TWI290505B - Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method - Google Patents

Abstract

A chemical mechanical polishing pad having a polishing surface with an arithmetic mean roughness (Ra) of 0.1 to 15 mum, a 10 point height (Rz) of 40 to 150 mum, a core roughness depth (Rk) of 12 to 50 mum and a reduced peak height (Rpk) of 7 to 40 mum, a manufacturing process thereof and a chemical mechanical polishing method. Even when the chemical mechanical polishing of a large-diameter wafer as an object to be polished is carried out by this pad, a polished surface having excellent in-plane uniformity and flatness can be formed.

Description

1290505 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a chemical mechanical polishing pad, a method of manufacturing the same, and a chemical mechanical polishing method. « More specifically, it relates to a chemical mechanical polishing pad, its manufacturer's method and a chemical mechanical polishing method using the chemical mechanical polishing pad, which can provide excellent surface chemical mechanical polishing. One of the in-plane uniformity and flatness of the ground surface. • [Prior Art] In the method for manufacturing a semiconductor element, CMP (Chemical Mechanical Polishing) is employed as a technique capable of supplying a flat surface to a wafer. The CMP technique is performed by allowing a chemical mechanical polishing slurry as an aqueous dispersion of abrasive particles to flow down on the surface of a chemical mechanical polishing pad while pressing the surface to be ground against the surface of the chemical mechanical polishing pad and allowing the surface to be ground. Sliding contact with the surface of the chemical mechanical polishing pad to chemically grind a surface. It is known that the performance characteristics and characteristics of the chemical mechanical polishing pad in this CMP have a great influence on the polishing result.

Known chemical mechanical polishing pads include, for example, a pad comprising a relatively porous polyurethane foaming resin and a pad comprising a relatively large amount of water-soluble fine particles dispersed in a non-foamed matrix (the former is disclosed in Jp_A).

And JP_A 8-216029, the latter being disclosed in jp_A 2000_34416, JP_A 2000-33552, and JP-A 2001-334455) (The term "JP·A" as used herein means "unaudited and published patent" Application"). Because of the need to increase productivity in the methods used to fabricate semiconductors, the diameter of wafers requiring chemical mechanical polishing is becoming larger as 101279.doc • 6 - 1290505. When chemical mechanical polishing is performed on a large diameter wafer by a conventionally known method, the in-plane uniformity and flatness of the ground surface after chemical mechanical polishing may become unsatisfactory. SUMMARY OF THE INVENTION In view of the above problems, it is an object of the present invention to provide a chemical mechanical polishing pad, a method of manufacturing the same, and a chemical mechanical polishing method for chemical mechanical polishing on a large-diameter wafer as a workpiece to be polished. It is also possible to provide a surface 0 which has excellent in-plane uniformity and flatness. The other objects and advantages of the present invention will become apparent from the following description. According to the present invention, first of all, the above objects and advantages of the present invention are achieved by a chemical mechanical polishing pad having an abrasive surface and a non-abrasive surface. The arithmetic mean roughness (Ra) of the abrasive surface is 0.1 to 15 μm. The 10-point facet (Rz) is 40 to 150 μηι, the core roughness depth (Rk) is 12 to 50 μηι ' and the reduced peak height (Rpk# 7 to 4 〇. Second, the above objects and advantages of the present invention) By the method of manufacturing one of the above chemical mechanical polishing pads, comprising the steps of: molding an abrasive layer; and polishing at least the surface of the abrasive surface to be the abrasive layer. The object and the advantages are achieved by a chemical mechanical polishing method. The method comprises chemical mechanical polishing of a workpiece to be polished by the above chemical mechanical polishing pad. [Embodiment] 101279.doc 1290505 The chemical mechanical polishing pad of the present invention The arithmetic mean roughness (Ra) of the ground surface is 〇·1 to 15 μπι '10 points height (Rz) is 40 to 150 μηη, and the core thick chain depth (Rk) is 12 to 50 μm. The reduced peak height (Rpk) is 7 to 40 μπι. These values are defined as the average of the following values calculated from the thick chain profile obtained by measuring a plurality of measurement lines set on the surface of the pad. For example, the values can be calculated by one of the methods disclosed in the LM manual (analog version) version 3.62 from Mitani. If the X-axis system of the roughness profile of the evaluation length L is plotted as the roughness profile The average line is parallel to the direction, the y-axis is drawn as the longitudinal magnification direction of the roughness profile, and the measured roughness profile is expressed by the equation y=f(x), then the arithmetic mean roughness (Ra) A value is expressed by the following equation (1). (ο If the X-axis system of the roughness profile of the evaluation length L is drawn in a direction parallel to the average line of the roughness profile, the y-axis system is drawn as the roughness profile. When the longitudinal direction is enlarged, the top distance from the highest peak to the fifth peak in the longitudinal enlargement direction is represented by ^ to !^, and the lowest from the average line is represented by ¥1 to ¥5. The bottom distance from the valley to the fifth trough (see The 10 point height (Rz) is represented by the following equation (2): (2) - i>, the core roughness depth (Rk) and the decreasing peak height (Rpk) are Evaluate a material ratio curve derived from the #slit profile derived length L. The material ratio curve represents a material ratio drawn as a horizontal axis by plotting a section plane (10) 丨(10)丨 as 101279.doc 1290505 longitudinal axis A curve is obtained. The term "cut surface" as used herein means a specific y when the roughness profile is expressed by the same equation y==f(x) as in the arithmetic mean roughness (Ra) described above. value. The term "material ratio" is a percentage of the length of a cut portion to the estimated length L when the thick chain profile is cut at a particular cut surface. The material ratio is 0% when the cut surface is at the top of the highest peak in the roughness profile and 100% when the cut surface is at the bottom of the lowest valley (see Figure 2). If the difference between the material ratios between the two points and the special point is set to 4% on the material ratio curve defined as described above, and the difference between the cut surfaces between the two points is the smallest, And point C is a point connecting the points A, B and extending one line in two directions with a line representing a material ratio of 0%' and the point D is a line connecting the points A, B and the representation 1 The intersection between the lines of one of the material ratios of 〇〇% (see Figure 3), then the core roughness depth (Rk) is the difference between the tangent planes between points C and D. If the intersection between the cross-section of the point c in the definition of the core nick depth (Rk) and the material ratio curve is a point Η, the intersection between the material ratio curve and the line representing the material ratio of 0% The point is point I, and a point J is set on a straight line indicating the material ratio of 〇〇/〇 to ensure that the area surrounded by the line segment CH, the line segment CI, and the curve HI becomes equal to the area of the triangle CHJ (see the figure). 4. A1 in Fig. 4 is the line segment CH, the line segment CI and the region surrounded by the curve HI, that is, the region of the triangle CHJ), and the reduced peak height (Rpk) is the point C and The difference between the cut planes between J. As described below, a plurality of measurement lines for measuring the above arithmetic mean roughness (Ra), 1 〇 point 101279.doc 1290505 height (Rz), core roughness depth (Rk), and decreasing peak height (Rpk) are set. On the mat. First, the center points of the plurality of measurement lines are set as follows. For the center point of the dedicated line, the virtual line from the arbitrary point at one end of the grinding surface of the crucible to the other point becomes the longest virtual line (when the grinding surface of the mat is circular, the virtual line becomes a diameter of a circle forming the surface of the pad) so as to be set to 5 〇 dots on the virtual straight line at substantially equal intervals 'but the imaginary straight line length is from the center to a 5% region of the two sides and the virtual straight line length Except for the 5% area from these two ends. The number of center points of the measurement lines is preferably 25 to 50. One (or more) grooves may be formed in the abrasive surface of the CMP pad of the present invention, as will be explained below. In this case, the center points of the measurement lines should be set such that all of the measurement lines set as described below are present in the polishing surface in a portion other than the (equal) groove. The 1 〇 to 5 测量 measurement points are not necessarily set on the virtual straight line at substantially equal intervals depending on the shape of the grooves formed in the polishing surface. In this case, the number of dots described above can be determined by excluding the points at which the measurement lines partially overlap the groove portions at respective points set at equal intervals. A line that intersects the virtual lines and sets the plurality of points and passes through the "middle-point" of the measurement lines is assumed to be a measurement line. The length of the measuring lines can be 1 to 15 mm ′ for the month b and centered on the center point of the above measuring line. The above roughness profile can be measured by using a commercially available surface roughness meter. The tooth of the chemical mechanical polishing pad of the present invention, and the average roughness (Ra) of the surface of the grinding table 101279.doc 1290505 thus measured is from 0.1 to 15 μm. This value is preferably from 1 to 12 μιη. The 1 point south (Rz) is 40 to 150 μm. It is preferably from 4 to 130 μm. The core thick chain depth (Rk) is 12 to 50 μηη. It is preferably 12 to 45 μπχ. The reduced peak intensity (Rpk) is 7 to 40 μηη. It is preferably 7 to 3 Ο μπι. When the chemical mechanical polishing step is carried out using a chemical mechanical polishing crucible having such values, an abrasive surface having excellent in-plane uniformity and flatness can be obtained. This effect is especially noticeable for chemical mechanical polishing of large diameter wafers. The thickness distribution of the chemical mechanical polishing pad of the present invention is preferably 5 〇 ^ ❿ or less. The advantageous effects of the present invention are exhibited by setting the thickness distribution of the chemical mechanical polishing pad to 5 〇 melon or less. This value is preferably 4 或 or less, and particularly preferably 30 μm or less. By setting the thickness distribution of the chemical mechanical polishing crucible to this range, even in the case of chemical mechanical polishing of a large-diameter wafer as a workpiece to be polished, excellent in-plane uniformity and flatness can be obtained. One of the ground surfaces. By measuring the thickness at a plurality of measurement points set on the surface of the crucible, the thickness distribution can be calculated according to the following equation. Thickness distribution = (maximum thickness measurement) 1 (minimum thickness measurement). a virtual straight line which is formed from an arbitrary point at one end of the grinding surface of the crucible to another point and whose length thus becomes the largest (when the grinding surface of the mat is circular, the virtual straight line becomes the surface forming the mat 10 to 50 measuring points are set at equal intervals on the diameter of a circle, but the length of the virtual straight line is from the center to one of the two sides of the 5% area and the length of the virtual straight line is from two 101279.doc • 11 - 1290505 i^ Except for the 5% area. The number of measurement points is preferably from 25 to 50.

A (or evening) groove may be formed in the abrasive surface of the CMP pad of the present invention, as will be explained below. In this case, the measurement points should be set in the portion of the grinding surface other than the (etc.) groove. In some cases, 10 to 50 measurement points are not necessarily set on the virtual straight line at substantially equal intervals depending on the shape of the grooves formed in the polishing surface. In this case, the number of the above-mentioned measurement points can be determined by excluding the points in the (etc.) grooves at points set at substantially equal intervals. The thickness at each measurement point can be known by placing the chemical mechanical polishing pad on a horizontal plane and measuring the distance between the measurement point and the horizontal plane. A contact type distance gauge can be used to measure the distance between the measurement point and the horizontal plane. - The above-mentioned meter product series available for purchase

Manual 3-D meter (Mitutoyo). The shape of the chemical mechanical polishing of the present invention is not particularly limited. The fish can be in the form of a disc, a belt or a drum. Preferably, the shape of the chemical mechanical polishing pad is appropriately selected in accordance with a grinding. The chemical mechanical research (4) before use, the size is not subject to a specific limitation. The diameter of a disc-shaped chemical mechanical polishing crucible is 'for example, 〇.5 to _(10)', the preferred one is i.〇 to 250 em, and the better is torn. Pulse m. The thickness is, for example, greater than... and less than ι (mm' is particularly preferred from 1 to 1 mm. The chemical mechanical polishing of the present invention may be -/, in the abrasive surface:: multiple: Any groove or dent portion of any shape. The groove or dent is used to hold an eight π(tetra)__ for chemical mechanical polishing, and this aqueous dispersion is two == 101279.doc •12 · 1290505 Abrasive surface of abrasive articles, and (4) scraps such as wafers and grinding liquid waste temporarily produced by chemical mechanical grinding and become a route for discharging waste to the outside. The shape of the above grooves is not particularly limited, and may be circular, square or radial. The shape of the above-mentioned dimple portion is circular or polygonal. The segment form of the (or the like) groove or the indent portion is not particularly limited. It may be, for example, 'rectangular, trapezoidal, u-shaped or v-shaped. ^ The number of such grooves or such indented portions may be one or more. The size of the (or the like) groove or the dent portion is not particularly limited. The width of the groove or the shortest diameter of the (etc.) dimple portion may be, for example, 〇.丨mm or larger, specifically 〇·1 to 〇·5 mm, more specifically the system 2 to 3 〇mm. The width of the (or other) groove or the depth of the (etc.) dent portion may be, for example, < 〇·1 mm or more, specifically (1) 丨 to], and more specifically 0.2 to 2.0 mm. The surface roughness of the inner wall of the groove or the indented portion is preferably 2 〇 μΠ 1 or less, and more preferably 15 μm or less. By setting the width of the groove or the surface roughness of the inner wall of the indented portion to this range, when the chemical mechanical polishing is performed by the pad, the ground surface of the object can be prevented. It is scratched and helps to increase the grinding speed and the service life of the polishing pad. The polishing rate is improved by setting the surface roughness of the inner wall of the groove or the indented portion to this range, which is assumed to be due to better implementation of a chemical mechanical polishing. The aqueous dispersion functions as a distributed surface. By setting the surface roughness of the inner wall of the groove or the dent portion to this range, the service life of the polishing pad is increased by 101279.doc -13-l29〇5〇5 high'. In order to better implement the function of discharging waste generated by chemical mechanical grinding. The above surface roughness can be measured by a surface roughness optical meter or a surface roughness contact type meter. Examples of the above surface roughness optical meter include a 3-D surface structure analysis microscope, a scanning laser microscope, and an electron beam surface format analyzer. An example of the above contact type surface roughness meter includes a tracer type surface roughness meter.

The CMP pad of the present invention may further have one (or more) grooves or dent portions on the non-abrasive surface (the back side of the pad). The (or the like) groove or indentation portion helps to suppress the occurrence of surface defects on the abrasive surface in the chemical mechanical polishing step. It is assumed that even if foreign substances such as coarse particles (which may be contained in an aqueous dispersion for mechanical polishing or in a dicing wafer produced by the chemical mechanical polishing manufacturing process) enter the polishing The portion of the indentation between the pad and the article to be abraded can also be used to relieve excessive pressure generated locally to reduce the number of surface defects on the surface being abraded. The shape of the above groove or dent portion is not particularly limited. The shape of the (etc.) groove may be spiral, circular or square. The shape of the (etc.) (4) portion may be circular or polygonal. The (or other) groove or dent portion can be arbitrarily smashed from the 丨 了. When the (etc.) dent 4 knife is round, its diameter may be injured.

The lunar system is 1 to 300 mm, which is clearly 5 to 2 cm, and more specifically 1 to 15 mm. When the (equal) grooved spiral coat "checkered shape, its width may be 〇ι to 2〇, clearly stated. 1 to 1 〇. The depth of the (or other) groove or dent portion may be, for example, female 101279.doc -14- 1290505 0·01 to 2.0 mm, specifically ol to 1.5 mm, more specifically 〇·ι to 1 · 0 mm ' regardless of its shape. The number of recessed or indented portions may be one or more. The CMP pad of the present invention has a thickness distribution of 50 μηχ or less as described above, and optionally has one (or more) grooves or dent portions in the abrasive surface and/or the non-abrasive surface. Although the method for manufacturing the mat is not particularly limited, the mat may be fabricated by, for example, one of the following steps. (1) a step of preparing a composition for a chemical mechanical polishing pad; (2) a step of molding the above composition for a chemical mechanical polishing pad into a polishing layer; and (3) at least the above-mentioned polishing layer The step of polishing the surface. Each of the above steps will be described in detail later. (1) Step of preparing a composition for a chemical mechanical polishing pad The chemical mechanical polishing pad of the present invention can be made of any material as long as the object of the present invention can be achieved. Preferably, the pores are formed before the start of the grinding, the pores having the following two functions: holding an aqueous dispersion for chemical mechanical polishing during chemical mechanical polishing; and allowing the abrasive wafer to be temporarily protected from the chemical mechanical The effect of the polishing pad function. Accordingly, the CMP pad is preferably made of a material consisting of water-soluble particles and a water-insoluble matrix comprising water-soluble particles dispersed in the towel; or 'by a plurality of pockets A material comprising a water-insoluble base material comprising a plurality of pockets dispersed therein, for example, a foamed plastic. In the bismuth material, the water-soluble particles are contacted with 101279.doc -15-12090505 during grinding, containing an aqueous medium and a solid aqueous slurry medium, and dissolved or expanded to be eliminated. It may be held in a porous body formed by elimination. In the latter material, the slurry can be held within the pores formed into the pockets. The material of the above "non-aqueous matrix" is not particularly limited, but is preferably an organic material because the organic material is easily molded to have a predetermined shape and predetermined characteristics and can provide a suitable hardness and a suitable elasticity. Examples of the organic material include thermoplastic resins, elastomers, rubbers (e.g., crosslinked rubber), and curable resins (e.g., heat curable or photocurable resins and resins which are cured by heat or light). They may be used singly or in combination. In the material examples, the above thermoplastic resin includes ruthenium, 2-polybutylene resin, polyolefin resin (for example, polyethylene, polystyrene resin), polyacrylic resin (for example, mainly acrylic acid). Resin), vinyl ester resin (except acrylic resin), polyester resin, polyamide resin, fluororesin (for example, polyvinylidene fluoride), polycarbonate resin, and polyacetal resin. The above elastomers include: diene elastomers (for example, 12-polybutadiene, polyolefin elastomer (TPO)), styrene-based elastomers (for example, styrene-butadiene-phenethyl hydrazine) Block copolymers and their hydrogenated block copolymers) (SEBS), thermoplastic polyurethane elastomers (TPU), thermoplastic elastomers (eg, polyester elastomers (TPEE) and polyamide elastomers (TPAE) ), a polyoxyxene elastomer and a fluororesin elastomer. The rubbers include: conjugated diene rubbers such as butadiene rubber (high butadiene rubber, low butadiene rubber, etc.), isoprene rubber, styrene-butadiene rubber, and styrene-isoprene. Rubber, nitrile rubber (eg acrylonitrile-butadiene rubber), acrylic rubber, 101279.doc -16 - 1290505 vinyl-α-olefin rubber (for example, ethylene-propylene rubber and ethylene-propylene-diene rubber), And other rubbers (for example, butyl rubber, polyoxyethylene rubber and fluororubber). The above curable resin includes a urethane resin, an epoxy resin, an acrylic resin, an unsaturated polyester resin, a polyurethane urea resin, a urea resin, an anthracene resin, a phenol resin, and a vinyl ester resin. The above organic material may be modified by an anhydride group, a carboxyl group, a hydroxyl group, an epoxy group or an amino group. The affinity of the water-soluble particles and the organic material slurry to be described below can be adjusted by modification. These organic materials may be used singly or in combination of two or more of them. Further, the organic material may be a partially or wholly crosslinked polymer or a non-crosslinked polymer. Therefore, the water-insoluble substrate may be composed of a cross-linked polymer alone, or a mixture of a cross-linked polymer and a non-cross-linked polymer, or a single non-cross-linked polymer. It preferably consists of a crosslinked polymer alone or a mixture of a crosslinked polymer and a non-crosslinked polymer. When a crosslinked polymer is obtained, an elastic restoring force is supplied to the water-soluble matrix, and displacement due to shear stress applied to the CMP pad during grinding can be reduced. Further, it is possible to effectively prevent the porous from being plastically deformed due to excessive elongation of the water-insoluble substrate during grinding and surface finishing, and to effectively prevent excessive surface fuzzing of the surface of the chemical mechanical polishing pad. Therefore, even when the surface is trimmed, the pores are formed efficiently, so that the retentivity of the slurry during the grinding can be suppressed, and the mat is further made to be less fluffy, so that the wafer is not damaged. 1290505 Grinding flatness The crosslinking method of the above materials is not particularly limited. For example, crosslinking methods which can be employed are chemical crosslinking of n organic hydrogen peroxide, sulfur or sulfur-reducing compounds or radiation crosslinking by application-electron beam. The crosslinked polymer may be a crosslinked rubber, a curable resin, a crosslinked thermosetting tree, or a crosslinked elastomer derived from the above organic materials. Among them, a crosslinked thermoplastic resin and/or a crosslinked elastomer are preferred because they are stable and rarely stable for many types of pulp towels.

Softened by water absorption. Among the crosslinked thermoplastic resins and crosslinked elastomers, it is more preferred to crosslink with an organic hydrogen peroxide, and particularly preferably a crosslinked L2-polybutadiene. The content of the crosslinked polymer is not particularly limited, but is preferably 30% or more by volume, more preferably 50% or more by volume, particularly preferably 70% by volume, and may be 1% by volume of the water-insoluble substrate. When the content of the crosslinked polymer in the water-insoluble matrix is less than 3 % by volume, the effect obtained by including the parent polymer may not be fully realized. * When one of the above samples of the water-insoluble matrix comprising a crosslinked polymer is broken at 80 ° C according to JIS K 6251, the residual elongation after the breakage of the water-insoluble matrix (abbreviated as "residual elongation after fracture") may be 1% or less. That is, the total distance between the reference points of the sample after the fracture becomes twice or less the distance between the reference points before the fracture. The residual elongation after the breaking is preferably 30% or less, more preferably 1% by weight or less, particularly preferably 5% or less and generally 0% or more. When the residual elongation after the above fracture is higher than 1%, the fines scraped off from the surface of the chemical mechanical polishing pad or stretched during polishing and surface renewal tend to disadvantageously fill the pores. The "residual residual 101279.doc -18 - 1290505 elongation" as an elongation is obtained by breaking from each m攸I rate point and a tensile test and dividing the sample. Before the total distance minus the test

According to the (4) distance of each reference point, in the tensile test, according to the "Vulcanized Rubber Tensile Test Method" of the mosquito in JIS K 6251, the tensile test speed of the No. 3 reading sample at 50 () mm/min and the test temperature of (4) Break down. This test is carried out because heat is generated by sliding contact during actual grinding.

The above "water-soluble particles" are particles which are eliminated from the water-insoluble group f when they are brought into contact with the raw material in the chemical mechanical polishing crucible as an aqueous dispersion. This elimination can occur when the particles are dissolved in the water contained in the slurry upon contact with water or when the particles swell and gel due to absorption of the moisture. Further, this dissolution or expansion is caused not only by its contact with water, but also by its contact with an aqueous mixed medium containing an ethanol-based solvent such as 'methanol. The special water; in addition to the effect of forming a porous layer, the granulated particles also have an effect of increasing the hardness of the dent of the chemical mechanical polishing pad. For example, the Shore Dhardness of the CMP pad of the present invention can be set by adding the water-soluble particles, preferably 35 or more, more preferably 50 to 9 Torr, and particularly preferably It is 60 to 85 and is generally 100 or less. When the Shore hardness is 35 or more, the pressure applied to the article to be ground may increase, and the polishing speed may be increased accordingly. In addition, higher grinding flatness is obtained. Therefore, the water-soluble particles are particularly preferably made of a solid material which ensures that the chemical mechanical polishing pad has a sufficiently high dent hardness. 101279.doc -19- 1290505 The materials of the water-soluble particles are not particularly limited. The system is, for example, organic water-soluble particles or inorganic water-soluble particles. Examples of such organic water-soluble f-particles include: sugars (polysaccharides such as starch, dextrin and cyclodextrin, sugar, mannitol, etc.), cellulose (for example, hydroxypropylcellulose, A) Cellulose, etc.), protein, polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic acid, polyethylene oxide, water-soluble photosensitive resin, polycondensed polyisoprene: alkene and feldsparic polyocta-dilute copolymer. Examples of the material for forming the inorganic water-soluble particles include potassium acetate, potassium nitrate, potassium carbonate, potassium hydrogencarbonate, potassium vapor, potassium bromide, potassium phosphate, and magnesium nitrate. These water-soluble particles may be used singly or in combination of one or more types of particles. The water-soluble particles may be made of a single material of a pre-twisted or made of two or more different materials. " The average particle size of the water-soluble particles is preferably from 0 1 to 5 μ μm, more preferably from 0.5 to 100 μηη. The holes are larger, and the preferred ones are 1 to 5 inches, more preferably 0.5 to 1 μm. When the average particle diameter of the water-soluble particles is less than 〇·1 μηι, the size of the porous layer becomes smaller than the abrasive grains used, and the smoldering hardly obtains one chemical mechanical machine capable of completely holding the slurry. Grinding pad. When the average particle diameter is larger than μηη, the formed porosity becomes excessively large, so that the mechanical strength and the polishing speed of the obtained chemical mechanical polishing pad may be lowered. The content of the water-soluble particles is preferably from 1 to 9% by volume, more preferably from 1 to 60% by volume of the system, based on the total volume of the water-soluble substrate and the water-soluble particles. Particularly preferred is 2 to 4% by volume of the system. When the content of the water-soluble particles is less than 1% by volume, the obtained chemical mechanical film 101279.doc -20 - 1290505 is not completely formed in the polishing pad, and the polishing speed may be lowered. When the content of the water-soluble particles is more than 9% by volume, it may be difficult to completely prevent the water-soluble particles present inside the obtained chemical mechanical polishing pad from swelling or dissolving, thereby making it difficult to obtain the obtained chemical mechanical polishing pad. The hardness and mechanical strength are maintained at appropriate values. Preferably, the water-soluble particles should be dissolved in water only when they are exposed to the surface layer of the chemical mechanical polishing pad, and should not absorb moisture when they are present in the interior of the chemical mechanical polishing pad or Swell. Thus, the water; gluten particles may have an outer shell to inhibit moisture absorption on at least a portion of its outermost portion. The shell may be physically adsorbed to the water soluble particles, chemically bonded to the water soluble particles, or contacted with the water soluble particles by physical adsorption and chemical bonding. The outer casing is made of epoxy resin, polyimide, polyamide or polysilicate. Even if it is formed only on the portion of the water-soluble particles, the above effects can be sufficiently obtained. The water-insoluble substrate may comprise a compatibilizing agent to control its affinity for the water-soluble particles and the dispersibility of the water-soluble particles in the water-insoluble substrate. Examples of the compatibilizing agent include: a homopolymer, a bulk copolymer, and a random copolymer modified with a monoanhydride group, a carboxyl group, a hydrogen group, a % oxygen group, an oxazoline group or an amino group, Nonionic surfactants and light combination agents. The chemical mechanical polishing pad comprises the above-mentioned non-water-soluble matrix material (foamed plastic or the like) (which contains a cavity dispersed therein), and a water-insoluble matrix material system constituting the chemical mechanical polishing pad, for example, a polyamine Carbamate, melamine resin, polyester, polyfluorene or polyethylene ethyl ester. 101279.doc -21 - 1290505 The average size of the cavities dispersed in the water-insoluble matrix material is preferably from 0.1 to 500 pm, more preferably in the case of - for example, the chemical mechanical polishing crucible comprises a non-water soluble solution. |±The matrix material (the material contains the recesses dispersed therein), the foamed plastic does not meet the arithmetic mean roughness (4), 1〇 point height (RZ), core roughness depth of the surface of the mat ( Rk) and reduced peak height (Rpk) requirements. Depending on the size of the pockets, the chemical mechanical polishing crucible of the present invention should meet these requirements. Accordingly, the preferred embodiment of the chemical mechanical polishing crucible of the present invention is an abrasive layer made of a material consisting of water-soluble particles and a water-insoluble group f (the base f contains water-soluble particles dispersed therein). The method of obtaining the composition of the chemical mechanical research (4) from the above-mentioned material towel is not particularly limited. For example, the composition can be obtained by kneading a desired material including a predetermined organic material by a kneading machine. A conventionally known kneading machine such as a drum, a kneader, a Banbury mixer or an extruder (single-screw multi-screw) can be used. A composition for a chemical mechanical polishing pad comprising water-soluble particles (and thereby obtaining a chemical mechanical polishing pad comprising water-soluble particles) can be kneaded by, for example, a water-insoluble substrate, water-soluble particles, and other additives. Get together. Generally, they are kneaded together under heat, so that they are easily handled at the time of kneading, and the water-soluble particles are preferably solid at the kneading temperature. When it is a solid, it can be dispersed in the above preferred average particle size irrespective of its compatibility with the water-insoluble substrate. Therefore, in this case, it is preferred to select the type of the water-soluble particles depending on the treatment temperature of the water-insoluble base used. 101279.doc -22- 1290505 (2) Step of molding an abrasive layer from a composition for a chemical mechanical polishing pad A method of forming an abrasive layer which can be a chemical mechanical polishing pad of the present invention is not particularly limited. For example, a composition for a chemical mechanical polishing pad to be an abrasive layer is prepared and molded into a desired form of raw sugar to produce the abrasive layer. At this point, a composition for a chemical mechanical polishing pad is molded using a metal mold having a pattern which should be one (or more) grooves to be formed on the front and/or back surfaces of the polishing layer. The grooves and/or indentations are such that the (and the like) grooves and/or indentations can be formed simultaneously with the roughened form of the abrasive layer. The grooves and/or indentations are formed by molding. In the meantime, this step can be simplified, and the surface roughness of the inner wall of the groove and/or the indented portion can be easily formed to be 2 μm or less. After forming an abrasive layer without any such grooves and/or indentations, grooves and/or depressions may be formed on the front and/or back surfaces of the abrasive layer by cutting or countersinking. Trace part. To form the (and other) grooves and/or indentations by cutting or countersinking, the formation of the (and other) grooves may be performed before or after (3) the buffing step (which will be described next) / or the step of the dent portion. (3) a step of polishing at least the abrasive surface of the above-mentioned abrasive layer. Subsequently, at least the polished surface of the thus formed abrasive layer is polished. The term "polish" means grinding with sandpaper. The sandpaper is obtained by bonding abrasive particles to a substrate (e.g., a sheet or belt-like paper or cloth) with a binder. The materials of the abrasive grains are fine crystals of natural minerals or fine particles of one-man inorganic compound. Examples of such natural minerals include King Kong 101279.doc -23- 1290505 sand and stone fossils, and examples of such artificial inorganic compounds include alumina and tantalum carbide. The size of the abrasive particles used in the above polishing step is preferably from 20 to 200, more preferably from 25 to 150 μm. The grit of the sandpaper preferably has a size of from 8 600 to 600 Å and more preferably from 120 to 400. For buffing, it is preferred to use a sandpaper having a width wider than that of the above-mentioned abrasive layer. By fixing the above-mentioned abrasive layer on a horizontal plane with the abrasive surface facing up, the entire abrasive surface is brought into contact with the sandpaper and the sandpaper is preferably 〇] to 1 μm relative to the abrasive surface. /min and a better system 〇. 5 to 5 〇 m / min relative speed movement to perform polishing. This movement may be a rotational motion or a linear motion, with a portion between the abrasive surface of the abrasive layer and the sandpaper as a standard. The amount of abrasive layer that is worn away (ie, removed by buffing) is preferably 〇·〇5 to 3.0 mm. The better system (^ to) mm ° can be borrowed from a single type of sandpaper or borrowed Polishing is carried out by different types of sandpaper having different grit sizes in a plurality of stages. Among them, it is preferred to perform buffing by different types of sandpaper having different grit sizes at various stages. Preferably, the system is from 2 to 10, more preferably from 3 to 6. The thickness of the abrasive layer which is ground off (i.e., removed by buffing) is preferably from 1 to 15 mm, more preferably from 0.1 to 1. 1 · 〇mm. When polishing is carried out by different types of sandpaper with different grit sizes in multiple stages, it is preferred to first use a sandpaper with a larger size of the sand butterfly, and then use a smaller grit size. A wonderful paper. You can use a sand blasting device, a belt grinding machine, a roller grinding machine, an expansion grinding machine 101279.doc -24-1290505 grinding machine, sand ring grinding machine, electrolytic grinding machine or electrolysis and particle grinding machine. A good belt grinding machine is used. The available belt grinding machine products include: TS13 of Amitec Co., Ltd. 0D grinder, T-142DG wide belt sander from Kikukawa Tekkosho Co., Ltd. and wide belt sander from Meinan Machinery Works. By performing this buffing, it is easy to obtain a thickness distribution of 50 μm or less and have a grind The chemical mechanical polishing pad of the surface has an arithmetic mean roughness (Ra) of 0.1 to 15 μm, a height of 10 points (rz) of 4 to 15 μm, and a core roughness depth (Rk) of 12 to 50 μηχ. And the reduced peak height (Rpk) is 7 to 40 μηη. Subsequently, the chemical mechanical polishing method of the present invention will be described. The chemical mechanical polishing method of the present invention is basically the same as the known chemical mechanical polishing method, and the difference is only The above-described chemical mechanical polishing pad of the present invention is placed in a commercially available grinding machine. The type of the surface to be ground is not particularly limited, but a metal film, a barrier metal film or an insulating film of the wire material may be used. Examples of the material of the metal film include tungsten, aluminum, copper, and an alloy containing at least one of the metals. Examples of the material of the barrier metal film include a button, titanium, Nitride button and nitride. Examples of the material of the insulating film include oxygen cutting. The type of aqueous dispersion for chemical mechanical polishing should be appropriately selected depending on the type of surface to be polished and the purpose of chemical mechanical polishing. The article polished by the chemical mechanical polishing method of the present invention is preferably a semiconductor wafer having at least one of the above materials on the surface to be polished. Although the semiconductor wafer may be of any size, it is for a large straight 101279. The chemical mechanical polishing method of the present invention exhibits significant advantages in the chemical mechanical polishing of semiconductor wafers of the diameter of doc - 25 - 1290505. The large diameter semiconductor wafer represents a semiconductor wafer having a diameter greater than 8 inches and preferably one inch or more. As described above, the chemical mechanical polishing pad of the present invention has an advantage in that the stability of the polishing of a wafer is increased by setting the surface roughness of the pad to a specific range. That is, for a conventionally known polishing pad, it is necessary to surface trim the fracture before placing a new pad in the grinder to grind a wafer. By setting the surface roughness described above, the first wafer can be removed from the first wafer after the pad is placed in the grinder without performing a surface modification of the fracture or only performing a fracture surface modification having a shorter time period than in the prior art. Achieve stable grinding performance. According to the present invention, there is provided a chemical mechanical polishing pad, a method of manufacturing the same, and a chemical mechanical polishing method, which can provide a pole even when chemical mechanical polishing is performed on a large-diameter wafer as a workpiece to be polished. Good surface roughness and flatness of the ground surface. EXAMPLES Example 1 A volume of polybutadiene (JSR RB830 of JSR) and a β-cyclodextrin of 2 〇/〇 (Dexy of Yokohama Bio Research Co., Ltd.) were heated by an extruder heated at 155 °C. Pearl (p_i00 is kneaded together as a water-soluble substance. Then, based on the mass of 1,2-polybutadiene, the amount of 1,0 parts is added according to the mass 1 (equal to the mass based on 0· 4 parts of pure dicumyl peroxide, Percumyl D40 (trade name, manufactured by NOF, containing 40% by weight of dicumyl peroxide), and added 101279.doc - 26 - 1290505

Percumyl D40 was further kneaded with the above kneaded product, and the resulting product was crosslinked in a stamper at 170 cc for 18 minutes to obtain a disc-like product having a diameter of 810 cm and a thickness of 3·3 mm. The molded product was placed in an insertion portion of a wide belt sanding device (Meinan Machinery Works), and the molded product was moved at a speed of 0.1 m/sec by rotating a roller at 500 rpm. Sandpaper having a grit size of 120, 150, 220, and 320 (Novatec Co., Ltd.) was used to polish the surface of the molded product, thereby removing 0.04 mm from the surface in one step. As a result, a molded product having an average thickness of 2.5 mm, a thickness distribution of 20 μηι, an arithmetic mean coarse rotation (Ra) of 4·4 μπι, a 10-point degree (Rz) of 125 μηι, and a core roughness was obtained. The depth (Rk) is 16 μm and the reduced peak height (Rpk) is 14 μηι. For the above buffing, the relative speed between the molded product and the sandpaper, which is on the contact surface between the molded product and the sandpaper, was 5 m/min. Equidistant from each other in the diametrical direction by the Manual 3_D meter (Mitutoyo Corporation) (but from the center to the 4 〇 min area of the two sides and the 40 mm area from the two sides) The thickness of the polished surface of the molded product measured at 33 points is calculated according to the following equation: 0 thickness distribution = (maximum thickness measurement value) 1 (minimum thickness measurement value) The arithmetic mean roughness (Ra ), 10 point height (Rz), core roughness depth (Rk), and reduced peak height (Rpk) are average values calculated from the roughness profile by using Laser Tech 1LM21P and measuring 10 measuring points perpendicular to the diameter direction of the pad in the diameter direction of the grinding surface of the molded product 101279.doc -27- 1290505 (evaluation length 10 mm) (However, except for the 4〇mm area from the two ends of the center). A concentric groove having a width of 〇.5 111111, a pitch of 2111111 and a depth of 1〇111111 is formed in the polished surface of the molded product by a cutter (Kato Machinery Co., Ltd.) to manufacture a chemical machine Grinding pad. The inner wall of the grooves has a surface roughness of 6 μm. The chemical mechanical polishing was placed in an Applied Reflexion chemical mechanical mill manufactured by Applied Material Co., Ltd. to perform surface modification of the fracture while providing deionized water under the following conditions. Platform speed: 120 rpm Deionized water supply speed: l〇〇ml/min Grinding time: 600 seconds and then 'chemical mechanically on a 12-inch wafer with one PETEOS film as the object to be polished under the following conditions Grinding. The PETEOS film is a ruthenium oxide film formed from tetraethyl phthalate (TEOS) by a chemical vapor deposition method and using the plasma as a promoting condition. Platform speed: 120 rpm Grinding head speed · · 36 rpm Grinding dust force: Positioning ring pressure = 7.5 psi Zone 1 dust force = 6.0 psi Zone 2 pressure = 3.0 pSi Zone 3 pressure = 3.5 psi Aqueous dispersion supply speed ··3〇〇ml/min 101279.doc -28 - 1290505 Grinding time: 60 seconds for aqueous dispersion for chemical mechanical polishing · CMS1101 (JSR Corporation) 12-inch crystal with a PETEOS film as the object to be polished In the direction of direct control of the circle (except for the 5 mm region from the two ends), the thickness of the PETEOS film before or after chemical mechanical polishing was measured at 33 points equidistant from each other. The polishing speed and the in-plane uniformity are calculated from the measurements according to the following equation. Grinding quantity = thickness before grinding _ thickness after grinding = grinding speed (number of grinding) / grinding time in-plane uniformity = (standard deviation of grinding quantity + average grinding quantity) Χ 100 (%) These results are shown in Table 1. . It can be said that the uniformity in the in-plane is satisfactory when the in-plane uniformity is 3% or less. Example 2 The average thickness is 2.5 mm, the thickness distribution is 20 μηι, the arithmetic mean roughness (Ra) is 3·4 μηι, the 10-point height (rz) is jog, the core coarse sugar depth (at the surface) is 18 μηι, and the peak is reduced. The molded product of one of the heights μηη is obtained in substantially the same manner as in the first example, except that 80% of the volume, 1, 2-polybutadiene, and 2% by volume of the cyclodextrin are used. And 8 parts by mass of Percumyl D40 (equal to 32 parts by mass of pure dicumyl peroxide) by mass of 1,2-polybutadiene. In the same manner as in Example 1, in the polished surface of the molded product, 101279.doc -29-1290505 has a visibility of 0.5 mm, a pitch of 2 mm, a depth of 1. 〇mm and a rough surface of the inner wall. A central groove of 5 μm is used to make a chemical mechanical polishing pad. The evaluation was carried out by using this chemical mechanical polishing pad in the same manner as in Example 1. These results are shown in Table 1. Example 3 The average thickness is 2.5 mm, the thickness distribution is 25 μηι, the arithmetic mean roughness (Ra) is 3.8 μπι, the 10-point height (rz) is 115 μηι, the core roughness depth (Rk) is 15 μπι, and the peak height is reduced. The method of obtaining a molded product of ten puncturing ^μπχ is basically the same as that in the first example, except that 64% of the volume of 1,2-polybutadiene and 16% of the volume of benzene are used. Ethylene-butadiene block copolymer (TR2827 from JSR Corporation) and 20% by volume of cyclodextrin. In the same manner as in Example 1, a width of 0 · 5 mm, a pitch of 2 mm, a depth of 1 · 〇 mm and a rough surface of the inner wall of 4·5 μπι were formed in the polished surface of the molded product. The same central groove to make a chemical mechanical polishing pad. The evaluation was carried out by using this chemical mechanical polishing pad in the same manner as in Example 1. These results are shown in Table 1. Comparative Example 1 has an average thickness of 2.5 mm, a thickness distribution of 70 μηι, an arithmetic mean roughness (Ra) of 1.5 μπι, a 10-point height (rz) of 25 μπι, a core thick chain depth (Rk) of 8 μπι and a decrease. A molded product having a peak height (Rpk) of 6 μηη was obtained in substantially the same manner as in Example 1, except that a mold having an average thickness of 2.5 mm was used to obtain a molded product and was not polished. Molded product 0 101279.doc -30- 1290505 In the same manner as in Example 1, a surface having a width of 0.5 mm, a pitch of 2 mm, and a depth of ι·〇mm was formed in the ground surface of the molded product. The same center groove is used to make a chemical mechanical polishing pad with a roughness of 5·5 μηι. The evaluation was carried out by using this chemical mechanical polishing pad in the same manner as in Example 1. These results are shown in Table 1. Table 1 Grinding speed (A/min) In-plane uniformity (%) Example 1 2850 1.0 Example 2 2700 2.0 Example 3 2750 1.5 Comparative example 1 2800 8.0 Example 4

The chemical mechanical polishing of a 12-inch wafer having a -PETEOS film is carried out in substantially the same manner as in the elaboration' except that the fracture surface trimming is not performed. Chemical mechanical polishing was then continued on a difficult 12-inch wafer with a -PETE〇s film. Table 2 shows the grinding speed for each wafer. Comparative Example 2 ^ The method of chemical mechanical polishing on a rigid-solid wafer is basically the same as in Example 4 except that the chemical mechanical polishing crucible manufactured in the same manner as in Comparative Example 1 is used. Table 2 shows the grinding speed of each wafer: 101279.doc -31- 1290505 Table 2 Grinding sequence grinding speed of wafer (Λ/min) Example 4 Comparative example 2 1 2830 1830 2 2850 1850 3 2870 1910 4 2820 2100 5 2840 2510 6 2850 2840 7 2880 2860 8 2870 2870 9 2850 2840 10 2840 2830

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram showing the definition of a 10-point height (Rz); Figure 2 is a diagram showing a definition of a material ratio curve; Figure 3 is a definition showing the core roughness depth (Rk) One of the curves; and Figure 4 shows one of the definitions of the reduced peak height (Rpk). 101279.doc 32-

Claims (1)

1290505 X. Patent Application Range: i A chemical mechanical polishing having an abrasive surface and a non-abrasive surface. The abrasive surface has an arithmetic mean roughness (Ra) of 0.1 to 15 μηι and a 10-point height (Rz) of 40 to 150 μηι, core roughness depth (Rk) of 12 to 50 ' and reduced peak height (Rpk) of 7 to 40 μηι. 2. A chemical mechanical polishing pad according to claim 1, which has a thickness distribution of 5 〇 μη or less. A method of manufacturing a chemical mechanical polishing pad according to claim 1 or 2, comprising the steps of: molding an abrasive layer; and polishing the surface of the abrasive surface to be at least the abrasive layer. A chemical mechanical polishing method comprising chemical mechanical polishing of an article to be ground by a chemical mechanical polishing pad according to claim 1 or 2. 101279.doc