1296355 九、發明說明： 【發明所屬之技術領域】 本發明係提供一以矽化酸性高分子材料之壓印 圖案轉移製程，特別是本發明係利用至少包含一酸性 單體及一含矽單體之複數個單體，以共聚合方式合成 出一酸性矽化聚合物之高分子阻劑，以一環保型鹼性 水溶液作為去阻劑去除該高分子阻劑之殘留液，可應 用於相關可撓式液晶顯示器，軟質印刷電路板製程及 可撓式基材光電顯示器等電子及光電之產業中。 【先前技術】 西元1996年Stephen Chou率先將壓印模製 (compression molding )技術應用在半導體蝕刻的 圖案轉印中，請參閱『第8圖』所示，係習用之壓印 製程示意圖。如圖所示：該壓印模製技術與刻印章類 似，係將先以習用之微蝕刻技術（如：光罩、電子束、 聚焦離子束等）將所需轉印的圖案或負片製版於一模 版材料8 1 (如：矽晶圓）上，再以一聚曱基丙烯酸 曱酯 8 2 ( Polymethyl methacrylate，PMMA)作為” 印泥”（亦即為”阻抗層（RESIST) ” ），將該聚曱 基丙烯酸曱酯8 2塗佈在一元件基板材料8 3上，並 利用一特殊儀器施以壓力及溫度進行壓印製程8 1296355 4，將該模版材料8丄壓印在該聚f基丙烯酸甲酯8 2 Ji ,亦即將該模版材料8 i上的圖案轉印到該聚甲 基丙烯酸甲酯8 2上，再經過乾式蝕刻8 5 (如：電 裝（PLASMA)或反應性離子蝕刻（React|.ve —c etching’ RIE)進行蝕刻，即可得到所需的圖案，該 壓印模製技術亦稱為熱壓製程（H〇t emb〇ss|.ng imprint lithography) 〇 、凊參閱『第9圖』所示，係習用之步進快閃壓印 製程示意.圖。如圖所示：德州大學Austi.n分校的 Willson教授實驗室提出使用紫外光硬化 (UV curing )方式進行微景^技術，亦稱為步進快閃 式微影（STEP AND FLASH)，該步進快閃式微影係 在-石夕晶®上塗佈9 1 -雙層材料，該雙層材料包括 為平坦層之底層及一含矽有機薄膜之上層（亦即蝕 刻阻隔層），再利用鉻石英光罩以等比.(1: 1 )的圖 案，先壓印9 2在該餘刻阻隔層上後進行紫外光曝光 硬化9 3及離型94，再利用氧化（〇2)則95技 術將上述之圖案轉印至該平坦層之底層，及得到一圖 案轉移材料9 6。 “但由於上述之熱壓製程及紫外光硬化方式以感 光紫外光硬化方式進行微影製程，當該微影製程於圖 ^轉移層钱刻完時，於該圖案轉移層上均殘留有一定 里的阻劑’習用之壓印製程中會使用乾式姓刻去除殘 ⑧ 1296355 留之阻劑，而該乾式钱刻去除既耗費時間且易使已經 餘刻好的轉移層厨案遭到破壞，且該乾式蝕刻之設備 昂貴又需配合相關耗材使用，使其成本昂貴而無法大 量使用。故，一般習用者係無法符合使用者於實際使 用時之所需。 【發明内容】 因此，本發明之主要目的係在於提供一成本低、 去阻劑製程快速之以矽化酸性高分子材料之壓印圖 案轉移製程。 為達上述之目的，本發明係提供一以石夕化酸性高— 分子材料之壓印圖案轉移製程，係將一甲基丙烯酸曱 酯（Methyl methacrylate，MMA) 、一 η-丙烯酸丁 酯（noma丨一butylacrylate，η-ΒΑ)、一甲基丙稀酸 (Methacrylic acid，ΜΑΑ)與一 3_曱基丙烯氧丙烯 間 三 曱 基 矽 氧 基 矽 曱 烷 ( S-Methacryloyloxypropyl-tris-trimethylsiloxy silane )混合擾拌，再以一偶氮二異腈 (2,2_Azobisisobutyronitrile，AIBN )滴定進行自由 基聚合反應（free radical polymerization)共聚形成 一為酸性矽化聚合物之高分子阻劑。取一可為聚乙烯 對苯二曱酸酯（Polyethylene Terephthalate，PET) 或聚乙烯對苯二曱酸酯/氧化銦錫（Polyethylene Terephthalate /indium tin oxide，PET/ITO)之基材， 1296355 【主要元件符號說明】 甲基丙烯酸甲酯 1 η-丙烯酸丁酯 2 甲基丙烯酸 3 偶氮二異腈 4 3-曱基丙烯氧丙烯間三曱基矽氧基矽曱烷 酸性矽化高分子阻劑6 酸性高分子阻劑7 習用之部分： 模版材料 81 聚曱基丙烯酸曱酯 82 元件基板材料 83 壓印製程 8 4 / 乾式姓刻 85 塗佈 9 1 壓印 9 2 曝光硬化 9 3 離型 9 4 氧化餘刻 95 圖案轉移材料 961296355 IX. Description of the Invention: [Technical Field] The present invention provides an imprint pattern transfer process for deuterated acidic polymer materials, and in particular, the present invention utilizes at least one acidic monomer and one germanium containing monomer. A plurality of monomers are synthesized to synthesize an acidic deuterated polymer polymer by copolymerization, and an environmentally friendly alkaline aqueous solution is used as a deblocking agent to remove the residual liquid of the polymer resist, which can be applied to related flexible In the electronics and optoelectronics industries such as liquid crystal displays, flexible printed circuit board processes and flexible substrate optoelectronic displays. [Prior Art] In 1996, Stephen Chou took the lead in applying the compression molding technology to the pattern transfer of semiconductor etching. Please refer to the figure shown in Figure 8, which is a schematic diagram of the imprint process. As shown in the figure: the imprint molding technique is similar to the engraved stamp, which is to use the conventional micro-etching technique (such as: photomask, electron beam, focused ion beam, etc.) to plate the desired transfer pattern or negative film. On a stencil material 8 1 (eg, ruthenium wafer), a polymethyl methacrylate (PMMA) is used as an "ink pad" (ie, a "resistance layer (RESIST)"). The poly(mercapto acrylate) 8 2 is coated on a component substrate material 8 3 and subjected to an embossing process 8 1296355 4 by pressure and temperature using a special instrument, and the stencil material 8 embossed on the polyf group. Methyl acrylate 8 2 Ji, that is, the pattern on the stencil material 8 i is transferred onto the polymethyl methacrylate 8 2, and then subjected to dry etching 8 5 (eg, electrical dressing (PLASMA) or reactive ion etching) (React|.ve - c etching' RIE) etching is performed to obtain a desired pattern, which is also called hot pressing process (H〇t emb〇ss|.ng imprint lithography) 〇, 凊Refer to the “Fig. 9”, which is a schematic diagram of the step-by-step flash imprint process. Shown: Professor Willson's lab at the University of Texas at Austi.n proposes a UV-curing method, also known as step-and-flash lithography (STEP AND FLASH). The lithography system is coated with a 9 1 -layer material on a layer of enamel, comprising a bottom layer of a flat layer and an upper layer of a ruthenium-containing organic film (ie, an etch barrier layer), and then using chrome quartz light. The mask is embossed with a ratio of (1:1), first embossed 9 2 on the remaining barrier layer, and then subjected to ultraviolet light exposure hardening 9 3 and release 94, and then oxidized (〇2) to 95. The pattern is transferred to the bottom layer of the flat layer, and a pattern transfer material 96 is obtained. "But the lithography process is performed by the photosensitive ultraviolet curing method due to the above-mentioned hot pressing process and ultraviolet curing method, when the lithography process is performed. Figure ^ When the transfer layer is engraved, there is a certain amount of resist remaining on the pattern transfer layer. In the imprint process, the dry type is used to remove the residue 8 1296355, and the dry money is removed. It is time consuming and easy to make the transfer layer The device is damaged, and the dry etching device is expensive and needs to be used in conjunction with related consumables, so that it is expensive and cannot be used in a large amount. Therefore, the general practitioner cannot meet the needs of the user in actual use. The main object of the present invention is to provide an embossing pattern transfer process for purifying an acidic polymer material with a low cost and a fast process for removing a resist. In order to achieve the above object, the present invention provides a high acidity of Shi Xihua. The embossing pattern transfer process of molecular materials is Methyl methacrylate (MMA), n-butyl acrylate (η-ΒΑ), and Methacrylic acid. , ΜΑΑ) mixed with a s-Methacryloyloxypropyl-tris-trimethylsiloxy silane, and then an azobisisonitrile (2,2_Azobisisobutyronitrile, AIBN) The titration is carried out by free radical polymerization to form a polymer resist which is an acidic deuterated polymer. Take a polyethylene terephthalate (PET) or polyethylene terephthalate / indium tin oxide (PET/ITO) substrate, 1296355 [mainly Description of component symbols] Methyl methacrylate 1 η-butyl acrylate 2 methacrylic acid 3 azodiisonitrile 4 3-mercapto propylene oxypropylene m-tridecyl decyl oxane acid oxime polymer blocker 6 Acidic polymer resistant 7 Conventional part: Stencil material 81 Polydecyl acrylate 82 Component substrate material 83 Imprint process 8 4 / Dry type engraving 85 Coating 9 1 Imprinting 9 2 Exposure hardening 9 3 Release type 9 4 Oxidation Residual 95 Pattern Transfer Material 96