TWI296829B - Method of preventing dishing during chemical mechanical polishing and manufacturing semiconductor device - Google Patents

Description

1296829 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method for preventing a chemical mechanical polishing recess. [Prior Art] With the rapid development of semiconductor manufacturing technology, in the development and design of ultra-large integrated circuits, in order to meet the design trend of high-density integrated circuits, the size of various components has been reduced to sub-micron. After entering the line width of the small ® ® 0.18 micron generation, the conditions of various processes are more stringent than before, and the complexity of the process is also constantly increasing. Chemical Mechanical Polishing (CMP) is a typical method for achieving comprehensive planarization in semiconductor manufacturing. The chemical mechanical polishing process usually uses a polishing pad on a circular grinding platform. The relative motion between the polishing pad and the polishing pad is used to achieve chemical mechanical polishing. However, since the polishing pad used has considerable elasticity, the flatness of the polished layer of the wafer during the chemical mechanical polishing is affected by the shape of the surface of the layer to be polished, and the surface has a concave shape, resulting in The occurrence of the depression effect. The dielectric deposition layer with the high and low undulations of the surface layer of the wafer is uneven in the deposition process, which makes the lithography and exposure focusing of the subsequent deposited film layer difficult to affect the quality of etching or deposition, so flattening is particularly important in the semiconductor process. Flash memory, one of the memory storage methods of the memory cell is a floating gate. As the line width is reduced, the 0492-A40541TWF 5 !296829 is more severe. Define the active area a^eT) at the same time 'and the cell array area (celi array, the moving area is also defined as floating closed, shallow groove isolation structure is called the mouth of the mouth. But there are areas That is, the floating space is too large, and the visibility of the centrifugal-^ red is too large, and the brake material is lost. The floating of the brake material is caused by the depression. Therefore, the object of the present invention is the manufacturing method of the depression, and ^^ The prevention of the lingering of the lingering machine affects the subsequent process, and the subsequent problems are reversed. The next day, the concave body is produced. [Inventive content] A main purpose of the present invention is a manufacturing method including tracing prevention. The mechanical grinding concave structure and the second shallow groove heart 盖 cover; 1 旻 a number of first-shallow groove isolation steam, the cover structure has a first gap and the two adjacent ones -: ίί;=? Two gaps, followed by comprehensive formation of a patterned protective layer for conducting Above, the active area surface definition - less than the - gap _ θ, the width of the patterned protective layer R, a gap, remove the conductive layer 2: the surface gets a substantially flat whistle _, = + 隹The removal of the active area surface protection layer of the first gap, the first-V electrical layer, and finally the patterning method of the invention, the manufacturing method of the other φ i θ AA & recess, including one person: 弋 chemical mechanical polishing The second shallow ditch # p has a first-shallow trench isolation knot ^ day ^ away from the structure and the active area of a temple, Lishi Jin trench isolation structure is wider than the first _ soil bottom where the brother two shallow 苒 see the younger brother Trench isolation structure' then comprehensively

0492-A40541TWF 1296829 After the first and second shallow trenches are isolated from the substrate for chemical mechanical polishing, a positive gap is formed between the active regions to form a first gap, and a second gap is formed between the structures to fill the first gap. The gap and the surface of the active region define a patterned protective layer having a width smaller than the second cannization, and thereby removing the first patterned patterned protective layer on the surface of the active region of the gap. An oxide layer is deposited over the structure, and the process is further performed to remove excess oxide layer, which is private to the adjacent first shallow trenches and forms a first conductive layer between the two adjacent second shallow trenches Layered on the substrate and in the two gaps, and then on the second gap of the protective layer on the conductive layer, the pattern f gap, and then the first conductive layer is protected to avoid flattening the resulting second conductive layer Indentation, finally, another main object of the present invention is a half: including providing a localized deposition pad oxide layer and forming a plurality of first shallow trench spacers in the nitrogen-cutting substrate, wherein the semiconductor is defined by the shallow trench The junction of the component: the structure is wider than the first shallow trench isolation first and the second shallow trench isolation; structure: grinding, to remove excess oxide layer, for nitriding (four), two adjacent A shallow trench isolation structure forms a first -= = two adjacent second shallow trench isolation structures. The second gap is wider than the first gap, and then the middle main surface is formed to deposit a protective layer. 2 First cover the measurement of the first gap and the second gap i ί first door width and pattern protection The correlation of the layer size 'the basin - the gap is greater than the width of the first gap, and then the correlation"

0492-A40541TWF 7 1296829 Calculate a contraction adjustment value mask on the active layer of the same phase, and pattern the photoresist layer with the active region to pattern the protective layer, and then planarize the conductive layer, the protective layer on the active region surface Removed. [Embodiment], a shrink mask is formed according to the shrinkage adjustment value, and then a photoresist is formed on the shrink mask to expose the photoresist to obtain a mask to etch the protective layer to obtain a protective layer. The width of the patterned protective layer is smaller than the second gap, and the second gap conductive layer is prevented from being recessed by patterning the protective layer. Finally, the patterning is performed. The present invention will be further advanced by the following preferred embodiments. The detailed description is to be considered as illustrative and not restrictive. Please refer to FIG. 1 ' 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 There is a first gap between the structures 110. The trench isolation structure 120 has a second gap: 14 〇, the trench isolation structure can be A 〃 r, the first... beast: 4 edge material. In some embodiments:; in his case, in the first and second shallow trenches ί == two m by the active region of the second phase of the first layer 15Q on the substrate 100, the bulk material . A semi-conductor such as an early day, an eclipse, or an epitaxy, is disposed on the surface 180 of the active region 160 of the second gap 140.

0492-A40541TWF 1296829

The first protective patterned layer 1Q 190 of the palace Geng W1 is on the conductive layer 150, and the patterned protective layer ensures the width W2 of the second gap of the tcT. The definition of the pattern is as follows. Referring to FIG. 1, the first layer 170 is formed on the first conductive layer 150, for example, wherein the protective layer is deposited to a thickness of about 10,000 Å. The selectivity of the conductive layer relative to the protective layer is higher than 100, i then 'Please refer to Figures 2 and 3, first form a photoresist in the protective layer 170 to obtain 3 to the movable region shrink mask 2 曝光 expose the photoresist The patterned photoresist layer 2 is developed; the screen is patterned to lick the protective layer. Performing _ to obtain a patterning 〇ϋ 丄 丄 ’ 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在Measure the width W3 of the gap and the width W4 of the second gap, and the gap width and the patterned protective layer 19G size and the gap width W4 are larger than the first gap official axe... (1) The younger brother--------------------- Visibility W3' is estimated based on this correlation and is based on the shrinkage adjustment value. The active area shrink mask 2〇' in the same phase as the active area first cover 10 is covered by 200, and the protective sound α-tea is especially resistant. In general, as shown in FIG. 2, the distance between the sidewalls 220 of the patterned protective layer 190 and the active region 160 is about _3_~^, Γ和/ΐ化▲ The width W1 of the layer 190 is at least greater than 〇.5 (four), and further, the width W2 of the gap 140 is at least greater than =1/m. Active region shrink mask 2 and active area light used in the present invention

0492-A40541TWF 9 1296829 ^ is in phase 'its smaller than the original active area mask for each side to reduce Q plus ~ ^ remove 'to remove part of the first conductive layer 150, between the two: learn mechanical grinding or earn, to On the surface (10) of the second and second conductive layers 21, the surface of the surface is substantially flattened to avoid φ Φ # and σ, and the protective layer 190 can be patterned thereby to form a second surface 18 The conductive layer 2) produces a recess 19〇. , " remove the patterned protective layer by dry or wet etching, etc.: the package includes the first to provide a semiconductor groove bottom, forming a plurality of first shallow second coffee in the substrate 3〇0# The active area of the 钆疋义+ V body element is wider than the structure of the first shallow groove 一 ' 成 沟槽 沟槽 emulsified 矽 layer 530 in part of the tantalum nitride layer 520, the first and ^ shallow trench isolation structure Above 310, 320. The younger brother and the younger brother refer to Figure 6, and then carry out the chemical test on the substrate 300 ==, 530, and then nitriding:: Gap: two or two adjacent, ▲ r罘 a gap 340 is wider than the first one Ρη sister, "n 35〇^μ±μ^^33〇π gap 330 and the second gap 34", and in the second gap 3 true: region: ί - protective layer on the conductive layer 350, then, provide - a moving-first cover, sub-measures the width of the first gap and the second gap,

0492-A40541TWF 10 1296829 to establish the correlation between the gap width and the size of the patterned protective layer, straight> the width of the gap is greater than the width of the first gap, and then the correlation value = a contraction adjustment value, based on the shrinkage adjustment value盥 盥 盥 盥 同 同 同 收缩 收缩 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在The width of the patterned protective layer is smaller than that of the first layer, and the conductive layer 350 is formed, and the protective layer is patterned to avoid the conductive layer on the surface of the active region. Producing a concave. To & ^ = in the fabrication of a flash memory component, where this flat 'guide 7 finally, the removal of the patterned protective layer is performed. 2: The present invention has been disclosed by the preferred embodiment as defined According to the present invention, the application of the present invention is based on the application of the patent scope of the present invention. [Appropriate Description of the Drawings] FIG. 1 is a diagram showing the shallowness of the gap according to the present invention. The conductive layer above the trench isolation structure is shown in Figure 2. According to the second protection, the schematic layer of the conductive layer on the top of the conductive layer is patterned to obtain a substantially flat 'Λ, — the flattening of the λ domain - the fourth figure is based on: = electricity 1 is a schematic diagram of a shrink mask. The formation of the active area of the month is the fifth embodiment of the present invention - Fig. 6 is a schematic view of the manufacturing method of the present invention.

0492-A40541TWF 1296829 Fig. 7 is a schematic view showing a method of manufacturing a semiconductor device of the present invention. [Main component symbol description] 10~ active area mask; 20~ active area shrink mask; 100, 300~ substrate; 110, 310~ first shallow trench isolation structure; 120, 320~ second shallow trench isolation structure ; 130, 330~ first gap; 140, 340~ second gap; 150~ first conductive layer; 160~ active area; 170~ protective layer; 180~ surface; 190, 360~ patterned protective layer; Photoresist layer; 210~ second conductive layer; 220~ sidewall; 350~ conductive layer; 510~ pad oxide layer; 520~ tantalum nitride layer; 530~ oxidized stone layer. 0492-A40541TWF 12

Claims (1)

1296829 X. Patent application scope: 制造·—The manufacturing method for preventing chemical mechanical grinding recesses (Dishi), including: -, & a substrate, including a plurality of first shallow trench isolation structures and a detached structure, two Adjacent to the first shallow trench isolation structure 2 » brother a gap and two adjacent shallow trench isolation structures have a second gap; comprehensively, forming a first conductive layer on the substrate; The surface of the lightning spread is defined as: a patterned protective layer on the guide, the width of the patterned protective layer is smaller than the second gap; and the flat conductive layer is obtained on the surface of the second gap - the first a second conductive layer; and removing the patterned protective layer. The second method of preventing chemical mechanical grinding according to the first item of the ttt 2, the first method of the manufacturing method, and the transfer certificate, the surface of the gap, and the surface of the gap is an active area. The prevention of chemistry 3 (4) The conductive layer is defined by: the patterned protective layer on the first deposition a protective layer on the first conductive layer; forming a photoresist On the protective layer, the layer is obtained as a mask. The protective layer (4) is as follows: (4) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Measure the gap between the brother and the second life and the patterned protective layer: see: middle: (2) the gap is greater than the width of the first gap; and the gap between the two is determined by the correlation. Value · Dynamic zone shrinkage: Whole value production - The manufacturing method of the main recess in phase with the active area mask is described as the distance between the prevention of chemical mechanical polishing sidewalls is about 'two 5 layers and the second gap. Printing patent range 1 ^ ^ ^ ® lilm ill4^ M ^ ^ Shrinking hood is more than the original active area reticle 9 · as in the patent application > The manufacturing method of the depression static ^ ^ chemical mechanical grinding of the German layer deposition The thickness is about several hundred angstroms. The method of manufacturing a chemical mechanical polishing recess according to claim 1, wherein the conductive layer comprises a single crystal germanium, a polycrystalline germanium, or a silly crystal. 11. The method of preventing chemical mechanical polishing as described in claim 1, wherein the protective layer comprises tantalum nitride. 12. The method of manufacturing a chemical mechanical polishing recess according to claim 1, wherein the shallow trench isolation structure comprises an insulating material such as ruthenium oxide. The method of manufacturing a chemical mechanical polishing recess according to claim 1, wherein the step of removing the patterned protective layer comprises a dry or wet etching. 14. A method of fabricating a chemical mechanical polishing recess, comprising: providing a substrate comprising a plurality of first shallow trench isolation structures and a second shallow trench isolation structure, the second shallow trench isolation structure being wider than the first a shallow trench isolation structure; forming an oxide layer over the first and second shallow trench isolation structures; performing a chemical mechanical polishing process on the substrate to remove the excess oxide layer; An etchback process is performed to form a first gap between the two adjacent shallow trench isolation structures, and a second gap is formed between the two adjacent shallow trench isolation structures; Conductive layer on the substrate and filling in the first gap and the second gap; on the surface of the second gap, defining a patterned protective layer on the conductive layer 0942-A40541TWF 15 1296829 electrical layer ; = ===: a wide center of the second gap; the patterned second protective layer obtained after flattening avoids sinking; and the second conductive layer on the surface of the gap creates a recessed patterned protective layer. 5) The manufacturing method of the iv4 grinding recess of the patent application scope, wherein the step of manufacturing the second chemical surface of the second surface is to prevent the chemical mechanical layer from being formed by the protective layer of the size of the smashing material. Depositing a protective layer on the first conductive layer; forming a photoresist on the protective layer; θ exposing the patterned photoresist layer to the photoresist by an active region shrink mask; and a ten-inch exposure cheek shirt To the mask with a patterned photoresist layer, the protective layer is patterned to a protective layer. The method for preventing chemical cracking (four) according to claim 16 of the patent application scope, which further comprises: providing an active area mask; ^ the first gap and the width of the second gap, To establish the gap is the correlation of the size of the protective layer of the 〃, k, and the width is greater than the width of the first gap; ^ a gap is used to estimate a shrinkage adjustment value according to the correlation; and the initiative is made according to the shrinkage adjustment value The reticle active area shrinks the reticle; and the master of the enamel uses the patterned photoresist layer as a mask, and the protective layer is etched to obtain a patterned protective layer at 0492-A40541TWF 16 1296829. The chemistry of the active zone described in item 17 of the diagnosing range can be the reticle of the active zone between the second gaps. 1糸19. The method of manufacturing a prophylactic chemical machine as described in claim 14 wherein the distance between the patterned protective layer and the wall: is about 3.3#m~5/zm . The method of manufacturing the I: according to claim 14, wherein the patterned protective layer has a width to the manufacturing method of preventing chemical grind pits as described in claim 14 of the patent application scope, Wherein the width of the second gap is at least as large as /= m. ,on·! For example, the method for manufacturing a chemical mechanical grinding method according to the seventh paragraph of the patent scope is as follows: wherein the active area shrinking reticle in phase with the active area mask is smaller than the original active cover by the cover G. 3A m~ 5/zm. 23. The method of manufacturing a prophylactic chemical mechanical method as described in claim 14, wherein the protective layer has a deposition thickness of about several hundred = a prophylactic chemical mechanical research described in claim 14 A manufacturing method, wherein the conductive layer comprises a single crystal dream, a polycrystalline hair, or a crystallite. 25. The method of preventing chemical mechanical research 0492-A40541TWF 17 1296829 according to claim 14 of the patent application, wherein the protective layer comprises tantalum nitride. The preventive chemical mechanical research materials mentioned in Item 14 of the F. The method, wherein the shallow trench system comprises an insulating etched surface such as yttrium oxide, and the preventive chemical mechanical research described in item 17 includes a dry or etched process, wherein the shallow trench is separated from the structure By lithography and: 29· The manufacturing method of the patented range μ μ sag, wherein the oxidation:::Pre-study mechanical vapor deposition process is formed. 0492-A40541TWF 18