TWI271813B - Apparatus for manufacturing a semiconductor device - Google Patents

Apparatus for manufacturing a semiconductor device Download PDF

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Publication number
TWI271813B
TWI271813B TW91109647A TW91109647A TWI271813B TW I271813 B TWI271813 B TW I271813B TW 91109647 A TW91109647 A TW 91109647A TW 91109647 A TW91109647 A TW 91109647A TW I271813 B TWI271813 B TW I271813B
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TW
Taiwan
Prior art keywords
semiconductor device
lifting
suspension
manufacturing
chamber
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TW91109647A
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Chinese (zh)
Inventor
Sang-Gee Park
Ki-Young Oh
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Jusung Eng Co Ltd
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Priority to TW91109647A priority Critical patent/TWI271813B/en
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Publication of TWI271813B publication Critical patent/TWI271813B/en

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Abstract

An apparatus for manufacturing a semiconductor device according to the present invention includes a chamber having a gate valve and an outlet, a susceptor within the chamber to hold a wafer thereon, being movable upward and downward, and having a plurality of lift pin holes, wherein each lift pin hole has a hanging part at the upper end, and a plurality of lift pins passing through the plurality of lift pin holes, wherein each lift pin has a hung part at the upper end and a length of the lift pin being longer than that of the lift pin hole, and the upper diameter of the hung part is shorter than the upper diameter of the hanging part and is longer than the lower diameter of the hanging part.

Description

1271813 五、發明說明(1) 【發明背景】 本發明係關於一種半導體裝置之製造設備;特別是關 於一種包括一升降針部的設備,用以裝載待處理基板在容 室内部。 之描述 新材料的開發已活躍地進行著’且由於新材料開發的 快速成長而開發出多種的大型積體電路(LSI ),例如超 大槊積體電路(ULSI )。亦即,因為用以形成薄膜(例如 構成半導體裝置的絕緣層、半導體層、及導體層)'的新材 料在此領域中已被廣泛地開發,故目前存在有大型積體電 路(LSI ),例如超大型積體(ULSI )電路。半導體裝置 通常係以重覆的沈積及圖案化程序所製造。此等程序係在 半導體裝置的製造設備中於真空條件下完成。 半導體裝置的製造設備依照用途分類為很多種類。直 設備通常包括:一處理容室,其係一氣密反應容器;一控 制器,其控制容室内部的環境;及一氣體供應系統,其儲 存來源氣體並提供該來源氣體。 圖1及2顯不習用半導體裝置之製造設備。圖丨係顯示 裝載或卸載晶圓之狀態的圖,而圖2係顯示程序之狀態的 圖。在圖1及2中,此設備包括處理容室}、檯部8、及氣體 庄入器6。處理容室1具有閘閥2及出口 4,而容室1的頂部 係半球形。待處理晶圓經由閘閥2進入及移出處理容室1, 該閘閥2係形成在處理容室1的壁部上。在處理容室丨内部BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing apparatus of a semiconductor device; and more particularly to an apparatus including a lifting needle portion for loading a substrate to be processed inside a chamber. Description The development of new materials has been actively carried out and a variety of large integrated circuits (LSIs) have been developed due to the rapid growth of new materials, such as ultra-wide snubber circuits (ULSI). That is, since a new material for forming a thin film (for example, an insulating layer, a semiconductor layer, and a conductor layer constituting a semiconductor device) has been widely developed in the field, there is currently a large integrated circuit (LSI). For example, a very large integrated body (ULSI) circuit. Semiconductor devices are typically fabricated by repeated deposition and patterning procedures. These procedures are performed under vacuum conditions in the manufacturing equipment of the semiconductor device. Manufacturing equipment for semiconductor devices is classified into many types according to the use. The straight apparatus generally includes: a processing chamber which is an airtight reaction vessel; a controller that controls the environment inside the chamber; and a gas supply system that stores the source gas and supplies the source gas. 1 and 2 show a manufacturing apparatus for a semiconductor device. The figure shows the state of loading or unloading the wafer, and Figure 2 shows the state of the program. In Figures 1 and 2, the apparatus includes a processing chamber, a table 8, and a gas entrant 6. The processing chamber 1 has a gate valve 2 and an outlet 4, and the top of the chamber 1 is hemispherical. The wafer to be processed enters and exits the processing chamber 1 via the gate valve 2, and the gate valve 2 is formed on the wall portion of the processing chamber 1. Inside the processing chamber

1271813 五、發明說明(2) =:氣經由出口 4排出至處理容室i之外。氣體注入器6, :係連接至處理容室i之外的氣體供.應系統(未圖示), 係配置在處理容室丨之内表面的頂部上。檯部8亦位在容室 1之内部’而晶圓5 〇係置於檯部8上。 檯部8包含晶座10、晶座驅動板1 7、升降針部基底 邱且if:針部驅動板19。晶座10係圓形板的形狀,且内 :圓50: ΐί1:,其用以供熱至晶圓50。因此,藉由加熱 5且有度加快並得到穩定的結果。而且,晶座1〇 並以第-垂直柱魏連接至晶 產駆動板17,其係置於處理容 座驢動 以馬達「Μ」所驅動,且田人之卜日日座驅動板1 7係 一垂直柱體18a通過升降2向上及向下移動晶座10。第 之下。 降針邛基底1 5,其係配置在晶座i 〇 升降針部基底1 5且古、 複數升降針孔丨2二升复數升降針部13,其通過其上的 連接至升降針部驅動板/邛基底15係以第二垂直柱體1 8b 圓筒「P」所驅動。第—,其係以處理容室1之外的空氣 1 7。因此,複數升降垂直柱體1 8 b係行進至晶座驅動板 地升起及下降的移動。"13藉由空氣圓筒「P」產生垂直 楼部8的詳細構造 應到圖1之容室1的底侧'。”、員不在圖3中。圖3的線「A〜a」對 1 2的晶座1 〇係以通過升。如圖3所示,具有複數升降針孔、 連接至晶座驅動板丨7,降針部基底1 5的第一垂直柱體j 8 「M」。在晶座1 〇下方晶座驅動板1 7係連接至馬達 ----- —卜 V 升降針部基底1 5具有複數升降針1271813 V. INSTRUCTIONS (2) =: Gas is discharged to the outside of the processing chamber i via the outlet 4. The gas injector 6, is connected to a gas supply system (not shown) other than the processing chamber i, and is disposed on the top of the inner surface of the processing chamber. The table portion 8 is also located inside the chamber 1 and the wafer 5 is placed on the table portion 8. The stage portion 8 includes a crystal holder 10, a crystal pad driving plate 17 and a lifting needle portion base and an if: needle driving plate 19. The crystal holder 10 is in the shape of a circular plate, and inside: a circle 50: ΐί1: which is used to supply heat to the wafer 50. Therefore, by heating 5 and speeding up and obtaining a stable result. Moreover, the crystal holder is connected to the crystal growth plate 17 by the first vertical column, which is driven by the motor to be driven by the motor "Μ", and the Tianren's day seat drive plate 17 A vertical cylinder 18a is moved up and down by the lift 2 to move the base 10. Below. The needle lowering base 15 is disposed on the base of the crystal holder i 〇 lifting needle, and the ancient and plural lifting pinholes 二 2 two liters of the plurality of lifting needles 13 through which the lifting needle driving plate is connected The /base substrate 15 is driven by a second vertical cylinder 18b cylinder "P". First, it is to treat the air outside the chamber 1 17 . Therefore, the plurality of lifting vertical cylinders 18b travel to the lift and lower movement of the wafer drive plate. "13 The vertical structure of the vertical floor portion 8 is generated by the air cylinder "P" to the bottom side of the chamber 1 of Fig. 1. "The member is not in Fig. 3. The line "A~a" in Fig. 3 is connected to the crystal holder 1 of 1 2 to pass through. As shown in FIG. 3, the first vertical cylinder j 8 "M" having a plurality of lifting pin holes, connected to the base driving plate 7 and the needle lowering base 15 is shown. Under the crystal holder 1 晶, the crystal driver board 17 is connected to the motor ----- Bu V lifting needle base 1 5 has a plurality of lifting needles

1^^ I2?1813 五、發明說明(3) 升降針ί 3 :lH f18b連接至晶座驅動板1 7下方的 「 f σ卩驅動板19。升降針部驅動板19係連接至* 」,且因此升降針部驅動板19藉由 s 動。複數升降針部U通過複數升降針孔圓濟「P」而移 氣I* ΐ ΐ所述’容室1的上方係半球形,其係能夠將來源 =處理容室!内部的分散效果最大化 == 曰圓5°。藉此,接近閉閥2的區域靈敏;Γ,θί —方^ Γ ί 溫度及麼力#條件可以容易地改變。另 閥2之上理谷室1内部的第一區域2Ga,其係配置在閘 ^2之上,具有比第一區域2〇&下之第二區域2心释在巧 Ϊ完:此’期望沈積薄膜及將之圖案化係在第-區輸 ^ ^ « 5^0 J I ; ® 5£〇 ^ ^ ^ ^ 20a τ ^ . 座ίο上之曰部裝载及卸載至間間2,而晶 Ξ索朝向第一區域…移動。而且,沈積或 圖案化係在第一區域20a中完成。積飞 座ίο t叙右是藉由馬達「M」移動晶座驅動板17,則晶 ^ ^且若是藉由空氣圓筒「Ρ」移動升降針部驅 動板19,料降針部基底15上的升降針部13同時移動' 同時,在圖1及2中,形成第一摺箱21及第二摺 , 以5 r:止雜質穿透到處理容室1中,且第-摺箱21係配置 在容,1的底部及晶座驅動板17之間,而第二摺箱22係位 於晶座驅動板17及升降針部驅動板19之間。 ” 首先,在圖1的設備中,藉由馬達「Μ」將晶座丨0及晶 12718131^^ I2?1813 V. Invention Description (3) Lifting pin ί 3 : lH f18b is connected to the "f σ卩 driver board 19 below the crystal driver board 1 7. The lifting needle driver board 19 is connected to *", Therefore, the lifting needle driving plate 19 is moved by s. The plurality of lifting needles U pass through a plurality of lifting pinholes to "P" and to move the air I* ΐ ΐ the upper portion of the chamber 1 is hemispherical, which is capable of maximizing the dispersion of the source = processing chamber! == 曰 round 5°. Thereby, the area close to the valve closing 2 is sensitive; Γ, θί - square ^ Γ ί temperature and の force # conditions can be easily changed. In addition, the first region 2Ga inside the valley chamber 1 is disposed on the gate 2, and has a second region 2 than the first region 2〇& It is desirable to deposit and pattern the film in the first region to load and unload to the inter-section 2, while the ί 上 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The crystal sling moves toward the first area... Moreover, deposition or patterning is done in the first region 20a. The flywheel ίο t 右 right is to move the crystal driver board 17 by the motor "M", and if the air cylinder "Ρ" moves the lifting needle driving plate 19, the needle lowering base 15 is The lifting needle portion 13 is simultaneously moved'. Meanwhile, in FIGS. 1 and 2, the first folding box 21 and the second folding portion are formed, and 5 r: the impurity is penetrated into the processing chamber 1, and the first folding box 21 is disposed at The bottom of the case 1 is between the base plate driving plate 17, and the second folding box 22 is located between the base pad driving plate 17 and the lifting pin driving plate 19. First, in the device of Figure 1, the crystal holder is 丨0 and crystal 1271813 by the motor "Μ"

五、發明說明(4) 3:=反17置於第二區域2〇b中,且藉由空氣圓胃「p」將 降針邻二ίί 15 ί之複數升降針部13升起。因此,複數升 曰#犬出至晶座1〇之上的複數升降針孔12。而且,將 曰曰圓5 0放置在複數弁p^ m π Γρ你々私L升降針#13上。之後,藉由空氣圓筒 上。」t升降針部13下降,並將晶圓50裝載在晶座1〇 把動^ nr ^圖2所不’藉由馬達「M」使晶座1 G隨著晶座 下降’且將晶座1〇置 中 軋體注入器6的來源氣體吁λ不,够广 T 肝木目 膜沈積在晶圓50上Λ 弟一區域心中,因而將薄 後,使具有晶圓50於===上的薄膜圖案化。之V. INSTRUCTION OF THE INVENTION (4) 3: The reverse 17 is placed in the second region 2〇b, and the plurality of lifting needle portions 13 of the lowering needle ίί 15 ί are raised by the air round stomach "p". Therefore, the plurality of 曰# dogs are out of the plurality of lifting pinholes 12 above the pedestal 1 。. Moreover, the round circle 50 is placed on the complex 弁p^m π Γρ you 々L lift needle #13. After that, by the air cylinder. t) The lifting needle portion 13 is lowered, and the wafer 50 is loaded on the crystal holder 1 〇 ^ r 图 图 图 图 图 图 图 图 图 图 图 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达 马达1 The source gas of the medium-rolling body injector 6 is not λ, and the wide T-hepatic film is deposited on the wafer 50 in the center of the region, and thus will be thinned so that the wafer 50 is on the === Film patterning. It

域咖中。複數升降針部t3的Λ廿1下降,並放置於第二區 「λ 丄J向上並升晶座10之卜64曰HI 50。從㈣2將晶圓50從處理容室十取出。上的日日固 由於習用處理宏舍目士 空氣圓筒「p」所驅動的升牛針部基底15,其包括藉由 因此,控制容室=針部13 ’故容室1尺寸增大。 置的可靠度下降。二的用皿/及上力是困難的,且因此裝 而且,當升降針部13^二理谷室1 + ’容易產生雜質。 由於馬達「M」及空氣Ύρ必需將檯部8全部拆卸,且 、固疴ρ」而使得設備之成本變高。 【發明概要】 因此,本^ 實質上消除由於習知姑二種半導體裝置的製造設備,其 多問題。 技術的限制及缺點所造成的一個或更 1271813 五、發明說明(5) j: M ^ ^,的一優點為提供一種半導體裝置的製造設備, 具構造間早且尺寸小。 說明:::Γ明本發明的其它特徵及優點,其-部分將從 目的及盆,或可以藉由實施本發明而獲悉。本發明的 二以可藉由附胃、更可藉由所述之說明 申明專利靶圍所提出之構造而實現並達成。 如各實施例及概括之說明,為 達成此等及及其它優點,一半導體 :t明之用途而 具有-閘閥及一出口的一容之製造設備包括: 用/將一晶圓載持在其上,並可向H 2部的一晶座,其 J數之升降針孔,其中各升降針孔於二::且具有 4,而複數升降針部穿過該複數升降而具有一懸吊支撐 部於頂端具有一懸吊支撐部,且升降.其中各升降針 升降針孔的一長度,且懸吊支撐部的上一長度係太於 支撐部的上直徑、並長於懸吊支撐部直徑係較小於懸吊 ^ 吾人應了解上述之一般說明及下述下直徑。 範性及說明性,且意欲提供本發明的^之詳細說明係為示 〜步說明。 【較佳實施例之詳細說明】 以下參見附圖詳細說明本發明的實A 圖4顯示依照本發明之半導體裝置、知例。 此’與圖1及2之習用設備相同的元<件的製造設備。在 同符號表示。在圖4中,設備包含處理及2中使用的相 體注入器6'及馬達「M」。處理容室丨^室丨、檯部8、氣Domain coffee. The Λ廿1 of the plurality of lifting needles t3 is lowered, and placed in the second zone "λ 丄 J upwards and raised by the pedestal 10 曰 HI 50. From the (four) 2, the wafer 50 is taken out from the processing chamber ten. The Japanese solid-state needle base 15 is driven by the conventional handling of the Acer air cylinder "p", which includes the control chamber = the needle portion 13' so that the size of the chamber 1 is increased. The reliability of the placement is reduced. The dish/loading force of the second is difficult, and therefore, the lifting needle portion 13^the second chamber 1 + ' is liable to generate impurities. Since the motor "M" and the air Ύρ must be completely detached from the table portion 8, the cost of the device becomes high. SUMMARY OF THE INVENTION Therefore, the present invention substantially eliminates many problems due to the manufacturing equipment of the conventional semiconductor devices. One or more of the limitations and disadvantages of the technology, or an advantage of the invention (5) j: M ^ ^, is to provide a manufacturing apparatus of a semiconductor device having an early structure and a small size. BRIEF DESCRIPTION OF THE DRAWINGS Other characteristics and advantages of the present invention will be apparent from the point of view and the scope of the invention. The second aspect of the present invention can be realized and achieved by the appendage of the stomach and the structure proposed by the patented target. To achieve these and other advantages, a manufacturing device having a gate valve and an outlet for use in a semiconductor application includes: using/holding a wafer thereon, And a crystal holder of the H 2 portion, the J-number lifting pinhole, wherein each lifting pinhole is at two:: and has 4, and the plurality of lifting needles pass through the plurality of lifting and lowering and have a hanging support portion The top end has a suspension support portion and is raised and lowered. Each of the lifting pins lifts a length of the pinhole, and the upper length of the suspension support portion is too larger than the upper diameter of the support portion and smaller than the diameter of the suspension support portion. Suspension ^ We should be aware of the general description above and the lower diameter below. The detailed description of the present invention is intended to be illustrative and illustrative. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor device of the present invention will be described in detail with reference to the accompanying drawings. FIG. 4 shows a semiconductor device according to the present invention. This is the same manufacturing device as the conventional device of Figs. 1 and 2. Expressed in the same symbol. In Fig. 4, the apparatus includes a phase injector 6' and a motor "M" used in the process. Handling chamber 丨^ room 丨, 台台8, gas

匕括閘閥2及出Q 第10頁 1271813 五、發明說明(6) 4 處理备至1的頂部係半球形。閘閥2係形成在處理容室1 的壁邰,待處理晶圓經通道從閘閥2進入及移出容 口 4連接至抽哄各从/丄 ® 介汽好徂姓南統(未圖示)’以排出處理容室1内部的 工米/、寺处理容室1的内部壓力。氣體注入器6,1係連 接至外部的氣體供應系统(未圖示),係配置在處理容室 内面的了頁。卩上。檯部8包括晶座1 〇及晶座驅動板1 7。 晶座10係位在處理容幻内部並載持晶圓5Q於其上。晶座 1 〇 cl邻〔、有供熱至晶圓5 〇的加熱器11,並具有複數升降針 、=幻曰]稷数升降針孔62。另一方面,晶座1〇連接至由 馬達Μ」所控制的晶座驅動板丨7,其係置於處理容室丄之 ^因此’藉由馬達「M」使晶座10向上及向下移動。摺 箱21使處理谷至1呈氣密,係位在理之 驅動板17之間。 ^ 如上所述,對晶圓5〇之程序係在處理容室丨内部之第 一區域2 0 a、閘閥2之卜66 μ加厂、· # s 4 + &的卩區域中進行,而晶圓50的裝 載及卸載係在處理容室1内部之第二區域20b、第-區域 20a之下部區域中完成。 -以下參見圖5A及5B詳細說明本發明的設備。圖5A及⑽ 顯不依照本發明之晶座及升降針部的構造^在㈣㈣ 中,線「A-A」表示圖4之處理容^的底部。如上所述, 晶座10具有複數升降針孔62。各升降針孔62具有懸吊支撐 部62a於升降針孔62的頂端。通過各升降針孔“的各升降 針部60具有懸吊部60a於升降針部6〇的頂端。懸吊部,的 上直徑短於懸吊支撐部62a的上直徑、而長於懸吊支撐部匕 闸 gate valve 2 and output Q Page 10 1271813 V. Description of invention (6) 4 The top of the preparation to 1 is hemispherical. The gate valve 2 is formed in the wall of the processing chamber 1. The wafer to be processed enters and exits the port 4 through the channel from the gate valve 2 and is connected to the pumping port. Each of the slaves/丄® is in the south (not shown). The internal pressure of the working chamber 1 and the temple processing chamber 1 inside the processing chamber 1 is discharged. The gas injectors 6, 1 are connected to an external gas supply system (not shown), and are disposed on the inner surface of the processing chamber.卩上. The stage 8 includes a base 1 and a base drive plate 17. The crystal holder 10 is positioned inside the process interior and carries the wafer 5Q thereon. The crystal holder 1 〇 cl is adjacent to the heater 11 having a heat supply to the wafer 5, and has a plurality of lifting pins and a phantom pin. On the other hand, the crystal holder 1 is connected to the crystal driver board 7 controlled by the motor, which is placed in the processing chamber, so that the crystal holder 10 is up and down by the motor "M". mobile. The folding box 21 makes the processing valley 1 airtight and is positioned between the driving plates 17. ^ As described above, the process of wafer 5 is performed in the first region of the processing chamber 2 20 a, the gate valve 2, the 66 μ plus plant, the # s 4 + & The loading and unloading of the wafer 50 is completed in the second region 20b inside the processing chamber 1 and in the lower region of the first region 20a. - The apparatus of the present invention will be described in detail below with reference to Figs. 5A and 5B. 5A and (10) show the construction of the crystal holder and the lifting needle portion according to the present invention. In (4) and (4), the line "A-A" indicates the bottom of the processing capacity of Fig. 4. As described above, the crystal holder 10 has a plurality of lifting pinholes 62. Each of the lifting pinholes 62 has a hanging support portion 62a at the top end of the lifting pinhole 62. Each of the lifting and lowering needle portions 60 passing through the respective lifting pinholes has a hanging portion 60a at the distal end of the lifting needle portion 6A. The upper diameter of the hanging portion is shorter than the upper diameter of the hanging support portion 62a and longer than the hanging support portion.

12718131271813

62a的下直徑,俾能於晶座1〇位於在圖义之第一 二使懸吊部60a懸吊在t吊支撐部—上^^ J度係長於升降針孔62的長度,俾能於晶座条十圖了的 弟,區域20b的最低區時,使升降針部6。能夠突出至= ^。升降針部60的下部料行進到懸吊支撐部62a及升 ,針孔62的下部,且因此當晶座1〇係位於在圖彳的第一區 二2〇a中時,懸吊部6〇a係懸吊在懸吊支撐部…上。懸吊 ^撐部62a及懸吊部6Ga係如圖5A所示之漏斗狀、或如圖㈤ =不之圓筒狀。在此,期望懸吊支撐部62a具有較懸吊部 a立咼的南度,以便當程序進行時使懸吊部6〇&置於懸吊支 芽部62a上。因此’在此情況下圖4的晶圓5〇僅位於晶座ι〇 上。 牲立另一方面,支持部6 1可與升降針部6 〇的下端結合。支 、部61防止當晶座丨〇係位於在圖4的第二區域2〇]3中時,升 ,,部60由於與升降針部6〇之下端及圖4之處理容室〗的底 2「A-A」接觸所造成的損害。支持部6丨可藉由螺紋組件 ^升降針部60的下端結合。此時,升降針部6〇的下端可為 夕螺紋構件’而支持部6 1可為内螺紋構件。 大 由於此設備具有簡單構造,故可以縮小設備的尺寸。 此’可以周密地控制處理容室内部的條件,而且產生不 良品的程度下降。設備的成本亦下降。 ^ 圖6A及6B顯示依照本發明之設備的驅動程序。首先, :,6 A所示,藉由圖4的馬達「Μ」使晶座1 〇向下接近處理 奋室1的底部「A-A」。接著,通過晶座1〇内之升降針孔62The lower diameter of 62a, the 俾 can be placed on the crystal seat 1〇 in the first two of the figure, the suspension portion 60a is suspended on the t-hanging support portion - the length of the J-degree system is longer than the length of the lifting pinhole 62, When the crystal seat strip 10 is shown, the lower part of the area 20b is lifted and the needle portion 6 is lifted. Can stand out to = ^. The lower portion of the lifting needle portion 60 travels to the suspension support portion 62a and the lower portion of the needle hole 62, and thus the suspension portion 6 is when the crystal holder 1 is positioned in the first region 2二a of the figure. 〇a is suspended on the suspension support. The suspension portion 62a and the suspension portion 6Ga are funnel-shaped as shown in Fig. 5A or cylindrical as shown in Fig. 5 (not shown). Here, it is desirable that the suspension support portion 62a has a southerness than the suspension portion a so that the suspension portion 6〇& is placed on the suspension branch portion 62a when the procedure is performed. Therefore, in this case, the wafer 5 of FIG. 4 is only located on the crystal plaque. On the other hand, the support portion 61 can be coupled to the lower end of the lifting needle portion 6A. The branch portion 61 prevents the base portion 60 from rising when the crystal holder tether is located in the second region 2〇]3 of FIG. 4, and the portion 60 is at the bottom of the lower portion of the lifting needle portion 6 and the bottom of the processing chamber of FIG. 2 "AA" contact damage caused. The support portion 6 can be coupled by the lower end of the screw assembly. At this time, the lower end of the elevating needle portion 6A may be an in-situ screw member', and the support portion 61 may be an internally threaded member. Large Due to the simple construction of this device, the size of the device can be reduced. This can be used to carefully control the conditions inside the processing chamber, and the degree of defective products is reduced. The cost of equipment has also dropped. Figure 6A and 6B show the drivers for the device in accordance with the present invention. First, as shown in :6 A, the crystal holder 1 〇 is brought down to the bottom "A-A" of the processing chamber 1 by the motor "Μ" of Fig. 4. Then, through the lifting pinhole 62 in the base 1

1271813 五、發明說明(8) 降針部⑽接觸處理容室“勺底部^ — ^’且升降針部 D U 4吏晶庙η空山 ψ ^ , 出。之後,從圖4的閘閥2將晶圓50擺放在突 出之升降針部6 〇上。 動。:ί Ϊ *圖6β所示,藉由馬達「M」將晶座10向上移 置於在:4的升第降一針區部^ ^ 或蝕刻程序。 日日座1 ϋ上,並70成沈積 之後’如圖6 a所示,蕤由民、去 其上的晶座1〇下降,並置「M」使具有晶圓5〇於 「A-A」。此時,升降6接近處理容室1的底部 Γ Λ A 十口P60接觸處理究玄1 ΛΑ产如 Α-Α」,並使晶座1〇突出。 的底邛 圓5 0上升,且從圖4的閘\此藉由升降針部60使晶 以上所述者,僅為^用2;晶圓5 0從處理*室1取出。 例,而並非將本發明狹義^ 本發明之較佳實施 發明所做的任何變更,皆Β丄制於該車父佳實施例。凡依本 屬本發明申請專利之範圍。 1271813 圖式簡單說明 圖1及2係習用半導體裝置之製造設備的橫剖面圖; 圖3係包括晶座之習用檯部的爆炸示意圖; 圖4係依照本發明之半導體裝置之製造設備的橫剖面 圖; 圖5A及5B係顯示依照本發明之晶座及升降針部的構造 的橫剖面圖;與 圖6A及6B顯示依照本發明之設備的驅動程序。 【符號說明】 1 容室 10 晶座 11 加熱器 12 升降針孔 13 升降針部 15 升降針部基底 17 晶座驅動板 18a 第一垂直柱體 18b 第二垂直柱體 19 升降針部驅動板 2 閘閥 20a 第一區域 20b 第二區域 21 第一摺箱 22 第二摺箱1271813 V. INSTRUCTIONS (8) The needle drop (10) contacts the processing chamber "the bottom of the spoon ^ ^ ^ ' and the lifting needle DU 4 吏 庙 η 空 ψ , ^ , , , , , , , , , , , , , , , , , , , , , , , , , , , , 50 is placed on the protruding lifting needle 6 。. Moving.: ί Ϊ * As shown in Fig. 6β, the crystal holder 10 is moved up by the motor "M" to be placed at: 4 ^ or etching procedure. On the 1st floor of the sundial, and after 70% of the deposition, as shown in Fig. 6a, the slabs of the slabs and the slabs on the slabs are lowered by 1", and the "M" is placed so that the wafers 5 are attached to the "A-A". At this time, the lifting 6 is close to the bottom of the processing chamber 1 Γ Λ A Ten P60 is in contact with the processing of the Xuan 1 ΛΑ ΛΑ Α Α , , , , , , , , , , , , , , , , , , , The bottom 邛 circle 50 rises, and from the gate of Fig. 4, the crystal is lifted by the lifting needle portion 60. The above is only used for 2; the wafer 50 is taken out from the processing chamber 1. For example, the invention is not limited to the preferred embodiment of the invention. The scope of the patent application of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 and FIG. 2 are cross-sectional views showing a manufacturing apparatus of a conventional semiconductor device; FIG. 3 is a schematic exploded view of a conventional stage including a crystal holder; FIG. 4 is a cross section of a manufacturing apparatus of a semiconductor device according to the present invention. 5A and 5B are cross-sectional views showing the construction of a crystal holder and a lifting needle according to the present invention; and Figs. 6A and 6B show the driving procedure of the apparatus according to the present invention. [Description of symbols] 1 chamber 10 crystal seat 11 heater 12 lifting pinhole 13 lifting needle portion 15 lifting needle base 17 crystal holder driving plate 18a first vertical cylinder 18b second vertical cylinder 19 lifting needle driving plate 2 Gate valve 20a first region 20b second region 21 first bellows 22 second bellows

第14頁 1271813 圖式簡單說明 4 出曰 50 晶圓 6 氣體注入器 60 升降針部 6 0a 懸吊部 62 升降針孔 62a 懸吊支撐 8 檯部Page 14 1271813 Simple description of the model 4 Output 50 Wafer 6 Gas injector 60 Lifting needle 6 0a Suspension 62 Lifting pinhole 62a Suspension support 8 Countertop

1·· 第15頁1·· Page 15

Claims (1)

1271813 六、申請專利範圍 1 · 一種半導體 一容室, 一晶座, 晶座係可向上 針孔在頂端具 複數升降 在頂端具有一 針孔的長度, 直徑、並係長 2 ·依申請專利 該懸吊部具有 3 ·依申請專利 含一支持部, 請專利 部藉由 請專利 針部係 4. 依申 該支持 5. 依申 該升降 件。 6. 依申 該懸吊 7·依申 該懸吊 8.依申 該懸吊 裝置之製造設備,包含、: 其具有一閘閥及一出口; 在該容室内部,用以載持一晶圓於其上,該 及向下移動’並具有複數升降針孔,各升降 有一懸吊支撐部;與 針部’其通過該複數升降針孔,各升降針部 懸吊部’且該升降針部的長度係長於該升降 忒懸吊部的上直徑係短於該懸吊支撐部的上 t該懸吊支撐部的下直徑。 範圍第1項之半導體裝置之製造設備 t於該懸吊支撐部的高度。 員之半導體裝置之製造設備 範圍;^針部的下端結合。 一螺以員之半導體裝置之製造設僙 範圍第4纟且件與該升降針部的該下端為 -外G槿之半導體裝置之製造設襟 ’、、構件,而該支持部係/内嫘 其中 尚包 其中 舍 其中 之構 睛專利 支撐部 清專利 部係漏 凊專利 支撐部 範圍第1 β 係漏斗狀之半導體裝置之製造設僙 範圍第6 :® & . 斗狀。、半導體裝置之製造設構 範圍第1項> 且有 Π、半導體裝置之f造設僙 /、有—圓筒狀。 其中其中其中1271813 VI. Patent application scope 1 · A semiconductor-capacity chamber, a crystal seat, the crystal holder system can have a pinhole at the top end with a plurality of pinholes at the top end with a pinhole length, diameter, and length 2 The hanging part has 3 · According to the patent application, a support part is required, and the patent department is requested to apply for the patent. 4. According to the application, 5. Lifting parts according to the application. 6. According to the application of the suspension 7. The suspension of the suspension device 8. According to the manufacturing equipment of the suspension device, comprising: a gate valve and an outlet; inside the chamber, for holding a wafer And moving downwardly and having a plurality of lifting pinholes, each lifting has a hanging support portion; and the needle portion 'passing the plurality of lifting pin holes, each lifting needle portion hanging portion' and the lifting needle portion The length of the suspension is longer than the lower diameter of the suspension support on the upper diameter of the suspension support. The manufacturing apparatus of the semiconductor device of the first aspect is at the height of the suspension support. The manufacturing equipment of the semiconductor device of the member; the lower end of the needle portion is combined. The manufacturing device of the semiconductor device of the first component is the fourth device, and the lower end of the lifting pin portion is a manufacturing device of the semiconductor device of the external device, and the member is supported. Among them, there are still some of them, such as the patented support section, the patent department, the patented support section, the first β-system, the funnel-shaped semiconductor device, and the manufacturing range. 6:® & The manufacturing range of the semiconductor device is the first item > and the semiconductor device is provided with 僙 /, and has a cylindrical shape. Among them 第16頁 T271iU3_____ 六、申請專利範圍 9.依申請專利範圍第8項之半導體裝置之製造設備,其中 該懸吊部具有一圓筒狀。 1 0.依申請專利範圍第1項之半導體裝置之製造設備,其中 該容室的頂部係半球形。 11.依申請專利範圍第1 0項之半導體裝置之製造設備,尚 包含一氣體注入器’其位在該容室之該内表面的頂部。 1 2.依申請專利範圍第1項之半導體裝置之製造設備,尚包 含一晶座驅動板’其係連接至該晶座,該晶座驅動板係精 由一馬達而移動。Page 16 T271iU3_____ VI. Scope of Application Patent 9. The manufacturing apparatus of a semiconductor device according to claim 8 of the patent application, wherein the suspension portion has a cylindrical shape. The manufacturing apparatus of the semiconductor device according to the first aspect of the invention, wherein the top of the chamber is hemispherical. 11. A manufacturing apparatus for a semiconductor device according to claim 10 of the patent application, further comprising a gas injector 'located on top of the inner surface of the chamber. 1 2. A manufacturing apparatus for a semiconductor device according to the first aspect of the patent application, which further comprises a crystal driver board attached to the crystal holder, the crystal panel being moved by a motor. 第17頁Page 17
TW91109647A 2002-05-08 2002-05-08 Apparatus for manufacturing a semiconductor device TWI271813B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109841544A (en) * 2017-11-29 2019-06-04 Tes股份有限公司 The moving method and substrate board treatment of ejector pin unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109841544A (en) * 2017-11-29 2019-06-04 Tes股份有限公司 The moving method and substrate board treatment of ejector pin unit

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