1282295 九、發明說明： 【發明所屬之技術領域】 胃本發明係有關於一種進行例如玻璃基板、半導體基板、 壓電材料基板等基板之切斷時所使用之基板加工裝置及基 板加工方法。 【先前技術】 液晶顯示裝置或有機EL(電致發光）顯示裝置等，係藉由 於以玻璃作為代表之基板上形成TFT(Thin Film Transistor ·薄膜電晶體）而製成。於該生產為了提升效 率，於大的玻璃上形成多數分面板之顯示裝置，並於後進 仃切割取出面板。例如由第4世代（73〇χ92〇 mm2)之玻璃基 板，可製成4片19英吋面板，6片17英吋面板。玻璃基板之 尺寸越大’可由一片玻璃基板取出越多面板，不僅可提升 生產性’另一方面切斷製程之良率問題變重要。 切斷玻璃之製程有2步驟，第丨步驟係於玻璃上形成刻劃 格線狀之痕跡，該步驟稱為刻劃，又，該刻劃格線稱為刻 劃線。第2步驟係沿刻劃線切割玻璃的方式對玻璃施力而 切斷之步驟，該步驟稱為切割。本發明係關於刻劃。 大部分之刻劃都是採用直接於玻璃基板按壓鑽石刀之方 法。由於在該方法施加過度之力於玻璃基板，容易產生無 法預期之裂痕或缺口，並且於按壓刀時之壓力或基板之運 送速度之調整必須要有經驗性之斟酌。又，由於鑽石刀隨 著使用時間增長而刀刃會鈍，因此，必須定期替換。由於 前述調整狀況會隨著每一刀不同，因此，於替換刀後必須 102394.doc 1282295 進行對應该刀片之調整，會導致降低生產性。 鑑於珂述事項’開發有藉由雷射光進行非接觸之刻劃技 術。該光源大部分都是丨_以上之波長。由於玻璃相當易 吸收該波長域之光，因此會產生熱造成之應力。之後當馬 上噴上水等之冷煤進行急速冷卻時會於玻璃厚度方向上產 生裂縫（裂痕）。由於該方法係利用熱應力，因此位置之护 制並不容易。再者’必須要有用以產生裂痕之起點之缺口工1282295. EMBODIMENT OF THE INVENTION The present invention relates to a substrate processing apparatus and a substrate processing method which are used for cutting a substrate such as a glass substrate, a semiconductor substrate, or a piezoelectric material substrate. [Prior Art] A liquid crystal display device or an organic EL (electroluminescence) display device or the like is formed by forming a TFT (Thin Film Transistor) on a substrate typified by glass. In order to improve the efficiency, a large number of panel display devices are formed on a large glass, and the panel is cut out at a later stage. For example, from the 4th generation (73〇χ92〇 mm2) glass substrate, 4 19-inch panels and 6 17-inch panels can be made. The larger the size of the glass substrate, the more the panel can be taken out from a single glass substrate, which not only improves productivity, but also makes it difficult to cut the yield of the process. There are two steps in the process of cutting the glass. The third step is to form a scribe line trace on the glass. This step is called scribe, and the scribe line is called a scribe line. The second step is a step of severing the glass by cutting the glass along the scribe line, and this step is called cutting. The present invention relates to scoring. Most of the characterizations are based on the method of pressing a diamond knife directly onto a glass substrate. Since excessive force is applied to the glass substrate in this method, undesired cracks or nicks are liable to occur, and the pressure at the time of pressing the blade or the adjustment of the transport speed of the substrate must be empirically considered. Also, since the diamond knife is blunt as the use time increases, it must be replaced periodically. Since the above adjustment conditions will vary with each knife, it is necessary to adjust the blade after 102591.doc 1282295 after replacing the knife, which will result in reduced productivity. In view of the above-mentioned matters, the development of non-contact scribing technology by laser light has been developed. Most of the light sources are wavelengths above 丨_. Since glass is relatively easy to absorb light in this wavelength range, it causes stress caused by heat. Then, when the cold coal such as water is sprayed on the horse for rapid cooling, cracks (cracks) are generated in the thickness direction of the glass. Since the method utilizes thermal stress, the protection of the position is not easy. Furthermore, it must be useful to create a gap in the starting point of the crack.
或急速冷卻之冷煤並非完全非接觸性步驟，因此，會有 產生玻璃基板之污染之問題點。 另一方面，亦提出有利用多光子吸收之刻劃技術（參照 專利文獻1)。依照專利文獻】，以m秒以下之長度之脈衝 振盪雷射光，並聚光使照射光密度為lxi〇8(w^m2)以上 時，產生多光子吸收之玻璃離子化之改質，而可以此作為 起點來進行割斷。由於在此狀況下係完全非接觸，因此； 避免前述問題。又，多光子吸收對於玻璃而言，使用透明 之紫外區域之雷射光亦會產生，此時，僅有產生玻璃離子 化之部分會吸收紫外區域之波長，接著，#由雷射照射， 玻璃會昇華而形成溝。前述現象於玻璃以外之非金 亦會發生。 土反 [專利文獻1]日本特許第3408805號 (發明所欲解決之問題） 對割斷越有 ’但是實際 而提升破螭 藉由夕光子吸收離子化之範圍之深度越深， 利且玻璃基板之厚度部份離子化之程度越理想 上，極限為100 μηι左右。當為了加快刻劃速度 102394.doc 1282295 基^之運送速度時，該深度會急m n 力:度而提升雷射功率密度時，會使玻璃 ;㈣ 產生未預期之破裂，开心速加熱而 可知刻劃速度增快之效果不佳，日， 欲以高速描繪深刻劃線是困難的。 且 又，依照刻劃之方向，而產生了所謂刻 π # 化之現象，而使得切& 溝深度k 卞件之允許範圍狹窄。即，於列割 線具有溝深度參差不齊，六 ' 缺口等。 及合易產生偏離刻劃線之裂縫或 本發明係鑑於前H重I*主t Fm 、W迷事情而開發完成者，其目的在於提供 種可形成用以穩定切斷基板之刻_後# # I 、 基板加工方法。^板之⑽之基板加工裝置及 【發明内容】 為了達成前述目的， 勺本叙明之基板加工裝置包含平△及 雷射7b照射機構··前述平台係用以保持基板者，·而 射光照射機構係用以使聚光點聚集於前記基板並照射雷射 先’以使^保持於前述平台之前述基板產生多光子吸收 者。且’珂述雷射光照射機構包含光學元件，該光學元件 係按照前述雷射光相對於前述基板之移動方向，控制昭射 於前述基板之雷射光之偏光方向者。 制'，、、射 於刖述本發明之基板加工裝置，利用雷射光照射機構將 聚光點聚集於基板之雷射光照射於基板上。藉此，於基板 產生多光子吸收，而使產生多光子吸收之區域之改質產 生。 、 藉由私動基板與雷射光之相對位置，形成由改質區域之 102394.doc 1282295 軌跡所構成之刻劃線。在本發明，按照該移動方向控制雷 射光之偏光方向。即，控制雷射光之偏光方向，使雷射光 之偏光方向相對於移動方向總是一定。藉此，形成由一定 深度之改質區域之執跡構成之刻劃線。 為了達成前述目的，本發明之基板加工方法係使聚光點 聚集於基板上並照射雷射光，而於前述基板使多光子吸收 產生並加工前述基板，按照前述雷射光相對於前述基板之 移動方向，並照射控制偏光方向之前述雷射光。 在前述本發明之基板加工方法，聚光點聚集於基板之雷 射光照射於基板。藉此，在基板產生多光子吸收，使產生 多光子吸收之區域之改質產生。 藉由移動基板與雷射光之相對位置，形成由改質區域之 軌跡構成之刻劃線。在本發明係照射已按照該移動方向控 制偏光方向之雷射光。即，控制雷射光之偏光方向，使雷 射光之偏光方向對於雷射光相對於基板7之移動方向總是 一定。藉此，形成由深度統一之性質改變區域之轨跡構成 之刻劃線。 (發明之效果） 本發明可形成用以穩定切斷基板之刻劃線。 【實施方式】 以下，針對本發明之基板加工裝置及基板加工方法之實 施型態，參照圖示進行說明。 (第1實施型態） 第1圖係顯示本實施型態之基板加工裝置之結構之一例 102394.doc 1282295 之圖。 本實施型態之基板加工裝置1係包含雷射光源2、光成形 光學系3、1/2波長板4、聚光光學系5、驅動機構6、被加 工對象之基板7、載置基板7之XY平台8及控制裝置全體之 控制機構10。雷射光源2、光成形光學系3、1/2波長板4、 及聚光光學系5係相當於本發明之雷射光照射機構。 雷射光源2係例如以脈衝振盪yag之3次高諧波（波長355 nm)之雷射光。脈衝重複頻率係例如3 〇 kHz。由雷射光源2 射出之雷射光係例如直線偏光。此外，雷射光源2係配合 基板7之材質作選擇。在本實施型態，假設基板7係玻璃基 板的情況。由於切斷玻璃基板之Si_〇結合之必須之能源係 必定為355 nm之波長之光之2倍左右，因此，藉由多光子 吸收（此時為2光子吸收）可切斷Si_〇結合。因此，根據基板 之材夤，亦可使用YAG之2次高諧波（波長532 作為雷 射光源2。Cold coal that is rapidly cooled or not is not a completely non-contact step, and therefore, there is a problem of contamination of the glass substrate. On the other hand, a scribing technique using multiphoton absorption has also been proposed (see Patent Document 1). According to the patent document, when the laser light is oscillated by a pulse having a length of m seconds or less and concentrated so that the irradiation optical density is lxi〇8 (w^m2) or more, the multi-photon absorption of the glass ionization is improved, and This is used as a starting point for cutting. Since it is completely non-contact in this situation, the above problems are avoided. Moreover, multiphoton absorption is also used for glass, and laser light using a transparent ultraviolet region is also generated. At this time, only the portion where the glass ionization is generated absorbs the wavelength of the ultraviolet region, and then, the laser is irradiated by the laser. Sublimation forms a ditch. The above phenomenon occurs in non-gold other than glass.土反 [Patent Document 1] Japanese Patent No. 3408805 (problem to be solved by the invention) The more the cut is made, the actual depth is increased, and the deeper the range of absorption ionization by the photon absorption, the deeper the glass substrate The more the degree of partial ionization of the thickness is, the limit is about 100 μηι. When in order to speed up the speed of the marking speed of 102,394.doc 1282295, the depth will be anxious: when the laser power density is increased, the glass will be caused; (4) Unexpected rupture will occur, and the heating will be accelerated. The effect of increasing the speed of the stroke is not good. It is difficult to describe the deep line at high speed. Moreover, according to the direction of the scribe, a so-called π π phenomenon is generated, and the allowable range of the cutting & depth is the narrow. That is, the secant line has a groove depth jagged, a six 'notch, and the like. And the invention is produced by the crack of the scribe line or the invention is developed in view of the fact that the front H heavy I* main t Fm and the fascinating thing, the purpose of which is to provide a kind of seed which can be formed to stably cut the substrate _ after # # I, substrate processing method. ^板(10) Substrate Processing Apparatus and [Description of the Invention] In order to achieve the above object, the substrate processing apparatus described in the present invention includes a flat Δ and a laser 7b illuminating mechanism. The platform is used to hold the substrate, and the light illuminating mechanism is provided. The utility model is characterized in that the concentrating spot is concentrated on the pre-recording substrate and the laser is irradiated first to enable the multi-photon absorber to be held on the substrate of the platform. Further, the laser light irradiation means includes an optical element for controlling a polarization direction of the laser light incident on the substrate in accordance with a moving direction of the laser light with respect to the substrate. The substrate processing apparatus according to the present invention is directed to irradiate a laser beam having a condensed spot on a substrate by a laser light irradiation means to illuminate the substrate. Thereby, multiphoton absorption is generated on the substrate, and the modification of the region where multiphoton absorption occurs is generated. The scribe line formed by the trajectory of the modified area 102394.doc 1282295 is formed by the relative position of the private substrate and the laser light. In the present invention, the direction of polarization of the laser light is controlled in accordance with the moving direction. That is, the polarization direction of the laser light is controlled such that the polarization direction of the laser light is always constant with respect to the moving direction. Thereby, a scribe line formed by the execution of the modified region of a certain depth is formed. In order to achieve the above object, the substrate processing method of the present invention concentrates a condensed spot on a substrate and illuminates the laser light, and causes the multi-photon absorption to generate and process the substrate on the substrate, according to the moving direction of the laser light relative to the substrate. And irradiating the aforementioned laser light that controls the direction of polarization. In the substrate processing method of the present invention, the laser light concentrated on the substrate is irradiated onto the substrate. Thereby, multiphoton absorption occurs in the substrate, and the modification of the region where multiphoton absorption occurs is generated. The scribe line formed by the trajectory of the modified region is formed by moving the relative position of the substrate and the laser light. In the present invention, laser light that has been subjected to the polarization direction in accordance with the moving direction is irradiated. That is, the direction of polarization of the laser light is controlled such that the direction of polarization of the laser light is always constant for the direction of movement of the laser light with respect to the substrate 7. Thereby, a scribe line composed of a trajectory of a region in which the nature of the depth is unified is formed. (Effects of the Invention) The present invention can form a score line for stably cutting a substrate. [Embodiment] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings. (First embodiment) Fig. 1 is a view showing an example of the structure of a substrate processing apparatus of the present embodiment, 102394.doc 1282295. The substrate processing apparatus 1 of the present embodiment includes a laser light source 2, a light shaping optical system 3, a 1⁄2 wavelength plate 4, a collecting optical system 5, a drive mechanism 6, a substrate 7 to be processed, and a substrate 7 to be processed. The XY stage 8 and the control mechanism 10 of the entire control unit. The laser light source 2, the optical shaping optical system 3, the 1⁄2 wavelength plate 4, and the collecting optical system 5 correspond to the laser light irradiation mechanism of the present invention. The laser light source 2 is, for example, laser light that pulsates the third harmonic of the yag (wavelength 355 nm). The pulse repetition frequency is, for example, 3 〇 kHz. The laser light emitted by the laser light source 2 is, for example, linearly polarized. Further, the laser light source 2 is selected in accordance with the material of the substrate 7. In the present embodiment, it is assumed that the substrate 7 is a glass substrate. Since the energy source necessary for the Si_〇 bond to cut the glass substrate must be about twice the wavelength of the wavelength of 355 nm, the Si_〇 bond can be cut by multiphoton absorption (in this case, 2 photon absorption). . Therefore, according to the material 基板 of the substrate, the second harmonic of YAG (wavelength 532 can be used as the laser light source 2).
光成形光學系3係例如使由雷射光源2射出之雷射光平行 ，二,，光成形光學系3係包含控制雷射光之功率之光學 艾咸器藉此’由光成形光學系3係射出例如雷射功率7 W v汲長板4係相當於本發明之光 光學系3射出之雷射光之偏光方：件“由光成 為先方向，以相對於1/2波長;| ΠΓ之角度射入時’光之偏光方向只旋轉_ 光方/由控制1/2波純4之切軸可得.料備任意之 光方向之雷射光。 102394.doc !282295 聚光光學系5係使由1/2波長板4射出之雷射光聚集於基 板7。聚光光學系5係達到在基板7内部使之產生多光子吸 收之必要之程度’例如聚光使雷射光之能量為lkJ/cm2。 所謂多光子吸收係指同時吸收2個或2個以上之光子，並 供給合計激發所必須之能量。為了提升多光子吸收之準確 率，要調整雷射光之功率或於聚光點之能量。藉由多光子 吸收，例如於基板7形成改質區域。基板7為玻璃基板時， 改質區域係例如離子化區域。於該離子化區域再照射雷射 光犄，在e亥區域之玻璃昇華而形成溝。此外，即使未形成 溝，於後之切割時亦可藉由於該離子化區域施力，將離子 化區域作為起點來切斷基板7。 驅動機構6係用以保持1/2波長板4之旋轉平台，係依照 來自控制機構10之控制訊號使1/2波長板4旋轉。藉此，調 整1/2波長板4對雷射光之偏光方向之光學軸之角度。驅動 機構6係藉由控制機構1 〇控制其旋轉角度。 基板7係例如玻璃基板。但是，只要是足以產生加工之 多光子吸收之材料，就不限定材料。除此以外，基板了亦 可採用半導體基板或壓電材料基板。 XY平台8之結構係搭載被加工對象之基板7，並且可朝X 方向及γ方向移動。χγ平台8之動作係藉由控制機構1〇控 制。在本實施型態，藉由固定雷射光，並且利用XYs 8使 之移動基板7，來使雷射光於基板7上移動，但是，亦可構 成固定XY平台8並掃描雷射光。藉由χγ平台8使基板7移動 而形成溝狀之刻劃線。 102394.doc -10- 1282295 控制機構ίο係控制裝置全體之動作。控制機構1〇係按照 XY平台8之X方向及γ方向動作，控制驅動機構6之1/2波長 板4之旋轉角度。例如，控制驅動機構6，使雷射光之偏光 方向總是與使XY平台8動作之雷射光相對於基板7之移動 方向一定。更理想的狀況係控制驅動機構6，使雷射光之 偏光方向總是與雷射光相對於基板7之移動方向平行。 接著，針對前述結構之本實施型態之基板加工裝置i之 動作進行說明。 ^ 由雷射光源2射出之雷射光係藉由光成形光學系3平行 化’且調整雷射光之功率。且，藉由1/2波長板4調整偏光 方向’並藉由聚光光學系5聚光於基板7。藉由使雷射光聚 集於基板7’於基板7之内部產生多光子吸收，並且於藉由 多光子吸收產生之離子化區域之玻璃昇華。 藉由XY平台8，基板7係相對於雷射光而相對移動，因 此’昇華而成為溝之部分成為刻劃線。在本實施型態，控 鲁制1/2波長板4之旋轉’使雷射光之偏光方向對於雷射光相 對於基板7之移動方向總是一定。 於形成刻劃線後，在接下來之切割步驟中，係沿著刻劃 線對基板7施力來切割基板7。藉此，將基板7切斷成由刻 劃線包圍之各個小基板。 ，在前述結構之本實施型態之基板加工裝置1，按照雷射 光相對於基板7之移動方向，控制照射於基板7之雷射光之 偏光方向。針對該理由進行說明。 於使雷射光對基板7移動(稱為刻劃)時，雷射光之偏光 I02394.doc 1282295 方向與刻自方向構成之角度及形成之刻劃線之溝深之關係 進行凋查。第2圖顯示該實驗結果。在本實驗，使用玻璃 基板作為基板7。 如第2圖所示，可知對應雷射光相對於基板？之移動之方 向，使雷射光之偏光方向旋轉時，所形成之刻劃線之溝深 變化。此時，溝深最大係在於偏光方向與刻劃方向平行之 狀悲。目A，可以說離子區域之深度最深係在於偏光方向 與刻劃方向平行之狀態下。又，可知第2圖之溝深之極小a 與極大b之關係係b=i.2a。 由前述實驗結果，只要維持雷射光之偏光方向平行於刻 劃方向之狀態刻劃時，相對於任意之執跡都可使離子化區 域之冰度形成為其雷射照射條件最大限度者。X,即使不 :仃/、要維持雷射光之偏光方向與刻劃方向一定之狀 態，對於任意之軌跡都可使離子化區域之深度一定。 例如，令脈衝重複頻率為30kHz、雷射：率為m 平台8之移動速度為60mm/s時，在控制1/2波長板4之旋轉 角使雷射光之偏光方向垂直於刻劃方向之情形，刻釗線之 =為55叫。相對於此’若於同一條件下，控制"2波 長板4之旋轉角使雷射光之偏光方向平行於刻劃方向時， 刻劃線之溝深約為70 μηι。 向之角度總是與雷射光相對 形成之刻劃線之深度就一 如前述說明，藉由使偏光方 於基板7之移動方向一定，戶斤 定。因此，可穩定刻劃。 在更理想之狀況 當藉由偏光方向之角度平行於雷射光 102394.doc 1282295 相對於基板7之移動方向，使雷射照射條件一定》 :最：之刻劃、線。為此’可以高速形成深刻劃線：藉 形成沬刻劃線，而使接下來之切割更容易。 (第2實施型態） 第3圖係顯示本實施型態之基板加工裝置之結構之一· :圖。此外，對與第丨實施型態相同之構成要素標：同： 才示號’並省略重複說明。The optical forming optical system 3 is, for example, parallel to the laser light emitted from the laser light source 2, and the optical forming optical system 3 includes an optical smear device that controls the power of the laser light, thereby being emitted by the optical forming optical system 3 For example, the laser power 7 W v 汲 long plate 4 corresponds to the polarized light of the laser light emitted by the optical optical system 3 of the present invention: "the light becomes the first direction, with respect to the 1/2 wavelength; | When entering, the direction of polarization of the light is only rotated _ light side / can be obtained by controlling the 1/2 wave pure 4 cutting axis. The laser light of any light direction is prepared. 102394.doc !282295 Concentrated optical system 5 series makes The laser light emitted from the 1/2 wavelength plate 4 is collected on the substrate 7. The concentrating optical system 5 is required to generate multiphoton absorption inside the substrate 7, for example, condensing the energy of the laser light to lkJ/cm2. Multiphoton absorption refers to the simultaneous absorption of two or more photons and supplies the energy necessary for total excitation. In order to improve the accuracy of multiphoton absorption, the power of the laser light or the energy at the concentration point is adjusted. Absorbed by multiphotons, for example, a modified region is formed on the substrate 7. Substrate 7 In the case of a glass substrate, the modified region is, for example, an ionized region, and the laser beam is irradiated to the ionized region, and the glass in the e-hai region is sublimated to form a groove. Further, even if no groove is formed, the subsequent cutting may be performed. Since the ionization region is biased, the ionization region is used as a starting point to cut the substrate 7. The driving mechanism 6 is for holding the rotating platform of the 1/2 wavelength plate 4, and is 1/2 in accordance with the control signal from the control mechanism 10. The wave plate 4 is rotated. Thereby, the angle of the optical axis of the 1/2 wavelength plate 4 to the polarization direction of the laser light is adjusted. The drive mechanism 6 controls the rotation angle thereof by the control mechanism 1. The substrate 7 is, for example, a glass substrate. The material is not limited as long as it is a material capable of generating multi-photon absorption of processing. In addition, a substrate or a piezoelectric substrate may be used as the substrate. The structure of the XY stage 8 is such that the substrate 7 to be processed is mounted, and It can move in the X direction and the γ direction. The operation of the χγ platform 8 is controlled by the control mechanism 1 。 In the present embodiment, by fixing the laser light and moving the substrate 7 by using XYs 8 The laser light is moved on the substrate 7, but it is also possible to form the fixed XY stage 8 and scan the laser light. The substrate 7 is moved by the χγ platform 8 to form a groove-shaped scribe line. 102394.doc -10- 1282295 Control mechanism ίο The control unit 1 controls the rotation angle of the 1/2 wavelength plate 4 of the drive mechanism 6 in accordance with the X direction and the γ direction of the XY stage 8. For example, the drive mechanism 6 is controlled to make the laser light The direction of polarization is always constant with respect to the direction of movement of the laser light that causes the XY stage 8 to move relative to the substrate 7. The more desirable condition is to control the drive mechanism 6 such that the direction of polarization of the laser light is always the direction of movement of the laser with respect to the substrate 7. Next, the operation of the substrate processing apparatus i of the present embodiment having the above configuration will be described. ^ The laser light emitted by the laser light source 2 is parallelized by the light shaping optical system 3 and the power of the laser light is adjusted. Further, the polarization direction is adjusted by the 1/2 wavelength plate 4 and condensed on the substrate 7 by the collecting optical system 5. The multiphoton absorption is generated inside the substrate 7 by collecting the laser light on the substrate 7', and the glass is sublimated in the ionized region generated by the multiphoton absorption. With the XY stage 8, the substrate 7 is relatively moved with respect to the laser light, and thus the portion which becomes the groove becomes a scribe line. In the present embodiment, the rotation of the 1/2 wavelength plate 4 is controlled so that the direction of polarization of the laser light is always constant with respect to the direction of movement of the laser light with respect to the substrate 7. After the scribe line is formed, in the next cutting step, the substrate 7 is slid along the scribe line to cut the substrate 7. Thereby, the substrate 7 is cut into individual small substrates surrounded by scribe lines. In the substrate processing apparatus 1 of the present embodiment having the above configuration, the polarization direction of the laser light irradiated onto the substrate 7 is controlled in accordance with the moving direction of the laser light with respect to the substrate 7. This reason will be described. When the laser light is moved to the substrate 7 (referred to as scribing), the relationship between the direction of the polarized light of the laser light I02394.doc 1282295 and the direction of the engraved direction and the depth of the dash formed by the scribing is examined. Figure 2 shows the results of this experiment. In this experiment, a glass substrate was used as the substrate 7. As shown in Fig. 2, what is the corresponding laser light relative to the substrate? When the direction of the movement is such that the direction of polarization of the laser light is rotated, the groove formed by the scribe line changes deeply. At this time, the maximum depth of the groove is that the direction of polarization is parallel to the direction of scoring. Head A, it can be said that the depth of the ion region is deepest in the state where the polarization direction is parallel to the scribed direction. Further, it can be seen that the relationship between the minimum a and the maximum b of the groove depth in Fig. 2 is b = i.2a. As a result of the foregoing experiment, as long as the polarization direction of the laser light is maintained parallel to the direction of the scribed direction, the ice degree of the ionized region can be formed to the maximum of the laser irradiation conditions with respect to any of the sculpt. X, even if it is not: 仃 /, to maintain the polarization direction of the laser light and the direction of the scribed direction, the depth of the ionization region can be made constant for any trajectory. For example, when the pulse repetition frequency is 30 kHz, the laser rate is m, and the moving speed of the platform 8 is 60 mm/s, the rotation angle of the laser light is controlled so that the polarization direction of the laser light is perpendicular to the scribe direction. The engraved line = 55. In contrast, when the rotation angle of the control "2 wavelength plate 4 is such that the polarization direction of the laser light is parallel to the scribe direction under the same condition, the groove depth of the scribe line is about 70 μm. The depth to which the angle of the line is always formed opposite to the laser light is as described above, and the direction of movement of the substrate 7 is made constant by the angle of the polarizing light. Therefore, it can be stably scored. In a more ideal situation, when the angle of the polarization direction is parallel to the direction of movement of the laser light 102394.doc 1282295 with respect to the substrate 7, the laser irradiation conditions are determined to be: the most: the scribe, the line. For this reason, a deep dash can be formed at a high speed: by forming a scribing line, the subsequent cutting is made easier. (Second Embodiment) Fig. 3 is a view showing one of the structures of the substrate processing apparatus of the present embodiment. In addition, the same components as those of the third embodiment are denoted by the same reference numerals and the repeated description is omitted.
在本實施型態，於第丨實施型態之基板加工裝置丨追加θ 平台9。0平台9係用以使搭載基板7之灯平台8旋轉。口 平台8與Θ平台9之動作，控制基板7於平面内之㈣ 疋轉。Θ平台9之動作係藉由控制機構10控制。 控制機構Η)係以ΧΥ平台8與0平台9之移動資料為根 康，以貫際時間計算雷射光相對於基板7之進行方向，並 算出如該進行方向與雷射光之偏光方向—致之ι/2波長板* 之角度，控制驅動機構6形成該角度。或者’控制驅動機 構6使雷射光之進行方向與雷射光之偏光方向所 度總是一定。 依據本實施型態不#可形成直、線之刻亂線，亦可形成由 曲線構成之刻劃線。於該狀況下亦可使刻劃線之溝深 1實施型態相同地保持一定。 μ 本發明並不限定為前述實施型態之說明。 例如，於本實施型態，本發明之光學元件之例係使用 1/2波長板4作為例子來說明，但是亦可採用偏光板。例 如，由雷射光源2射出之雷射光並非直線偏光之情形，通 、扁光板之雷射光之偏光方向係沿偏光板之透過轴（光學 102394.doc -13 - 1282295 軸）。因此，藉由控制偏光板之旋轉，可對基板7照射偏光 方向控制之雷射光。 例如，在本實施型態，以XY平台8與0平台9之例進行 說明，但是亦可追加z平台。藉此，可將雷射光之聚光點 控制在基板7之深度方向上。 除此以外，只要不脫離本發明之要旨之範圍都可作各種 變更。 【圖式簡單說明】In the present embodiment, the θ stage 9 is added to the substrate processing apparatus of the second embodiment. The 0 stage 9 is for rotating the lamp stage 8 on which the substrate 7 is mounted. The operation of the mouth platform 8 and the cymbal platform 9 controls the (4) turn of the substrate 7 in the plane. The action of the platform 9 is controlled by the control mechanism 10. The control mechanism 为) uses the moving data of the ΧΥ platform 8 and the 0 platform 9 as the root, calculates the direction of the laser light relative to the substrate 7 in a continuous time, and calculates the direction of the polarization of the laser light. The angle of the ι/2 wave plate* is controlled by the drive mechanism 6 to form the angle. Alternatively, the control drive mechanism 6 always makes the direction of the laser light and the direction of the polarization of the laser light constant. According to this embodiment, a straight line and a line of chaotic lines can be formed, and a scribe line formed by a curve can also be formed. In this case, the groove depth of the score line can also be kept constant in the same manner. μ The present invention is not limited to the description of the foregoing embodiment. For example, in the present embodiment, an example of the optical element of the present invention is described using the 1/2 wavelength plate 4 as an example, but a polarizing plate may also be employed. For example, the laser light emitted by the laser source 2 is not linearly polarized, and the polarization direction of the laser light passing through the flat plate is along the transmission axis of the polarizing plate (optical 102394.doc -13 - 1282295 axis). Therefore, by controlling the rotation of the polarizing plate, the substrate 7 can be irradiated with the laser light of the polarization direction control. For example, in the present embodiment, an example of the XY stage 8 and the 0 stage 9 will be described, but the z stage may be added. Thereby, the light collecting point of the laser light can be controlled in the depth direction of the substrate 7. In addition, various changes can be made without departing from the spirit and scope of the invention. [Simple description of the map]
第1圖係顯示第1實施型態之基板加工裝置之結構之一例 之圖。 第2圖係顯示雷射光之偏光方向與刻劃線方向所構成之 角度與刻劃線之深度之關係之圖。 第3圖係顯示第2實施型態之基板加工裝置之結構之一例 之圖。 【主要元件符號說明】 1 基板加工裝置 2 雷射光源 3 光成形光學系 4 1/2波長板（光學元件） 5 聚光光學系 6 驅動機構 ’ 基板 8 XY平台Fig. 1 is a view showing an example of the structure of a substrate processing apparatus according to the first embodiment. Fig. 2 is a view showing the relationship between the angle formed by the polarization direction of the laser light and the direction of the scribe line and the depth of the scribe line. Fig. 3 is a view showing an example of the structure of a substrate processing apparatus of the second embodiment. [Main component symbol description] 1 Substrate processing device 2 Laser light source 3 Light shaping optical system 4 1/2 wavelength plate (optical element) 5 Concentrating optical system 6 Driving mechanism ’ Substrate 8 XY stage
Q 0平台 控制機構 102394.doc -14-Q 0 platform control mechanism 102394.doc -14-