201237992 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種夾盤結構以及一種使用該炎盤結 構之半導體製程設備，特別關於一種夾盤結構，其係使用 改良之導引環，而非習知頂針來載入一半導體基板至一爽 盤上，以及使用上述夾盤結構之半導體製程設備。 【先前技術】 在半導體製程中，沉積製程或蝕刻製程常被實施以在 一基板上形成一薄膜，且該薄膜可具有一所需圖案。其中 形成薄膜之一方法為電漿技術，而電漿技術包含電漿辅助 4匕學氣彳目沉積(plasma enhanced chemical vapor deposition， PECVD)製程以及電漿银刻（plasma etching)製程。 電漿製程設備依據電漿產生的方式可以分為電容式 麵合電槳（capacitive coupled plasma, CCP)以及電感式輕 合電製（inductive coupled plasma，ICP)兩類。在電容式 耦合電漿製程設備中，一上電極係設置於一反應腔室之頂 部’並且一下電極係設置於一夾盤（chuck)之底部，以為 產生電漿，其中一基板或一基板托盤係設置於夾盤上。另 外，在電感式耦合電漿製程設備中，一感應線圈係設置於 反應腔室之了員部或是頂部的周圍，並且下電極設置於夾盤 之底部。電容式以及電感式耦合電漿製程設備係供應射頻 交流電（RF Power)或直流電（DC power)給上、下電極、 或是感測線圈及下電極，以在反應腔室内產生電漿。 201237992 此外，電漿製知设備更包含反應腔室以及一傳輸腔室 (transfer chamber )或一晶圓承載腔室（1〇ad]〇ck chamber)，以將單一基板或承裁複數基板之一基板托盤傳 送至反應腔至。枚葉式（cluster type )電漿製程設備係包 含複數反應腔室，並包含晶圓承载腔室及傳送腔室，以將 真空處理過之基板或基板托盤從晶圓承載腔室經由傳輸 腔至傳送至反應腔至。相對地’對於僅具有單一反應腔室 之笔毁製私δ又備並無配置傳輸腔室，因此基板或基板托盤 係直接從晶圓承載腔室傳送至反應腔室，而不經由傳輸腔 室。 當晶圓或晶圓托盤在傳輸腔室或晶圓承載腔室以及 反應腔室之間進行載入及卸載的過程時，一傳輸臂 (transfer arm )係進入反應腔室之内部。同時，複數頂針 係穿過夾盤並可上下移動’其中先向上移動以支樓晶圓或 晶圓托盤，然後再向下移動，以使基板或基板托盤置放於 夾盤之上。 另外，化學氣相沉積裝置包含一加熱構件，其係設置 於夾盤之底部以加熱夾盤’以提升沉積於基板上之薄膜的 品質。由於製程係在一較低的壓力條件下進行，因而爽般 與加熱構件之間的熱傳係藉由熱傳導進行。若是基板材料 對熱傳較敏感者’例如用於製造發光二極體晶片之該寶石 基板，則夾盤之表面的溫度分佈會直接影響基板的溫度分 佈。 另外，由於上述裝置係使用頂針來達到支撐作用，因 201237992 而夾盤内需设置複數穿孔以讓頂針通過，使得加熱構件之 一加熱元件（如加熱導線）就需繞過該等穿孔，造成夾盤 之穿孔周圍無法有均句的熱傳，因而使得基板同樣無法有 均勻的溫度分佈。此外，在基板或基板托盤置放在炎盤上 之後’頂針就向下移動至夾盤之上表面：然而，頂計係由 陶莞材料製成’由於陶£材料不利熱傳導，使得頂針周圍 產生溫度差。 【發明内容】 盖，馨於上述問題，本發明之一目的為提供—種能夠改 °夹義之溫度分佈之炎盤結構與半導體製程設備。 為達上述目❺，本發明之一考重夹盤結構具有一夹盤以 主體支稽夹盤。夹盤結構包含一固定導引環、至少一 周夕^導引環以及-驅動針。固定導引環固設於失盤之—外 導引二環固定部形成於固定導引環。移動 動移:;=r定部’並上下移動。-針驅 定部在定:::::具二對之二移動導引環固 部，2固Γ從固定導引環之一頂部延伸至其一底 口疋導引環被分割成兩部分。 且其传=%例巾’夾魅構具有至少二移動料環，並 ^错由1動導引環連接件而連接 tlQ動而上下移動時，該等移動導引環之作動 201237992 可相同。此外，移動導引環連接件之尺寸係讓固定導引環 通過。藉此可避免移動導引環連接件之向下移動被固定導 引環阻擋。 在一實施例中，移動導引環可包含一對位凹部以座落 一基板。對位凹部之一曲率與基板或基板組件之一外周緣 之曲率相同。此外，基板可座落於對位凹部，並且對位凹 部可具有一由外向内之傾斜，藉此，當基板置放於移動導 引環時，基板可藉由對位凹部之傾斜而自動對準。 在一實施例中，夾盤結構可更包含一氣壓驅動單元， 其設置於主體内，並驅動驅動針上下移動。氣壓驅動單元 可使用氣壓而驅動一驅動針連接件，藉此可垂直驅動由驅 動針連接件所支撐之驅動針。 一夾持環可設置於移動導引環之上。夾持環可包含一 間隔部，間隔部耦接於移動導引環之頂部。 此外，一加壓環可搞接於移動導引環連接件之一外周 緣，藉此以讓夾持環更可靠地加壓於基板。在此態樣中， 移動導引環連接件可包含一加壓環固定凹部，並且加壓環 包含一固定凸部對加壓環固定凹部，使得加壓環可耦接 於移動導引環連接件。 此外，本發明提供一種半導體製程設備，其係包含一 反應腔室以及上述之夾盤結構。 夾盤結構可藉由一懸臂方式而支撐於反應腔室内。 【實施方式】 201237992 以下將參照相關圖式，說明依據本發明較佳實施例之 一種夹盤結構與半導體製程設備，其中相_元件將以相 同的參照符號加以說明。 圖1為本發明較佳實施例之一種半導體製程設備的示 意圖。 半導體製程設備1包含一反應腔室3以及一夹盤結構 1 〇，夾盤結構1 〇設置於反應腔室3内。如圖1所示之半 導體製程設備1’ 一感應線圈5設置於反應腔室3之頂部， f藉由電感式耦合電漿方法產生電漿。然而，本發明之半 導體製程設備1不限制於電感式耦合電漿式，亦可為一電 感式耦合電漿式。而在電感式耦合電漿式之態樣中，反應 月二至3上並無设置感應線圈5，而是一上電極設置於反應 腔室3之頂部以藉由電感式耦合電漿方法產生電漿。當 然’其他不使用電漿之半導體製程設備只要其不脫離本發 明之精神’即落入本發明之範圍内。 如圖1所示，夾盤結構1〇可藉由懸臂方式而被支撐， 其中，一組合式之固定單元7係從反應腔室3之一側的開 口伸出並支撲、驅動夾盤結構1〇。懸臂式之夹盤結構可讓 在反應腔至3内之反應氣體變得均勻。當然，夾盤結構 亦可用其他方式來支祛，例如藉由從反應腔室3之底部延 伸之一支撐部來支撐。 一基板或一基板組件W (以下統稱基板）係設置於夾 盤結構10之上。在本實施例中，基板w係在沒有頂針的 情況下’設置於夾盤結構1 〇之—夾盤。 8 201237992 圖2為本發明較佳實施例之一種夹盤結構的分解示音、 圖，圖3為夾盤結構的組合示意圖，圖4為夹盤結構的剖 面示意圖。 炎盤結構10包含-主體12、一夾盤14、一固定導引 環2〇以及複數移動導引環仏、m。夾盤Μ設置於主體 U上，固定導引環20固定於夾盤14之一外周緣，移動= 引環32a、32b可在固定導引環2〇之移動導引環固定部 22a、22b作上、下移動。 主體】2彳支樓夾盤14。在懸臂式夹盤態樣中，主體 12係耦合於如圖丄所示之組合式固定單元7 撐部支撐夾盤14的態樣中，主體12 件以支撐夾盤Μ之一下表面。了為風相式支禮構 ”夾盤14藉由主體12支撐，並有一加敎 ^ 了企二盤14内。另外’―降溫元件（圖未顯示) ;4::ΓΠ6設置於央盤14之一底部，以控制央盤 之/皿度。在-貫施例中，降溫S件可呈環狀，並 冷部液在其中循環。夾盤14係耦接 體12與夾般14妯k 而為使主 與失盤絕緣環48設置於主體 固定導引環20固設於夾盤14之外 i==r32a、32b會在以下有進—步的 料。此夕Γ固=引環32a'32bif可包含陶究材 而言，對隹^導引環20可設計作為一種對焦環。一般 Ά可避免半導體製程設備之央盤14被電裝所 9 201237992 損壤’並可使電漿集中於基板w上。 η =定導引壤2G之-頂部係有_缺口以形成移動導引 環固定部22a、22b。並且較佳者係移動導引環固定部m、 饥係形成於固定導引環2〇之相對側。另外，如圖2所示， 5導弓:環20之移動導引環固定部22a、22b係藉由在固 引衣20之頂部之一預設位置形成缺口而， 中’移動_固定部22a、22b可藉由將固定 2G之—端在垂直方向上完全切除而形成。在此狀 數^位固定導引環2〇非一連續的環形，而是被分割成複 數指’亚且移動導引環32a、32b位於該等部位之間。 =引環固定部22a，形成於固定 =，32b可在移動導引環… ]〇之上時基板W藉由—傳輸臂傳輸至夾盤結構 i上f’移動導㈣32a、32b#從傳輸 至夾盤]4h此外，當基板W從央盤 上向上^ 引環仏⑽係使基板％從夾盤14 ή上和動，亚將基板w傳給傳輸臂。 在複數移動導引環32a、m的態 =物動導_2a，之作動相= 導引裱32a、32b係Μ 士祖成 若M w 驅動針恤、⑽所驅動。 右艇動針！6。鳩之—端部藉由谭 移動導㈣仏、32b，卿 方式而固疋灰 動針16a、16b所支揮。 *心、32b可藉由驅 之作動相㈣為使移動導㈣32a、3以 私動料環32a、32b之支撐的強度， 201237992 =佳::細導引環32a、32b固定於移動導引環連接件 移動^貫施例中’複數移動導引環歧孔36係、設置於 接件3〇内，並且複數通孔精於移動導 丄内，使得移動導引環仏，可_ :二？ 動導引環連接件3〇。移動導引環連接件 之形狀可咖定導引環20穿設於其内。 日士^外，為了基板W在置放於移動導引環32a、32b上 ^夠對準移動導引環32a、32b，複數對位凹部％係形 曲走移動導引每32a、32b。較佳者係各對位凹部34之一 率與基板^—外周緣之曲率相同。此外，基板㈣ =於各對位凹部34 ’各對位凹部34具有一由外向内之 傾斜以利基板W之座落。 田卜门内之 以下係說明移動導引環3h、32b之驅動結構。 移動導引環32a、m上、下移動，驅動針他、 24b L叹而超過主體Π之頂部。複數驅動針穿設孔24a、 内係"置於収導引環之移動導引環_P22a、22b ^便驅動針16a、16b之驅動。驅動針⑹、⑽支 二多:導引環32a，之底部。移動導引環仏侧 曰力針16a、16b之上下作動而被驅動進行上、下運動。 as :轉、動馬達、-齒輪組件（Pini0n-rack gear ssembly )、—線性馬達戋一 為驅動= ==溫環境，因此較佳者係一氣壓驅動構件:使用 動驅動針心⑽上下移動。圖4顯示一氣愿驅動構 201237992 件，其包含一氣壓驅動單元40以及一驅動針連接件42， 用以驅動驅動針16a、16b。驅動針連接件42係藉由氣壓 驅動單元40之驅動而上、下移動，並且驅動針連接件42 之端部與驅動針16a、16b連接。氣壓驅動單元40使用氣 壓來驅動驅動針連接件42上下移動，因而被驅動針連接 件42所支撐之驅動針16a、16b可藉由驅動針連接件42 之垂直作動而上下移動。另外，較佳者係驅動針16a、16b 之外緣由保護風箱44a、44b所保護。 圖5(a)至圖5(d)為本實施例之半導體製程設備之夾盤 結構載入基板的不意圖。 請參照圖5(a)，當移動導引環32a、32b藉由驅動針 16a、16b之作動而向上移動時，設置於傳輸臂50之基板 W係被轉移。其中，傳輸臂50之寬度係小於兩移動導引 環32a、32b之間距，並且基板W之寬度係大於移動導引 環32a、32b之間距。 請參照圖5(b)，當傳輸臂50位於移動導引環32a、32b 之上時，傳輸臂50係向下移動。傳輸臂50之寬度係小於 移動導引環32a、32b之間距，並且基板W之寬度係大於 移動導引環32a、32b之間距。因此，當傳輸臂50向下移 動時，傳輸臂50係穿設移動導引環32a、32b之間，並且 基板W座落於移動導引環32a、32b上。另外，形成於移 動導引環32a、32b之對位凹部34可讓基板W自動對準並 且座落於移動導引環32a、32b上。 請參照圖5(c)，在基板W座落於移動導引環32a、32b 12 201237992 之後，傳輸臂50係退去。 n月參,日'?、圖5(d) ’卩返者驅動針16a、16b向下移動，移動 導弓丨裱32a、32b亦向下移動，並且基板w被載入至夾盤 14上。 上述係說明基板W載入至夾盤14的過程。而使其杯 W從央盤】4卸狀财之次料與載人過程相反使餘 以下說明本發明另-實施例之半導體製程設備之一 夾盤結構。 圖6為本發明另一實施例之半導體製程設備之一夾般 ^構的分解示意圖’目7為圖6所示之夾盤結構的組合: 思圖’圖8為ϋ 6之夾盤結構的剖面示意圖。 由於圖6至圖8所示之夾盤結構 與圖2至圖4所示之夾盤結構10相同 兩者之不同處。 大部分的構件係 ，因此以下係說明 # + 1死^列中 姓垆μ/ 以〜人巳言一灭符環60。央 加壓力給載人至夾盤14之基板w之頂部的外 周、，彖，使付基板w能緊貼於夾盤14。 失持環60係與移動導引環32a、32b之頂部耗入， 错由複數間隔部62a、62b D 、' 一子苜执炻触Ba U夕勁冷引裱32a、32b相距 預叹距離。間隔部62a、62b確保門，、"壶抽 %可將基板W傳輸至γ工間以瓖傳輸臂 輸至㈣導引環32a、孤之頂部。 在^例中，為裳設夾 64a、64b係設置於移動 減火持《設孔 6仍係形成於夾持環6。内，使:二内’亚且通孔-、 吏侍夾持裱60可藉由螺栓或 201237992 螺針而裝設於移動導引環32a、32b。 此外文盤結構1 〇可更句人一# 持環60之加壓作韋 3 口坠}衣，以補助夹 土作業。#父佳者係加壓環 人 環連接件30 ,因而自^ <川固°又方、私動導？丨 ^ 而此苑加壓力給夾持環60、移動 、32b以及移動導引環連接件30。 導？丨％ 請參照圖6至圖8,在—實施例中，加壓環固a 仏，係形成於移動導引環連接件％，=部 係形成於加壓環7〇。加壓環7。之 = 或較大於移動導引環連接件扣之外周緣。當加壓環= 設於移動導引環連接件3Q之外周緣時，岐凸部72二固 係卡合於加壓環固定凹部31a、训。藉此，加壓環 耦接於移動導引環連接件3〇之外周緣。另外，第— 33a、33l^形成於移動導引環仏、3此，並與加壓環 凹部31.a、31b之凹面形狀相對應，並且第二切面74^抑 係形成於加壓環70之固定凸部72a、？2b之内部。 圖9(a)至®1 9(d)為U 6之半導體製程設備之爽盤 載入基板的示意圖。 請參照圖9(a)，當移動導引環32a、32b藉由驅動針 16a、16b之作動而向下移動時，設置於傳輪臂％之芙板 W係被轉移。其中’傳輸臂5〇之寬度係小於兩移動；： 環32a、32b之間距，並且基板w之寬度係大於移動導引 環32a、32b之間距。另外，夾持環6〇之間隔部仏、㈣ 之間距係大於基板W之寬度。 請參照圖9(b)，失持環6〇與移動導弓丨環3^'3化藉 14 201237992 由間隔部62a、62b而形成垂直方向的間距 係在失持環60與移動導引環32a、3沘之 輪臂 5 if位於移動導引環仏、孤之上時’傳輸臂5。:： 傳輸臂50向下移動’傳輪臂％係穿設於移動 32bJT b之間’並且基板％座、落於移動導弓丨環％、 π參照圖9(c)’在基板W座落於移動導引環ua、 上之後’傳輸臂50係退去。 請參照圖9(d)’隨著驅動針16a、⑽向下移動，移動 =環仏、32b亦向下移動，並且基板w係載入至失盤 上述係說明基板W載入至夾盤14的過程。而使夷板 W從夾盤14卸載之過程之次序係與載入過程相反。土 依據本發明，由於夾盤内不需設置習知用以载入或卸 載基板之頂針’因而能避免夾盤内溫度不均勻之現象。 此外’本發明係藉由一對移動導引環支標基板，因而 使=基板更穩定地被支撐。此外，本發明藉由在各移動導 引％形成對位凹部，藉此在對位凹部自動對準基板之位置 後，基板可座落於夾盤上。 以上所述僅為舉例性，而非為限制性者。任何未脫離 本發明之精神與範田壽，而對其進行之等效修改或變更，均 應包含於後附之申請專利範圍中。 【圖式簡單說明】 201237992 圖1為本發明較佳實施例之一種半導體製程設備的示 意圖； 圖2為本發明較佳實施例之一種夾盤結構的分解示意 圖； 圖3為本發明較佳實施例之一種夾盤結構的組合示意 圖； 圖4為本發明較佳實施例之一種夾盤結構的剖面示意 圖； 圖5(a)至圖5(d)為本發明較佳實施例之半導體製程設 備之炎盤結構載入基板的示意圖； 圖6為本發明另一較佳實施例之半導體製程設備之一 夾盤結構的分解示意圖； 圖7為圖6所示之夹盤結構的組合示意圖； 圖8為圖6之夾盤結構的剖面示意圖；以及 圖9(a)至圖9(d)為圖6之半導體製程設備之夾盤結構 載入基板的示意圖。 【主要元件符號說明】 1 :半導體製程設備 3 :反應腔室 5 :感應線圈 7 :固定單元 10 :夹盤結構 12 :主體 16 201237992 14 ： 夾盤 16a 、16b : 驅動針 20 : 固定導引壞 22a ' 22b ： 移動導引環固定部 24a > 24b ： 驅動針穿設孔 30 : 移動導 引環連接件 31a 、31b : 加壓環固定凹部 32a 、32b : 移動導引環 33a 、33b : 第一切面 34 : 對位凹 部 36 : 移動導 引環裝設孔 38 : 通孔 40 : 氣壓驅 動單元 42 : 驅動針連接件 44a ' 44b ： 保護風箱 46 : 加熱元件 48 : 絕緣環 50 : 傳輸臂 60 : 失持壤 62a 、62b : 間隔部 64a 、64b : 夾持環裝設孔 66a 、66b : 通孔 70 : 加壓環 72a 、72b : 固定凸部 201237992 74a、74b :第二切面 W :基板201237992 VI. Description of the Invention: Technical Field of the Invention The present invention relates to a chuck structure and a semiconductor process apparatus using the same, particularly to a chuck structure using a modified guide ring. A conventional ejector pin is used to load a semiconductor substrate onto a slab, and a semiconductor process apparatus using the above chuck structure. [Prior Art] In a semiconductor process, a deposition process or an etching process is often practiced to form a film on a substrate, and the film can have a desired pattern. One of the methods for forming a thin film is plasma technology, and the plasma technology includes a plasma-assisted chemical vapor deposition (PECVD) process and a plasma etching process. The plasma processing equipment can be divided into two types: capacitive coupled plasma (CCP) and inductive coupled plasma (ICP). In a capacitively coupled plasma processing apparatus, an upper electrode is disposed at the top of a reaction chamber and a lower electrode is disposed at a bottom of a chuck to generate plasma, wherein a substrate or a substrate tray It is set on the chuck. Further, in the inductively coupled plasma processing apparatus, an induction coil is disposed around the portion or the top of the reaction chamber, and the lower electrode is disposed at the bottom of the chuck. Capacitive and inductively coupled plasma processing equipment supplies RF power or DC power to the upper and lower electrodes, or the sensing coil and the lower electrode to generate plasma in the reaction chamber. 201237992 In addition, the plasma preparation device further comprises a reaction chamber and a transfer chamber or a wafer carrying chamber to load a single substrate or a plurality of substrates. A substrate tray is transferred to the reaction chamber. A cluster type plasma processing apparatus includes a plurality of reaction chambers and includes a wafer carrying chamber and a transfer chamber to transfer the vacuum processed substrate or substrate tray from the wafer carrying chamber to the transfer chamber to the transfer chamber Transfer to the reaction chamber to. Relatively, for a pen with only a single reaction chamber, there is no configuration of the transfer chamber, so the substrate or substrate tray is directly transferred from the wafer carrying chamber to the reaction chamber without passing through the transfer chamber. . When the wafer or wafer tray is loaded and unloaded between the transfer chamber or the wafer carrying chamber and the reaction chamber, a transfer arm enters the interior of the reaction chamber. At the same time, the plurality of thimbles are passed through the chuck and can be moved up and down. The first of them is moved upward to support the wafer or wafer tray, and then moved downward to place the substrate or substrate tray on the chuck. Further, the chemical vapor deposition apparatus includes a heating member which is disposed at the bottom of the chuck to heat the chuck ' to improve the quality of the film deposited on the substrate. Since the process is carried out under a relatively low pressure condition, the heat transfer between the cool and the heating member is carried out by heat conduction. If the substrate material is sensitive to heat transfer, e.g., the gem substrate used to fabricate the light-emitting diode wafer, the temperature distribution of the surface of the chuck directly affects the temperature distribution of the substrate. In addition, since the above device uses the thimble to achieve the supporting effect, due to 201237992, a plurality of perforations are required in the chuck to pass the thimble, so that one of the heating elements (such as the heating wire) of the heating member needs to bypass the perforations, resulting in a chuck. There is no uniform heat transfer around the perforations, which makes the substrate also unable to have a uniform temperature distribution. In addition, after the substrate or substrate tray is placed on the plate, the ejector pin moves down to the upper surface of the chuck: however, the top gauge is made of ceramic material, which is caused by the unfavorable heat conduction of the material. Temperature difference. SUMMARY OF THE INVENTION A cover, in addition to the above problems, is an object of the present invention to provide a sturdy disk structure and a semiconductor process apparatus capable of changing the temperature distribution. In order to achieve the above objectives, one of the weighting chuck structures of the present invention has a chuck to support the chuck. The chuck structure includes a fixed guide ring, at least one cycle guide ring, and a drive pin. The fixed guiding ring is fixed on the lost disk - the outer guiding two-ring fixing portion is formed on the fixed guiding ring. Move Move:;=r fixed section' and move up and down. - The needle drive is in the position of ::::: two pairs of moving guide ring solids, 2 solids extending from the top of one of the fixed guide rings to one of the bottoms, the guide ring is divided into two parts . And the transmission =% of the towel's clip has at least two moving material rings, and the wrong movement is controlled by the movable guide ring connecting member, and the moving guide ring is actuated 201237992. In addition, the size of the moving guide ring connector allows the fixed guide ring to pass. Thereby, the downward movement of the moving guide ring connector can be prevented from being blocked by the fixed guide ring. In an embodiment, the moving guide ring may include a pair of bit recesses to seat a substrate. The curvature of one of the alignment recesses is the same as the curvature of the outer periphery of one of the substrate or substrate assembly. In addition, the substrate may be seated in the alignment recess, and the alignment recess may have an inclination from the outside to the inside, whereby when the substrate is placed on the moving guide ring, the substrate may be automatically aligned by the inclination of the alignment recess quasi. In an embodiment, the chuck structure may further include a pneumatic driving unit disposed in the main body and driving the driving needle to move up and down. The pneumatic drive unit can drive a drive pin connector using air pressure, whereby the drive pin supported by the drive pin connector can be driven vertically. A clamping ring can be placed over the moving guide ring. The clamping ring can include a spacer coupled to the top of the moving guide ring. Further, a press ring can be attached to the outer periphery of one of the moving guide ring connectors, thereby allowing the clamp ring to be more reliably pressed against the substrate. In this aspect, the moving guide ring connecting member may include a pressing ring fixing recess, and the pressing ring includes a fixing convex portion to the pressing ring fixing concave portion, so that the pressing ring can be coupled to the moving guiding ring connection. Pieces. Further, the present invention provides a semiconductor process apparatus comprising a reaction chamber and the above-described chuck structure. The chuck structure can be supported in the reaction chamber by a cantilever method. [Embodiment] 201237992 A chuck structure and a semiconductor process apparatus according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein the elements will be described with the same reference numerals. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of a semiconductor process apparatus in accordance with a preferred embodiment of the present invention. The semiconductor process apparatus 1 includes a reaction chamber 3 and a chuck structure 1 , and the chuck structure 1 is disposed in the reaction chamber 3. As shown in Fig. 1, a semiconductor device 1', an induction coil 5, is disposed at the top of the reaction chamber 3, and f is plasma-generated by an inductively coupled plasma method. However, the semiconductor device 1 of the present invention is not limited to the inductively coupled plasma type, and may be an inductively coupled plasma type. In the inductively coupled plasma mode, the induction coil 5 is not disposed on the reaction month 2 to 3, but an upper electrode is disposed on the top of the reaction chamber 3 to generate electricity by the inductively coupled plasma method. Pulp. It is to be understood that other semiconductor processing equipment that does not use plasma is within the scope of the invention as long as it does not depart from the spirit of the invention. As shown in FIG. 1, the chuck structure 1 can be supported by a cantilever method, wherein a combined fixing unit 7 protrudes from the opening on one side of the reaction chamber 3 and supports the chuck structure. 1〇. The cantilevered chuck structure allows the reaction gas in the reaction chamber to 3 to be uniform. Of course, the chuck structure can also be supported in other ways, for example by extending a support from the bottom of the reaction chamber 3. A substrate or a substrate assembly W (hereinafter collectively referred to as a substrate) is disposed on the chuck structure 10. In the present embodiment, the substrate w is disposed on the chuck structure 1 in the absence of the ejector pin. 8 201237992 FIG. 2 is an exploded view showing the structure of a chuck according to a preferred embodiment of the present invention, FIG. 3 is a schematic view showing the combination of the structure of the chuck, and FIG. 4 is a schematic cross-sectional view showing the structure of the chuck. The disc structure 10 includes a body 12, a chuck 14, a fixed guide ring 2〇, and a plurality of moving guide rings mm. The chuck Μ is disposed on the main body U, and the fixed guide ring 20 is fixed to the outer circumference of one of the chucks 14 , and the movement = the lead rings 32a, 32b can be made in the moving guide ring fixing portions 22a, 22b of the fixed guide ring 2 move up and down. Main body] 2 彳 夹 夹 夹 14. In the cantilevered chucking aspect, the body 12 is coupled to the embodiment of the modular fastening unit 7 support support chuck 14 as shown in Fig. ,, the body 12 being configured to support a lower surface of the chuck. For the wind phase, the chuck 14 is supported by the main body 12, and there is a twisting ^ in the second plate 14. In addition, 'the cooling element (not shown); 4:: ΓΠ6 is set in the central disk 14 One of the bottoms is used to control the degree of the central disk. In the embodiment, the cooling element S can be annular and the cold liquid is circulated therein. The chuck 14 is coupled to the body 12 and the clamp 14妯k In order to make the main and the disc-insulated insulating ring 48 are disposed on the main body fixed guiding ring 20 and fixed on the outside of the chuck 14, i==r32a, 32b will have the following materials in the following steps. '32bif can include ceramic materials, the 导引^ guide ring 20 can be designed as a focus ring. Generally, the central disk 14 of the semiconductor process equipment can be prevented from being damaged by the electric equipment. On the substrate w. η = fixed guide soil 2G - the top is _ notched to form the moving guide ring fixing portions 22a, 22b. And preferably, the moving guide ring fixing portion m, hunger is formed in the fixed guide In addition, as shown in FIG. 2, the 5-guide bow: the moving guide ring fixing portions 22a, 22b of the ring 20 are preset by one of the tops of the solid clothespin 20. In the notch, the middle 'moving_fixing portions 22a, 22b can be formed by completely cutting the fixed 2G end in the vertical direction. In this case, the fixed guiding ring 2 is not a continuous ring, but It is divided into a plurality of fingers and the moving guide rings 32a, 32b are located between the parts. The ring guide fixing portion 22a is formed at a fixed=, 32b can be used to move the guide ring... Transfer from the transfer arm to the chuck structure i on the f' move guide (four) 32a, 32b# from the transfer to the chuck] 4h In addition, when the substrate W is lifted from the central disk, the ring 仏 (10) is used to make the substrate % from the chuck 14 Up and down, the sub-substrate w is transmitted to the transfer arm. In the state of the complex moving guide ring 32a, m = the physical guide _2a, the action phase = the guide 裱 32a, 32b is the 祖 祖 祖 if M w drive The needle-shirt, (10) is driven. The right-handed needle! 6. The —--end is supported by the Tan moving guide (four) 仏, 32b, and the 方式 grey needle 16a, 16b. * Heart, 32b can be used The driving phase (4) is the strength of the moving guides (4) 32a, 3 supported by the private moving rings 32a, 32b, 201237992 = good:: the fine guiding rings 32a, 32b are fixed to the moving guide The ring connecting member moves through the plurality of moving guiding ring holes 36, is disposed in the connecting piece 3〇, and the plurality of through holes are fine in the moving guide, so that the moving guiding ring is 仏, _: two The moving guide ring connecting member 3〇. The shape of the moving guiding ring connecting member can be set in the inside of the guiding guide ring 20. In addition, the substrate W is placed on the moving guiding ring 32a, 32b. The upper guide is aligned with the moving guide rings 32a, 32b, and the plurality of aligning recesses are configured to guide each of the 32a, 32b. Preferably, the ratio of each of the alignment recesses 34 is the same as the curvature of the outer periphery of the substrate. Further, the substrate (4) = each of the alignment recesses 34' has an inclination from the outside to the inside to facilitate the seating of the substrate W. The following is a description of the driving structure of the moving guide rings 3h, 32b. The moving guide rings 32a, m move up and down, driving the needles, 24b L to sigh beyond the top of the main body. The plurality of driving pin through holes 24a and the inner portion are placed on the moving guide rings _P22a and 22b of the take-up ring to drive the pins 16a and 16b. The driving needles (6) and (10) are more than two: the guiding ring 32a, the bottom. Moving the guide ring 仏 side The forceps 16a, 16b are actuated to move up and down. As: rotary, moving motor, gear assembly (Pini0n-rack gear ssembly), linear motor 为 one drive = == warm environment, so it is better to use a pneumatic drive member: use the drive pin (10) to move up and down. Figure 4 shows a pneumatic drive mechanism 201237992 that includes a pneumatic drive unit 40 and a drive pin connector 42 for driving the drive pins 16a, 16b. The drive pin connector 42 is moved up and down by the driving of the air pressure driving unit 40, and the end portion of the drive pin connector 42 is coupled to the drive pins 16a, 16b. The pneumatic drive unit 40 uses the air pressure to drive the drive pin connector 42 to move up and down, so that the drive pins 16a, 16b supported by the drive pin connector 42 can be moved up and down by the vertical actuation of the drive pin connector 42. Further, it is preferred that the outer edges of the drive pins 16a, 16b are protected by the protective bellows 44a, 44b. 5(a) to 5(d) are not intended to be loaded into the substrate of the chuck structure of the semiconductor manufacturing apparatus of the present embodiment. Referring to Fig. 5(a), when the moving guide rings 32a, 32b are moved upward by the action of the driving pins 16a, 16b, the substrate W provided on the transfer arm 50 is transferred. The width of the transfer arm 50 is smaller than the distance between the two moving guide rings 32a, 32b, and the width of the substrate W is greater than the distance between the moving guide rings 32a, 32b. Referring to Figure 5(b), when the transfer arm 50 is positioned above the moving guide rings 32a, 32b, the transfer arm 50 is moved downward. The width of the transfer arm 50 is smaller than the distance between the moving guide rings 32a, 32b, and the width of the substrate W is greater than the distance between the moving guide rings 32a, 32b. Therefore, when the transfer arm 50 is moved downward, the transfer arm 50 is passed between the moving guide rings 32a, 32b, and the substrate W is seated on the moving guide rings 32a, 32b. Additionally, the alignment recesses 34 formed in the moving guide rings 32a, 32b allow the substrate W to be automatically aligned and seated on the moving guide rings 32a, 32b. Referring to FIG. 5(c), after the substrate W is seated on the moving guide rings 32a, 32b 12 201237992, the transfer arm 50 is retracted. n month, day '?, Fig. 5 (d) 'returner drive needles 16a, 16b move downward, move guide bows 32a, 32b also move downward, and substrate w is loaded onto chuck 14. . The above describes the process in which the substrate W is loaded to the chuck 14. The replacement of the cup from the central disk is the reverse of the maneuvering process. The following describes a chuck structure of a semiconductor process apparatus according to another embodiment of the present invention. FIG. 6 is an exploded perspective view showing a sandwich structure of a semiconductor process apparatus according to another embodiment of the present invention. FIG. 7 is a combination of the chuck structure shown in FIG. 6: FIG. 8 is a chuck structure of FIG. Schematic diagram of the section. Since the chuck structure shown in Figs. 6 to 8 is the same as the chuck structure 10 shown in Figs. 2 to 4, the difference therebetween is the same. Most of the component systems, so the following is the description of the # + 1 dead ^ column in the last name 垆 μ / to ~ people rumors a annihilation ring 60. The pressure is applied to the periphery of the top of the substrate w of the chuck 14, so that the substrate w can be brought into close contact with the chuck 14. The lost loop 60 is worn with the tops of the moving guide rings 32a, 32b, and the wrong spacing portions 62a, 62b D, 'a 苜 苜 Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba Ba The spacers 62a, 62b ensure that the door, "pot pumping % can transport the substrate W to the gamma station to transport the transfer arm to the (four) lead ring 32a, the top of the solitary. In the example, the clips 64a and 64b are set to move, and the hole 6 is formed in the clamp ring 6. Inside, the two inner and outer through holes can be mounted on the moving guide rings 32a, 32b by bolts or 201237992 screws. In addition, the structure of the disc 1 can be more sentenced to a person # holding the ring 60 of the pressure for Wei 3 mouthpiece} clothing to subsidize the soil work. #父佳者系压环 Human ring connector 30, thus from ^ < Chuangu ° side, private movement?丨 ^ This chamber applies pressure to the clamping ring 60, the movement, the 32b, and the moving guide ring connector 30. guide?丨% Referring to Fig. 6 to Fig. 8, in the embodiment, the pressurizing ring a is formed on the moving guide ring connecting member %, and the = portion is formed in the pressing ring 7''. Pressurizing ring 7. = or greater than the outer circumference of the moving guide ring connector buckle. When the pressing ring = is provided on the outer periphery of the moving guide ring connecting member 3Q, the convex portion 72 is fixedly engaged with the pressing ring fixing recess 31a. Thereby, the pressure ring is coupled to the outer periphery of the moving guide ring connector 3〇. In addition, the first 33a, 33l is formed on the moving guide ring 3, 3, and corresponds to the concave shape of the pressure ring recess 31.a, 31b, and the second cut 74 is formed on the press ring 70 Fixing convex portion 72a, ? The interior of 2b. Figures 9(a) through 1(9) are schematic diagrams of the refreshing substrate of the U6 semiconductor process equipment. Referring to Fig. 9(a), when the moving guide rings 32a, 32b are moved downward by the actuation of the driving needles 16a, 16b, the slab W of the transmission arm arm is shifted. Wherein the width of the transfer arm 5 is less than two movements; the distance between the rings 32a, 32b, and the width of the substrate w is greater than the distance between the moving guide rings 32a, 32b. Further, the distance between the spacers 仏 and (4) of the clamp ring 6 is larger than the width of the substrate W. Referring to FIG. 9(b), the lost loop 6〇 and the moving guide bow ring 3^'3 are borrowed 14 201237992. The vertical direction is formed by the spacers 62a, 62b in the vertical direction of the lost loop 60 and the moving guide ring. The wheel arm 5 of the 32a, 3沘 is located on the moving guide ring 孤, and the 'transport arm 5'. :: The transfer arm 50 moves downwards 'the transmission arm % is threaded between the movements 32bJT b' and the substrate % seat, falls on the moving guide bow ring %, π is referenced in Figure 9 (c)' on the substrate W After the moving guide ring ua, the transfer arm 50 is retracted. Referring to FIG. 9(d)', as the driving pins 16a, (10) move downward, the movement = ring 仏, 32b also moves downward, and the substrate w is loaded to the disk. The above-described system substrate W is loaded to the chuck 14. the process of. The order in which the board W is unloaded from the chuck 14 is reversed from the loading process. According to the present invention, since the ejector pin for loading or unloading the substrate is not required in the chuck, the temperature unevenness in the chuck can be avoided. Further, the present invention supports the substrate by a pair of moving guide rings, thereby making the = substrate more stably supported. Further, the present invention forms the alignment recess by the % of each of the movement guides, whereby the substrate can be seated on the chuck after the alignment recess is automatically aligned with the substrate. The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the invention may be included in the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a semiconductor processing apparatus according to a preferred embodiment of the present invention; FIG. 2 is an exploded perspective view of a chuck structure according to a preferred embodiment of the present invention; FIG. 4 is a schematic cross-sectional view showing a structure of a chuck according to a preferred embodiment of the present invention; and FIGS. 5(a) to 5(d) are diagrams showing a semiconductor process apparatus according to a preferred embodiment of the present invention; FIG. 6 is a schematic exploded view of a chuck structure of a semiconductor process device according to another preferred embodiment of the present invention; FIG. 7 is a schematic view showing the combination of the chuck structure shown in FIG. 8 is a schematic cross-sectional view of the chuck structure of FIG. 6; and FIGS. 9(a) to 9(d) are schematic views of the chuck structure loading substrate of the semiconductor process apparatus of FIG. [Main component symbol description] 1 : Semiconductor process equipment 3 : Reaction chamber 5 : Induction coil 7 : Fixed unit 10 : Chuck structure 12 : Main body 16 201237992 14 : Chuck 16a , 16b : Drive pin 20 : Fixed guide bad 22a ' 22b : moving guide ring fixing portion 24a > 24b : driving needle through hole 30 : moving guide ring connecting member 31a , 31b : pressing ring fixing recess 32a , 32b : moving guiding ring 33a , 33b : All face 34: Alignment recess 36: Moving guide ring mounting hole 38: Through hole 40: Pneumatic drive unit 42: Drive pin connector 44a '44b: Protective bellows 46: Heating element 48: Insulation ring 50: Transmission Arm 60: Loss of soil 62a, 62b: Spacers 64a, 64b: Clamping ring mounting holes 66a, 66b: Through hole 70: Pressing rings 72a, 72b: Fixing projections 201237992 74a, 74b: Second section W: Substrate
1818