TWI288980B

TWI288980B - Light-Emitting Diode and the method of manufacturing the same

Info

Publication number: TWI288980B
Application number: TW95119528A
Authority: TW
Inventors: Wen-Chieh Huang; Jau-Shin Wang; Ying-Che Sung; Guang-Rung You
Original assignee: Arima Optoelectronics Corp
Priority date: 2006-06-02
Filing date: 2006-06-02
Publication date: 2007-10-21
Also published as: TW200802921A

Abstract

The present invention disclosed the structure of a light-emitting diode (LED). There is to form a structured composite stress release buffer layer (SCSRBL) that is horizontally and vertically disposed and compositely formed between a permanent substrate and a LED structure layer. This crossly formed 3-dimensional structure can release and rearrange the stress caused by a LED compression process. The vertical layer can withstand the front stress and the horizontal layer can absorb the heat stress. Moreover, this 3-dimensional structure can be compositely formed by two or more than two types of materials so the coefficient of thermal expansion of the composite material is between that of a temporary substrate and that of a permanent substrate to reduce the influence of strain and stress on a light-emitting active layer.

Description

AOC-06-08A-TW AOC-06-08A-TW1288980 九、發明說明：【發明所屬之技術領域】本發明係有關一種發光二極體，尤指一種利用複合材料及結構學的原理，在兩種基板中夾設一橫向層及縱向層交錯所構成之結構化複合應力纾緩衝層 (Structured Composite Stress Release Buffer Layer, SCSRBL), 以克服接合界面產生應力集中之問題。【先前技術】按，由InGaN材料製成之藍綠光LED已普遍商業化，而由於次世代照明及”綠色，，產業的興起，學術界及業界均致力於高亮度（High Brightness)發光二極體（Light Emitting Diode，LED)之研發。然而要達到未來照明的需求，LED必須要有極高的發光效率，提昇led發光效率的方法為：（1)提昇内部量子效率，（2)提昇光的萃取效率。然而，目前一般LED的光萃取效率仍偏低，故最有效的方法為提昇光的萃取效率。此外，次世代照明用的發光二極體多具有高電流密度的特性。晶粒散熱特性的好壞直接衝擊到發光效率及可靠度。針對這些問題，衍生的相關inGaN藍綠光晶粒製造技術，就有覆晶式藍綠光發光二極體和垂直式藍綠光發光二極體兩種。一般的InGaN發光二極體因缺乏晶格匹配的基板，大多成長在Sapphire基板上，因此產生很多缺陷。此一缺陷區域就成為一極易吸光的區域，也是產生高熱阻的介面，因 Sapphire為電和熱的不良導體，使用此基板做成晶粒，便有AOC-06-08A-TW AOC-06-08A-TW1288980 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a light-emitting diode, and more particularly to a principle of utilizing composite materials and structures, in two A structured composite stress release buffer layer (SCSRBL) formed by interlacing a lateral layer and a vertical layer is interposed in the substrate to overcome the problem of stress concentration at the joint interface. [Prior Art] According to the blue-green LED made of InGaN material, it has been generally commercialized, and due to the next generation lighting and "green", the rise of the industry, the academic community and the industry are committed to high brightness (High Brightness) Development of Light Emitting Diode (LED). However, in order to meet the needs of future lighting, LEDs must have extremely high luminous efficiency. The methods to improve LED luminous efficiency are: (1) improving internal quantum efficiency, and (2) improving Light extraction efficiency. However, the current light extraction efficiency of LEDs is still low, so the most effective method is to improve the extraction efficiency of light. In addition, the light-emitting diodes used in the next generation of illumination have high current density characteristics. The heat dissipation characteristics of the particles directly impact the luminous efficiency and reliability. In response to these problems, the related inGaN blue-green optical grain fabrication technology has a flip-chip blue-green light-emitting diode and vertical blue-green light. Two kinds of diodes. The general InGaN light-emitting diodes are mostly grown on the Sapphire substrate due to the lack of lattice-matched substrates, thus causing many defects. It is a highly light-absorbing region, and also generates high heat resistance of the interface, because of Sapphire poor conductor of heat and electricity, the use of this substrate is made of crystal grains, there

AOC-06-08A-TW 1288980 散熱不佳及電極必須在同一側之缺點。覆晶式發光二極體雖有散熱上的優勢，但即使加上反射鏡後，可同時萃取向上及向下的發光，但大部分的光仍需通過此一吸光區。其電極的製造方法，仍需以乾蝕刻的方式，將部分發光區去除，製作η電極。電極的設計方式，如一般傳統InGaN發光二極體，p和η在同一邊。因此，若要達到均勻的電流分佈 (Current Spreading)，需要較一般AllnGaP黃紅光晶粒，ρ和 η不同邊的設計，更為複雜。針對以上所述的缺點，垂直式藍綠光發光二極體以一高導熱及導電基板取代磊晶成長用的 | Sapphire基板，同時解決了散熱及光萃取的問題。在公告第415116號「可提高發光高度功效之發光二極體及其製作方法」專利案中，揭示一種在暫時基板之發光二極體，並利用晶圓黏貼技術，黏貼在一永久基板，並在黏貼層上形成一反射層。此種結構雖可藉有反射層提昇發光二極體的高度，然而在製程及結構上卻至少存在有以下的應力問題： (1)晶粒結中的薄膜及基板其熱導係數（Thermal , Conductivity)及熱膨脹係數（Coefficient of ThermalAOC-06-08A-TW 1288980 Disadvantages of poor heat dissipation and electrodes must be on the same side. The flip-chip LEDs have the advantage of heat dissipation, but even with the addition of mirrors, the upward and downward illumination can be extracted simultaneously, but most of the light still needs to pass through this absorption region. In the method of manufacturing the electrode, it is still necessary to remove a part of the light-emitting region by dry etching to form an n-electrode. The electrodes are designed in such a way that, in general, conventional InGaN light-emitting diodes, p and η are on the same side. Therefore, in order to achieve a uniform current distribution (Current Spreading), it is more complicated than the general AllnGaP yellow red crystal grain, and the design of the different sides of ρ and η. In view of the above disadvantages, the vertical blue-green light-emitting diode replaces the Sapphire substrate for epitaxial growth with a high thermal conductivity and conductive substrate, and solves the problems of heat dissipation and light extraction. In the patent No. 415116, "Light-emitting diodes capable of improving luminous efficacy and manufacturing method thereof", a light-emitting diode on a temporary substrate is disclosed, and is adhered to a permanent substrate by using a wafer bonding technique, and A reflective layer is formed on the adhesive layer. Although such a structure can enhance the height of the light-emitting diode by using a reflective layer, at least the following stress problems exist in the process and structure: (1) The thermal conductivity of the film and the substrate in the grain junction (Thermal, Conductivity) and coefficient of thermal expansion (Coefficient of Thermal

Expansion，CTE)差異問題：在晶片黏合的技術上最常用的是晶片壓合技術。在晶片的壓合過程中，有時伴隨著高溫製程。在溫度及壓力的製程下，常有應力不均或是甚至是應力集中的現象，導致製程結束後，晶片翹曲（Warpage)或是龜裂（Cracking)。即使在無上述現象的情況下，通常也隱含著極大的殘留應力（Residual Stresses),造成後續製程的困難。 -6-Expansion, CTE) Differences: The most common technique for wafer bonding is wafer bonding. During the lamination of the wafer, it is sometimes accompanied by a high temperature process. In the process of temperature and pressure, there is often a phenomenon of uneven stress or even stress concentration, which causes the wafer to warp or crack after the end of the process. Even in the absence of the above phenomenon, there is usually a large residual stress (Residual Stresses), which makes the subsequent process difficult. -6-

AOC-06-08A-TW AOC-06-08A-TW1288980 (2)大部分的薄膜容易受到高溫高壓而產生特性上的變異：在高溫高壓的情況下，許多薄膜容易因材料的過度擴散，甚至造成反應，失去原有的功能。【發明内容】緣是，本發明主要目的，係在提供一種發光二極體及其製法，其利用一縱橫交錯的結構化複合應力纾緩層來纾解及重新分佈LED壓合製程中所產生的應力，及減輕因升溫製程產生的熱應力對薄膜及發光層所造成之破壞。本發明再一目的，則在提供一種發光二極體及其製法，其進一步利用複合材料原理，使該結構化複合應力紆緩層以橫向層來吸收熱應力，以縱向層來承受正向壓力，以降低壓合製程中所造成的壓力，並強化晶圓之機械強度，提昇製程良率及可靠度。為達上述目的，本發明所採用之製法，其實施步驟包含： a) .提供一磊晶用之暫時基板； b) .於該暫時基板上形成一 LED結構層； c) .提供一永久基板，其上形成一導電層及一黏貼面； d) .於該永久基板與該LED結構層其中一表面，形成由橫向層及縱向層所複合而成之結構化複合應力抒緩層 (Structured Composite Stress Release Buffer Layer, SCSRBL), 此縱橫交錯之立體結構需具有導電導熱及形成歐姆接觸之特性，且其材料複合膨脹係數（Composite Coefficient of Thermal Expansion，CTE)，介於該暫時基板與該永久基板之間； -7-AOC-06-08A-TW AOC-06-08A-TW1288980 (2) Most of the films are susceptible to high temperature and high pressure and have variations in characteristics: in the case of high temperature and high pressure, many films are easily spread due to excessive diffusion of materials. Reacts and loses its original function. SUMMARY OF THE INVENTION The main purpose of the present invention is to provide a light-emitting diode and a method for fabricating the same, which utilizes a criss-crossed structured composite stress relief layer to decompose and redistribute the LED press-bonding process. The stress and the damage caused by the thermal stress generated by the heating process on the film and the luminescent layer. A further object of the present invention is to provide a light-emitting diode and a method for fabricating the same, which further utilizes the principle of composite material to cause the structured composite stress relieving layer to absorb thermal stress in a lateral layer and to withstand longitudinal pressure in a longitudinal layer. To reduce the pressure caused by the press-bonding process, and to strengthen the mechanical strength of the wafer, improve process yield and reliability. To achieve the above object, the method of the present invention comprises the steps of: a) providing a temporary substrate for epitaxy; b) forming an LED structure layer on the temporary substrate; c) providing a permanent substrate Forming a conductive layer and an adhesive surface thereon; d) forming a structured composite stress relieving layer composed of a lateral layer and a longitudinal layer on one surface of the permanent substrate and the LED structural layer (Structured Composite Stress Release Buffer Layer (SCSRBL), the three-dimensional structure of the crisscross structure needs to have the characteristics of conductive heat conduction and ohmic contact, and the composite coefficient of thermal expansion (CTE) thereof is between the temporary substrate and the permanent substrate. Between -7-

AOC-06-08A-TW AOC-06-08A-TW1288980 e) ·利用特定溫度（400°C〜700°C )及壓力（50〜500kg/cm2) 將該永久基板與該LED結構層壓合，使該結構化複合應力纾緩層（SCSRBL)接合於該永久基板與該LED結構層之間； f) .使用雷射、化學蝕刻及機械研磨其中任一方法將該暫時基板移除；以及 g) .形成一第一電極於該LED結構層部分表面，一第二電極於該永久基板底面。依據本發明上揭方法，其所製成之發光二極體結構，包含：一永久基板，其上具備一導電層及一黏貼面；一 LED結構層，其具備一磊晶層、一透明歐姆接層及一高反射層所構成；一結構化複合應力纾緩層（Structured Composite Stress Release Buffer Layer, SCSRBL)，係接合在該永久基板與該LED結構層之間，其係由橫向層及縱向層所複合而成之立體結構，此一立體結構具有導電導熱及形成歐姆接觸特性，且其材料的複合熱膨脹係數（Composite Coefficient of Thermal Expansion,CTE),需介於該 LED 結構層所生長之暫時基板與該永久基板之間；一第一電極，係形成於該LED結構層上之部分表面；以及一第二電極，係形成於該永久基板之底面。 -8-AOC-06-08A-TW AOC-06-08A-TW1288980 e) · The permanent substrate is laminated with the LED structure at a specific temperature (400 ° C to 700 ° C) and pressure (50 to 500 kg / cm 2 ). Bonding the structured composite stress relieving layer (SCSRBL) between the permanent substrate and the LED structure layer; f) removing the temporary substrate using any of laser, chemical etching, and mechanical polishing; and Forming a first electrode on a surface of the LED structural layer portion and a second electrode on a bottom surface of the permanent substrate. According to the method of the present invention, the LED structure comprises: a permanent substrate having a conductive layer and an adhesive surface; an LED structure layer having an epitaxial layer and a transparent ohmic layer a structural layer and a highly reflective layer; a structured composite stress relieving layer (SCSRBL) bonded between the permanent substrate and the LED structural layer, which is composed of a lateral layer and a longitudinal direction a three-dimensional structure composed of layers, which has electrical and thermal conductivity and ohmic contact characteristics, and a composite coefficient of thermal expansion (CTE) of the material needs to be temporarily formed by the growth of the LED structural layer. Between the substrate and the permanent substrate; a first electrode formed on a portion of the surface of the LED structure; and a second electrode formed on a bottom surface of the permanent substrate. -8-

AOC-06-08A-TW 1288980 【實施方式】首先，請參閱第一圖所示，提供一磊晶用之暫時基板 (10)，本實施例中係以藍寶石Sapphire(AI2O3)為說明，但不限定於此；接著，在該暫時基板上依序形成一 LED結構層 (20)，而構成發光元件之基本型態，其大體上包括：一緩衝層（21)、一磊晶層（22)、一透明歐姆接觸層（23)及一高反射層（24)所構成。又，該蠢晶層（22)包括由GaN糸材料所構成，例如 A1 InGaN，AlGaN等，其包括一第一披覆層（221)、一活性層 ® (222)，及一第二披覆層（223)，其中該活性層（222)即為發光層，其可為多重量子井（Multi pie Quantum Wei 1，MQW)。另，前述之高反射層（24)可由單一金屬材料形成，例如由鋁、銀或其合金等所構成，亦可由分佈式布拉格反射層 (DBR)所構成，其材料選自：Si〇2、Zn2〇3、ZnO、ITO、Si3N4、 AI2O3、MgO、MgF2、TiO、Ti〇2、Ta2〇5 及 Zr〇2。惟以上揭露之元件係屬先前技術（Prior Art)，非本發明之專利標的，容不贅述。 • 請續參閱第二圖所示，本發明進一步提供一永久基板 (30)，其上形成一導電層（31)及一黏貼面（32)。該永久基板 (30)選自導電之半導體基板，如砷化鎵、磷化鎵、矽等，或是金屬基板，如鉬、銅、鋁、鎢等及其合金。接續之步驟係在該永久基板（30)與該LED結構層（20) 其中任一表面，形成一結構化複合應力纾緩層（Structured Composite Stress Release Buffer Layer，SCSRBL)(40)。如第三圖（A)、（B)所示，本實施例係將該結構化複合應力纾緩層 9-AOC-06-08A-TW 1288980 [Embodiment] First, please refer to the first figure to provide a temporary substrate (10) for epitaxy. In this embodiment, sapphire (AI2O3) is used as an illustration, but not In this case, an LED structure layer (20) is sequentially formed on the temporary substrate to form a basic form of the light-emitting element, which generally comprises: a buffer layer (21) and an epitaxial layer (22). A transparent ohmic contact layer (23) and a highly reflective layer (24) are formed. Moreover, the stray layer (22) comprises a GaN germanium material, such as A1 InGaN, AlGaN, etc., comprising a first cladding layer (221), an active layer® (222), and a second cladding layer. The layer (223), wherein the active layer (222) is a light-emitting layer, which may be a multi-quantum well (MQW). In addition, the foregoing high-reflection layer (24) may be formed of a single metal material, for example, aluminum, silver or an alloy thereof, or may be composed of a distributed Bragg reflection layer (DBR), and the material thereof is selected from: Si〇2. Zn2〇3, ZnO, ITO, Si3N4, AI2O3, MgO, MgF2, TiO, Ti〇2, Ta2〇5 and Zr〇2. However, the above disclosed components are prior art (Prior Art), and the patents of the present invention are not described herein. • Referring further to the second figure, the present invention further provides a permanent substrate (30) having a conductive layer (31) and an adhesive surface (32) formed thereon. The permanent substrate (30) is selected from a conductive semiconductor substrate such as gallium arsenide, gallium phosphide, germanium or the like, or a metal substrate such as molybdenum, copper, aluminum, tungsten or the like and alloys thereof. The subsequent step is to form a Structured Composite Stress Release Buffer Layer (SCSRBL) (40) on either of the permanent substrate (30) and the LED structure layer (20). As shown in the third (A) and (B), the present embodiment is the structured composite stress relieving layer 9-

AOC-06-08A-TW AOC-06-08A-TW1288980 (40)形成於該LED結構層（20)表面，但不限定於此，亦即其亦可形成於該永久基板（30)之上，容不贅述。其構成係由平行於LED結構層（20)之橫向層（41)及垂直於LED結構層（20) 之縱向層（42)所複合而成之縱橫交錯立體結構。本實施例中係先形成多層橫向層（41)於該LED結構層（30)上，然後再形成多層縱向層（42)於該橫向層（41)上，惟不限定於此，如第四圖（A)、（B)所示，其亦可形成多層縱向層（42)於該LED 結構層（30)上，然後再形成橫向層（41)於該縱向層（42)上，其完全依所選定之材料而定；且該縱橫交錯之立體結構，非限於一層縱橫交錯複合，其亦可如第五圖（A)、（B)所示，形成多層之縱橫交錯複合立體結構。當然其可如第六圖（A)、 (B)所示，於兩層單一橫向層（411)、（412)之間，形成多數微形柱狀結構（421)所構成之縱向層（42 )，亦可達到縱橫交錯複合之立體結構。以上結構化複合應力纾緩層（40)，其需具有導電導熱及形成歐姆接觸之特性，而該永久基板（30)與該LED結構層 (20)係以晶圓壓合方式，使兩片基板（晶片）相互接合在一起，而該結構化複合應力纾緩層（40)即為此二片基板之接合層，故其複合熱膨脹係數需介於該暫時基板（10)與該永久基板（30)之間，其材料可選自一、金屬：金、鍺金、金錫、金皱、鈦、鎳、銘、銀、韵、把、絡及鎢等，以及由兩種或兩種以上之前述材料所組成之合金。二、非金屬：Si〇2、 Sn〇2、Zn2〇3、ZnO、ITO、Si3N4、AI2O3、MgO、MgF2、TiO、Ta2〇5、 Zr〇2 等。由於，一般金屬之CTE均高於所選之暫時基板（10)，而 -10-AOC-06-08A-TW AOC-06-08A-TW1288980 (40) is formed on the surface of the LED structure layer (20), but is not limited thereto, that is, it may also be formed on the permanent substrate (30). I will not repeat them. The structure is a cross-sectional and interlaced three-dimensional structure which is formed by a lateral layer (41) parallel to the LED structure layer (20) and a vertical layer (42) perpendicular to the LED structure layer (20). In this embodiment, a plurality of lateral layers (41) are formed on the LED structure layer (30), and then a plurality of vertical layers (42) are formed on the lateral layer (41), but are not limited thereto, such as the fourth As shown in Figures (A) and (B), it is also possible to form a plurality of longitudinal layers (42) on the LED structure layer (30), and then form a lateral layer (41) on the longitudinal layer (42), which is completely Depending on the selected material; and the three-dimensional structure of the criss-crossing is not limited to one layer of crisscross compounding, and may also form a multi-layer crisscross composite three-dimensional structure as shown in FIG. 5(A) and (B). Of course, as shown in the sixth diagrams (A) and (B), a longitudinal layer formed by a plurality of micro-columnar structures (421) is formed between the two single lateral layers (411) and (412). ), it is also possible to achieve a three-dimensional structure of criss-crossing compound. The above structured composite stress relieving layer (40) needs to have the characteristics of conductive heat conduction and ohmic contact, and the permanent substrate (30) and the LED structure layer (20) are wafer-bonded to make two pieces. The substrate (wafer) is bonded to each other, and the structured composite stress relieving layer (40) is the bonding layer of the two substrates, so the composite thermal expansion coefficient needs to be between the temporary substrate (10) and the permanent substrate ( Between 30), the material may be selected from the group consisting of: gold, gold, gold, gold, wrinkles, titanium, nickel, Ming, silver, rhyme, palladium, tungsten, etc., and two or more An alloy composed of the foregoing materials. 2. Non-metal: Si〇2, Sn〇2, Zn2〇3, ZnO, ITO, Si3N4, AI2O3, MgO, MgF2, TiO, Ta2〇5, Zr〇2, and the like. Because the CTE of the general metal is higher than the selected temporary substrate (10), and -10-

AOC-06-08A-TW AOC-06-08A-TW1288.980 非金屬如氧化物等，都遠低於該暫時基板（10)及永久基板 (30)，故可以複合材料或摻雜之方式，使該結構化合應力纾緩層（40)之複合膨脹係數（CTE)介於該暫時基板（10)與永久基板（30)之間。故，本發明之結構化複合應力纾緩層（40) 除係由縱橫交錯所複合而成之立體結構，以增進其機械強度外，其材料亦可選自二種或二種以上所構成之複合材料，形成不僅結構上複合，且材料亦可為複合之型態，故可達相輔相乘的效果。進一步，本發明利用特定溫度（400°C〜700°C )及壓力 (50〜500kg/cm2)將該永久基板（30)與該LED結構層（20)壓合，如第三圖（B)、第四圖（B)、第五圖（B)及第六圖（B)所示，使該結構化複合應力纾緩層（40)接合於該永久基板（30)與該LED結構層（20)之間。接著，如第七圖所示，使用雷射、化學蝕刻及機械研磨其中任一方法，可由緩衝層（21)處將該暫時基板（10)移除；以及，如第八圖所示，形成一第一電極（51)於該LED結構層 (20)部分表面，一第二電極（52)於該永久基板（30)底面，據以構成本發明之垂直型發光二極體（50)。是以，本發明藉助橫向層（41)及縱向層（4 2)之交錯複合為一立體結構，並以該縱向層（42)來承受正向壓力，並利用該橫向層（41)來吸收熱應力，並配合此接合層複合材料依所選定之永久基板（30)之CTE及其他材料係數，如彈性係數而加以優化，使該結構化複合應力纾緩層（40)之 CTE值介於該暫時基板（10)與該永久基板（30)之間，來纾解及重新分佈應力，藉以減輕因升溫製程產生熱應力對薄 -11 -AOC-06-08A-TW AOC-06-08A-TW1288.980 Non-metals such as oxides are much lower than the temporary substrate (10) and permanent substrate (30), so they can be composited or doped. The composite expansion coefficient (CTE) of the structural stress relieving layer (40) is interposed between the temporary substrate (10) and the permanent substrate (30). Therefore, the structured composite stress relieving layer (40) of the present invention may be selected from two or more types in addition to the three-dimensional structure formed by crisscrossing to enhance its mechanical strength. Composite materials, not only structurally composite, but also the material can be a composite type, so the synergistic multiplication effect can be achieved. Further, the present invention presses the permanent substrate (30) with the LED structure layer (20) at a specific temperature (400 ° C to 700 ° C) and pressure (50 to 500 kg / cm 2 ), as shown in the third figure (B) And the fourth (B), fifth (B), and sixth (B), the structured composite stress relieving layer (40) is bonded to the permanent substrate (30) and the LED structure layer ( 20) Between. Next, as shown in the seventh figure, the temporary substrate (10) may be removed from the buffer layer (21) by any one of laser, chemical etching, and mechanical polishing; and, as shown in the eighth figure, formed A first electrode (51) is on a surface of a portion of the LED structure layer (20), and a second electrode (52) is on a bottom surface of the permanent substrate (30) to form a vertical type LED (50) of the present invention. Therefore, the present invention utilizes the interlaced layer of the transverse layer (41) and the longitudinal layer (42) to form a three-dimensional structure, and the longitudinal layer (42) is subjected to the forward pressure, and is absorbed by the transverse layer (41). The thermal stress is matched with the CTE of the selected permanent substrate (30) and other material coefficients, such as the modulus of elasticity, such that the CTE value of the structured composite stress relief layer (40) is between The temporary substrate (10) and the permanent substrate (30) are used to relieve and redistribute stress, thereby reducing thermal stress caused by the heating process to the thin -11 -

1288980 AOC-06-08A-TW 膜及發光層所造成之破壞。至於該橫向層（41)或縱向層 (42)可為一層或多層所構成，而其實施順序，應依材料之選擇作決定為較佳。進一步，如第八圖所示，本發明之垂直型發光二極體 (5 0 )，利用第一電極（51)及第二電極（$ 2 )不同侧的特性，使電流分佈更均勻，且利用該高反射層（2 4)，使該活性層 (222)向下發射之光能向上反射，提高光的萃取效率；故以此製得之垂直型發光二極體（5〇)有高亮度、製程良率高等功效增進。綜上所述，本發明所揭示之技術手段，確具「新穎性」、「進步性」及「可供產業利用」等發明專利要件，祈請鈞局惠賜專利，以勵發明，無任德感。惟，上述所揭露之圖式、說明，僅為本發明之較佳實施例，大凡熟悉此項技藝人士，依本案精神範疇所作之修飾或等效變化，仍應包括本案申請專利範圍内。 -12·1288980 AOC-06-08A-TW Damage caused by the film and luminescent layer. The transverse layer (41) or the longitudinal layer (42) may be composed of one or more layers, and the order of implementation thereof is preferably determined depending on the choice of materials. Further, as shown in the eighth figure, the vertical type light emitting diode (50) of the present invention utilizes the characteristics of the different sides of the first electrode (51) and the second electrode ($2) to make the current distribution more uniform, and The high-reflection layer (24) is used to make the light emitted downward by the active layer (222) reflect upward, thereby improving the extraction efficiency of the light; therefore, the vertical type light-emitting diode (5〇) obtained by the light-emitting layer has a high height. The brightness and process yield are improved. In summary, the technical means disclosed in the present invention have the invention patents such as "novelty", "progressiveness" and "available for industrial use", and pray for the patent to be invented by the bureau. German sense. The drawings and descriptions of the present invention are merely preferred embodiments of the present invention. Those skilled in the art, which are modified by the spirit of the present invention, should be included in the scope of the patent application. -12·

AOC-06-08A-TW AOC-06-08A-TW1288980 【圖式簡單說明】第一圖係本發明之LED結構層截面圖。第二圖係本發明之永久基板截面圖。第三圖係（A)、（B)係本發明第一實施例製作過程。第四圖（A)、（B)係本發明第二實施例製作過程。第五圖（A)、（B)係本發明第三實施例製作過程。第六圖（A)、（B)係本發明第四實施例製作過程。第七圖係本發明第四實施例移除暫時基板之示意圖。第八圖係本發明完成時之LED結構圖。【主要元件符號說明】 (10)暫時基板 (20) LED結構層 (21) 緩衝層 (22) 磊晶層 (221) 第一披覆層 (222) 活性層 (223) 第二彼覆層 (23) 透明歐姆接觸層 (24) 高反射層 (30) 永久基板 (31) 導電層 (32) 黏貼面 (40) 結構化複合應力紆緩層 (41) 橫向層 (411)、（412)單一橫向層 -13- AOC-06-08A-TW1288980 (4 2)縱向層 (421)微行柱狀結構 (50)垂直型發光二極體AOC-06-08A-TW AOC-06-08A-TW1288980 [Simplified Schematic] The first figure is a cross-sectional view of the LED structural layer of the present invention. The second drawing is a cross-sectional view of the permanent substrate of the present invention. The third drawing (A), (B) is a manufacturing process of the first embodiment of the present invention. The fourth drawing (A) and (B) are the manufacturing process of the second embodiment of the present invention. The fifth (A) and (B) are the manufacturing processes of the third embodiment of the present invention. The sixth drawing (A) and (B) are the manufacturing process of the fourth embodiment of the present invention. The seventh figure is a schematic view of a fourth embodiment of the present invention for removing a temporary substrate. The eighth figure is an LED structure diagram at the completion of the present invention. [Main component symbol description] (10) Temporary substrate (20) LED structure layer (21) Buffer layer (22) Epitaxial layer (221) First cladding layer (222) Active layer (223) Second cladding layer ( 23) Transparent ohmic contact layer (24) Highly reflective layer (30) Permanent substrate (31) Conductive layer (32) Adhesive surface (40) Structured composite stress relief layer (41) Transverse layer (411), (412) single Transverse layer-13- AOC-06-08A-TW1288980 (4 2) Vertical layer (421) micro-row columnar structure (50) vertical type light-emitting diode

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Claims

AOC-06-08A-TW 1288980 X. Patent application scope: 1 · A method for manufacturing a light-emitting diode, the implementation steps thereof include: a) providing a temporary substrate for epitaxy; b) forming on the temporary substrate An LED structure layer; c) providing a permanent substrate on which a conductive layer and an adhesive surface are formed; d) forming a surface of the permanent substrate and the LED structure layer by a lateral layer and a vertical layer Structured Composite Stress Release Buffer Layer (SCSRBL), this three-dimensional structure with criss-crossing, which needs to have the characteristics of conductive heat conduction and ohmic contact, and its composite coefficient of expansion (Composite Coefficient) Of Thermal Expansion (CTE), between the temporary substrate and the permanent substrate; e) using a specific temperature (400 ° C ~ 700 ° C) and pressure (50 ~ 500 kg / cm1) the permanent substrate and the The LED structure is laminated such that the structured composite stress buffer layer (SCSRBL) is bonded between the permanent substrate and the LED structure layer; 〇·Using laser, chemical etching, and mechanical polishing The temporary substrate is removed; and β g)· forms a first electrode on a surface of the LED structural layer portion, and a second electrode is on a bottom surface of the permanent substrate. The method of manufacturing the light-emitting diode according to claim 1, wherein the structured composite stress relieving layer (SCSRBL) is selected from the group consisting of two or more materials. to make. 1288980 AOC-06-08A-TW ^ The method of manufacturing a light-emitting diode according to the above application, wherein the composite material comprises a metal and a non-metal. 4 · The method for producing a light-emitting diode according to claim 2, wherein the metal material is selected from the group consisting of: gold, gold, gold, gold, titanium, two silver, first, and An alloy composed of at least two materials of chromium and tungsten. The method for manufacturing the light-emitting diode according to the third aspect of the invention, wherein the non-metal material is selected from the group consisting of: Sn〇2, Zn2〇3, Zn〇, IT〇, 'S1O2, Sl3N4, αι2〇3, _, MgF2, Ti〇, 七〇5, and Zr〇2 are each composed of a combination thereof. And the method for preparing the light-emitting diode according to item 1 of the patent scope, and the structure of the composite stress relieving layer (SCSRBL), which comprises forming a plurality of horizontal layers first, A plurality of longitudinal layers are formed. 7 · As in the method of manufacturing the light-emitting diode described in the patent application, the structuring composite stress relieving layer (SCSRBL) formed by the 〇V step d) has been formed into a plurality of vertical layers. A plurality of lateral layers are formed. ^ ^ The method of manufacturing the light-emitting diode according to the first aspect of the patent range, and/or the step d) forming the structured composite stress relieving layer (SCSRBL) to form the longitudinal layer between the early k-layers, The method of manufacturing a light-emitting diode according to the first aspect of the invention, wherein the LED structure layer formed on the temporary substrate is formed by the method of manufacturing a plurality of micro-columnar structures - 16 - 1288980 AOC-06-08A-TW 9 The sequence includes: a buffer layer, a worm layer, a transparent ohmic contact layer, and a highly reflective layer. The method of manufacturing the light-emitting diode according to claim 9, wherein the epitaxial layer comprises: a first cladding layer formed on the buffer layer, and a first cladding layer formed on the first cladding layer An active layer on the layer and a second coating layer formed on the active layer. The method of manufacturing a light-emitting diode according to claim 9, wherein the high-reflection layer comprises a distributed Bragg reflection layer (I) BR, and the material thereof is selected from the group consisting of Si〇2 and Zm. 〇3, ZnO, ITO, Si3N4, Al2〇3, MgO, MgF2, TiO, Ti〇2, TiO, Ta2〇dZr〇2. The method of producing a light-emitting diode according to claim 9, wherein the high-reflection layer comprises a single metal material selected from the group consisting of silver, silver and alloys thereof.

The method of producing a light-emitting diode according to claim 1, wherein the temporary substrate is selected from the group consisting of Ai1 2〇3. The method of manufacturing the light-emitting diode according to the first aspect of the invention, wherein the permanent substrate is selected from the group consisting of a conductive semiconductor substrate and a metal substrate. AOC-06-08A-TW AOC-06-08A-TW1288980 1 5 · A light-emitting diode comprising: a permanent substrate having a conductive layer and an adhesive surface; an LED structure layer having a beam a crystal layer, a transparent ohmic layer and a highly reflective layer; a structured composite stress relief buffer layer (SCSRBL) bonded between the permanent substrate and the LED structure layer, A three-dimensional structure composed of a transverse layer and a longitudinal layer. The three-dimensional structure needs to have electrical and thermal conductivity and ohmic contact characteristics, and a composite coefficient of thermal expansion (CTE) of the material is interposed between the LEDs. a temporary substrate between the temporary substrate and the permanent substrate; a first electrode formed on a portion of the surface of the LED structure; and a second electrode formed on a bottom surface of the permanent substrate. The light-emitting diode according to claim 15, wherein the structured composite stress relieving layer (SCSRBL) is selected from the group consisting of two or more materials. The light-emitting diode according to claim 16, wherein the composite material comprises a metal and a non-metal. The light-emitting diode according to claim 15, wherein the lateral layer and the longitudinal layer comprise one or more layers. -18- 1288980 AOC-06-08A-TW 19. The light-emitting diode according to claim 18, wherein the vertical layer is formed on the lateral layer. The light-emitting diode according to claim 18, wherein the k-direction layer is formed on the longitudinal layer. The light-emitting diode according to the item, which is formed in two layers of a single lateral direction 2 1 · as in the patent application range 18, the longitudinal layer comprises between the layers of the micro-columnar structure.

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