J287585 % 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種磁控及非平衡式磁控物理濺鍍化⑶（氮碳化锆)於 微型鑽頭之方法，特別是指一種應用於0.25刪以下之細微鐵頭，能增加 ^ 鑽頭本身之硬度、耐磨耗度，表面的光滑度、以及排屑能力，使其能夠延 長鑽頭使用的壽命的一種磁控及沖平衡式磁控物理錢鍍ZrCN於〇· 25隨以 下之細微鑽頭之方法。 【先前技術】 現今為對應印刷電路板基板(Printed Circuit Board, PCB)材料的多 ^ 樣化、高多層化、高密度化的市場環境變化，於新開發之電路板上的微小 細孔，其直徑通常為〇.〇5刪到0.25讓之間，而此種微小細孔乃需仰仗高 精密之微型鑽頭予以鑽設成形。 在目前這環境下PCB對微型鑽頭的要求也就越來越嚴苛，因此利用鍍 φ 膜技術的超硬膜可讓微型鑽頭達到最佳的工作實施。而目前的超硬膜都是 使用電弧式物理沉積濺鍍來鍍上去的，但是此種的濺鍍方式因能量高、沉 積顆粒大、表面粗糙度大，故只適合使用於較不注重表面光滑度的大型工 > 件，如直徑0.5刪以上之鑽頭或銑刀，因此對於表面粗糙度有嚴格需求的 . 工件而言，電弧式物理沉積濺鍍並無法達到其所需的要求。 因此如何讓微型鑽頭的表面硬度提昇，增加磨耗性、讓表面的光滑度 更加平滑以及增長微型鑽頭的使用年限，是目前業界最為迫切的需求。但 目前並未有一套鍍膜製程能成功的在微型鑽頭上鍍上附著力佳的超硬膜。 5 1287585 本案發明人有鑑於習知之缺失，乃亟思加以研究，終能構思一良善的 解决方案，期能提供業界更為方便實用的鑛膜製程方法。 【發明内容】 爰疋，本發明之主要目的係提供一種磁控及非平衡式磁控物理濺鍍J287585 % Nine, invention description: [Technical field of invention] The present invention relates to a method for magnetically controlled and unbalanced magnetron physical sputtering (3) (zirconium nitride) to a micro drill bit, in particular to one application. 0.25 Delete the following fine iron head, which can increase the hardness and wear resistance of the drill bit, the smoothness of the surface, and the chip removal ability, so that it can extend the life of the drill bit. The method of depositing ZrCN with 细·25 with the following fine drill bit. [Prior Art] Nowadays, in order to respond to changes in the market environment of printed circuit board (PCB) materials, the micro-holes on newly developed circuit boards are The diameter is usually between 〇.〇5 and 0.25, and the tiny holes need to be drilled by high-precision micro drills. In today's environment, PCBs are becoming more and more demanding on micro-drills. Therefore, the ultra-hard membranes coated with φ membrane technology can make micro-drills achieve the best work. The current superhard membranes are plated by arc-type physical deposition sputtering, but the sputtering method is suitable for use with less emphasis on smooth surface due to high energy, large deposited particles and large surface roughness. Large-scale workpieces, such as drills or milling cutters with a diameter of 0.5 or more, are therefore strictly required for surface roughness. For workpieces, arc-type physical deposition sputtering does not meet its required requirements. Therefore, how to increase the surface hardness of the micro drill bit, increase the wearability, smooth the surface smoothness and increase the service life of the micro drill bit is the most urgent demand in the industry. However, there is currently no coating process that successfully coats the micro drill with a super-adhesive film with good adhesion. 5 1287585 The inventor of this case, in view of the lack of knowledge, is studying it and finally conceiving a good solution, which can provide a more convenient and practical method of mineral film processing in the industry. SUMMARY OF THE INVENTION The main object of the present invention is to provide a magnetically controlled and unbalanced magnetron physical sputtering.
ZrCN(氮碳化錯)於微型鑽頭之方法，纟主要目的係利用磁弧的方式來將超 硬膜濺鍍到微型綱上，以達到增加鑽頭本身之硬度、财磨耗度，表面的 φ 光滑度、以及排屑能力，使其能夠延長鑽頭使用的壽命。本發明之濺鍍製 程如下所示： — 第一階段：將微型鑽頭(微型鑽頭）戴入治具中。 第一 1¾奴·將治具置於濺鍵爐内，並進行抽真空到6xl〇_3Pa範圍之間，然 後再利用電熱器將濺鍍爐内的工作溫度加熱至训。〇〜洲〇。〇 中。（本製程溫度相較於傳統的製程溫度為低，使其能大大縮 短加熱時間，本製程的加熱時間只需要傳統製程的二分之一即 B 可加熱完成。） 第二階段··啟動高電壓電源供應器（High Voltage Power Supply，HVPS) 施予300〜1400伏特之負電壓， '第四階段··即是進行離子轟擊，施予離子1500〜2500伏特的正電壓，並 且利用離子與HVPS的負偏壓（3〇〇〜14〇〇伏特）的交集，使其能 幵>成一 3000伏特以上的高電壓，以分階段的方式來進行離子 爲擊，以去除微型鑽頭表面的氧化層。（利用本發明之分階段 離子轟擊，可去除微型鑽頭表面的雜質及毛邊、使微型鑽頭的 表面更加平整、並增加微型鑽頭表面的附著力。 第五階段：之後再利用磁弧(Magnetron Sputtering Sources)來濺射鍍膜 於微型鑽頭表面上。本發明係利用磁弧濺射鍍膜，使其成為一 多層膜層，而其中該多層膜層的沈積順序（由下往上）即為 Ti (鈦)々Ti(鈦)+Zr(鍅)+Zr(錯)+ZrN(氮化錯)->ZrCN(氮碳 化锆)依該沈積順序來將靶材鍍膜到微型鑽頭上。以Ti作為介 層，來連結底材及硬膜膜層，可增加ZrCN的附著力。在鍍巧 及Ti+Zr時，參考電壓會加大，以達到增加膜層的附著力。並 且在使用乾材Ti與Zr時，並不須藉由其他貴重金屬來做為介 質，可直接將靶材鍍膜到微型鑽頭上。再使用磁弧槍及非平衡 式磁弧槍，兩者利用陰陽磁場交互磁撞，使其產 生大里粒子濃度’來加速薄膜的沈積。 第^、階段··再來係將微型鑽頭冷卻。由於工作溫度（9〇〇c〜3〇〇。〇不是很 咼，所以可以採用自然冷卻法，無須使用其它物質來做輔助。 第七階段··最後將微型鑽頭從治具中卸載下來，即完成整侧膜的流程。 利用本發明之磁控及非平衡式磁控物理濺鑛ZrCN(氮碳化錯)於微型鑽 碩之方法係_磁弧來鍍膜，故微型鑽稱摩擦系數會很小、表面粗縫度 也會大大的降低，且磁弧鍍膜的成長粒子十分微小，所以可形成較緻密的 沈積堆疊，因此微型鑽頭表面硬度會提高，且内應力會增強。 【實施方式】 •1287585 請參閱圖一所示，係為本發明之濺鍍製程方法流程圖。其濺鍍製程之 方法如下： . a·將微型鑽頭戴入治具中i。 b·將治具置於濺鍍爐内，並進行抽真空2至6x1 〇-3pa範圍ZrCN (nitrogen carbonization) is a method of micro-drills. The main purpose of ZrCN is to use a magnetic arc to sputter superhard film onto a micro-frame to increase the hardness of the bit itself, the wear and tear, and the surface φ smoothness. And the ability to remove chips, which can extend the life of the drill. The sputtering process of the present invention is as follows: - Stage 1: A micro drill (micro drill) is worn into the fixture. The first 13⁄4 slaves were placed in a splash-type furnace and evacuated to a range of 6xl〇_3Pa, and then the operating temperature in the sputtering furnace was heated to the training by an electric heater. 〇~洲〇. 〇 Medium. (The process temperature is lower than the traditional process temperature, which can greatly shorten the heating time. The heating time of this process only needs one-half of the traditional process, that is, B can be heated.) The second stage··start high The High Voltage Power Supply (HVPS) applies a negative voltage of 300 to 1400 volts, 'the fourth stage is to perform ion bombardment, apply a positive voltage of 1500 to 2500 volts, and utilize ions and HVPS. The intersection of the negative bias (3〇〇~14〇〇V) enables it to 成> into a high voltage above 3000 volts, in a phased manner to strike the ion to remove the oxide layer on the surface of the micro drill . (Using the staged ion bombardment of the present invention, impurities and burrs on the surface of the micro drill bit can be removed, the surface of the micro drill bit can be made flatter, and the adhesion of the surface of the micro drill bit can be increased. Stage 5: Reusing the magnetic arc (Magnetron Sputtering Sources) Sputter coating on the surface of the micro drill. The present invention utilizes magnetic arc sputtering to form a multilayer film, wherein the deposition order of the multilayer film (from bottom to top) is Ti (titanium) 々Ti(titanium)+Zr(鍅)+Zr(error)+ZrN(nitridation)->ZrCN (zirconium nitride) is applied to the micro drill bit in this deposition sequence. Layer, to join the substrate and the hard film layer, can increase the adhesion of ZrCN. In the plating and Ti + Zr, the reference voltage will increase to increase the adhesion of the film. Zr does not need to use other precious metals as the medium, and can directly coat the target onto the micro drill. Then use the magnetic arc gun and the unbalanced magnetic arc gun, the two use the yin and yang magnetic field to interact magnetically, so that It produces a large particle concentration 'to accelerate the deposition of the film. Stage··Relaying the micro drill bit. Because of the working temperature (9〇〇c~3〇〇. It is not very sturdy, so you can use the natural cooling method without using other substances to assist.) The seventh stage··The last Unloading the micro drill bit from the jig, that is, completing the process of the entire side film. Using the magnetic control and unbalanced magnetron physical splashing of the present invention, ZrCN (nitrogen carbonization error) is used in the micro-drilling method. Coating, so the micro-drilling coefficient will be small, the surface roughness will be greatly reduced, and the growing particles of the magneto-arc coating are very small, so a dense deposition stack can be formed, so the surface hardness of the micro-drill will increase, and [Embodiment] • 1287585 Please refer to Figure 1 for a flow chart of the sputtering process of the present invention. The method of the sputtering process is as follows: a. Put the micro drill into the fixture i b. Place the fixture in the sputtering furnace and evacuate 2 to 6x1 〇-3pa
， 之間’然後再用電熱器將濺鍍爐内的工作溫度加熱21至90°c〜300°C . 之間。 I c·啟動咼電壓電源供應器⑻忌匕v〇ifage p〇wer sUppiy，pps)3施予 300〜1400伏特之負偏壓。 d·進行離子轟擊4，施予離子15〇〇〜2500伏特的正電壓，並且利用離子 的正電壓與HVPS的負偏壓做一交集，使其能形成一 3〇〇〇伏特以上之 同電壓，並以分階段的方式來進行離子轟擊4，以去除微型鑽頭表面 的氧化層。 e·之後再利用磁弧濺射鍍膜5於微型鑽頭表面上，使其成為一多層膜 | 層’其中該多層膜層的沈積順序（由下往上）即為 Τι(歛）+Ti(鈦）+Zr(錯）+Zr(鍅）+ZrN(氮化結）+ZrCN(氮碳化結） 依照該沈積順序來將靶材鍍膜到微型鑽頭上。 ' f•再來係將微型鑽頭冷卻6。 . g•最後將微型鑽頭從治具中卸載下來7。 本發明係利用磁弧來鍵膜，故微型鑽頭的摩擦系數會很小、表面的粗 輪度也會大大轉低’且磁藏賴成錄子十分微小，所以可形成較緻 密的沈積料，因此微蘭_表面硬度會提高，且触力會增強。 8 1287585 請參閱圖二、圖二A所示，在磁弧濺射鍍膜5的階段時，其鑛膜係從 底材56慢慢的由下往上濺射上去，第一層先啟動平衡式磁孤搶⑽仙㈣ Magnetron, BM)來鍍Ti(鈦）5卜因Ti的厚度不需太厚，所以使用βΜ即 可。第二層即是鍍Ti(鈦)+Zr(锆)52，因Zr的需有一定的厚度，所以必需 ^ 要啟動非平衡式磁弧搶(Unbalanced Magnetron，UBM)來鍍Zr(錯），也必 需啟動BM來鍍Ti(銥），兩種磁弧搶需同時敢動。第三層係鍍Zr(锆)53， 所以關閉BM，啟動UBM來做鍍膜的動作。第四層是鍍ZrN(氮化锆)54，啟 > 動UBM來做鍍膜。最後第五層是鍍zrCN(氮碳化锆)55，也是啟動UBM來做 鍍膜。所以由下往上的沈積順序如下所示：Between the 'and then use the electric heater to heat the working temperature inside the sputtering furnace between 21 to 90 ° c ~ 300 ° C. I c · start 咼 voltage power supply (8) 匕 v〇ifage p〇wer sUppiy, pps) 3 to give a negative bias of 300 ~ 1400 volts. d. Perform ion bombardment 4, apply a positive voltage of 15 〇〇2 to 2500 volts, and use the positive voltage of the ion to make an intersection with the negative bias of HVPS, so that it can form a voltage of more than 3 volts. Ion bombardment 4 is performed in a phased manner to remove the oxide layer on the surface of the micro drill bit. Then, the magnetic arc sputtering coating 5 is applied to the surface of the micro drill bit to make it a multilayer film | layer 'where the deposition order of the multilayer film layer (from bottom to top) is Τι (convex) + Ti ( Titanium) + Zr (wrong) + Zr (鍅) + ZrN (nitriding junction) + ZrCN (nitrogen carbonization junction) The target is coated onto the micro drill according to the deposition sequence. ' f• Then come to cool the micro drill bit 6 . g• Finally unload the micro drill from the fixture7. The invention utilizes a magnetic arc to bond the film, so the friction coefficient of the micro drill bit will be small, the coarse rotation of the surface will be greatly reduced, and the magnetic recording is very small, so that a dense deposition material can be formed, so Blue _ surface hardness will increase, and the contact will increase. 8 1287585 Please refer to Fig. 2 and Fig. 2A. At the stage of magnetron sputtering coating 5, the ore film is slowly sputtered from the bottom of the substrate 56 from the bottom to the top. Magnetic solitary (10) cents (four) Magnetron, BM) to plate Ti (titanium) 5 Bu because the thickness of Ti does not need to be too thick, so use β Μ. The second layer is Ti (titanium) + Zr (zirconium) 52. Because Zr needs a certain thickness, it is necessary to start the unbalanced magnetic arc (UBM) to plate Zr (wrong). It is also necessary to start the BM to plate Ti (铱), and both magnetic arcs need to be dazzled at the same time. The third layer is plated with Zr (zirconium) 53, so the BM is turned off and the UBM is activated to perform the coating operation. The fourth layer is plated with ZrN (zirconium nitride) 54, and the UBM is used for coating. The final fifth layer is plated with zrCN (zirconium nitride) 55, which is also used to start UBM coating. So the order of deposition from bottom to top is as follows:
Ti(鈦)51+Ti(鈦)+Zr(锆)52+Zr(锆)53+ZrN(氮化锆)54+ZrCN(氮碳化 錯)55 ’依序形成一個附著力良好之多層膜層。 【圖式簡單說明】 圖一所示，係為本發明之濺鍍製程方法流程圖。 圖二所示，係為本發明之磁弧濺射鍍膜之流程示意圖。 圖二A所示，係為本發明之多層膜層示意圖。 【主要元件符號說明】 1微型鑽頭戴入治具中 2抽真空 21加熱 3啟動HVPS 4離子轟擊 5磁弧濺射鍍膜 51 Ti(鈦） 9 -1287585 52 Ti (鈦)+Zr(鍅） 53 Zr(锆） 54 ZrN(氮化锆） 55 ZrCN(氮碳化锆） 56底材 6冷卻 7微型鑽頭從治具中卸載下來Ti (titanium) 51 + Ti (titanium) + Zr (zirconium) 52 + Zr (zirconium) 53 + ZrN (zirconium nitride) 54 + ZrCN (nitrogen carbonization error) 55 ' sequentially form a multilayer film with good adhesion . BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a flow chart of the sputtering process of the present invention. 2 is a schematic flow chart of the magnetic arc sputtering coating of the present invention. 2A is a schematic view of a multilayer film layer of the present invention. [Main component symbol description] 1 Micro drill bit into the fixture 2 Vacuum 21 Heating 3 Start HVPS 4 Ion bombardment 5 Magnet arc sputter coating 51 Ti (titanium) 9 -1287585 52 Ti (titanium) + Zr (鍅) 53 Zr (zirconium) 54 ZrN (zirconium nitride) 55 ZrCN (zirconium nitride) 56 substrate 6 cooling 7 micro drill bit unloaded from the fixture
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