TWI288180B - Sputtering target and optical recording medium - Google Patents

Sputtering target and optical recording medium Download PDF

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TWI288180B
TWI288180B TW093110820A TW93110820A TWI288180B TW I288180 B TWI288180 B TW I288180B TW 093110820 A TW093110820 A TW 093110820A TW 93110820 A TW93110820 A TW 93110820A TW I288180 B TWI288180 B TW I288180B
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optical recording
recording medium
alloy
sputtering target
ppm
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TW093110820A
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TW200502412A (en
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Hideyuki Takahashi
Hideo Takami
Masataka Yahagi
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Nikko Materials Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

A Ge(alpha)-In(beta)-Sb(gamma)-Te(delta) alloy sputtering target for optical recording media characterized in that letting the sum of the respective composition ratios alpha, beta, gamma, delta (atom%) be 100, their ranges are 0.1 <= alpha <= 10, 0.1 <= beta <= 10, 60 <= gamma <= 90, 10 <= delta < 22. An optical recording medium made of the alloy is also disclosed. Few particles are produced during sputtering, and consequently a high-quality thin film is stably formed. The optical recording medium hardly causes an error of record bits and has a high recording density.

Description

1288180 玖、發明說明： 【發明所屬之技術領域】 本發明係關於濺鍍靶以及該靶之製造方法與光記錄媒 體尤其關於在濺鍵時粒子發生量少、可安定地製作品質 佳之薄膜、且可得到不發生記錄位元錯誤之光記錄媒體之 Ge-In-Sb-Te合金濺鍍靶，以及由該合金所構成之光記錄媒 【先前技術】 近來開發出不須磁頭即可記錄、再生之高密度記錄光 碟技術，該技術受到相當多之注目。該光碟分為再生專用 型、寫入一次型、重複寫入型三種，尤以在寫入一次型、 重複寫入型所使用之相變化方式受到注目。 相變化光碟，係利用雷射光照射基板上之記錄薄膜使 之加熱昇溫，使該記錄薄膜結構產生結晶學之相變化（非結 具體而言，係檢測出 結晶）來進行資訊之記錄、再生， 該等相間之光學常數變化所引起之反射率變化以再生資訊 上述相變化以點徑會聚成1 進行之。在此，當lvm之雷朝 1〜數/zm左右之雷射光照射1288180 发明 发明 发明 发明 发明 发明 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅 溅A Ge-In-Sb-Te alloy sputtering target capable of obtaining an optical recording medium in which recording bit errors do not occur, and an optical recording medium composed of the alloy. [Prior Art] Recently, recording and reproduction can be performed without a magnetic head. The high-density recording disc technology has received considerable attention. The optical disc is classified into a reproduction-only type, a write-once type, and a repetitive write type, and is particularly noticeable in the phase change mode used in the write once type and the repeated write type. In the phase change optical disc, the recording film on the substrate is irradiated with laser light to heat the temperature, and the crystal structure phase change is generated by the structure of the recording film (in particular, the crystal is detected) to record and reproduce information. The change in the reflectance caused by the change in the optical constant between the phases is performed by the convergence of the above-mentioned phase changes by the dot diameter. Here, when the lightning of lvm is toward 1~number/zm, the laser light is irradiated.

記錄次數。 相變化，係要求適合此相變化之光記錄媒體。一般 DVD RAM等之相變化光碟須保證1〇5〜1〇6次之重複 1288180 另一方面，當在基板上形成光記錄媒體用薄膜時係使 用濺鍍法，因靶之材料所產生之粒子多，可能造成品質變 差。尤其在高記錄密度媒體中，因粒子等造成記錄位元之 錯誤變成嚴重之問題。起因於此，將產生不良品而導致良 率變差。 以往所提案之光記錄媒體，係由GeU )-In(沒）_Sb( y )-Te( δ)合金所構成之靶，當各成分組成比+ 原子 ％)=100 時，〇·1$α$7、 $占$ 30，其可進行CLV記錄與CAV記錄（參照特開 2002-264515 號公報）。 再者，前人提出之光記錄媒體，當其以GeaXbSbyTe〇 a-b-y)表示時 ’ X 係擇自 In、Au、Cu、Al、Ga、Pb、Ti、Sn 中之至少一種元素，其中〇 〇〇1 $ 0.20、0.01 $ bg 0.20 、0.40 $ y $ 0.90，且在記錄層含有氮（參照特開2〇〇2_ 264514號公報）。 再者，前人提出之光記錄媒體，其相變化記錄層以Sb 、Te作為必要元素，並對該SbTe添加至少一種以上之χ 元素，而 X 係選自 Ag、Au、Cu、Ζη、Β、Al、Ga、In、 Si、Ge、Sn、Pb、N、P、Bi、La、Ce、Cd、Tb(參照特開 2002-245663 號公報）。 再者，前人提出之相變化光碟用濺鍍靶，其係高純度 Ge，或擇自 Al、Si、Fe、Cr、Ta、Nb、Cu、Mn、Mo、 、Ni、Ti、Zr、Hf、Co、Ir、Pt、Ru、B 與 C 中至少一種 元素其含量在〇·1〜50at原子％範圍内之Ge合金，且Ag與 1288180 AU含量各在5pPm以下（參照特開20〇2-69624號公報）。 【發明内容】 本發明之目的，係為了提供光記錄媒體用 合金減鑛乾、該合金乾之製造方法、以及由該合金所構成 之光記錄媒體，該乾在濺鑛時粒子發生量少，可安定地製 作口口質佳之薄冑，且減少記錄位元錯誤的發生並達成高記 錄密度。 為了解決上述問題，本發明人#深入研究之結果發現 ，選擇適當組成之Ge-In-Sb-Te合金可達到高記錄密度， 並嚴格限制氧含量、且嚴謹地調整晶粒密度，可有效抑制 在濺鍍時粒子之產生。 基於此發現本發明提供出： L一種光記錄媒體用Ge-In-Sb-Te合金濺鍍靶及由該合 金所構成之光記錄媒體，係由Ge(a)_In(谷）_sb(n_Te((5) 合金所構成之靶，其特徵在於：當各成分組成比a、沒、 T、5 (原子％)合計為1〇〇時，〇」$ a $ 、〇1 $泠$ 1〇 Λ 60^ r ^ 90 ^ 10^ δ &lt;22 ； 2·如上述1之光記錄媒體用Ge_In-Sb-Te合金濺鍍靶及 由該合金所構成之光記錄媒體，其氧含量在15〇〇ppm以下 3.如上述1之光記錄媒體用Ge-In-Sb-Te合金濺鍍靶及 由該合金所構成之光記錄媒體，其氧含量在800PPm以下 4·如上述1〜3中任一之光記錄媒體用Ge-In-Sb-Te合 1288180 金減餘，該無之結晶平均粒度在1〇〇//m以下； 5.如上述1〜3中任一之光記錄媒體用Ge-In-Sb-Te合 I濺鍍靶，該靶之結晶平均粒度在5 〇 &quot;爪以下； 6·如上述1〜5中任一項之光記錄媒體用Ge-In-Sb-Te 合金濺鍍靶，其鐵含量為1〜l00pp„^ 發明效果 本發明之光記錄媒體用Ge-In-Sb-Te合金濺鍍靶以及 由A a金所構成之光記錄媒體，在濺鍍時粒子發生量少， 可安疋地裝作口口質佳之薄膜，可達成不發生記錄位元錯誤 且具高記錄密度之效果。 【實施方式】 本發明之光記錄媒體用Ge_In_Sb_Te合金濺鍍靶以及 由該合金所構成之光記錄媒體，係由Ge⑷-In⑷_Sb(r )-Te((5)合金所構成，當各成分組成比^、a、γ、以原 子合計為η)〇時， $90、10$ 5&lt;22。該合令細入及1 + 口金、、且θ係可達到高記錄密度化之 組成’可實現結晶學上之相變化’亦即非結晶與結晶之相 變化，且可大幅提升重複記錄之次數。 再者，本發明之光記錄媒體用Ge如㈣合錢鑛 把，其乳含量纟15GGppm以下，又以將之嚴格限制在 8〇0PPm以下較佳。藉此，可顯著減少軸時粒子之發生， 而可安定地製作高品質薄媒’進而可製造不發生記錄位元 錯誤、達成高記錄密度之光記錄媒體。 又，由於在光記錄媒體中，氧會選擇性地與^結合 1288180 ’使得非結晶化與結晶化其相互轉變之安定性變差，導致 重複§己錄次數降低。因此，在得到高品質膜之考量點上， 限制光記錄媒體中之氧含量（盡量減少其含量）係重要的。 再者’在防止濺鍍時所產生之粒子上，將乾材之纟士晶 平均粒度限制至100 &quot; m以下極為有效。藉此，同樣地可 製作不發生記錄位元錯誤之優良薄膜。耙材之結晶平均粒 度又以在50 μ m以下者較理想。 又，在本發明之光記錄媒體用金錢鍵 靶（記錄媒體）中，鐵含量在^丨㈧卯爪係具效果的。若^ 含量不到Ippm則不具添加之效果；若其超過1〇〇ppm則 CNR與D0W變差，故在添加鐵之情形下，鐵含量以 1〜1 OOppm車交佳。 本發明之光記錄媒體用Ge_In_Sb_Te合金濺錢乾，可 將Ge粉、In粉、Sb粉、Te粉在安瓿内合成，所得之錠粉 碎至既定之粒度後，使之均勻地分散混合後，利用熱壓機 ，以燒結溫度400〜600〇C、面壓75〜25〇kg/cm2之條件燒結 製造。 實施例 以下，根據實施例與比較例說明之。再者，本實施例 僅為一例，並未因該例而有所限制。亦即，本發明僅受申 請專利範圍所限制，其可包含本發明實施例以外之各種變 化形式。 (實施例1-7) 準備純度5叭99.999。/〇)之Ge粉、In粉、外粉、Te粉 10 1288180 ’將該等粉末以Ge(a)_In(/3)_Sb(r)-Te(5)組成調合後在 安親内合成’所得之錠粉碎至所需之粒度後填充至石墨製 模中’以溫度600°C、壓力15〇kg/cm2之條件進行熱壓。 將該燒結體進行最終之精加工形成靶。靶之相對密度 為99%(1〇〇%之密度為5 54g/cm3)。在該靶之任意3處所取 得之樣品密度以阿基米德法測定。 再者，在同組成中，Te含量占（at%)、氧含量（wtppm) 粒位（// m)、Fe 含篁、CNR(carrier to noise ratio)、 D〇W(direct over write)、濺鍍時產生之粒子之結果如表i 所示。 再者’ CNR(dB)係表示30m/s時之量測值；DOW係表 示進行100次覆寫記錄時以雜訊評估之結果。雜訊係最小 凹槽長信號（3T)相對於最大凹槽長信號（丨1T)之再生信號偏 差值，此處以其在20%以下為〇κ，在20%以上則判為NG。 又，評估樣品，係在DVD空白媒體上連續成膜出The number of records. The phase change requires an optical recording medium suitable for this phase change. Generally, a phase change optical disc such as a DVD RAM must be 1 〇 5 〜 1 〇 6 repetitions. 1288180 On the other hand, when a film for an optical recording medium is formed on a substrate, a sputtering method is used, and particles generated by the target material are used. More, may cause poor quality. Especially in high recording density media, errors in recording bits due to particles and the like become serious problems. As a result, defective products are produced and the yield is deteriorated. The optical recording medium proposed in the past is a target composed of a GeU )-In (not) _Sb( y )-Te ( δ ) alloy, and when the composition ratio of each component is + atomic % = 100, 〇·1$α $7, $30, which can perform CLV recording and CAV recording (refer to Japanese Laid-Open Patent Publication No. 2002-264515). Furthermore, the optical recording medium proposed by the predecessor, when represented by GeaXbSbyTe〇aby), is selected from at least one of In, Au, Cu, Al, Ga, Pb, Ti, and Sn, of which 〇〇〇 1 $ 0.20, 0.01 $ bg 0.20 , 0.40 $ y $ 0.90, and nitrogen is contained in the recording layer (refer to Japanese Laid-Open Patent Publication No. 2-264514). Furthermore, in the optical recording medium proposed by the prior art, the phase change recording layer has Sb and Te as essential elements, and at least one or more elements are added to the SbTe, and the X system is selected from the group consisting of Ag, Au, Cu, Ζη, Β. Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Cd, Tb (refer to Japanese Laid-Open Patent Publication No. 2002-245663). Furthermore, the phase change optical discs proposed by the predecessors are sputtering targets, which are high-purity Ge, or selected from Al, Si, Fe, Cr, Ta, Nb, Cu, Mn, Mo, Ni, Ti, Zr, Hf. a Ge alloy having a content of at least one of Co, Ir, Pt, Ru, B, and C in a range of 〜·1 to 50 atat%, and Ag and 1288180 AU contents each being 5 pPm or less (refer to the special opening 20〇2- Bulletin No. 69624). SUMMARY OF THE INVENTION An object of the present invention is to provide an alloy ore-reducing dry for an optical recording medium, a method for producing the alloy, and an optical recording medium comprising the alloy, wherein the amount of particles generated during sputtering is small. It is possible to stably produce a thin mouth with good mouth quality, and reduce the occurrence of recording bit errors and achieve high recording density. In order to solve the above problems, the inventors of the present invention have intensively studied and found that the Ge-In-Sb-Te alloy having an appropriate composition can achieve a high recording density, strictly limits the oxygen content, and rigorously adjusts the grain density, thereby effectively suppressing The generation of particles during sputtering. Based on the findings, the present invention provides: L A Ge-In-Sb-Te alloy sputtering target for an optical recording medium and an optical recording medium composed of the alloy, which is composed of Ge(a)_In(Valley)_sb(n_Te( (5) A target composed of an alloy, characterized in that when the composition ratios a, λ, T, and 5 (atomic %) of each component are 1 合, 〇"$ a $ , 〇 1 $ 泠 $ 1 〇Λ 60^r ^ 90 ^ 10^ δ &lt;22;2; The Ge_In-Sb-Te alloy sputtering target for the optical recording medium of the above 1, and the optical recording medium composed of the alloy, having an oxygen content of 15 〇〇 (2) The optical recording medium comprising the Ge-In-Sb-Te alloy sputtering target for an optical recording medium and the optical recording medium comprising the alloy, wherein the oxygen content is 800 ppm or less. 4, as in any of the above 1 to 3 The optical recording medium is made of Ge-In-Sb-Te and 1288180 gold, and the average particle size of the crystal is less than 1 〇〇//m. 5. The optical recording medium of any one of the above 1 to 3 is Ge- An In-Sb-Te-I sputtering target having a crystal having an average particle size of 5 〇&quot;below; 6. The optical recording medium of any one of the above 1 to 5 is splashed with Ge-In-Sb-Te alloy. Plating target, its iron content is 1~l00pp„^ The Ge-In-Sb-Te alloy sputtering target for an optical recording medium of the present invention and the optical recording medium comprising A a gold have a small amount of particles generated during sputtering, and can be mounted as a film having good mouth quality. The effect of not having a recording bit error and having a high recording density can be achieved. [Embodiment] The Ge_In_Sb_Te alloy sputtering target for an optical recording medium of the present invention and an optical recording medium composed of the alloy are Ge(4)-In(4)_Sb( r )-Te (composed of (5) alloy, when the composition ratio of each component is ^, a, γ, η in total), $90, 10$ 5 &lt; 22. The order is fine and 1 + gold, And the θ system can achieve a high recording density of the composition 'can achieve crystallographic phase change', that is, phase change of amorphous and crystalline, and can greatly increase the number of repeated recordings. Furthermore, the optical recording medium of the present invention Ge (4) Hefei Mine, whose milk content is less than 15 GGppm, is preferably limited to 8 〇 0 ppm below. This can significantly reduce the occurrence of axial particles, and can stably produce high quality thin media. 'In turn, it can be manufactured without recording bit errors and achieving high In the optical recording medium, oxygen is selectively combined with 1288180', so that the stability of the transformation between the non-crystallization and the crystallization is deteriorated, resulting in a decrease in the number of repetitions. Therefore, it is important to limit the oxygen content (to minimize the content) in the optical recording medium at the point of obtaining a high-quality film. Further, in the particles generated during the prevention of sputtering, the gentleman of the dry material will be It is extremely effective to limit the average grain size to less than 100 &quot; m. Thereby, an excellent film which does not cause a recording bit error can be produced in the same manner. It is desirable that the average crystallite size of the coffin is less than 50 μm. Further, in the money key target (recording medium) for an optical recording medium of the present invention, the iron content is effective in the 丨(八)卯 claw system. If the content of ^ is less than 1 ppm, the effect of addition is not obtained; if it exceeds 1 〇〇 ppm, CNR and D0W are deteriorated, so in the case of adding iron, the iron content is preferably 1 to 10,000 ppm. The optical recording medium of the present invention is sputtered with Ge_In_Sb_Te alloy, and Ge powder, In powder, Sb powder, and Te powder can be synthesized in an ampoule, and the obtained ingot is pulverized to a predetermined particle size, and then uniformly dispersed and mixed, and then used. The hot press is sintered at a sintering temperature of 400 to 600 Torr C and a surface pressure of 75 to 25 〇 kg/cm 2 . EXAMPLES Hereinafter, the examples and comparative examples will be described. Furthermore, this embodiment is only an example and is not limited by this example. That is, the present invention is only limited by the scope of the claims, and may include various modifications other than the embodiments of the present invention. (Example 1-7) Preparation purity 5 lb 99.999. /〇)Ge powder, In powder, outer powder, Te powder 10 1288180 'The powders are blended with Ge(a)_In(/3)_Sb(r)-Te(5) and then synthesized in the parent' The obtained ingot was pulverized to a desired particle size, and then filled in a graphite mold, and hot pressed at a temperature of 600 ° C and a pressure of 15 〇 kg / cm 2 . The sintered body is subjected to final finishing to form a target. The relative density of the target was 99% (the density of 1% was 5 54 g/cm3). The density of the sample taken at any three of the targets was measured by the Archimedes method. Furthermore, in the same composition, Te content accounts for (at%), oxygen content (wtppm), grain position (//m), Fe yttrium, CNR (carrier to noise ratio), D〇W (direct over write), The results of the particles produced during sputtering are shown in Table i. Furthermore, CNR (dB) indicates the measured value at 30 m/s; DOW indicates the result of noise evaluation when 100 overwrite recordings were performed. The noise signal minimum deviation of the groove length signal (3T) relative to the maximum groove length signal (丨1T) is 〇κ below 20%, and NG is above 20%. Also, the evaluation samples were continuously formed on the DVD blank media.

ZnS-Si〇2(45nm)、記錄層（i5nm)、ZnS-SiO2(20nm)、A1-ZnS-Si〇2 (45 nm), recording layer (i5 nm), ZnS-SiO2 (20 nm), A1-

Ti(l50nm)而製成。 比較例 (比較例1-6) 準備純度5Ν(99·999%)之Ge粉、in粉、sb粉、Te粉 ，將該等粉末以Ge(a)-In(/3)-Sb(y)-Te(占）組成調合並進 行乾式混合後，在安瓿内合成，所得之錠粉碎至既定之粒 度後填充至石墨製模中，以溫度6〇〇〇c、壓力i5〇kg/cm2 之條件進行熱壓。 11 1288180 將該燒結體進行最終精加工形成靶。靶之相對密度為 99%(100%之密度為5.54g/cm3)。在該靶之任意3處所取得 之樣品密度以阿基米德法測定。 再者，在同組成中，Te含量6 (at%)、氧含量（wtppm) 、粒徑（// m)、Fe含量、CNR(dB)、DOW、濺鍍時產生之 粒子之結果與實施例比較，如表1所示。又，CNR(dB)測 定值、DOW測定值、評估樣品之濺鍍條件以與實施例相同 之方法進行。Made of Ti (l50 nm). Comparative Example (Comparative Example 1-6) Ge powder, in powder, sb powder, and Te powder having a purity of 5 Ν (99·999%) were prepared, and the powders were Ge(a)-In(/3)-Sb(y). -Te composition is combined and dry-mixed, and then synthesized in an ampoule. The obtained ingot is pulverized to a predetermined particle size and then filled into a graphite mold at a temperature of 6 〇〇〇 c and a pressure of i5 〇 kg/cm 2 . Conditions are hot pressed. 11 1288180 The sintered body is subjected to final finishing to form a target. The relative density of the target was 99% (100% density was 5.54 g/cm3). The sample density obtained at any three of the targets was measured by the Archimedes method. Furthermore, in the same composition, the content and implementation of Te content 6 (at%), oxygen content (wtppm), particle size (//m), Fe content, CNR (dB), DOW, and particles generated during sputtering For comparison, see Table 1. Further, the CNR (dB) measurement value, the DOW measurement value, and the sputtering condition of the evaluation sample were carried out in the same manner as in the examples.

表1Table 1

5 at% 氧 wtppm 粒徑 μτη Fe wtppm CNR dB DOW 100次 粒子 實施例1 10.0 780 85 5 50 OK OK 實施例2 15.0 780 88 2 55 OK OK 實施例3 20.0 720 80 2 50 OK OK 實施例4 21.5 750 89 2 45 OK OK 實施例5 17.0 1300 87 2 50 OK OK 實施例6 15.0 700 30 2 50 OK OK 實施例7 15.0 450 95 &lt;1 50 OK OK 比較例1 17.0 2000 80 2 45 NG NG 比較例2 17.0 780 200 2 50 OK NG 比較例3 17.0 770 95 120 20 NG OK 比較例4 17.0 2500 80 &lt;1 50 NG NG 比較例5 22.0 770 90 2 20 NG OK 比較例6 5.0 760 90 5 10 NG OK 12 1288180 粒子Ok係表示粒子未達500個/晶圓；NG係表示其 超過5 0 0個/晶圓。 實施例1-6其氧含量在700-1300ppm之範圍内；粒徑 在30-89 /z m; CNR(dB)在45-55之範圍内；DOW、粒子發 生量之判定為OK。 又，關於實施例7，雖然Fe含量&lt;lwtppm，但原料中 所含之氧含量低僅500ppm以下（450wtppm)，故與上述實 施例相同，不論是CNR(dB)、DOW、粒子發生量均良好。 相較於此，由於比較例1之氧含量多達2000ppm，故 DO W、粒子發生量不理想。比較例2其粒徑大達200 /z m ，故粒子之發生量 NG。比較例 3其 Fe含量過多達 120ppm，故DOW變差。比較例4其氧含量多達2500ppm ，且Fe&lt;lppm，故DOW、粒子發生量不理想。在無Fe之 情形下氧含量提高。比較例5由於5為22.0at%造成組成 偏差（過量），故DOW不理想。比較例6由於5為5.0at% 造成組成偏差（過少），故DOW不理想。 如上所述，可知在由Ge( a )-In( /3 )-Sb( 7 )-Te( 5 )合金 所構成之靶材中，Te( 5 )組成之偏差將對光記錄媒體之特 性造成很大之影響。 又，祀之氧含量、粒徑在本發明之範圍中時，具有得 到良好CNR(dB)與DOW、以及抑制粒子發生之效果。再 者，Fe含量會影響氧含量，適當之Fe存在具有抑制濺鍍 時粒子發生之效果。又，可知當在氧含量非常低之情形下 ，與Fe含量無關，均可得到與前述相同之良好結果。 13 1288I8〇 月效果 本發明係適用於光記錄媒體用Ge-In_Sb-Te*金錢鑛 靶、該合金靶之製造方法、以及由該合金所構成之光記= 媒體，該靶在濺鍍時粒子發生量少，可安定地製作品質佳 之薄膜，且減少圮錄位元錯誤的發生並達成高記錄密度。 145 at% oxygen wtppm particle size μτη Fe wtppm CNR dB DOW 100th particle embodiment 1 1 780 85 5 50 OK OK Example 2 15.0 780 88 2 55 OK OK Example 3 20.0 720 80 2 50 OK OK Example 4 21.5 750 89 2 45 OK OK Example 5 17.0 1300 87 2 50 OK OK Example 6 15.0 700 30 2 50 OK OK Example 7 15.0 450 95 &lt;1 50 OK OK Comparative Example 1 17.0 2000 80 2 45 NG NG Comparative Example 2 17.0 780 200 2 50 OK NG Comparative Example 3 17.0 770 95 120 20 NG OK Comparative Example 4 17.0 2500 80 &lt;1 50 NG NG Comparative Example 5 22.0 770 90 2 20 NG OK Comparative Example 6 5.0 760 90 5 10 NG OK 12 1288180 The particle Ok indicates that the particles are less than 500 wafers/wafer; the NG system indicates that it exceeds 500 wafers/wafer. Example 1-6 has an oxygen content in the range of from 700 to 1300 ppm; a particle size of from 30 to 89 /z m; and a CNR (dB) in the range of from 45 to 55; and the DOW, particle generation amount is judged to be OK. Further, in Example 7, although the Fe content was &lt; 1 wtppm, the oxygen content contained in the raw material was as low as 500 ppm or less (450 wtppm), so that the CNR (dB), DOW, and particle generation amount were the same as in the above examples. good. On the other hand, since the oxygen content of Comparative Example 1 was as high as 2,000 ppm, the amount of DO W and the amount of particles generated was not satisfactory. In Comparative Example 2, the particle diameter was as large as 200 /z m , so the amount of particles generated was NG. In Comparative Example 3, the Fe content was as high as 120 ppm, so the DOW deteriorated. In Comparative Example 4, the oxygen content was as high as 2,500 ppm, and Fe &lt; 1 ppm, so the amount of DOW and particles generated was not satisfactory. The oxygen content is increased in the absence of Fe. In Comparative Example 5, the composition deviation (excess) was caused by 5 being 22.0 at%, so DOW was not preferable. In Comparative Example 6, since the composition variation (too small) caused by 5 being 5.0 at%, DOW was not preferable. As described above, it is understood that in the target composed of the Ge(a)-In(/3)-Sb(7)-Te(5) alloy, the deviation of the composition of Te(5) will cause the characteristics of the optical recording medium. Great impact. Further, when the oxygen content and the particle diameter of ruthenium are within the range of the present invention, it has an effect of obtaining good CNR (dB) and DOW, and suppressing the occurrence of particles. Further, the Fe content affects the oxygen content, and the presence of appropriate Fe has the effect of suppressing the occurrence of particles upon sputtering. Further, it can be seen that when the oxygen content is extremely low, the same good results as described above can be obtained regardless of the Fe content. 13 1288I8 〇月效果效果 The present invention is applied to a Ge-In_Sb-Te* money ore target for an optical recording medium, a method for producing the alloy target, and an optical record = medium composed of the alloy, the target particle during sputtering With a small amount of production, it is possible to stably produce a film of good quality, and to reduce the occurrence of erroneous bit errors and achieve high recording density. 14

Claims (1)

1288 93110820 號（96 年8 月修正） 拾、申請專利範圍： 1·一種光記錄媒體用Ge_In_Sb_Te合金濺鍍靶，係由 Ge(o: ) In(/3 ) Sb(r )-Te(5 )合金所構成之乾，其特徵在於： 當各成分組成比α、万、r，子％)合計為ι〇〇時 ，〇.心 $ iG、G]以錢、_ r ㈣、i()y 氧含量在15()()Ppm以下，且該乾之結晶平均粒度在⑽ m以下。 2.如申叫專利靶圍第i項之光記錄媒體用Gqn-ShTe 合金濺鍍靶，其氧含量在8〇〇ppm以下。 3·如申請專利範圍第1或2項之光記錄媒體用Ge_In_ ^合金濺鍍無，該乾之結晶平均粒度在5〇…下。 4. 如申請專利範圍第1或2項之光記錄媒體用Ge_In_ Sb-Te合金濺鍍靶，其鐵含量為 5. 如申請專利範圍第3項之光記錄媒體用 合金濺鍍靶，其鐵含量為1〜10〇ppm。 6. 一種Ge-In.sb-Te合金構成之光記錄媒體， a )-In(/S )-Sb((r )_Te((5 )合全 徵在於： 所構成之光記錄媒體，其特 當：成分組成❹十”以原輝計為⑽時 10、°.匕 h 10、6〇$ r 請、10“ &lt;22 , 氧3里在lSOOppm以下。 7. 如申請專利範圍第6項之〜七孤 記錄媒體，其氧含量在8〇〇ppm以下。 構成之光 151288 93110820 (revised in August 1996) Pickup, patent application scope: 1. A Ge_In_Sb_Te alloy sputtering target for optical recording media, consisting of Ge(o: ) In(/3 ) Sb(r )-Te(5 ) The dryness of the alloy is characterized in that: when the composition ratio of each component is α, 10,000, r, and the percentage of the total amount is ι〇〇, 心.心 $ iG, G] is money, _ r (four), i () y The oxygen content is below 15 () () Ppm, and the dry crystal has an average particle size of (10) m or less. 2. For the Gqn-ShTe alloy sputtering target for optical recording media of the i-term of the patent target, the oxygen content is below 8 〇〇ppm. 3. The optical recording medium of claim 1 or 2 is not sputtered with Ge_In_^ alloy, and the average crystal grain size of the dried crystal is 5 Å. 4. The Ge_In_Sb-Te alloy sputtering target for an optical recording medium of claim 1 or 2, wherein the iron content is 5. The alloy sputtering target for an optical recording medium of claim 3, the iron thereof The content is 1 to 10 〇 ppm. 6. An optical recording medium composed of a Ge-In.sb-Te alloy, a)-In(/S)-Sb((r)_Te((5) is characterized by: an optical recording medium composed of When: the composition of the composition ❹ 10" in terms of the original glory is (10) 10, ° 匕 h 10, 6 〇 $ r please, 10 " &lt; 22, oxygen 3 in the lSOOppm or less. 7. If the scope of application for patents 6 ~ Seven isolated recording media, the oxygen content of which is below 8 〇〇 ppm.
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