TWI279456B - Regeneration method for a plating solution - Google Patents

Regeneration method for a plating solution Download PDF

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Publication number
TWI279456B
TWI279456B TW091113655A TW91113655A TWI279456B TW I279456 B TWI279456 B TW I279456B TW 091113655 A TW091113655 A TW 091113655A TW 91113655 A TW91113655 A TW 91113655A TW I279456 B TWI279456 B TW I279456B
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Taiwan
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tin
regeneration
metal
auxiliary cathode
auxiliary
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TW091113655A
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Chinese (zh)
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Thomas Beck
Hans-Jurgen Schreier
Sven Lamprecht
Rolf Schroder
Kai-Jens Matejat
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Atotech Deutschland Gmbh
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1617Purification and regeneration of coating baths

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Electrolytic Production Of Metals (AREA)

Abstract

The invention relates to a method of depositing a layer of metal and to a method of regenerating a solution containing metal ions in a high oxidation state. To regenerate tin ions consumed from a tin plating solution by metal deposition, it has been known in the art to carry the plating solution over metallic tin to cause tin (II) ions to form. However, the amount of tin contained in thus regenerated baths slowly and continuously increases. The solution to this problem is to utilize an electrolytic regeneration cell that is provided with at least one auxiliary cathode and with at least one auxiliary anode. Tin serving for regeneration is electrolytically deposited from the solution onto the at least one auxiliary cathode in the electrolytic regeneration cell. The solution is carried over the tin serving for regeneration in order to reduce formed tin (IV) ions to tin (II) ions.

Description

1279456 A71279456 A7

1279456 A7 ___ B7 五、發明説明(2—)—— "一- 足夠鍵結強度的壓下之前,需要使銅表面粗糙。為了達成 之,至今表面以所謂的黑氧化物處理而被表面地氧化。然1279456 A7 ___ B7 V. INSTRUCTIONS (2—)—— "一- Before the depression of the bonding strength is sufficient, the copper surface needs to be roughened. To achieve this, the surface has so far been surface-oxidized by treatment with so-called black oxide. Of course

而,因此其形成之氧化物層不足以抗酸,使得在鑽孔PCB 物質的製程中被切割的内層,被從PCB物質的樹脂分層, 形成分層。當錫層被用來取代黑氧化物層時,此問題被避 免。為了生產,錫層藉著膠接到電路痕跡的銅表面而被直 接沉積。在後處理中,如果需要,在内層藉著熱及壓力作 用被壓在一起之前,進一步的鍵結化合物被塗覆到錫層[例 如·脲基石夕院及二石夕院交聯劑的混合物(歐洲專利〇 545 216 A2)]。 而在所提及之第二個用途中,當無電子隔離金屬區域必 須被錫塗覆時,錫或錫-鉛合金層可分別被電解地沉積,在 第一及最後提及的情況下,錫不藉著電解方法被沉積,因 為被金屬塗覆之銅區域通常是互相隔灕的,使得其難能建 立電接觸。為此理由’所謂的膠接浴隨即用於錫塗覆。 此類的塗覆浴被敘述於美國專利4,715,894號中。除了 Sn(II)化合物之外,此浴也包含硫基尿素化合物及尿素化合 物。根據歐洲專利0 545 216 A2,硫基尿素、尿素及其衍生 物也可被用做替代物。再者,根據美國專利4,715,894號的 溶液也包含錯合劑、還原劑及酸。因此,所用之Sn(n)化合 物是例如SnS〇4。根據歐洲專利〇 545 216 A2,該浴包含無機 (礦物)酸的Sn(II)化合物,例如··含硫、磷及鹵素之酸類的 化合物;或有機酸類的化合物,例如:甲酸Sn(n)及醋酸However, the oxide layer formed thereby is insufficient to be resistant to acid, so that the inner layer which is cut in the process of drilling the PCB material is layered from the resin of the PCB material to form a layer. This problem is avoided when a tin layer is used to replace the black oxide layer. For production, the tin layer is deposited directly by bonding the copper surface to the circuit traces. In the post-treatment, if necessary, further bonding compounds are applied to the tin layer before the inner layer is pressed together by heat and pressure [for example, a mixture of urea-based stone garden and Ershi Xiyuan cross-linking agent (European Patent 〇 545 216 A2)]. In the second application mentioned, when the metal-free metal regions must be coated with tin, the tin or tin-lead alloy layers can be electrolytically deposited, respectively, in the first and last cases, Tin is not deposited by electrolysis because the copper areas coated by the metal are generally isolated from each other, making it difficult to establish electrical contact. For this reason, the so-called glue bath is used for tin coating. A coating bath of this type is described in U.S. Patent 4,715,894. In addition to the Sn(II) compound, this bath also contains a thiourea compound and a urea compound. According to European Patent 0 545 216 A2, sulphur urea, urea and its derivatives can also be used as a substitute. Further, the solution according to U.S. Patent No. 4,715,894 also contains a binder, a reducing agent and an acid. Therefore, the Sn(n) compound used is, for example, SnS〇4. According to European Patent No. 545 216 A2, the bath comprises an inorganic (mineral) acid Sn(II) compound, for example a compound containing sulfur, phosphorus and halogen acids; or an organic acid compound such as formic acid Sn(n) And acetic acid

Sn(II)。根據歐洲專利〇 545 216 A2,含硫之酸類的Sn(II)鹽為 -6 - 諫紙張尺度適用中國國家標準(CNS) A4規格(210 X四7公董) " ----- !279456 A7 B7 五、發明説明(:3 較佳,即··硫酸或胺基磺酸的鹽類。再者,該浴也可包含鹼 金屬錫酸鹽,如··錫酸鈉或錫酸鉀。此外,在最簡單的情況 下’硫基尿素及尿素化合物分別是硫基尿素及尿素化合物 的未經取代衍生物。根據歐洲專利〇 545 216 A2 ,當錫被沉 積時,與硫基尿素錯合之Cu(I)離子被形成在銅表面。同時 地,金屬錫藉著Sn(II)離子的還原被沉積。在此反應中,銅 被溶解’錫塗層被同時形成在銅表面上。 歐洲專利0 545 216 A2報告Cu(I)硫基尿素錯合物富含於溶 液中’當來自空氣之氧氣被帶到溶液時,Sn(IV)離子也經 由3n(II)離子的氧化被富含於溶液中。然而,當印刷電路板 只被浸入溶液中做處理時,Cu⑴硫基尿素錯合物及Sn(iv)、 離子的濃度不超過固定的濃度值,因為該浴溶液永遠地被 電路板排出,並且以被帶來的水稀釋。然而如果該浴流體 以贺嘴的方式被噴霧到銅表面,相對於該浴體積之物質流 動速率是相當高的。在這些情況下,Cu⑴硫基尿素錯合物 的濃度增加到其達到溶解度限制的程度,並且該錯合物沉 澱為沉積物。沉積堵塞噴嘴並且導致在工廠之可移動機械 零件上的問題。在塗覆浴中,當空氣藉著喷霧後者到達印 刷電路板而以更大份量被帶到浴溶液中時,Sn(iv)化合物、 也藉著sn(ll)離子經由來自空氣之氧氣的氧化而漸增地形成。 為了減少這些問題,下列的條款被敘述於所提及之出版 品中:為了減少Cu⑴硫基尿素錯合物的濃度,塗覆浴之溶液 的一部分從處理容器中取出到另一個槽中,在其中豆被留 置到冷卻,使用大部份的錯合物沉澱並且因此被分離。現Sn (II). According to European patent 〇 545 216 A2, the Sn(II) salt of sulfur-containing acid is -6 - 谏 paper scale applicable to China National Standard (CNS) A4 specification (210 X 4 7 dong) " ----- ! 279456 A7 B7 V. INSTRUCTIONS (: 3 preferred, ie, salts of sulfuric acid or aminosulfonic acid. Further, the bath may also contain an alkali metal stannate such as sodium stannate or potassium stannate. In addition, in the simplest case, 'sulfur urea and urea compounds are unsubstituted derivatives of sulfur-based urea and urea compounds, respectively. According to European Patent 〇 545 216 A2, when tin is deposited, it is wrong with sulfur-based urea. The Cu(I) ions are formed on the copper surface. Simultaneously, the metal tin is deposited by reduction of Sn(II) ions. In this reaction, copper is dissolved and the tin coating is simultaneously formed on the copper surface. European Patent 0 545 216 A2 reports that Cu(I) thiourea complex is enriched in solution. When oxygen from air is brought into solution, Sn(IV) ions are also enriched by oxidation of 3n(II) ions. Contained in solution. However, when the printed circuit board is only immersed in the solution for treatment, Cu(1) thiourea complex and Sn(iv) The concentration of ions does not exceed a fixed concentration value because the bath solution is permanently discharged by the circuit board and diluted with the water being brought in. However, if the bath fluid is sprayed onto the copper surface in the manner of a mouthpiece, relative to the The material flow rate of the bath volume is quite high. In these cases, the concentration of the Cu(1) thiourea complex increases to the extent that it reaches the solubility limit, and the complex precipitates as a deposit. The deposition blocks the nozzle and causes Problems in the movable mechanical parts of the factory. In the coating bath, when the air is brought into the bath solution by a spray to the printed circuit board, the Sn(iv) compound is also passed by the sn (11) Ions are gradually formed by oxidation of oxygen from the air. To reduce these problems, the following clauses are described in the publications mentioned: in order to reduce the concentration of Cu(1)thiourea complex, coating A portion of the bath solution is removed from the processing vessel into another tank where the beans are left to cool, and most of the complex is precipitated and thus separated.

12794561279456

在大致無錯合物的溶液,然後被送到處理容器中。為了進 一步降低在塗覆溶液之Sn(IV)離子濃度,提供用於塗覆溶 液的儲槽,其包含金屬錫。包含於該儲槽的溶液被噴灑到 銅表面,Sn(II)離子被根據下列提出的反應方程式⑴還原, 亚且金屬銅同時根據也在下列提出之反應方程式(2)氧化, 形成Cu⑴離子。與硫基尿素或其衍生物之錯合物分別因此 形成同犄’經由帶到溶液中的氧氣,部份的Sn(n)離子根The solution, which is substantially free of complex, is then sent to a processing vessel. In order to further reduce the Sn(IV) ion concentration in the coating solution, a reservoir for coating a solution containing metal tin is provided. The solution contained in the reservoir is sprayed onto the copper surface, and the Sn(II) ions are reduced according to the reaction equation (1) proposed below, and the metal copper is simultaneously oxidized according to the reaction equation (2) also proposed below to form Cu(1) ions. The complex with thiourea or its derivative thus forms the same 犄' via the oxygen brought to the solution, part of the Sn(n) ion root

裝 據下列提出之反應方程式(3)氧化,形成Sn(IV)離子。經噴 灑的溶液接著被送到儲槽中。在該處,Sn(IV)離子與金屬 錫反應,根據下列提出之反應方程式⑷形成雙倍份量的 Sn(II)離子。 訂The Sn(IV) ion is formed by oxidation according to the reaction equation (3) proposed below. The sprayed solution is then sent to a storage tank. At this point, the Sn(IV) ion reacts with the metal tin to form a double amount of Sn(II) ions according to the reaction equation (4) proposed below. Order

再生錫塗覆膠接浴的方法被敘述於歐洲專利〇 545 216 Μ 中,然而證明導致包含於溶液中之錫濃度連續地升高。因 此,在溶液中Sn(II)離子的濃度必須被;加以永久的分析控制 。此通常在製造條件下不容易為可能,並通常容易導致濃 度大大地變化。其結果是:錫的沉積會變成不可控制。此為 不可接受的。一個克服此問題的方法牽涉到Sn(n)離子之濃 度的自動監測,並且當預先測量範圍之參考值超過或未達 到時,分別容許或消除儲槽中塗覆溶液與金屬錫之間的接 觸。此為非常複雜並且需要相當複雜的裝置。 因此本發明的一個目的是克服所提及之問題,並且發現 容許藉著膠接來踢塗覆銅表面的方法,而無Sn(II)離子含量 變化影響錫的沉積。目標在於使之為可能,而不使用複雜 的裝置。The method of reclaiming tin coated glue bath is described in European Patent 545 545 216 ,, however it has been shown that the concentration of tin contained in the solution is continuously increased. Therefore, the concentration of Sn(II) ions in the solution must be controlled by permanent analysis. This is generally not easy under manufacturing conditions and is often prone to cause large variations in concentration. The result: the deposition of tin becomes uncontrollable. This is unacceptable. A method for overcoming this problem involves automatic monitoring of the concentration of Sn(n) ions and allows or eliminates contact between the coating solution and the tin metal in the reservoir, respectively, when the reference value of the pre-measurement range exceeds or does not reach. This is a very complicated device that requires considerable complexity. It is therefore an object of the present invention to overcome the problems mentioned and to find a method for allowing the copper surface to be coated by gluing without the Sn(II) ion content variation affecting the deposition of tin. The goal is to make it possible without using complicated devices.

1279456 五、發明説明( 對此目的一個解決方式主 — 由4α — Λ疋申Μ專利範圍1的塗覆方法及 申印專利乾圍14的再生方、土 方去。本發明的具體實施例在附屬 申印專利乾圍中被指出。 根據本發明的塗覆方 餛品、 後万去用來產生金屬層,更特定地為含 锡層’並且較佳為純錫層。 β玄方法也可用來沉積包含錫合 金的層。其牽涉到下列的方法步驟: a. 提广金屬塗覆浴’更特定為錫塗覆浴;包含在低氧化 恶的金屬離子,更特定為sn(n)離子; b. 從金屬塗覆浴沉積金屬層到工作片上; c. 提供-種電解再生電池,包含至少一個輔助陰極及至 少一個輔助陽極; d·在電解再生電池中,從金屬塗覆浴電解沉積當做再生 的金屬到至少—個輔助陰極上,該金屬更特定為金屬 锡, e.將金屬塗覆浴與用於再生的金屬接觸,努力還原包含 於金屬塗覆浴之高氧化態的金屬離子·更特;t為Sn(IV) 離子,成為低氧化態的金屬離子-更特定為Sn(II)離子。 一本發明係再生方法用於再生含高氧化態金屬離子·更特 疋為Sr^V)離子·的溶液,為了還原高氧化態的金屬離子, 成為低氧化態的金屬離子_更特定為如⑼離子。此包含下 列的方法步驟: a. 提供-種電解再生電池’包含至少一個辅助陰極及至 少一個輔助陽極; b. 在電解再生電池中,從溶液中電解沉積當做再生的金1279456 V. Description of the invention (a solution to this purpose is mainly - the coating method of the patent range 1 of 4α - Λ疋 及 及 及 及 及 及 及 及 及 、 、 、 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 It is pointed out in the printed patent circumstance. The coated enamel according to the present invention is used to produce a metal layer, more specifically a tin-containing layer 'and preferably a pure tin layer. The β 玄 method can also be used. Depositing a layer comprising a tin alloy. The following method steps are involved: a. a metallization bath is more specifically a tin coating bath; a metal ion contained in a low oxidizing odor, more particularly a sn(n) ion; b. depositing a metal layer from the metal coating bath onto the work piece; c. providing an electrolytic regeneration battery comprising at least one auxiliary cathode and at least one auxiliary anode; d. in the electrolytic regeneration battery, electrolytic deposition from the metal coating bath as Regenerating the metal to at least one auxiliary cathode, the metal being more specifically metal tin, e. contacting the metal coating bath with the metal for regeneration, and striving to reduce the metal ion contained in the high oxidation state of the metal coating bath More specific; t is a Sn(IV) ion, which is a metal ion in a low oxidation state - more specifically a Sn(II) ion. A regeneration method of the invention is used to regenerate a metal ion containing a high oxidation state. The solution of ^V) ions, in order to reduce the metal ions in the high oxidation state, becomes a metal ion in a low oxidation state, more specifically as (9) ions. This includes the following method steps: a. providing an electrolytic regeneration battery 'containing at least one auxiliary cathode and at least one auxiliary anode; b. electrolytically regenerating the battery from the solution as a regenerated gold

X 297公釐) 1279456 五、發明説明(6 屬到至少—個輔助陰極上; c ·將今液與當做再生的金屬接觸,努力還原高氧化態的 屬離子更特定為Sn(IV)離子,成為低氧化態的金 屬離子,更特定為Sn(II)離子。 t此後的含錫層、錫塗覆浴或錫塗覆溶液、金屬錫、 (II)離子Sn(IV)離子及錫電極或含錫電極分別被參考時 ’此必須也般地應用並替代為金屬^、金4塗覆浴、金 屬低氧化怨的金屬離子、高氧化態的金屬離子、金屬電 極或含金屬電極。 本發明的方法可使用還原劑,而更特定地被應用於錫或 錫合金之無電解沉積,用於電解沉積錫及錫合金、和藉著 錫或錫合金膠接的沉積。 藉著膠接的沉積方法’該方法意為被沉積之金屬從基材 金屬中獲得用於還原到氧化態為零的所需電子,該基材金 屬同時氧化並且較佳地因此被溶解β 本發明之方法更特定是以含錫層、用來塗覆銅表面到印 刷電路板或其他電路載體上。 在歐洲專利0545 216Α2敘述的方法中,金屬錫被添加包 含於儲槽中的塗覆溶液裡,以轉化%(1¥)成Sn(n)離子。與 本發明之方法對照,用於再生的金屬錫是從有錫塗覆浴當 中以電塗覆產生。因此本發明之方法避免包含於塗覆浴中 的Sn(II)離子濃度變化。此可被解釋如下: 當錫從無電極、膠接或電極錫浴沉積時,發生下列反應 -10 - :丰紙張尺度適财國S家標準(CNS) A4規格(21GX297公爱) 1279456 A7 B7 五、發明説明(7 )X 297 mm) 1279456 V. Description of the invention (6 belongs to at least one auxiliary cathode; c) Contacting the present solution with the metal as a regenerative metal, and striving to reduce the highly oxidized genus ion is more specific to Sn(IV) ion, a metal ion in a low oxidation state, more specifically a Sn(II) ion. t thereafter a tin-containing layer, a tin coating bath or a tin coating solution, a metal tin, (II) an ion Sn(IV) ion, and a tin electrode or When the tin-containing electrodes are referred to, respectively, the same must be applied and replaced by metal, gold 4 coating bath, metal metal oxide, metal oxide or metal-containing electrode. The method can be used with a reducing agent, and more specifically for the electroless deposition of tin or tin alloys, for the electrolytic deposition of tin and tin alloys, and by the bonding of tin or tin alloys. Method 'This method means that the deposited metal obtains from the substrate metal the desired electrons for reduction to zero oxidation state, the substrate metal is simultaneously oxidized and preferably so dissolved. The method of the invention is more specific Tin-containing layer for coating The surface is applied to a printed circuit board or other circuit carrier. In the method described in European Patent No. 0 545 216, metal tin is added to the coating solution contained in the storage tank to convert % (1 ¥) into Sn(n) ions. In contrast to the method of the present invention, the metallic tin for regeneration is produced by electrocoating from a tin-coated bath. Therefore, the method of the present invention avoids variations in the concentration of Sn(II) ions contained in the coating bath. It is explained as follows: When tin is deposited from an electrodeless, glued or electrode tin bath, the following reaction occurs -10 - :Feng paper size is suitable for the country's standard (CNS) A4 specification (21GX297 public) 1279456 A7 B7 Description of the invention (7)

Sn2+ + 2 e" ..........> 2 Sn (1) 在電極沉積中,電子是源自外部來源之電流,並且經由 陰極傳到Sn(II)離子上。在無電極錫塗覆的情況下,需要沉 積金屬的電子由還原劑提供。在藉著膠接的沉積中,電子 是源自溶解基材金屬-在現在的情況下為銅,在其上錫被沉 積: 2 Cu..........> 2 Cu+ + 2 e' (2) 在一個干擾副反應中,Sn(II)離子在這些浴經由來自空氣 的氧氣氧化,形成Sn(IV)離子:Sn2+ + 2 e"..........> 2 Sn (1) In electrodeposition, electrons are currents derived from an external source and are transmitted to the Sn(II) ions via the cathode. In the case of electrodeless tin coating, electrons that need to deposit metal are provided by a reducing agent. In the deposition by gluing, the electrons are derived from the dissolved substrate metal - in the present case copper, on which the tin is deposited: 2 Cu..........> 2 Cu+ + 2 e' (2) In an interfering side reaction, Sn(II) ions are oxidized in these baths via oxygen from air to form Sn(IV) ions:

Sn2++ 1/2 02 +H20..........> Sn4+ + 2 OH' (3) 形成之Sn(IV)趨向於沉澱錫石(Sn02)。與其中問題相關的 ,尤其用來傳遞塗覆溶液到銅表面的喷嘴會堵塞,並且在 加工工廠中可移動零件的功能會被損害,或該零件甚至被 沉澱固體物質所損害。再者,Sn(IV)離子也具有不利的性 質,其為:根據反應方程式(1)新鮮沉積之錫層,被根據在 此下提出之反應方程式(4)的Sn(IV)離子所攻擊,使得其再被 溶解,至少是一部分。 在塗覆溶液與金屬錫接觸當中,包含於溶液中的Sn(IV) 離子,根據下列對此反應提出的方程式還原成Sn(II)離子, 金屬錫被溶解於製程中互成比例(comproportionation):Sn2++ 1/2 02 + H20..........> Sn4+ + 2 OH' (3) The formed Sn(IV) tends to precipitate the cassiterite (Sn02). The nozzles associated with the problems, particularly the nozzles used to transfer the coating solution to the copper surface, can become clogged and the function of the movable parts in the processing plant can be compromised, or the parts can be damaged even by precipitated solid matter. Furthermore, the Sn(IV) ion also has an unfavorable property: the tin layer freshly deposited according to the reaction equation (1) is attacked by the Sn(IV) ion according to the reaction equation (4) proposed herein. It is dissolved again, at least in part. In the contact of the coating solution with the metal tin, the Sn(IV) ions contained in the solution are reduced to Sn(II) ions according to the following equation proposed for the reaction, and the metal tin is dissolved in the process to be proportional to each other (comproportionation) :

Sn4+ + Sn ..........> 2 Sn2+ (4) 此意為對所形成之每一個Sn(IV)而言,形成兩個Sn(II)離 子。其結果為:當使用根據歐洲專利0 545 216 A2之再生方法 時,包含於塗覆溶液中的錫濃度逐漸增加。 -11 - 参紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)Sn4+ + Sn ..........> 2 Sn2+ (4) This means that for each of Sn(IV) formed, two Sn(II) ions are formed. As a result, when the regeneration method according to European Patent No. 0 545 216 A2 is used, the concentration of tin contained in the coating solution is gradually increased. -11 - The paper scale applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm)

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在進行本發明的方法當中,對照之下,用來還原Sn(IV) 離子的金屬錫是經由電解沉積、源自錫塗覆溶液。其結果 為:該浴之錫平衡不被根據方程式⑷之再生所干擾。用於 再生之金屬錫也根據方程式⑴從Sn(II)離子形成,並且因此 Sn(II)的濃度首先藉著電解沉積降低,經由此反應⑴及副反 應(3)所消耗的Sn(II)離子,再以再生反應⑷產生。因此 Sn(II)離子含-量維持恆定。 因此本發明的方法容許避免由Sn(IV)離子形成所造成的 有害後果,並且同時從Sn(IV)離子再生Sn(II)離子,而無複 雜的裝置及分析支出。 塗覆溶液基本上包含至少一個Sn(II)化合物,至少一個來 自含硫基尿素、尿素及其衍生物之族群的化合物、和至少 一個酸。如果錫合金被沉積,溶液額外包含至少一個被另 外沉積的金屬鹽,例如:一或多個鎳、鉛、汞及/或金的鹽 類。再者,錫塗覆溶液也可包含錯合劑、還原劑及其他組 份部份,像是:用來控制沉積及用來確保塗覆溶液對分解為 穩定的穩定劑、和表面活性劑。通常,該溶液是水溶性的 ,即:包含於溶液中的溶劑包括至少5〇體積百分比的水。其 也可包含有機溶劑,像是例如:醇類及醚酯類。In carrying out the process of the present invention, in contrast, the metallic tin used to reduce the Sn(IV) ions is deposited by electrolysis from a tin coating solution. The result is that the tin balance of the bath is not disturbed by the regeneration according to equation (4). The metal tin used for regeneration is also formed from Sn(II) ions according to equation (1), and thus the concentration of Sn(II) is first reduced by electrolytic deposition, and Sn(II) consumed by the reaction (1) and side reaction (3) The ions are then produced by the regeneration reaction (4). Therefore, the content of Sn(II) ions is kept constant. The process of the present invention thus allows to avoid the deleterious consequences of Sn(IV) ion formation and simultaneously regenerate Sn(II) ions from Sn(IV) ions without complicated equipment and analytical expense. The coating solution essentially comprises at least one Sn(II) compound, at least one compound from the group comprising sulfur-based urea, urea and its derivatives, and at least one acid. If the tin alloy is deposited, the solution additionally comprises at least one additional deposited metal salt, such as one or more salts of nickel, lead, mercury and/or gold. Further, the tin coating solution may also contain a binder, a reducing agent, and other component parts such as a stabilizer for controlling deposition and for ensuring decomposition of the coating solution to be stable, and a surfactant. Typically, the solution is water soluble, i.e., the solvent contained in the solution comprises at least 5 volume percent water. It may also contain organic solvents such as, for example, alcohols and ether esters.

Sn(II)化合物較佳地為無機(礦物)酸的Sn(n)鹽,例如:包 含硫、磷及/或鹵素的酸;然而鹵化氫必須避免,因為其腐 蝕的作用及其趨向加入鹵化錫到沉積錫中。再者,Sn(n)化 合物也可為有機酸的Sn(II)鹽,例如··甲酸Sn(n)、醋酸Sn(n) 及其同型物和芳香酸的鹽,更特定為苯甲酸Sn(n)。較佳的 •12· 張尺度適财®國家料(CNS) A4規格(21G X 297公爱)' --------- 1279456 A7The Sn(II) compound is preferably a Sn(n) salt of an inorganic (mineral) acid, for example, an acid containing sulfur, phosphorus and/or a halogen; however, hydrogen halide must be avoided because of its corrosive action and its tendency to be added to the halogenation. Tin to the deposited tin. Further, the Sn(n) compound may also be a Sn(II) salt of an organic acid, such as a formic acid Sn(n), an acetic acid Sn(n) and a salt thereof, and a salt of an aromatic acid, more specifically a benzoic acid Sn. (n). Preferred •12· Zhang Scale Fit® Country Material (CNS) A4 Specification (21G X 297 public) ' --------- 1279456 A7

鹽類為含硫之酸類的Sn(II)鹽,即:硫酸及胺基磺酸的鹽類 (SnS〇4及Sn(OS〇2NH2)2)。再者該溶液可包含鹼金屬錫酸鹽, 如:锡酸納或錫酸卸。 如果錫合金被沉積,錫塗覆溶液另外包含至少一個其他 合金金屬的化合物,例如:鎳、鉛、汞及/或金的鹽類;這 些鹽類的陰離子可與用於錫鹽的那些相同。 關於Sn(II)化合物及其他合金金屬的化合物,參考美國專 利4,715,894號。其中所揭示之化合物公開在此併於本文為 參考。 包含在錫塗覆溶液中的酸較佳為礦物酸,但也可以是有 機SiL,該酸的陰離子通常與錫鹽的相同,如果必需,與其 他合金金屬之鹽類的相同。 所用之硫基尿素及尿素化合物更特定為未經取代的衍生 物(硫基尿素、尿素),該溶液通常只包含硫基尿素及/或其 衍生物。美國專利4,715,894號指出硫基尿素及尿素的適當 衍生物。在此揭示之衍生物公開在此併於本文為參考。 錫塗覆溶液也可包含錯合劑,在可克-歐斯瑪化學技術 的百科全書(Kirk-Othmer,Encyclopedia of Chemical Technology) ’第3版’第5冊’ 339-368頁中指出的那些特別適合。在此揭 示之錯合劑公開在此併於本文為參考。更特定地,可使用 胺基羧酸及羥基羧酸。在此揭示之錯合劑公開在此併於本 文為參考。 溶液也可包含還原劑、醛,例如:更特定地使用甲搭及 乙酸。再者,還原劑在美國專利4,715,894號中被指出。在 -13- !本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)The salts are Sn(II) salts of sulfur-containing acids, that is, salts of sulfuric acid and aminosulfonic acid (SnS〇4 and Sn(OS〇2NH2)2). Further, the solution may comprise an alkali metal stannate such as sodium stannate or stannic acid. If the tin alloy is deposited, the tin coating solution additionally contains at least one other alloy metal compound such as a salt of nickel, lead, mercury and/or gold; the anions of these salts may be the same as those used for the tin salt. For compounds of the Sn(II) compound and other alloying metals, reference is made to U.S. Patent 4,715,894. The compounds disclosed therein are hereby incorporated by reference. The acid contained in the tin coating solution is preferably a mineral acid, but may also be an organic SiL, and the anion of the acid is usually the same as that of the tin salt, and if necessary, the same as the salt of the other alloy metal. The thiourea and urea compounds used are more particularly unsubstituted derivatives (thiourea, urea), and the solution usually contains only thiourea and/or its derivatives. Suitable derivatives of thiourea and urea are indicated in U.S. Patent 4,715,894. The derivatives disclosed herein are hereby incorporated by reference. The tin coating solution may also contain a miscible agent, as indicated in the Kirk-Othmer, Encyclopedia of Chemical Technology '3rd Edition', Vol. 5, pp. 339-368. Suitable for. The complexing agents disclosed herein are hereby incorporated by reference. More specifically, an aminocarboxylic acid and a hydroxycarboxylic acid can be used. The complexing agents disclosed herein are disclosed herein and are incorporated herein by reference. The solution may also contain a reducing agent, an aldehyde, for example, more specifically using meth and acetic acid. Further, the reducing agent is indicated in U.S. Patent 4,715,894. In the -13-! This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)

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線 1279456 A7 _____ B7 五、發明説明(10 ) 此揭示之還原劑公開在此併於本文為參考。 可類似地使用陰離子、陽離子及兩性表面活性劑。其只 關心表面活性劑是足以適於減少塗覆溶液的表面張力。 用於再生之錫金屬可被沉積在惰性輔助陰極上。藉著惰 性陰極’分離的電極意為當電極被加上陽極極化時,其包 含抗溶解於錫塗覆溶液的物質。更特定地,該輔助陰極可 由鍍鉑鈦製成。 輔助陰極可造型成平板、管子、延伸金屬或例如帶有肋 狀物之平板類的形成本體。該輔助陰極也可以較小片成形 ,例如:具有半徑幾毫米至幾釐米的球狀形狀。在後者的情 況下,這些片狀物可被裝於分別的容器中,例如:塗覆溶液 流經該容器中。為此目的,該片狀物可被置於例如容納於 塔中之有孔底板上,該塗覆溶液經該底板進入並且流經該 塔。將輔助陰極成型為較小片狀物的形式容許Sn(IV)離子 成Sn(II)離子的轉化速率大大增加。 如果使用惰性辅助陰極,根據反應方程式(4),可再溶解 於再生反應中的最大錫份量是前述從該浴中沉積的份量。 其結果是:該浴可連續地再生,而無複雜的分析浴監測,並 且對照根據歐洲專利〇 545 216 A2的方法,在浴中的錫濃度 不升高。 如果例如·對沉積錫到鍍鉑鈦上,對辅助陰極設定的陰 極電流密度是夠高(例如:8安培/平方公寸),可獲得平坦規 模結晶形式的錫塗層。此結晶形狀具有非常大的表面,其 良好地適S於根據方程式(4)的再生反應,因為其相對於錫Line 1279456 A7 _____ B7 V. INSTRUCTIONS (10) The reductants disclosed herein are hereby incorporated by reference. Anionic, cationic and amphoteric surfactants can be similarly used. It is only concerned that the surfactant is sufficient to reduce the surface tension of the coating solution. The tin metal used for regeneration can be deposited on an inert auxiliary cathode. The electrode separated by the inert cathode means that when the electrode is anodic-polarized, it contains a substance resistant to dissolution in the tin coating solution. More specifically, the auxiliary cathode can be made of platinized titanium. The auxiliary cathode can be shaped as a flat plate, a tube, an extended metal or a flat body such as a ribbed plate. The auxiliary cathode can also be formed in a smaller piece, for example, having a spherical shape with a radius of several millimeters to several centimeters. In the latter case, the sheets can be contained in separate containers, for example, a coating solution flows through the container. For this purpose, the sheet can be placed, for example, on a perforated bottom plate contained in a column through which the coating solution enters and flows through the column. Forming the auxiliary cathode into a smaller sheet allows the conversion rate of Sn(IV) ions to Sn(II) ions to be greatly increased. If an inert auxiliary cathode is used, the maximum amount of tin which can be redissolved in the regeneration reaction according to the reaction equation (4) is the amount previously deposited from the bath. As a result, the bath can be continuously regenerated without complicated analytical bath monitoring, and the tin concentration in the bath does not increase in accordance with the method of European Patent No. 545 216 A2. If, for example, the deposition of tin onto the platinized titanium, the cathode current density set for the auxiliary cathode is sufficiently high (e.g., 8 amps/cm 2 ), a tin coating in the form of a flat gauge crystal can be obtained. This crystal shape has a very large surface which is well adapted to the regeneration reaction according to equation (4) because it is relative to tin

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•14- 1279456 A7 -----B7 五、發明説明(11 ) 之重量提供非常大的表面。其結果是:沉積錫的大表面可在 塗覆溶液的預先測量體積中提供。當該輔助陰極是以銅或 例如與銀之銅合金製造時,類似規模的沉積也在當辅助陰 極上產生高電流密度時被觀察到。銅超越例如鍍鉑鈦之惰 性物質的優點是銅較為便宜。雖然此物質在化學錫塗覆溶 液中的持久壽命是有限的。 輔助陰極是與塗覆溶液做電接觸。也提供輔助陰極,其 直接與塗覆溶液做電接觸、或其經由另一個溶液與塗覆溶 液做電接觸。藉著使用辅助陰極及輔助陽極之間的電壓, 電流會在這兩個電極之間產生,當錫被沉積於辅助陰極時 ’輔助陰極被陰極極化,並且輔助陽極被陽極極化。如果 ’冗積在輔助陰極上的錫直接用於再生錫塗覆溶液,在真正 再生期間輔助陰極不被陰極極化,以容許錫從輔助陰極溶 解。因此,以此方法,輔助陰極只是:在每一次錫被沉積在 辅助陰極上時,被間歇性地陰極極化。一旦足夠的錫被沉 積到輔助陰極上,在輔助陰極及輔助陽極之間的電子連接 被中斷,以中止沉積製程。然後,根據此反應之方程式(4) 的溶解反應在這些條件下進行。塗覆溶液必須與輔助陰極 接觸。一旦只有小量的錫或一點都沒有錫留在輔助陰極上 ’錫可再沉積當該電極上。 對再生反應而言,在輔助陰極上形成的金屬錫,可被直 接用於塗覆〉谷液與經金屬錫塗覆之輔助陰極的接觸上,或 從該電極上機械移除,並且在其移除之後與錫塗覆溶液接 觸。 1279456 A7 P______B7 五、發明説明(12 ) 為了機械移除沉積在輔助陰極上的錫,輔助陰極較佳地 «工廠中取出’並且在其上所生長的金屬鱗狀物(scales)被 剝落。然後被移除的錫被置於處理印刷電路板的容器中、 或包含錫塗覆溶液的儲槽中。在該處理容器或儲槽中,錫 被溶解’形成Sn(II)離子,而Sn(iv)離子消耗在製程中。一 旦所有份量、或至少幾乎所有份量之置於該容器或儲槽的 錫被溶解,可添加被沉積在輔助陰極上的額外錫。 來自輔助陰極上的錫、或從輔助陰極上移除並被置於該 處理谷器或儲槽中之金屬錫,溶解於塗覆溶液的速率取決 於許多參數:錫的溶解速率尤其取決於組合物及塗覆浴之溫 度、電解沉積錫的形態、輔助陰極的幾何表面及在立即接 近溶解錫的流動條件。因此該速率可被最佳化。最大的溶 解速率永遠為目標,因此在這些條件下,Sn(IV)離子被真 正地全量還原成Sn(II)離子。此使得可能將包含於塗覆溶液 的Sn(IV)離子濃度最小化。溶解速率越高,在錫塗覆溶液 中的酸濃度越高,該浴的溫度越高,沉積在輔助陰極的錫 表面越大’是相對於錫的重量,辅助陰極的幾何表面越大 ,且在立即接近溶解錫的塗覆溶液傳送越高。 為了將本發明之方法最佳化,在電極再生電池中輔助陽 極周圍的空間(陽極空間)可與輔助陰極周圍的空間(陰極空 間)以一個薄膜分隔。該薄膜較佳的型態是使陽離子(Sn(n)) 離子及Sn(IV)離子)不能通過的方式。因此,該薄膜更特定 地可為陰離子交換薄膜或單選擇性離子交換薄膜。在根據 本發明方法的一個特佳具體實施例中,在陽極空間有一個• 14-1279456 A7 -----B7 V. The weight of the invention (11) provides a very large surface. As a result, the large surface of the deposited tin can be provided in a pre-measured volume of the coating solution. When the auxiliary cathode is made of copper or a copper alloy such as silver, a similar scale of deposition is also observed when a high current density is generated on the auxiliary cathode. The advantage of copper overriding inert materials such as platinized titanium is that copper is relatively inexpensive. Although the longevity of this material in chemical tin coating solutions is limited. The auxiliary cathode is in electrical contact with the coating solution. An auxiliary cathode is also provided which is in electrical contact with the coating solution directly or in electrical contact with the coating solution via another solution. By using the voltage between the auxiliary cathode and the auxiliary anode, a current is generated between the two electrodes. When tin is deposited on the auxiliary cathode, the auxiliary cathode is cathodically polarized and the auxiliary anode is anodically polarized. If the tin accumulated on the auxiliary cathode is used directly to regenerate the tin coating solution, the auxiliary cathode is not cathodically polarized during true regeneration to allow the tin to dissolve from the auxiliary cathode. Thus, in this way, the auxiliary cathode is only intermittently cathodically polarized each time the tin is deposited on the auxiliary cathode. Once sufficient tin is deposited on the auxiliary cathode, the electrical connection between the auxiliary cathode and the auxiliary anode is interrupted to terminate the deposition process. Then, the dissolution reaction according to the equation (4) of this reaction is carried out under these conditions. The coating solution must be in contact with the auxiliary cathode. Once only a small amount of tin or a little tin is left on the auxiliary cathode, tin can be redeposited on the electrode. For the regeneration reaction, the metallic tin formed on the auxiliary cathode can be directly used to coat or be mechanically removed from the contact of the tantalum solution with the metal tin coated auxiliary cathode, and After removal, it is contacted with a tin coating solution. 1279456 A7 P______B7 V. INSTRUCTION DESCRIPTION (12) In order to mechanically remove the tin deposited on the auxiliary cathode, the auxiliary cathode is preferably «taken out of the factory' and the metal scales grown thereon are peeled off. The removed tin is then placed in a container for processing the printed circuit board, or in a reservoir containing a tin coating solution. In the processing vessel or reservoir, tin is dissolved' to form Sn(II) ions, while Sn(iv) ions are consumed in the process. Once all of the portion, or at least almost all of the tin disposed in the vessel or reservoir, is dissolved, additional tin deposited on the auxiliary cathode can be added. The rate of dissolution of tin from the auxiliary cathode or metal tin removed from the auxiliary cathode and placed in the treated vessel or reservoir depends on a number of parameters: the dissolution rate of tin depends inter alia on the combination The temperature of the material and the coating bath, the morphology of the electrolytically deposited tin, the geometric surface of the auxiliary cathode, and the flow conditions immediately approaching the dissolved tin. Therefore this rate can be optimized. The maximum rate of dissolution is always the target, so under these conditions, the Sn(IV) ions are truly reduced to the Sn(II) ions. This makes it possible to minimize the concentration of Sn(IV) ions contained in the coating solution. The higher the dissolution rate, the higher the acid concentration in the tin coating solution, the higher the temperature of the bath, the larger the tin surface deposited on the auxiliary cathode 'is the greater the geometrical surface of the auxiliary cathode relative to the weight of the tin, and The higher the transfer rate of the coating solution immediately approaching the dissolved tin. In order to optimize the method of the present invention, the space around the auxiliary anode (anode space) in the electrode regenerative battery can be separated from the space around the auxiliary cathode (cathode space) by a film. A preferred form of the film is one in which the cation (Sn(n)) ion and the Sn(IV) ion cannot pass. Thus, the film may more particularly be an anion exchange membrane or a monoselective ion exchange membrane. In a particularly preferred embodiment of the method according to the invention, there is a space in the anode space

1279456 A7 B7 五、發明説明(13 ) 一 ----- S文該馱包含在陰極空間裡的塗覆溶液中,並且包含在陽 極空間中的酸為相同的。然而,當包含於錫塗覆溶液中之 I與包合在陽極空間中的該酸不同時,也可獲得非常良好 的再生結果。例如:包含甲烧績酸錫塗覆溶液及包含於陰極 二間之硫酸溶液產生良好的結果。在陰極空間與含錫層被 沉積到印刷電路板的區域間有流體的轉移。 根據本發明之方法的這些進一步改進,容許避免錫塗覆 ’谷液浴直接接觸輔助陽極。因此sn(iv)離子避免在輔助陽 極上形成,否則其降低再生的效率。例如:輔助陽極被浸入 與陰極空間分開的陽極空間中,該陰極空間以陰離子交換 薄膜環繞輔助陰極。在陰極空間中的塗覆溶液,其更特定 地包含例如:SnS〇4及ΗΑ〇4,不能接近輔助陽極,因為該薄 膜避免Sn(II)離子通過。也包含在陰極空間裡的酸溶液也較 佳地填充到陽極空間裡。在現今的實例中,該酸為H2s〇4。 當電流在兩個空間之間流動時,電中性藉硫酸根陰離子的 轉移及相對應的電極反應所保證,即··藉著根據此反應方程 式(1)之輔助陰極上的錫塗覆反應及在輔助陽極上的氧化反 應,其中氧從根據反應方程式(5)從水形成: 2 H20.......> 2 H+ + 2 e· + 02 (5) 當Sn(II)離子被避免與輔助陽極接觸時,根據下列方程 式的Sn(II)離子氧化不發生:1279456 A7 B7 V. INSTRUCTIONS (13) A ----- This is contained in the coating solution in the cathode space, and the acid contained in the anode space is the same. However, when the I contained in the tin coating solution is different from the acid contained in the anode space, very good regeneration results can be obtained. For example, a sulfuric acid solution containing a burnt acid tin and a sulfuric acid solution contained in the cathode have good results. There is fluid transfer between the cathode space and the area where the tin-containing layer is deposited onto the printed circuit board. These further improvements in the method according to the present invention allow for avoiding direct contact of the tin coated ' trough bath with the auxiliary anode. Therefore, the sn(iv) ions are prevented from being formed on the auxiliary anode, which otherwise reduces the efficiency of regeneration. For example, the auxiliary anode is immersed in an anode space separate from the cathode space, which surrounds the auxiliary cathode with an anion exchange membrane. The coating solution in the cathode space, which more specifically contains, for example, SnS〇4 and ΗΑ〇4, is inaccessible to the auxiliary anode because the film prevents the passage of Sn(II) ions. The acid solution also contained in the cathode space is also preferably filled into the anode space. In the present example, the acid is H2s〇4. When the current flows between the two spaces, the electrical neutrality is ensured by the transfer of the sulfate anion and the corresponding electrode reaction, ie by the tin coating reaction on the auxiliary cathode according to the reaction equation (1) And an oxidation reaction on the auxiliary anode, wherein oxygen is formed from water according to the reaction equation (5): 2 H20.......> 2 H+ + 2 e· + 02 (5) When Sn(II) ions When avoiding contact with the auxiliary anode, Sn(II) ion oxidation according to the following equation does not occur:

Sn2+ ………> Sn4+ + 2 e· (6) 另外,輔助陽極也可直接接觸塗覆溶液。在此情況下, 為了也避免根據反應方程式(6)之Sn(II)離子的氧化,集中過 -17- 紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 14 ) 1279456 五、發明説明( 量電壓對此反應必須夠高。此可藉著輔助陽極相對於輔助 陰極之適當幾何安排來實現,例如:在立即接近於輔助陰極 之溶液中缺乏Sn(II)離子,其會導致集中過量電壓,也可達 到陽極空間被容納在與陰極空間分隔之容器裡,兩個空間 經由一個半徑相當小的管線來連通。 上述的集中過量電壓也可在輔助陰極上大量增加電流密 度而達成,使得Sn(II)離子真正不再輔助陰極之立即接近處 獲得。在這些條件下,Sn(II)離子不氧化形成Sn(IV)離子, 但是水氧化形式氧氣。在輔助陽極的電流密度是例如··藉著 還原而非輔助陰極的表面輔助陽極的表面來增加。 在本發明的另一個具體實施例中,至少一個包含被沉積 錫的電極,即例如:金屬錫的電極,可與錫塗覆溶液接觸。 此錫電極被相對於另一個電極而陽極極化,使得錫電極溶 解至少一部份。此可溶錫電極可包含例如,澆注球(p〇ured balls),其座落於適當的容器中,例如:鈦籃(价㈣⑽以让㈨ 中。 在此情況下,錫電極被至少間歇性相對於另一個電極而 陽極極化,使得金屬錫溶解形成Sn(II)離子。 在使用可溶錫電極時,可能藉著消耗於電解沉積反應中 的溶解而產生Sn(II)離子,使得包含於塗覆溶液的錫總量保 持恆定。一旦在陽極溶解之製程中,達到包含於溶液中的 所要Sn(II)離子濃度,在錫電極的陽極溶解反應可藉著中斷 電w的流動而中止。在電流不再供應到可溶錫電極上之後 ,Sn(IV)離子也被在此電極上還原,導致其與電極之金屬 • 18 - ^紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) ------— 1279456Sn2+ .........> Sn4+ + 2 e· (6) In addition, the auxiliary anode may also be in direct contact with the coating solution. In this case, in order to avoid the oxidation of Sn(II) ions according to the reaction equation (6), the -17-paper scale is applied to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 14 ) 1279456 DESCRIPTION OF THE INVENTION (The amount of voltage must be high enough for this reaction. This can be achieved by a suitable geometric arrangement of the auxiliary anode relative to the auxiliary cathode, for example: lack of Sn(II) ions in a solution immediately adjacent to the auxiliary cathode, which can result in By concentrating the excess voltage, it is also possible to achieve that the anode space is accommodated in a container separated from the cathode space, and the two spaces are connected via a relatively small radius line. The above-mentioned concentrated excess voltage can also be achieved by increasing the current density on the auxiliary cathode. So that the Sn(II) ions are truly no longer accessible at the immediate vicinity of the cathode. Under these conditions, the Sn(II) ions do not oxidize to form Sn(IV) ions, but the water oxidizes the form of oxygen. The current density at the auxiliary anode is For example, by adding, rather than assisting the surface of the surface of the cathode, the surface of the anode is increased. In another embodiment of the invention, at least one of the inclusions is sunken. An electrode of tin, that is, an electrode such as a metal tin, may be in contact with the tin coating solution. The tin electrode is anodically polarized with respect to the other electrode such that the tin electrode dissolves at least a portion. The soluble tin electrode may include For example, p〇ured balls, which are housed in a suitable container, such as a titanium basket (valence (4) (10) to let (9). In this case, the tin electrode is at least intermittently opposite to the other electrode and the anode Polarization causes metal tin to dissolve to form Sn(II) ions. When a soluble tin electrode is used, Sn(II) ions may be generated by dissolution in the electrolytic deposition reaction, so that the total amount of tin contained in the coating solution The amount is kept constant. Once the desired concentration of Sn(II) ions contained in the solution is reached in the process of anodic dissolution, the anodic dissolution reaction at the tin electrode can be stopped by interrupting the flow of electricity w. After reaching the soluble tin electrode, Sn(IV) ions are also reduced on this electrode, resulting in metal with the electrode. 18 - ^ Paper scale applicable to China National Standard (CNS) A4 specification (210X297 mm) --- ---— 1279456

錫反應’形成Sn(II)離子。 當使用錫電極時,然而包含於塗覆溶液中的錫濃度,主 要是Sn(II)離子的濃度,必須精確地被分析監測,因為否則 錫電極的溶解會導致包含於塗覆溶液中的錫濃度超過參考 值。在此情況下,錫電極之金屬錫的溶解不自動限制,其 為當只有惰性輔助陰極被使用的情況。 錫塗覆溶液可以不同的方式與工作件接觸:以習用的方 法,該工作件被浸入填於容器中的塗覆溶液浴裡。在此情 況下,與輔助陰極及輔助陽極的安排被座落於在自由空間 中的相同容器裡,或塗覆溶液流經其中的分別容器中。為 此目的在處理容器及其他再生容器之間提供流體導管,在 其中塗覆溶液可在處理容器及再生容器之間循環。 再者工作件可在有塗層室的所謂水平(horizontal)工廠 中被處理。在該水平工廠中,工作件經由該室、以水平的 運送方向被運送。在此情況下,當工作件經由該室運送時 ,塗覆浴液藉著噴嘴的方式被運送到工作件的銅表面,喷 嘴的方式是例如:噴霧喷嘴、流動噴嘴、噴射喷嘴或類似物 。為此目的,溶液是藉著泵的方式、從其被運送到噴嘴處 被保持在儲槽中。在塗覆溶液與鋼表面接觸之後,其被經 由流體導管、從送到儲槽處排出到收集槽人在此情況下, 輔助陰極及輔助陽極的安排被容納於該儲槽中、或在分別 的再生容器中。 因此,敘述一種沉積金屬層的方法及再生含高氧化態金 屬離子之溶液的方法·特別是含Sn(IV)離子之溶液。雖然敘 -19- 1279456 A7 B7 五、發明説明(16 ) 述了特定具體實施例,包括:特定設備、方法步驟、方法參 數、物質、溶液等,對所揭示之具體實施例的不同改變, 習知此藝者在閱讀此揭示時為明顯的。因此,要了解:此具 體實施例只是說明用,並且不限制廣闊的本發明,並且本 發明不只限於所述之特定具體實施例,也在所附之申請專 利範圍的範疇内。 -20- ,本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) V· } ·The tin reacts to form Sn(II) ions. When a tin electrode is used, however, the tin concentration contained in the coating solution, mainly the concentration of Sn(II) ions, must be accurately monitored and analyzed, because otherwise the dissolution of the tin electrode causes the tin contained in the coating solution. The concentration exceeds the reference value. In this case, the dissolution of the tin metal of the tin electrode is not automatically limited, which is the case when only the inert auxiliary cathode is used. The tin coating solution can be contacted with the workpiece in a different manner: in a conventional manner, the workpiece is immersed in a bath of coating solution filled in the container. In this case, the arrangement with the auxiliary cathode and the auxiliary anode is placed in the same container in the free space, or the coating solution flows through the respective containers therein. A fluid conduit is provided between the processing vessel and the other regeneration vessel for this purpose, wherein the coating solution is circulated between the processing vessel and the regeneration vessel. Further, the workpiece can be processed in a so-called horizontal factory with a coating chamber. In this horizontal factory, the work piece is transported through the chamber in a horizontal transport direction. In this case, when the workpiece is transported through the chamber, the coating bath is transported to the copper surface of the workpiece by means of a nozzle, such as a spray nozzle, a flow nozzle, a spray nozzle or the like. For this purpose, the solution is held in the reservoir by means of a pump from which it is transported to the nozzle. After the coating solution is in contact with the steel surface, it is discharged to the collection tank via the fluid conduit, from the supply tank to the collection tank. In this case, the arrangement of the auxiliary cathode and the auxiliary anode is accommodated in the storage tank, or in separate In the regeneration container. Therefore, a method of depositing a metal layer and a method of regenerating a solution containing a metal ion of a high oxidation state, in particular, a solution containing Sn(IV) ions, will be described. Although the specific embodiments are described, including: specific equipment, method steps, method parameters, substances, solutions, etc., different changes to the disclosed specific embodiments, It is obvious that this artist is reading this disclosure. Therefore, it is to be understood that the invention is not intended to be limited -20- , the paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) V· } ·

裝 訂Binding

•4•4

Claims (1)

^94#69ΤΓΓ^655號專利申請案 as 範圍替換本(95年9月)g 範園 ‘祝鱗承丨 月 HJ f ~ 1. 一種沉積錫或錫合金層之方法,包含下列方法步驟·· a. 製備錫或錫合金之塗覆浴,其包含至少一種無機酸 或有機酸之Sn(II),鹽及至少一種與該至少一種錫鹽具有 相同陰離子之酸; b. 從該錫或錫合金之塗覆浴中沉積錫或錫合金層到工 件上,其係藉由使該工件與該錫或錫合金塗覆浴接觸來 進行’該接觸係透過將該工件浸入包含於處理容器内之 該錫或錫合金塗覆浴中或透過在水平工廠中之塗覆室中 處理該工·件而進行; c. 將該錫或錫合金之塗覆浴與再生用之錫金屬接觸, 以將包含於該錫或錫合金塗覆浴之Sn(IV)離子還原成 Sn(II)離子,其藉由將該錫或錫合金塗覆浴移入一包含電 解再生電池之個別再生容器中而進行,該再生容器包含 再生用之錫金屬,該再生容器係與該處理容器分開及分 別與該處理容器或該塗覆室連結,或藉由在處理容器中 使該錫或錫合金塗覆浴與該錫金屬接觸來進行,該電解 再生電池係包含於該處理容器中; 其中該電解再生電池係句合δ ,丨、 係匕3至少一個惰性輔助陰極或 至少一個由銅或銅合金製成之鍤 孟表风夂補助陰極及至少一個輔助 陽極,及於該電解再生電池中,俏 . 你進仃以下方法步驟: i)藉由在該輔助陰極及該輔肋晤 稍助除極之間施加電壓, 使從該錫或錫合金塗覆浴電 电鮮出來之再生用之錫 金屬沉積於該至少一個輔助陰極上;及 11 將該再生用之錫金屬與該 79082-950929.doc 蜀〃孩錫或錫合金塗覆浴接 本紙張尺度適财® ®家鮮(CNS) A4規格(_ χ挪公董) A8 B8 C8^94#69ΤΓΓ^655 Patent Application as Scope Replacement (September 95) g Fan Yuan '祝鳞承丨月HJ f ~ 1. A method of depositing tin or tin alloy layer, including the following method steps·· a. a tin or tin alloy coating bath comprising at least one inorganic acid or an organic acid of Sn(II), a salt and at least one acid having the same anion as the at least one tin salt; b. from the tin or tin alloy Depositing a tin or tin alloy layer onto the workpiece in the coating bath by contacting the workpiece with the tin or tin alloy coating bath to pass the workpiece through the tin contained in the processing vessel Or in a tin alloy coating bath or by processing the workpiece in a coating chamber in a horizontal factory; c. contacting the tin or tin alloy coating bath with the tin metal for regeneration to be included in The Sn(IV) ion of the tin or tin alloy coating bath is reduced to Sn(II) ions by moving the tin or tin alloy coating bath into an individual regeneration vessel containing an electrolytic regeneration battery, the regeneration The container contains tin metal for regeneration, and the regeneration container is Disposing the processing container separately and separately from the processing container or the coating chamber, or by contacting the tin or tin alloy coating bath with the tin metal in a processing container, the electrolytic regeneration battery being included in the treatment In the container, wherein the electrolytic regenerative battery is sinusoidal, 丨, 匕3, at least one inert auxiliary cathode or at least one 锸meng wind 夂 auxiliary cathode made of copper or copper alloy, and at least one auxiliary anode, and In the electrolytic regenerative battery, you can proceed to the following steps: i) to apply electricity from the tin or tin alloy coating bath by applying a voltage between the auxiliary cathode and the auxiliary rib to the auxiliary assisting electrode. a tin metal for regeneration is deposited on the at least one auxiliary cathode; and 11 the tin metal for regeneration is attached to the bath material of the 79082-950929.doc 蜀〃Child tin or tin alloy. Fresh (CNS) A4 specification (_ χ诺公董) A8 B8 C8 1279456 觸’以使Sn(IV)離子與該再生用之錫金屬接觸而 還原成S n (11)離子,其藉由從該輔助陰極上機械 性地移除該再生用之錫金屬、及之後使該再生用 之錫金屬與該錫或錫合金塗覆浴接觸來進行,或 藉由間歇性地使輔助陰極未極化而與該錫或錫合 金塗覆浴接觸來進行。 2.如申請專利範圍第丨項之方法,其中該至少—個輔助陰 極是由鍍鉑的鈦製成。 3 ·如申明專利範圍第丨項之方法,其中錫是藉由調整該陰 極電流密度而以鱗狀物沉積在該至少一個輔助陰極上。 4 ·如申凊專利範圍第i項之方法,其中該至少一個輔助陽 極與該至少一個輔助陰極周圍的空間係以一個薄膜分 隔。 、 5.如申請專利範圍第4項之方法,其中該薄膜係被安裝使 得該Sn(II)離子及Sn(IV)離子不會滲透該薄膜。 6·如申請專利範圍第4項之方法,其中該薄膜為陰離子交 換薄膜或單選擇性離子交換薄膜。 7·如申請專利範圍第4項之方法,其中酸係被提供到環繞 該至少一個輔助陰極的空間中。 8·如申請專利範圍第之方法,其中該含錫之至少一個 電極係與該錫或錫合金塗覆浴接觸,及,其中該至少一 個電極係被相對於至少另—個電極陽極極化,使得該包 含錫之至少一個電極至少部份地被溶解。 9.如申請專利範圍第&quot;員之方法,其中該工件係經由用來沉 79082-950929.doc n1279456 is contacted to reduce Sn(IV) ions to S n (11) ions by contact with the tin metal for regeneration, by mechanically removing the tin metal for regeneration from the auxiliary cathode, and thereafter The tin metal for regeneration is brought into contact with the tin or tin alloy coating bath, or by intermittently contacting the tin or tin alloy coating bath with the auxiliary cathode unpolarized. 2. The method of claim 2, wherein the at least one auxiliary cathode is made of platinized titanium. 3. The method of claim </ RTI> wherein the tin is deposited as a scale on the at least one auxiliary cathode by adjusting the cathode current density. 4. The method of claim i, wherein the at least one auxiliary anode is separated from the space surrounding the at least one auxiliary cathode by a film. 5. The method of claim 4, wherein the film is mounted such that the Sn(II) ion and the Sn(IV) ion do not penetrate the film. 6. The method of claim 4, wherein the film is an anion exchange film or a single selective ion exchange film. 7. The method of claim 4, wherein the acid is supplied to the space surrounding the at least one auxiliary cathode. 8. The method of claim 1, wherein the at least one electrode comprising tin is in contact with the tin or tin alloy coating bath, and wherein the at least one electrode is anodic polarized with respect to at least one other electrode, At least one of the electrodes comprising tin is at least partially dissolved. 9. The method of claiming the patent scope &quot; member, wherein the workpiece is used to sink 79082-950929.doc n Ϊ279456 、申請專利範圍 積金屬片的塗覆室、以水平的方向運送。 〇·—種使含Sn(IV)離子之溶液 係盘$ &amp; 合/夜再生之方法,其中,該溶液 你與再生用之錫金屬接 M ^ 觸以使Sn(IV)離子還原成Sn(II) 其中’係提供一個電解異座φ 电解再生電池,其包含至少一個惰 性輔助陰極或至少一個由 似由銅或銅合金製成之輔助陰極及 少-個輔助陽極,及該方法包含以下方法步驟: 1)肖由在肖輔助陰極及該輔助陽極之間施加電壓, 使·從該錫或錫合金塗覆浴電解出來之再生用之錫 金屬 &gt;儿積於該至少一個輔助陰極上丨及 ··)將。亥再生用金屬錫與該錫或錫合金塗覆浴接觸, 以使Sn(IV)離子與該再生用錫金屬接觸而還原成 S n (11)離子,其藉由從該辅助陰極上機械性地移 除忒再生用錫金屬、及之後使該再生用錫金屬與 該錫或錫合金塗覆浴接觸來進行,或藉由間歇性 地使輔助陰極未極化而與該錫或錫合金塗覆浴接 觸來進行。 -3 79082-950929.doc 本紙银尺度適用中國國家標準(CNS) Α4規格(210X 297公釐)Ϊ 279456, the patent application area The coating chamber of the metal sheet is transported in a horizontal direction. 〇 — — — — — 含 含 含 含 含 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液 溶液(II) wherein 'providing an electrolytic heterogeneous φ electrolytic regenerative battery comprising at least one inert auxiliary cathode or at least one auxiliary cathode made of copper or a copper alloy and a small number of auxiliary anodes, and the method comprises the following Method steps: 1) applying a voltage between the auxiliary auxiliary cathode and the auxiliary anode, so that the tin metal for regeneration from the tin or tin alloy coating bath is accumulated on the at least one auxiliary cathode丨和··) will. The metal tin for regeneration is contacted with the tin or tin alloy coating bath to bring the Sn(IV) ions into contact with the tin metal for regeneration to be reduced to S n (11) ions by mechanically from the auxiliary cathode Removing the tin metal for regeneration, and then contacting the tin metal for regeneration with the tin or tin alloy coating bath, or by intermittently coating the tin or tin alloy with the auxiliary cathode unpolarized Cover the bath to contact. -3 79082-950929.doc This paper is based on the Chinese National Standard (CNS) 银4 specification (210X 297 mm).
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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GEP20105122B (en) 2003-07-16 2010-11-25 Interdigital Tech Corp Method and system for transferring information between network management entities of a wireless communication system
EP1630252A1 (en) * 2004-08-27 2006-03-01 ATOTECH Deutschland GmbH Process for coating antimony containing substrate with tin or tin alloys
JP4998704B2 (en) 2007-01-22 2012-08-15 上村工業株式会社 Method for forming substituted tin alloy plating film, substituted tin alloy plating bath, and method for maintaining plating performance
EP2298960A1 (en) 2009-08-24 2011-03-23 ATOTECH Deutschland GmbH Method for electroless plating of tin and tin alloys
DE102009060676B4 (en) 2009-12-28 2015-07-23 Atotech Deutschland Gmbh Process and device for wet-chemical treatment of items to be treated
CN102586851B (en) * 2011-01-06 2015-03-04 宝山钢铁股份有限公司 Electrolytic method for relieving and reducing tin sludge generated in tin plating solution
EP2671968B1 (en) * 2012-06-05 2014-11-26 ATOTECH Deutschland GmbH Method and regeneration apparatus for regenerating a plating composition
CN106811773B (en) * 2015-05-12 2018-06-08 江苏理工学院 Supercritical composite electroforming system recycling device
CN106011810B (en) * 2016-06-02 2019-01-11 东莞市智源电子科技有限公司 Stannic removal technique in the chemical tinning solution of Copper base material
WO2018077874A1 (en) * 2016-10-24 2018-05-03 Atotech Deutschland Gmbh A method of depositing a tin layer on a metal substrate and a use of a structure comprising a nickel/phosphorous alloy underlayer and said tin layer with said method
CN110387540A (en) * 2019-08-30 2019-10-29 江苏上达电子有限公司 Stannous replenishment system and method in a kind of tin dissolving slot
CN111676470A (en) * 2020-05-29 2020-09-18 广东天承科技有限公司 Simple and soluble high-valence tin reduction method
CN114232030B (en) * 2021-12-23 2023-04-18 广东鑫菱环境科技有限公司 PCB methanesulfonic acid tin stripping waste liquid recycling method
WO2024116456A1 (en) * 2022-11-28 2024-06-06 株式会社村田製作所 Method and device for regenerating plating composition
CN116288292A (en) * 2023-03-20 2023-06-23 聂柱根 Chemical tin liquid tin reduction regeneration copper removal device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1527576A (en) * 1923-02-19 1925-02-24 Wheeling Steel & Iron Company Process of coating conducting materials with tin
US3784455A (en) * 1971-12-28 1974-01-08 Western Electric Co Methods of electrolytic regenerative etching and metal recovery
DE2401719B2 (en) * 1974-01-15 1978-01-19 Vereinigte Aluminium Werke Ag, 5300 Bonn METHOD FOR REGENERATING AND INCREASING THE SERVICE LIFE OF TIN-CONTAINING METAL SALT SOLUTIONS USED FOR THE ELECTROLYTIC COLORING OF ANODISED ALUMINUM UNDER THE ACTION OF AC
JPS5226315A (en) * 1975-08-25 1977-02-26 Fuji Photo Film Co Ltd Process for the recovery of silver from fixer
DE2742718C2 (en) * 1977-09-22 1984-04-19 ESTEL HOOGOVENS B.V., 1970 Ijmuiden Method and device for regenerating a tin-plating electrolyte
US4432844A (en) * 1982-01-28 1984-02-21 Fujisash Company Process for regeneration of electrolyte containing tin salts by reducing the same
US4715894A (en) * 1985-08-29 1987-12-29 Techno Instruments Investments 1983 Ltd. Use of immersion tin and tin alloys as a bonding medium for multilayer circuits
DE3634710A1 (en) * 1986-10-11 1988-04-21 Ver Glaswerke Gmbh DEVICE FOR VACUUM COATING A GLASS DISC BY REACTIVE CATHODAL SPRAYING
CA2083196C (en) * 1991-11-27 1998-02-17 Randal D. King Process for extending the life of a displacement plating bath
JPH06256999A (en) * 1993-03-05 1994-09-13 Kawasaki Steel Corp Method for recovering and regenerating tin plating liquid
US6280596B1 (en) * 1995-05-23 2001-08-28 Weirton Steel Corporation Electrolytic tinplating of steel substrate and apparatus
US5705048A (en) * 1996-03-27 1998-01-06 Oxley Research, Inc. Apparatus and a process for regenerating a CUCl2 etchant
DE19719020A1 (en) * 1997-05-07 1998-11-12 Km Europa Metal Ag Method and device for regenerating tinning solutions
US6251255B1 (en) * 1998-12-22 2001-06-26 Precision Process Equipment, Inc. Apparatus and method for electroplating tin with insoluble anodes
JP3455709B2 (en) * 1999-04-06 2003-10-14 株式会社大和化成研究所 Plating method and plating solution precursor used for it

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