TWI292932B - Composition for etching metal layer and method of forming metal pattern using the same - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composition for etching a metal layer, and more particularly, to a composition for etching a metal layer, and a liquid crystal. A method of forming a metal pattern of a display device. [Prior Art] The etching process is a step of forming a minute pattern on a substrate. A pattern, for example, a metal wire having the same shape as that of the photoresist pattern (Photo = sist httern) obtained by the developing step, which can be formed by etching. The engraved process can be divided into two types: wet quotation and dry remnant. In the wet engraving process, the photoresist layer is used as a mask, and the exposed film layer is chemically etched into a pattern with an acid-containing composition. In the dry-type process, the photoresist layer is used to remove the exposed film sound by the ions in the plasma, and the etching is easier to control than the wet etching, and is thirsty-etched. The pattern formed by the process is compared to 'dry etch through, Ξ case, with: non-isotropic shape (1...(10)(4). Lack: big == required damage is quite expensive, and difficult to apply, rate is not... The production capacity of the dry-type engraving process is reduced. Two: The substrate with a large number of substrates is processed by a wet remnant process to process the Si engraving rate high. Therefore, the productivity is relatively increased. The 1292293 etching process requires a large amount of etchant and deionized water ( Dei〇nized Wat er) 'There is a large amount of waste liquid. Generally, after the dry etching process, the cured photoresist pattern is removed by the plasma ashing process, thereby increasing the patterning process time and reducing Production yield. Therefore, the wet etching process is widely used, especially on metal patterns. In addition, various etchants are applied depending on the type of metal layer used to form the minute metal pattern. For example, Korean Patent No. 2000- 00 No. 47933 and U.S. Patent No. 4,829,617 disclose etchants for use in the layer of Ai, including phosphoric acid, nitric acid, acetic acid, water, and surfactants. Korean Patent No. 2000- 0047 933 also discloses the use of etching aluminum-titanium ( The etchant of the A1Nd) layer includes scaly acid, nitric acid, acetic acid, water, and a Fluoric Carbonic surfactant. Further, Korean Patent No. 2001-0030192 discloses etching of an aluminum (A1) layer and an indium tin oxide. The etchant of the (ITO) layer includes oxalic acid, hydrochloric acid, phosphoric acid, nitric acid, and an acid which adjusts the pH of the etchant to 3 to 4.5. Korean Patent No. 2001-0065327 is not used for the silver (Ag) layer. The etchant of the silver (Ag) alloy layer includes phosphoric acid, nitric acid, acetic acid, and potassium oxysulfate (Potassimum Oxysulfate). Korean Patent No. 2002-00102 84 discloses that an etchant for etching indium tin oxide (ITO) includes hydrochloric acid, Acetic acid, Blocker, and water. Further, Korean Patent No. 2001-0018354 discloses an etchant for etching a molybdenum (Mo) layer and a molybdenum tungsten (MoW) layer, including phosphoric acid, nitric acid, acetic acid, and oxidation reaction control. Agent and water. 1292932 When the thin film transistor liquid crystal display (TFT-LCD) is enlarged, the metal wire transmitting the signal in the TFT-LCD will also be elongated, causing the resistance of the metal wire to increase and the increase in resistance will cause signal delay. Therefore, it has been proposed to use An etchant capable of etching a plurality of metal layers at the same time to avoid signal delay, and an etchant capable of simultaneously etching a plurality of metal layers has been developed to improve the efficiency of equipment and processes. For example, Korean Patent Nos. 2000-000286 and 2001-0072758 disclose An etchant for etching a molybdenum/aluminum (Mo/Al) layer, a molybdenum/aluminum lanthanum (M〇/AiNd) layer, and a molybdenum tungsten/aluminum lanthanum (MoW/AINd) layer includes phosphoric acid, nitric acid, acetic acid, and an oxidation reaction controlling agent. Further, Korean Patent No. 2000-0013867 discloses a money engraving agent for etching a molybdenum/aluminum/molybdenum (Mo/Al/Mo) layer and a molybdenum/aluminum-titanium/molybdenum (Mo/AINd/Mo) layer including linonic acid and nitric acid. , acetic acid and oxidation reaction control agent. Korean Patent No. 2002-0017093 also discloses a layer of molybdenum/aluminum-titanium (Mo/A1Nd) layer, molybdenum-tungsten/aluminum-niobium (MoW/AINd) layer, 锢/明鈥/纠 Mo/A1Nd/M〇 layer Etching agents for molybdenum crane/sodium titanium/indium tungsten (MoW/AINd/MoW) layer, molybdenum (Mo) layer and indium tungsten (MoW) layer include phosphoric acid, nitric acid, acetic acid, molybdenum etching inhibitor (yttrium salt) and water . However, when the gate line, data line, and pixel electrode of the LCD have a layer of sacred layer, it is almost impossible to obtain a perfect shape using the surname of the prior art. In order to obtain a perfect shape, the dry etching process and the wet etching process are repeated. If the dry etching process and the wet etching process are repeated, the production yield is lowered and the production cost is increased. SUMMARY OF THE INVENTION Accordingly, the present invention is directed to a composition for a (four) multilayer metal layer that substantially obviates one or more of the problems caused by the limitations and disadvantages of the conventional techniques. SUMMARY OF THE INVENTION A primary object of the present invention is to provide a composition which can etch a plurality of metal layers to form a multilayer metal pattern having an excellent shape. Another purpose of this syllabus is to provide a composition that can be used to form the gate of the lumps (MQ/A1Nd) layer, to form the material, the ruthenium (Mo) layer, and to form Indium (ITO) layer of a halogen electrode. A further object of the present month is to provide a method of forming a metal pattern having an excellent shape by using a composition for etching a plurality of metal layers. Another object of the present invention is to provide a method for forming a multilayer metal pattern using only wet etching without using a dry etching process to provide a composition having a lower surface tension. A method of forming a uniform metal pattern. Other features and advantages of the present invention will be apparent from the following description, or may be made apparent by the embodiment of the invention. The objects and advantages of the present invention will be apparent from the description and the appended claims. In order to achieve the above and other objects, the present invention provides a composition for etching a metal layer comprising: -5% by weight of phosphoric acid having a weight percentage of about 55% to 8 Å/min, and a nitric acid having a weight percentage of about 3% to 15 Å/min. A heavy acid salt with a weight percentage of about 5% to 20% acetic acid, a weight percentage of about 0.5% to 1% by weight, and a chlorine compound with a weight percentage of about 1·1% to 5 〇/〇. Compound ), about 0.01% to 4% by weight of an azullic compound, and water. In another aspect, the present invention provides a method of fabricating an Array Substrate of a liquid crystal display: forming a gate line and a gate connected to a gate line on the substrate; forming a gate line and a gate insulating on the gate a layer (Gate Insulating Layer); a semiconductor layer forming a gate insulating layer corresponding to the gate; forming a data line on the gate insulating layer; and a source electrode and a drain electrode (Drain Electrode) on the semiconductor layer; a data line and a passivation layer on the source and the drain, the passivation layer has a drain contact hole exposing the drain; and a halogen electrode is formed on the passivation layer, and the halogen electrode is through the drain contact hole a drain connection, wherein at least one of the wire, the data line, and the halogen electrode is formed by using a composition for etching the layer, the composition comprising: a weight percentage of about 55 〇 / ◦ to 80% Phosphoric acid, about 3% by weight to nitric acid, about 5% to 20% by weight of acetic acid, about 0.5% to 10% by weight of phosphate, and the weight percentage is about ο"% to 5%. Chlorine compound, heavy The percentage of the quantity is about 1% to 4% of G (). The present invention provides a method for forming a metal pattern, which comprises: forming a metal layer on an insulating layer; forming a photoresist pattern on the metal layer by 1292932; and etching the metal layer The composition of the metal layer is engraved. The composition for etching the metal layer comprises: about 55% to 80% by weight of phosphoric acid, about 3% to 15% by weight of nitric acid, and about 5 by weight. . /() to 2% by weight of acetic acid, about 0.5% to 1% by weight of phosphate, about 0.1% to 5% by weight of chlorine-containing compound, and about 〇〇1% to 4% by weight % of salivary compounds, and water. The above and other objects, features, aspects and advantages of the present invention will become more < DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the drawings. The multilayer metal pattern of the display can be formed by etching the composition for the multilayer metal layer according to an embodiment of the present invention, wherein the display is, for example, a liquid crystal display (LCD), a plasma display (PDP), or an electroluminescent display ( ELD) and Field Emission Display (FED). This article will use LCD liquid crystal display as an example. The composition for etching an etched metal layer according to an embodiment of the present invention comprises: about 55% to 8% by weight of phosphoric acid (IPO4), about 3% to 15% by weight of nitric acid (HNO3), and weight. A percentage of about 5% to 20% acetic acid (CH3C00H), a weight percentage of about 0.5% to 10% phosphate, a weight percentage of about 1% to 5% of a chlorine-containing compound, and a weight percentage of about 0.01% to 4% azole compound, and water. Materials such as phosphoric acid, nitric acid, acetic acid, and water in the invention of 1292932 may be clean and used directly in a semiconductor process or after a purification step. The composition for etching an etched metal layer according to an embodiment of the present invention may comprise phosphoric acid (HsPO4) in an amount of from about 55% to about 80% by weight, preferably from about 5% to about 75% by weight. Phosphoric acid (H3P〇4) decomposes alumina (A丨2〇3) produced by the chemical reaction of nitric acid (HNO3) with aluminum (AI). As a result, the rate of surnames has increased and production capacity has increased. The composition for a metal layer of a surname according to an embodiment of the present invention may comprise from about 3% to 15% by weight, preferably from about 5% to 10% by weight of nitric acid (hno3). Nitric acid (hno3) chemically reacts with aluminum (A1) and produces oxidation (A12 Ο 3). For example, when the composition of the present invention is used to etch a molybdenum/aluminum lanthanum (Mo/AINd) double layer, the etch rate between the //铭 (Mo/A INd) double layer and other layers can be obtained by weight percentage. Effectively adjusted between 3% and 15% of the lithospermic acid. When the weight percentage of nitric acid (HN〇3) in the composition is less than about 3%, an undercut phenomenon occurs, that is, the etched portion of the underlying aluminum (A1Nd) layer is higher than the upper layer of molybdenum (M〇) layer. Big. The composition for etching an etched metal layer according to an embodiment of the present invention may comprise from about 5% to 20% by weight, preferably from about 8% to 15% by weight of acetic acid (CH3CO〇H). Acetic acid (CH3CO〇H) is the opposite

Rate optimized buffer. Therefore, the etching rate is increased and thus the productivity is increased. W 12 1292932 A composition for etching an etched metal layer according to an embodiment of the present invention may comprise from about 0.5% to about 10% by weight, preferably from about 1% to about 5% by weight of the phosphate. Phosphate has the function of adjusting the etching rate of molybdenum (M〇) and decomposing the function of alumina produced by chemical reaction of nitric acid (HNO3) with aluminum (A1). For example, when the composition of the present invention is used to etch a molybdenum/aluminum lanthanum (Mo/AINd) double layer, the undercut phenomenon can be avoided. That is, the lower portion of the AINd layer is prevented from being more than the upper layer of molybdenum. The (Mo) layer is large. Further, when the composition of the present invention is used for a molybdenum (Mo) single layer, an excellent metal pattern can be formed. For example, phosphates may include NaH2P04, Na2HP〇4, Na3HP04, NH4H2P〇4, (NH4)2HP〇4, (nh4)3p〇4, kh2po4, K2HP04, K3P〇4,

One of Ca(H2P04)2, Ca2HP04 and Ca3P04 is preferably one of NH4H2P〇4 and KH2P04. The composition for etching an etched metal layer according to an embodiment of the present invention may comprise a gas-containing compound (chl〇) having a weight percentage of about 〇·1〇/❶ to 5%, preferably about 0.5〇/〇 to 2%. Ric compound). The chloride-containing compound can adjust the etching rate of indium tin oxide (ITO) and molybdenum (Mo). In addition, the gas-containing compound can also adjust the nicking rate between the Mo/AINd double layer and other layers. For example, when the composition of the present invention is used to etch a molybdenum/aluminum lanthanum (Mo/AINd) double layer, the etching rate between the indium/[Mo/AINd] double layer and other layers can be approximated by weight percentage. Between 1 · 1 % and 5% of the chlorine-containing compound is effectively adjusted to avoid undercutting, that is, to avoid the etching of the lower layer 13 1292932 (A1Nd) layer than the upper layer of molybdenum (Mo) The floor is large. This f, when the composition of the present invention is purely engraved! When a single layer of Mo (Mo) and a single layer of indium tin oxide (ITO) are formed, an excellent metal pattern can be formed. For example, the chlorine-containing compound may include one of HCl, NH4C1, KC1 and FeCl3, preferably one of NH4C1 and KC1. The composition for the metal layer of the surname according to an embodiment of the present invention may comprise a salivary compound having a weight percentage of about %1% to 4%, preferably about 0.05% to 1% (az〇Hc c 〇mp〇und). The azole compound can adjust the etching rate between molybdenum (M〇) and aluminum bismuth (A1Nd). For example, when the composition of the present invention is used to etch a molybdenum/aluminum-titanium (Mo/AINd) double layer, the etch rate between the upper layer of the molybdenum (M〇) layer and the lower layer of the aluminum yt (AINd) layer can be Effectively adjusted by a sigma-like compound having a weight percentage of between about 0·0 1 /ί) and 4%. Therefore, the formation of a molybdenum/moulding layer of a stair step taper profile can be avoided, thereby avoiding the inclination angle of the upper molybdenum (Mo) layer and the lower layer of aluminum 鈥 (AINd). The layers are different, so that a molybdenum/aluminum lanthanum (Mo/AINd) double layer having an excellent inclination angle of less than about 6 angstroms can be obtained. In addition, the process margin is also improved due to the reduced critical dimension loss. For example, the azole compound may include Benzotiazole, Aminobenzoic Acid, Aminobenzamid, 2-amino-5-mercaptobenzoic acid (2-Amino-5). -nitrobenzoic acid), benzoquinone 14 1292932 (Benzazimide), Methylbenzotriazole, Aminotetrazole, Methylaminobenzoate, benzotriazole One of the carboxylic acid (Benzotriazole Carboxyl Acid), CobraTec 98, CobraTec 99 and CobraTec 928 is preferably an amino group. The composition for etching an metal layer according to an embodiment of the present invention may include water. Water decomposes alumina (Al2〇3) produced by chemical reaction of nitric acid (HN〇3) with aluminum (A1), and the composition is diluted. For example, the water may comprise deionized (DI) water filtered by the ion exchange resin, preferably deionized water having a resistivity greater than about is Μ Ω · cm. The present invention provides a method of forming a metal pattern in a liquid crystal display using a composition for etching a metal layer; and a method of manufacturing a liquid crystal display using a composition for a metal layer. A liquid crystal display (LCD) includes a first substrate (First

Substrate), a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. The gate line and the data line are formed on the first substrate. The Pixel Region is defined by the gate lines and data lines of the parent fork. A halogen electrode and a thin film transistor (TFT) as a switching element are formed in a halogen region on the first substrate. The pixel electrode is composed of a transparent conductive material such as indium tin oxide (ITO) and indium zinc oxide 15 1292932 (IZo). The thin film electro-crystal system is connected to the gate line and the data line. A black matrix is formed on the second substrate, and a color filter layer including color filters such as red, green, and blue is formed on the black matrix. a common electrode (Common Electrode) formed on the color filter layer, at least one of the gate line, the data line, and the halogen electrode is made of a conductive material such as metal by wet etching using the composition of the present invention耘, but not formed by a dry etching process. For example, the gate line may be formed of a molybdenum/aluminum (Mo/AINd) double layer, and the data line is formed by a molybdenum (Mo) single layer. The element electrode may be formed of a layer of indium tin oxide (ITO). The gate line of the molybdenum/aluminum lanthanum (Mo/AINd) double layer is formed by a wet etching process using the composition of the present invention, and has no bottom. The phenomenon of dicing (ie, the etched portion of the underlying aluminum yt layer is larger than the ruthenium (Mo) layer of the upper layer). In addition, the molybdenum (M〇) single layer data line and the indium tin oxide (ITO) layer The halogen electrode is formed by a wet etching process using the composition of the present invention, which has an excellent tapered shape. Therefore, it is subsequently formed in the 'electric layer' on the metal pattern including the gate line and the pixel electrode. Electrical opening ( eleCtriC 〇pen ) case and metal diagram such as gate line The short circuit between the case and the subsequent conductive layer formed on the metal pattern can be avoided. In addition, due to the molybdenum/aluminum-titanium (Mo/AINd) double-layer gate line and the molybdenum (M〇) single layer data line And the indium tin oxide (IT0) layer of the halogen electrode is formed by using the same composition of the present invention, thereby simplifying the process, improving the efficiency of the 16 1292932 surface and reducing the production cost. Moreover, due to the composition of the present invention The surface tension of the object is low, so that the diffusion ability of the composition is good, so that the etching uniformity in the large-sized substrate is improved. The metal pattern is respectively used in the composition of the embodiment of the present invention and the six control compositions. The results of the composition and the cross-sectional shape, etc., will be explained as follows. The composition prepared in one embodiment of the present invention comprises: phosphoric acid (HJO4) having a weight percentage of about 65%, and nitric acid having a weight percentage of about 8% ( ΗΝΟ3), about 12% by weight of acetic acid (CH3C00H), about 2% by weight of the acid salt, about 1% by weight of the chlorine compound, about 0.1% by weight of the azole compound, And water. In addition, the six control compositions comprise about 50 〇/◦ to 65% by weight of phosphoric acid (HsPO4), about 2% to 8% by weight of nitric acid (HNO3), and about 12% by weight. 25% acetic acid (CH3CO〇H), about 2% by weight of sulphate, about 1% by weight of gas-containing compound, about 0.1% to 5% by weight of azole compound, and water The composition of the present invention and the six control compositions are shown in Table 1. Ingredient Example Comparative Control Control Control (weight composition, composition, composition, composition, ratio, %), substance 1, substance 2, substance 4, substance 5, control composition Object 6 17 1292932

After forming a metal layer such as a molybdenum/=^Nd) double layer on a substrate, and a ceramic monolayer and an oxide layer, a photoresist is formed on the metal layer (p 匕, 接接, according to the invention) The composition of the example and the six control groups were hurried, and the metal layer was patterned to form a gold". The spray method was used to carry out the pure engraving. Then, the metal cross-section was examined by a scanning electron microscope (SEM). Sectional Image®. Gastric α(4)^ shows the results of using the composition of the examples of the present invention and six pairs of known compositions. 18 1292932 As shown in Table 2, a composition is etched with a composition according to an embodiment of the present invention. After a layer such as a molybdenum/aluminum lanthanum (Mo/AINd) double layer, a molybdenum (Mo) single layer, and an indium tin oxide (ITO) layer, an excellent metal pattern can be obtained.

Composition of the Example Control Composition 1 Control Composition 2 Control Composition 3 Control Composition 4 Control Composition 5 Control Composition 6 Capsule ◎ X X X X 〇 X

[Note] ◎ (excellent): any metal pattern not in the molybdenum/aluminum-titanium double layer

The undercut is found, and the metal patterns of the molybdenum monolayer and the indium tin oxide layer have an excellent cross-sectional shape. (Good) · The bottom is found in a part of the metal pattern of the Mo/AINd double layer. Cut X (bad) · In each of the metal patterns of the indium/Min (Mo/AINd) double layer, the undercut was found to be poor in the metal pattern of the molybdenum (Mo) single layer and the indium tin oxide (ITO) layer. _ Cross-sectional shape 19 1292932 The scanning electron microscope (SEM) cross-sectional image of FIGS. 1 to 3 shows that an indium tin oxide (ITO) layer and a molybdenum (M〇) are respectively etched by the composition of an embodiment of the present invention. A metal pattern obtained after a single layer and a molybdenum/aluminum lanthanum (Mo/AINd) double layer. The left picture shows the metal pattern and the photoresist pattern (PR) on it, and the right picture shows the metal pattern after removing the photoresist (PR) pattern. As shown in Figure 1, there is an approximately 30. To 6 〇. The metal pattern of the beveled indium tin oxide (ITO) layer has an excellent profile. As shown in Figure 2, there is a 45. The metal pattern of the single-layered molybdenum (M〇) to 70〇 has an excellent shape. Further, the metal pattern of the molybdenum/aluminum-titanium (Mo/AINd) double layer has no undercut, and here, the etched portion of the underlying aluminum 鈥 (AINd) layer is larger than the upper layer of molybdenum (heap) layer. Scanning Electron Microscope (SEM) Cross-Sectional View of Figures 4 to 9 shows a metal pattern obtained by etching a molybdenum/aluminum lanthanum (Mo/AINd) double layer, respectively, against the compositions 1 to 6. As shown in FIG. 4 and FIG. 5, a molybdenum/aluminum lanthanum (Mo/AINd) double layer was etched with the phosphate-free control composition 1 and the control composition 2 having a phosphoric acid (HsPO4) weight percentage of less than about 65%. When the metal pattern is formed, the metal pattern appears undercut. Furthermore, the metal pattern of the molybdenum (M〇) single layer also has a poor appearance. As shown in FIG. 6, when the control composition 3 with a weight ratio of nitric acid (Hn〇3) of less than about 3% is patterned on a molybdenum/aluminum-titanium (M〇/AlNd) double layer, the metal pattern appears at the bottom. cut. Furthermore, since 20 1292932 has a high engraving rate on a single layer of molybdenum (Mo), it is less likely to obtain a critical dimension (CD) of a metallic pattern of germanium. The critical dimension of the random type will be difficult to manage the process. Further, as shown in FIG. 7, FIG. 8, and FIG. 9, when the weight ratio of acetic acid (CH/OOH) is more than about 2% by weight of the control composition 4, the control composition containing no azole compound 5, When the weight ratio of the azole compound is higher than about 4% of the control composition 6 to a metal pattern of a molybdenum/aluminum lanthanum (Mo/AINd) double layer, the metal pattern exhibits an undercut phenomenon. As can be seen from the above, when the indium/aluminum lanthanum (Mo/AINd) double layer is wet-etched with the composition of the present invention, the gate line of the liquid crystal display (LCD) can obtain an excellent shape without undercut. And do not want any dry etching steps. Further, when a molybdenum (Mo) single layer and an indium tin oxide (IT) layer are separately etched by the composition of the present invention, the data lines and the halogen electrodes of the LCD device excellent in appearance can be obtained. Since the gate electrode of the Mo/AIND double layer, the data line of the molybdenum (Mo) single layer, and the pixel electrode of the indium tin oxide (ITO) are all formed by using the same composition of the present invention, Therefore, the goal of simplifying the process, improving equipment efficiency, and reducing production costs can be achieved. Furthermore, since the metal pattern has an excellent shape and does not have any undercut, etc., when the other metal layer is formed on the metal pattern in the post-production system, no problem such as breakage occurs. The above disclosure is a preferred embodiment of the invention. Modifications, refinements, improvements, or variations that can be readily made by those skilled in the art of this invention are not intended to limit the scope of the claimed invention.

22 1292932 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a scanning electron microscope (SEM) showing a composition of an indium tin oxide (IT0) layer formed using an embodiment of the present invention. Performing a metal pattern obtained by etching;

2 is a cross-sectional image of a scanning electron microscope (SEM) 'a metal pattern obtained by etching a single layer of a molybdenum (Μο) composition using an embodiment of the present invention; FIG. 3 A cross-sectional image of a microscope (SEM) showing a metal pattern obtained by performing m丨 on a molybdenum/aluminum lanthanum (Mo/AlNd) layer using a composition prepared by an embodiment of the present invention; A cross-sectional image of the microscope (SEM) 、~, a metal pattern obtained by etching the molybdenum/Ming titanium double layer using the comparative composition 1; a cross-sectional image of a scanning electron microscope (SEM) , the metal pattern obtained by using the comparative composition 2 on the indium/! Lu/Ti (Mo/AINd) double layer; the cross-sectional image of the scanning electron microscope (SEM) is not used as the control composition 3 pairs of _ / Ming 鈥 (MG / AINd) double-layered (four) 7-times obtained metal pattern;) hemp, warehouse ~ aw ...,, and 4 pairs of molybdenum / aluminum bismuth (Mo / AINd) double-layered金属The metal pattern obtained by the engraving; ) 23 2392932 Figure 8 is a scanning electron microscope (SEM) A cross-sectional image showing the metal pattern obtained by etching the molybdenum/aluminum lanthanum (Mo/AINd) double layer using the comparative composition 5; FIG. 9 is a cross-sectional image of a scanning electron microscope (SEM) showing the use of a control The metal pattern obtained by etching the molybdenum/aluminum-titanium (Mo/AINd) double layer by the composition 6. [Description of main component symbols]

twenty four

Claims (1)

1292932 X. Claims Patent Range: A composition for a metal layer of a residual, comprising: phosphoric acid having a weight percentage of about 55% to 8% by weight; nitric acid having a weight percentage of about 3% to 15%; 5% to 20% acetic acid; 5% by weight to about 5% by weight of phosphate; 5% by weight to 5% by weight of chlorine-containing compound; _ by weight of about 〇·〇1% Up to 4% of azoles; and water. 2. The composition for etching a metal layer as described in claim 1, wherein the metal layer comprises a molybdenum/Moxa/A1Nd double layer. 3. The composition for etching a metal layer according to the invention of claim 2, wherein the metal layer comprises a monolayer of molybdenum (M〇). 4. The composition for a surname metal layer according to claim 1, wherein the metal layer comprises an indium tin oxide (IT〇) layer. 5. The composition according to claim 1, wherein the wall acid salt comprises NaH2P〇4, Na2HP04, Na3HP04, νη4η2ρ〇4 λ (nh4)2hpo4^(NH4)3P〇4 &gt; KH2P〇4, One of K2HP〇4, K3P〇4, Ca(H2P04) 2, Ca2HP04 and Ca3P04. The composition for etching a metal layer as described in claim 1, wherein the chlorine-containing compound includes one of Hci, NH4C1, KC1 and FeCl3. 7. The composition for etching a metal layer according to claim 1, wherein the azole compound comprises Benzotiazole, Amin〇b enzoic Acid, and Aminobenzene. Amide (Amin〇benzamid), 2Amino-5-nitr〇benz〇ic Acid, Benziazide, Methylbenzotriazole One of Aminotetrazole, Methylaminobenzoate, Benzotriazole Carboxyl Acid, CobraTec 98, CobraTec 99 and CobraTec 928. 8. The composition for etching a metal layer according to the scope of the invention, wherein the water comprises deionized water. 9 . The method for manufacturing an array substrate, wherein the method comprises the steps of: forming a gate line and connecting a gate electrode of the gate line to a substrate; forming a gate line insulator layer at a gate line and the gate; forming a semiconductor layer corresponding to the gate on the gate insulating layer; 曰26 1292932 forming a data line on the gate insulating layer, and forming a source and a drain Forming a passivation layer on the data line and the source and drain, the passivation layer has a drain contact hole exposing a drain; and forming a pixel electrode on the passivation layer, The pixel electrode is connected to the drain via the drain contact hole, wherein one of the gate line, the data line and the halogen element is formed by etching a composition of a metal layer, the composition The composition comprises from about 55% to about 80% by weight of phosphoric acid, from about 3% to about 15% by weight of nitric acid, and the weight percentage is about 5 °/. To 20% acetic acid, the weight percentage is about 至·5 to 10 ° / ❻, the weight percentage is about 〇 · 〖% to 5% of the chlorine compound, the weight percentage is about 0. 01% to 4% salivary compound and water. The method of manufacturing an array substrate for a liquid crystal display according to claim 9, wherein the gate line comprises a lower layer of an aluminum (AINd) layer and an upper layer of a molybdenum (Mo) layer. The method of manufacturing an array substrate of a liquid crystal display according to claim 9, wherein the data line comprises a layer of molybdenum (M〇). The method of manufacturing an array substrate of a liquid crystal display according to claim 9, wherein the pixel electrode comprises an indium tin oxide (ITO) layer. 13. A method of forming a metal pattern, comprising the steps of: 27 1292932 forming a metal pattern on an insulating layer; forming a photoresist pattern on the metal pattern; and forming a composition for etching a metal layer, Etching the metal layer 'this grade comprises about 55% to 80 weight percent. /〇 phosphoric acid, about 3% to 15% by weight of nitric acid, about 5% to 20% by weight of acetic acid, about 0.5% to about 1% by weight of phosphate, and about 〇1% by weight Up to 5% of the chlorine-containing compound, about 1% to 4% by weight of the azole compound and water. 14. The method for forming a metal pattern according to claim 13, wherein the metal layer comprises a 单/铭钱(M〇/AiNd) layer (Mo) single layer and indium tin oxide (ιτ〇) One of the single layers. One 28