TWI278064B - Methods for forming dual damascene wiring using porogen containing sacrificial via filler material - Google Patents

Abstract

Methods for fabricating dual damascene interconnect structures are provided in which a sacrificial material containing porogen (a pore forming agent) is used for filling via holes in an interlayer dielectric layer such that the sacrificial material can be transformed to porous material that can be quickly and efficiently removed from the via holes without damaging or removing the interlayer dielectric layer.

Description

I2780^47pif, IX. Description of the invention: [Technical field to which the invention pertains] The present invention is mainly directed to a method for fabricating a dual damascene interconnect structure, and in particular, a method for dual damascene, wherein A porogen containing a porogen (porogen) fills a via hole in a layer of electrical interconnects to convert the sacrificial material into a well (4) that can be quickly and efficiently removed from the vias. There is no or no removal of the interlayer dielectric layer. * [Prior Art] As the technology in the field of semiconductor fabrication continues to innovate, integrated circuits can be designed in accordance with smaller design rules (DR), so the integration of semiconductor devices becomes higher and higher. The highly integrated circuit is designed using a multilayer metal interconnect structure, wherein the metal lines/interconnect structures are formed from different gold f layers of an integrated circuit. In general, a multi-layer metal wiring is formed of a metal material having a low electrical resistance and reliability to produce a modified metal such as copper (cu). However, with conventional lithography/etching techniques, it is difficult to pattern copper, especially when the copper lines are formed according to a relatively small design rule. Therefore, the double _ heavy metal damascene method has been developed into a copper metal intermetallic structure capable of forming a highly integrated body. In general, the upper metal wire is formed by a dual damascene process that is electrically connected to the lower metal line through a plurality of conductive paths. For example, the conventional dual damascene method generally includes a process such as that shown later: forming an interlevel dielectric (ILD) layer over one of the lower metal lines on the semiconductor substrate in the interlayer dielectric (ILD) layer Etching a via hole to a predetermined area of 1278〇64pif; filling the via filled with the sacrificial material to form a trench region in the pass-through region, which is aligned with the material to be sacrificed. (4) Path filling = the material shaking means in the trench area of one of the ILD layers, the trench and the via hole contact area. In addition, the sacrificial material 2 protects the side wire in the ILD layer of the lower metal line from the contact hole of the passage, and is free from damage or pollution, which is generated from the air in the trench shape and/or Or followed by an ashing step or a cleaning step to remove the photoresist material. After forming the trench region in the ILD layer, the sacrificial material remaining in the via hole is etched away by using a plurality of etching dopants, via the selected etching chemistry relative to the dielectric in the ILD layer The sacrificial material is of high etch selectivity. Thereafter, the via holes and the trench regions in the ILD layer are filled with a conductive material such as copper to form an upper metal line and via contacts. Although the dual damascene method can form a metal interconnect structure with improved performance, there are more and more problems with these methods for the ever-decreasing design rules. For example, for ever-decreasing design rules, the parasitic resistance and capacitance present between adjacent metal line layers in either a vertical direction may affect the performance of such semiconductor devices. In fact, these parasitic resistances and capacitive elements cause capacitive coupling and crosstalk between adjacent metal lines, thereby degrading the performance of the semiconductor device. In addition, the parasitic resistance and the capacitive element cause an increase in signal leakage and increase the power consumption of the semiconductor device. 7 I278〇6iPi/ To reduce parasitic capacitance, use a low dielectric to form an ILD layer. Although the performance of the low dielectric dielectric material is improved, the low dielectric passage and the conductor device are easily damaged by the side. For example, in the process of filling the sacrificial material in the via hole, the ILD layer formed by the material may be damaged (f, the electric coefficient requires money). Therefore, the provision of a method for removing the residue is caused by damage to the ILD layer, and in particular, does not cause the coffin to become an ILD layer; Decomposed Sacrificial Path Holes The material can be removed from the via holes by thermal decomposition without damaging the material. More specifically, Meagley reveals that the general 2=:: dual damascene method: forming a via contact hole in the semiconductor underlayer; depositing a thermally decomposable sacrifice in the via contact of the via (4); and imaging the ILD layer And the thermally decomposable sacrificial material to form a trench region; and then heating the semiconductor substrate to remove any thermally decomposable sacrificial material within the residual machine via.

Meagley discloses that the thermally decomposable sacrificial material is a material that can be thermally divided in a reduction line at an acceptable temperature, preferably below 450 degrees Celsius, to evaporate, thus removing the thermally decomposable material. The material is sacrificed without derogating the dielectric material with a low dielectric constant. The thermally decomposable material may be a combination of an elastomeric material and a heat engine material, such as a combination of a stone-containing material and a carbonaceous material (e.g., a hydrocarbon-heloxane polymer hybrid material,

8 12780 〆 ca hydroca [bon-siI〇xane po! ymer hybrid materia]). Stealing (4) Step by step, after heating the semiconductor substrate to remove the thermally decomposable sacrificial material from the via contact hole, a chemical cleaning process can be applied to remove the residual/residual thermally decomposable sacrificial material from the via contact hole. The methods disclosed by Meagley may help to reduce the damage to the ILD M formed by the low-k material to a minimum of two: in the process of removing the sacrificial material, revealed by the squeaking The thermally decomposable sacrificial material can in fact cause damage to the ILD layer. More specifically, in the heat treatment of the substrate to thermally decompose = decomposition of the sacrificial material, 纟Meagley society m peak charm? ',,,刀_间' due to loss of the sacrificial material

St ^ _ 仙 material applies contact force, so = shrinkage of the material 导致 causes large stress on the ILD material and should be treated H to thermally decompose the material due to heat - the thermal decomposition of the sacrificial material ^ B after the slave In the chemical cleaning process, it is difficult to remove the two cores and to remove the defects from the via holes. The type of surname chemical and/or money engraving f (4) forming the low dielectric constant material I27_4PI of the 1LD layer. [Description of the Invention] Metals == indicates; ^ Embodiments include the use of a dual (porogen) for the production of a material, relating to the use of a dual metallization method comprising a pore former, the via holes in the second electrical layer Dielectric layer. >孔材# ' Without damaging or removing the inter-layer product into (10)/New material, the material is entangled and broken, when the sacrificial material shrinks, the force is right 贞 + : lake structure 'to prevent the layer from being Second life =

Shot 3 is formed by the formation of fine pores in the base material of the it material, and its conductivity is increased by an etching solution/gas V effect, which is more versatile and has a surface area, and thus the ILD layer The degree of damage to the room efg + / Λ 孔 hole sacrificial material. Deliberately reduced to a minimum f-exemplary embodiment for forming - forming on a semiconductor substrate - the end of the process; the bottom of the method has a lower layer formed thereon: a conductor-ILD (interlayer dielectric) layer; a portion of the termination layer formed through the termination layer, wherein the via: the hole is one of the exposed layers " one comprises a matrix material and becomes === I2780 ^sipif· the via hole; forming an alignment material in the ILD layer, and removing the porogen material from the material to convert the sacrificial= into a porous sacrificial material, wherein the porous sacrificial material comprises a plurality of pores (4); the porous layer of the (4) via hole is exposed to expose a portion of the etch stop layer; and the trench is filled with the via hole to form an interconnection. Nothing in the afternoon - the sacrificial material can be - the organic or inorganic matrix material fish hole, the combined axis of the material, the Hezi county body material removes the pores or voids in the material material while maintaining the matrix 2 , 4 yuan integrity. In an exemplary embodiment, the base material may be a ς-organic SOP (_Lu Shuai Lin, spin-on polymer) material, an aryl (tetra) based material, a polymethyl methacrylate or a vinyl base 2 Acid vinegar based material. In another exemplary embodiment, the base material is two. It is an inorganic S0G (spin_on_glass, spin-on glass) material, such as HSQ (hydrogenated sesquisulfate) or MSQ (methyl sesquiterpene) based material. In an exemplary embodiment, the pore former can be melted from the base material by heating the sacrificial material to a temperature above the boiling point of the material of the 2-pore agent to thereby remove the composition from the sacrificial material. Pore agent. The heating can be carried out in an "empty or nitrogen environment. In an exemplary embodiment," the selected pore former material has a boiling point in the range of from about 15 ° C to about 4 ° C. Fhif - demonstration In an embodiment, the nitrogen-based material may be removed from the sacrificial material by heating the sacrificial material while the sacrificial material is applied with ultraviolet rays. The plasma may be utilized in an exemplary embodiment. Process, which can remove the porous sacrificial process or the -ashing material contains an inorganic group, when the porous sacrifice

=-Expansion school::::: From the sacrifice. When the porous sacrificial material is formed by an organic material, it is used as an inorganic material, and the two layers of the emperor are used, and the process of the river layer is formed, or a thirst eclipse water cremation or H2 based plasma ashing In an example, the cloth::;:^ hole provides (4) the fine cloth on the pupil sacrificial material to quickly remove the surface area of the porous surface, so that the contact hole can be accessed from the hole

The invention is described in detail with reference to the exemplary embodiments of the drawings. / </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; For the sake of clarity, the thickness and size of the layers have been enlarged. It will be further understood that when a layer is depicted "on" or "above" another layer or substrate, the layer may be directly on the other layer or substrate, or a plurality of intervening layers may also be present. All 12

!278〇64, I: The same element in the shape represents the symbol with the same or similar function. The figure 丄 to 9 is the wearing view'. The example is based on the formation of the semi-conducting method. The method of the line layer: Illustrated in Figures 1 to 9 - double metal inlaid ring method, complex medium material (porogen) used to fill - layer; the quality of the sacrificial material can be easily converted into The via hole is removed (4) the porous material which damages or removes the layer/layer, as shown in the figure - the semiconductor substrate (10), which has an (interlayer dielectric) layer (1〇5) (or insulating layer) and is formed on The upper and lower interconnection lines (U0). The substrate (10) can be any semiconductor device, such as a weiqi cut into a frequency circuit. In the second exemplary implementation, the first -ILD layer (10) is formed on the semiconductor substrate (100) and a lower interconnection (11?) is formed in the ILD layer (1?5) by a damascene technique. The lower interconnect (then) may be formed of any suitable material that is typically used to form the integrated circuit conductive layer. For example, the lower interconnect may comprise a metallic material such as copper, copper alloy, aluminum, aluminum alloy, tungsten or other suitable metal or conductive material. Referring to FIG. 2, a structure of a stop layer (120) (or a barrier layer), a second ILD layer (13 〇) and a protective layer (140) (or a hard cover) are sequentially formed on the structure of FIG. Cover mask layer). The residual termination layer (I) is used as an etch stop layer for a subsequent via etch process (described below) to prevent exposure of the lower interconnect (110). The termination layer (m) also uses 13 1278064 18707pif as a diffusion barrier to prevent/reduce the diffusion of the metal material into the ILD layer (130). The etch stop layer (12 Å) is made as thin as possible to maintain the overall low dielectric constant characteristics of the Insulator Stack (120 and 130) while also providing sufficient diffusion barrier. In an exemplary embodiment, the etch stop layer (12 Å) has a thickness of from about 300 angstroms to about 500 angstroms relative to the ilD layer

〇3〇) An insulating material having high etching selectivity is formed. For example, the etch stop layer (120) may be formed of SiC, SiN, SiCN, Sic〇 or Sic〇N, and may be formed, for example, using known techniques. In an exemplary embodiment, the ILD layer (130) is preferably formed of a material having a low dielectric constant of less than about 2. The layer (13 Å) may be formed of an organic polymer material or an inorganic material. More specifically, the ILD layer (130) may be formed of a layer of carbon dioxide, which is bonded with carbon, fluorine or hydrogen atoms, for example, a cerium oxide (Si〇C) layer, a Si〇CH layer, a fluorine-fold Banshixi oxygen burning (_ layer two gas - sesquiter oxysulfonation (HSQ) layer or methyl _ sesquiter oxylate (msq) layer. What kind of material is used for the rice stop layer (12 〇) with the rib layer, (12〇) choose f and /, have low; the material of the electric coefficient is formed. The protective layer (14GX or hard mask layer) to protect the river layer 30) 1: water ^ In the middle of the CMP process, the buffer layer: the protective layer (10) is formed with respect to the ILD layer (1). The formation of the layer described later is: (1) a material... Hanzo layer (14〇) can be composed of /c.xn ^ Λ ^ 〇, ,, 巴, 彖 化物 layer, such as tantalum nitride layer Layer (5) CNM nitride layer (Gu); (9) an insulating stone reflector layer, such as carbon stone layer (sic); (4) a metal vapor layer, table

12780 ° ° such as the ratification group (TaN) layer, titanium nitride (TiO) layer, nitride (wn) layer or aluminum nitride (A1N) layer; (iv) - metal oxide layer, such as alumina ( AL2〇3) layer, oxide (Ta〇) layer or titanium oxide (but) layer; or (7) one layer 'for example, such as SiCb or other materials such as SiOF and SiON are difficult to fight. The next step in the exemplary embodiment process includes forming a via hole in the ILD layer (130). For example, as further described in FIG. 2, an ARL (anti-reflection layer) (144) is formed on the protective layer (140), and a photoresist pattern (145) having an opening (145a) is formed through the opening. (145a) exposing a portion of the surface of the ARL (144). The opening (14 (4) is aligned with the lower interconnect line (11 turns) and is used to form a pattern of via holes (150) as described in Figure 3. Referring to Figure 3', in particular, the photoresist pattern (145) is used. As an etch mask, one or more separate etching processes (147) are applied to the structure of FIG. 2 to thereby sequentially engrave the ARL (144), the protective layer (10) and the rib layer (130) to A via hole (15 Å) is formed downward to the etch stop layer (1). The crucible (130) can be completely known (4) on the process side, such as [the dry-type oxidation process" which is suitable for the side ILD layer (1), which is referred to FIG. 4, after forming the via hole (15〇), using an ashing System = (〇 2 or Η 2 plasma) or organic stripper removed. Thereafter, a layer of sacrificial material is deposited (1 = 15 I2780^7p consisting of a combination of material containing the collision/secret (9) 'sacrificial material (the soil t-material 14 porogen (porogen)). The specific ancient "inorganic matrix material fish" h ▲ sacrificial material (162) is preferably formed by an organic or material from the matrix material, wherein the pore-forming agent pores while maintaining the A = u in the filament material The structural integrity of a number of fine-grained H-based limb materials is generated. The material of the hexamole and ruthenium porphyrin comprises jinyi, yuan or diced and pinentene, of which 10 to 40%. (4) All of the core/silk materials such as polyarylene ether, poly:=::(162) can be-porogen-based material and -ester-based materials of "methyl vinegar or ethylene squamous methacrylic acid A: two _ And::=== normalized fabric type glass body, suitable material for producing a number of pores or voids in the material family (solid object can be used), such as a large number of material pores of the polymer (4) and it is used The type of porogen depends on the compatibility of the porogen. For example, it is preferred to select the thermal stability of the material: The porogen material is thermally cleavable when the temperature is lower than the radix of the substrate. Further, the spheroidal material is preferably selected to treat the sacrificial material while the phase of the porch U material is Separation system: the pore former aggregates and forms a pore former. The 16 I2780UPif material is dispersed throughout the matrix material. The uniform gap filling feature is formed by the material provided to a minimum extent. The formation of the second hole reduces ILt, and the engraving characteristics are similar. The dry etching characteristics are as follows:: The dry dry-type chemical of the material, the sacrificial material (:, for - the specific ratio of the help layer (the dry silk engraving rate is slightly dry, the rhyme rate is better) In the formation of the wire, the sacrificial material remains in the via hole (〗 〖5G), the material 〇 62): U is as follows: Second, the porogen material The residue base === the material of the layer (10)) = the wet layer 牺牲 the sacrificial material 'will depend on the _ select = layer (13G) and the sacrificial material (162) required to form the ild; :=!==, ,, first face #技, 1 田田远, such as 疋 之 之 之 之 之 料Formed to the substrate to form a sacrificial material for hardening the sacrificial material (1_there is a further heat treatment of the base 2) to separate the pore former from the matrix material, and form a shape of 278,044 〇7p,f a porogen material block that is spread over the base material and completely hardens the base material. As described below, a further heat treatment is performed to remove the porogen material to form a porous matrix material. When sacrificing the material solution, the amount of bulk material can be adjusted to obtain the desired porosity relative to the amount of porogen. For example, in the exemplary embodiment, the sacrificial material (162) comprises sacrificial material by weight. (162) A porogen material having a total weight of from about 1% to about 鄕. / The next step in the illustrated process is in the second trench area of the ILD layer (13〇). Referring to Figure 5, the exemplified step begins by forming a second fox (anti-reflective layer) on the layer of the material (10), and forming a second photoresist pattern having an opening (185a). (One)'! The second ARL (anti-reflective layer) (184) is exposed by the opening (185a) as described later. 'The opening (185a) is formed such that it is aligned with the opening β, the cover, and the opening (185a) defines a The rib layer (130) 〒 forms an etched pattern of the trench. = Figure 6, the photoresist pattern (185) is used as a mask, by ί, (184), sacrificial material (162) and 1LD layer (10), to form a trench (called - As an example, the method towel, _ there-(4) chemical dry material engraving chemistry is suitable for the material to be mentioned in the "the ^" selected for the surname ditch ((10)) D Hai dry _ Chemicals, for example, to a ratio of shame (for example) (iv) sacrificial material (day, in particular, Shiqingqing material (10) i7pif 127803⁄4 process requires a trench depth of π (wn under the surface of the silk has an r). In the dry etching process, the residual-part of the unfilled area (=) is replaced by the via hole (10)) and the via hole (10). Referring to FIG. 7, an ashing process resist is used to selectively perform the engraving process to remove the The second photoresist ^ Fig. f85) = 8: Γ, the material (10) or the trap. Thereafter, the process of self-sacrificing material is applied: the remaining sacrificial material (10), 16 = ^;, '). In particular, it is dispersed by a decomposition into a porous matrix material. Thus, the sacrificial material is converted into a body material = the base_wound; the pore-based heat is applied to::, by : The material of the material, from which the heat can be applied. The heat is applied for about 1 minute to about 2 hours. The pore-forming agent is heated in an inert atmosphere. The boiling point of the air, nitrogen or material is about 150 degrees Celsius to the external ray. Applying just deleted, coffee (4) ^ material ^ 19 I2780 ^ ipif In another - exemplary embodiment, the - plasma processing step can be used to make the second porogen material to decompose from the base material, 5 Hai read processing system - Nitrogen-based plasma or hydrogen-based plasma. The potted sacrificial material (162', 162a) is held so that the matrix material is structurally friendly (the matrix-based material retains its structure) while but ',,, f The system is advantageous. Therefore, 'when the sacrificial material (162,) containing the sacrificial material (162) is used, 'there is no stress applied to the force'. Therefore, the ILD layer is detected and cracked. Or damage. In addition, the porosity causes the surface area of the sacrificial material to effectively avoid the hood and can be removed more quickly in the via hole 50) and hard 3 =; ^ = 4 (16., _, and _ in degree. (d) The damage of the 1LD layer is significantly reduced to a minimum in Figure 7 'by various methods One can easily remove the residual 162a?) The material is formed and 1(4)(10)) The porous sacrificial material a can be removed by a micro-stripping process. When the sacrificial material (162) is an inorganic SOG material, After removing the photoresist pattern (185) and the ARL (i84), the sacrificial material formed on the hard mask layer (140) and the sacrificial material in the Ϊ=(15〇) are removed using a process (called As mentioned above, the material (such as an HF solution) is used to selectively etch the sacrificial material at a rate of 8^.

20 12780% pif. If the sacrificial material (162) consists of -S〇G layer (such as -HSq layer) step ^-Ϊρ-Λ?〇) ^ Si〇C&quot;MBf 5 (162)^ hIdH wet chemical square at the expense The material (intermediate disk 6 (130) provides high selectivity between the materials. Since the presence of such pores in the base material is faster than removing the same non-porous base material, it is additionally protected against the LD layer (10)). The shell is low to a small extent, or J multilayer hole 2: organic-based material formation, chemical process or Η2-based electrical material - plasma ash: ^_',,). It is more effective when the sacrifice \ two == can be simultaneously generated by the pores in the : instance. Sacrificial material ::: Remove the sacrificial material _ pore forming agent: = medium in = two: retreat =: uv process. Subsequent to the actual: 匕, 匕 3 package processing process and heat treatment. After removing the porous sacrificial material (10), 162a, </ RTI>, the exemplifying method of the I2780f method includes removing the bottom portion of the surname stop layer (120) exposed to the via hole (150) to expose the lower portion. This portion of the conductive layer (11〇). The etching process can be carried out using known techniques to selectively etch the material of the stop layer (12 Å) without the surname of the ild layer (130). The resulting structure is depicted in the example diagram of FIG. Thereafter, referring to Fig. 9, an upper metal interconnection (23 〇) (double damascene interconnection) is formed by filling the trench (190) with the via hole (15 〇) with a conductive material such as copper. More specifically, in the exemplary embodiment, the method of forming the upper interconnect structure (23Q) includes forming a conformal barrier layer on the sidewalls of the trench (190) and the via = (= 〇) (2) 〇〇). In an exemplary yoke example, the barrier layer (2 turns) may use a sputter lake to form a barrier having a thickness of up to about 500 angstroms, such as TM or (d) (for example). Floor. Thereafter, a layer of conductive material is overlying the barrier layer (2〇〇) to fill the via CMP) with a conductive material (19〇), and then a planarization is performed (for example, Mdn/ϋ The lower flat domain of the knotted divergent surface to the hard mask layer of a metal) line is formed to form a double metal intercalation structure (2〇3). The exemplary method is called _ (single order) Sub-"^ owing step" 'The VFDD uses an SLR (obstruction (the WDD chat step, sacrificial material material. In #^ / 4 with the hole or the money or inorganic material exemplary embodiment, will refer to the figure called 8 = 料 图表 ― ― WDDM ^ 22 I2780 ^ ipif )). Using this exemplary method, the sacrifice, used as a photoresist in the side process. However, we should understand; Figure Γ8 describes the exemplary methods of the method of the field + ^ &quot; 2 and 3 before the processing step: the beginning of the step ==, -10, see Figure 10, in the formation of the path Hole (15〇) (Example: the base material of the material combination, and the Μ pore forming agent (4) material (10) hollow hole formation is reduced to 】 ==; In the embodiment, the base of the sacrificial material (262); the dry example, the enthalpy. If the exemplary embodiments of the above formula are used, the exemplary circle in the figure 10 and the figure 4 is in the form of a figure: ?, (In this case of non-dryness, by the vine: sacrifice as below (Figure 15) will be explained, in the next two layers of sacrifice _ (262) used as - the residual mask. Lieutenant (28f according to Fig. 12, a hard mask layer (2) 2 is formed on the layer sacrificial material (262). The hard mask layer (282) may be a dioxic layer, a nitrogen cut layer, a carbon 23!278〇^4 I87i) 7pif fossil layer, SiON, SiCN, SiOCN, Ta, TaN, Ti, TiN, Al2〇3, BQ, HSQ. The material of the hard mask layer (282) is selected to be made relative to the sacrificial material (262). Having a high etch selectivity. Referring to Figure 12, an ARL (anti-reflective layer) is formed on the hard mask layer (282) and a photoresist pattern (285) having an opening (285a) is formed through the opening (285a) A blade that exposes the surface of the ARL (anti-reflective layer) (284). An opening (285a) is formed to align the via hole (150), and the opening (285a)

Defining an etched pattern 0 for forming a trench region in the ILD layer (130). Referring to Figure 13, the photoresist pattern (285) is used as a shoe mask, and the portions of the ARL (284) are sequentially etched. One or more etching processes (3〇7) are performed by the hard mask layer (282) exposed by the opening (285a), thereby patterning the hard mask layer (282). In the exemplary embodiment, the process is etched (307) to scribe the layers using a single-pattern: (282). In another exemplary embodiment, a separate side process is implemented for each of the layers (282) using a separate side process (3〇7), two L=284) such as an organic material and a hard mask layer _ In order to implement in a given period of time - the second process is to etch the hunting material exposed by the opening (285a): 1. The second = 24 I278〇t engraving process (317) is performed using a dry-process in a concrete == pattern (-) and a chamber. As depicted in Figure 14, a second (four) process (3: sacrifice, material (10) a) is performed to one of the via holes (51 〇), which is the same or lower level. A patterned hard mask layer (282) is exposed using the exemplary engraving, king (7)&apos;. The patterned hard mask layer (282) and the sacrificial material &gt;, &quot;) are used as an etch mask to etch the protective layer (140) and the ILD layer (10) to form a trench _ 1 ^ 二_Process (327). In the exemplary embodiment, the side (10)) and the ILD layer (10) are formed by the exposed portion, the bottom layer of the f layer (1) is formed with a trench (10) to a desired water.

In the exemplary method, a mask (282), a protective layer (10), and a μ layer (1) are used to perform a chemical (4) (327) with respect to the sacrificial material (262). Thus, the sacrificial layer (262) on the protective layer (140) and the ILD cover layer (5); ===:) at a much faster rate (1) = material 262) is used after the hard mask γηλ. ^ d An etch mask is formed, so that the sacrificial material in the via hole is not excessive, thereby protecting the surname (12G) and the lower interconnect (Guan Yanglu to New Zealand). The "etching process 027" depicted in Figure 6 is etched away - a relatively small amount of sacrificial material (dirty). In the example of - shown, the etching process is performed using a dry etching process using CXFy. 7pif 127803⁄4 士在照图16' When using the exemplary method steps described above with reference to Figure 7, a process is performed to remove the porogen material from the residual sacrificial material (262, 262a) to sacrifice the material (262, 262a) Converted to a porous matrix material (262 '262a'). In particular, the sacrificial material (26^2, 262a) is converted to a porous matrix material by decomposing the pockets/regions of the porogen material dispersed throughout the matrix material (262). , 262a,) to thereby form a number of pores or voids in the matrix material. In this way, the sacrificial-porous matrix material, wherein the substrate is a solid phase surrounding the dispersed void/pores. As mentioned, by heating the sacrificial material above the pore-forming agent The base material decomposes the porogen material so that it can be used to make the hole (four) material. Heating is continued for 丨 minutes to 2 hours "" or nitrogen is applied to heat. In n&amp;f _ t, the Buddha's point is about 150 degrees Celsius to a small degree Celsius can be ^_. In the specific implementation of the financial, plus _ sacrificial materials, the material to help remove the pore-forming agent process from the dry example of the application of a The slurry treating agent material Ί pore material 'and thereby performing the plasma treatment to remove the pore-forming via hole slurry or hydrogen-based plasma. The matrix material (262a,) maintains its structural integrity (the 050) of the porous ^ /, ,, °, but more holes are advantageous. Therefore, the surface of the via hole wall is increased.) The stress generated on the side of the 1d layer in the via hole (150) is due to the conventional (four) force. The porous structure effectively increases the sacrificial material

26 127 to 7plf surface area makes it easier to remove the porous material (262, 262a,), so the damage to the ILD layer is significantly reduced to a minimum when the porous material (262a) in the via hole (150) is removed. degree. Next, referring to Fig. 17, the remaining porous sacrificial material (262, 262a') is removed to expose the etch stop layer (12 Å) in the via hole (150). The porous sacrificial material can be easily removed by one of various methods. For example, when the porous sacrificial material (262, 262a,) comprises an organic based material and the IL^ layer (130) is formed of an inorganic material, any suitable engraving process having an etch chemistry is used (for example That is, a wet stripping step) can remove the porous sacrificial material (262, 262a,), and select the material between the engraving and the material of the ILD layer (10), the hemp, and the ILD layer (10). Minnan is selective. In addition, due to the presence of the isotropic material in the base material, the velocity of the sacrificial material is higher than that of the same non-porous base pore material side-side solution/4% turn-in. The increase in the speed of the material makes it effective to remove the porous layer, and the damage of the _ILD layer (13G) is _ idling and additionally prevents the ILD layer (10) from being low to a small extent, or After 2, 2, 262a,), the exemplary method technique implements the remaining _, '^) using the known material, without the IOD layer (10). Figure 7 shows Na Na 27 1278064 1^7 (57pif diagram depicts the resulting structure. Thereafter, referring to Figure 18, by using a conductive material such as copper to fill the trench (190) and the via hole (150) All areas (2, upper metal interconnects (330) (dual damascene interconnects). More specific ancient = 示范 一 示范 示范 示范 示范 形成 形成 形成 上 上 上 上 上 上 上 上 上 = = = = = = = = = = = = = 190) forming a barrier layer (3〇〇) on the sidewalls of the via hole (150). In an exemplary embodiment, for example, using the material of the ^T_T&T; a step of forming a barrier layer (300) to form a barrier layer having a thickness of about 50 angstroms to 5 angstroms. Thereafter, a conductive material is deposited over the conformal barrier layer (300). The via hole (150) and the trench (190) are filled with the conductive material, and then a planarization process (for example, CMP) is performed to planarize the structure; planarization to the hard mask layer (140) Thus completing the formation of a metal line layer having a dual damascene structure (330). ^Although several references have been made herein with reference to the drawings The present invention is not limited to the exemplary embodiments described herein, and various other changes and modifications can be readily made by those skilled in the art without departing from the spirit of the invention. And all such changes and modifications are included in the scope of the invention as defined in the appended claims. FIG. 1 to FIG. 9 are cross-sectional views illustrating A method for forming a metal line layer of a semiconductor device in accordance with several exemplary embodiments of the present invention. 28 I278〇64Plf FIGS. 10 through 18 are cross-sectional views illustrating another exemplary embodiment in accordance with the present invention. A method for forming a metal line layer of a semiconductor device of the embodiment. [Main element symbol description] 100 semiconductor substrate 105 ILD (interlayer dielectric) layer 110 lower interconnection line 120 etch stop layer

130 second ILD layer 140 protective layer 144 ARL (anti-reflective layer) 145 photoresist pattern 145a opening 147 etching process 150 via hole 162 sacrificial material 162a' sacrificial material 162' porous sacrificial material 184 second ARL (anti-reflective layer) 185 Second photoresist pattern 185a opening 190 trench 195 unfilled region 200 barrier layer 29 I2780f 262 262a ^ 262b • 282 284 285 290 295 • 327 sacrificial material sacrificial material sacrificial material hard mask layer ARL (anti-reflection layer) photoresist Third pattern etching process for all regions of the pattern pattern trench

Claims (1)

I27mpif X. Patent Application: L. A method for forming an interconnect structure, comprising: forming a side termination layer on a conductor substrate on a bottom, the semiconductor body base having a lower conductive layer on the lower substrate; on the etch stop layer Forming an ILD (interlayer dielectric) layer. Forming a via hole through the ILD layer to expose one of the etched secondary portions, the via hole being aligned with a portion of the lower conductive layer, &quot; The via hole 'the sacrificial'-containing substrate forms a trench in the ILD layer aligned with the via hole, and is formed to remove the porogen material to transfer the material to the substrate = the porous sacrificial material A porous sacrificial material comprising pores in the via holes of the layer is exposed to expose the side termination method to the portion where the etch stop layer is exposed; and the trench is filled to form an interconnection with the via hole. , 苴中ΐ 1 method of the structure of the axis of money, the use of the second brother of the second brother to form the interconnection structure j to use the graying system to remove the more 4. For example, the application of the patent garden枓. Law, from which the material of sacrifice The material that forms the interconnect structure to the higher than the sacrificial material includes: heating the sacrificial ' to decompose the material into 31 12780 filament pif. pore material from the base material. The fourth method of the range, wherein the heating is performed for about 1 minute to about 23 to form the interconnecting structure. 6. For example, the fourth patent of the scope of the patent application, wherein one of the real structures forms the interconnection structure. Material = heating. The method, wherein the pin of the porogen material forms a square of about 400 degrees Celsius. '150 degrees Celsius to less than the law, forming the outer line of the interconnect structure. Applying a purple method to the sacrificial material when the sacrificial material is heated, wherein the material forming the interconnect structure described in item 1 decomposes the porogen material inclusion application-plasma treatment from the substrate method The method of forming the interconnection structure is as follows: the main body of the invention: the water-based wind-based pen is integrated to implement the plasma treatment. The method, wherein the square U of the interconnection structure described in the first item of the second domain contains the organic material. Method, wherein the present invention forms an interconnection structure as described in Item #11 Acrylic acid from the United States + 匕 3 ♦ aryl ether-based material, a polymethyl 14 · ethyl methacrylate vine-based material. Patent application scope 1 to form the interconnection structure of the party 32 I2780647Pif method The base material of the sacrificial material comprises an inorganic material. The method according to claim 14, wherein the inorganic material is a S〇G (spin-coated glass) material structure, 16 The method of forming according to claim 15, wherein the SOG material comprises a HSq (hydrogenated ruthenium material or an MSQ (fluorenyl sesquioxane) based material. The method of claim </ RTI> wherein the sacrificial material comprises from 1% to about 70% by weight of the porogen material. "Li,,, spoon 18" as described in the patent application scope of the formation of the mutual method, the further step is included in the ILD layer to form - (four) layer.,. Method: the first item in the "connection structure The exposed side wall of the upper hole and the exposed portion of the lower conductive layer deposit a layer of conductive scorpion material on the early layer of the far conformal resistance I1 to fill the secret hole and the ditch; and pass the &amp; This layer of conductive material. 20. The method of claim i, wherein the forming the via comprises: forming an AR (anti-reflection) layer; forming a photoresist pattern on the AR layer. The via layer and the ILD layer form the via hole; and 33 12780 纨pif removes the photoresist pattern and the AR layer. 21. The method of forming an interconnect structure according to claim 1, wherein the trench comprises: forming an AR (anti-reflection) layer; forming a photoresist pattern on the AR layer; The trench is formed by etching the AR layer, the sacrificial layer and the ILD layer by using the photoresist pattern as an etch mask. 22. The method of forming an interconnect structure of claim 1, wherein forming the trench comprises: forming a hard mask pattern; downwardly removing the sacrificial material exposed by the hard mask pattern thereto, At least one predetermined trench level below a surface of one of the ILD layers; the trench is formed by etching the ILD layer down to the predetermined trench level; using the hard mask pattern as an etch mask; and removing the hard mask pattern. The method of forming an interconnect structure according to claim 22, wherein the hard mask pattern is formed to include β· to form a hard mask layer; an AR is formed on the hard mask layer (anti-reflection) a layer); forming a photoresist pattern on the AR layer; and forming the hard mask by using the photoresist pattern as an I-etch mask to engrave the AR layer, the hard mask layer pattern. 24. Forming an interconnect structure as described in claim 22, I 278 〇 〇 p p p p p p p 进一步 进一步 进一步 进一步 进一步 p p p p p p p p p p 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲The method of claim 22, wherein the auxiliary phase is formed to form a layer pattern of the interconnect structure. The hard mask is removed at the time of X/冓. The method of claim 23, wherein the hard mask layer comprises a layer 2 of an interconnect structure of dioxide dioxide, SiON, SiCN, SiOCN, Ta τ Χΐ One of the enamel, chaotic layer, carbonized BQ, HSQ, Shiyi 4壬α'aN, Ti, butyl iN, Al203, high etching selectivity material. [1] The first item has a method for the sacrificial material, and the method according to the third aspect of the patent application, wherein the money stop layer is formed by a side of a nitride rock, a rock mountain, and an interconnect structure, and is opposite to the crucible. The layer has 'stone=lCN or a combination thereof. 28. As claimed in the patent scope! Item selection. Second, the ILD layer comprises a low dielectric constant material: == method:: it: tear-forming the semiconductor device side: one of the dielectric substrates on the semiconductor substrate comprises: forming a m-filled material with a sacrificial material a via hole; a material and a porogen material = via hole, the sacrificial material comprises a base; 35 1278064 187 〇 7pif is converted to -=:: go; more =: - _ material is transferred to the base material 4 And the hole her material contains a porous sacrificial material with pores in it. A method of claim 31, wherein the sacrificial material is formed into a semiconductor device such as a patented organic material. The method wherein the organic material is a semiconductor wafer 34. The material as recited in claim 0.001. The method, wherein the S〇P material comprises a method of forming a semiconductor device, wherein the inorganic material is a method of forming a semiconductor device; —S0G (Spinning 37. If you want to specialize in _36 items = only two buckets. The method, wherein the SOG material contains __ device base material or a MSQ (methyl sesquivalent stone base) substrate = Cut money) 38. The method described in claim 31 of the patent scope = sacrificial, comprising from about 1% to about 70% by weight of the porogen material. The method of claim 31, wherein the method of claim 31 is used in which a wet stripping process is used to remove the hole. 4. The semiconductor device 36 i2780fei7pif is formed as described in claim M. · The 41 士, ashing process removes the porous sacrificial material. 1. The method of claim 31, wherein the sacrificial material from the sacrificial material + to the sacrificial material is higher than the sacrificial material = the hole material comprises heating the porogen material. / 弗 2, to decompose from the base material 42. The method of claim 41, wherein the formation of the semiconductor device described in the item #, T heating performance of about 1 minute to about 2 hours. 43. If the method of applying for the patent scope No. 41%, +, and the method of forming the semiconductor device described in the four items of the name of the Kyrgyzstan is carried out, the twisting is carried out by the environment or the nitrogen environment. The method of claim 41 is to form a semiconductor f-set method in which the Nikko material is placed within a range of about 4 degrees Celsius. ",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The method of claim 31, wherein the porogen-forming material is removed to form the semiconductor device-based material to decompose the porogen material. The 匕3 application-plasma treatment is from the method of claim 47. The towel-nitrogen-based electro-conductor device is as claimed in the patent application of the third electric water. The method includes a dielectric layer comprising a semiconductor device at about 4.2. k small still as described in the patent application scope 3, the formation of the semiconductor device I278〇647pif which is implemented in the construction of the dual damascene interconnection. U• A method of forming a semiconductor device, comprising: Forming a lower conductive layer on the substrate; and a double gold that is inlaid to the contact portion of the lower conductive layer, wherein the dual damascene interconnect is formed: a via hole 'where the via hole is aligned with the blank and the hole'. The sacrificial material comprises - the substrate removes the porous sacrificial material in the via hole; and filling the via hole with a conductive material. Said to form a semi-conductor _ two of the double: genus setting: ^ 38