種内藏式電各(embedded capacitor),包括: 一基板; 屬層形成於該基板上; 止★人不米複合材料層形成於該第一金屬層上,其中該奈 二複口材料層的介電常數為1〇〇以上,其至少包含有一高 材乂及 石反糸奈米導電粒子分佈於該高分子基材 中;以及 一第二金屬層形成於該奈米複合材料層之上方。0424-9617TWF(nl);02910038;Renee.ptd Page 15 1298339 The built-in embedded capacitor includes: a substrate; a genus layer formed on the substrate; On the first metal layer, wherein the nano-refill material layer has a dielectric constant of 1 〇〇 or more, and at least one high-material bismuth and stone ruthenium-containing conductive particles are distributed in the polymer substrate; And a second metal layer is formed over the nano composite layer. 10 ·如申請專利範圍第9項所述之内藏式電容,其中該 基板為矽基板或銅箔基板。 ^ 11 ·如申請專利範圍第9項所述之内藏式電容,其中該 高分子基材為熱固性樹脂。、 1 2 ·如申請專利範圍第9項所述之内藏式電容,其中該 高分子基材為環氧樹脂、聚亞醯胺、BT樹脂、氰酸酯樹 脂、聚二甲基苯氧樹脂或其組合。 1 3·如申請專利範圍第9項所述之内藏式電容,其中該 石反系奈米導電粒子為奈米碳管、奈米碳球、碳六十、碳 黑、石墨或其組合。 1 4 ·如申請專利範圍第9項所述之内藏式電谷’其中該 石反糸奈米導電粒子含量為〜lOphrs。 1 5 ·如申請專利範圍第9項所述之内藏式電容’其中更 包含一介電陶瓷粒子分佈於該高分子基材中。 1 6.如申請專利範圍第丨5項所述之内藏式電容’其中 該介電陶瓷粒子為鉛鎂鈮、鈦酸鋇、氧化矽、氧化鋁、氧10. The built-in capacitor of claim 9, wherein the substrate is a germanium substrate or a copper foil substrate. [11] The built-in capacitor of claim 9, wherein the polymer substrate is a thermosetting resin. 1 2 · The built-in capacitor according to claim 9 wherein the polymer substrate is epoxy resin, polyamine, BT resin, cyanate resin, polydimethyl phenoxy resin Or a combination thereof. 1 3 The built-in capacitor of claim 9, wherein the stone counter-anoe conductive particles are carbon nanotubes, carbon spheres, carbon sixty, carbon black, graphite or a combination thereof. 1 4 - The built-in electric valley as described in claim 9 wherein the conductive material content of the stone is ~10 phrs. 1 5 The built-in capacitor as described in claim 9 further includes a dielectric ceramic particle distributed in the polymer substrate. 1 6. The built-in capacitor as described in claim 5, wherein the dielectric ceramic particles are lead magnesium bismuth, barium titanate, cerium oxide, aluminum oxide, oxygen 1298339__ 六、申請專利範圍 化鈦或其組合。 1 7.如申請專利範圍第1 5項所述之内藏式電容,其中 該介電陶兗粒子含量為0〜60vol%。 1 8.如申請專利範圍第1 5項所述之内藏式電容,其中 該介電陶瓷粒子的粒徑介於lOOnm至1 5 0 0nm間。1298339__ VI. Application for patent scope Titanium or a combination thereof. 1 7. The built-in capacitor of claim 15, wherein the dielectric ceramic particle content is 0 to 60 vol%. 1 8. The built-in capacitor of claim 15 wherein the dielectric ceramic particles have a particle size between 100 nm and 1500 nm. 0424-9617TWF(nl);02910038;Renee.ptd 第17頁0424-9617TWF(nl);02910038;Renee.ptd Page 17
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI396453B (en) * 2009-08-21 2013-05-11 Physics Hsu Radio frequency device resonance antenna
US10070518B2 (en) 2013-02-06 2018-09-04 Isola Usa Corp. Prepregs and laminates having homogeneous dielectric properties

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI396453B (en) * 2009-08-21 2013-05-11 Physics Hsu Radio frequency device resonance antenna
US10070518B2 (en) 2013-02-06 2018-09-04 Isola Usa Corp. Prepregs and laminates having homogeneous dielectric properties
US10582614B2 (en) 2013-02-06 2020-03-03 Isola Usa Corp. Prepregs and laminates having homogeneous dielectric properties
US11116078B2 (en) 2013-02-06 2021-09-07 Isola Usa Corp. Prepregs and laminates having homogeneous dielectric properties

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