JP4762064B2 - Bonded body, wafer support member using the same, and wafer processing method - Google Patents

Description

The present invention, a ceramic member and metal - and about the joined body of the ceramic multi engagement member, further a wafer support member for holding the semiconductor wafer in the deposition apparatus or an etching apparatus used in the manufacture of semiconductor chips, placing particular wafer with or heating or holds the placed wafer surface about the electrostatic chuck or electrostatic chuck with a heater for processing under plasma.

  In film forming processes and etching processes such as PVD, CVD, sputtering, SOD, and SOG, which are processing processes for semiconductor wafers (hereinafter referred to as wafers) for manufacturing semiconductor devices, the wafers to be processed are uniform and uniform in thickness. It is important to form a film and to perform a processing process for etching the formed film at a uniform depth. For this reason, in order to hold the wafer firmly when processing the wafer as the wafer support member, an electrostatic chucking electrode is arranged on the inside of the wafer support member or on the surface opposite to the wafer mounting surface. There is a wafer support member having a function of an electrostatic chuck that applies a voltage to an electrostatic chucking electrode to develop a Johnson-Rahbek force or a Coulomb force to attract the wafer to a mounting surface.

  Further, in order to heat the wafer to a uniform temperature as a wafer support member, a heater having a function of heating the wafer by disposing an electrode for heating on the inside of the wafer support member or on the surface opposite to the wafer mounting surface, There is an electrostatic chuck in which an electrode for heat generation is built in the electrostatic chuck, has a force to attract the wafer, and can uniformly heat the wafer.

Also, one of the main surfaces of the plate-shaped ceramic member and a suction surface for supporting the wafer, a metal on the surface opposite to the wafer chucking surface of the plate-shaped ceramic member - ceramic planar body joined consisting double coupling member Te, the metal - ceramic cooled click the double engagement member by the refrigerant or the like, to be discharged out of the rapidly wafer support member heat generated in the wafer have been required when processed under plasma.

Metal - Examples of the electrostatic chuck joined to a surface opposite to the wafer mounting surface of the ceramic multi engagement member plate-like ceramic member, as shown in cross section in FIG. 5, the electrostatic attraction electrode 52 a plate-shaped ceramic sintered body member 51 which is embedded a composite plate 55 of ceramics and aluminum (metal - ceramic multi engagement member) and the electrostatic chuck stage 50 joined with the bonding layer 54 has been disclosed (See Patent Document 1).
Japanese Patent Laid-Open No. 10-32239

However, conventional ceramic member and metal technology - The bonded body of the ceramic multi engagement member, when forming a film or etching the wafer by the plasma, the exposed portion of the periphery of the bonding layer 54 shown in FIG. 5 is a plasma exposed, the ceramic member and the metal - bonding layer 54 of the ceramic multi engagement member is eroded, the worst case, the ceramic member and the metal - the junction of the ceramic multi engagement member such detached from the bonding layer 54 There was a risk of damage.

As shown in cross section in FIG. 6, the ceramic member 61 and the metal - the joint body 60 of the ceramic multi engagement member 65, the maximum shear stress producing site G is generated in the center portion of the brazing material layer 63. When this maximum shear stress generation site is eroded by plasma, an erosion scratch is generated as shown in part G of FIG. 6, and the erosion scratch becomes a very sharp scratch. There is a possibility that the force acts so as to tear a certain brazing material layer 63 and the joined body 60 is peeled off from the joining layer (the brazing material layer 63). In other words, the maximum shear stress generation site G generated at the center of the brazing material layer 63 shown in FIG. 6 is exposed to the plasma and is eroded, thereby generating a synergistic effect due to the sharp erosion damage caused by the plasma and the maximum shear stress. Due to the significant damage, the bonded body 60 may be damaged from the bonding layer (the brazing material layer 63).

  Further, since the brazing material layer of the joined body is exposed to the plasma, the brazing material layer is eroded, so that the wafer supporting member made of the joined body is used to perform the film forming process using the plasma on the wafer or the plasma. When the etching process using is performed, there is a possibility that the yield of the semiconductor wafer due to the adhesion of the particles is reduced due to the generation of particles due to the scattering of the brazing material layer.

The present inventors, in order to solve such a problem, contrary to the usual ceramic member and a metal - ceramic for the end face of the bonding layer to become brazing material layer of the bonded structure of the double engagement member, in the thickness direction center The present invention has been completed by obtaining the knowledge that the corrosion resistance to plasma can be improved by forming a recess of a predetermined size in the part.

The object of the present invention is also a ceramic member and a metal excellent in durability in a corrosive atmosphere - is to provide a joint body and a wafer support member using this with ceramic multi engagement member.

The present inventor has been made in view of the above circumstances, intensive research and development results, the bonding layer bonding layer be exposed to plasma and hard ceramic member eroded metal - devised a joined body of the ceramic multi engagement member. That is, the ceramic member and the metal of the present invention - the joined body of the ceramic multi engagement member, the ceramic member and the metal - via a brazing material layer in ceramic, respectively and a double coupling member on the main surface facing each other form the metal layers The outer peripheral end surface of the brazing material layer between the metal layers is located on the inner side of the outer peripheral edge of the metal layer, and is at least 3 minutes of the thickness of the brazing material layer at the central portion in the thickness direction. The first region is recessed inward.

Further, the ceramic member and the metal of the present invention - the joined body of the ceramic multi engagement member having the above structure, characterized in that the cross-sectional shape in the thickness direction of the area is recessed inwardly of the brazing material layer is curved And

Further, the ceramic member and the metal of the present invention - the joined body of the ceramic multi engagement member having the above structure, the depth of the region are recessed to the inside of the brazing material layer of the thickness of the brazing material layer 0.1 It is characterized by being 10 to 10 times.

Further, the ceramic member and the metal of the present invention - ceramic joined body of the double coupling member having the above structure, the end surface of the brazing material layer, characterized in that the recessed curved in the thickness direction inside.

Further, the ceramic member and the metal of the present invention - the joined body of the ceramic multi engagement member having the above structure, 0.1 times to the thickness of the depth is recessed inwardly of the brazing material layer is the brazing material layer It is characterized by 10 times.

Further, the ceramic member and the metal of the present invention - the joined body of the ceramic multi engagement member having the above structure, the end surface of the brazing material layer is 0.1 from the outer peripheral edge of the metal layer of a thickness of the brazing material layer It is characterized in that it is located on the inner side in the range of double to 0.18 times the maximum diameter of the metal layer.

Further, the ceramic member and the metal of the present invention - the joined body of the ceramic multi engagement member, each of the above structures, the brazing material layer is characterized by comprising an aluminum brazing material or indium brazing material.

Further, the ceramic member and the metal of the present invention - the joined body of the ceramic multi engagement member, each of the above structures, wherein the thickness of the brazing material layer is 100ppm~3000ppm the largest diameter of the joint surface.

Further, the ceramic member and the metal of the present invention - ceramic joined body of the double coupling member having the above structure, wherein the porosity of the brazing material layer is 1% to 10%.

Further, the wafer support member of the present invention, a ceramic member and a metal of any of the present invention of the above construction - comprising a conjugate of the ceramic multi engagement member, the ceramic member, said metal a plate - wherein the other main surface opposed to the main surface of the ceramic multi engagement member side is mounting surface wafer.

  Moreover, the wafer support member of the present invention is characterized in that, in the above configuration, the ceramic member incorporates a heater.

  Moreover, the wafer support member of the present invention is characterized in that, in the above configuration, the ceramic member incorporates an electrostatic chucking electrode.

  Further, the wafer processing method according to the present invention includes a step of placing a wafer on the other main surface of the wafer support member according to the present invention, heating the wafer with the heater, and then using plasma on the wafer. A film treatment or an etching treatment using plasma is performed.

  Further, the wafer processing method according to the present invention includes placing the wafer on the other main surface of the wafer support member according to the present invention and applying a voltage to the electrostatic adsorption electrode to attract the wafer while A film forming process using plasma or an etching process using plasma is performed.

  In addition, the wafer processing method according to the present invention includes placing a wafer on the other main surface of the wafer support member according to the present invention, applying a voltage to the electrostatic chucking electrode to suck the wafer, and using the heater. After the wafer is heated, a film forming process using plasma or an etching process using plasma is performed on the wafer.

Ceramic member and the metal of the present invention - according to the joining body of the ceramic multi engagement member, be used in the plasma under the semiconductor manufacturing device, a ceramic member and a metal - ceramic multi coupling member and the main opposite each other An end face of the brazing material layer between the metal layers bonded to each other via a brazing material layer is a region at least one third of the thickness of the brazing material layer at the center in the thickness direction. since There is recessed inwardly, since hardly plasma is exposed to the brazing material layer hardly brazing material layer is eroded, the ceramic member and the metal - that the ceramic multi engagement member is peeled off from the brazing material layer is bonded layer hardly damaged ceramic member and metallic - can provide conjugates of ceramic multi engagement member.

Further, when the bonded body of the present invention is used as a wafer support member such as a heater for heating a wafer, an electrostatic chuck for electrically attracting and fixing a wafer, or an electrostatic chuck with a heater, the main component of a plate-like ceramic member is used. metal of the surfaces - the ceramic multi coupling member and the other main surface opposite to the mounting surface for mounting the wafer support, a ceramic member and a metal - ceramic, respectively and a double coupling member on the main surface facing each other The brazing material layer is joined between the formed metal layers, and the end surface of the brazing material layer between the metal layers has a region at least one third of the thickness of the brazing material layer at the center in the thickness direction. recessed by being in hardly brazing material layer upon forming a film or etching the wafer is exposed to plasma by the plasma, the brazing material layer is hardly eroded, the ceramic member and the metal - ceramic Can provide hard wafer support member damage that the double coupling member is peeled off from the brazing material layer is bonded layers.

  In addition, since the wafer support member according to the present invention is configured using the joined body according to the present invention in which the brazing material layer is less susceptible to erosion by plasma, durability can be enhanced.

  Furthermore, since the wafer processing method according to the present invention uses the wafer support member according to the present invention in which the brazing material layer is not easily exposed to plasma and the brazing material layer is hardly eroded, plasma is used for the wafer. Even when a film formation process or an etching process using plasma is performed, generation of particles due to scattering of the brazing material layer can be prevented, and a decrease in yield due to adhesion of particles to the wafer can be prevented.

Figure 1 is a ceramic member 12 and the metal of the present invention - a schematic configuration of a ceramic multi multiplexer ceramic made of the electrostatic chuck is one example of an embodiment of the wafer support member 100 using a joint body 1 and the member 16 It is sectional drawing shown. Electrostatic metal layer 13 is formed on one main surface of the attraction electrode 11 plate-shaped ceramic member 12 incorporating a further metal - metal layer 15 is formed on one main surface of the ceramic multi engagement member 16, Metal layers 13 and 15 are joined by a brazing material layer 14. Reference numeral 1 denotes a joined body. In order to apply a voltage to the electrode 11 for electrostatic adsorption, a hole is formed through the metal-ceramic composite member 16 and leading to the electrode 11 for electrostatic adsorption incorporated in the ceramic member 12. Is joined to the electrode 11 for electrostatic attraction. Thereby, the wafer support member 100 is configured.

  When a DC voltage is applied to the electrostatic adsorption electrode 11, a semiconductor wafer (not shown) placed on the upper surface of the ceramic member 12 can be firmly adsorbed.

Ceramic member 12 and the metal of the present invention - ceramic in the joining member 1 of the double case member 16, the ceramic member 12 and the metal - ceramic multi engagement member 16 and the metal was formed, respectively on opposite major surfaces to each other layer 13, 15 is joined via the brazing material layer 14, and the end surface of the brazing material layer 14 between the metal layers 13, 15 is at least one third of the thickness of the brazing material layer 14 at the center in the thickness direction. Is recessed inward.

Of A) to F 2) are each a ceramic member 12 of the present invention the metal - an enlarged ceramic end near face showing the recess of the outer periphery of the brazing material layer 14 in FIG. 1 of the bonded structure 1 with double coupling member 16 It is sectional drawing. As shown in A), B), and C) of FIG. 2, the end surface of the brazing material layer 14 has an indented region at least one third of the thickness of the brazing material layer 14 at the center in the thickness direction. As a result, even if the plasma tries to erode the brazing material layer 14 which is a bonding layer, the plasma does not sufficiently wrap around the recessed portion, and the plasma density is lowered and the bonding layer (the brazing material layer 14) is eroded. This makes it difficult to protect the central portion of the brazing material layer 14 where the maximum shear stress is generated from the plasma, so that the durability of the joined body 1 can be increased and the reliability can be increased.

  Moreover, it is preferable that the cross-sectional shape of the thickness direction is curving in the area | region recessed inside this brazing material layer 14. FIG. That the cross-sectional shape in the thickness direction is curved is, for example, a shape as shown in FIG. This is because if the cross-sectional shape is curved, erosion of the brazing material layer 14 by plasma can be more effectively prevented. The reason is that not only the plasma density of the dent portion is lowered due to the curved cross-sectional shape, but also the dent itself is curved and has no corners, so that the dent itself forms the bonding layer (the brazing material layer 14). This is because it is difficult to become a starting point of fracture against the shearing stress to be peeled off.

  Moreover, it is preferable that the depth d of the indented region is 0.1 to 10 times the thickness a of the brazing material layer 14. This is because if the depth d of the dent is 0.1 times or more the thickness a of the brazing material layer 14, the plasma density in the indented region is reduced and erosion of the brazing material layer 14 due to plasma can be reduced. . This is because, when the plasma density is high, the erosion rate increases, but the erosion rate decreases because the plasma density in the inside of the dent is lowered due to the depression of the bonding layer (the brazing material layer 14).

  If the depth of the dent is less than 0.1 times the thickness a of the brazing material layer 14, the depth d of the dent is too shallow and the plasma can enter the inside of the dent relatively easily, so that the plasma density does not decrease. This is because the erosion rate may be difficult to decrease. As a more preferable range, it is desirable to be recessed at least 1 times the thickness a of the brazing material layer 14. This is because erosion due to plasma in the recess can be further reduced.

  The reason why the depth d of the dent is desirably 10 times or less the thickness a of the brazing material layer 14 is that the shape of the dent is formed when the depth d of the dent exceeds 10 times the thickness a of the brazing material layer 14. This is because the radius of curvature of the tip of the recess becomes too small as in the shape shown in FIG. 2C), and the tip of the recess may act as a starting point for destruction. On the other hand, the concave shape of A) in FIG.

  Moreover, it is preferable that the end surface of the brazing material layer 14 is curved and recessed inward in the thickness direction. As shown in D), E), and F) of FIG. 2, the plasma density can be reduced over almost the entire end face of the brazing material layer 14 by being recessed over the entire brazing material layer 14. This is because it is possible to further reduce plasma erosion to the brazing material layer 14. As the shape of the dent, there are, for example, three types shown in D), E), and F) of FIG. 2, and a preferable shape among them is an elliptical shape shown in D). This is because not only the plasma density of the dent portion is lowered, but also the shape of the dent itself is a part of an ellipse, so there is no corner and it is difficult to become a starting point of destruction due to stress concentration.

  In addition, the ab ratio formed of a part of the elliptical shape shown in FIG. 2D) is also important. The ab ratio (= b / a) is desirably 0.1 times or more. This is because if the ab ratio is 0.1 times or more, the depth b of the dent that is 1/10 or more of the thickness of the brazing material layer 14 can be obtained. When the plasma erodes the bonding layer (the brazing material layer 14), if the plasma density is high, the erosion rate increases. However, since the bonding layer (the brazing material layer 14) is recessed, the plasma inside the dents is increased. This is because the density decreases and the erosion rate decreases. If the depth b of the dent is less than 0.1 times the thickness of the brazing material layer 14, the dent is too shallow and the plasma can enter the inside of the dent relatively easily. It is because it is hard to fall.

  Further, it is preferable that the depth b recessed inside the end face of the brazing material layer 14 is 0.1 to 10 times the thickness a of the brazing material layer 14. The reason why the thickness of the brazing material layer 14 is preferably 0.1 times or more is that when the plasma erodes the bonding layer (the brazing material layer 14), the erosion rate increases when the plasma density is high. This is because the depression of the material layer 14) reduces the plasma density inside the depression and reduces the erosion rate. If the depth of the dent is less than 0.1 times the thickness of the brazing material layer 14, the dent is too shallow and plasma can enter the inside of the dent relatively easily. This is because it is difficult to decrease. Further, the reason why the thickness of the brazing material layer 14 is preferably 10 times or less is that when the shape of the recess is the shape of E) in FIG. 2, the radius of curvature of the tip becomes too small (the angle becomes too sharp), This is because the tip of the dent may function as a starting point for destruction.

  Moreover, it is preferable that the end surface of the brazing material layer 14 between the metal layers 13 and 15 is located inside the outer peripheral edges of the metal layers 13 and 15.

This is because by locating the end face of the brazing material layer 14 on the inner side of the outer peripheral edge where the metal layers 13 and 15 are present, erosion of the brazing material layer 14 by plasma can be extremely reduced. For indentation, whereas it is possible to prevent surely eroded by plasma in the vicinity of the center of occurrence of maximum shearing stress, the ceramic member 12 and metal - near the ceramic multi coupling member 16, as the shear stress Although it is small, since it is close to plasma, erosion of the bonding layer (the brazing material layer 14) due to plasma may occur. However, if the end face of the brazing material layer 14 is located on the inner side of the outer peripheral edge of the metal layer 13 or 15, it is difficult for the plasma to wrap around. Erosion of the brazing material layer 14 due to is hardly generated. In order to position the end face of the brazing material layer 14 on the inner side of the outer peripheral edge of the metal layer 13 or 15, the relationship between the dimensions of the brazing material before brazing and the brazing material flow position after brazing is grasped in advance. The size and amount of the brazing material may be adjusted so that the end face of the brazing material layer 14 is in a desired position after brazing.

  Further, the end face of the brazing material layer 14 is 0.1 times the thickness of the brazing material layer 14 from the outer peripheral edge of any of the metal layers 13 and 15 to 0.18 times the maximum diameter of the metal layers 13 and 15 from the outer peripheral edge. It is preferable that it is located inside in the range. The positional relationship between the outermost peripheral part of the end surface of the brazing material layer 14 and the outermost peripheral edge of any one of the metal layers 13 and 15 is preferably 0.1 times or more the thickness of the brazing material layer 14 because the plasma is a bonding layer. When the (brazing material layer 14) is eroded, if the plasma density is high, the erosion rate is increased, but the brazing material layer 14 is located on the inner side of the outer peripheral edge of one of the metal layers 13 and 15. This is because the plasma density in the inside becomes substantially zero, and the plasma can hardly erode the brazing material layer 14. If the position of the brazing material layer 14 is less than 0.1 times the thickness of the brazing material layer 14, it is too small and plasma can penetrate into the inside relatively easily. The erosion of the brazing material layer 14) cannot be eliminated. Therefore, the end surface of the brazing material layer 14 is 0.1 times or more the thickness of the brazing material layer 14 than the outer peripheral edge of the metal layers 13, 15, more preferably, the plasma to the brazing material layer 14 by the metal layers 13, 15. It is desirable that it is located at least 1 time inside because of its large intrusion prevention effect.

  In addition, if the metal layers 13 and 15 are thin disk shape, the maximum diameter of the metal layers 13 and 15 can be shown by the diameter. In the case of a quadrangle, the maximum diameter can be indicated by the size of a diagonal line. If the metal layers 13 and 15 are deformed into an ellipse or the like, the major axis of the ellipse becomes the maximum diameter. In any case, the maximum straight line length that can be drawn in parallel in the plate-like metal layers 13 and 15 can be shown as the maximum diameter.

Further, the end face of the brazing material layer 14 is preferably up to 0.18 times the maximum diameter of the metal layers 13 and 15. In the example of the embodiment of the present invention shown in FIG. 1, even if the metal layers 13 and 15 cover the entire other main surface of the ceramic member 12, the end surface of the brazing material layer 14 is the outer peripheral edge of the metal layers 13 and 15. from the position of 0.18 times the ultra forte inside the largest diameter, since the brazing material layer 14 too becomes smaller junction area is disposed inside, when made to function as a wafer support member, occurs in the wafer and transferring the heat metal - preferably functions as a wafer support member that waste heat from the ceramic multi engagement member 16 there is a possibility that insufficient. Insufficient heat discharge causes a large temperature difference in the wafer surface, making it difficult to form a film with a uniform thickness on the wafer and, for example, reducing the yield of semiconductor chips manufactured from the wafer. It is because there is a possibility of. Therefore, the end surface of the brazing material layer 14 is preferably located at a position from the outer peripheral edge of the metal layers 13 and 15 to 0.18 times the maximum diameter, more preferably to a position up to 0.12 times.

The brazing material layer 14 is preferably made of an aluminum brazing material or an indium brazing material. The reason is that the aluminum brazing material also indium brazing material be soft and in the brazing material, the deformation and is easy to braze the ceramic member 12 and the metal of the present invention in FIG. 3 - joining of the ceramic multi coupling member 16 As shown in the enlarged sectional view of the outer periphery of the brazing material layer 14 in the body 1, even if the maximum shear stress of the brazing material layer 14 is generated in the central portion 34 of the brazing material layer 14, the brazing material layer 14 itself is deformed. This is because the ceramic member 12 is not easily cracked. In particular, when a wafer is processed by a semiconductor manufacturing apparatus, the wafer is exposed to a temperature cycle of about −10 ° C. to 150 ° C. Even under such a temperature cycle, the brazing material itself is deformed. There is no generation of cracks. As the brazing material, an Au—Sn brazing material can be used, but since the Au—Sn brazing material is very hard, the brazing material itself is not deformed and partitioned against stress, so that the temperature cycle of −10 ° C. to 150 ° C. Below, there exists a possibility that a crack may generate | occur | produce in the ceramic member 12. FIG.

  Moreover, it is preferable that the thickness of the brazing material layer 14 is 100 ppm to 3000 ppm which is the maximum diameter of the joint surface. When used as a wafer support member 100 for a semiconductor manufacturing apparatus, since it is exposed to a temperature cycle of about −10 ° C. to 150 ° C., the brazing material layer 14 is thinner than the maximum diameter of 100 ppm of the joint surface. This is because the brazing material cannot be deformed in response to the stress generated in the temperature cycle, so that the ceramic member 12 is cracked. Further, in order to allow the brazing material layer 14 to be deformed in response to the stress generated in the temperature cycle, it is preferably 500 ppm or more. Further, if the thickness of the brazing material layer 14 is greater than 3000 ppm, the brazing material layer 14 becomes too thick, and the central portion in the thickness direction of the end face of the brazing material layer 14 is at least one third of the thickness of the brazing material layer 14. Since the plasma can easily erode the brazing material layer 14 even if it is recessed, the brazing material layer 14 is eroded by the plasma. In the worst case, the brazing material is broken or the ceramic member 12 is peeled off from the brazing material layer 14. This is because. Therefore, the thickness of the brazing material layer 14 is preferably 3000 ppm or less of the maximum diameter of the joining surface, and more preferably, the plasma hardly enters the end surface of the brazing material layer 14 corresponding to the maximum diameter of the joining surface. It is preferably 2000 ppm or less.

  Moreover, it is preferable that the porosity of the brazing material layer 14 is 1% to 10%. This is because the brazing material layer 14 has pores, so that the brazing material layer 14 is easily deformed and cracks are hardly generated in the ceramic member 12 even when exposed to a temperature cycle. The porosity of the brazing material layer 14 is a state in which fine pores having a diameter of about 10 μm or less are uniformly dispersed in the brazing material, but this porosity is actually cut out from the product by taking out the brazing material layer 14, What is necessary is just to calculate a porosity by the Archimedes method. If the porosity of the brazing material layer 14 is less than 1%, the brazing material will inevitably become hard. Therefore, when exposed to a temperature cycle, the brazing material layer 14 cannot be completely deformed and cracks are generated in the ceramic member 12. There is a case. Therefore, the porosity of the brazing material layer 14 is preferably 1% or more. Further, in order to make the brazing material layer 14 easily deformed under stress, the porosity of the brazing material is preferably 2% or more. preferable. Further, when the porosity of the brazing material layer 14 exceeds 10%, He passes through the brazing material layer 14 through the pores, so that it cannot be used as the wafer support member 100 for a semiconductor manufacturing apparatus. There is. Furthermore, the porosity of the brazing material layer 14 is preferably 8% or less so that He does not pass through the brazing material layer 14 even if there is some variation in the distribution of pores.

Further, the wafer support member 100 of the present invention, the ceramic member 12 is a metal - ceramic provided with a click joint body 1 and the double engagement member 16, the ceramic member 12 is a plate-like metal - ceramic composite member 16 side The wafer supporting member 100 is characterized in that the other (opposite) main surface facing the main surface is the wafer mounting surface 12a. The bonded body 1 of the present invention is used for the wafer supporting member 100 and PVD. This is because it is preferably used for a process of placing a wafer after the process is completed and waiting for the next process.

Further, in the wafer support member 100, the ceramic member 12 preferably includes a heater (not shown) therein. By incorporating a heater in the ceramic member 12 of the wafer support member 100 of the present invention, the wafer can be used for heating a wafer. Such a wafer support member 100 can be applied to a process called an etching process or a CVD process as a semiconductor manufacturing apparatus. In these steps, or deposited on the wafer by plasma, the formed film because it is a process that or etched into a desired shape, the ceramic member 12 having a built-in heater metal - ceramic multi coupling member In the structure in which the brazing material layer 14 is joined to the brazing material 16, the brazing material layer 14 is not directly exposed to the plasma, so that the effects of the present invention can be exhibited.

Further, in the wafer support member 100, the ceramic member 12 preferably includes the electrostatic chucking electrode 11 therein. When the wafer support member 100 according to the present invention is used for the PVD process in the manufacture of semiconductors, the ceramic adsorbing electrode 11 is built in the ceramic member 12 and the electrostatic adsorbing electrode 11 is provided in the ceramic member 12. In some cases, a heater (not shown) is incorporated. In the PVD process, a wafer is adsorbed on the ceramic member 12, plasma generated in the semiconductor manufacturing apparatus is applied to the target, and a film forming material from the target is formed on the wafer adsorbed on the wafer support member 100. It is a process. Therefore the plasma in process is always used, the ceramic member 12 and the metal of the present invention - the effect of improvement of the durability by the configuration of the joint body 1 of the ceramic multi engagement member 16 is extremely large preferred.

  In the electrostatic chuck according to the embodiment of the present invention, when a voltage is applied to the electrostatic chucking electrode 11 and the wafer is sucked onto the mounting surface 12a, the wafer can be brought into close contact with the mounting surface 12a. Heat can be efficiently transferred to the surface 12a. Moreover, since the heat of the mounting surface 12a can be quickly transmitted to the wafer, the wafer can be heated to a desired temperature. Furthermore, if the wafer is attracted by the electrostatic attracting electrode 11, the heat on the mounting surface can be easily transmitted to the wafer, and therefore the temperature difference in the surface of the wafer can be reduced. In addition, when performing a film forming process using plasma of a semiconductor thin film or an etching process using plasma, the wafer and the wafer support member may be exposed to the plasma, and the bonding layer may be etched and adhere to the wafer. There was a risk that the wiring on the wafer could not be achieved as designed or could be disconnected. However, in the wafer support member of the present invention, since the bonding layer is difficult to be etched due to the depression of the bonding layer, the corroded bonding layer can be prevented from adhering to the wafer as particles. Therefore, the wiring of the element on the wafer can be formed without disconnection or short circuit, and the wiring as designed can be formed on the wafer.

  As described above, when film formation or etching processing in a plasma atmosphere is performed using the wafer support member 100 of the present invention, corrosion of the bonding layer can be effectively prevented, so that excellent wafer processing with very little generation of particles is achieved. Thus, a wafer processing method with a high yield can be provided.

Further, since the wafer can be heated to a desired temperature by further providing a heater for heating the wafer on the wafer support member 100 provided with the electrostatic chucking electrode 11, the wafer is subjected to film formation by plasma CVD at a high temperature. or can or a high etching efficiency at a high temperature.

  When the film forming process or the etching process is performed using the wafer support member 100 of the present invention, the generation of particles of 30 nm or more can be effectively prevented, so that the following corresponds to a half pitch of 60 nm or less of the metal wiring of DRAM, MPU, and ASIC. It is possible to provide a wafer support member for a production process of a generation semiconductor device.

Next, the ceramic member 12 of the present invention the metal - describes an example of another configuration of the joint body 1 of the ceramic multi coupling member 16.

Ceramics such as aluminum nitride, aluminum oxide, and silicon nitride are suitable as the ceramic member 12, but when an electrostatic chuck as shown in FIG. 1 is used as the wafer support member 100 for a semiconductor manufacturing apparatus, Johnson-Rabeck While selecting the ceramic materials in the adsorption mechanism of the wafer to be divided into a force or a Coulomb force, Johnson - when desired Rahbek force, the ceramic member 12, from the viewpoint of aluminum nitride of the volume resistivity preferable.

Metal - as ceramic multi coupling member 16, aluminum composite material obtained by mixing the Si in the composite material and is AlSiC or AlSiC of silicon carbide, if such a composite material obtained by mixing an _Si 3 _{N 4} to AlSiC, 100W / ( m · K) or more high thermal conductivity is easily obtained, further the ceramic member 12 is aluminum nitride, aluminum oxide, with respect to the case of silicon nitride, a metal - ceramic ± the difference in thermal expansion coefficient between the multi coupling member 16 20 It is suitable because it is easy to adjust within%. Metal used in the present invention - the ceramic multi engagement member 16 when used as a wafer support member 100, discharge the heat generated when the wafer is treated with a plasma outside the plasma processing region through the wafer support member 100 since it is necessary to, metal - ceramic multi coupling member 16 is required to be high thermal conductivity. Desirably, a high thermal conductivity of 100 W / (m · K) or more is preferable.

Furthermore, the ceramic member 12 and the metal - to reduce the warp occurring when bonding the ceramic multi engagement member 16 in the brazing material layer 14, a metal - ceramic thermal expansion coefficient and the ceramic member 12 of the double coupling member 16 It is important to match the thermal expansion coefficient of the material as much as possible. When using aluminum nitride as the ceramic member 12, AlSiC as described above, the composite material obtained by mixing the Si to AlSiC, composites mixed with _Si 3 _{N 4} in AlSiC has a high thermal conductivity, thermal expansion coefficient This is suitable because it is easy to adjust with respect to aluminum nitride.

Also, other than AlSiC, a composite material in which AlSiC is mixed with Si, and a composite material in which AlSiC is mixed with Si ₃ N ₄ , the thermal conductivity is 100 W / (m · K) or more, and the thermal expansion of aluminum nitride. the thermal expansion coefficient within 20% ± the coefficient, more preferably metal was adjusted within 10% ± - if ceramic multi engagement member 16, a metal of any composition - can be used even ceramics composite member 16 .

Forming a metal layer 13, 15 on each main surface of ceramic multi engagement member 16 - Additional ceramic member 12 and metal. The metal layers 13 and 15 are desirably formed of one type or two or more types selected from Ni, Au, Ag, and Cu. This is to improve the wettability with the brazing material layer 14. More preferably, it may be formed of one or two types selected from Ni and Au. This is because the wettability with the aluminum brazing material or the indium brazing material is good. The formation of the metal layers 13 and 15 is preferably performed by a plating method, a sputtering method, or the like because the thickness can be easily managed.

The metal layers 13 and 15 thus formed are joined together via the brazing material layer 14. The brazing material layer 14 is joined using an aluminum brazing material or an indium brazing material. Ceramic member 12 and the metal - when joining the ceramic multi engagement member 16 in the brazing material layer 14, the ceramic member 12 and the metal - ceramic multi engagement member 16 but is equally as thermal expansion coefficient, the brazing material layer 14 itself is a metal, ceramic member 12 and metal - a configuration that has a large coefficient of thermal expansion than ceramic multi coupling member 16.

After bonding by raising the temperature to the melting temperature of the brazing material layer 14 in this configuration, when returned to room temperature, the thermal shrinkage of the brazing material layer 14 is a ceramic member 12 and metal - greater than the thermal contraction of the ceramic multi coupling member 16 Therefore, as shown in FIG. 3, the maximum shear stress is generated in the central portion 34 of the brazing material layer 14. However, as shown in A), B), C), D), E), and F) of FIG. 2, there is at least one third of the thickness of the brazing material layer 14 at the center of the end face of the brazing material layer 14. If it is indented inside, the plasma density in the indented portion is reduced, so that the central portion of the brazing material layer 14 where the maximum shear stress is generated in the brazing material layer 14 can be prevented from being eroded by the plasma. The maximum shear stress is generated in the central portion 34 of the brazing material layer 14, and it is considered that only the very central portion of the brazing material layer 14 is recessed so that the same effect can be obtained. The same effect could not be obtained unless one third or more of the thickness of the brazing material layer 14 was recessed. This is because the maximum shear stress is surely generated in the central portion, but the vicinity thereof is extremely large as the stress. Therefore, if the dent is smaller than one third of the thickness of the brazing material layer 14, it conforms to the maximum shear stress by the plasma. The portion where the stress is generated is eroded, and in the worst case, the bonding layer (the brazing material layer 14) is broken or peeled off.

Next, the ceramic member 12 and the metal of the present invention - as a manufacturing method of the bonded body 1 of the ceramic multi engagement member 16, illustrating the wafer support member 100 as an example.

  As the ceramic member 12 constituting the wafer support member 100, an aluminum nitride sintered body can be used. In addition, a silicon nitride sintered body and aluminum oxide may be used. In the production of the aluminum nitride sintered body, about 15 mass% or less cerium oxide in terms of mass is added to the aluminum nitride powder, and the resulting nitride is mixed for 24 to 48 hours using a ball mill using IPA and urethane balls. After passing the aluminum slurry through 200-500 mesh and removing the waste of urethane balls and ball mill walls, it is dried for about 24 to 36 hours at a temperature of about 120 to 150 ° C. with an explosion-proof dryer to remove IPA. A homogeneous aluminum nitride mixed powder is obtained. Then, an acrylic binder and solvent are mixed with the mixed powder to produce an aluminum nitride-based slip, and tape molding is performed by a doctor blade method. A plurality of the obtained aluminum nitride tapes are laminated. The resulting compact is formed with a conductive powder such as tungsten as an electrostatic chucking electrode or heater by screen printing, coated with a desired adhesive liquid on a plain tape, and stacked with multiple tapes and pressed. Molded to obtain a molded body.

  The above is the method by tape molding, but there is also a method in which an acrylic binder, paraffin wax or the like is mixed with the obtained aluminum nitride mixed powder and molded by the CIP method or the die press method.

  The obtained molded body was degreased for 2 to 10 hours at 300 to 700 ° C. in a non-oxidizing gas stream, and further 1800 ° C. under a pressure of 0.2 MPa or more and 200 MPa or less in a non-oxidizing atmosphere. Sintering is carried out at a temperature of ˜2000 ° C. for 0.5 hours to 10 hours. In this way, an aluminum nitride sintered body with a heating element embedded therein is obtained.

The aluminum nitride sintered body thus obtained is machined to obtain a ceramic member 12 so that a desired shape is obtained. Further, a terminal 17 for applying a voltage to the electrostatic attraction electrode 11 is bonded using a method such as a metallization method. The resulting joint surface and the metal was prepared in advance of the ceramic member 12 - the bonding surface of the ceramic multi coupling member 16 to form the metal layers 13 and 15. Ni or the like is formed as metal layers 13 and 15 by 0.5 to 6 μm by sputtering or plating.

Thereafter, an aluminum brazing material is sandwiched between the metal layers 13 and 15 and evacuation is performed, the degree of vacuum is maintained at about 1 × 10 ⁻⁷ to 1 × 10 ⁻⁴ Pa, and a temperature of 550 to 600 ° C. is 5 to 300 ° C. Braze for a minute. Before joining at 550 to 600 ° C., replacement with a non-oxidizing gas such as argon or nitrogen, or flowing these gases while maintaining a vacuum at about 0.1 to 13 Pa, the aluminum brazing material The flowability is improved, which is preferable. Thereafter, the end surface of the brazing material layer 14 is recessed.

As for the concave shape, there is a concave shape as shown in A), B), C), D), E), F) of FIG. 2, but A), B), C), E), The method of recessing as in F) is made by tracing the brazing material layer 14 manually using a jig capable of forming the shapes of A), B), C), E) and F). On the other hand, in the case of the shape of D) in FIG. 2, the brazing material layer 14 having good paintability with the metal layers 13 and 15 is used, the bonding temperature at the time of bonding is set to 550 to 600 ° C., and the atmospheric pressure at the time of bonding. Can be formed by adjusting the pressure to 0.1 to 13 Pa after substituting ^10-4 Pa or less with a non-oxidizing atmosphere. Thus, the wafer support member 100 of the present invention shown in FIG. 1 can be obtained.

  As a ceramic member constituting the wafer support member, an aluminum nitride sintered body was used. Add about 15% by mass or less of cerium oxide to aluminum nitride powder, mix with IPA and urethane ball for 36 hours by ball mill, pass the resulting aluminum nitride slurry through 200 mesh, urethane ball or ball mill After removing the wall debris, it was dried at a temperature of 120 ° C. for 24 hours with an explosion-proof dryer to remove the IPA, thereby obtaining a homogeneous aluminum nitride mixed powder.

  The mixed powder was mixed with an acrylic binder and solvent to produce an aluminum nitride slip, and tape molding was performed by the doctor blade method. A plurality of the obtained aluminum nitride tapes were laminated. The resulting compact is formed with a conductive powder such as tungsten as an electrostatic chucking electrode or heater by screen printing, coated with a desired adhesive liquid on a plain tape, and stacked with multiple tapes and pressed. Molded to obtain a molded body having a diameter of 450 mm and a thickness of about 20 mm. The obtained molded body was degreased at 500 ° C. for 5 hours in a non-oxidizing gas stream, and further baked by holding at a temperature of about 1900 ° C. for 5 hours under a pressure of 10 MPa or less in a non-oxidizing atmosphere. I concluded. In this way, an aluminum nitride sintered body in which an electrode for electrostatic adsorption and a heater were embedded was obtained.

The aluminum nitride sintered body thus obtained was machined so as to obtain a disk shape having a diameter of 320 mm and a thickness of about 10 mm. Furthermore, the terminal for applying a voltage to the electrode for electrostatic attraction was joined by the metallizing method. Obtained metal had been prepared in advance and the bonding faces of the ceramic member - on the bonding surface of the ceramic multi coupling member with Ni by plating to form the metal layer.

  Thereafter, an aluminum brazing material of JIS 4N04 was sandwiched between the metal layers, and while evacuating, argon was flowed to maintain the degree of vacuum at 1.3 Pa, and brazing was performed at a temperature of about 580 ° C. for about 120 minutes. Thereafter, in order to dent the end surface of the brazing material layer, the end surface of the brazing material layer was traced with a stainless steel jig prepared in advance to form a desired dent on the end surface of the brazing material layer. In this way, a wafer support member was obtained.

Using the convex jig that can dent the end surface of the brazing material layer of the wafer support member obtained by the above method, trace the end surface of the brazing material layer manually, and further change the width of the dent. A support member was produced. The thickness of the brazing material layer before brazing the ceramic member and the metal - ceramic multi coupling member 5 points thickness near the center of, measured by total 10 points 5 points around the periphery, the thickness of the same point after brazing It was measured, before brazing the ceramic member and the metal from the average of brazing thickness after - by subtracting the average thickness of the ceramic click double coupling member, and the thickness of the brazing material layer.

Thereafter, the obtained wafer support member was exposed to argon plasma in vacuum for 100 hours, and the bonding state of the brazing material layer before and after exposure to argon plasma was observed. The joining state of the brazing material layer was evaluated using an ultrasonic flaw detection method. Argon plasma treatment is the value obtained by dividing the area of the part where the brazing material layer is broken or peeled off by the ultrasonic flaw detection method by the joining area with the tip of the dent of the brazing material layer as the outermost periphery. It was evaluated as the subsequent peeling of the joint. If there is no peeling, it is 0%, and if the whole surface is peeled, it is 100%. Table 1 shows the results.

  According to the results shown in Table 1, the end face of the brazing material layer between the metal layers, which is the width of the dent within the preferred range of the present invention, is at least one third of the thickness of the brazing material layer at the center in the thickness direction. Sample No. whose area is recessed inward The wafer support members Nos. 11 to 15 were found to be excellent because bonding peeling after argon plasma treatment was less than 5% and very little peeling was observed due to the effect of the dents on the end face of the brazing material layer.

  On the other hand, No. which is a sample outside the scope of the present invention. As for the peeling-off after 16-19 argon plasma processing, 5% or more was confirmed. In particular, sample no. In No. 19, the peeling of the bonding after the argon plasma treatment was 10%, and a destructive bonding layer peeling was observed.

A wafer support member is produced by the same method as in Example 1, and the wafer surface is manually traced using a convex jig that can dent the brazing material layer of the obtained wafer support member. A support member was produced. And it evaluated similarly to Example 1. FIG. Table 2 shows the results.

  According to the results shown in Table 2, the sample No. 1 in which the concave shape of the end face of the brazing material layer is C) in FIG. 21 and 22, the cross-sectional shape of the region recessed inward is a sample No. 2 having the shape of A) in FIG. 23 and 24 were found to reduce the occurrence of bond peeling after argon plasma treatment.

A wafer support member was prepared in the same manner as in Example 1, and the brazing material surface was formed using a jig that recessed one third of the brazing material layer thickness of the obtained wafer support member as shown in FIG. Wafer support members were produced by manually tracing and changing the depth of the recesses. And it evaluated similarly to Example 1. FIG. Table 3 shows the results.

  Sample No. in Table 3 31 to 36 are all samples within the preferred range of the present invention, and the peeling of the joint after the argon plasma treatment was a good value of less than 5%.

  In particular, Sample No. in which the depth of the region where the end face of the brazing material layer is recessed inward is 0.1 to 10 times the thickness of the brazing material layer. Nos. 32 to 35 were more excellent in bonding peeling after argon plasma treatment of 2.9% or less.

  However, the sample No. 1 in which the depth of the region where the end face of the brazing material layer is recessed inward is out of the range of 0.1 to 10 times the thickness of the brazing material layer. Nos. 31 and 36 showed 3.5% and 3.6% bond peeling after the argon plasma treatment, and it was found that the bond peeling after the argon plasma treatment was slightly inferior.

A wafer support member was produced in the same manner as in Example 1, and one-third of the brazing material layer thickness of the obtained wafer support member was recessed into an elliptical shape as shown in FIG. Using a jig, a wafer support member was fabricated by manually tracing the end face of the brazing material layer and changing the ab ratio. And it evaluated similarly to Example 1. FIG. Table 4 shows the results.

  Since Table 4 is an example within the preferred range of the present invention, all of the peel-off after argon plasma treatment was good within 5%, but the end face of the brazing material layer was part of an elliptical shape and the ab ratio was Sample No. as small as 0.1 In No. 41, the sample peel-off after the argon plasma treatment was 2.5%, whereas the ab ratio was 0.2%. In 42, it was found that peeling was greatly improved to 1.9%.

Using a jig for recessing the brazing material layer of the wafer support member obtained in the same manner as in Example 1 as shown in FIG. By tracing and changing the depth of the recess, wafer support members were produced. And it evaluated similarly to Example 1. FIG. Table 5 shows the results.

  Since all of Table 5 are examples within the preferable range of the present invention, all of the peeling-off after the argon plasma treatment was within 5%.

  Further, the depth of the end face of the brazing material layer curved inward in the thickness direction and recessed is 0.1 to 10 times the thickness of the brazing material layer. As for 52-54, it turned out that joining peeling after argon plasma processing becomes 1.9% or less, and is more preferable.

  In order to position the end face of the brazing material layer on the inner side of the outer peripheral edge of the metal layer when the wafer support member is obtained by the same method as in Example 1, the dimensions before brazing of the brazing material and the brazing after brazing are preliminarily determined. Know the relationship with the position of the material flow, and after brazing, the end surface of the brazing material layer is the desired position inside the outer periphery of the metal layer, 0.05 times the thickness of the brazing material layer from the outer periphery A wafer support member was manufactured by adjusting the size of the brazing material so that the outer peripheral edge was 0.25 times the maximum diameter of the metal layer.

  And it evaluated similarly to Example 1. FIG.

Moreover, the metal of the wafer support member - ceramic multi case member side internally flushed with hot water 50 ° C., and then placed on a silicon wafer, by IR cameras, a total of central 5-point and the outer peripheral portion 5 points of the silicon wafer Ten temperatures were measured, and the temperature obtained by subtracting the minimum temperature from the maximum temperature was used as a standard for soaking. Table 6 shows the results.

  Since all of Table 6 are examples within the preferred range of the present invention, the bond peeling after the argon plasma treatment was 5% or less, but the end face of the brazing material layer between the metal layers was inside the outer peripheral edge of the metal layer. Sample No. located in Nos. 61 to 69 were found to be excellent because the peel-off after argon plasma treatment was as small as 1.5% or less.

  Further, the end surface of the brazing material layer is located on the inner side in the range of 0.1 times the thickness of the brazing material layer to 0.18 times the maximum diameter of the metal layer, relative to the outer peripheral edge of the metal layer. Sample No. Nos. 61 to 65 were found to be the most excellent, with the peel-off after argon plasma treatment being 0.5% or less and soaking being 1.9 ° C. or less.

  However, the position of the end face of the brazing material layer between the metal layers located on the inner side of the outer peripheral edge of the metal layer is 0.09, where the distance from the outer peripheral edge of the metal layer is smaller than 0.1 times the brazing material thickness. Sample No. which is double or 0.05 times 66, no. In No. 67, the peel-off after argon plasma treatment was slightly large, 0.9% and 1.5%.

  In addition, Sample Nos. In which the position of the end face of the brazing material layer between the metal layers is 0.2 times and 0.25 times the maximum diameter of the metal layer from the outer periphery of the metal layer. In 68 and 69, the thermal uniformity was greatly deteriorated to 5 ° C and 5.1 ° C.

A wafer support member was produced in the same manner as in Example 1, and the wafer support member was produced by changing the thickness of the aluminum brazing material during the aluminum brazing. The obtained wafer support member was exposed to argon plasma in vacuum for 100 hours, and the bonding state of the brazing material layer before and after exposure to argon plasma was observed. The joining state of the brazing material layer was evaluated using an ultrasonic flaw detection method. Peeling was evaluated using a value obtained by dividing the area of the portion judged to be the peeling of the brazing material layer by the ultrasonic flaw detection method by the joining area with the tip of the dent of the brazing material layer being the outermost periphery. If there is no peeling, it is 0%, and if the whole surface is peeled, it is 100%. Thereafter, a temperature cycle of −10 ° C. to 100 ° C. was performed 200 cycles. Thereafter, the presence or absence of cracks in the ceramic member was measured by a fluorescent flaw detection method. Table 7 shows the results.

  Sample Nos. In which the thickness of the brazing material layer, which is an example within the preferred range of the present invention, is 100 ppm to 3000 ppm of the maximum diameter of the joint surface. All of the peeling-off after the argon plasma treatment of 71 to 75 was 2.9% or less, and no crack was generated due to the temperature cycle.

  However, the sample No. 1 in which the thickness of the aluminum brazing material layer is less than 100 ppm of the maximum diameter of the joint surface. In Nos. 76 and 77, cracks occurred in the ceramic member because the brazing material layer was not sufficiently deformed with respect to the temperature cycle. In addition, the sample No. 2 in which the thickness of the aluminum brazing material layer exceeds 3000 ppm of the maximum diameter of the joint surface. In Nos. 78 and 79, peeling of the brazing material layer deteriorated to 4.0% and 4.1% after exposure to argon plasma.

  A wafer support member was produced in the same manner as in Example 1, and the porosity of the aluminum brazing material was changed by changing the load when brazing the aluminum.

  The produced wafer support member 100 was sealed in a vacuum vessel 41 with an O-ring 48 and fixed with bolts 49 as shown in FIG. Then, helium gas was allowed to flow from the direction 42 and vacuum was drawn from 43 to evaluate the presence or absence of the He leak amount. The presence or absence of He leak was confirmed using a He leak detector.

Thereafter, a temperature cycle of −10 ° C. to 100 ° C. was performed 200 cycles. Thereafter, the presence or absence of cracks in the ceramic member 12 was measured by a fluorescent flaw detection method. Thereafter, the aluminum brazing material layer 14 was cut out, and the porosity was calculated by the Archimedes method. Table 8 shows the results.

  Sample No. 1 having a porosity of 1% to 10% of the brazing material layer, which is an example within the preferred range of the present invention. In 81-85, there was no He leak and there was no crack of the ceramic member after the temperature cycle.

  However, the sample Nos. In which the porosity of the brazing material layer is 0.1% and 0.5% below 1.0%. 86, no. In No. 87, cracks were observed in the ceramic member after the temperature cycle. Sample Nos. 11 and 15% having a porosity of the brazing material layer exceeding 10% were obtained. 88, no. In No. 89, a He leak was observed in the He leak test shown in FIG.

Ceramic member and the metal of the present invention - is a sectional view showing a schematic structure of an embodiment of the wafer support member using a bonded body of the ceramic multi engagement member. A) to F), the ceramic member and the metal of the present invention, respectively - is an enlarged cross-sectional view in the vicinity of the end face showing a recess of the outer periphery of the brazing material layer of the bonded structure of the ceramic multi engagement member. Ceramic member and the metal of the present invention - is an enlarged cross-sectional view showing a recess of the outer periphery of the brazing material layer of the bonded structure of the ceramic multi engagement member. It is a schematic sectional drawing which shows the measuring method of the He leak test of the wafer support member of this invention. Ceramic member and the metal of the prior art - is a cross-sectional view of a joined body of the ceramic multi engagement member. Ceramic member and the metal of the prior art - is a sectional view showing a recess of the outer periphery of the brazing material layer of the bonded structure of the ceramic multi engagement member.

Explanation of symbols

1. 10. Bonded body Electrostatic adsorption electrode 12. Ceramic member 13. Metal layer 14. Brazing material layer 15. Metal layer 16. Metal-ceramic composite member 17. Terminal 34. Maximum shear stress generation site 48. O-ring 49. Bolt 51. Ceramic sintered body plate for electrostatic chuck 52. Electrostatic adsorption electrode 53. Through hole 54. Bonding material 55. Ceramic / aluminum composite plate 61. Ceramic member 62. Metal layer 63. Brazing material layer 64. Metal layer 65. Metal - ceramic double if material 100. Wafer support member

Claims (16)

Ceramic member and a metal - ceramic multi case be bonded via a brazing material layer and a member of metal layers formed respectively on opposite major surfaces to each other, the outer peripheral end face of the brazing material layer in the metal layers, the metal A ceramic member and a metal-ceramic, wherein the ceramic member is located on the inner side of the outer peripheral edge of the layer, and at least one third of the thickness of the brazing material layer is recessed in the middle in the thickness direction. conjugates with click double coupling member. Conjugates of ceramic multi engagement member - ceramic member and a metal according to claim 1, wherein the cross-sectional shape in the thickness direction of the area is recessed inwardly of the brazing material layer is characterized by being curved. Claim 1, wherein the ceramic member and metal, wherein the depth of the region are recessed to the inside of the brazing material layer is 0.1 to 10 times the thickness of the brazing material layer - ceramic multi case A joined body with a member. The end face of the brazing material layer, a ceramic member and a metal according to claim 1, wherein the recessed curved in the thickness direction inside - ceramic joined body of the multi coupling member. Claim 4, wherein the ceramic member and metal, wherein the depth is recessed inwardly of the brazing material layer is 0.1 to 10 times the thickness of the brazing material layer - and the ceramic multi engagement member The joined body. An end surface of the brazing material layer is located on the inner side in a range of 0.1 times the thickness of the brazing material layer to 0.18 times the maximum diameter of the metal layer from the outer periphery of the metal layer. ceramic member and a metal according to any one of claims 1 to 5, - ceramic joined body of the multi coupling member. The brazing material layer is a ceramic member and a metal according to any one of claims 1 to 6, characterized in that it consists of an aluminum brazing material or indium brazing material - ceramic joined body of the multi coupling member. Ceramic joined body of the multi engagement member - ceramic member and a metal according to any one of claims 1 to 6, wherein the thickness of the brazing material layer is 100ppm~3000ppm the largest diameter of the joint surface. Ceramic joined body of the multi engagement member - ceramic member and a metal according to any one of claims 1 to 6, wherein the porosity of the brazing material layer is 1% to 10%. Ceramic member and a metal according to any one of claims 1 to 9 - ceramic provided with a bonded body of the click double coupling member, the ceramic member, the metal a plate-like - ceramic main surface of the multi coupling member side A wafer supporting member, wherein the other main surface facing the wafer is a wafer mounting surface. The wafer support member according to claim 10 , wherein the ceramic member incorporates a heater. The wafer support member according to claim 10 , wherein the ceramic member includes an electrode for electrostatic adsorption. The wafer support member according to claim 11 , wherein the ceramic member includes an electrode for electrostatic adsorption. A wafer is placed on the other main surface of the wafer support member according to claim 11, and after the wafer is heated by the heater, a film forming process using plasma or an etching process using plasma is performed on the wafer. A wafer processing method comprising: A film forming process using plasma on the wafer while placing the wafer on the other main surface of the wafer support member according to claim 12 and applying a voltage to the electrostatic adsorption electrode to adsorb the wafer. Alternatively, a wafer processing method comprising performing an etching process using plasma. A wafer is placed on the other main surface of the wafer support member according to claim 13 , a voltage is applied to the electrostatic adsorption electrode to adsorb the wafer, and the wafer is heated by the heater, and then applied to the wafer. A wafer processing method comprising performing a film forming process using plasma or an etching process using plasma.

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