1271836 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於半導體製造過程的工具，特別是一種 用於半導體製造過程的接合台或接合工具之製造方法。 【先前技術】 隨著積體電路（1C)的輪入輪出端子越來越多，對於將具有 大量的輸入輸出端子的1C晶片連接至外部電路的接合台 (Bonding stage)以及接合工具（B〇ndingt〇〇1)的要求也越來 越咼。例如目前便常見有相關專利，針對應用於顯示器驅動冗之 «領域中之捲帶自動接合-Tape Au她ted BQnding也有人稱 Tape Carrier Package (以下簡稱或 Tcp)、Chip 〇n 以咖 (以下簡稱COG)以及Chip 〇n Film/FPC (以下簡稱c〇F)等技 術，提出關於接合工具與接合台之技術改良。 在TAB/TCP技術中’包含絕緣膠帶及形成在絕緣膠帶上之預 定之配線_的自動接合捲帶制於將IG晶片連接至外部電 路’而具有平坦且1C晶片相同尺寸之下表面的接合工具及接人 台’係用以將自動接合膠帶上的内部或外部引線加熱、屋合於& 曰曰片上的金凸塊電極墊以完成封裝。 ^的市場上，獅謝小断手機面板的 θ 乂 :大里運用在17时以下LCD面板上，所謂的COG就 疋反上進行日日片的覆晶封裝，除了滿足高精度要求的考量， 也可減少縣蚊出。⑽F的製減術，是將鶴以電子零 1271836 件直接封裝於軟性電路板（FPC，Flex Printed Circuit)的薄膜 上，可省去傳統印刷電路板，而達到更輕薄短小的目的。 而在COG或COF等技術中，其中用到接合工具以及接合台之 場合為半導體業封裝測試製程中使用熱壓接合，即透過加熱設備 (熱源）穿過位於接合工具或接合台的加熱孔，將熱源的熱，傳 導至接合工具或接合台的接合頂面，將ic晶片直接與面板、薄 膜，藉由 ACF(Anisotropic Conductive Film)、ACP(Anisotropic Conductive Paste)、 NCF (Non Conductive Film)、 NCP (Non1271836 IX. Description of the Invention: TECHNICAL FIELD The present invention relates to a tool for a semiconductor manufacturing process, and more particularly to a bonding pad or bonding tool manufacturing method for a semiconductor manufacturing process. [Prior Art] With the increasing number of wheel-in and turn-out terminals of the integrated circuit (1C), a bonding stage for bonding a 1C wafer having a large number of input and output terminals to an external circuit and a bonding tool (B) The requirements of 〇ndingt〇〇1) are also becoming more and more embarrassing. For example, there are related patents at present, which are used for the automatic connection of the tape drive in the field of display drive redundancy. Tape Au ted BQnding is also known as Tape Carrier Package (hereinafter referred to as Tcp), Chip 〇n Coffee (hereinafter referred to as COG). ) and techniques such as Chip 〇n Film/FPC (hereinafter referred to as c〇F), and technical improvements regarding bonding tools and bonding tables are proposed. In the TAB/TCP technology, an automatic bonding tape including an insulating tape and a predetermined wiring formed on an insulating tape is used to bond an IG wafer to an external circuit and has a flat and 1C wafer under the same size surface bonding tool. And the docking station' is used to heat the inner or outer leads on the automatic bonding tape and to fit the gold bump electrode pads on the & ^ In the market, lion Xie Xiao broken mobile phone panel θ 乂: Dali is used on LCD panels below 17 o'clock, the so-called COG is reversed on the flip chip package of the Japanese film, in addition to meeting the requirements of high precision requirements, Can reduce the county mosquitoes. (10) F's reduction and reduction method is to directly package the crane with electronic zero 1271836 on the flexible printed circuit board (FPC, Flex Printed Circuit), which can save the traditional printed circuit board and achieve the purpose of lighter, thinner and shorter. In the technology such as COG or COF, where the bonding tool and the bonding pad are used, the thermo-compression bonding is used in the semiconductor packaging test process, that is, through the heating device (heat source) through the heating hole located in the bonding tool or the bonding table. The heat of the heat source is transmitted to the bonding top surface of the bonding tool or the bonding stage, and the ic wafer is directly connected to the panel and the film by ACF (Anisotropic Conductive Film), ACP (Anisotropic Conductive Paste), NCF (Non Conductive Film), NCP. (Non
Conductive Paste)等樹脂，在加熱與加壓之下，封裝接合。 另外’在大多SAW (表面彈性波）元件、無線用高頻振盪元 件，係以施加超音波緊密裝配；超音波接合為利用接合工具，利 用接δ工具將振動傳至ic晶片，使其與基板之接合面相互摩擦以 進行接合，完成封裝。 目前習知技術所提的用於作法，大多是在接合台及接合工 具，如FeCoNi台金等低膨脹係數的基體層，經過精密加工成為所 需的造型及精度尺寸之後，再以焊接方式如硬焊法，將已經由 化學汽相沉積法賴之鑽石接合卫作面賴錄板切割或劈裂成 所需_對應接合熱壓的IC Chip本體尺寸大小，悍接黏合成所 需的接合工具及接合台。 惟在上述接合技術中，現有多次製程加工焊接製法生產的接 合工具或接合台，客戶使用中常因焊接的加卫部份不良，導致製 私中的接合L妾合台的彻工侧面，因下方_絲板（如 1271836Conductive Paste) and other resins, under heat and pressure, package bonding. In addition, in many SAW (surface acoustic wave) elements and wireless high-frequency oscillating elements, ultrasonic waves are tightly assembled; ultrasonic bonding is performed by means of a bonding tool, and vibration is transmitted to the ic wafer by the δ tool to make the substrate The joint faces rub against each other to join to complete the package. At present, most of the methods used in the prior art are used in bonding tables and bonding tools, such as FeCoNi Taijin, and other low-expansion matrix layers, which are precisely processed to the required shape and precision dimensions, and then soldered. The brazing method is to cut or split the diamond-bonded lining of the chemical vapor deposition method into the required size of the IC Chip body corresponding to the bonding hot pressing, and the bonding tool required for the bonding and bonding And the joint table. However, in the above-mentioned joining technology, the joining tool or the joining table produced by the conventional multi-process processing welding method is often used in the customer's use due to the poor support of the welding, which leads to the thorough side of the joint L-joining table in the manufacturing process. Below _ silk plate (such as 1271836
SiC碳化梦基板）因焊接附著力不足，導致陶莞基板與基體層在 雜界面_«角，在接合卫具或接合台被使用―段時間後， 合易產生陶絲板#近焊接介面的四㈣角位置發生崩角或碎 裂，使得接合X具或接合台的鑽石工作頂面在接合熱壓製程中發 生平整度不良的縣或接合不確實的賊接合動作，更也有發生 整層陶錄板财或娜，產生不良的IC封裝產品，增加龄工 具或接合台使用者的生產成本。 为一万面 石牧δ丄畀則纟而部的硬度不足，緊密裝配 的陶竞基板材·破片以及靖元件時的切屑都錯及工且的表 面，或者工具前端部與半導體元件之間的滑動易損及其形狀精 度’上述讎时都會減少接合工具的壽命。因此接合工具^ 部使用的材質的硬度也是非常重要，最㈣成工具前端部的物: 硬度在侧kg/刪2以上。目前常用的材質有化學氣相沈積鑽石 (圓）、鑽石燒結體、立方晶氮化魏結體、超硬合金、陶堯 結體、或金屬陶莞等。其中因鑽石燒結體硬度夠，屬較佳 疋 但這類材質價格高昂又物質硬度高，使得加工_，製 =。 且，若欲形成大型立體形狀，將更增加製造成本。 阿° 在接合工具或接合台的導熱工作原理，加熱孔在 熱設備所產生的熱源之後，透過基體層將熱傳導至陶 加 陶兗層將熱傳導致鑽石層的接合卫作頂面，進行W 由 動作。為了避面熱源自接合卫具或接合台的尾端的= 降低無效的熱源逸散，提高基體層導熱至接合面的效 1271836 熱孔到_層介面的基體層材料，改採更易傳熱的抗熱金 二m #目、趣、欽、銳、給、鱗的群組組合金屬材料， ，此=熱金屬所新構成的基體層，與賴的低熱膨脹係數的鐵 (c〇)鎳（Νι)合金材質的尾端及底部的周邊基體單 凡，透過極薄的中間層，譬如金或銀，而仍需緊密的焊接成型步 驟故此傳統的接合工具或接合台的加工製法，需經過多道的加 =^】接’懒缺綱觀補也·產成本。 ,馨於以上的問題’本發明的主要目的在於提供-種用於半導 ㈣接k具及接合台之製造綠，方便製作鑽石膜態 ，々接δ工具或接合台，藉以降低其製造成本。 口此城上述目的，本發明賴露之用於半導體製造過程 具之製造方法，包含τ列步驟:提供—基體層；將複數個 :專…的抗熱金屬粉核塊材置於基體層上方，形成一傳熱層； 7數個陶絲末設置於傳熱層上方，形成—喊層；將複數個 2顆粒設置於_層上方，形成—伽層；及藉由火花放電電 2綠，將鑽石層、喊層、傳熱層、基體層等—體燒結成型 鑽=具有鑽石接合卫作頂層的接合1具或接合台。而前述形成 ==之鑽石顆粒可為鑽石塊材或奈米級以上的鐵石微粉，形成 之陶变粉末更可為陶魏材或奈米級以上的喊微粉，形 專'、、、層更可為向傳熱的抗熱金屬塊材或奈米級以上的金屬微 知’作為紐層更可縣魏材或奈纽以_錄粉。 1271836 藉由上述方式，本發明不需經過大量的材料加工，尤其是不 同材質構成的基體層與陶莞層不需要再進行焊接加工等後製程。 透過本發明，基體層、傳歸、喊層、鑽石層，可透過單—製 私’亦即在火花放漿燒结法的製法下，可以―次牢牢緊密將 各、、且成材料-體燒結成形，不健化了不冊料介面所能承受的 後續接合製程的熱壓所帶來的機械應力，同時可以大幅減少及避 免前述傳統焊接加μ同材料介面所產生的喊層靠近傳教声焊 接介面的四個端角位置發生崩角或碎裂、剝皮或繼的現象，延 長接合工具及接合台的使用壽命。 火化放電電漿燒结法的製法可以縮短多道製程步驟，使得接 。工具與接合台之製造成本與時間可大幅縮減，财發明所提供 之製造方法易於控制接合1具與接合台的品質，而可應用於例如、 /TCP、C〇G、C〇F以及利用超音波法等半導體業封裝製程上。 以下在實施方式巾詳細敘述本發明之詳細特徵以及優點，盆 崎足以餘何熟習_技藝者了解本剌之技_容並據以實 把’且根據本說明書所揭露之内容、中請專利範圍及圖式，任何 热習相關技藝者可輕易地理解本發明相關之目的及優點。 【實施方式】 為使對本發明的目的、構造、特徵、及其功能有進一步的瞭 知，兹配合實施顺細朗如下。以上之_本發日肋容之說明 ^以下之實施方狀說日⑽肋示範與解釋本發明之顧，並且 曰供本發明之專利申請範圍更進一步之解釋。 1271836 清茶閱「第l ®」，揭示依據本發财法製作之接合工具以及 接合台-較佳實施例之示意圖。在此圖巾，—ic晶片或半導體元 件1置於接合台2上；基板或捲帶3以及其上的導線5、保護膜7 係被移往且固毅IC晶片或半導體元件丨的上方，利用接合工具 9、（有個加熱孔）將其加熱及/或加壓以與接合台2上之π晶片 或料體元件1接合。财的接合台2 τ方係與—加熱台^ (曰有 兩個加熱孔）接觸。 、、請茶閱「第2圖」，顯示依據本發明方法製作之用於表面彈性 波（Surface Acoustic Wave)射頻被動零組件元件（SAWDevice) 料波製程的接合工具以及接合台另—較佳實施例之示意圖。在 H，基板15係置於接合台19上，以片或料體元件13 -杜Γί15上，而可利用上方之接合工具17將1C晶片或半導體 此技1 土板u接合。該接合台19可含加熱機構（圖未顯示）。若 有超音波將該兩者接合，接合工具17的上方會設 13接I於基^上操細侧伽1G⑸解導體元件SiC carbonized dream substrate) due to insufficient welding adhesion, the ceramic board and the substrate layer at the miscellaneous interface _« corner, after the joint guard or joint table is used - after a period of time, the easy to produce ceramic board # near welding interface The corner position or chipping occurs at the four (four) angular position, so that the diamond working top surface of the joint X or the joint table is in the county where the flatness is poor in the joint heat-pressing process, or the joint thief joint action is not performed, and the whole layer of pottery occurs. Recording Cai or Na, resulting in poor IC packaging products, production costs for ageing tools or joint users. For the 10,000-faced stone grazing, the hardness of the 丄畀 纟 不足 不足 不足 纟 紧密 紧密 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶The damage and its shape accuracy 'the above 都会 will reduce the life of the bonding tool. Therefore, the hardness of the material used in the joining tool is also very important. The most (4) objects in the front end of the tool: The hardness is on the side kg/decrease of 2 or more. Currently commonly used materials are chemical vapor deposited diamonds (circles), diamond sintered bodies, cubic nitride nitride, superhard alloys, ceramics, or metal pottery. Among them, because the hardness of the diamond sintered body is sufficient, it is preferable. However, such materials are expensive and have high material hardness, which makes processing _, system =. Moreover, if a large three-dimensional shape is to be formed, the manufacturing cost will be further increased. A. In the heat transfer working principle of the bonding tool or the bonding table, after the heating hole is heated by the heat source generated by the heat device, the heat is transmitted to the ceramic layer through the base layer, and the heat is transmitted to the top surface of the diamond layer. action. In order to avoid the surface heat from the end of the joint guard or the joint table = reduce the ineffective heat source escape, improve the base layer heat conduction to the joint surface of the effect of the 1271836 hot hole to the _ layer interface of the base layer material, to change the heat transfer resistance Hot gold two m #目,趣, 钦, sharp, give, scale group combination of metal materials, this = the new base layer of hot metal, and Lai's low thermal expansion coefficient of iron (c〇) nickel (Νι The outer end of the alloy material and the peripheral base of the bottom are passed through a very thin intermediate layer, such as gold or silver, and still require a close welding process. Therefore, the traditional bonding tool or the processing method of the bonding table needs to go through multiple channels. Add = ^] to pick up 'lazy lack of view and make up the cost of production. The problem of the above is 'the main purpose of the present invention is to provide a green for the semi-conductive (four) pick-up and joint table, to facilitate the production of diamond film state, splicing the δ tool or the joint table, thereby reducing the manufacturing cost thereof. . The above object of the present invention, the manufacturing method of the invention for use in a semiconductor manufacturing process, comprising the step of τ column: providing a substrate layer; placing a plurality of heat-resistant metal powder core blocks exclusively above the substrate layer Forming a heat transfer layer; 7 a plurality of pottery filaments are disposed above the heat transfer layer to form a shout layer; a plurality of 2 particles are disposed above the _ layer to form a gamma layer; and by spark discharge electricity 2 green, The diamond layer, the shout layer, the heat transfer layer, the base layer, and the like are sintered to form a drill having a joint of a diamond joint and a joint. The diamond particles forming the above == may be diamond blocks or fine powder of iron above the nanometer level, and the ceramic powder formed may be a ceramic powder or a nano powder above the nano level, and the shape is more specific, and the layer is more The heat-resistant heat-resistant metal block or the metal above the nano-level is known as the nucleus. 1271836 By the above manner, the present invention does not need to undergo a large amount of material processing, and in particular, the base layer and the ceramic layer composed of different materials do not need to be subjected to a post-welding process such as welding. Through the invention, the base layer, the return layer, the shouting layer and the diamond layer can be made through the single-made private method, that is, under the manufacturing method of the spark-slurry sintering method, the materials can be firmly and closely-separated. The body sintering forming does not improve the mechanical stress caused by the hot pressing of the subsequent joining process which can be withstood by the unloading interface, and can greatly reduce and avoid the shouting layer generated by the aforementioned conventional welding plus μ material interface. The four end positions of the acoustic welding interface are chamfered or chipped, peeled or succeeded, prolonging the service life of the bonding tool and the bonding table. The igniting and discharging plasma sintering method can shorten the multi-step process steps and make the connection. The manufacturing cost and time of the tool and the joint table can be greatly reduced, and the manufacturing method provided by the invention can easily control the quality of the joint and the joint table, and can be applied to, for example, /TCP, C〇G, C〇F, and utilization. In the semiconductor industry packaging process such as the acoustic wave method. In the following, the detailed features and advantages of the present invention will be described in detail in the embodiments, and it is sufficient for the skilled person to understand the skills of the presenter _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The related objects and advantages of the present invention will be readily understood by those skilled in the art. [Embodiment] In order to further understand the object, structure, features, and functions of the present invention, the implementation will be described as follows. The above description of the ribs of the present invention ^ The following implementation of the formula (10) ribs demonstrates and explains the scope of the present invention, and further explains the scope of the patent application of the present invention. 1271836 Tea Read "Ten ®" to disclose a joining tool and a joining station - a preferred embodiment of the preferred embodiment. In this case, the ic wafer or the semiconductor element 1 is placed on the bonding stage 2; the substrate or the tape 3 and the wires 5 and the protective film 7 thereon are transferred to the top of the IC chip or the semiconductor device. It is heated and/or pressurized by means of a bonding tool 9, (with a heating hole) to engage the π wafer or body element 1 on the bonding stage 2. The junction table 2 τ of the money is in contact with the heating station ^ (there are two heating holes). Please refer to "Figure 2" for a joint tool for the surface acoustic wave component of the surface acoustic wave component (SAWDevice) prepared by the method of the present invention, and a bonding table. A schematic diagram of an example. At H, the substrate 15 is placed on the bonding stage 19, on the sheet or body member 13 - and the 1C wafer or the semiconductor 1 slab u can be joined by the bonding tool 17 above. The bonding station 19 can include a heating mechanism (not shown). If there is an ultrasonic wave to join the two, the upper side of the bonding tool 17 will be set to 13 on the basis of the fine side gamma 1G (5) de-conducting element
⑽實=、，=^|線接合方法，例如捲帶自動接合 (Ch. 9 ( ip Chip) 、COG (Chip on giass)或 c〇F 接合或上述之超音波法結合’所利用的接合工具與 至「二 文在本為明書中僅能略舉以上幾個代表例子藉以說明本發明 1271836 之概念，而非將本發明限制於該些例子。 上述接合台2、19及/或接合工具之前端部1〇a、1〇b、1〇c、 l〇d (第1圖的i〇)可由鑽石膜組成，而依據本發明，其製造方 法之-較佳實施例，如「第4A圖」、「第4β圖」及「第5圖」所 不，可包含:提供一基體層1〇1 (步驟1〇〇)，基體層1〇1 一般可為 低膨脹係數的鐵（Fe)、# (⑻、銻（Ni)之合金粉末，或是因 瓦合金（Invar)、科伐合金（K〇var)粉末、不鏽鋼（Stainless Steel)粉末（亦可為塊材或是粉末及塊材之混合）。 然後，將數個高傳熱的抗熱金屬粉末（亦可為塊材或是粉末 及塊材之混合），鋪設於基體層1〇1上方（步驟11〇)而構成一傳 熱層102，其中傳熱層1〇2的可由高傳熱的抗熱金屬組成，譬如 為鎢、鉬、鈕、鈦、鈮、铪、銅等，亦可採用與基體層1〇1相同 的材料。。 再將複數個陶磁粉末及陶磁塊材’舖設於傳熱層102的上 方，形成陶瓷層103 (步驟120);這些陶瓷粉末或塊材之材質可 為鼠化銘（A1N)、聚合晶立方鼠化爛（PcBN)、立方氮化蝴（〔BN) 或碳化矽（SiC)，亦可為與鑽石微粉混合的碳化矽微粉，亦可為所 述之陶瓷粉末及塊材之材質的混合組合，亦可採用與傳熱層1〇2 相同的材質。此外，也可以將陶瓷層103之材料係與傳熱層1〇2 之材料混合後，共同成形於基體層101上方。 然後使複數個鑽石粉末及複數個鑽石塊材混合所形成的鑽石 層104置於陶瓷層103上方（步驟130)，其中鑽石粉末可為奈米 1271836 =:T層104亦可單獨採用鑽石粉末或— 、、且成此外’也可以將陶奢厚彳的4 U，， 混合後，共同成形於傳埶層曰 1Q2二料係與鑽石層104之材料 102、陶#咖 上方。上述基體層彻、傳熱層 參閱「第4C圖」及「第4D m γ — 屏、附μ撙^ 圖」所不，上述各基體層、傳熱 外===的橫切剖面，各層由相同材質構成之外，各 環狀式的橫㈣面或含相異射的不同幾何 如乐4C圖」所示的橫切剖面，由不同材質 Z複^環狀式橫切剖面的異f材料結構層邮、二二 ::型=:’各職一、，- _’施《找錢電賴縣， ：：：：：^ 二的而一體成型，而完成整個鑽石接合工具及鑽石接 ^番=_)。而本實_之火魏電電賴結法燒社 、-直扣所施之最大施力值為麵仟钱⑽，最大電流 '、、〇〇〇安培（A)，最大温度值為2〇〇〇〇c。 綜上騎，本發日狀製財雜為精簡，只魏序鋪設好鑽 田、陶-尤層、傳熱層、基體層之每種組成材料，即可 、 放電電漿燒結法-體燒結成型為接合工具及接合台，再透過^ 12 1271836 的精密減加工料，達料同造料 對於整體接合4與接合“言， 4尺寸精度，因此 IV_ x 〃、表4成本便可降低。 雖然柄明以刖述之實施例揭露如上，妙 發明。在不脫離本發明之精神和範圍内，所^ 限定本 屬本發明之專利保護範圍。關 二之更動與潤飾’均 所附之申請專利範圍。 本w所界疋之保護範圍請參考(10) Real =,, = ^ | wire bonding methods, such as tape automated bonding (Ch. 9 ( ip Chip), COG (Chip on giass) or c〇F bonding or the above-described ultrasonic method combined with the use of bonding tools And the following examples are merely illustrative of the present invention, and the present invention is not limited to the examples. The above-mentioned bonding table 2, 19 and/or bonding tool The front ends 1〇a, 1〇b, 1〇c, l〇d (i〇 of Fig. 1) may be composed of a diamond film, and according to the present invention, a preferred embodiment thereof, such as "4A" The figure "," "4th figure" and "figure 5" may include: providing a base layer 1〇1 (step 1〇〇), and the base layer 1〇1 may generally be a low expansion coefficient iron (Fe) , # ((8), 锑 (Ni) alloy powder, or Invar, Kovar powder, stainless steel powder (can also be bulk or powder and block Mixing.) Then, several high heat transfer heat resistant metal powders (which can also be a block or a mixture of powder and bulk) are laid on the base layer 1〇1. (Step 11A) to form a heat transfer layer 102, wherein the heat transfer layer 1〇2 can be composed of a heat transfer resistant metal having high heat transfer, such as tungsten, molybdenum, button, titanium, tantalum, niobium, copper, etc. The same material as the base layer 1〇1 is used. A plurality of ceramic powders and ceramic blocks are placed on top of the heat transfer layer 102 to form a ceramic layer 103 (step 120); the materials of the ceramic powder or block can be It may be a mouse powder (A1N), a polymerized crystal cubic rat rot (PcBN), a cubic nitriding butterfly ([BN) or a tantalum carbide (SiC), or may be a fine powder of tantalum carbide mixed with a diamond powder, or The material of the ceramic powder and the material of the block may be the same material as the heat transfer layer 1〇2. Alternatively, the material of the ceramic layer 103 may be mixed with the material of the heat transfer layer 1〇2. Formed above the base layer 101. The diamond layer 104 formed by mixing a plurality of diamond powders and a plurality of diamond blocks is then placed over the ceramic layer 103 (step 130), wherein the diamond powder can be nano 1271836 =: T layer 104 Diamond powder or -, and, in addition, can also be used alone. The extra-large 4 U, after mixing, is co-formed on the material layer 102 of the 1Q2 two-material system and the diamond layer 104, and the top of the pottery. The base layer and the heat transfer layer are referred to as "4C" and "4D m γ - screen, attached μ 撙 ^ figure", the above-mentioned base layer, cross-section of heat transfer ===, each layer is made of the same material, each ring-shaped horizontal (four) face or Cross-cut profile shown by different geometries with different beams, such as Le 4C, is made up of different materials, Z, and ring-shaped cross-sections of different f-material structure layers, two-two:: type =: ,, - _ 'Shi "Looking for money, Lai County, :::::^ two and integrated, and complete the entire diamond bonding tool and diamonds = _). The maximum value of the force applied by the fire 魏 魏 魏 魏 魏 - - - - - - - - - - - - - - 直 直 直 ( ( ( ( 最大 最大 最大 最大 最大 最大 最大 最大 最大 最大 最大 最大 最大 最大 最大 最大 最大 最大〇〇c. In general, riding, the daily shape of the system is simplified, only the Wei order laying of each material of the drilling field, the pottery-special layer, the heat transfer layer and the base layer, ie, the discharge plasma sintering method-body sintering Formed as a bonding tool and a bonding table, and then through the precision minus material of ^ 12 1271836, the material is the same as the joint 4 and the joint size, so the IV_ x 〃, Table 4 cost can be reduced. The invention is disclosed in the above-mentioned embodiments, and the invention is not limited to the scope of the invention, and the scope of the patent protection of the present invention is limited. Scope. Please refer to the protection scope of this w boundary.
f圖式簡單說明J 们圖’顯示依據本發明方法製作 較佳實施例之大概示意圖; ^及接合台一 第2圖’顯示依據本發财法製作 —較佳實施例之大概示意圖；、 ^以及接合台另 =至第顯示接合工具之不同態樣； 第4β ^ I f :接合工具之接合面長邊側視結構態樣，· 第4C 接合工具之接合面短邊側視結構態樣； 態樣；θ ^接合工具之環狀式勤7剖面異料結構層 二：本發明製造接合工具前端部之方法流程圖。 1 半導體元件 接合台 13 2 1271836 3 基板或捲帶 5 導線 7 保護膜 9 接合工具 10 接合工具之前端部 10a 接合工具之前端部 10b 接合工具之前端部 10c 接合工具之前端部 lOd 接合工具之前端部 11 加熱台 13 半導體元件 15 基板 17 接合工具 19 接合台 21 超音波放大器 101 基體層 102 傳熱層 103 陶瓷層 104 鑽石層 105 環狀式橫切剖面的異質材料結構層 106 環狀式橫切剖面的異質材料結構層 107 環狀式橫切剖面的異質材料結構層 14 1271836 108 橫切剖面的異質材料結構層 109 橫切剖面的異質材料結構層 步驟100 提供一基體層 步驟110 將傳熱層設置於基體層上方 步驟120 將陶莞層設置於傳熱層上方 步驟130 將鑽石層設置於陶竟層上方 步驟140 藉由火花放電電漿燒结法，將鑽石層、 陶莞層、傳熱層與基體層一體燒結成型 為接合工具或接合台 15BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a preferred embodiment of a method according to the present invention; ^ and a junction table a second diagram 'showing a schematic diagram of a preferred embodiment according to the present invention; And the different aspects of the bonding table to the display bonding tool; 4β ^ I f : the side view of the bonding surface of the bonding tool, and the side surface structure of the 4C bonding tool; θ ^ Engagement tool ring type 7 cross-section dissimilar structure layer 2: Flow chart of the method for manufacturing the front end portion of the bonding tool of the present invention. 1 semiconductor component bonding stage 13 2 1271836 3 substrate or tape 5 wire 7 protective film 9 bonding tool 10 bonding tool front end 10a bonding tool front end 10b bonding tool front end 10c bonding tool front end 10d bonding tool front end Portion 11 Heating stage 13 Semiconductor component 15 Substrate 17 Bonding tool 19 Bonding stage 21 Ultrasonic amplifier 101 Base layer 102 Heat transfer layer 103 Ceramic layer 104 Diamond layer 105 Heterogeneous material structure layer of annular cross section 106 Circular cross section Profile of heterogeneous material structure layer 107 annular cross-section profile of heterogeneous material structure layer 14 1271836 108 cross-section profile of heterogeneous material structure layer 109 cross-section profile of heterogeneous material structure layer step 100 provides a substrate layer step 110 The step 120 is disposed above the substrate layer, and the ceramic layer is disposed above the heat transfer layer. Step 130: placing the diamond layer above the ceramic layer. Step 140: by spark discharge plasma sintering method, the diamond layer, the ceramic layer, and the heat transfer layer The layer is integrally sintered with the base layer into a bonding tool or bonding table 15