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Priority claimed from KR1020040103088Aexternal-prioritypatent/KR100745986B1/en
Application filed by Samsung Electronics Co LtdfiledCriticalSamsung Electronics Co Ltd
Publication of TW200623325ApublicationCriticalpatent/TW200623325A/en
Application grantedgrantedCritical
Publication of TWI278064BpublicationCriticalpatent/TWI278064B/en
Methods for fabricating dual damascene interconnect structures are provided in which a sacrificial material containing porogen (a pore forming agent) is used for filling via holes in an interlayer dielectric layer such that the sacrificial material can be transformed to porous material that can be quickly and efficiently removed from the via holes without damaging or removing the interlayer dielectric layer.
TW94143335A2004-12-082005-12-08Methods for forming dual damascene wiring using porogen containing sacrificial via filler material
TWI278064B
(en)