JP3271352B2 - Electrostatic chuck, method of manufacturing the same, substrate processing apparatus, and substrate transfer apparatus - Google Patents
Electrostatic chuck, method of manufacturing the same, substrate processing apparatus, and substrate transfer apparatusInfo
- Publication number
- JP3271352B2 JP3271352B2 JP01946293A JP1946293A JP3271352B2 JP 3271352 B2 JP3271352 B2 JP 3271352B2 JP 01946293 A JP01946293 A JP 01946293A JP 1946293 A JP1946293 A JP 1946293A JP 3271352 B2 JP3271352 B2 JP 3271352B2
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- substrate
- ceramic plate
- mounting portion
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Jigs For Machine Tools (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【産業上の利用分野】本発明は、静電引力（クーロン
力）によってウエハ等の基板を吸引・保持する静電チャ
ック及びその作製方法、並びに静電チャックを備えた基
板処理装置及び基板搬送装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck for sucking and holding a substrate such as a wafer by electrostatic attraction (Coulomb force), a method of manufacturing the same, a substrate processing apparatus provided with the electrostatic chuck, and a substrate transfer apparatus. About.
【０００２】[0002]
【従来の技術】半導体装置製造工程においては、ドライ
エッチング装置、プラズマＣＶＤ装置、スパッタリング
装置、イオン注入装置、アッシング装置、電子ビームリ
ソグラフィ装置、Ｘ線リソグラフィ装置、露光装置等の
各種基板処理装置の基板載置部（基板載置ステージ）に
静電チャックが用いられている。2. Description of the Related Art In a semiconductor device manufacturing process, substrates of various substrate processing apparatuses such as a dry etching apparatus, a plasma CVD apparatus, a sputtering apparatus, an ion implantation apparatus, an ashing apparatus, an electron beam lithography apparatus, an X-ray lithography apparatus, and an exposure apparatus are used. An electrostatic chuck is used for a mounting section (substrate mounting stage).
【０００３】例えば、プラズマエッチング装置あるいは
プラズマＣＶＤ装置においては、装置内の２枚の平行平
板電極の間に適当な圧力のガスを導入し、これらの電極
にＲＦ電力を加えることによって生成されたプラズマを
用いてエッチングあるいはＣＶＤを行う。例えばエッチ
ングの場合、プラズマからの熱やエッチング反応の進行
の影響で、ウエハ等のエッチングを正確に制御すること
が困難になる。それ故、ウエハ等を冷却しつつエッチン
グを行うことによって高精度にエッチングを制御する、
低温エッチング技術の検討が進められている。For example, in a plasma etching apparatus or a plasma CVD apparatus, a gas at an appropriate pressure is introduced between two parallel plate electrodes in the apparatus, and RF power is applied to these electrodes. Etching or CVD is performed using the plasma generated by the above. For example, in the case of etching, it becomes difficult to accurately control the etching of a wafer or the like due to the influence of heat from the plasma or the progress of the etching reaction. Therefore, by controlling the etching with high accuracy by performing the etching while cooling the wafer and the like,
Studies on low-temperature etching technology are under way.
【０００４】このような装置においては、ウエハ等の基
板と基板載置部との間は真空であり伝熱効率が低いた
め、基板を冷却するには、２枚の平行平板電極の内の一
方の電極を兼ねた基板載置部を冷却するだけでは不十分
である。そこで、基板の冷却効率を高めるために、通
常、基板裏面に不活性ガスを流す。このとき、基板を基
板載置部上に確実に固定する必要がある。In such an apparatus, since the space between the substrate such as a wafer and the substrate mounting portion is vacuum and the heat transfer efficiency is low, to cool the substrate, one of the two parallel plate electrodes is used to cool the substrate. It is not sufficient to simply cool the substrate mounting part which also serves as an electrode. Therefore, in order to increase the cooling efficiency of the substrate, an inert gas is usually flowed on the back surface of the substrate. At this time, it is necessary to securely fix the substrate on the substrate mounting portion.
【０００５】基板処理装置における基板固定手段とし
て、一般に、メカニカルクランプ方式と静電チャック方
式を挙げることができる。メカニカルクランプ方式は、
基板を基板載置部に均一に固定することが困難であり、
しかも、プラズマに対する悪影響及びダスト発生の原因
となるという問題を有する。一方、静電チャック方式
は、基板の表面に直接静電チャックが接触しないので、
プラズマに対する悪影響やダストの発生という問題がな
く、しかも基板を基板載置部に均一に固定できるので、
基板の固定手段として好ましい方法である。[0005] As a substrate fixing means in a substrate processing apparatus, a mechanical clamp system and an electrostatic chuck system can be generally mentioned. The mechanical clamp method
It is difficult to fix the substrate uniformly on the substrate mounting part,
In addition, there is a problem that the plasma is adversely affected and dust is generated. On the other hand, in the electrostatic chuck method, the electrostatic chuck does not directly contact the surface of the substrate,
There is no problem of adverse effects on plasma or generation of dust, and the substrate can be fixed uniformly to the substrate mounting part.
This is a preferable method for fixing the substrate.
【０００６】基板処理装置に備えられた静電チャック
は、２つの形式に分類することができる。[0006] The electrostatic chuck provided in the substrate processing apparatus can be classified into two types.
【０００７】第１の形式の静電チャックは、図４の
（Ａ）に模式的断面図を示すように、金属から成る基板
載置部３０と、絶縁材料３２から成る。基板載置部は静
電チャックを兼ねている。即ち、基板載置部３０は、静
電チャック用電極、及び基板処理装置によっては２枚の
平行平板電極の内の一方の電極（かかる電極をステージ
電極とも呼ぶ）をも兼ねている。絶縁材料３２は、例え
ば接着剤等の接合材３４によって基板載置部３０の表面
に取り付けられている。必要に応じて、基板載置部内に
冷媒流路３６を設け、冷媒流路３６内に冷媒を流すこと
によって基板載置部３０を所望の温度に制御する。更
に、必要に応じてウエハ等の基板の裏面にヘリウムガス
等の不活性ガスをガス供給口２０から供給する。かかる
不活性ガスは熱媒体として機能し、基板への伝熱効率を
高めている。As shown in FIG. 4A, a first type of electrostatic chuck includes a substrate mounting portion 30 made of metal and an insulating material 32. The substrate mounting portion also serves as an electrostatic chuck. That is, the substrate mounting unit 30 has two electrodes depending on the electrostatic chuck electrode and the substrate processing apparatus.
One of the parallel plate electrodes also serves as a stage electrode. The insulating material 32 is attached to the surface of the substrate mounting portion 30 by a bonding material 34 such as an adhesive. If necessary, a coolant flow path 36 is provided in the substrate placement section, and the coolant is passed through the coolant flow path 36 to control the substrate placement section 30 to a desired temperature. Further, an inert gas such as helium gas is supplied from the gas supply port 20 to the back surface of the substrate such as a wafer as needed. Such an inert gas functions as a heat medium and increases the efficiency of heat transfer to the substrate.
【０００８】ウエハ等の基板を基板載置部３０に固定す
る場合、静電チャック用電極を兼ねた基板載置部３０に
高圧の直流電圧を印加する。その結果、絶縁材料３２の
表面に静電気が生じ、これによって基板は基板載置部３
０に吸引・固定される。ウエハ等の基板の処理時、基板
処理装置によっては、ステージ電極を兼ねた基板載置部
３０に高周波電圧を印加する。When a substrate such as a wafer is fixed to the substrate mounting portion 30, a high DC voltage is applied to the substrate mounting portion 30 also serving as an electrode for electrostatic chuck. As a result, static electricity is generated on the surface of the insulating material 32, whereby the substrate is placed on the substrate mounting portion 3.
Suctioned and fixed to 0. At the time of processing a substrate such as a wafer, a high-frequency voltage is applied to the substrate mounting portion 30 also serving as a stage electrode, depending on the substrate processing apparatus.
【０００９】第２の形式の静電チャック４０は、図４の
（Ｂ）に模式的断面図を示すように、金属から成る基板
載置部４６の上に取り付けられている。即ち、第１の形
式とは異なり、静電チャックと基板載置部は別個の部品
である。静電チャック４０は、絶縁材料から成る基体４
２と、基体４２の内部に配設されたアルミニウムや銅等
の金属薄膜から成る静電チャック用電極４４から構成さ
れている。基板載置部４６は、基板処理装置によって
は、ステージ電極を兼ねている。必要に応じて、基板載
置部４６内に冷媒流路４８を設け、冷媒流路４８内に冷
媒を流すことによって基板載置部４６を所望の温度に制
御する。更に、必要に応じてウエハ等の基板の裏面にヘ
リウムガス等の不活性ガスをガス供給口２０から供給す
る。A second type of electrostatic chuck 40 is mounted on a substrate mounting portion 46 made of metal as shown in a schematic sectional view of FIG. That is, unlike the first type, the electrostatic chuck and the substrate mounting portion are separate components. The electrostatic chuck 40 includes a base 4 made of an insulating material.
2 and an electrostatic chuck electrode 44 made of a thin metal film such as aluminum or copper disposed inside the base 42. The substrate mounting section 46 also serves as a stage electrode depending on the substrate processing apparatus. If necessary, a coolant flow path 48 is provided in the substrate placement section 46, and the coolant is caused to flow through the coolant flow path 48 to control the substrate placement section 46 to a desired temperature. Further, an inert gas such as helium gas is supplied from the gas supply port 20 to the back surface of the substrate such as a wafer as needed.
【００１０】ウエハ等の基板を静電チャック４０にて吸
引・固定する場合、静電チャック用電極４４に高圧の直
流電圧を印加する。その結果、静電チャック４０の表面
に静電気が生じ、これによって基板は静電チャック４０
に吸引・固定される。ウエハ処理装置によっては、ウエ
ハ等の基板の処理時、基板載置部４６（ステージ電極）
に高周波電圧を印加する。When a substrate such as a wafer is suctioned and fixed by the electrostatic chuck 40, a high DC voltage is applied to the electrostatic chuck electrode 44. As a result, static electricity is generated on the surface of the electrostatic chuck 40, so that the substrate is
Is sucked and fixed. In some wafer processing apparatuses, when processing a substrate such as a wafer, the substrate mounting portion 46 (stage electrode)
Is applied with a high-frequency voltage.
【００１１】静電チャックと基板との間に働くクーロン
力Ｆは、 Ｆ＝（Ｓ／２）ε（Ｖ／ｄ）2 式（１） で表すことができる。ここで、Ｓは静電チャックの電極
面積、εは絶縁材料の誘電率、Ｖは印加電圧、ｄは絶縁
材料の厚さである。The Coulomb force F acting between the electrostatic chuck and the substrate can be expressed by F = (S / 2) ε (V / d) 2 Equation (1). Here, S is the electrode area of the electrostatic chuck, ε is the dielectric constant of the insulating material, V is the applied voltage, and d is the thickness of the insulating material.
【００１２】式（１）から、吸引・固定力の強い静電チ
ャックを作製するためには、絶縁材料の厚さをできる限
る薄くする一方、絶縁材料は高い絶縁破壊電圧を有する
ことが必要とされる。また、基板処理装置によっては、
静電チャックを真空下で使用するため、静電チャックに
は脱ガス特性（真空特性）が優れていることも要求され
る。更に、半導体装置の各製造工程において、場合によ
っては、ウエハ等の基板を正確に温度制御する必要があ
るため、静電チャックには熱伝導率が高いことも必要と
される。From the formula (1), in order to manufacture an electrostatic chuck having a strong suction / fixing force, it is necessary that the thickness of the insulating material be as thin as possible while the insulating material has a high dielectric breakdown voltage. Is done. Also, depending on the substrate processing apparatus,
Since the electrostatic chuck is used in a vacuum, the electrostatic chuck is also required to have excellent degassing properties (vacuum properties). Further, in each manufacturing process of the semiconductor device, in some cases, it is necessary to accurately control the temperature of a substrate such as a wafer, so that the electrostatic chuck also needs to have high thermal conductivity.
【００１３】[0013]
【発明が解決しようとする課題】絶縁材料として、例え
ばポリイミドから成る高分子系絶縁シートを用い、接合
材３４として有機系接着剤を用いて絶縁材料３２を基板
載置部３０の表面に張り合わせた場合、あるいは、かか
る高分子絶縁シートから成る基体４２を静電チャック用
電極４４に有機系接着剤を使用して張り合わせた場合、
絶縁材料の厚さは０．１ｍｍ以下にすることができる。
しかしながら、高分子系絶縁シートは、耐摩耗性、耐プ
ラズマ性に乏しい。また、有機系接着剤を用いるので、
真空特性が悪く、更に、接着剤の凹凸に起因して静電チ
ャックの表面平滑性が悪くなり基板に対する吸引力が低
下する。A polymer insulating sheet made of, for example, polyimide is used as an insulating material, and an insulating material 32 is attached to the surface of the substrate mounting portion 30 using an organic adhesive as a bonding material. In the case where the substrate 42 made of such a polymer insulating sheet is bonded to the electrode 44 for electrostatic chuck using an organic adhesive,
The thickness of the insulating material can be 0.1 mm or less.
However, the polymer insulating sheet has poor abrasion resistance and plasma resistance. Also, since an organic adhesive is used,
The vacuum characteristics are poor, and the surface smoothness of the electrostatic chuck is deteriorated due to the unevenness of the adhesive, and the suction force to the substrate is reduced.
【００１４】絶縁材料から成る基体４２としてセラミッ
ク材料を使用し、かかる２枚のセラミック材料の間に静
電チャック用電極４４を挟み、セラミック材料を焼結さ
せることによって作製された第２の形式の静電チャック
４０は、接着剤を用いていないので、真空特性に優れ、
耐摩耗性、耐プラズマ性にも優れている。しかしなが
ら、通常、吸引側のセラミック材料の厚さが０．５ｍｍ
以上あるため、静電チャックの静電吸引力が低く、熱伝
導率も低いという問題がある。A ceramic material is used as a substrate 42 made of an insulating material, an electrostatic chuck electrode 44 is sandwiched between the two ceramic materials, and the ceramic material is sintered to form a second type. Since the electrostatic chuck 40 does not use an adhesive, it has excellent vacuum characteristics,
Excellent wear resistance and plasma resistance. However, usually the thickness of the ceramic material on the suction side is 0.5 mm
For these reasons, there is a problem that the electrostatic chucking force of the electrostatic chuck is low and the thermal conductivity is low.
【００１５】絶縁材料としてセラミック薄膜を使用し、
ＣＶＤ法又は蒸着によって基板載置部３０の表面又は静
電チャック用電極４４の表面にかかるセラミック薄膜を
形成した静電チャックにおいては、セラミック薄膜が１
０μｍ以上になると表面から剥離するという問題があ
る。また、セラミック薄膜が１０μｍ未満では絶縁破壊
電圧が低いという問題もある。Using a ceramic thin film as an insulating material,
In the electrostatic chuck in which the ceramic thin film is formed on the surface of the substrate mounting portion 30 or the surface of the electrode for electrostatic chuck 44 by CVD or vapor deposition, the ceramic thin film has
If the thickness is 0 μm or more, there is a problem of peeling from the surface. Further, when the thickness of the ceramic thin film is less than 10 μm, there is a problem that the dielectric breakdown voltage is low.
【００１６】絶縁材料としてセラミックを使用し、基板
載置部３０の表面又は静電チャック用電極４４の表面に
セラミックを溶射した静電チャックにおいては、絶縁材
料の厚さを１００μｍ程度にすることができる。しかし
ながら、溶射されたセラミック薄膜の表面は多孔質で粗
く、表面を平滑にするためには高分子溶液の含浸が必要
である。また、溶射されたセラミック薄膜は、絶縁破壊
電圧が低いという問題もある。In an electrostatic chuck in which ceramic is used as the insulating material and the ceramic is sprayed on the surface of the substrate mounting portion 30 or the surface of the electrode for electrostatic chuck 44, the thickness of the insulating material may be about 100 μm. it can. However, the surface of the sprayed ceramic thin film is porous and rough, and impregnation with a polymer solution is required to smooth the surface. Further, the sprayed ceramic thin film has a problem that the dielectric breakdown voltage is low.
【００１７】絶縁材料としてセラミック板を使用し、基
板載置部３０の表面に有機系接着剤によってセラミック
板を張り付け、あるいは２枚のセラミック板の間に静電
チャック用電極４４を挟みこれらのセラミック板を有機
系接着剤によって張り合わせた静電チャックは、接着剤
を用いているため、真空特性が悪く、耐熱性に劣るとい
う問題がある。また、接着強度が低いので、セラミック
板を接着した後、セラミック板を薄く加工することが極
めて困難である。従って、接着前にセラミック板を薄く
加工しなければならないが、大面積のセラミック板を薄
くする加工は極めて困難である。A ceramic plate is used as an insulating material, and a ceramic plate is adhered to the surface of the substrate mounting portion 30 with an organic adhesive, or these ceramic plates are sandwiched between two ceramic plates with an electrostatic chuck electrode 44 interposed therebetween. Since the electrostatic chuck bonded with an organic adhesive uses an adhesive, there is a problem that vacuum characteristics are poor and heat resistance is poor. In addition, since the bonding strength is low, it is extremely difficult to thin the ceramic plate after bonding the ceramic plate. Therefore, the ceramic plate must be thinned before bonding, but it is extremely difficult to thin a large-area ceramic plate.
【００１８】絶縁材料としてセラミック板を使用し、基
板載置部３０の表面にセラミック板をロウ材（例えば、
Ａｇ−Ｃｕ合金）によって張り付けた静電チャックは、
絶縁特性、耐熱性、接合強度の全てに優れている。しか
しながら、ロウ付け処理には８００〜８５０゜Ｃの高温
を必要とするため、基板載置部３０の材料に耐熱性が要
求される。このような材料、例えばＳｉＣ、は取扱いが
困難であり、高価でもある。A ceramic plate is used as an insulating material, and the ceramic plate is brazed (for example,
(Ag-Cu alloy)
Excellent in all of insulation properties, heat resistance and bonding strength. However, since the brazing process requires a high temperature of 800 to 850 ° C., the material of the substrate mounting portion 30 needs to have heat resistance. Such materials, such as SiC, are difficult to handle and expensive.
【００１９】上記第２の形式の静電チャックを水冷電極
に金属ボンディングによって取り付けた基板保持装置
が、特開平３−３２４９号公報から公知である。この静
電チャックにおいては、静電チャック用電極を挟み込ん
だ２枚のセラミック板を焼結して成る静電チャックの背
面にＣｒ層及びＣｕ層を蒸着し、更に、Ｃｕ層の上に湿
式めっきによりＩｎ層を形成する。水冷電極の表面にも
湿式めっきによってＩｎ層を形成する。そして約１５０
゜Ｃ以下の低温で両Ｉｎ層同士を融着させることによっ
て静電チャックを水冷電極に金属ボンディングする。こ
の形式の静電チャックにおけるセラミック板の厚さは通
常０．５ｍｍ以上もあり、吸引・固定力が低いという問
題がある。A substrate holding device in which an electrostatic chuck of the second type is mounted on a water-cooled electrode by metal bonding is known from Japanese Patent Application Laid-Open No. 3-3249. In this electrostatic chuck, a Cr layer and a Cu layer are deposited on the back surface of an electrostatic chuck formed by sintering two ceramic plates sandwiching an electrode for the electrostatic chuck, and wet plating is performed on the Cu layer. To form an In layer. An In layer is also formed on the surface of the water-cooled electrode by wet plating. And about 150
The electrostatic chuck is metal-bonded to the water-cooled electrode by fusing the two In layers together at a low temperature of ゜ C or less. The thickness of the ceramic plate in this type of electrostatic chuck is usually 0.5 mm or more, and there is a problem that the suction / fixing force is low.
【００２０】石英ガラス又はアルミナセラミックから成
る基板本体と、石英ガラスから成る誘電体と、誘電体の
裏面に蒸着された静電チャック用電極から成り、静電チ
ャック用電極と基板本体とを接着剤で接着した第２の形
式の静電チャックが、実願昭５８−１８９５６１号（実
開昭６０−９６８３２号）の明細書に開示されている。
この明細書には、静電チャック用電極と基板本体とを接
着剤で接着した後、研磨等によって誘電体の表面を削り
取り、誘電体の厚さを所望の厚さにする旨が記載されて
いる。この明細書に記載された静電チャックは、接着剤
を使用しているので、真空特性が悪く、耐熱性に劣ると
いう問題がある。また、接着強度が低いので、セラミッ
ク板を接着した後セラミック板を薄く加工することが、
実際には極めて困難である。A substrate body made of quartz glass or alumina ceramic, a dielectric made of quartz glass, and an electrode for an electrostatic chuck deposited on the back surface of the dielectric, and the electrode for the electrostatic chuck and the substrate body are bonded with an adhesive. A second type of electrostatic chuck is disclosed in Japanese Utility Model Application No. 58-189561 (Japanese Utility Model Application Laid-Open No. 60-96832).
This specification describes that after bonding the electrode for electrostatic chuck and the substrate body with an adhesive, the surface of the dielectric is scraped off by polishing or the like, and the thickness of the dielectric is adjusted to a desired thickness. I have. Since the electrostatic chuck described in this specification uses an adhesive, there is a problem that vacuum characteristics are poor and heat resistance is poor. Also, since the bonding strength is low, it is possible to process the ceramic plate thinly after bonding the ceramic plate,
In practice it is extremely difficult.
【００２１】従って、本発明の目的は、吸引力が強く、
耐摩耗性、耐熱性、耐プラズマ性、真空特性、表面平滑
性、絶縁特性に優れ、熱伝導率が高く、高強度を有す
る、基板載置部を兼ねた静電チャック及びその作製方
法、並びにかかる静電チャックを備えた基板処理装置及
び基板搬送装置を提供することにある。Accordingly, an object of the present invention is to provide a strong suction force,
An electrostatic chuck that also has excellent wear resistance, heat resistance, plasma resistance, vacuum properties, surface smoothness, insulation properties, high thermal conductivity, high strength, and also serves as a substrate mounting portion, and a method for producing the same, and It is an object of the present invention to provide a substrate processing apparatus and a substrate transfer apparatus provided with such an electrostatic chuck.
【００２２】[0022]
【課題を解決するための手段】上記の目的を達成するた
めの本発明の静電チャックは、上記第１の形式の静電チ
ャックに分類される。そして、静電チャック用電極を兼
ねた金属から成る基板載置部、及び基板載置部の表面に
低温ロウ付け材料にて接着されたセラミック板から成る
ことを特徴とする。セラミック板は窒化アルミニウムか
ら成ることが、高熱伝導率の面から好ましい。低温ロウ
付け材料として、ＩｎあるいはＰｂ−Ｓｎ等を用いるこ
とができる。The electrostatic chuck of the present invention for achieving the above object is classified into the first type of electrostatic chuck. Further, it is characterized by comprising a substrate mounting portion made of metal also serving as an electrode for an electrostatic chuck, and a ceramic plate adhered to the surface of the substrate mounting portion with a low-temperature brazing material. The ceramic plate is preferably made of aluminum nitride from the viewpoint of high thermal conductivity. In or Pb-Sn or the like can be used as a low-temperature brazing material.
【００２３】本発明の静電チャックにおいては、ウエハ
等の基板の処理時、低温ロウ付け材料からのスパーク発
生を防止するために、基板載置部とセラミック板との間
に介在する低温ロウ付け材料の露出部分を合成樹脂で被
覆することが望ましい。In the electrostatic chuck according to the present invention, when a substrate such as a wafer is processed, low-temperature brazing interposed between the substrate mounting portion and the ceramic plate is performed in order to prevent spark from a low-temperature brazing material. It is desirable to coat the exposed portion of the material with a synthetic resin.
【００２４】また、上記の目的を達成するために、本発
明の静電チャックの作製方法は、静電チャック用電極を
兼ねた金属から成る基板載置部の表面にセラミック板を
低温ロウ付け材料を用いて低温ロウ付け法にて接着させ
た後、セラミック板の表面を研磨してセラミック板の厚
さを所望の厚さにすることを特徴とする。セラミック板
の所望の厚さは、静電吸引力と絶縁破壊電圧との関係を
考慮すると、２０〜１００μｍであることが望ましい。According to another aspect of the present invention, there is provided a method of manufacturing an electrostatic chuck, comprising the steps of: forming a ceramic plate on a surface of a substrate mounting portion made of a metal also serving as an electrode for the electrostatic chuck; And bonding the ceramic plate by a low-temperature brazing method, and then polishing the surface of the ceramic plate to a desired thickness. The desired thickness of the ceramic plate is desirably 20 to 100 μm in consideration of the relationship between the electrostatic attractive force and the dielectric breakdown voltage.
【００２５】本発明の静電チャックの作製方法において
は、ウエハ等の基板の処理時、低温ロウ付け材料からの
スパーク発生を防止するために、基板載置部とセラミッ
ク板との間に介在する低温ロウ付け材料の露出部分を合
成樹脂で被覆する工程を更に含むことが望ましい。In the method of manufacturing an electrostatic chuck according to the present invention, during processing of a substrate such as a wafer, an intervening member is interposed between the substrate mounting portion and the ceramic plate in order to prevent spark from a low-temperature brazing material. Preferably, the method further comprises the step of coating the exposed portion of the low-temperature brazing material with a synthetic resin.
【００２６】本発明の基板処理装置は、上述の本発明の
静電チャックを備えていることを特徴とする。基板処理
装置としては、ドライエッチング装置、プラズマＣＶＤ
装置、スパッタリング装置、イオン注入装置、アッシン
グ装置、電子ビームリソグラフィ装置、Ｘ線リソグラフ
ィ装置、露光装置を挙げることができる。A substrate processing apparatus according to the present invention includes the above-described electrostatic chuck according to the present invention. Dry etching equipment, plasma CVD
Examples include an apparatus, a sputtering apparatus, an ion implantation apparatus, an ashing apparatus, an electron beam lithography apparatus, an X-ray lithography apparatus, and an exposure apparatus.
【００２７】また、本発明の基板搬送装置は、上述の本
発明の静電チャックを備えていることを特徴とする。Further, a substrate transfer apparatus of the present invention includes the above-described electrostatic chuck of the present invention.
【００２８】本発明の基板処理装置あるいは基板搬送装
置における基板とは、シリコン等の半導体基板、ＧａＡ
ｓ等の半絶縁性基板あるいは石英ガラス等の絶縁基板を
挙げることができる。The substrate in the substrate processing apparatus or the substrate transfer apparatus according to the present invention is a semiconductor substrate such as silicon or GaAs.
and a semi-insulating substrate such as s or an insulating substrate such as quartz glass.
【００２９】[0029]
【作用】本発明の静電チャックは、基板載置部の表面に
セラミック板を低温ロウ付け法にて接着させて成る。低
温ロウ付けは３００゜Ｃ前後で行うことができるので、
基板載置部をアルミニウム等の通常の金属材料から作製
することができ、耐熱性の高い材料である必要がない。
また、静電チャックはその表面がセラミック板から構成
されているので、耐摩耗性、耐熱性、耐プラズマ性、真
空特性、絶縁特性に優れ、高強度である。また、窒化ア
ルミニウム等から成るセラミック板を使用すれば、熱伝
導率を高くすることができる。The electrostatic chuck of the present invention is formed by bonding a ceramic plate to the surface of a substrate mounting portion by a low-temperature brazing method. Since low-temperature brazing can be performed at around 300 ° C,
The substrate mounting portion can be made of a normal metal material such as aluminum, and does not need to be a material having high heat resistance.
In addition, since the surface of the electrostatic chuck is made of a ceramic plate, it has excellent wear resistance, heat resistance, plasma resistance, vacuum characteristics, insulation characteristics, and high strength. Further, when a ceramic plate made of aluminum nitride or the like is used, the thermal conductivity can be increased.
【００３０】本発明の静電チャックの作製方法は、基板
載置部の表面にセラミック板を低温ロウ付け法にて接着
させた後、セラミック板の表面を研磨してセラミック板
の厚さを所望の厚さとするので、セラミック板の加工が
容易であると同時に、セラミック板の厚さを薄くでき、
静電吸引力を高くすることができ、しかも表面平滑性に
優れた静電チャックを作製することができる。According to the method of manufacturing an electrostatic chuck of the present invention, a ceramic plate is adhered to the surface of a substrate mounting portion by a low-temperature brazing method, and then the surface of the ceramic plate is polished to obtain a desired thickness of the ceramic plate. The thickness of the ceramic plate can be easily processed, and at the same time, the thickness of the ceramic plate can be reduced.
An electrostatic chuck having high electrostatic attraction and excellent surface smoothness can be manufactured.
【００３１】[0031]
【実施例】以下、図面を参照して、実施例に基づき本発
明を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described based on embodiments with reference to the drawings.
【００３２】（実施例１）本発明の静電チャックは、先
に述べた第１の形式の静電チャックである。即ち、基板
載置部は静電チャックを兼ねている。実施例１の静電チ
ャックは、図１に模式的断面図を示すように、金属から
成る基板載置部１０と、例えば窒化アルミニウムから成
るセラミック板１２から構成されている。基板載置部１
０は例えばアルミニウムから作製され、電極（静電チャ
ック用電極、及び必要に応じてステージ電極）を兼ねて
いる。(Embodiment 1) The electrostatic chuck of the present invention is the first type of electrostatic chuck described above. That is, the substrate mounting portion also serves as an electrostatic chuck. As shown in a schematic sectional view in FIG. 1, the electrostatic chuck according to the first embodiment includes a substrate mounting portion 10 made of metal and a ceramic plate 12 made of, for example, aluminum nitride. Substrate mounting part 1
Numeral 0 is made of, for example, aluminum, and also serves as an electrode (electrode for electrostatic chuck and, if necessary, stage electrode).
【００３３】セラミック板１２は基板載置部１０の表面
に、Ｉｎ又はＰｂ−Ｓｎから成る低温ロウ付け材料１４
によって接着されている。基板載置部１０内には、必要
に応じて、温度センサ付きの加熱ヒーター１６及び／又
は冷媒流路１８が設けられており、加熱ヒーター１６に
電流を流しあるいは冷媒流路１８内に冷媒（例えば、水
や液体窒素等）を流すことによって、基板載置部１０を
所望の温度に制御することができる。The ceramic plate 12 is provided with a low-temperature brazing material 14 made of In or Pb-Sn on the surface of the substrate mounting portion 10.
Adhered by A heater 16 with a temperature sensor and / or a coolant channel 18 are provided in the substrate mounting portion 10 as necessary, and an electric current is supplied to the heater 16 or a coolant ( By flowing water or liquid nitrogen, for example), the substrate mounting unit 10 can be controlled to a desired temperature.
【００３４】ウエハ等の基板を静電チャック用電極を兼
ねた基板載置部１０に固定する場合、基板載置部１０に
高圧の直流電圧を印加する。同時に、例えば、基板の近
傍にプラズマを発生させ、あるいは基板表面にエレクト
ロンシャワー等によって電子を供給する。その結果、セ
ラミック板１２の表面が誘電分極を起こし、表面に静電
気が生じる。これによってクーロン力が発生し、ウエハ
等の基板は基板載置部１０に吸引・固定される。ウエハ
等の基板の処理時、必要に応じて、ステージ電極を兼ね
た基板載置部１０に高周波電圧を印加する。併せて、加
熱ヒーター１６に電流を流し、あるいは冷媒流路１８内
に冷媒を流し、更に、必要に応じてウエハ等の基板の裏
面にヘリウムガス等の不活性ガスをガス供給口２０から
供給する。かかる不活性ガスは熱媒体として機能する。
こうして、基板の温度を正確に制御しつつ、基板を基板
載置部１０に吸引・固定した状態で、基板を処理するこ
とができる。When a substrate such as a wafer is fixed to the substrate platform 10 also serving as an electrode for electrostatic chuck, a high DC voltage is applied to the substrate platform 10. At the same time, for example, a plasma is generated near the substrate, or electrons are supplied to the surface of the substrate by an electron shower or the like. As a result, the surface of the ceramic plate 12 undergoes dielectric polarization, and static electricity is generated on the surface. As a result, a Coulomb force is generated, and a substrate such as a wafer is suctioned and fixed to the substrate mounting portion 10. At the time of processing a substrate such as a wafer, a high-frequency voltage is applied to the substrate mounting portion 10 which also serves as a stage electrode, if necessary. At the same time, an electric current is supplied to the heater 16 or a refrigerant is supplied to the refrigerant passage 18, and an inert gas such as helium gas is supplied from the gas supply port 20 to the back surface of the substrate such as a wafer, if necessary. . Such an inert gas functions as a heat carrier.
In this way, the substrate can be processed while the substrate is suctioned and fixed to the substrate mounting portion 10 while accurately controlling the temperature of the substrate.
【００３５】本発明の静電チャックの作製方法を、以下
説明する。セラミック板１２は絶縁耐圧が高ければ如何
なるセラミック板でもよいが、熱伝導率の高い窒化アル
ミニウム（ＡｌＮ）から成ることが好ましい。先ず、厚
さ数ｍｍのセラミック板１２の裏面に厚さ数μｍのバリ
アメタル層をスパッタリングにて形成する。バリアメタ
ル層は、Ｍｏ／Ｃｕ合金、Ｔｉ／Ｃｕ合金、Ｔｉ／Ｎｉ
／Ａｕ合金、Ｃｒ／Ｎｉ／Ａｕ合金等から構成すること
ができる。The method of manufacturing the electrostatic chuck according to the present invention will be described below. The ceramic plate 12 may be any ceramic plate as long as the withstand voltage is high, but is preferably made of aluminum nitride (AlN) having high thermal conductivity. First, a barrier metal layer having a thickness of several μm is formed on the back surface of the ceramic plate 12 having a thickness of several mm by sputtering. The barrier metal layer is made of Mo / Cu alloy, Ti / Cu alloy, Ti / Ni
/ Au alloy, Cr / Ni / Au alloy or the like.
【００３６】例えばアルミニウムから作製された基板載
置部１０の形状は任意である。セラミック板を接着すべ
き静電チャック用電極を兼ねた基板載置部１０の表面
に、濡れ性改善のために、スパッタリングによって厚さ
数μｍのＣｕ層を形成する。次いで、Ｃｕ層が形成され
た基板載置部１０とバリアメタル層が形成されたセラミ
ック板１２とを、低温ロウ付け材料１４を用いて低温ロ
ウ付け法で接着させる。低温ロウ付け材料１４として、
Ｉｎ又はＰｂ−Ｓｎを使用した。接着温度は３００゜Ｃ
前後である。溶融した低温ロウ付け材料１４中に気泡が
混入しないように、真空中で低温ロウ付け作業を行うこ
とが望ましい。低温ロウ付け材料１４の厚さは約０．２
ｍｍである。こうして、静電チャック用電極を兼ねた金
属から成る基板載置部１０の表面にセラミック板１２を
低温ロウ付け材料１４を用いて低温ロウ付け法にて接着
させた。The shape of the substrate mounting portion 10 made of, for example, aluminum is arbitrary. A Cu layer having a thickness of several μm is formed by sputtering on the surface of the substrate mounting portion 10 also serving as an electrostatic chuck electrode to which a ceramic plate is to be adhered, in order to improve wettability. Next, the substrate mounting portion 10 on which the Cu layer is formed and the ceramic plate 12 on which the barrier metal layer is formed are bonded by using a low-temperature brazing material 14 by a low-temperature brazing method. As the low-temperature brazing material 14,
In or Pb-Sn was used. Adhesion temperature is 300 ° C
Before and after. It is desirable to perform the low-temperature brazing operation in a vacuum so that air bubbles do not enter the molten low-temperature brazing material 14. The thickness of the low-temperature brazing material 14 is about 0.2
mm. Thus, the ceramic plate 12 was bonded to the surface of the substrate mounting portion 10 made of metal also serving as an electrode for the electrostatic chuck by the low-temperature brazing method using the low-temperature brazing material 14.
【００３７】低温ロウ付け法にて基板載置部１０に接着
されたままのセラミック板１２の厚さは数ｍｍであり、
この状態では、極めて小さなクーロン力しか得ることが
できない。そこで、次に、研磨等によってセラミック板
１２の表面を削り取り、セラミック板１２の厚さを所望
の厚さ、例えば２０〜１００μｍにする。セラミック板
１２は低温ロウ付け材料１４によって基板載置部１０に
強固に接着されているので（例えば、５０ｋｇ／ｍｍ2
程度）、セラミック板１２の表面の研磨を容易に行うこ
とができる。研磨後のセラミック板１２の表面粗さが小
さい程、静電吸引力は大きくなる。The thickness of the ceramic plate 12 adhered to the substrate mounting portion 10 by the low-temperature brazing method is several mm,
In this state, only a very small Coulomb force can be obtained. Then, next, the surface of the ceramic plate 12 is scraped off by polishing or the like, and the thickness of the ceramic plate 12 is reduced to a desired thickness, for example, 20 to 100 μm. Since the ceramic plate 12 is firmly bonded to the substrate mounting portion 10 by the low-temperature brazing material 14 (for example, 50 kg / mm 2
Degree), the surface of the ceramic plate 12 can be easily polished. The smaller the surface roughness of the polished ceramic plate 12, the greater the electrostatic attraction force.
【００３８】こうして、基板載置部と一体となった静電
チャックを作製することができる。かかる基板載置部１
０を各種基板処理装置に組み込むことによって、基板処
理装置を作製することができる。[0038] Zi, it is possible to produce an electrostatic chuck integrated with the substrate platform. Such a substrate mounting section 1
By incorporating 0 in various substrate processing apparatuses, a substrate processing apparatus can be manufactured.
【００３９】（実施例２）実施例２は、実施例１で説明
した本発明の静電チャック及び静電チャックの作製方法
の変形である。実施例２における静電チャックにおいて
は、図２に模式的な断面図を示すように、基板載置部１
０とセラミック板１２との間に介在する低温ロウ付け材
料１４の露出部分１４Ａを合成樹脂２２で被覆した。合
成樹脂としてはポリイミド樹脂を使用した。(Embodiment 2) Embodiment 2 is a modification of the electrostatic chuck and the method of manufacturing the electrostatic chuck of the present invention described in Embodiment 1. In the electrostatic chuck according to the second embodiment, as shown in a schematic sectional view of FIG.
The exposed portion 14 </ b> A of the low-temperature brazing material 14 interposed between the metal plate 0 and the ceramic plate 12 was covered with a synthetic resin 22. A polyimide resin was used as the synthetic resin.
【００４０】実施例２の静電チャックにおいては、電極
を兼ねた金属から成る基板載置部１０の表面にセラミッ
ク板１２を低温ロウ付け材料１４を用いて低温ロウ付け
法にて接着させた後、セラミック板１２の表面を研磨し
てセラミック板１２の厚さを所望の厚さにする。その
後、基板載置部１０とセラミック板１２との間に介在す
る低温ロウ付け材料１４の露出部分１４Ａにポリイミド
樹脂から成る合成樹脂２２を塗布し、次いで熱処理する
ことによって合成樹脂２２を硬化させる。これによっ
て、低温ロウ付け材料１４の露出部分１４Ａが合成樹脂
２２で被覆される。In the electrostatic chuck according to the second embodiment, after the ceramic plate 12 is bonded to the surface of the substrate mounting portion 10 made of metal also serving as an electrode by using a low-temperature brazing material 14 by a low-temperature brazing method. Then, the surface of the ceramic plate 12 is polished to a desired thickness. Thereafter, a synthetic resin 22 made of a polyimide resin is applied to an exposed portion 14A of the low-temperature brazing material 14 interposed between the substrate mounting portion 10 and the ceramic plate 12, and then the synthetic resin 22 is cured by heat treatment. As a result, the exposed portion 14A of the low-temperature brazing material 14 is covered with the synthetic resin 22.
【００４１】このように、低温ロウ付け材料１４の露出
部分１４Ａを合成樹脂２２で被覆することによって、ウ
エハ等の基板の処理時、低温ロウ付け材料１４からのス
パーク発生を効果的に防止することができる。As described above, by coating the exposed portion 14A of the low-temperature brazing material 14 with the synthetic resin 22, it is possible to effectively prevent spark from the low-temperature brazing material 14 during processing of a substrate such as a wafer. Can be.
【００４２】（実施例３）実施例３は、本発明の静電チ
ャック及びその作製方法を基板搬送装置に応用した例で
ある。図３の（Ａ）に模式的な一部断面図を示すよう
に、基板搬送装置は、搬送アーム２４から構成されてい
る。搬送アーム２４はアルミニウムやステンレススチー
ル等の金属から成り、その先端部は電極を兼ねた基板載
置部１０となっている。基板載置部１０の表面に低温ロ
ウ付け材料１４にてセラミック板１２が接着されてい
る。必要に応じて、図３の（Ｂ）に示すように、実施例
２と同様に、低温ロウ付け材料１４の露出部分１４Ａを
合成樹脂２２で被覆することができる。(Embodiment 3) Embodiment 3 is an example in which the electrostatic chuck of the present invention and its manufacturing method are applied to a substrate transfer apparatus. As shown in a schematic partial cross-sectional view of FIG. 3A, the substrate transfer device includes a transfer arm 24. The transfer arm 24 is made of a metal such as aluminum or stainless steel, and has a tip portion serving as the substrate mounting portion 10 also serving as an electrode. The ceramic plate 12 is adhered to the surface of the substrate mounting portion 10 with a low-temperature brazing material 14. If necessary, as shown in FIG. 3B, the exposed portion 14A of the low-temperature brazing material 14 can be covered with the synthetic resin 22, similarly to the second embodiment.
【００４３】実施例３の静電チャックは、実施例１及び
実施例２と同様の方法で作製することができる。また、
実施例３の静電チャックの操作も実施例１と同様とする
ことができる。The electrostatic chuck of the third embodiment can be manufactured by the same method as in the first and second embodiments. Also,
The operation of the electrostatic chuck of the third embodiment can be the same as that of the first embodiment.
【００４４】以上、本発明を好ましい実施例に基づき説
明したが、本発明はこれらの実施例に限定されるもので
はない。実施例にて説明した材料、各種数値等は例示で
あり、適宜変更することができる。Although the present invention has been described based on the preferred embodiments, the present invention is not limited to these embodiments. The materials, various numerical values, and the like described in the examples are examples, and can be changed as appropriate.
【００４５】例えば、本発明の静電チャックの作製方法
の好ましい態様における低温ロウ付け材料の露出部分の
合成樹脂による被覆を、セラミック板の研磨前に行うこ
とができる。For example, the coating of the exposed portion of the low-temperature brazing material with a synthetic resin in a preferred embodiment of the method for manufacturing an electrostatic chuck according to the present invention can be performed before polishing the ceramic plate.
【００４６】また、例えば、本発明の静電チャックの作
製方法の好ましい態様を前述した第２の形式の静電チャ
ックの作製方法に応用することができる。即ち、静電チ
ャック用電極を２枚のセラミック板に挟んでセラミック
板を燃結させて静電チャックを作製した後、ステージ電
極を兼ねた金属から成る基板載置部の表面に静電チャッ
クを構成するセラミック板を低温ロウ付け材料を用いて
低温ロウ付け法にて接着させる。次に、セラミック板の
表面を研磨してセラミック板の厚さを所望の厚さにす
る。その後、基板載置部とセラミック板との間に介在す
る低温ロウ付け材料の露出部分を合成樹脂で被覆する。Further, for example, a preferred embodiment of the method for manufacturing an electrostatic chuck of the present invention can be applied to the above-described method for manufacturing an electrostatic chuck of the second type. That is, after the electrode for electrostatic chuck is sandwiched between two ceramic plates and the ceramic plate is fired to produce an electrostatic chuck, the electrostatic chuck is attached to the surface of the substrate mounting portion made of metal also serving as a stage electrode. The ceramic plate to be constituted is bonded by a low-temperature brazing method using a low-temperature brazing material. Next, the surface of the ceramic plate is polished to a desired thickness. Thereafter, the exposed portion of the low-temperature brazing material interposed between the substrate mounting portion and the ceramic plate is covered with a synthetic resin.
【００４７】[0047]
【発明の効果】本発明においては、低温ロウ付け法によ
ってセラミック板が基板載置部に強固に接着されている
ので、真空特性に優れ、セラミック板を薄く加工でき、
しかも表面平滑性に優れている。それ故、本発明の静電
チャックは高い吸引・固定力を得ることができる。ま
た、表面がセラミック板で構成されているので、耐摩耗
性、耐熱性、耐プラズマ性、絶縁特性に優れる。また、
窒化アルミニウム等から成るセラミック板を使用すれ
ば、熱伝導率を比較的高くすることができる。低温ロウ
付けは３００゜Ｃ前後で行うことができるので、耐熱性
の高い材料から基板載置部を作製する必要がない。本発
明の基板処理装置あるいは基板搬送装置においては、静
電チャックの耐摩耗性、耐プラズマ性に優れているの
で、静電チャックの寿命が長く、ウエハ処理装置等の保
守回数を低減することができ、ランニングコストの低下
を図ることができる。According to the present invention, the ceramic plate is firmly adhered to the substrate mounting portion by the low-temperature brazing method, so that the ceramic plate has excellent vacuum characteristics and can be processed to be thin.
Moreover, it has excellent surface smoothness. Therefore, the electrostatic chuck of the present invention can obtain a high suction / fixing force. Further, since the surface is made of a ceramic plate, it has excellent wear resistance, heat resistance, plasma resistance, and insulation properties. Also,
If a ceramic plate made of aluminum nitride or the like is used, the thermal conductivity can be made relatively high. Since low-temperature brazing can be performed at about 300 ° C., it is not necessary to manufacture the substrate mounting portion from a material having high heat resistance. In the substrate processing apparatus or the substrate transfer apparatus of the present invention, since the electrostatic chuck has excellent wear resistance and plasma resistance, the life of the electrostatic chuck is long, and the number of times of maintenance of the wafer processing apparatus and the like can be reduced. As a result, the running cost can be reduced.
【図１】実施例１の静電チャックの模式的な断面図であ
る。FIG. 1 is a schematic sectional view of an electrostatic chuck according to a first embodiment.
【図２】実施例２の静電チャックの模式的な断面図であ
る。FIG. 2 is a schematic sectional view of an electrostatic chuck according to a second embodiment.
【図３】実施例３の静電チャックを備えた基板搬送装置
の模式的な断面図である。FIG. 3 is a schematic sectional view of a substrate transfer device provided with an electrostatic chuck according to a third embodiment.
【図４】従来の静電チャックの模式的な断面図である。FIG. 4 is a schematic sectional view of a conventional electrostatic chuck.
１０，３０，４６ 基板載置部 １２ セラミック板 １４ 低温ロウ付け材料 １４Ａ 低温ロウ付け材料１４の露出部分 １６ 加熱ヒーター １８，３６，４８ 冷媒流路 ２０ ガス供給口 ２２ 合成樹脂 ２４ 搬送アーム ３２ 絶縁材料 ３４ 接合材 ４０ 第２の形式の静電チャック ４２ 基体 ４４ 静電チャック用電極 10, 30, 46 Substrate mounting portion 12 Ceramic plate 14 Low-temperature brazing material 14A Exposed portion of low-temperature brazing material 14 Heater 18, 36, 48 Refrigerant flow path 20 Gas supply port 22 Synthetic resin 24 Transfer arm 32 Insulating material 34 bonding material 40 second type electrostatic chuck 42 substrate 44 electrode for electrostatic chuck
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/265 ６０３ Ｈ０１Ｌ 21/302 Ｂ 21/3065 21/30 ５０３Ｃ (56)参考文献 特開 平６−45284（ＪＰ，Ａ) 特開 平４−367247（ＪＰ，Ａ) 特開 昭62−263895（ＪＰ，Ａ) 特開 平４−363052（ＪＰ，Ａ) 特開 平３−188645（ＪＰ，Ａ) 特開 平５−206254（ＪＰ，Ａ) 実開 平４−89527（ＪＰ，Ｕ) 実開 平４−133443（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/68 H01L 21/027 H01L 21/205 H01L 21/265 H01L 21/3065 H02N 13/00 Continuation of the front page (51) Int.Cl. 7 Identification symbol FI H01L 21/265 603 H01L 21/302 B 21/3065 21/30 503C (56) References JP-A-6-45284 (JP, A) JP JP-A-4-367247 (JP, A) JP-A-62-263895 (JP, A) JP-A-4-363052 (JP, A) JP-A-3-188645 (JP, A) JP-A-5-206254 (JP) , A) Japanese Utility Model Application Hei 4-89527 (JP, U) Japanese Utility Model Application Hei 4-133443 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/68 H01L 21/027 H01L 21/205 H01L 21/265 H01L 21/3065 H02N 13/00
Claims (5)
基板載置部、及び、該基板載置部の表面に低温ロウ付け
材料にて接着されたセラミック板から成る静電チャック
であって、 基板載置部とセラミック板との間に介在する低温ロウ付
け材料の露出部分を合成樹脂で被覆したことを特徴とす
る静電チャック。1. An electrostatic chuck comprising a substrate mounting portion made of metal also serving as an electrode for an electrostatic chuck, and a ceramic plate bonded to a surface of the substrate mounting portion with a low-temperature brazing material. An electrostatic chuck wherein an exposed portion of a low-temperature brazing material interposed between a substrate mounting portion and a ceramic plate is coated with a synthetic resin.
基板載置部の表面にセラミック板を低温ロウ付け材料を
用いて低温ロウ付け法にて接着させた後、セラミック板
の表面を研磨してセラミック板の厚さを所望の厚さにす
ることを特徴とする静電チャックの作製方法。2. A ceramic plate is adhered to a surface of a substrate mounting portion made of metal also serving as an electrode for an electrostatic chuck by a low-temperature brazing method using a low-temperature brazing material, and then the surface of the ceramic plate is polished. A method for producing an electrostatic chuck, wherein the thickness of the ceramic plate is adjusted to a desired thickness.
る低温ロウ付け材料の露出部分を合成樹脂で被覆する工
程を更に含むことを特徴とする請求項２に記載の静電チ
ャックの作製方法。3. The electrostatic chuck according to claim 2, further comprising a step of coating an exposed portion of the low-temperature brazing material interposed between the substrate mounting portion and the ceramic plate with a synthetic resin. Production method.
基板載置部、及び、該基板載置部の表面に低温ロウ付け
材料にて接着されたセラミック板から成り、基板載置部
とセラミック板との間に介在する低温ロウ付け材料の露
出部分を合成樹脂で被覆した静電チャックを備えている
ことを特徴とする基板処理装置。4. A substrate mounting portion made of metal also serving as an electrode for an electrostatic chuck, and a ceramic plate bonded to a surface of the substrate mounting portion with a low-temperature brazing material. A substrate processing apparatus comprising: an electrostatic chuck in which an exposed portion of a low-temperature brazing material interposed between a ceramic plate and a ceramic plate is coated with a synthetic resin.
基板載置部、及び、該基板載置部の表面に低温ロウ付け
材料にて接着されたセラミック板から成り、基板載置部
とセラミック板との間に介在する低温ロウ付け材料の露
出部分を合成樹脂で被覆した静電チャックを備えている
ことを特徴とする基板搬送装置。5. A substrate mounting portion made of metal also serving as an electrode for an electrostatic chuck, and a ceramic plate bonded to a surface of the substrate mounting portion with a low-temperature brazing material. A substrate transport device comprising an electrostatic chuck in which an exposed portion of a low-temperature brazing material interposed between the ceramic plate and a ceramic plate is coated with a synthetic resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01946293A JP3271352B2 (en) | 1993-01-13 | 1993-01-13 | Electrostatic chuck, method of manufacturing the same, substrate processing apparatus, and substrate transfer apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01946293A JP3271352B2 (en) | 1993-01-13 | 1993-01-13 | Electrostatic chuck, method of manufacturing the same, substrate processing apparatus, and substrate transfer apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06216224A JPH06216224A (en) | 1994-08-05 |
| JP3271352B2 true JP3271352B2 (en) | 2002-04-02 |
Family
ID=11999997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01946293A Expired - Fee Related JP3271352B2 (en) | 1993-01-13 | 1993-01-13 | Electrostatic chuck, method of manufacturing the same, substrate processing apparatus, and substrate transfer apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3271352B2 (en) |
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| JPH1064985A (en) * | 1996-08-23 | 1998-03-06 | Sony Corp | Water stage, temperature adjustment method for wafer and dry etching device |
| KR100290264B1 (en) * | 1997-01-22 | 2001-09-22 | 호소이 쇼지로 | Electrostatic chuck and its manufacturing method |
| JP2001297971A (en) * | 2000-04-14 | 2001-10-26 | Ulvac Japan Ltd | Aligner |
| JP2002203893A (en) * | 2000-10-23 | 2002-07-19 | National Institute Of Advanced Industrial & Technology | Electrostatic chuck |
| JP4094262B2 (en) | 2001-09-13 | 2008-06-04 | 住友大阪セメント株式会社 | Adsorption fixing device and manufacturing method thereof |
| FR2850790B1 (en) * | 2003-02-05 | 2005-04-08 | Semco Engineering Sa | ELECTROSTATIC COLLAGE SOLE WITH RADIO FREQUENCY ELECTRODE AND INTEGRATED THERMOSTATIC MEANS |
| JP4762064B2 (en) * | 2005-07-04 | 2011-08-31 | 京セラ株式会社 | Bonded body, wafer support member using the same, and wafer processing method |
| JP2007043042A (en) * | 2005-07-07 | 2007-02-15 | Sumitomo Electric Ind Ltd | Wafer holder and manufacturing method thereof, wafer prober mounting same, and semiconductor heating device |
| JP2006253703A (en) * | 2006-04-07 | 2006-09-21 | Toto Ltd | Electrostatic chuck and insulating substrate electrostatic attraction treatment method |
| JP4936877B2 (en) * | 2006-12-25 | 2012-05-23 | 京セラ株式会社 | Bonded body, wafer support member using the same, and wafer processing method |
| JP4974873B2 (en) * | 2007-12-26 | 2012-07-11 | 新光電気工業株式会社 | Electrostatic chuck and substrate temperature control fixing device |
| JP4929150B2 (en) * | 2007-12-27 | 2012-05-09 | 新光電気工業株式会社 | Electrostatic chuck and substrate temperature control fixing device |
| JP2009033204A (en) * | 2008-10-29 | 2009-02-12 | Sumco Corp | Method for plasma-etching semiconductor wafer |
| US9224626B2 (en) | 2012-07-03 | 2015-12-29 | Watlow Electric Manufacturing Company | Composite substrate for layered heaters |
| US9916998B2 (en) | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
| US9669653B2 (en) | 2013-03-14 | 2017-06-06 | Applied Materials, Inc. | Electrostatic chuck refurbishment |
| US9666466B2 (en) | 2013-05-07 | 2017-05-30 | Applied Materials, Inc. | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
| US10020218B2 (en) | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
| TWI791590B (en) * | 2017-08-14 | 2023-02-11 | 美商瓦特隆電子製造公司 | Method for joining quartz pieces and quartz electrodes and other devices of joined quartz |
-
1993
- 1993-01-13 JP JP01946293A patent/JP3271352B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06216224A (en) | 1994-08-05 |
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