TWI270964B - Package structure - Google Patents

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Publication number
TWI270964B
TWI270964B TW093138692A TW93138692A TWI270964B TW I270964 B TWI270964 B TW I270964B TW 093138692 A TW093138692 A TW 093138692A TW 93138692 A TW93138692 A TW 93138692A TW I270964 B TWI270964 B TW I270964B
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TW
Taiwan
Prior art keywords
carrier
wafer
package structure
heat dissipating
active heat
Prior art date
Application number
TW093138692A
Other languages
Chinese (zh)
Other versions
TW200620599A (en
Inventor
Chang-Chi Lee
Tong-Hong Wang
Original Assignee
Advanced Semiconductor Eng
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Priority to TW093138692A priority Critical patent/TWI270964B/en
Publication of TW200620599A publication Critical patent/TW200620599A/en
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Publication of TWI270964B publication Critical patent/TWI270964B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A package structure including a carrier, a chip and an active heat spreader is provided. The chip is disposed on the carrier and is electrically connected with the carrier. The active heat spreader is adhered with the chip and is electrically connected with the carrier. When the active heat spreader is electrified, the temperature of a first surface of the active heat spreader is lower than the temperature of a second surface of the active heat spreader, and the chip is adhered the first surface of the active heat spreader. Therefore, the heat generated by the chip can be rapidly conducted by the active heat spreader, and the heat dissipation efficiency of the package structure can be improved.

Description

1270964 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種封裝結構(package structure)，且 特別是有關於一種具有高散熱效率的封裝結構。 【先前技術】 立近年來，隨著積體電路(integrated circuit，1C)晶片之内 :線路的積集度(integrati〇n)不斷地攀升，晶片所產生的熱 月b也不斷增加。就個人電腦而言，高積集度之積體電路晶 片（例如中央處理器或繪圖晶片等IC晶片）均會產生熱能。 為了使上述之ic晶片能夠維持正常運作，IC晶片必須維 2較佳的工作溫度下，㈣姐度獅造姐能下降或 J壞。換έ之’隨著1C晶片的運算速度不斷增加，對於散 也相對提高。因此目前部分封裝結構本身就 晶片所產生的熱能亦不斷地增加， 無法滿足晶片的散熱需求。 【發明内容】 承^^由於習知封裝結構巾的散熱裝置皆為被動式 :、疋’晶片内部線路的積集度持續攀升的情況下， 因此被動式散熱裝置已 有鑑於此，本發明的目 其主要广一 · 的就是在提供一種封裝結構，1270964 IX. Description of the Invention: [Technical Field] The present invention relates to a package structure, and more particularly to a package structure having high heat dissipation efficiency. [Prior Art] In recent years, as the integrated circuit (integrati) of the integrated circuit (1C) wafer has continuously climbed, the heat month b generated by the wafer has also increased. In the case of personal computers, high-integration integrated circuit wafers (such as IC chips such as central processing units or graphics chips) generate thermal energy. In order to enable the above-mentioned ic chip to maintain normal operation, the IC chip must maintain a better operating temperature, and (4) the sister of the lion can drop or J is bad. In the case of the 1C wafer, the calculation speed is increasing, and the dispersion is relatively increased. Therefore, the thermal energy generated by the chip in the package structure itself is constantly increasing, which cannot meet the heat dissipation requirements of the chip. SUMMARY OF THE INVENTION The heat sink of the conventional package structure towel is passive: in the case where the accumulation degree of the internal circuit of the wafer continues to rise, the passive heat sink has been in view of the above, and the present invention has the object. The main one is to provide a package structure,

(牛。其中，晶片係配置 。此外，主動散熱元件 係與晶片連接， ，於上述目的，本發明提出一種I 承載器晶;UX及—主動散熱元件。 於承載m與承魅電性連接。迫 係與晶片連接，且與承載H電性連接。 1270964 15283twf.doc/y 上所述之封裝結構例如更包括一封裝膠體，其係將晶 片主動散熱元件固著於承載器上。此外，承載器例如係 印刷電路板(Printed circuit board，PCB)。 一上述之封裝結構中，主動散熱元件例如係一熱電致冷 π件(thermai_electric c〇〇ler，TEC)，其具有一第一表面與一 第二表面。當主動散熱元件通電時，第一表面之溫度係低 於第二表面之溫度，且晶片係與熱電致冷元件之第一表面 連接。 、、上述之封裝結構中，熱電致冷元件之材質例如是N型 ^ 、p 型半導體、Bi2Te” pbTe、SiGe、F㈣或 c 之化合物。 相#Λΐ之封裝結射，承載11例如具有—承載面以及一 動而晶片係配置於承載器之承載表面上，且主 多數;以:】置3片i。此外’封裝結構例如更包括 =、:構例如更包括—第—散熱器，其倾主動散熱元件接 相對ΐϊί封裝結射，承載11例如具有—承載面以及一 晶片之Η。主動散熱兀件係配置於承載11之承載面與 其·’封裝結構例如更包括多數個第二焊球， ==栽=面上。另外’封裝結構例如更包括 政熱器，其係與晶片接觸。 接於ί片述:==括多數個第-焊線，其係連 與承栽15之間。此外’封《結構例如更包括多數 1270964 15283twf.doc/y 接。另冰透過曰曰片及第二焊線與承載器電性連 拉f裝結構例如更包括多數個第三焊線，其係連 接於主動散熱元件與承載m 、 接於ίίίίί結構例如更包括多數個第-凸塊，其係連 ^ ，、係連接於晶片與主動散熱元件之間，其中 兀件係透過晶片以及第二凸塊與承載器電性連 。夕’封裝結構例如更包括多數個第三凸塊，其係連 接於主動散熱元件與承載器之間。 、 一由於本發明之封裝結構採用一主動散熱元件，其具有 曰第表面與-第二表面，且當主動散熱元件通電時，與 晶片接觸之第-表面的溫度係低於第二表面的溫度，所= 主動散熱7G件之第—表面可以快速吸收晶片的熱。因此， 本發明之封裝結構具有高散熱效率。 4為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所關式，作詳細說 明如下。 【實施方式】 圖1係繪示依照本發明一較佳實施例所述之一種封裝 結構的剖面圖。請參照圖卜本實施例之封裝結構200包 括一承載器210、一晶片22〇以及一主動散熱元件23〇。其 中，晶片220係配置於承載器21〇上，且與承載器21〇電 性連接。此外’主動散熱元件230係與晶片220連接，且 與承載器210電性連接。 1270964 15283twf.doc/y 上所述之封裝結構200例如更包括一封裝膠體24〇， 其係將晶片220主動散熱元件230固著於承載器21〇上。 其中，承載器210例如係印刷電路板、基板、導線架或其 他種類之電路板。 〃 本發明一較佳實施例中，主動散熱元件23〇例如係熱 電致冷元件，其具有-第一表面232與一第二表面234。 當，動散熱元件230通電時，第一表面232之溫度係低於 第-表面234之溫度，且晶片22〇係與主動散熱元件23〇 之第-表面232連接。具體來說，熱電致冷元件之材質例 如是N型半導體、p型半導體、Bi2Te3、pbTe、、心说、 C0AS3之化合物或其他熱電材料。 f 2A與圖2B繪示為熱電致冷元件的散熱原理示意 圖。請參照圖2A與圖2B，一般最簡單的熱電致冷元件係 將一 N型半導體310或p型半導體32〇 當通電時，N型半導體31G之電子或？型半導體=之電 洞會依箭頭之方向流動，並且產生—溫度較低的吸熱面 312、322與一溫度較高的散熱面314、324。 請再參照圖卜本實施例之封裝結構細係利用上述 之熱電致冷元件的散熱原理，使“ 22()與主動散熱元件 230之第-表面232接觸。當主動散熱元件23()通電時， 其第-表面232係用以吸收晶片22〇所產生的熱，以達到 快速散熱的絲n為了使本實_之封裝結構2〇〇 ΐίΐ效果更佳，可於封裝結構200中增加-散熱器250， 使其與主動散熱元件23G_，⑽絲散熱元件23〇於 1270964 15283twf.doc/y 第二表面234所產生的熱排出封裝結構2⑻外，進而提高 主動散熱元件230之散熱效率。另外，圖丨中所繪示之主 動散熱元件的外形僅為舉例之用，其亦可變更為其他任何 形式之主動散熱元件。 本發明一較佳實施例中，承載器210例如具有一承載 ，212以及一相對之背面214,而晶片22〇係配置於承載 器210之承載表面212上，且主動散熱元件230係配置於 晶片220上。此外，封裝結構2〇〇例如更包括多數個焊球 260,其係配置於承載器21〇的背面214上，而此封裝結構 200係藉由焊球260而與其他元件電性連接。 值得注意的是，本實施例中位於晶片22〇下方的焊球 260例如是散熱焊球(thermal ball)，其係用以將晶片22〇所 產生的熱排出，以進一步提高封裝結構2〇〇的散熱效率。 當然，本實施例並不限定必須有散熱焊球的存在，封裝結 構200亦可只有訊號焊球(signal ball)與接地焊球 ball) 〇 在本實施例中，封裝結構200例如更包括多數個焊線 270’其係連接於晶片220與承載器230之間以及主動散熱 元件230與承載器210之間。換言之，晶片22〇與主動^ 元件230係分別透過焊線270而與承載器21〇電性連接。 值得注意的是，在本實施例中係藉由主動散熱元件23〇内 部的線路設計，使其陽極與陰極位於同一表面(例如第二表 面234)上，因此焊線270可焊接於主動散熱元件23〇之同 一^面上0 1270964 15283twf.doc/y 圖3係繪示依照本發明一較佳實施例所述之另一種 裝結構之剖面圖。請參照圖3 ,上述之封裝結構2〇〇中，' 焊線270係連接於晶片220與承載器230之間以及主動 熱元件230與承載器210之間(如圖丨所示）。然而，在本 實施例中，焊線270亦可連接於晶片22〇與承載器23〇之 間以及主動散熱元件230與晶片220之間。亦即，晶片22〇 係透過焊線270而直接與承載器21〇電性連接，而主動散 熱元件230係透過晶片220以及焊線27〇而間接與承載器 210電性連接。 、 " 圖4係繪示依照本發明一較佳實施例所述之再一種封 裝結構的剖面圖。請參照圖4，其與圖1相似，不同處在 於晶片220以及主動散熱元件230與承載器21〇電性連接 的方式。更詳細地說，圖4中所繪示之封裝結構2〇〇a包括 多數個凸塊280、290,其中凸塊280係連接於晶片22〇與 承載器210之間，而凸塊290係連接於主動散熱元件 與承載器210之間。 μ 圖5Α與圖5Β係繪示依照本發明一較佳實施例所述之 又二種封裝結構的剖面圖。請先參照圖5Α，本發明一較佳 實施例中，主動散熱元件230除了如圖1中所示之配置於 晶片220上之外，亦可配置於晶片22〇與承載器21〇之間。 此時’晶片220係同時藉由主動散熱元件230以及位於晶 片220上方的散熱器250進行散熱。另外，位於主動散熱 元件230下方之焊球260例如係用以將主動散熱元件23〇 中的熱排出。 I27〇964_〇c/y 值得注意的是，圖5A中所繪示之封裝結構2〇〇b中， 晶片220與主動散熱元件230係分別藉由焊線270而與承 載器210電性連接。然而，在本實施例中，封裝結構2〇〇b 之晶片220亦可透過焊線270以及主動散熱元件23〇而與 承載器210電性連接。 請參照圖5B，上述之封裝結構2〇〇1)中的焊線27〇亦 可用凸塊取代之。更詳細地說，封裝結構2_，中的晶片 220與主動散熱元件230係藉由凸塊28〇、290而盥承載9| 训電性連接。其中，凸塊280係連接於晶片 器210之間，而凸塊290係連接於主動散熱元件23〇與晶 片220。之間。換言之，晶片22〇係透過凸塊而直接與 承載器210電性連接，而主動散熱元件23〇係透過晶片挪 以及凸塊280、290而間接與承載器21〇電性連接。者麸， 在封裝結構2_’巾，主動雜元件亦可 承載器電性連接。 思興 综上所述，本發明之封裝結構至少具有下列優點： 1.由於主動散熱元件通電時，與晶片接觸二 的溫度係低於帛二表_溫度，所以絲賴元件之 收晶片的熱。因此’本發明之封裝結構具; 2·本發明之封裝結構中，可於主動散敎 曰 配置-散熱器，以使封裝結構的散熱效率^佳。或曰日片上 3.由於本伽之縣結構有部分料 此可以提高封裝結構的散熱效率β ά球’因 11 1270964 15283twf.doc/y 雖然本發明已以較佳實施例揭露如上，然其並非用以 限^本發明，任何熟習此技藝者，在不麟本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保 範圍當視後附之申請專職_界定者鱗。 … 【圖式簡單說明】(Niu. Among them, the wafer system is configured. In addition, the active heat dissipating component is connected to the wafer, and for the above purpose, the present invention provides an I carrier crystal; UX and - active heat dissipating component. The carrier m is electrically connected to the enchantment. The die is connected to the wafer and electrically connected to the carrier H. The package structure described in 1270964 15283 twf.doc/y further includes an encapsulant which fixes the active heat dissipating component of the wafer to the carrier. The device is, for example, a printed circuit board (PCB). In the above package structure, the active heat dissipating component is, for example, a thermoelectric π component (therm_electric c〇〇ler, TEC) having a first surface and a a second surface. When the active heat dissipating component is energized, the temperature of the first surface is lower than the temperature of the second surface, and the wafer is connected to the first surface of the thermoelectric cooling element. In the above package structure, thermoelectric cooling The material of the element is, for example, a compound of N-type, p-type semiconductor, Bi2Te"pbTe, SiGe, F(4) or c. The package of the phase #Λΐ, the carrier 11 has, for example, a bearing surface and a movement The chip system is disposed on the bearing surface of the carrier and has a majority of the main body; the device is configured to: 3) i. In addition, the package structure includes, for example, a structure, for example, a heat sink, and the active heat dissipating component is oppositely connected. The package 11 has, for example, a carrier surface and a wafer. The active heat dissipation member is disposed on the bearing surface of the carrier 11 and the package structure includes, for example, a plurality of second solder balls, == In addition, the package structure includes, for example, a thermal heater, which is in contact with the wafer. Connected to the 片 film: == includes a plurality of first-welding lines, which are connected between the system and the bearing 15. In addition, the structure is sealed. For example, it further includes a plurality of 1270964 15283 twf.doc/y connections. Another ice through the cymbal and the second bonding wire and the carrier are electrically connected, for example, a plurality of third bonding wires are connected to the active heat dissipating component. And the supporting m, and the connecting structure, for example, further comprising a plurality of first bumps, the system is connected between the wafer and the active heat dissipating component, wherein the component is transmitted through the chip and the second bump and the carrier are electrically connected Sexual connection The method further includes a plurality of third bumps connected between the active heat dissipating component and the carrier. A package structure of the present invention uses an active heat dissipating component having a first surface and a second surface, and is active When the heat dissipating component is energized, the temperature of the first surface in contact with the wafer is lower than the temperature of the second surface, and the first surface of the active heat dissipating 7G component can quickly absorb the heat of the wafer. Therefore, the package structure of the present invention has high heat dissipation. The above and other objects, features, and advantages of the present invention will become more apparent and understood. [Embodiment] FIG. 1 is a cross-sectional view showing a package structure in accordance with a preferred embodiment of the present invention. The package structure 200 of the embodiment of the present invention includes a carrier 210, a wafer 22, and an active heat dissipating component 23A. The wafer 220 is disposed on the carrier 21A and electrically connected to the carrier 21A. Further, the active heat dissipating component 230 is connected to the wafer 220 and electrically connected to the carrier 210. The package structure 200 described above, for example, further includes an encapsulant 24A that secures the wafer 220 active heat dissipating component 230 to the carrier 21A. The carrier 210 is, for example, a printed circuit board, a substrate, a lead frame or the like. In a preferred embodiment of the invention, the active heat dissipating component 23 is, for example, a thermoelectric cooling element having a first surface 232 and a second surface 234. When the heat dissipating component 230 is energized, the temperature of the first surface 232 is lower than the temperature of the first surface 234, and the wafer 22 is connected to the first surface 232 of the active heat dissipating component 23A. Specifically, the material of the thermoelectric cooling element is, for example, an N-type semiconductor, a p-type semiconductor, Bi2Te3, pbTe, a compound of a core, a compound of C0AS3, or other thermoelectric material. f 2A and FIG. 2B are schematic diagrams showing the principle of heat dissipation of the thermoelectric cooling element. Referring to Figures 2A and 2B, in general, the simplest thermoelectric cooling element is an N-type semiconductor 310 or a p-type semiconductor 32? When the power is applied, the electron of the N-type semiconductor 31G or ? The type semiconductor = the hole will flow in the direction of the arrow and will produce a lower temperature heat absorbing surface 312, 322 and a higher temperature heat sink surface 314, 324. Referring again to the package structure of the embodiment of the present invention, the heat dissipation principle of the thermoelectric cooling element described above is utilized to bring "22 () into contact with the first surface 232 of the active heat dissipating component 230. When the active heat dissipating component 23 () is energized The first surface 232 is used to absorb the heat generated by the wafer 22 to achieve rapid heat dissipation. In order to improve the package structure, the package structure 200 can be added to heat dissipation. The heat generated by the active heat dissipating component 23G, the (10) wire heat dissipating component 23, and the heat generated by the second surface 234 of the 1270964 15283 twf.doc/y are removed from the package structure 2 (8), thereby improving the heat dissipation efficiency of the active heat dissipating component 230. The shape of the active heat dissipating component shown in the figure is only for example, and can be changed to any other form of active heat dissipating component. In a preferred embodiment of the present invention, the carrier 210 has a carrier, for example, 212 An opposite back surface 214, and the wafer 22 is disposed on the carrying surface 212 of the carrier 210, and the active heat dissipating component 230 is disposed on the wafer 220. In addition, the package structure 2 includes, for example, a majority The solder ball 260 is disposed on the back surface 214 of the carrier 21, and the package structure 200 is electrically connected to other components by solder balls 260. It is noted that in this embodiment, it is located below the wafer 22 The solder ball 260 is, for example, a thermal ball, which is used to discharge heat generated by the wafer 22 to further improve the heat dissipation efficiency of the package structure 2 . Of course, the embodiment does not necessarily have to have In the present embodiment, the package structure 200 includes, for example, a plurality of bonding wires 270 ′ connected to the wafer 220 . The package structure 200 further includes a signal ball and a ground ball. Between the carrier 230 and the active heat dissipating component 230 and the carrier 210. In other words, the wafer 22 and the active component 230 are electrically connected to the carrier 21 via the bonding wires 270, respectively. In this embodiment, the circuit design of the active heat dissipating component 23 is such that the anode and the cathode are located on the same surface (for example, the second surface 234), so that the bonding wire 270 can be soldered to the same surface of the active heat dissipating component 23 on 0 1270964 15283 twf.doc/y FIG. 3 is a cross-sectional view showing another mounting structure according to a preferred embodiment of the present invention. Referring to FIG. 3, in the above package structure 2, 'welding line 270 Connected between the wafer 220 and the carrier 230 and between the active thermal element 230 and the carrier 210 (as shown in FIG. 。). However, in this embodiment, the bonding wire 270 can also be connected to the wafer 22 and the carrier. Between 23 turns and between the active heat sink element 230 and the wafer 220. That is, the wafer 22 is electrically connected directly to the carrier 21 via the bonding wire 270, and the active heat dissipating component 230 is indirectly electrically connected to the carrier 210 through the wafer 220 and the bonding wire 27〇. "" Figure 4 is a cross-sectional view showing still another package structure in accordance with a preferred embodiment of the present invention. Referring to FIG. 4, which is similar to FIG. 1, the difference is in the manner in which the wafer 220 and the active heat dissipating component 230 are electrically connected to the carrier 21. In more detail, the package structure 2A illustrated in FIG. 4 includes a plurality of bumps 280, 290, wherein the bumps 280 are connected between the wafer 22 and the carrier 210, and the bumps 290 are connected. Between the active heat dissipating component and the carrier 210. Figure 5A and Figure 5 are cross-sectional views showing two further package structures in accordance with a preferred embodiment of the present invention. Referring to FIG. 5A, in a preferred embodiment of the present invention, the active heat dissipating component 230 may be disposed between the wafer 22 and the carrier 21A in addition to being disposed on the wafer 220 as shown in FIG. At this time, the wafer 220 is simultaneously dissipated by the active heat dissipating component 230 and the heat sink 250 located above the wafer 220. Additionally, solder balls 260 underlying active heat dissipating elements 230 are used, for example, to discharge heat from active heat dissipating elements 23A. I27〇964_〇c/y It should be noted that in the package structure 2〇〇b illustrated in FIG. 5A, the wafer 220 and the active heat dissipating component 230 are electrically connected to the carrier 210 by the bonding wires 270, respectively. . However, in this embodiment, the wafer 220 of the package structure 2〇〇b can also be electrically connected to the carrier 210 through the bonding wire 270 and the active heat dissipating component 23〇. Referring to FIG. 5B, the bonding wires 27〇 in the above package structure 2〇〇1) may also be replaced by bumps. In more detail, the wafer 220 and the active heat dissipating component 230 in the package structure 2_ are electrically connected by the bumps 28, 290. The bumps 280 are connected between the wafers 210, and the bumps 290 are connected to the active heat dissipating components 23 and 220. between. In other words, the wafer 22 is electrically connected to the carrier 210 directly through the bumps, and the active heat dissipating component 23 is electrically connected to the carrier 21 indirectly through the wafer and the bumps 280 and 290. In the package structure 2_' towel, the active hybrid component can also be electrically connected to the carrier. In summary, the package structure of the present invention has at least the following advantages: 1. Since the temperature of the contact with the wafer is lower than the temperature of the wafer when the active heat dissipating component is energized, the heat of the wafer of the component is removed. . Therefore, the package structure of the present invention; 2. In the package structure of the present invention, the heat sink can be disposed on the active heat sink to improve the heat dissipation efficiency of the package structure. Or on the next day. 3. Because of the structure of the county of Benja, it is expected that the heat dissipation efficiency of the package structure can be improved. β ά球' Because 11 1270964 15283 twf.doc/y Although the present invention has been disclosed above in the preferred embodiment, it is not In order to limit the invention, any person skilled in the art can make some changes and refinements within the spirit and scope of the invention, and therefore the scope of the invention is attached to the application full-time _ definer scale . ... [Simple description of the schema]

圖1係繪不依照本發明一較佳實施例所述之一 結構的剖面圖。 I 圖2A與圖2B綠示為熱電致冷元件的散熱原理示意 圖3係繪是依照本發明一較佳實施例所述之另 裝結構之剖面圖。 一種封BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing a structure which is not in accordance with a preferred embodiment of the present invention. I Fig. 2A and Fig. 2B are green diagrams showing the principle of heat dissipation of the thermoelectric cooling element. Fig. 3 is a cross-sectional view showing an alternative structure according to a preferred embodiment of the present invention. a seal

圖4係繪示依照本發明一 裝結構的剖面圖。 較佳實施例所述之再一種封 之又圖插繪示依照本發明一較佳實施例所述 之又一種封裝結構的剖面圖。 【主要元件符號說明】Figure 4 is a cross-sectional view showing a mounting structure in accordance with the present invention. Still another embodiment of the preferred embodiment further illustrates a cross-sectional view of yet another package structure in accordance with a preferred embodiment of the present invention. [Main component symbol description]

200、200a、2〇〇b ··封裝結構 21〇:承載器 212 ·承載面 214 :背面 220 ·晶片 230 :主動散熱元件 232 :第一表面 234:第二表面 12 1270964 15283twf.doc/y 240 :封裝膠體 250 :散熱器 260 :焊球 270 :焊線 280、290 :凸塊 310 : N型半導體 312、322 ··吸熱面 314、324 :散熱面 320 : P型半導體 330 :電源200, 200a, 2〇〇b ··Package structure 21〇: carrier 212 · bearing surface 214 : back surface 220 · wafer 230 : active heat dissipation element 232 : first surface 234 : second surface 12 1270964 15283twf.doc / y 240 : package colloid 250 : heat sink 260 : solder ball 270 : bonding wire 280 , 290 : bump 310 : N type semiconductor 312 , 322 · · heat absorption surface 314 , 324 : heat dissipation surface 320 : P type semiconductor 330 : power supply

Claims (1)

12^70.d，/006 ’ 95.1.13 卜I月ίέ?日修欲)史界. 十、申請專利範圍： 1. 一種封裝結構，包括： 一承載器； 一晶片，配置於該承載器上，且與該承載器電性連 接，其中該晶片具有一主動表面； 一主動散熱元件，與該承載器電性連接，其中該主動 散熱元件為一熱電致冷元件，該熱電致冷元件具有一第一 表面與一第二表面，而該主動散熱元件通電時，該第一表 面之溫度係低於該第二表面之溫度，且該晶片之該主動表 面係與該熱電致冷元件之該第一表面相接；以及 一封裝膠體，係將該晶片、該主動散熱元件固著於該 承載器上。 2. 如申請專利範圍第1項所述之封裝結構，其中該承 載器包括印刷電路板。 3. 如申請專利範圍第1項所述之封裝結構，其中該熱 電致冷元件之材質包括N型半導體或P型半導體。 4. 如申請專利範圍第1項所述之封裝結構，其中該熱 電致冷元件之材質包括Bi2Te3、PbTe、SiGe、Fe2Si或CoAs3 之化合物。 5. 如申請專利範圍第1項所述之封裝結構，其中該承 載器具有一承載面以及一相對之背面，該晶片係配置於該 承載器之該承載表面上，且該主動散熱元件係配置於該晶 片上。 6. 如申請專利範圍第5項所述之封裝結構，更包括多 數個第一焊球，配置於該承載器的該背面上。 14 1270編 twfl.doc/006 95.1.13 7. 如申請專利範圍第5項所述之封裝結構，更包括一 第一散熱器，與該主動散熱元件接觸。 8. 如申請專利範圍第1項所述之封裝結構，其中該承 載器具有一承載面以及一相對之背面，該主動散熱元件係 配置於該承載器之該承載面與該晶片之間。 9. 如申請專利範圍第8項所述之封裝結構，更包括多 數個第二焊球，配置於該承載器的該背面上。 10. 如申請專利範圍第8項所述之封裝結構，更包括一 第二散熱器，與該晶片接觸。 11. 如申請專利範圍第1項所述之封裝結構，更包括多 數個第一焊線，連接於該晶片與該承載器之間。 12. 如申請專利範圍第11項所述之封裝結構，更包括 多數個第二焊線，連接於該晶片與該主動散熱元件之間， 其中該主動散熱元件係透過該晶片以及該些第二焊線與該 承載器電性連接。 13. 如申請專利範圍第1項所述之封裝結構，更包括多 數個第三焊線，連接於該主動散熱元件與該承載器之間。 14. 如申請專利範圍第1項所述之封裝結構，更包括多 數個第一凸塊，連接於該晶片與該承載器之間。 15. 如申請專利範圍第14項所述之封裝結構，更包括 多數個第二凸塊，連接於該晶片與該主動散熱元件之間， 其中該主動散熱元件係透過該晶片以及該些第二凸塊與該 承載器電性連接。 16. 如申請專利範圍第1項所述之封裝結構，更包括多 15 1270% 斗 twfl.doc/006 95.1.13 數個第三凸塊，連接於該主動散熱元件與該承載器之間。 17.如申請專利範圍第1項所述之封裝結構，其中該封 裝膠體係暴露出部分該主動散熱元件的該第二表面。 1612^70.d, /006 '95.1.13 卜I月έ?日修欲)史界. X. Patent application scope: 1. A package structure, comprising: a carrier; a wafer, disposed on the carrier And electrically connected to the carrier, wherein the wafer has an active surface; an active heat dissipating component is electrically connected to the carrier, wherein the active heat dissipating component is a thermoelectric cooling component, and the thermoelectric cooling component has a first surface and a second surface, and when the active heat dissipating component is energized, the temperature of the first surface is lower than the temperature of the second surface, and the active surface of the wafer and the thermoelectric cooling element The first surface is in contact; and an encapsulant is used to fix the wafer and the active heat dissipating component to the carrier. 2. The package structure of claim 1, wherein the carrier comprises a printed circuit board. 3. The package structure of claim 1, wherein the material of the thermoelectric cooling element comprises an N-type semiconductor or a P-type semiconductor. 4. The package structure of claim 1, wherein the material of the thermoelectric cooling element comprises a compound of Bi2Te3, PbTe, SiGe, Fe2Si or CoAs3. 5. The package structure of claim 1, wherein the carrier has a bearing surface and an opposite back surface, the wafer is disposed on the bearing surface of the carrier, and the active heat dissipating component is disposed on On the wafer. 6. The package structure of claim 5, further comprising a plurality of first solder balls disposed on the back surface of the carrier. 14 1270 twfl.doc/006 95.1.13 7. The package structure of claim 5, further comprising a first heat sink in contact with the active heat dissipating component. 8. The package structure of claim 1, wherein the carrier has a bearing surface and an opposite back surface, the active heat dissipating component being disposed between the bearing surface of the carrier and the wafer. 9. The package structure of claim 8 further comprising a plurality of second solder balls disposed on the back surface of the carrier. 10. The package structure of claim 8 further comprising a second heat sink in contact with the wafer. 11. The package structure of claim 1, further comprising a plurality of first bonding wires connected between the wafer and the carrier. 12. The package structure of claim 11, further comprising a plurality of second bonding wires connected between the wafer and the active heat dissipating component, wherein the active heat dissipating component passes through the wafer and the second The bonding wire is electrically connected to the carrier. 13. The package structure of claim 1, further comprising a plurality of third bonding wires connected between the active heat dissipating component and the carrier. 14. The package structure of claim 1, further comprising a plurality of first bumps connected between the wafer and the carrier. 15. The package structure of claim 14, further comprising a plurality of second bumps connected between the wafer and the active heat dissipating component, wherein the active heat dissipating component passes through the wafer and the second The bump is electrically connected to the carrier. 16. The package structure as claimed in claim 1, further comprising a plurality of 1 1 270% twfl.doc/006 95.1.13 a plurality of third bumps connected between the active heat dissipating component and the carrier. 17. The package of claim 1, wherein the package system exposes a portion of the second surface of the active heat dissipating component. 16
TW093138692A 2004-12-14 2004-12-14 Package structure TWI270964B (en)

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