1296893 (1) 九、發明說明 « 【發明所屬之技術領域】 . 本發明係關於適合照射含有紫外光之瞬間之較大強度 之光能量之閃光放電燈及利用其之光能量照射裝置。 【先前技術】 對將由氙所構成之放電媒體封入透光性細長氣密容器 〇 之內部所形成之閃光放電燈供應脈衝狀燈電流進行放電， 可以產生瞬間之較大強度之閃光，亦即，可以產生瞬間之 含有紫外光、可見光、以及紅外光之放射。利用照射該閃 光放電燈之閃光發光，可以實施半導體材料之退火或割斷 等半導體及液晶處理分野等各種分野之表面改質、以及表 面加熱及表面殺菌等之表面處理。 傳統上，此種光照射主要係利用雷射或鹵素燈，然而 ，利用複數並列配置之上述閃光放電燈取代雷射或鹵素燈 ; ，可以在極短時間內對相對較大面積之被照射物全體同時 實施光照射。此外，因爲閃光放電燈相對較易實現燈之長 尺寸化，故在實現被照射體之大面積化上也較爲有利。 使用於上述用途之閃光放電燈，係由細長氣密容器之 石英玻璃所構成，其構造上，係氣密容器之兩端內部封裝 著一對電極，將氙（Xe)等之稀有氣體封入氣密容器之內 部，而且，以緊貼於氣密容器之外側之方式配設著觸發電 極。 在4()μΡ之電容器之充電電壓爲6kV時，以電感爲 (2) 1296893 ΟμΗ之放電電路實施以13.3kPa之壓力封入氙當做放電媒 體使用之閃光放電燈之閃光亮燈，其分光分布如第1 1圖 所示。 第1 1圖係傳統上之封入氙之閃光放電燈之分光分布 曲線圖。該分光分布係含有紫外線波段、可見光波段、以 及紅外線波段之連續發光，爲接近太陽光之分光分布之白 色發光。因此，該閃光放電燈及上述亮燈條件被視爲擬似 D 太陽光源使用。此外，第11圖之光譜分布時，波長200〜 4 0 0nm之紫外光波段之相對放射能量大約爲7.1%，亦即， 相對UV放射能量大約爲7.1 %。 將閃光放電燈之閃光發光利用於上述之表面等時，波 長200〜400nm之波段之紫外光之相對放射能量可有效發 揮作用。亦即，紫外光量若增加的話，可以增加表面吸收 量、增加表面加熱效果、以及因爲波長200〜3 OOnm之短 波長紫外光之增加而獲得較大的殺菌效果。 ] 傳統上，爲了要增加遠紫外波段之放射強度來獲得較 高之殺菌效果，除了稀有氣體以外，尙另外封入銻或銻化 合物之殺菌用閃光放電燈爲大家所熟知（參照專利文獻1 )° 〔專利文獻1〕日本特開200 1 -068057號公報 【發明內容】 然而，以專利文獻1而言，閃光放電時’封入之鍊必 須處於蒸氣之狀態，因此，最好能加熱至200°〇以上之溫 (3) 1296893 度。因此，在閃光放電燈之周圍配設加熱手段來對閃光放 電燈進行加熱。因此，光源裝置變得更爲複雜且大型化’ 此外，因爲使用加熱能量，而有能量效率降低的問題。 針對上述問題，本發明者檢討如何增加閃光放電燈之 紫外光，首先，針對閃光放電燈之發光機構進行調查。閃 光放電燈之發光大致可分成以下3種。 (1 ) f-b躍遷所導致之連續光譜（短波長波段-可見光 J 波段）1296893 (1) Nine, the invention is related to the invention. The present invention relates to a flash discharge lamp suitable for irradiating light energy having a large intensity at the moment of ultraviolet light, and a light energy irradiation device using the same. [Prior Art] Discharging a pulsed lamp current by a flash discharge lamp formed by enclosing a discharge medium composed of tantalum into a light-transmissive elongated airtight container, can generate an instantaneous high-intensity flash, that is, It can produce transient radiation containing ultraviolet light, visible light, and infrared light. By the flash light emitted from the flash discharge lamp, surface modification of various fields such as semiconductor and liquid crystal processing, such as annealing or cutting of the semiconductor material, and surface treatment such as surface heating and surface sterilization can be performed. Conventionally, such light irradiation mainly utilizes a laser or a halogen lamp. However, the above-mentioned flash discharge lamp of a plurality of parallel arrangement is used instead of a laser or a halogen lamp; and a relatively large area of the irradiated object can be irradiated in a very short time. Light irradiation is performed at the same time. Further, since the flash discharge lamp is relatively easy to realize the lengthening of the lamp, it is also advantageous in realizing a large area of the irradiated body. The flash discharge lamp used in the above-mentioned use is composed of quartz glass of an elongated airtight container, and is constructed such that a pair of electrodes are enclosed inside both ends of the airtight container, and a rare gas such as xen is sealed. The inside of the dense container is provided with a trigger electrode in such a manner as to be in close contact with the outer side of the airtight container. When the charging voltage of the capacitor of 4 () μΡ is 6 kV, the discharge circuit with the inductance of (2) 1296893 ΟμΗ is sealed with a flash of 13.3 kPa, and the flash discharge lamp used as the discharge medium is illuminated. Figure 1 shows. Fig. 1 is a graph showing the spectral distribution of a flash discharge lamp that has been conventionally enclosed. The spectral distribution includes continuous light emission in an ultraviolet ray band, a visible light band, and an infrared ray band, and is white luminescence close to the light distribution of sunlight. Therefore, the flash discharge lamp and the above lighting conditions are considered to be used as a pseudo-D solar source. Further, in the spectral distribution of Fig. 11, the relative radiation energy of the ultraviolet light band of the wavelength of 200 to 400 nm is about 7.1%, that is, the relative UV radiation energy is about 7.1%. When the flash light of the flash discharge lamp is used for the above surface or the like, the relative radiation energy of the ultraviolet light having a wavelength of 200 to 400 nm can be effectively exerted. That is, if the amount of ultraviolet light is increased, the surface absorption amount, the surface heating effect, and the increase of the short-wavelength ultraviolet light having a wavelength of 200 to 300 nm can be increased to obtain a large sterilization effect. Conventionally, in order to increase the radiation intensity in the far ultraviolet band to obtain a high bactericidal effect, in addition to the rare gas, a sterilizing flash discharge lamp in which a ruthenium or osmium compound is additionally enclosed is well known (refer to Patent Document 1). [Patent Document 1] Japanese Laid-Open Patent Publication No. 2001-068057. SUMMARY OF THE INVENTION However, in Patent Document 1, the 'enclosed chain must be in a vapor state during flash discharge, and therefore, it is preferable to heat it to 200°. Above temperature (3) 1296893 degrees. Therefore, a heating means is provided around the flash discharge lamp to heat the flash discharge lamp. Therefore, the light source device becomes more complicated and large-sized. Further, since the heating energy is used, there is a problem that the energy efficiency is lowered. In response to the above problems, the inventors reviewed how to increase the ultraviolet light of a flash discharge lamp. First, an investigation was made on the light-emitting mechanism of the flash discharge lamp. The luminescence of the flash discharge lamp can be roughly classified into the following three types. (1) Continuous spectrum caused by f-b transition (short wavelength band - visible J band)
Xe + + e-->Xe + h z;(光） (2 ) f-f躍遷所導致之連續光譜（紅外波段）Xe + + e-->Xe + h z; (light) (2) continuous spectrum caused by f-f transition (infrared band)
Xe + + ef->Xe + + e* + h υ (光） (3 )激發原子放射之光譜（其他之輝線光譜） Xe*->Xe*，+h υ (光） 此外，上述記號代表以下所示之意義。Xe + + ef->Xe + + e* + h υ (light) (3) spectrum of excited atomic emission (other light line spectrum) Xe*->Xe*,+h υ (light) In addition, the above mark Represents the meaning shown below.
Xe+ : Xe離子、Xe* :激發Xe原子、h :浦朗克常數、以 ) :振動數、e :電子 上述發光機構當中，（1)係Xe離子與電子再結合時 之從紫外波段至可見光波段之連續發光。係f-b躍遷發光 。（2)係電子因爲電漿中之電場之影響而減速時之赤外 波段之連續發光。係被稱爲制動輻射之f-f躍遷發光。（3 )係Xe之激發原子所導致之輝線光譜之發光。閃光放電 燈之發光係由以上之機構所構成。 此處，針對以增加紫外光爲目的之手段，本發明者注 意到f-b躍遷所導致之連續光譜之增加。其次，認爲提高 -6 - (4) 1296893 與紫外光發光相關之稀有氣體離子及電子之產生芦率及產 生數，應可增加f-b躍遷所導致之發光，故進行調查。結 果，發現若封入由混合著適度壓力範圍之Xe之Kr所構成 之混合稀有氣體，可以增加紫外光放射。本發明就是依據 此發現的結果。 本發明之主要目的，係在提供可增加紫外光放射之閃 光放電燈及利用其之光能量照射裝置，尤其是，提供可增 j 加波長200〜400nm之紫外光放射之閃光放電燈及利用其 之光能量照射裝置。 此外，本發明之其他目的，係在提供可增加電流密度 來進一步擴大紫外光放射之閃光放電燈及利用其之光能量 照射裝置。 本發明之閃光放電燈之特徵爲，具有：透光性細長氣 密容器；一對電極，封裝於氣密容器之兩端內部；以及放 電媒體，含有氪（Kr)及氙（Xe)，由氪對氪及氙之分配 ] 比P ( % )滿足下式之稀有氣體所構成，被封入至氣密容 器之內部而在閃光放電時可發光。 70^ 98 本發明係利用電離電勢較低之氙來產生電子，並促進 氪之離子化來實現紫外光之增加。亦即，Xe稀有氣體之 離子化電壓爲12.1eV、Kr稀有氣體之離子化電壓爲 14.0eV，故以適當壓力混合xe，可以促進Kr之離子化， -7 - (5) 1296893 而增加紫外光。 以稀有氣體之種類及紫外光發生量之關係而言，Xe、 Kr、以及Ar皆可得到波長200〜300nm之波段之發光。例 如，前述閃光放電燈利用同一電容器容量及放電電路以充 電電壓8kV實施亮燈時，若爲封入Kr之閃光放電燈，會 產生3 50〜400nm之波段之強連續發光。相對於此，若爲 封入Xe之閃光放電燈，則不會看到如前面所述的發光， ) 然而，卻可看到波長200〜3 00nm之波段之強輝線光譜。 此外，若爲封入氬之閃光放電燈，則會出現3 60nm附近相 對較高之輝線光譜。如上所示，上述各閃光放電燈當中， 若以產生波長200〜40 Onm範圍之紫外光而言，以封入Kr 之閃光放電燈可以得到最多之紫外光。以實例來進行說明 ，將Kr、Xe、以及 Ar分別以 40kPa之壓力封入內徑 1 Omm、長度340mm之氣密容器內，製作閃光放電燈，利 用電容器容量40μΡ、充電電壓1 lkV、電感ΟμΗ之放電電 ^ 路，以脈寬固定爲20μ8、峰値電流4000Α實施閃光放電 ，結果，波長300〜500nm之相對放射強度方面，若封入 Kr之閃光放電燈爲100%，則封入Ar之閃光放電燈爲89% 、封入Xe之閃光放電燈爲72%。 本發明因係在上述特定比率範圍內混合Kr及乂6，故 可利用Xe促進Kr之離子化而增加紫外光之發光，而且， 可有效獲得Kr所產生之3 50〜40Onm之波段之連續發光。 結果，波長200〜400nm之紫外光之光量大於封入100%之 Xe之傳統閃光放電燈、及封入100%之Kr之閃光放電燈 (6) 1296893 。Kr爲9 0%、Xe爲10%之分配比時，相對於封入100%之 Kr之閃光放電燈，可得到1 1 2%程度之紫外光。 然而，Kr之分配比P爲70%以下或98%以上，則波長 200〜400nm之紫外光發生量會等於或小於封入100%之Kr 之閃光放電燈，而無法獲得改良效果。此外，Kr之分配 比P之在於75〜95 %之範圍內。若爲此範圍內，可產生更 多量之紫外光。 :) 依據本發明之閃光放電燈，如上面所述，波長200〜 4 OOnm之紫外高頻放射會變多。因此，因爲紫外光容易被 被照射體表面所吸收而可對表面改質及表面加熱等表面處 理有效發揮作用，故最適合應用於例如半導體或液晶等之 表面處理。此外，因爲可增加紫外光，故對於表面殺菌處 理也十分有效。 其次，進行本發明之良好實施形態進行說明。本實施 形態除了本發明之上述閃光放電燈之構成以外，尙具有以 - 下之特徵，亦即，閃光亮燈時，垂直於氣密容器管軸之剖 面之電流密度爲8000A/cm2以上。 本實施形態時，除了利用封入上述混合稀有氣體而可 利用f-b躍遷提高發光效率以外，尙可增加燈電流値來實 現高電流密度化進行增加離子數及電子數，故可提高f-b 躍遷所導致之發光效率。結果，可使紫外光之發生量進一 步增多。相對於此，相對於電流密度之增加，可見光波段 之發光幾乎沒有變化。此外，相對於電流密度之增加，紅 外光呈現減少。換言之，紫外光隨著電流密度之增加而增 -9 - (7) 1296893 加，而紅外光則相對減少。 紫外光與電流密度呈現正向相關，電流密度爲 8 000 A/cm2以上時，紫外光顯著增加，而可得到期望之値 之紫外光量。相對於此，電流密度爲8000A/cm2以下時， 紫外光之增加程度較小，而無法得到期望量之紫外光量。 此外，電流密度應爲1 0000 A/cm2以上，上述範圍時，紫 外光之增加特別顯著。 然而，電流密度係針對垂直形成於氣密容器內之放電 空間之管軸之剖面來求取，爲將燈電流除以主要發光波段 之上述剖面積所得到之値。 其次，針對本發明之光能量照射裝置進行說明。光能 量照射裝置之特徵爲，具有：光能量照射裝置本體、配設 於光能量照射裝置本體之申請專利範圍第1或2項之閃光 放電燈、以及用以使閃光放電燈實施閃光亮燈之閃光放電 燈亮燈裝置。 本發明之光能量照射裝置因爲具有以上之構成，閃光 放電燈實施閃光放電時，產生之閃光發光會照射於被照射 物，然而，因爲閃光放電燈放射之紫外光較多，故可有效 地實施例如被照射物之表面處理及殺菌處理等。 依據申請專利範圍第1項之發明，因爲相對於氪以特 定壓力比範圍混合封入氙，故可提供波長200〜4 OOnm之 紫外光增多之閃光放電燈。 依據申請專利範圍第2項之發明，進一步使電流密度 在於特定範圍內，故可提供波長200〜400nm之紫外光進 -10- (8) 1296893 一步增多之閃光放電燈。 依據申請專利範圍第3項之發明，可提供具有申 利範圍第1及2項之效果之光能量照射裝置。 【實施方式】 以下，參照圖面，針對本發明之實施形態進行說 第1圖及第2圖係本發明之閃光放電燈之第1實 J 態，第1圖係閃光放電燈之正面圖，第2圖係除去觸 極之狀態之放大剖面圖。 本實施形態時，閃光放電燈HFL具有氣密容器 一對電極E、E、以及放電媒體。此外，可依需要而 觸發電極TW。 〔氣密容器SE〕 氣密容器SE具有透光性，而 呈現細長狀，內部爲中空。此處之透光性係指可透射 導引至外部並進行利用之期望波長之波段，只要可實 :) 射期望波長之紫外光即可，換言之，對真空紫外光具 質透射性。此外，只有氣密容器SE之主要部份具有 性亦可。 此外，氣密容器SE係沿著管軸方向延伸之細長 ，內部之中空部份係當做放電空間1 b來利用。氣密 SE之長度可對應被照射體之大小而設定成期望之値 如，可以爲具有長度爲0.4〜2m程度之氣密容器SE 光放電燈HFL。此外，氣密容器SE之外徑D ( mm) 於6SDS30之範圍內。上述數式中之外徑D(mm) 請專 明。 施形 發電 SE、 具有 且， 打算 質透 有實 透光 形狀 容器 〇例 之閃 應在 ，係 -11 - (9) 1296893 將管軸方向之後述主要部份之圓周平均値之大小換算成圓 周相等之圓形時的値。 ( 此外，氣密容器S E之構成上，可依據期望，在中空 部之管軸方向上可以具有內部剖面積爲某値之第1區域、 及內部剖面積爲不同於上述某値之値之第2區域，而且， 該區域之剖面積比滿足特定關係。內部剖面積之變化可以 爲階段性或連續性。內部剖面積之變化可依以下例示之目 ]) 的來適度進行設定。此外，無論目的爲何，皆具有以下之 關係，亦即，若某區域之內部剖面積相對較小，則流過該 區域之電流密度會變大，同時，發光之強度也會相對地變 大，相反的，若內部剖面積相對較大，則流過該區域之電 流密度會變小，同時，發光之強度也會相對變小。 1、 在相對較長距離可得到沿著管軸方向之均一光照 射效果。 2、 在管軸方向之中間部形成發光相對較強之區域。 J 3、在管軸方向之兩端部形成發光相對較強之區域。 此外，氣密容器SE之構成上，可以具有用以使其內 部與大氣形成氣密且用以封裝並支持後述之電極E、E之 細長管1及兩端之密封部2。此外，第1圖中，符號1 a係 配設於管1之側面之排氣通知部。密封部2可採用適當之 構成，然而，因爲在閃光放電時會瞬間流過數千A之大電 流，故必須採用能夠承受之密封構造。最好採用過渡封接 構造。 〔一對電極E、E〕 一對電極E、E被以相對方式封 -12· ③ (10) 1296893 裝於氣密容器SE之兩端內部。其次，可以使用傳統上使 用於閃光放電燈之構成之冷陰極型電極。此時，可以使用 由例如鎳（Ni )、鎢（W )、鉬（Mo )、鉅（Ta )、以及 鈦（ Ti)之群組所選擇之一種或複數種之耐火性金屬、或 由複數種所構成之合金、或不銹鋼等來形成電極。 此外，電極E之構成如圖所示，含有電極主部3 a及 電極軸3 b，電極主部3 a獲得電極軸3 b前端之支持。氣密 ::) 容器SE之密封部2以氣密方式對電極軸3b之基端進行密 封。此外，過渡封接構造時，可將外部導線LW兼做爲電 極軸3b使用，因此，可使外部導線LW貫穿氣密容器SE 之密封部2並突入氣密容器SE之內部，並利用其前端支 持電極主部3 a。 此外，可依據期望，以陶瓷覆蓋電極軸3b。藉此，可 以抑制因爲閃光放電燈HFL之亮燈而從被加熱至高溫之電 極軸3b所產生之碳（C)等雜質被釋放至氣密容器SE之 1 內部，而避免因爲氣密容器SE內面之黑化而縮短閃光放 電燈HFL之壽命。此外，形成適度大小之上述陶瓷，尙具 有可使電極E保持於特定位置之電極保持構件之作用。此 外，亦可依據期望，使除氣膜附著於上述陶瓷。 〔放電媒體〕放電媒體係利用放電來放射期望波段 之光之媒體，係以將氪（Kr )及氙（Xe )以特定比例進行 混合之稀有氣體爲主體。在氪對氪及氙之混合比率（Kr/ (Kr + Xe))爲P ( %)時，特定比例必須滿足數式70S P S98。此外，上述混合稀有氣體之封入壓係與傳統上一般 -13- (11) 1296893 使用於閃光放電燈相同之壓力範圍，例如50〜20 OkP a程 度。 〔觸發電極TW〕 可依據期望而具有觸發電極TW。 其次，以緊貼於氣密容器SE之外面之方式配設，並利用 與至少其中之一方電極E之間形成強烈電位梯度，可對氣 密容器SE內之內部進行絕緣破壞，進而發揮以使一對電 極E、E間產生放電之機能。 此外，觸發電極TW之配設上，係以緊貼著氣密容器 SE之外面、間距p(mm)爲滿足數式5^Ρ^50之螺旋狀 之方式來實施。間距P若在於上述之範圍內，氣密容器 SE之管長在2m程度以下之範圍時，閃光放電之電弧中心 大致爲沿著管軸之直線狀，而且，可以安定地形成，而有 利於將期望程度之放電所產生之光能量導引至外部。此外 ’觸發電極TW之間距可依據氣密容器SE之管長而在適 當之範圍進行變化，只要在上述範圍內，可以對應管長來 選擇最佳條件。例如，管長爲3 00〜2000mm程度，而且 ，外徑D(mm)爲6gDS30之範圍內時，觸發電極TW 之間距以2 0〜3 0 m m爲佳。此外，上述數式中之外徑D ( mm ) ’係將管軸方向之後述主要部份之圓周平均値之大 小換算成圓周相等之圓形時的値。間距p爲5 m m以下時 ，電弧之安定性雖然沒有問題，然而，遮蔽率會過大而不 適用。此外，間距P若超過3 0mm，遮蔽率雖然沒有問題 ’然而，電弧之安定性會變差而更不適用。 此外’觸發電極TW除了滿足上述條件以外，其線徑 -14- (12) 1296893 d ( mm )若能在〇 · 1 ‘ d S 2 · 0之範圍內，亮燈時之熱膨脹 所造成的影響甚小，而且，遮蔽率也不會過大。相對於此 ，線徑爲〇·1 mm以下時，亮燈時之熱膨脹會變大而容易在 與氣密容器之間形成間隙，而且，觸發電極TW之間距不 易維持固定。觸發電極TW及氣密容器s E之間之間隙變 大，而使起動性受損。此外，間距無法維持固定，則會使 電弧之安定性受損。此外，線徑若超過2 · Omm，遮蔽率會 'J 變大，被導引至外部之管軸方向之光能量分布之均一度會 變差。此外，觸發電極TW只要沿著電弧之管軸呈現安定 之配置的話，不一定爲如上面所述之螺旋狀捲繞，亦可以 爲例如沿著管軸之直線狀等之構成。 此外’爲了使觸發電極TW及一方電極E之間形成強 烈電位梯度，例如，可以在觸發電極TW及該一方電極E 之間連結後述之高電壓產生電路HVC、或將觸發電極TW 連結至另一方電極E。此外，調整觸發電極TW之電極E ； 、E間之長度，可以將一對電極E、E間之放電開始電壓 控制於期望値。 此外，爲了以使觸發電極TW接觸氣密容器SE之外 面之狀態固定於特定位置，可以如第1圖所示，最好以金 屬製環狀構件4緊縛觸發電極TW之兩端。此時，其構成 上，導線5從金屬製之環狀構件4穿過。採用此種構成， 即使導線承受到非期望之張力，亦可維持觸發電極TW之 間距。 此外，可依據期望在電極E附近配設除氣膜G。除氣 -15- (14) 1296893 分光分布曲線圖，第3圖係實施例，第4圖係比較例1， 第5圖係比較例2。各圖中，橫軸爲波長（nm )，縱軸爲 相對放射強度。 由第3圖至第5圖之對比可以得知，實施例時，波長 200〜400nm之紫外線，尤其是，波長3 00〜400nm之區域 之放射量明顯多於比較例1、2。此外，實施例及比較例1 、2之充電電壓値雖然並不一致，然而，也沒有太大的差 .) 異，分光分布沒有大幅度的變化。 第6圖係紫外光放射強度相於混合稀有氣體中之Kr 分配比變化之關係圖。圖中，橫軸爲Kr分配比（Kr/ ( Kr + Xe))，縱軸爲％UV。此外，％UV係相對於波長200 〜9 5 Oiim之全放射之相對紫外光放射強度（％ )。供測定 之閃光放電燈除了 Kr分配比以外之規格與實施例相同。 由圖可以得知，Kr分配比爲70〜9 8%時，紫外光明顯 多於Kr爲100%時。此外，爲75〜95%時，紫外光明顯增 多。此外，Kr分配比爲90%時，紫外光增加最多。 第7圖係紫外光放射量相對於閃光放電燈之燈電流密 度之變化之關係圖。圖中，橫軸爲燈電流密度A/cm2、縱 軸爲％UV。此外，％UV及閃光放電燈與第6圖相同。 由第7圖可以得知，燈電流密度爲8000 ( A/cm2)以 上時、尤其是10000 (A/cm2)以上時，紫外光、尤其是 波長3 00〜4 00 nm之區域之紫外光量增多，燈電流密度爲 8000 ( A/cm2)以下時，紫外光量明顯減少。 第8圖係紫外光、可見光、以及紅外光之各放射量對 -17- (15) 1296893 閃光放電燈之燈電流密度之變化之關係圖。圖中’橫軸爲 燈電流密度A/cm2，縱軸爲放射強度（°/〇 )。 由圖可以得知，燈電流密度增加時，如前面所述，紫 外光會增加，然而，紅外光會減少。相對於此，可見光幾 乎沒有變化。此外，第7圖及第8圖之燈電流密度範圍並 不一致，然而，由第8圖所示之傾向，可以推測燈電流密 度進一步增大時也會呈現相同傾向。 ::) 第9圖及第10圖係本發明之光能量照射裝置之一實 施形態，第9圖係槪念剖面圖，第1 0圖係電路方塊圖。 本實施形態之光能量照射裝置具有：光能量照射裝置本體 LE、配設於光能量照射裝置本體LE之閃光放電燈HFL、 以及用以使閃光放電燈HFL實施閃光亮燈之閃光放電燈亮 燈裝置FOD，用以對被照射體SM照射閃光能量。 光能量照射裝置本體LE係指光能量照射裝置、閃光 放電燈HFL、以及閃光放電燈亮燈裝置FOD以外之其他 ^ 部份，其具體構造沒有特別限制。光能量照射裝置本體 LE之一實例就是具有反射鏡Μ及濾光鏡F。反射鏡Μ係 將閃光放電燈HFL放射之閃光能量朝被照射體SM反射。 濾光鏡F係由具有紫外線透射性之例如含有8 0質量％以上 之氧化矽之石英玻璃所構成，用以防止來自被照射體SM 等之污染物質飛散至閃光放電燈HFL。 閃光放電燈HFL具有如第1圖及第2圖所示之第1實 施形態之構造，而且，具有實施例之規格。 閃光放電燈亮燈裝置FOD具有第10圖所示之電路構 -18- (16) 1296893 成。亦即，閃光放電燈亮燈裝置FOD具有閃光亮燈電路 〇C及高電壓產生電路HVG。 閃光亮燈電路0C之構成上，係以充放電電容器C1及 充電電路CC爲主體。此外，充放電電容器C1之構成如圖 所示，係倂聯之複數電容器。此外，實施例之亮燈條件時 ，充放電電容器C1之靜電容量爲4 0 μΡ、充電電壓爲12k V 、燈電流之峰値爲電流密度12760 ( A/cm2 )、半値寬度 」 爲2 0 μ s。 高電壓產生電路HVG之構成上，含有脈波變壓器， 省略圖示之脈波電源所輸出之脈波電壓輸入至脈波變壓器 之主線圏，並從副線圏輸出高電壓脈波並施加於一方電極 Ε及觸發電極TW之間。 被照射體SM係例如實施表面處理之物體，可以爲任 何物體。此外，與光能量照射之目的無關。 其次，啓動光能量照射裝置來實施閃光放電燈HFL之 ] 亮燈時，以紫外線及可見光爲主體之光能量照射所產生之 放射能量會在瞬間且集中地施加於被照射體SM之被照射 處理面。藉此，可對被照射體S實施例如表面處理之期望 之光照射處理。 【圖式簡單說明】 第1圖係本發明之閃光放電燈之一實施形態之正面圖 〇 第2圖係本發明之閃光放電燈之一實施形態之觸發電 -19- (17) 1296893 極除外之狀態之放大剖面圖。 第3圖係本發明之閃光放電燈之實施例之分光分布曲 線圖。 第4圖係比較例1之分光分布曲線圖。 第5圖係比較例2之分光分布曲線圖。 第6圖係紫外光放射強度對混合稀有氣體中之Kr分 配比之變化之關係圖。 第7圖係閃光放電燈之亮燈中之燈電流密度及紫外光 放射量之關係圖。 第8圖係紫外光、可見光、以及紅外光之各放射量對 閃光放電燈之燈電流密度之變化之關係圖。 第9圖係本發明之光能量照射裝置之一實施形態之槪 念剖面圖。 第1 0圖係本發明之一實施形態之閃光放電燈亮燈裝 置之電路方塊圖。 第1 1圖係傳統上封入氙之閃光放電燈之分光分布曲 線圖。 【主要元件符號說明】 E :電極 HFL :閃光放電燈 LW :外部導線 SE :氣密容器 TW :觸發電極Xe+ : Xe ion, Xe*: excited Xe atom, h: Planck constant, by: vibration number, e: electron. Among the above-mentioned illuminating mechanisms, (1) Xe ion and electron recombination from ultraviolet to visible light Continuous illumination of the band. The f-b transition glows. (2) Continuous illumination of the infrared band when the electrons are decelerated due to the influence of the electric field in the plasma. It is called the f-f transition luminescence of brake radiation. (3) The luminescence of the spectrum of the glow caused by the excited atoms of Xe. The flashing light is composed of the above mechanisms. Here, the inventors have noted an increase in the continuous spectrum caused by the f-b transition for the purpose of increasing ultraviolet light. Secondly, it is considered that the increase of -6 - (4) 1296893 and the generation of rare gas ions and electrons associated with ultraviolet light emission and the number of generations should increase the luminescence caused by the f-b transition, so the investigation was conducted. As a result, it was found that ultraviolet light emission can be increased by enclosing a mixed rare gas composed of Kr mixed with a moderate pressure range of Xe. The present invention is based on the results of this discovery. The main object of the present invention is to provide a flash discharge lamp capable of increasing ultraviolet radiation and a light energy irradiation device using the same, and in particular to provide a flash discharge lamp capable of increasing ultraviolet radiation with a wavelength of 200 to 400 nm and utilizing the same Light energy irradiation device. Further, another object of the present invention is to provide a flash discharge lamp which can increase the current density to further expand ultraviolet light emission and a light energy irradiation device using the same. The flash discharge lamp of the present invention is characterized in that: a light transmissive elongated airtight container; a pair of electrodes encapsulated inside the two ends of the airtight container; and a discharge medium containing krypton (Kr) and xenon (Xe),氪 氪 氪 and 氙 distribution] It is composed of a rare gas that satisfies P (%) and is enclosed in an airtight container to emit light during flash discharge. 70^98 The present invention utilizes a lower ionization potential to generate electrons and promotes ionization of germanium to achieve an increase in ultraviolet light. That is, the ionization voltage of the Xe rare gas is 12.1 eV, and the ionization voltage of the Kr rare gas is 14.0 eV, so that mixing xe at an appropriate pressure can promote the ionization of Kr, and increase the ultraviolet light by -7 - (5) 1296893. . Xe, Kr, and Ar can emit light in a wavelength band of 200 to 300 nm in terms of the kind of rare gas and the amount of ultraviolet light generated. For example, when the flash discharge lamp is turned on with the same capacitor capacity and discharge circuit at a charging voltage of 8 kV, if it is a flash discharge lamp in which Kr is enclosed, strong continuous light emission in a wavelength band of 3 50 to 400 nm is generated. On the other hand, in the case of the flash discharge lamp in which Xe is enclosed, the light emission as described above is not observed, but the strong-light spectrum of the wavelength band of 200 to 300 nm can be seen. In addition, in the case of a flash discharge lamp in which argon is enclosed, a relatively high luminance spectrum near 3 60 nm appears. As described above, among the above-mentioned respective flash discharge lamps, the ultraviolet light having a wavelength of 200 to 40 Onm can be used to obtain the most ultraviolet light by the flash discharge lamp in which Kr is enclosed. By way of example, Kr, Xe, and Ar were sealed in an airtight container having an inner diameter of 1 Omm and a length of 340 mm at a pressure of 40 kPa to prepare a flash discharge lamp having a capacitor capacity of 40 μm, a charging voltage of 1 lkV, and an inductance of ArμΗ. The discharge electric circuit is subjected to flash discharge with a pulse width of 20 μ8 and a peak 値 current of 4000 ,. As a result, in terms of the relative radiation intensity of the wavelength of 300 to 500 nm, if the flash discharge lamp enclosing the Kr is 100%, the flash discharge lamp of Ar is sealed. For 89%, the flash discharge lamp enclosed in Xe is 72%. In the present invention, since Kr and 乂6 are mixed in the above specific ratio range, Xe can be used to promote the ionization of Kr to increase the luminescence of ultraviolet light, and the continuous luminescence of the wavelength range of 3 50 to 40 nm generated by Kr can be effectively obtained. . As a result, the amount of ultraviolet light having a wavelength of 200 to 400 nm is larger than that of a conventional flash discharge lamp enclosing 100% of Xe, and a flash discharge lamp (6) 1296893 enclosing 100% of Kr. When Kr is 90% and Xe is 10%, the ultraviolet light of about 12% can be obtained with respect to the flash discharge lamp in which 100% of Kr is enclosed. However, if the distribution ratio of Kr is 70% or less or 98% or more, the amount of ultraviolet light having a wavelength of 200 to 400 nm may be equal to or less than that of a flash discharge lamp enclosing 100% of Kr, and an improved effect cannot be obtained. In addition, the distribution ratio of Kr is in the range of 75 to 95%. If it is within this range, more UV light can be produced. :) According to the flash discharge lamp of the present invention, as described above, ultraviolet high-frequency radiation having a wavelength of 200 to 400 nm is increased. Therefore, since ultraviolet light is easily absorbed by the surface of the irradiated body and can effectively function for surface treatment such as surface modification and surface heating, it is most suitably applied to surface treatment such as semiconductor or liquid crystal. In addition, since the ultraviolet light can be increased, it is also very effective for surface sterilization treatment. Next, a description will be given of a preferred embodiment of the present invention. In addition to the above-described configuration of the above-described flash discharge lamp of the present invention, the crucible has a feature that the current density perpendicular to the cross section of the tube axis of the hermetic container is 8000 A/cm 2 or more. In the present embodiment, in addition to the use of the mixed rare gas, the fb transition can be used to improve the luminous efficiency, and the lamp current can be increased to increase the current density and increase the number of ions and the number of electrons. Therefore, the fb transition can be improved. Luminous efficiency. As a result, the amount of ultraviolet light can be further increased. On the other hand, the light emission in the visible light band hardly changes with respect to the increase in the current density. In addition, the infrared light is reduced relative to the increase in current density. In other words, the ultraviolet light increases with the increase of the current density -9 - (7) 1296893 plus, while the infrared light is relatively reduced. The ultraviolet light is positively correlated with the current density. When the current density is above 8 000 A/cm2, the ultraviolet light is significantly increased, and the desired amount of ultraviolet light can be obtained. On the other hand, when the current density is 8000 A/cm 2 or less, the degree of increase in ultraviolet light is small, and the desired amount of ultraviolet light cannot be obtained. Further, the current density should be 1 0000 A/cm2 or more, and the increase in ultraviolet light is particularly remarkable in the above range. However, the current density is obtained for the cross section of the tube axis of the discharge space formed vertically in the hermetic container, which is obtained by dividing the lamp current by the above-mentioned sectional area of the main light-emitting band. Next, the light energy irradiation device of the present invention will be described. The light energy illuminating device is characterized in that: the light energy illuminating device body, the flash discharge lamp of claim 1 or 2, which is disposed on the body of the light energy illuminating device, and the flashing lamp for implementing the flash discharge lamp Flash discharge lamp lighting device. Since the light energy irradiation device of the present invention has the above configuration, when the flash discharge lamp is subjected to flash discharge, the flash light generated by the flash discharge lamp is irradiated onto the object to be irradiated. However, since the flash discharge lamp emits more ultraviolet light, it can be effectively implemented. For example, surface treatment and sterilization treatment of the object to be irradiated. According to the invention of claim 1, the flash discharge lamp having an increased ultraviolet light having a wavelength of 200 to 400 nm can be provided because the crucible is mixed and sealed in a specific pressure ratio range with respect to the crucible. According to the invention of claim 2, the current density is further within a specific range, so that ultraviolet light having a wavelength of 200 to 400 nm can be supplied. -10- (8) 1296893 A step-by-step flash discharge lamp. According to the invention of claim 3, a light energy irradiation device having the effects of the first and second aspects of the application can be provided. [Embodiment] Hereinafter, the first embodiment and the second embodiment of the present invention are referred to as a first embodiment of the flash discharge lamp of the present invention, and the first diagram is a front view of a flash discharge lamp. Fig. 2 is an enlarged cross-sectional view showing the state in which the electrodes are removed. In the present embodiment, the flash discharge lamp HFL has a pair of electrodes E and E of an airtight container, and a discharge medium. In addition, the electrode TW can be triggered as needed. [Airtight container SE] The airtight container SE has a light transmissive property and is elongated and has a hollow interior. The light transmissivity herein refers to a wavelength band of a desired wavelength which can be transmitted to the outside and utilized, as long as it can: emit ultraviolet light of a desired wavelength, in other words, transparency to vacuum ultraviolet light. In addition, only the main part of the hermetic container SE is sexually acceptable. Further, the hermetic container SE is elongated along the tube axis direction, and the inner hollow portion is utilized as the discharge space 1 b. The length of the airtight SE can be set to a desired size in accordance with the size of the object to be irradiated. For example, it can be an airtight container SE discharge lamp HFL having a length of about 0.4 to 2 m. Further, the outer diameter D (mm) of the hermetic container SE is in the range of 6SDS30. The outer diameter D (mm) in the above formula should be specified. The shape of the power generation SE, with and in the form of a container with a transparent light-transmissive shape, is -11 - (9) 1296893. The size of the circumferential mean 値 of the main part of the tube axis is converted into a circle.値 when the circle is equal. (In addition, in the configuration of the airtight container SE, the first region having a certain internal cross-sectional area and the internal cross-sectional area may be different from the above-mentioned one in the tube axis direction of the hollow portion as desired. 2 area, and the sectional area ratio of the area satisfies a specific relationship. The change of the internal sectional area may be phased or continuous. The change of the internal sectional area may be appropriately set according to the following example]). In addition, regardless of the purpose, the relationship has the following relationship, that is, if the internal cross-sectional area of a certain area is relatively small, the current density flowing through the area becomes large, and the intensity of the illuminating light becomes relatively large. Conversely, if the internal cross-sectional area is relatively large, the current density flowing through the area becomes smaller, and the intensity of the illuminating light becomes relatively small. 1. A uniform illumination effect along the tube axis can be obtained at a relatively long distance. 2. A region where the light emission is relatively strong is formed in the middle portion of the tube axis direction. J 3. A region where light emission is relatively strong is formed at both end portions in the tube axis direction. Further, the hermetic container SE may have a sealing portion 2 for forming the inner tube and the atmosphere to be airtight and for enclosing and supporting the elongated tubes 1 and both ends of the electrodes E and E to be described later. Further, in Fig. 1, reference numeral 1a is an exhaust notification portion provided on the side of the tube 1. The sealing portion 2 can be suitably constructed. However, since a large current of several thousand A flows instantaneously during flash discharge, it is necessary to adopt a sealing structure that can withstand. It is best to use a transition seal construction. [A pair of electrodes E, E] A pair of electrodes E, E are sealed in opposite directions by -12·3 (10) 1296893 inside the both ends of the hermetic container SE. Next, a cold cathode type electrode conventionally used for the construction of a flash discharge lamp can be used. At this time, one or a plurality of fire-resistant metals selected from the group of, for example, nickel (Ni), tungsten (W), molybdenum (Mo), giant (Ta), and titanium (Ti) may be used, or An alloy or a stainless steel or the like is used to form an electrode. Further, as shown in the figure, the electrode E has a main electrode portion 3a and an electrode shaft 3b, and the electrode main portion 3a is supported by the tip end of the electrode shaft 3b. Airtight ::) The sealing portion 2 of the container SE seals the base end of the electrode shaft 3b in a gastight manner. Further, in the transition sealing structure, the external lead wire LW can also be used as the electrode shaft 3b, so that the external lead wire LW can pass through the sealing portion 2 of the airtight container SE and protrude into the inside of the airtight container SE, and the front end thereof can be utilized. The electrode main portion 3 a is supported. Further, the electrode shaft 3b may be covered with ceramic as desired. Thereby, it is possible to suppress impurities such as carbon (C) generated from the electrode shaft 3b heated to a high temperature due to the lighting of the flash discharge lamp HFL from being released to the inside of the airtight container SE, and avoiding the airtight container SE The blackening of the inner surface shortens the life of the flash discharge lamp HFL. Further, the above-mentioned ceramic of a moderate size is formed, and the crucible has an action of an electrode holding member which can hold the electrode E at a specific position. Further, the degassing film may be attached to the ceramic as desired. [Discharge medium] A discharge medium is a medium in which a light of a desired wavelength band is emitted by discharge, and a rare gas in which krypton (Kr) and xenon (Xe) are mixed at a specific ratio is mainly used. When the mixing ratio (Kr/(Kr + Xe)) of 氪 and 氙 is P (%), the specific ratio must satisfy the formula 70S P S98. Further, the above-mentioned mixed rare gas encapsulation pressure system is conventionally used in the same pressure range as that of the flash discharge lamp, for example, 50 to 20 OkPa. [Trigger electrode TW] The trigger electrode TW can be provided as desired. Next, it is disposed in close contact with the outer surface of the hermetic container SE, and a strong potential gradient is formed between at least one of the square electrodes E to insulate and destroy the inside of the hermetic container SE, thereby The discharge function between the pair of electrodes E and E is generated. Further, the arrangement of the trigger electrode TW is performed so as to be close to the outer surface of the airtight container SE and the pitch p (mm) is a spiral shape satisfying the formula 5^Ρ^50. When the pitch P is within the above range and the tube length of the hermetic container SE is in the range of about 2 m or less, the arc center of the flash discharge is substantially linear along the tube axis, and can be stably formed, which is advantageous for the desired The light energy generated by the degree of discharge is directed to the outside. Further, the distance between the trigger electrodes TW can be varied within an appropriate range depending on the length of the tube of the hermetic container SE, and as long as it is within the above range, the optimum condition can be selected in accordance with the length of the tube. For example, when the tube length is about 300 to 2000 mm, and the outer diameter D (mm) is in the range of 6 g DS30, the distance between the trigger electrodes TW is preferably 20 to 30 mm. Further, the outer diameter D (mm)' in the above formula is a factor obtained by converting the mean value of the circumferential mean 之后 of the main portion described later in the tube axis direction into a circle having a circular circumference. When the pitch p is 5 m or less, although the stability of the arc is not problematic, the shielding rate is too large to be applied. Further, if the pitch P exceeds 30 mm, there is no problem in the shielding rate. However, the stability of the arc is deteriorated and it is less suitable. In addition, the 'trigger electrode TW', in addition to the above conditions, its wire diameter -14 - (12) 1296893 d (mm) can be in the range of 〇 · 1 ' d S 2 · 0, the effect of thermal expansion when lighting Very small, and the shielding rate will not be too large. On the other hand, when the wire diameter is 〇·1 mm or less, the thermal expansion at the time of lighting becomes large, and it is easy to form a gap with the airtight container, and the distance between the trigger electrodes TW is not easily maintained. The gap between the trigger electrode TW and the hermetic container s E becomes large, and the startability is impaired. In addition, the spacing cannot be maintained constant, which can impair the stability of the arc. In addition, if the wire diameter exceeds 2 · Omm, the shielding rate becomes larger, and the uniformity of the light energy distribution guided to the outer tube axis direction is deteriorated. Further, the trigger electrode TW is not necessarily spirally wound as described above as long as it is placed in a stable manner along the tube axis of the arc, and may be formed, for example, in a straight line along the tube axis. Further, in order to form a strong potential gradient between the trigger electrode TW and the one electrode E, for example, a high voltage generating circuit HVC to be described later or a trigger electrode TW may be connected between the trigger electrode TW and the one electrode E. Electrode E. Further, by adjusting the length between the electrodes E and E of the trigger electrode TW, the discharge start voltage between the pair of electrodes E and E can be controlled to the desired 値. Further, in order to fix the trigger electrode TW to a specific position in contact with the outer surface of the airtight container SE, as shown in Fig. 1, it is preferable to restrain the both ends of the trigger electrode TW with the metal ring member 4. At this time, in the constitution, the wire 5 is passed through the metal ring member 4. With this configuration, even if the wire is subjected to an undesired tension, the pitch of the trigger electrode TW can be maintained. Further, the degassing film G may be disposed in the vicinity of the electrode E as desired. Degassing -15-(14) 1296893 Spectral distribution curve, Fig. 3 is an example, Fig. 4 is a comparative example 1, and Fig. 5 is a comparative example 2. In each of the figures, the horizontal axis represents the wavelength (nm), and the vertical axis represents the relative radiation intensity. As can be seen from the comparison of Fig. 3 to Fig. 5, in the examples, the ultraviolet rays having a wavelength of 200 to 400 nm, in particular, the regions having a wavelength of from 00 to 400 nm were significantly more than those of Comparative Examples 1 and 2. Further, although the charging voltages of the examples and the comparative examples 1 and 2 were not uniform, there was no significant difference, and the spectral distribution did not largely change. Fig. 6 is a graph showing the relationship between the ultraviolet radiation intensity phase and the Kr distribution ratio in the mixed rare gas. In the figure, the horizontal axis represents the Kr distribution ratio (Kr/(Kr + Xe)), and the vertical axis represents %UV. Further, the %UV is relative to the ultraviolet radiation intensity (%) of the total radiation of the wavelength of 200 to 9 5 Oiim. The flash discharge lamp to be measured has the same specifications as the embodiment except for the Kr distribution ratio. It can be seen from the figure that when the Kr distribution ratio is 70 to 9 8%, the ultraviolet light is significantly more than the Kr is 100%. In addition, when it is 75 to 95%, the ultraviolet light is remarkably increased. In addition, when the Kr distribution ratio is 90%, the ultraviolet light increases most. Fig. 7 is a graph showing the relationship between the amount of ultraviolet light emitted relative to the lamp current density of the flash discharge lamp. In the figure, the horizontal axis is the lamp current density A/cm2 and the vertical axis is %UV. In addition, the %UV and flash discharge lamps are the same as in Fig. 6. It can be seen from Fig. 7 that when the lamp current density is 8000 (A/cm2) or more, especially 10000 (A/cm2) or more, the amount of ultraviolet light, especially in the region of 300 to 400 nm, increases. When the lamp current density is below 8000 (A/cm2), the amount of ultraviolet light is significantly reduced. Fig. 8 is a graph showing the relationship between the amount of ultraviolet light, visible light, and infrared light emitted by the lamp current density of the -17-(15) 1296893 flash discharge lamp. In the figure, the horizontal axis represents the lamp current density A/cm2, and the vertical axis represents the radiation intensity (°/〇). As can be seen from the figure, when the lamp current density is increased, as described above, the ultraviolet light is increased, however, the infrared light is reduced. In contrast, visible light has hardly changed. Further, the lamp current density ranges in Figs. 7 and 8 do not match each other. However, from the tendency shown in Fig. 8, it can be inferred that the lamp current density is further increased. ::) Fig. 9 and Fig. 10 show an embodiment of the light energy irradiation device of the present invention, and Fig. 9 is a cross-sectional view of the commemorative view, and Fig. 10 is a block diagram of the circuit. The light energy irradiation device of the present embodiment includes a light energy irradiation device main body LE, a flash discharge lamp HFL disposed in the light energy irradiation device body LE, and a flash discharge lamp for causing the flash discharge lamp HFL to perform flashing lighting. The device FOD is for irradiating the irradiated body SM with flash energy. The light energy irradiation device body LE refers to a portion other than the light energy irradiation device, the flash discharge lamp HFL, and the flash discharge lamp lighting device FOD, and the specific configuration thereof is not particularly limited. An example of the light energy illuminating device body LE is to have a mirror Μ and a filter F. The mirror Μ system reflects the flash energy radiated from the flash discharge lamp HFL toward the irradiated body SM. The filter F is made of quartz glass containing, for example, 80% by mass or more of cerium oxide having ultraviolet light transmittance, and is used to prevent scattering of pollutants from the irradiated body SM or the like to the flash discharge lamp HFL. The flash discharge lamp HFL has the structure of the first embodiment shown in Figs. 1 and 2, and has the specifications of the embodiment. The flash discharge lamp lighting device FOD has the circuit configuration shown in Fig. 10 -18-(16) 1296893. That is, the flash discharge lamp lighting device FOD has a flash lighting circuit 〇C and a high voltage generating circuit HVG. In the configuration of the flash lighting circuit 0C, the charging and discharging capacitor C1 and the charging circuit CC are mainly used. Further, the configuration of the charge and discharge capacitor C1 is as shown in the figure, and is a plurality of capacitors connected in series. Further, in the lighting condition of the embodiment, the charge capacity of the charge and discharge capacitor C1 is 40 μΡ, the charge voltage is 12 k V , the peak value of the lamp current is the current density of 12760 (A/cm 2 ), and the half turn width is 20 μm. s. The high voltage generating circuit HVG includes a pulse transformer, and a pulse wave voltage output from a pulse wave power source (not shown) is input to a main line 脉 of the pulse transformer, and a high voltage pulse wave is output from the sub line 并 and applied to one side. Between the electrode Ε and the trigger electrode TW. The object to be irradiated SM is, for example, an object subjected to surface treatment, and may be any object. In addition, it has nothing to do with the purpose of light energy irradiation. Next, when the light energy irradiation device is activated to perform the lighting of the flash discharge lamp HFL, the radiation energy generated by the irradiation of the light energy mainly composed of ultraviolet rays and visible light is applied to the irradiated body SM in an instantaneous and concentrated manner. surface. Thereby, a desired light irradiation treatment such as surface treatment can be performed on the irradiated body S. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a front view showing an embodiment of a flash discharge lamp of the present invention. Fig. 2 is a triggering circuit of one embodiment of the flash discharge lamp of the present invention. -19- (17) Except 1296893 An enlarged cross-sectional view of the state. Fig. 3 is a sectional light distribution diagram of an embodiment of the flash discharge lamp of the present invention. Fig. 4 is a graph showing the spectral distribution of Comparative Example 1. Fig. 5 is a graph showing the spectral distribution of Comparative Example 2. Fig. 6 is a graph showing the relationship between the ultraviolet radiation intensity and the Kr distribution ratio in the mixed rare gas. Figure 7 is a graph showing the relationship between the current density of the lamp and the amount of ultraviolet radiation in the lighting of the flash discharge lamp. Figure 8 is a graph showing the relationship between the amount of ultraviolet light, visible light, and infrared light emitted by the lamp current density of the flash discharge lamp. Fig. 9 is a cross-sectional view showing an embodiment of the light energy irradiation device of the present invention. Fig. 10 is a circuit block diagram showing a flash discharge lamp lighting device according to an embodiment of the present invention. Fig. 1 is a spectroscopic distribution diagram of a flash discharge lamp conventionally enclosed in a crucible. [Main component symbol description] E : Electrode HFL : Flash discharge lamp LW : External wire SE : Airtight container TW : Trigger electrode
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