1287591 九、發明說明： 【發明所屬之技術領域】 本發明係關於電化學電鍍領域，特別是關於—種電化學電鍍震 置，其具有線上即時回饋系統’藉以均勻地在半導體基底表面上 沈積電鍍金屬。 【先前技術】 電化學電鑛（EleetnjehemiealPlating)是將化學溶液電解質 中的銅轉移到晶圓的表面（陰極），做出重複、無空洞、且能立 即進行化學機械研磨的:薄膜，以提供最大的製造良率和生產力。 一般而言，表面上形成有晶種層的晶圓沈浸在電鑛溶液中，在電 鍍反應容器的底部則設有陽極，提供電化學電鍍所要的電位勢能。 隨著導線結構進入次微米時代，對於銅金屬電化學電鍍技術 的挑戰也與日俱增；如為避免線路（lines)或導電區（vias)在沈 積的過程中出現空洞，在充填這些溝槽時，就必須由下而上處理； 而且其沈積在晶圓表面上的薄膜，也必須非常均勻，厚度差異必 須控制在一個百分點（一個sigma)或是更小的範圍内；另一方面， 在進行電化學電鍍時，更必須精確地控制銅的沈積速率，以符合 晶片製造商的量產經濟效益。 1287591 許多年來’為了改善電鍍金屬薄膜的均勾性 二良電鐘過程中沈浸在電鍵溶液中的基底表面的電二 衣置’例如擴散器（碰嫩），其係平放設置在電鑛反庫 容裔中’用峨_溶液的均勻流動。此外，亦有將陽極設計 分割成不_塊，例如許多⑽馳的環狀陽極鴻，將其分別 操作在不同的電位勢能。 ，然而’上述的習知技藝所能獲得的電鍍金屬薄膜均勻性的改 善程度健有限’這—方面是由於這些習知技藝絲能在線上即 時地控制金屬電鍍狀態。 【發明内容】 據此，本發明之目的即在提供一種改良之電化學電鍍裝置，其 具有線上即日彳回齡統，藉以均自地在半導縣絲面上沈積電 鍍金屬。 根據本發明之較佳實施例，本發明提供_種電化學電鑛系統， 包含有-上部組件，用以上載以及欧晶圓；一電鏡反應容器， 其用以承裝電鍵溶液；—陽極陣列，包含有複數個呈同心圓排列 之陽極减區塊電極；—電祕I魏，包含有減個次控制單 凡’其乃分別用來控制前述的陽極·大區塊電極在電鍍操作時的 1287591 個別電位勢能大小；以及複數個相對應於前述的極環狀區塊電 極之感應器元件設置於該上部組件内，射在電鍍操作時，該複 數個感應器元件係職線上即時地將表面沈積輪雜祕送回饋 到一控制單元。 ^為了使貴審查委員能更近-步了解本發明之特徵及技術内 谷，請參閱以下有關本發明之詳細說明與附圖。然而所附圖式僅 供參考與說明用，並非用來對本發明加以限制者。 【實施方式】 請參閱第1圖，其緣示的是根據本發明較佳實施例之具有線上 即時回饋系統之電化學電鍍裝置1〇示意圖。如第！圖解，電化 學電難置^)包括有—上部馬達組件2G，肋上載錢固定晶圓 八中剷述的上部馬達組件2〇可包含有一驅動馬達（圖未示） 用以驅動晶圓30使晶圓30可依垂直晶圓表面的旋轉轴9〇做旋轉 動作本發明之電化學電鍍裝置1()另包括有_電鍵反應容器， 其用以承裝電鍍溶液42。此外，為簡化說明，電化學電鑛裝置1〇 另可包括有的電鍍溶賴充以及循環祕則不特職示在圖中。 在電鍍反應容器4〇的底部提供有一陽極陣列5〇，其包含有複 數個呈同〜圓排列之陽極環狀區塊電極此外在晶圓3〇 以及前述的陽極陣列5〇之間，另可選擇設置有擴散器4心擴散薄 膜46或遮蔽環48等等物理流控元件。 1287591 月il述的Bail 30係電連接至電源供應系統⑼，使得關能夠 在電鍍過程中扮演陰極的角色。如第〗圖所示，電源供應系統60 純含有複數個次控鮮元60a〜60f，其乃分別用來控制前述的陽 極壤狀區塊電極5Ga〜5_電鑛操作時的個別電位勢能大小。 本毛明之重要特徵在於上部馬達組件20内另外設置有複數個 相對應於urn的陽極環狀區塊電極5Ga〜5Gf之感應器元件糾。 感應器元件裝在晶I] 3G之背面，並隨著晶圓3〇旋轉。 依據本U之車乂佳貫施例，感應器元件s广&可以採用所謂的「艾 迪電流（eddy贿ent)」感應器，或者其它適合的感應器。在電鑛 操作時’前述的感應器元件S广&制以線上即時地將表面沈積輪 廢狀態傳送_顺鮮元7G，例如電腦。而根概應器元件所 偵測並且即時回饋的表面沈積輪廓狀態，前述的控制單元7〇可以 改變個別的缝辦元6Ga〜的雜勢能触，藉歧善電鑛金 屬薄膜的均勻性。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範 圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 1287591 【圖式簡單說明】 第1圖為根據本發明較佳實施例之具有線上即時回饋系統之電 化學電鍍裝置示意圖。 【主要元件符號說明】 10 電化學電鍍裝置 20 上部馬達組件 30 晶圓 40 電鍍反應容器 42 電鍍溶液 44 擴散器 46 擴散薄膜 48 遮蔽環 50 陽極陣列 50a 〜50f 陽極環狀區塊電極 60 電源供應系統 60a 〜60f 次控制單元 70 控制單元 90 旋轉車由 111287591 IX. Description of the Invention: [Technical Field] The present invention relates to the field of electrochemical plating, and more particularly to an electrochemical plating device having an on-line instant feedback system 'to deposit plating uniformly on the surface of a semiconductor substrate metal. [Prior Art] Electrolectic electroplating (Eleetnjehemieal Plating) is the transfer of copper from a chemical solution electrolyte to the surface (cathode) of a wafer, making a repeating, void-free, and immediately chemical mechanical polishing: film to provide maximum Manufacturing yield and productivity. In general, a wafer having a seed layer formed on the surface is immersed in an electromineral solution, and an anode is provided at the bottom of the electroplating reaction vessel to provide a potential potential for electrochemical plating. As the wire structure enters the sub-micron era, the challenge for copper metal electrochemical plating technology is increasing; for example, to avoid the occurrence of voids in the process of deposition or vias during deposition, when filling these trenches, Must be processed from the bottom up; and the film deposited on the surface of the wafer must also be very uniform, the thickness difference must be controlled within one percentage point (one sigma) or less; on the other hand, electrochemical When plating, it is necessary to precisely control the deposition rate of copper to meet the mass production economics of the wafer manufacturer. 1287591 For many years, in order to improve the uniformity of electroplated metal film, the second surface of the substrate is immersed in the surface of the electric contact solution, such as a diffuser (such as a diffuser), which is placed flat in the electric mine. The uniform flow of the solution in the reservoir. In addition, the anode design is also divided into non-blocks, such as a plurality of (10) chis-ring anodes, which are operated at different potential potentials, respectively. However, the degree of improvement in the uniformity of the electroplated metal film which can be obtained by the above-mentioned prior art is limited. This is because these conventional art wires can control the metal plating state on the line. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an improved electrochemical plating apparatus having an on-line, day-to-day system for depositing electroplated metal on the surface of a semi-conducting county. According to a preferred embodiment of the present invention, the present invention provides an electrochemical electric ore system comprising: an upper component for uploading and an EVA wafer; an electron microscope reaction vessel for carrying a key solution; , comprising a plurality of anode sub-block electrodes arranged in a concentric circle; - the electric secret I Wei, comprising a sub-control unit, which is used to control the anode-large block electrode in the electroplating operation, respectively 1287591 The magnitude of the individual potential energy; and a plurality of sensor elements corresponding to the aforementioned pole-shaped block electrodes are disposed in the upper component, and the plurality of inductor elements are on the line immediately in the plating operation The deposition wheel is sent back to a control unit. In order to enable the reviewing committee to get closer to the features and technical aspects of the present invention, please refer to the following detailed description of the invention and the accompanying drawings. The drawings are to be considered in all respects as illustrative and not limiting. [Embodiment] Referring to Figure 1, there is shown a schematic view of an electrochemical plating apparatus having an on-line instant feedback system in accordance with a preferred embodiment of the present invention. As the first! The upper motor assembly 2 includes an upper motor assembly 2G, and the upper motor assembly 2 includes a drive motor (not shown) for driving the wafer 30. The wafer 30 can be rotated according to the rotation axis 9 of the vertical wafer surface. The electrochemical plating apparatus 1 () of the present invention further includes a --key reaction container for receiving the plating solution 42. In addition, in order to simplify the description, the electrochemical electroplating apparatus 1 〇 may include some electroplating dissolving charge and the circulation secret is not shown in the figure. An anode array 5〇 is provided at the bottom of the electroplating reaction vessel 4〇, and includes a plurality of anode annular block electrodes arranged in the same circle, and is further disposed between the wafer 3〇 and the foregoing anode array 5〇. A physical flow control element such as a diffuser 4 core diffusion film 46 or a shadow ring 48 is selected. The Bail 30 series of 1287591 il is electrically connected to the power supply system (9), which enables the role of the cathode to function as a cathode during the electroplating process. As shown in the figure, the power supply system 60 is purely composed of a plurality of sub-control elements 60a to 60f, which are respectively used to control the individual potential potential energy of the anode magnetic block electrode 5Ga~5_electron operation. . An important feature of the present invention is that the upper motor assembly 20 is additionally provided with a plurality of sensor element corrections corresponding to the anode annular block electrodes 5Ga to 5Gf of urn. The sensor element is mounted on the back side of the crystal I] 3G and rotates with the wafer 3〇. According to the embodiment of the present invention, the sensor element s wide & can use the so-called "eddy current" sensor, or other suitable sensor. In the operation of the electric ore, the aforementioned sensor element S is widely used to instantaneously transfer the surface deposition waste state to the fresh state 7G, such as a computer. The surface deposition profile state detected by the root profiler component and immediately fed back, the aforementioned control unit 7〇 can change the heterogeneous energy touch of the individual stitching elements 6Ga~, and the uniformity of the metal film of the hybrid electric metal. The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should fall within the scope of the present invention. 1287591 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of an electroless plating apparatus having an online instant feedback system in accordance with a preferred embodiment of the present invention. [Main component symbol description] 10 Electrochemical plating device 20 Upper motor assembly 30 Wafer 40 Electroplating reaction vessel 42 Plating solution 44 Diffuser 46 Diffusion film 48 Shield ring 50 Anode array 50a ~ 50f Anode ring block electrode 60 Power supply system 60a ~ 60f times control unit 70 control unit 90 rotating car by 11