TWI289220B - Apparatus for and method of frequency conversion - Google Patents

Apparatus for and method of frequency conversion Download PDF

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Publication number
TWI289220B
TWI289220B TW093103972A TW93103972A TWI289220B TW I289220 B TWI289220 B TW I289220B TW 093103972 A TW093103972 A TW 093103972A TW 93103972 A TW93103972 A TW 93103972A TW I289220 B TWI289220 B TW I289220B
Authority
TW
Taiwan
Prior art keywords
light
layer
frequency
contact
doped
Prior art date
Application number
TW093103972A
Other languages
English (en)
Chinese (zh)
Other versions
TW200424729A (en
Inventor
Nikolai Ledentsov
Vitaly Shchukin
Original Assignee
Pbc Lasers Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/367,824 external-priority patent/US6928099B2/en
Application filed by Pbc Lasers Ltd filed Critical Pbc Lasers Ltd
Publication of TW200424729A publication Critical patent/TW200424729A/zh
Application granted granted Critical
Publication of TWI289220B publication Critical patent/TWI289220B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
TW093103972A 2003-02-19 2004-02-18 Apparatus for and method of frequency conversion TWI289220B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/367,824 US6928099B2 (en) 2001-09-04 2003-02-19 Apparatus for and method of frequency conversion

Publications (2)

Publication Number Publication Date
TW200424729A TW200424729A (en) 2004-11-16
TWI289220B true TWI289220B (en) 2007-11-01

Family

ID=32907631

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093103972A TWI289220B (en) 2003-02-19 2004-02-18 Apparatus for and method of frequency conversion

Country Status (6)

Country Link
EP (1) EP1595316A4 (ko)
JP (1) JP2006518548A (ko)
KR (1) KR20050107439A (ko)
CN (1) CN1778022A (ko)
TW (1) TWI289220B (ko)
WO (1) WO2004075362A2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100668329B1 (ko) 2005-02-16 2007-01-12 삼성전자주식회사 변조기 내장형 광펌핑 반도체 레이저 장치
JP2007165562A (ja) 2005-12-13 2007-06-28 Seiko Epson Corp 光源装置、および光源装置を備えたプロジェクタ
US7660500B2 (en) 2007-05-22 2010-02-09 Epicrystals Oy Light emitting array
KR100864696B1 (ko) * 2008-03-03 2008-10-23 국방과학연구소 공간적 광 변조 레이저 신호발생장치
KR101053354B1 (ko) * 2008-10-21 2011-08-01 김정수 외부 공진기를 이용한 파장 변환형 반도체 레이저
CN101867148B (zh) * 2009-04-15 2012-05-23 中国科学院半导体研究所 带有光子晶体反射面和垂直出射面的fp腔激光器
CN103682952A (zh) * 2012-09-13 2014-03-26 福州高意通讯有限公司 具有输出光路标示的不可见光激光器及其标示方法
CN103427906B (zh) * 2013-08-16 2016-08-10 北京邮电大学 一种利用光子变频技术传输多业务信号的系统和方法
US9312662B1 (en) * 2014-09-30 2016-04-12 Lumentum Operations Llc Tunable laser source
CN113777857A (zh) * 2021-08-25 2021-12-10 成都理工大学 一种基于砷化铝镓的宽带倍频方法及系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063189A (en) * 1976-04-08 1977-12-13 Xerox Corporation Leaky wave diode laser
US5175741A (en) * 1989-06-07 1992-12-29 Fuji Photo Film Co., Ltd. Optical wavelength conversion method and laser-diode-pumped solid-state laser
US5321718A (en) * 1993-01-28 1994-06-14 Sdl, Inc. Frequency converted laser diode and lens system therefor
US6241720B1 (en) * 1995-02-04 2001-06-05 Spectra Physics, Inc. Diode pumped, multi axial mode intracavity doubled laser
JPH08213686A (ja) * 1994-11-14 1996-08-20 Mitsui Petrochem Ind Ltd 波長安定化光源
US5912910A (en) * 1996-05-17 1999-06-15 Sdl, Inc. High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices
RU2133534C1 (ru) * 1997-08-08 1999-07-20 Государственное предприятие Научно-исследовательский институт "Полюс" Инжекционный лазер
WO1999053358A1 (en) * 1998-04-09 1999-10-21 Ceramoptec Industries, Inc. Frequency conversion combiner system for diode lasers

Also Published As

Publication number Publication date
EP1595316A2 (en) 2005-11-16
JP2006518548A (ja) 2006-08-10
TW200424729A (en) 2004-11-16
WO2004075362A3 (en) 2005-09-01
WO2004075362A2 (en) 2004-09-02
EP1595316A4 (en) 2006-08-23
CN1778022A (zh) 2006-05-24
KR20050107439A (ko) 2005-11-11

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MM4A Annulment or lapse of patent due to non-payment of fees