TWI284919B - High-pressure processing chamber for a semiconductor wafer - Google Patents

Abstract

A processing chamber having an improved sealing means is disclosed. The processing chamber comprises a lower element, an upper element, and a seal energizer. The seal energizer is configured to maintain the upper element against the lower element to maintain a processing volume. The seal energizer is further configured to generate a sealing pressure in a seal-energizing cavity that varies non-linearly with a processing pressure generated within the processing volume. In one embodiment, the seal energizer is configured to minimize a nonnegative net force against one of the upper element and the lower element above a threshold value. The net force follows the equation P1*A1 - P2*A2, where P1 equals the sealing pressure, P2 equals the processing pressure, A1 equals a cross-sectional area of the seal-energizing cavity, and A2 equals a cross-sectional area of the processing volume.

Description

1284919 IX. Description of the Invention: [Technical Field of the Invention] The present invention is a continuation of the application of U.S. Application No. 10/364,284, the name of which is "High-Pressure Processing Chamber for a Semiconductor Wafer" (High-voltage processing chamber for semiconductor wafers), and its filing date is February 10, 2003, which is hereby incorporated by reference. The present invention relates to the technical field of processing chambers, and more particularly to a method and system for reliably sealing a high pressure processing chamber. [Prior Art] = ¥ Body $ is manufactured by placing it in a processing chamber, where the device layer is removed, the processing residue is removed, and the processing steps on the semiconductor device. In addition, there are some processing chambers and pressure-clearing conductor wafers. The team includes the upper and lower components. When two components are connected to each other, and the wafer is processed, it is located in this 5 mile space. It is very important to keep the seal, because it is only in the seal or i: the ϋ can maintain the correct operating state, such as high pressure, atmospheric pressure, and the treatment will also be exposed Make: (4) is in the processing room. It becomes unusable in the second thing, and (6) is imported when it is processed ^. Sex materials, etc., will not be released to the surrounding environment. The two-door hunting scorpion produces a seal force that counteracts the opening in the processing chamber, and the effect of opening the if force is forced to force the upper and lower components to separate. Handling space for bad. The sealing force can be maintained by the hydraulic working piece before the Jiang is not affected by the sealing force, and the processing force can be set to the maximum achievable processing force. Even if this is up to the 'sealing force is maintained, only the small part of the full processing cycle is processed to have many disadvantages. First, after repeated application of the sealing force, the 1284919 = the highest achievable sealing force for a non-essential long-term sealing element is prone to failure. The large contact force on the second 'sealing surface' creates particulate matter that can be introduced into the processing space and contaminate the wafer. Third, equipment used to pressurize hydraulic fluid adds to the cost of the processing system because it is used to seal the process chamber rather than processing the wafer. The fourth system designed to replace hydraulic parts with supercritical parts using supercritical processing materials is quite expensive. These systems also require complex recycling techniques because the supercritical material must be expanded and pressurized before it can be reused. ...so, we need a processing system that: (1) does not need to continue to over-tighten the force to maintain a processing space, and (2) reduces the amount of contaminants that may be introduced into the processing space' (3) The components in process to maintain the seal of the process space, and (4) use a smaller energy supply space to allow the processing system to operate more tightly and more efficiently. SUMMARY OF THE INVENTION The present invention is directed to a semiconductor processing system that maintains a processing space using a sealing pressure that follows the rules for maintaining an optimal seal. In a first aspect of the invention, a semiconductor processing system includes an upper component, a lower component, and a sealing implement. The upper and lower members are designed to be joined to each other to form a process space. The seal is strengthened to hold the upper member against the lower member to maintain the processing space. The seal is used to control the seal pressure in the seal strengthening chamber, sealing the chamber to a non-linear change with the processing pressure created in the process space. ^Inventive-implementation, the seal is strengthened so that the non-negative net force is above the value and minimizes the net force. This non-negative net force acts on the upper element and the = part. The net force can be expressed by the equation p_-mA2, where ρι 5m force, P2 is the reliance force, the area of the A1 domain reliance key chamber, and the cross-sectional area of the Λ Γϋ 。. The difficult case is that the seal strengthener is maintained in a substantially constant condition. The seal strengthener is preferably packaged in a chamber to seal the chamber. The first chamber is connected to the seal-enhanced chamber intensifier such that the first pressure generated in the first chamber produces a second duty in the seal strengthening chamber to the middle, preferably a cross-sectional area of 1284919 A1 Greater than the cross-sectional area A2. In another embodiment, the system further includes a tool for generating a supercritical condition, the tool being coupled to a processing space. This system also includes a C〇2 supply container that is connected to the processing space. Preferably, the upper and lower elements form a supercritical process. The helium and seal strengthening chamber may further comprise a hydraulic piston connected to the lower forest to maintain the processing space. A second aspect of the invention is a method of maintaining a processing space that includes generating a process pressure in a process and controlling a seal pressure to create and maintain a process space. In a treatment cycle, the seal pressure changes nonlinearly with the process pressure. Preferably, the sealing pressure is related to the processing pressure obtained by the following formula: ΔF = P1 * A1 - P2 * A2, where π is the sealing pressure, P2 is the processing pressure, and A1 is the transverse of the strengthening chamber The cross-sectional area, and A2 is the cross-sectional area of the processing space. The seal pressure changes (4) above the turn. The cross-sectional area of the processing space is preferably smaller than the cross-sectional area of the initial and sealed strengthening chambers. The step of generating a process pressure is preferably included in the process air (four) having a treatment fluid. The high pressure treatment fluid can contain = boundary carbon dioxide. (d) The step of sealing the pressure preferably includes generating a hydraulic pressure therein. [Embodiment] The present invention relates to a process in which a circle that is efficient during processing of a workpiece is processed in a processing chamber, which is: through a processing space, which maintains a seal with a minimum force.尽 尽 Γ 1 Processing pressure means that it may change during the processing of the processing space during device processing. "Processing force" means the pressure generated by the Department in the seal strengthening chamber (described below) "Sm^". According to the present invention, the sealing force and the treatment force are balanced and are "maintained and treated at 1284919". I have a space, the sealing force must be slightly larger than the processing force. s two tr two different, often, "processing space seal" = and the seal is made by the embodiment of the surface of the (four) component by balancing the treatment Sealing the way of force to achieve the realization of the miscellaneous, is to borrow the space _ one on the second (±53 匕 cavity to the side of the surface area is larger than the treatment

^ Process [force and phase difference - a large enough value. In this way, the sealing pressure required to handle the force of the two high forces is pre-added J = ϊ; slightly larger than the processing force. Ϊ́ϊϊϊ^ΓΓ维ί: Therefore, the sealing pressure varies with the processing pressure. Force balance Since the contact force of the sealing surface does not become excessive, the ΪΞΙΪϋίΐί surface of the present invention is worn. In addition, the parts subjected to the balanced application are not operative to withstand all the forces of the sealing pressure: this balances the sealing force of the treatment force. However, the embodiment of the present invention is also prevented from damaging the equipment. Words or other foreign objects are inadvertently placed on the seal table, (4) 2 pieces or other external objects, or damage to the processing equipment. Under this condition, the smaller value can be used to damage the work. The embodiment can also be used to seal the chamber leakage gas to fill the sealing liquid at a sealing pressure lower than a critical value, and the processing space is arranged in a predetermined manner = 8 1284919 rows. Therefore, the treated material will not be subjected to the environment. The embodiment of the reinforced 必 必 ΐ 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之Smaller and lower will seal the size of the chamber, so that the processing space has a pressure balance rather than a much higher pressure. Because of the cross-sectional view of the processing assembly (10) of one embodiment of Figure 1 dUi Ming. Under the ^ component of the ^, This position can be placed or removed in half and (b) when (4) is successfully bribed (that is, maintained) to vent, so when the treatment is not maintained at a supercritical pressure, the processing chamber 101 is 171 Live fj72' which divides the cylinder chamber into the upper storage chamber. When the piston P$ h 〇, the aperture, the first end of the guide Ϊ 80 has a porosity, the first of the first conduit 181 The liquid between the chambers 173 is connected to the age of 173 and allows the external source and the lower storage process to 101 to include an upper element 1 1 Π » Μ 12 comprising a platform 120, which will be on the ^ ^ = lower element 150. 110 I, „6 〇=密啦(1). On this side 1284919 is passed through ^^2, 1181, so that the second end of the conduit 181 can also be connected to the space and contain the living protrusion 6. The flat chamber 120 is slidably mounted within the upper member 110. Therefore, as shown in FIG. 1, when the space of the door 2' of the flat chamber 116 is reduced, and the space of the chamber 115 is reduced, and the upper processing is performed, the cross section of the platform 120 is shown. Detailed below. The lower hair 1 is a sealing surface I30 comprising a loose element 131 (such as a 0 ring). The ZA C '/i 70 piece 150 has an upper surface 156 that is coupled to the platform 155. The top view, cross section, and bottom view of the figure are not flat. The stage 120, the Μ[Γτ^μ<3, the platform 120 observed by the chamber 115. Figure 2A also shows a flat 35 which forms the surface of the seal-enhancing chamber jaws. The outer surface of the birch and a corresponding surface area. Fig. 2 shows the platform 120 according to (4), and the cross section of the display station (10) is - type. The inner surface 136 of the platform 120 is not shown. The inner surface 136 is fixed-luxury: ~ "φ °" is located in the processing space (14G, Fig. 3) of the closed position ^ ί shows the sealing surface 13G and the sealed flat figure % shown on the sealing surface 130 The surface of the platform 120 as viewed from the processing space 140 (refer to FIG. 3) is as shown in the 'internal surface 136 and the outer surface 135, and the outer surface of the outer surface 135 is good, as shown in FIG. 2A-C. The surface area of the surface 134 of 134 is greater than the inner surface 136 of arrow 132 = product. In the embodiment, the inner surface 136 and the outer surface 135 are substantially ,, although FIGS. 2A-C depict the platform 12G as a circle, the platform 120

, = shape 'either geometric or non-geometric. Moreover, although, FIG. 2A-CJ to i31 and the combination seal groove (not shown) are circular and located in the flat two-n-into-beta, the six-package element 131 and its combined seal groove may be other shapes. Du He shape or Wei He shape, * and can be recorded in any of the processing systems 1G :: 上 I, for example, the sealing element 131 and its combined sealing groove marks can be located on the surface 156 of the p piece (10) ', The platform (10), the figure or other bits 1284919 HO Γ〇} 100 $ j 1, 40 from the flat, the face 136, the seal ring i3i and the upper surface i56 1 辻 C sense. , T 2 5! is included in the processing space 140. The following steps will be carried out by: (4) strengthening the sound of the chamber and pressing the flat chamber 120 and the sealing ring 131 against the lower member 150 m6 to form a treatment. The processing material is then processed by the human body to process the H-conductor wafer/Ji. According to the invention, the semiconductor wafer can be used in any combination of methods, such as vacuum, low pressure, atmospheric pressure limit: ίίΐ = Lai manufacturing steps Etc., but does not mean that the invention of the invention shows a cross-sectional view of a 188 (Fig. 4) turtle-B and 186 Α-Β, and a 188 Γϋ (10)' feeds the upper element 11G to the lower element 150 to Processing Lang (10). Figure 3 shows the left-hand arm of the 188, a left lower arm, a right upper arm and a right lower arm 186β. The two left arms are used to fasten one side of the sill, and the two right arms are used to fasten the processing room. The other side of 101. The upper left 186A f f left lower arm 185B forms a portion of the left arm 185 (Fig. 4). The right upper arm 86A and the lower right arm 186B form part of the right arm 186 (Fig. 4).徕9^ ί shows the processing chamber 10 and the support assembly 250, wherein the support group Hi, the support assembly (10), Fig. Figure 4 shows that it is located at or close to 1〇1. For simplicity, Figures 4 and 5 do not illustrate the balance cylinder 170 ίο] months '* ^, 181 and 190. Figure 4 shows how the yoke arms 185 and 186 are in the process chamber to tightly connect the upper member 11G to the lower member 15G. As is well known, the 1888ΐ=ϊ 面 188 can have a variety of different configurations. For example, the 'arm 185 is wedge-shaped, so when it moves in the direction indicated by the arrow 2 of FIG. 4, the arm and the lower member 150 push against each other and hold it tightly, when the yokes are separated from each other by the threshold 86 When moving in the direction of the arrow 3, the upper element 110 and the lower element are arbitrarily 1284919. It is also possible to use the structure other than the vehicle to make the upper element 110 tight > For example, it is located in the upper element 110 and the lower element 150, wherein the first element is a machine word screw (T-b〇lt), and the upper element 110 and the lower element 150 are combined: the amount = provides the upper element tightly during processing Water Pliers Display: Branch Building Assembly 'This assembly includes a base 209, a bottom extension 2〇7, a seat 209 and a HI03 and a top extension 2〇5. The bottom extension 207 is connected to and slidably disposed thereon so that the difficulty 188 and the connected ping are adjusted twice as well as the two inf. Clamp 201 and weight 203 S dense g;; the heart provides - additional force to keep the upper element 110 applied and the top extension 205 allows the clip 201 to be in the counterweight and the ancient The processing chamber 101 of FIG. 4 in an open position, the processing chamber 101-11 and the support assembly 250. In FIG. 5, the weight 203 is lifted from the clamp 201' and the light 188 is used to make the conductive wafer can be removed by the gamma; the lower element 150 is removed, the semi-conductor ^ (13图^/^^5^ = motion =. In the action,

IsJ ! JJ 18!Α1Β/σ 186A'B ^ ^ ΐΐιΤτ% 3 = i(1)” stored in 171 and flows into the seal to strengthen the evening T: a liquid other than water, such as oil, is used as a sealing material. It can also be used in accordance with the present invention, and the 秘I secret or non-surface liquid can also be placed in the 'processing assembly 100 in the open position. (9) The room is placed in 'for example' - the processing material is placed in the storage room 173. The processing material may be #刻,刻刻,Supercritical Residual or other residual method. The material may be treated as a material or material device. 2 This 12 1284919 invention In one embodiment, the cleaning material herein is c〇2, which will later become a supercritical state and used to remove photoresist residue on the semiconductor wafer in the processing space 14〇. The conduit 190 is placed into the lower storage chamber 173, which will be covered later. C〇2 passes through the conduit 181 and enters the processing space 14〇. C〇2—but in the processing space 140, a supercritical C〇2 is formed. Supercritical C〇2 can be cycled through processing space 140 on platform 155 Jieyi Semiconductor Wafer. The processing room and the supercritical C〇2 action are described in the following patent: US Patent “Supercritical Processing Chamber for Processing Semiconductor Wafer”, patent number applied on July 24, 2002 US Patent No. 09/912,844; filed on April 10, 2002, 耵§匕1^二如1^ Processing Chamber for Semiconductor Substrate Including

Flow Enhancing Feature, patent number 10/121,791; US Patent Method and Apparatus for Supercritical Processing of a Workpiece, filed November 1, 2000, patent number 09/704, 641. As described above, the present invention confirms that the processing space (140, Fig. 3) is maintained during processing. Figure 6 is a more detailed illustration of the balance cylinder 170 of Figures 1 and 3 showing the balance cylinder when the process space (140 'Figure 3) is maintained, i.e., during normal processing. As described below, according to Figures 6 and 7, the balancing cylinder 170 is used to determine the state in which the processing space 140 is maintained when a semiconductor device is processed in the processing space 140. 171 contains an incompressible liquid 177 such as water or oil. The incompressible liquid crucible 7 flows through the conduit 180 and fills all or part of the seal strengthening chamber (115, Figure 3). Preferably, the seal strengthening chamber (115, Fig. 3) defined by the upper storage chamber ι 71 is separated. Preferably, the cleaning liquid 178, which can be in the super-state, is placed in the conduit 190 where it is fully or partially filled with the storage chamber 173 and placed in the processing space 14 of the closed processing chamber 101. During the period of $, the cleaning liquid 178 becomes supercritical, so that the semiconductor wafer can be cleaned in the processing space. It should be noted that the step of introducing the liquid and turning it into a super-35 or other processing state can be repeated in the processing cycle. Between 1 13 1284919, piston 172 can be used to block aperture 175. The balance cylinder 170 can confirm that the process space 140 is a tight seal. This object is achieved by balancing the process pressure in the process space 140 with the I-block pressure in the seal enhancement chamber 115. In one example, as shown in Figures 3 and 6, the process pressure is greater than the two seal pressures. Since the seal strengthening chamber 115 is connected to the upper chamber looseness 1 through the conduit 18, the pressures of the two are equal; and the processing space 14 is communicated to the lower chamber 173 through the conduit ι 81, and the pressures are equal. Therefore, when the process pressure is greater than the seal pressure, the live j 172 is pushed in the direction of the arrow 4 (Fig. 6). Since the space defined by the upper storage chamber 171 and the seal strengthening chamber (115, Fig. 3) are isolated from each other, the movement in the head 4 direction increases the sealing pressure and reduces the processing pressure. This step continues with the stamen pressure and the back and seal pressures equal or balanced. Similarly, when the process pressure is less than the seal-force, the piston 172 is pushed in the direction of arrow 5 (Fig. 6), reducing the seal, force and increasing the process pressure. Again, this continues until the process pressure and seal pressure are equal or balanced because the liquid in the upper reservoir is incompressible = incompressible. To achieve this, the process pressure is balanced to the seal pressure or following the seal pressure, and the seal pressure does not have to be preloaded to the maximum possible process pressure. Figure 7 is a more detailed illustration of the balance cylinder 17 关 when the seal strengthening chamber (115, Figure 3) does not maintain a suitable pressure. This can cause this situation. For example, the seal enhancement chamber 115 has a leak impervious to the incompressible liquid 177 received from the upper reservoir 171. Alternatively, the upper ΐϊίΓ1 and the seal-enhancing chamber 115 connected thereto may be inadvertently unfilled. In any case, the wire seal strengthening chamber 115 is not sufficient, the sealing pressure is lower than the - turning pressure, and the conductor cleaning procedure is Ϊ. Since the process, such as 140, is not maintained, the processing material 178 t is self-processing space (10), and Figure 3) is a semiconductor. According to an embodiment of the present invention, it can be confirmed that when the #sealing pressure is lower than the -threshold value, the piston 172 moves in the direction of the arrow 4. The venting opening 175 is located in the lower storage chamber 173, and the processing material 1284919 178 is discharged from the venting opening 175 and safely ejected into a volume of gas or other treasury that can store the nucleus. The signal can be used to stop or suspend the processing of the device. Figures 8 to 10 show that in a real chamber containing pressure-increasing rape, the pressure-receiving phase is the same as the sealing pressure. The embodiment of Figures 8-10 is required to generate and maintain a relatively small pressure to produce Some embodiments require less energy and are more prone to processing, such as, and therefore more efficient.

- An incompressible liquid such as water or the like can be pressed to a desired pressure by using - pressure enhancement ^ ^ This can omit high hydraulic equipment. The pressure in the pressure intensifier must be sufficient, and the critical treatment (4) can be turned into a gas in the pressure-enhancing section. Because the critical treatment liquid becomes a gas phase, its density is reduced, and the force required for the pressure to recombine the incompressible liquid to the desired sealing pressure is higher than that of the unreinforced one. This type of construction reduces the expense of having to enter the processing system to transfer the process space to seal the process liquid, increasing the efficiency of the processing system. Figure 8 is a cross-sectional view of a processing assembly 300 that includes a processing chamber and attached spatial components in accordance with the present invention. The processing component comprises a processing chamber 700; - C〇2 supply container 360; - a sealed one _ 34 〇; one water

Catheter 320; - drain 埠 321; air flow action conduits 323, 324, 325, 330, 342 and 343; - water filter 322; - pressure-proportional safety valve 341; an electronic controller 350; pressure transducers 370 and 375; - set point signal source 379; discharge holes 362 ° ° and 371; pressure regulator 352; and pressure relief valve 331. In an embodiment, the electronic controller may be an ER3000 manufactured by Tescom Corporation, ElkRiver, Minnes. The processing chamber 700 includes an upper member 302 and a lower member 3〇4. Upper member 302 has an inner surface 301. The lower member 304 includes an upper space 406, a seal enhancement chamber 410, and a pressure intensifier 908. Lower element 304 includes a table 305. The table 305 has a platform 306 included in the upper space 406 and a 15 1284919 pedestal 980 contained in the seal enhancement chamber 41A. The platform 306 has a rod slidably disposed on the neck 315, and the seat 305 can be slid in the direction indicated by the arrow 6 or in the direction indicated by the arrow 7 = the platform 306 includes a sealing member 520 . Preferably, the sealing member 52 〇 ^ 3 is a gasket of a 0 ring type. In order to make the illustration clearer, the sealing element 52〇 and its partial twist ratio are expressed in an enlarged manner. FIG. 8 further shows the semiconductor wafer 400 placed on the platform 306. As shown in Fig. 8, the water conduit 320 is connected to the air operated valve 323, and the air operated valve is connected to the water filter 322. The water filter 322 is connected to the air operated valve 325, and the air operated valve 325 is connected to the seal strengthening The chamber 41. The drain port 321 is connected to the air operating valve 325, and the air operating valve 325 is connected to the seal strengthening chamber 41. The seal a leak detector 340 is connected to the neck 315 and the piston seal _. Pressure-proportional safety The space 341 is connected to the processing space 51A, the discharge hole 362, the air operating valve 343, and the pressure intensifier 908. The pressure release gate 331 is connected to the discharge hole 370, the air operating valve 330, the pressure transducer 375, and the pressure cooker 352. The operating valve 33 is connected to the pressure intensifier 908, the discharge port 370, the pressure release gate 331, the pressure transducer 375, and the pressure regulator. The electronic controller 35 is connected to the fixed point signal source 37, the force transducer 375, and the pressure. The regulator 352. The C〇2 supply container 360 is connected to the pressure regulator 352 and is connected to the processing space 51A through the air operation valve 343. The discharge hole 371 is connected to the discharge hole 362 by the air operation valve 342. And the pressure-proportional safety is wide 341. The pressure intensifier 908 includes a low pressure chamber 705; the neck portion 303 has a smaller cross-sectional area than the cross-sectional area of the low pressure chamber 705; the piston 31 has a base included in the low pressure chamber 705 392 and a head 391 included in the neck 303; and a piston seal 8 =. The neck 303 is connected to the seal strengthening chamber 41A such that the seal strengthens when the head 391 moves in the direction indicated by the arrow 6. The pressure in the chamber will increase. Preferably, the base 392 has a cross-sectional area that is larger than the cross-sectional area of the head 391. Figure 8 shows the processing chamber 7 in the closed position. The inner surface 301, the sealing member 520, and the inner surface of the platform 306 are defined. As shown in Fig. 8, 1284919 = element 52G is preferably located within the platform 3G6 such that the cross-sectional area of the processing chamber 51() is smaller than the horizontal portion of the flat chamber 306. The cross-sectional area is therefore formed by a process = inner 301 and sealing element 520. U is moved from the inner surface by the sealing member 52 when the base 980 is moved upwards. In the closed position, the space is formed. 510. When the base 9 When the 80 moves downward, the sealing member 52 moves from the table φ 3〇1 to place the processing assembly 3GG in the open position. In the open position, the separation is made so that the semiconductor μ can be released from the flat (four) 6 cake. The semiconductor wafer moves the pedestal 305 and the platform 306. The processing component 3 is thus in the closed position. The pressure can be used to confirm that the semiconductor seal is maintained when the semiconductor ^ = ΪΓ 0 is processed (and The processing space can be processed to form a self-sealing strengthening chamber 410 to bring the crucible to an open position. The semiconductor wafer can then be removed from the platform 306. Devices other than the semiconductor wafer can also be used in accordance with the present invention. During operation, the low pressure water is moved from the water conduit to the sealed reinforced package. Put it in the off position. The low-pressure water self-water conduit 320 ^ is equipped with water immersing device, pipes 915 and 918, air operation 阙 325, temple qsn machine, and sealing chamber 410. When the low pressure water flows into the head 391 and the base, the tempering chamber 410 is sealed. The low-pressure water flows into the seal-enhancing chamber and goes to the I·base _ upwards and shifts the head 391 downwards ^ so that the pedestal _ the door _ the sealing element 520 presses the watch® 301, Therefore, the forming process component is finely located in the closed position. When the position sensor (not etched the flat chamber has moved up to form the processing space 510, and the head 391 to its extreme position (ie, 'opposite the piston seal _, air operation

Slf 325 is closed to separate the seal strengthening chamber 41A (this supply chamber 410 is this 17 1284919. Because of the use of low pressure materials such as low pressure water, a relatively small amount of energy can be utilized to quickly fill the seal strengthening chamber 410. In other words, because of the water In the low pressure state ^ flows into the seal strengthening chamber 41, so that the portion supplying the water does not require additional conversion and maintenance of high pressure water. Compared with a processing assembly that uses a high pressure device to fill the seal strengthening chamber 410 and form the processing space 510 The processing assembly 3 can be more efficient. Once the processing assembly 300 is in the closed position, the low pressure C〇2 gas is self-introduced: the 〇2 supply container 360 is introduced into the low pressure chamber 705. The low pressure c〇2 gas from c〇2 The supply container 36 is passed through the pressure regulator 352, the pipe 901C, the air operated valve 330, the pipe 901A, and then enters the low pressure chamber 705. The low pressure c〇2 gas is introduced into the low pressure chamber 705 by applying a force on the piston 31〇. This force pushes the base 392 and causes the head 391 to move in the direction of the arrow β. Since the low-pressure water on the head 391 is isolated, it cannot be = the male, the sealed chamber 41〇. The low pressure water becomes pressurized and pushes the head gw to make it flat

The 306 is moved upward so that the sealing member 52 is against the surface 3〇1 to maintain the processing space 510 〇 I Next, in a device processing step, c〇2 is placed into the processing space 510 to increase the processing waste. 〇}2 from 0) 2 supply container (4) by dispensing f 9_上气气^3 and entering the processing space 51〇β set point signal source 379 is set to processing pressure = point 丄 this point is equivalent to the required processing pressure . The pressure transducer is called the debt measurement processing pressure transducer 370. It is detected that the pressure of the processing pressure and the pressure set point is generated and transmitted to the air operation (4) 3 # a signal to stop the c〇2 inflow to process the empty riding day n * set the processing pressure to be expected The processing pressure and the processing power generated by the half-shot force can be balanced by the sealing force as the job.制 370 _ processing pressure and transmission phase _ processing signal to electricity ^ two force converter 375 detected in the low voltage processing $ 705 generated enhancement ^ controller 3, if the processing signal and seal 1 Mao Qi Lili with the child, seal pressure Then, the electronic controller 350 transmits a signal s = 2, and the adjuster 352 arranges (7) 2 from the (3) 2 supply container 360 to one, increasing the strength of the enhanced pressure and the sealing pressure. 1284919 = When the controller 35G can change the processing pressure set point, the sealing force is still balanced with the example of S. If a low pressure is required, the processing pressure can be reduced by two. Air operated valve 342 can be opened to reduce the process pressure set point. The pressure change tif 370 debt test falls on the processing pressure and transmits a processing signal to the electronic controller. The electronic controller 350 then actuates the pressure regulator 352 to vent the processing chamber 7〇5 through the venting opening 362 to reduce the enhanced pressure. The exhaust will continue to hit until the sealing force is the same as the processing force. When the processing in processing space 510 is complete, processing component 3〇0 is in an open position. This action is accomplished by drawing water from the seal-enhancing chamber 41, and the drawn water flows through the pipes 916 and 917, and the air-operated valve 324 flows out of the drain 321 . It is to be noted that the air operated valves 323, 324 and 325 must be coordinated such that (&) low ridge water is moved from the water conduit 320 to the seal enhancement chamber 41 〇 to place the process assembly 3 in the open position, (b The low pressure water exits the seal chamber 41 through the drain 321 to place the process assembly 300 in the closed position. The process 'C〇2' may be circulated in the process space 510 to clean the surface of the semiconductor crystal 0 400. The air operated valve 343 can be opened later, so the C〇2 used in the process empty = 510 can be returned to the container 36 and then used in the next step. It should be noted that C〇2 may be cycled separately in the processing space 51〇 or in one or more processing cycles with other processing materials. The eight pressure-proportional safety valve 341 has a similar function to the balance cylinder 17A of Figs. The pressure-proportional safety valve 341 includes a piston 333. The piston 333 is further used to balance the process pressure and the intensifier such that the enhanced pressure is increased by a multiple of the pressure intensifier, which pressure produces a more or less equal force, to maintain the processing space 510. If the pressure in the low pressure chamber 705 is lower than this value (low pressure point), the processing space 510 is exhausted through the pipes 900A, 900B, and 9〇〇c. The pressure of the second safety valve 341 _ component balances the processing force and the sealing force to maintain the processing space 510. The safety mechanism of the process assembly 300 will now be discussed. The service relief valve 331 will cause the boost pressure to not exceed the critical pressure. If the boost pressure exceeds the critical pressure, the pressure release 19 1284919 valve 331 will open the gas of the low pressure chamber 705 through the pipe 90, 901B, 901C, 901D, and 902 exhaust the venting holes 370. The seal-leak detector 340 monitors the piston seal 809 and the neck 315. If a leak or the like occurs, the seal-leak detection state 340 can Precautions are taken, such as generating a flashing light to alert the user, stopping the assembly 300 to interrupt processing, or other actions, etc. Figure 9 shows a cross-sectional view and illustration of a processing assembly 4 in accordance with another embodiment of the present invention. The processing component 400 differs from the processing component 3 shown in Figure 8 in that the processing component 400 uses an electronic pressure controller 800 to control the pressure regulators 801 and 802. Compared to Figure 8, a similar number The components have similar functions. The processing assembly 400 includes a pressure transducer 380, an electronic pressure controller 8〇〇, a pressure modulation

The whole device 801 and 802 and the set point signal source 810. The pressure transducer 38 is coupled to the process air = 510, the electronic pressure controller 800, and the pressure regulator 8 to control the electronic pressure control state 800 to the set point signal source 81 and the pressure regulators 8〇1 and 8〇2. The electronic pressure controller 800 controls the process pressure and the enhanced pressure. The electronic house controller 800 controls the pressure maps 801 and 802 using the set points determined by the setpoint signal source 81A. The pressure transducer 801 controls the processing pressure, while the pressure changes the crying & If the pressure in the process space 510 exceeds the process set point, the process component 400 will vent the process space 510 and the low pressure process chamber 7A5. Electronic pressure

The force controller 800 provides continuous and precise control of the pressure rather than the configuration shown in FIG. 10 shows a cross-sectional view and a schematic view of a processing assembly 5 according to another embodiment of the present invention. The processing assembly 500 differs from the processing assembly 3 shown in Figure 8 in that the processing assembly 500 utilizes an electronic pressure controller 9 to construct a compressor 902 for controlling the enhanced pressure. A similar number of elements have similar Wei compared to Figure 8. The processing assembly 5 (10) includes a pressure crying 385, an electronic pressure controller 9A, pressure regulators 9〇1 and 9〇2, and a source 909. The pressure transducer 385 is connected to the processing space 51(), the pressure adjustment crying ";. The electronic pressure controller is connected to the setting "load source 909 and pressure regulator 9〇2. Pressure regulator 9〇1 is connected to c〇2 supply capacity 20 1284919 fine, processing, 51 间, discharge hole 362, pressure A proportional safety valve 34 is provided with a low pressure chamber 705 and an air operated valve 33. The pressure regulator 9〇2 is connected to the c〇2 supply container 360, the air valve 330, and the pressure release valve 331. Electronic Pressure Controller 9 〇〇Using an external set point from the setpoint signal source 9〇9, the sub-pressure controller 9 transmits a signal to the pressure regulator 902 for controlling the boosted pressure. When the boost pressure is raised to generate and process the pressure When the generated force balances one of the forces, a pressure signal from the pressure intensifier 9〇8 is transmitted to the pressure regulator 901, causing the process pressure to follow the seal pressure. The process pressure is connected to the electronic pressure. The pressure converter 385 of the controller 9 is monitored. In another variation (not shown), the pressure regulator with the electronic pressure controller adjusts the processing pressure and adjusts the pressure regulator that controls the sealing pressure. Wherein the electronic pressure is controlled to react to an external set point. This adjustment causes the seal pressure to vary with the process pressure. Figure 11 shows a side cross-sectional view and schematic view of a processing system 6 in accordance with another embodiment of the present invention. The processing system 6A includes a processing chamber 920 having a top plate 921 and a bottom plate 922; a lead position sensor 925; a platform 982 having a plurality of leads; a foot position sensor 926; and a foot post 981 connected to the piston 965; Dynamic pressure switch 932 'pressure switch 933; seal intensifier 950; pressure booster 975; pressure regulator unit 944 having inputs 9440, 9441, 9444 and output ends 9442, 9443; air operated valve 952; pressure transducer 930, 931 and 934; pressure relief valves 945, φ 947 and 968; filter 961; solenoid control valve 960; solenoid control valve 951 having output 9510 and _ input 9511, 9512; directional flow controller 966 ; venting opening 971; liquid conduit 967; compressed gas supply 972 and 999 Γ and external set point 946. Top plate 921 and bottom plate 922 define a processing space 983 containing a platform 982. Top plate 921 has a processing space 983 A portion of the inner surface 989. The platform 982 supports a workpiece such as a semiconductor wafer, and the workpiece is undergoing processing in the processing space 983. The piston 965 includes a head 962 having a face 9502. The head 962 is included In the inner chamber 9501, as described below. 21 1284919 The directional flow controller 966 includes a confirmation valve 963 and a needle valve 964. The pressure enhancer 975 includes a low pressure chamber 942, a high pressure chamber 941, and a low pressure chamber 942 connected to the crucible. The piston 943 of the pressure chamber 941. The pressure booster 975 has an input end 9750 connected to the low pressure chamber 942 and an output end 9751 connected to the high pressure chamber 941. Similar to the pressure booster 908 of Fig. 8, the low pressure generated at the input 9750 is converted to the high voltage generated at the wheel end 9751. In an embodiment, the pressure regulator unit gw comprises tsi

Solutions, 2220 Centre Park Court, Stone Mountain, MAC PPC93A sold by Georgia 30087. In one embodiment, the filter is a three micrometer filter. The output 9751 of the pressure intensifier 975 is coupled to the directional flow controller 966 and to the input of the confirmation valve 963 and the input of the needle valve %4. At the output of the directional flow controller 966, the output of the confirmation valve 963 and the output of the needle valve 964 are connected to the pressure relief valve 945. Pressure relief valve 945 is coupled to filter 961 and solenoid control valve 960. One of the outputs of the solenoid control valve 960 is connected to the filter, 961. Filter 961 is coupled to liquid conduit 967 to provide a low pressure liquid oil. An output of the solenoid control valve 960 is coupled to the differential pressure switch 932 and the seal 950. The inner chamber 9501 (seal-enhanced chamber) of the seal strengthener 950 is connected to the output end 9510 of the solenoid control valve 951 by piping. The pressure relief valve 968 is also connected to the piping. The first output end 9511 of the solenoid control valve 951 is connected to the output of the air operation, 952. The input of air operated valve 952 is coupled to compressed gas supply 972. The second output end 9512 of the solenoid control valve 951 is connected to the discharge hole 971. The processing space 983 is connected to the pressure transducer 931 and the differential pressure opening 932 as shown in FIG. The first input 944 of the pressure regulator unit 944 is coupled to a pressure vessel 931, and the second input end 9441 of the pressure regulator unit 944 is coupled to the outside, a fixed point 946. The third input end of the pressure regulator unit 944 is coupled to the compression body supply 999. The first output end 9442 of the pressure regulator unit 944 is coupled to the gentleman release 947 and to the air through a discharge orifice (not shown). The second output end 9443 of the pressure regulator single stomach 944 is coupled to the input 9750 of the pressure enhancer 975. The pressure relief valve 947 is connected to the input end of the pressure intensifier 975 by means of a pipe 22 1284919 9750, and the pressure relief state 934 is also connected to the conduit. The pressure transducer can also be used to monitor the pressure between the pressure relief valve 947 and the input 975A of the pressure intensifier 975. In the f action, the workpiece is placed on the lead extending from the platform 982. The workpiece can be placed on the platform g82 by retracting the leads of the platform 982 and removed from the platform 982 by extending the leads. The relationship between the surface of the platform and the leads is monitored by the lead position sensor 925. The use of the lead is disclosed in U.S. Patent Application Serial No. 10/289, 830, the entire disclosure of which is issued to

Compatible Vacuum Chuck for Semiconductor Wafer Including Lifting Mechanism is disclosed in the High Voltage Direct * Collet of Semiconductor Wafers with Lifting Mechanisms. Secondly, low pressure oil passes from the liquid conduit 967 through the input of the solenoid control valve 96A and into the seal enhancement chamber 9501 to close the process chamber 92, as disclosed in Fig. 8. Next, a treatment material For example, supercritical c〇2 is placed into the processing space 983 to process the workpiece. The pressure in the processing space 983 is converted into an electronic signal by the pressure transducer. The electric hand signal is transmitted to the pressure regulator unit 944, which generates For example, the mechanical output signal corresponding to the pressure. In the normal action, the mechanical output signal is transmitted to the input end 9750 of the pressure intensifier 975. The pressure is enhanced by the crying force ^ the output _ is generated - the high voltage. The high voltage output is transmitted through the directional flow control ^ At %6, the reinforced chamber 9501 is sealed to seal the chamber 92, as disclosed in Figure 8. The pressure relief valve 945 can selectively directional the flow controller unit 966 during abnormal operation. The output is connected to the filter 961 and the liquid conduit 96f. Alternatively, during abnormal processing, the solenoid control valve 96 can selectively connect the output of the square k controller to the liquid 966. Conduit 967. Pressure relief valve 947 is responsible for the safety mechanism of the low pressure side of pressure intensifier 975. When the pressure on input end 9750 reaches a predetermined value, the pressure relief valve vents input 9750 of pressure intensifier 975. The pressure relief valve 945 1 enhances the similar function on the high pressure side of the 975 ,. When the pressure on the input 9751 reaches a predetermined value, the pressure relief valve 945 vents the outlet 9751 of the pressure booster 975. When the workpiece is processed in the processing space 983, the process pressure is converted to an electronic signal by the pressure transducer 931 and transmitted to the pressure regulator unit 944. The pressure regulator unit 944 then generates a low pressure that is transmitted to the pressure boost. The input end 9750 of the pump 975. This low pressure is converted to the high pressure generated at the output end 9751 when it is delivered to the input end 9750 of the pressure intensifier 975, forming a sealing force that is substantially the same as the processing pressure. The pressure regulator unit 944 compares the external set point 946 with the electronic signal (feedback) from the pressure transducer 931. If externally set 946 is less than the feedback signal and the pressure regulator unit 944 vents the pressure booster 975 to the atmosphere through the pressure relief valve 947. If the external set point is greater than the feedback minus, then the pressure regulator unit 944 compresses the gas from the compressed gas 999. Circulating to the input end of the pressure regulator unit _, by outputting the wheel end 9750 of the 1 975. In the weaving, the seal must be noted that the pressure 槪 945, 947 and _ make the pressure between the parts: and the pressure transducer 930 and 934 can be used to display and monitor the pressure of the piping used in the processing system 600. Other configurations of the crimping 5 embodiment can utilize the processing pressure and sealing force to the right δ Γ ' ϋ Λ τ formula, which is the treatment pressure and sealing pressure Most: Bu Ke, by limiting the sealing force to a constant, then (3) the flat (four) force and the gentleman applied to the second side, if the net force of ριϋϊΐ is a very large number, and will change . Therefore, the pressure ΔF=P1*A1 - P2*A2 24 1284919 ΔF on the first surface having the cross-sectional area α1 corresponds to the additional action of one side of the flat plate compared to the other side: fF is Q. It should be noted that when the plane is used to form a = = 间 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , When AF is greater than 〇, the processing space requires more force than is necessary to maintain additional unwanted energy. Referring to formula (1), when A1 and A2 are equal, it is equal to A1*(P1 - P2), that is, when the difference ap between P1 and P2 remains unchanged, AF remains unchanged. When ΔP changes, AF changes linearly with AP. When A1 and A2 are not equal, the correlation between ΔF and hues may be different, and the present invention facilitates the use of this correlation. More specifically, AF is not necessarily proportional to P1-P2. So, for example,

When Al=100 in2, A2=200 in2, Pl=3000 lb-f/in2, P2=1600 lb-f/in2' then PI-P2 or △P=3000 lb-f/in2-1600 lb-f/ In2=1400 psid (psid beside the stone/inch square). Net force Δf=p2*A2-P1*A1=1600 lb-f/in2*200 in2-3000 lb-f/in2*100 in2=20000 lbf-d (“lbf-d” represents the force difference). However, if P1=2500 lb-f/in2 and P2=ll〇〇lb-f/in2, then ΛΡ does not change (still equal to 14〇〇psid), but eight F=“2*A2-P1*AW1G0 lb- f/in2*20G in2-2500 lb-f/in2*l〇〇in2=-30000 lbf-d. Therefore, although ap remains unchanged, Δ F still changes size and direction when pressure changes. Generally speaking, the processing system shown in Figure 1]t〇〇

A processing system such as AF changes 〇pvQl) with pressure in the processing space, such as processing system 983. As described below, embodiments of the present invention utilize this correlation to efficiently maintain processing space. Using the aforementioned example, AF increases as P1 increases. Referring to Figure u, P1 corresponds to processing space 983 (PVQl) and P2 corresponds to pseal. Therefore, when Pm increases and the AP remains unchanged, there is no necessary increase. AF (and P-) can be reduced to save energy while maintaining processing space. This non-linear relationship can be exploited (ρ_ does not have to change with Pw) to reduce the energy of the input processing system to maintain processing space. Energy can be input to the processing system at, for example, input end 9444 of pressure regulator unit 944 of FIG. 25 1284919 A processing system is described by the above description and the following figures, in which the pressure difference ΔΡ does not substantially change. This limitation is mainly used to simplify the description. It can also be used to simplify the algorithm for controlling the pressure regulator unit 944. It should be noted that Λρ may vary according to embodiments of the invention. Figure 12 is a diagram for describing the principles of an embodiment of the present invention. Figure 12 is a graph of pressure/force versus time for processing system 600 of the drawing, corresponding to one or more processing cycles of increasing time seven to h. Figure 12 has two vertical axes, a left vertical axis and a right vertical axis. The left vertical axis is labeled "Pressure" in psig or psid, and is used to represent the values indicated by lines 210, 215, and 220, as detailed below. Right vertical = shown as "F-view" ''units are lbf or lbf_d, used to measure the line outline, L I5 * table - the value shown, will also be detailed below. It should be noted that although the map field I f The time is shown on the horizontal axis 'but diagram 1200 is used to describe the relationship between the pressure difference and the force'. Therefore, the figure can also be referred to as the relationship between force and pressure. μ Figure 11 'Processing system 600 includes a processing space 983. The processing space 983 Ϊ ΐ ΐ ΐ 维持 维持 维持 : : : : ( ( 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加The container, such as C〇2 supply capacity 215 system 'and time you close' f /, Zhong Hao. 1 is based on PS1 §; line system and time relationship, which unit; and line 22 〇 diagram 1200 also Use 3 chrome green enamel -| ” Pseal-PvQl phase, also in Psid. The force of the face 989 is related to the force; the line 225 is applied to the force lbf to the time _; the line 23G is applied to the face 9502 26 1284919 iF two fine 1 Μ _ _ (6) thin, ί-:; 220 -- Dealing with open space, n: "Supply "^ is sufficient to maintain «a ^ - Π / Ι, is not the pressure of MAC", including the pressure of the sound (the data of the early pressure of the project) 'this pressure It is converted into a sealing pressure 983 ! ^ p—p p". 匕3 7 The difference between the corresponding data items of the 2 and 3 blocks (△ 乍 = 4^目 5 = indicated as "processing power", including applied to _ On the ff sage item. Block 7, marked as "Yes", contains the difference between the corresponding data items of the blocks 5 and 6. 3 (four) A picture 1300, shown in a part of the point of the first table, the role The force difference is dry and early ί and the corresponding relationship with Ρν°1 (unit is Psig). Figure 1300 = AF is constant, AF directly changes. It should be noted that when n is not changed for mosquito ride, this kind _ regret - like. For $ brother real ^ =, the processing pressure is between 28 and 1218 psig, the upper shell, varying between 196 psid and 226 psid. Lu Li has two results, if the transfer - processing Between (that is, to maintain a right-minimum force, you must choose δρ, so that the minimum force, the force of force to turn the processing space. In this case, if the pressure increases, Τ ^ F exceeds this The minimum level (△?_&) becomes an inefficient process. This element 944 can be touched most, so that the magnetic measurement makes it impossible to use the minimum energy to maintain the processing space. The second result is that Pseal increases the specific processing power (Pv. 0 is slow, B | JP - comparable Pv. 1 is sluggish and still maintains processing space. Therefore, the rib produces a sealing force pressure regulator single 27 1284919 The reaction time of element 944 does not need to be as fast as the change in processing pressure.

Referring to Figure 11, the pressure regulator unit 944 can be controlled to conform to the foregoing examples. According to the present invention, the pressure regulator unit 944 can be operated by a controller that controls the pressure regulator unit 944 to be efficient. The change also controls the pressure regulator unit 944 so that the AF does not exceed = esh. For example, it can be maintained in response to a force allowing a small amount of pressure to be placed. The treatment room can also be maintained. The adjuster unit 944 has a fast switching between the dusts to maintain the processing space 983. In step 28 of the embodiment of the invention, in step 12 of the first step of the invention, any initialization step can be utilized. Reference (4) In the first step J01, a wafer is placed on the platform 982 and forms a processing space 983. The maximum processing pressure in the processing space 983 is counted as a force. Next, in step 1402, '_ Whether a minimum force difference (Δ?_) is needed to maintain the processing space 983. If a minimum value is required, step 1410 is performed; otherwise, step 1405 is performed. In step 1410, the minimum force difference is calculated. 〇5 is set to 〇 Lb-f. It should be noted that in step 14〇5, (4)

, set to other values that are more in line with the situation. Step 1415 is performed regardless of either step 141 or step 14〇5. In step 1415, a wafer is processed in processing space 983. Next, in step 1420, pVQl* is read and varied to maintain processing space 983. According to the embodiment of the present invention, 卩_ is varied in accordance with the aforementioned formula (1) to efficiently maintain the processing space 983. That is, sPseal can be set to delay Pv()i& to maintain processing space 983 by letting AF be greater than AFthresh. It should be noted that for simplicity, in Figure 14, step 1420 is after step 1415, but when the wafer is processed, step 1420 can be performed in step 1415.

Then, in step 1430, it is detected whether the processing of the wafer is completed. If the process is not completed, step 1420 is re-executed. If the process is complete, then step 1435 is performed. In step 1435, processing space 983 becomes unprocessed and processing space g83 is corrupted. The wafer is removed from platform 982. Next, in step 1440, the processing steps are completed. As previously mentioned, in accordance with an embodiment of the present invention, the pseal can be controlled by the MAC valve 940, which can be programmed to perform step 1420. As previously mentioned, the pressure regulator unit 944 can be programmed or controlled to generate a pressure that is converted to a sealing force as previously described in equation (1). While the invention has been described with respect to the preferred embodiments, the modifications and the 29 1284919 Therefore, any cross-sectional view of the processing system in the open position of the present invention should be included in the present invention without departing from the spirit and scope and equivalents of the present invention. According to the top view, the cross-sectional view and the bottom view of the Pingwu station according to the present invention, FIG. 3 shows the work place shown in FIG. 1 in the closed position, and the situation is shown in the position of _ position_丨 (4). The combination of the combined treatment system and the i-opening position processing system, the components thereof, the cylinder, the balance cylinder shown in Fig. 6 in the processing; the cross section of the combination between the combinations Figure and schematic diagram, cross-sectional view and schematic diagram of the combination, this combination is shown in the cross-section and schematic diagram of the combination of the system of the system and the group of the real group, the combination of the group of humanities f and the combination Cross-sectional view and schematic view, this combination is in accordance with still another embodiment of the present invention, and is implemented as a relationship between force and force versus time, which shows one embodiment of the present invention == And a relationship diagram with the processing of Lili, which shows one of the inventions Describing the flow chart of the steps of the embodiment. 30 1284919 100 processing assembly 101 processing chamber 110 upper element 115 sealing strengthening chamber 116 processing chamber 120 processing plate 125 piston gasket 130 sealing surface 131 sealing element 132 arrow 134 radius 135 outer surface 136 inner surface 140 space 150 lower element 155 Platform 156 upper surface 170 balance cylinder 171 upper storage chamber 172 piston 173 lower storage chamber 175 discharge hole 177 incompressible liquid 178 cleaning liquid 180, 181 and 190 conduit 185 left arm 185A left upper arm 185B left lower arm 186 right arm 1284919 186A right upper arm 186B right lower arm 188 201 clamp 203 weight 205 top extension 207 bottom extension 209 base 250 support assembly 300 processing assembly 301 inner surface 302 upper element 303 neck 304 lower element 305 seat 306 platform 310 piston 315 neck Part 320 Water conduit 321 Drain 埠 322 Water filter 323, 324, 325, 330, 342 and 343 Air operated valve 325 Air operated valve 331 Pressure release valve 333 Piston 340 Seal - Leak detector 341 Pressure - Proportional safety valve 350 Electronics Controller 352 Pressure Regulator 32 1284919 360 C〇2 Supply Containers 362 and 371 Discharge Holes 370 and 375 Pressure Transducer 37 Θ Set Point Signal Source 380 Sub-pressure controller 385 pressure transducer 391 head 392 pedestal 400 processing assembly 406 upper space 410 sealing reinforced chamber 500 processing assembly 510 processing space 520 sealing element 600 processing system 700 processing chamber 705 low pressure processing chamber 800 electronic pressure controller 801 And 802 pressure regulator 809 piston seal 810 set point signal source 900 electronic pressure controller 901, 902 pressure regulator 900A, 900B, 900C, 901A, 901B, 901C, 901D, 916, 917 with 908 pressure enhancer 909 set point Signal source 915 and 918 piping 920 processing chamber 33 1284919 921 top plate 922 bottom plate 925 lead position sensor 926 foot position sensor 930, 931 and 934 pressure transducer 932 differential pressure switch 933 pressure switch 941 high pressure chamber 942 low pressure chamber 943 piston 944 pressure regulator unit 9440 first input end 9941 second input end 9442 and 9443 output end 9444 third input end 945, 947 and 968 pressure relief valve 946 external set point 950 seal intensifier 9501 inner chamber 9502 surface 9510 Output 9511, 9512 Input 951 Solenoid Control Valve 952 Air Operated Valve 960 Solenoid Control Valve 961 Filter 962 Head 963 Confirmation Valve 9 64 needle valve 34 1284919 965 piston 966 directional flow controller 967 liquid conduit 968 pressure relief valve 971 discharge hole 972 compressed gas supply 975 pressure booster 9750 input 9751 output 980 base 981 foot 982 platform 983 processing space 989 Inner surface 999 compressed gas supply 1200 Figure 1300

Claims (1)

1284919 X. Patent application scope: 1. A device for processing a semiconductor wafer, comprising: a. an upper component; b. a lower component, wherein the upper component and the lower component are combined with each other to form a processing space; · a seal-enhanced state for holding the upper member against the lower member to maintain the processing space, and the seal intensifier for controlling the pressure in a seal-enhancing chamber, the pressure in the seal-enhancing chamber being generated A processing pressure in the processing space and a nonlinear change. 2. If applying for the equipment for processing the wafer, the seal intensifier is used to make the super/amp; one of the upper and lower components a non-negative net. The force is minimized, and the net force is according to the formula ρι*Α1—ρ2*Α2, wherein P1 is equal to the sealing pressure, P2 is equal to the processing pressure, A1 is equal to the cross-sectional area of the sealing chamber, and A2 is equal to the treatment. The cross-sectional area of the space. ^ If applied, the apparatus for processing semiconductor wafers of item 2 of the benefit range, wherein the seal enhancer is used to maintain the difference between -P and P2 substantially unchanged during the processing cycle. The device of the first item of the scope for processing the semiconductor_, the ΐίίΐϊΐ15 includes a first chamber and the seal strengthening chamber, the first chamber ΐΐ ΐ ΐ ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' = The first - diligent in the Mi Lai chamber to produce the second - pressure two pressure. The device for processing a semiconductor wafer according to item 2 of the second division, wherein the 杈σι] face area A1 is larger than the cross-sectional area A2. The first item of the scope is used to process a semiconductor crystal device, and a device for generating a supercritical state. Spoons are included in the equipment for processing semiconductor wafers in item 6, and include the connection domain processing such as the ω2 supply container. 8. The apparatus for processing a semiconductor wafer according to claim 1 of the invention, wherein the upper element and the lower element of the 36 1284919 form a supercritical processing chamber. The apparatus for processing a semiconductor wafer according to the first item of the Chinese Patent Laid-Open Patent Publication No. 1, the crying of which comprises a hydraulic piston connected to the lower chamber, the seal strengthener for maintaining the processing space. 10. A device for processing a semiconductor wafer, comprising: a·- an upper component; 'the upper component and the lower component are mutually reduced to form a _=device' for holding the upper component and the lower element The seal is made to maintain the seal pressure in the device to control the seal-enhancement chamber, and the seal pressure in the chamber varies non-linearly with the pressure generated. The method of maintaining the processing space includes the following steps: a. generating a processing pressure in a processing space; and controlling the sealing pressure to form and maintain a processing space, wherein in the - Luli path The sealing pressure changes non-linearly with the processing pressure. Processing—12. For the maintenance method of the processing space in the nth patent range, = sealing pressure and the area according to the formula (4) mA2 seeking word ', and A2 is equal to the transverse pressure change of a processing space to maintain Λίτ higher than one Threshold value. Said that 7忒袷封13. If the processing space of the patent application scope 12 is maintained, such as the maintenance method of the processing space of 11 patents of the company, 1 step of the physical pressure is included in the processing space. Contents of a high pressure ^ 15. If you apply for a special Wei Wei f 14 items of treatment _ Weishang pressure treatment liquid contains supercritical carbon dioxide. 16. The method of claim 12, wherein the step of applying the sealing pressure comprises generating a hydraulic pressure in the seal strengthening chamber. XI. Schema: 38