TWM593659U - Packaging structure for directly exporting thermal energy of electronic components - Google Patents

Abstract

To provide a packaging structure for directly exporting the heat energy of electronic components, which mainly includes an insulating layer, electronic components and two extraction electrodes; the electronic components are heating elements or thermoelectric separation elements, wherein one extraction electrode and the electronic component are integrated in a stacked manner and constitute each other Electrically connected, the other lead-out electrode is separated from the stacked lead-out electrode and the electronic component by an appropriate interval, the other lead-out electrode is electrically connected to the electronic component through an electrical connection, and the insulating layer simultaneously encapsulates and fixes the electronic component and the two The lead-out electrodes can be filled with an insulating layer, and the outward-facing surfaces of the two lead-out electrodes are exposed to the insulating layer, so that the lead-out electrodes can be directly fixed on the external heat dissipation device, and heat can be dissipated by direct conduction. , And can effectively improve the cooling efficiency.

Description

Packaging structure for directly exporting thermal energy of electronic components

能有效提升散熱效率。 A component packaging structure, especially a packaging structure that directly derives the thermal energy of electronic components. More specifically, the thermal energy and electrical energy of the components are shunted by a special process and structural design to achieve a direct heat dissipation and conductive packaging structure. Moreover, the chip is isolated from the lead electrode by an insulating material to achieve an insulating effect. This package structure element can achieve heat dissipation by direct conduction,

Can effectively improve the heat dissipation efficiency.

Most of the existing heat-generating and thermoelectric separation element packaging structures use metal substrates or ceramic substrates for chip or component packaging. The metal substrate needs to be added with an insulating layer to isolate the circuit from the heat-dissipating substrate, which will cause a large thermal resistance.

Referring to FIG. 1, FIG. 1 is a schematic diagram of a package structure of a thermoelectric separation device of the conventional technology. As shown in FIG. 1, the conventional thermoelectric separation element package structure includes a metal layer 1a, an insulating layer 2a, and heat generation and thermoelectric separation elements such as a wafer 3a, and the positive and negative electrodes on the top and bottom surfaces of the wafer 3a are sequentially Connected to the two external electrodes 5a, 5b, the two external electrodes 5a, 5b are disposed on the insulating layer 2b and separated by a distance, through the arrangement of the insulating layer 2b, so that the two external electrodes 5a, 5b will not short circuit.

However, since the insulating layer 2b is disposed between the metal layer 1a and the wafer 3a, when the wafer 3a operates, the heat energy generated by the wafer 3a must be conducted to the metal layer 1a through the insulating 2a, however, the thermal conductivity of the insulating layer 2b is not comparable In order to improve the thermal conductivity of the insulating layer, although materials with good thermal conductivity such as aluminum oxide, aluminum nitride, and diamond-like membrane (DLC) can be used as the insulating layer, the composition of such materials This material is also quite high; in addition, although this kind of material has better thermal conductivity, it is still an insulating material, and the external electrode using metal material still has different material characteristics. Therefore, the structure and material characteristics of the combination of two heterogeneous materials, its Reliability is still insufficient, so there is a need for a thermoelectric separation device package structure that can reduce material cost and improve heat dissipation capacity by eliminating the thermal resistance of the device.

In addition, in the prior art, multiple heating elements (such as integrated circuits) and multiple electronic components such as thermoelectric separation elements are also electrically connected to the circuit board at the same time, and the surface of the circuit board is also coated with an insulating layer such as solder mask green paint This will cause the problem just as mentioned in the previous paragraph, that is, the heat energy accumulated in the circuit board, the heat energy accumulated in the circuit board affects the electronic component, and finally causes the electronic component to overheat and affect its performance.

A packaging structure that directly derives the heat energy of electronic components is provided, and a special manufacturing process and structural design are used to shunt its thermal energy and electrical energy to achieve a directly thermally conductive packaging structure.

The electronic components are separated from the lead electrodes by insulating materials and fixed; part of the insulating layer serves as a barrier that can block the first electrode layer and the second electrode layer, whereby the thermoelectrically separated device packaging structure can not penetrate the insulating layer It is directly or indirectly fixed on the heat dissipation device, so that the thermal energy of the electronic component can be directly or instantaneously conducted on the heat dissipation device, so the additional thermal resistance between the electronic component and the heat dissipation device is subtracted, so as to achieve the reduction of material cost and improvement Package element reliability heat generation and thermoelectric separation element package structure.

To achieve the above purpose, the exemplary technical methods proposed include: an insulating layer, an electronic component and two extraction electrodes (P and N electrodes), the electronic component may be a heating element or a thermoelectric separation element; the electronic components are stacked Is formed on an extraction electrode and forms an electrical connection. The thermal energy generated by the electronic component is directly conducted to the extraction electrode. The other extraction electrode and the extraction electrode are separated from the electronic component by a distance and are electrically connected to The chip constitutes an electrical connection, and the insulating layer simultaneously fixes the electronic component and the Two lead-out electrodes, and the outward-facing side of the two lead-out electrodes and the side of the thermal energy generated by the thermoelectric separation element are not covered by the insulating layer.

In one embodiment, the gap can be filled by a portion of the insulating layer, and serves as a barrier to the first electrode layer and the second electrode layer.

In one embodiment, the extraction electrode has at least a single-layer structure, and the extraction electrode and the heat-generating or thermoelectric separation element are fixed on the extraction electrode circuit by welding or other adhesive methods.

In one embodiment, the sides of the two lead-out electrodes that are not covered by the insulating layer are coplanar, which is convenient for adhesion and bonding with external heat dissipation devices.

In one embodiment, the electrical connection method is wire bonding, or the chip and the lead electrode are electrically connected by a stacking method of conductive metals (blocks), and the conductive members are connected and fixed by welding or adhesion .

In a preferred embodiment, it further includes a conductive pad relative to the other lead-out electrode, the conductive pad is disposed on the conductive members, and the outer side of the conductive pad is not affected by the insulating layer Covered, a conductive post is further provided on the lead-out electrode, the conductive post is separated from the thermoelectric separation element by a distance, the bottom end of the conductive post is fixed and electrically connected to the lead-out electrode, and the top end of the conductive post is at least free from The covering of the insulating layer thereby exposes a part of the extraction electrode on both sides of the insulating layer, thereby facilitating connection with external circuits or components.

1: Solar chip

2: Insulation and heat conduction board

11: N-type electrode

13: P-type electrode

31: First electrode layer

33: Welding adhesive layer

41: Second electrode layer

5: Insulation

61, 63, 65: conductive parts

67: Conductive column

7: circuit board

71, 73: external electrode

75: Electronic components

8: Heat sink

1a: metal layer

2a: Insulation

3a: chip

5a, 5b: external electrode

FIG. 1 is a schematic diagram of a package structure of a thermoelectric separation device of the conventional technology.

FIG. 2 is a schematic diagram showing a packaged solar wafer according to the described embodiment.

FIG. 3 is a schematic diagram showing a conductive member according to the described embodiment.

FIG. 4 is a schematic diagram showing that two electrodes are located on both sides of an insulating layer according to the described embodiment.

5 is a schematic diagram showing an integrated package according to the described embodiment.

FIG. 6 is a schematic diagram showing a heat dissipation device according to the structure of FIG. 5.

7 is a schematic diagram showing an integrated package according to another embodiment described.

FIG. 8 is a schematic diagram showing that a heat dissipation device is further provided according to the structure of FIG. 7.

The following describes the embodiment of the present invention in more detail with the help of diagrams and component symbols, so that those skilled in the art can implement it after studying this manual.

The provided packaging structure for directly deriving the heat energy of the electronic component includes an insulating layer, an electronic component and two lead-out electrodes, wherein the electronic component is a heating element or a thermoelectric separation element.

One of the extraction electrodes and the electronic components are integrated in a stacked manner and form an electrical connection with each other. The other extraction electrode is separated from the overlapping extraction electrodes and the electronic components by an appropriate distance. The other extraction electrode is electrically connected It forms an electrical connection with the electronic component. The insulating layer encapsulates the fixed chip and the two lead-out electrodes at the same time. The gap can be more occupied by the material of the insulating layer. The outward-facing sides of the two lead-out electrodes are exposed to the insulating layer.

The heating element is a processor, memory, control element or other heating element; the thermoelectric separation element is a solar cell (Solar cell), diode (Diode), metal oxide semiconductor field effect (MOSFET) insulated gate bipolar transistor ( IGBT), light emitting diode (LED) or other thermoelectric separation elements.

Referring to FIG. 2, FIG. 2 is a schematic diagram showing a packaged solar chip according to the described embodiment. As shown in the embodiment of FIG. 2, the electronic component uses the solar wafer 1 as an example for illustration. The top and bottom surfaces of the solar wafer 1 have N-type electrodes 11 and P-type electrodes 13 respectively; if the bottom surface of the solar wafer 1 It is the main heating surface when the solar wafer 1 is working. The first electrode layer 31 (extraction electrode) can be electrically connected to the P-type electrode 13 of the solar wafer 1 through the welding adhesive layer 33; the extraction electrode can be as shown in FIG. 2 The first electrode layer 31 of a single-layer structure; in other words, the first electrode layer 31 is a single-layer structure in the form of a sheet, a plate or a bulk.

Preferably, the first electrode layer 31 is in face-to-face contact with the solar wafer 1 to dissipate heat through a sufficient heat dissipation area; it is important to note that the P-type electrode 13 and the first electrode layer 31 on the main heating surface of the solar wafer 1 There is no dielectric layer between them, but they can be electrically connected through full-surface welding or adhered through the entire surface to form an electrical connection, that is, between the first electrode layer 31 and the solar wafer 1 can be directly or indirectly Connection and fixation, so that the thermal energy generated by the solar chip is directly transmitted to the first electrode layer.

The solar wafer 1 and the first electrode layer 31 and the second electrode layer 41 need to be separated by a gap, and the second electrode layer 41 and the N-type electrode 11 on the top surface of the solar wafer 1 are connected by wire bonding. Sexual connection to form an electrical connection.

The above-mentioned solar wafer 1, the first electrode layer 31 and the second electrode layer 41 are all encapsulated by the insulating layer 5. The space between the first electrode layer 31 and the second electrode layer 41 is also occupied by the insulating layer 5, and The insulating layer barrier is provided between the first electrode layer 31 and the second electrode layer 41 to avoid short circuit, and the same side of the first electrode layer 31 and the second electrode layer 41 is not covered by the insulating layer 5 and exposed Outside the insulating layer 5; preferably, the side of the first electrode layer 31 and the second electrode layer 41 on the same side is coplanar, and is more in the same plane as the insulating layer, so as to facilitate the subsequent stable connection with the heat dissipation device.

One of the characteristics of the packaging structure shown in the above embodiment is that the insulating layer 5 is used as a structural layer for simultaneously fixing the solar wafer 1, the first electrode layer 31 and the second electrode layer 41. In the first embodiment, the solar wafer The main heat dissipation side of the solar chip, the other parts of the solar chip are all insulated Covering, but not limited to this, if the insulating layer does not cover the top surface of the solar wafer but can still fix the thermoelectric separation element, it is also one of the methods to be protected by the new type.

In addition to the packaging effect, the insulating layer also uses a part of the insulating layer as a barrier to block the first electrode layer and the second electrode layer, that is, the first electrode layer and the second electrode layer except the first electrode layer and the second electrode layer are exposed Outside of the plane, the other parts of the first electrode layer and the second electrode layer are covered and fixed by the insulating layer.

The new type directly fixes the solar chip on the metal electrode layer through the welding adhesive layer. Obviously, the bonding of the same series of materials is usually better than the bonding of the heterogeneous materials, so the new type uses the first (two) electrode layer to bond to the metal The heat dissipation base can effectively remove the heat energy of electronic components and improve the reliability of the packaging structure.

Referring to FIG. 3, FIG. 3 is a schematic diagram showing a conductive member according to the described embodiment. The setting principle of the second embodiment is basically the same as that of the first embodiment, except that the second embodiment provides an electrical connection method different from that of the first embodiment. The first embodiment uses wire bonding for wire bonding, and the second embodiment For example, the second electrode layer 41 is electrically connected to the N-type electrode 11 of the solar wafer 1 through one or more conductive members.

If multiple conductive members 61, 63 are used, they can be electrically connected to the N-type electrode 11 of the solar wafer 1 by stacking multiple conductive members 61, 63 on the second electrode layer 41, so there will be one The conductive member 61 is to be electrically connected to the N-type electrode 11 of the solar wafer 1, and another conductive member 63 is overlapped between the conductive member 61 and the N-type electrode 11, except for the connection of the conductive members 61, 63 and the wafer electrode Outside of the location, a plurality of conductive members 61, 63 should be separated from the solar wafer 1 (together with the first electrode layer) by an appropriate distance.

Specifically, if two conductive members 61, 63 as shown in FIG. 3 are used, the conductive member 61 directly disposed on the second electrode layer 41 needs to have an appropriate height, so that the conductive member 61 and the second electrode The total height of layer 41 can be the same height as the solar wafer, which is a good practice but not limited to it, that is, it can be as close as possible to the same height, even if it is not the same height, it can also provide a suitable shape of conductivity The component 61 is used to complete the lap; the conductive member 63 disposed on the conductive member 61 has an appropriate horizontal length, so that the two ends of the conductive member 63 can be fixed to the solar wafer 1 and the conductive member 61, the conductive members 61, 63 It is connected and fixed to each other through the welding adhesive layer 33.

Referring to FIG. 4, FIG. 4 is a schematic diagram showing that the two electrodes are located on both sides of the insulating layer according to the described embodiment. In the foregoing two embodiments, the two electrodes of the solar chip are simultaneously led to one side of the insulating layer ( (Bottom side in the figure), in the third embodiment, it is further provided to connect the two electrodes of the solar wafer to both sides of the insulating layer.

In the third embodiment, in addition to stacking conductive members 61 and 63, a conductive member 65 is provided on the second electrode layer 41. The conductive member 65 is disposed on the conductive member 63 and a part of the conductive members 63 and 65 The portion is beyond the top surface of the insulating layer 5, and the conductive members 63 and 65 are also connected and fixed by welding the adhesive layer.

On the first electrode layer 31, a conductive pillar 67 is further provided. The conductive pillar 67 and the solar chip 1 need to be separated by a distance. This distance can be occupied by a part of the insulating layer. One end of the conductive pillar 67 is fixed to the first electrode layer On the other hand, the other end of the conductive member 67 is at least not covered by the insulating layer. Preferably, the top side of the conductive member may be flush or beyond the top surface of the insulating layer; in the third embodiment, the first electrode The area of the layer 31 will be larger than that of the solar wafer. Therefore, the portion of the first electrode layer 31 that exceeds the solar wafer 1 can be provided for the conductive pillar 67.

Although the above-mentioned embodiments are all related to the packaging of a single electronic component, it is not limited to the packaging of a single electronic component, and a circuit board can be used to achieve a series and parallel circuit layout application of multiple electronic components.

Referring to FIG. 5, FIG. 5 is a schematic diagram showing a direct thermal conduction structure of parts and components of an insulating layer package circuit board according to the described embodiment. As shown in FIG. 5, the packaging structure that directly derives the heat energy of the electronic component includes the insulating layer 5, the component direct thermal conduction structure and the circuit board 7, the circuit board 7 is adjacent to the component direct thermal conduction structure; the component of the component direct thermal conduction structure is in this embodiment The middle is the thermoelectric separation wafer.

The direct heat conduction structure of the device is as in the previous embodiment, and also includes a thermoelectric separation wafer such as the solar wafer 1 and the first electrode layer and the second electrode layers 31 and 33 (two extraction electrodes), the solar wafer 1 and the first electrode layer and the second electrode The arrangement between the layers 31 and 33 is almost the same as the previous embodiment, and will not be repeated here; only the second electrode layer 33 (another lead electrode) is provided on the circuit board 7, for example, the second electrode layer 33 may be a circuit Conductive pads, conductive bumps or contacts on the board 7 etc.

The circuit board 7 also has two external electrodes 71 and 73. The external electrode 71 and the first electrode layer 31 are electrically connected indirectly or directly by wire bonding electrodes or other electrical connection methods; the second electrode layer 33 and The second electrode layer 33 is electrically connected to the external electrode 73 by its own wire on the circuit board 7.

The insulating layer 5 encapsulates and fixes the solar chip 1, the first electrode layer 31, the second electrode layer 33 and the circuit board 7 at the same time, but the insulating layer 5 does not cover the two external electrodes 71, 73 of the circuit board 7 and the distance of the circuit board 7 On the side of the insulating layer and the side of the first electrode layer 31 away from the insulating layer.

Various electronic components 75 with low power or not easy to store heat can also be provided on the circuit board 7.

In an embodiment, the direct heat conduction structure of the element may be provided in the opening or notch of the circuit board 7; or more than two circuit boards may be provided, in which case an external electrode is provided on each circuit board.

As shown in FIG. 5, the direct heat conduction structure of the element further includes an insulating heat conduction plate 2, which is disposed below the first electrode layer 31 to dissipate heat energy; In addition, the insulating heat conduction plate and the 8 circuit board are not subjected to The side covered by the insulating layer is coplanar.

6, FIG. 6 is a schematic diagram showing a heat dissipation device according to the structure of FIG. 5, as shown in FIG. 6, FIG. 6 further provides a heat dissipation device 8, the heat dissipation device 8 is attached to the insulating and thermally conductive plate 2 away from the insulating layer The side of 5, or the heat dissipation device 8 is further attached to the side of the circuit board 7 away from the insulating layer 5.

Referring to FIGS. 7 and 8, the structures of FIGS. 7 and 8 are respectively the same as those of FIGS. 5 and 6, except that the first electrode layer 31 of FIGS. 7 and 8 is directly attached to the heat dissipation device 8, that is, not An insulating heat conduction plate 2 needs to be provided; the above-mentioned heat dissipation device 8 may be a heat dissipation metal plate.

In addition to integrating the thermoelectric separation element and the heating element, other control elements can also be integrated, and the design and application of the intelligent power integration module can be achieved by electrical connection.

The above is only for explaining the preferred embodiment of the present invention, and it is not an attempt to restrict the present invention in any form, so that any modifications or changes made to the novel under the same spirit of the novel , Should still be included in the scope of the protection of this new model.

1: chip

11: N-type electrode

13: P-type electrode

31: First electrode layer

33: Welding adhesive layer

41: Second electrode layer

5: Insulation

Claims (16)

A packaging structure for directly exporting heat energy of an electronic component, comprising: an insulating layer, at least one electronic component and two lead-out electrodes, at least one heating side of the at least one electronic component is substantially in contact and fixed on a lead-out electrode and constitutes electrical properties Connection, the heat energy generated by the at least one electronic component is directly conducted to the lead-out electrode, the other lead-out electrode and the lead-out electrode are separated from the at least one electronic component by a distance, and are formed with the at least one electronic component through an electrical connection Electrically connected, the insulating layer simultaneously encapsulates and fixes the at least one electronic component and the two lead-out electrodes, and the outward-facing side of the two lead-out electrodes and the side of the at least one electronic component that generates heat energy are not affected by the insulating layer Covering, wherein the at least one electronic component is a heating element or a thermoelectric separation element. The packaging structure for directly deriving heat energy of an electronic component as described in claim 1, wherein the gap can be filled with an insulating layer. The packaging structure for directly deriving heat energy of an electronic component as described in claim 1, wherein the extraction electrode has at least a single-layer structure. The packaging structure for directly deriving the heat energy of an electronic component as described in claim 1 or 3, wherein the lead-out electrode and the thermoelectric separation component are bonded by solid crystal such as welding, silver sintering or ultrasonic bonding

The connection is fixed. The packaging structure for directly deriving heat energy of an electronic component as described in claim 1, wherein the sides of the two extraction electrodes not covered by the insulating layer are coplanar. The packaging structure for directly deriving thermal energy of an electronic component as described in claim 1, wherein the electrical connection method is wire bonding, soldering, etc. to achieve electrical connection. The packaging structure for directly deriving the heat energy of an electronic component as described in claim 1, wherein the electrical connection method is to make electrical connection through a conductive member and using wire bonding, soldering, etc. The packaging structure for directly deriving the thermal energy of an electronic component according to claim 1, wherein the electrical connection method is to electrically connect the at least one electronic component and the other lead-out electrode through a stacking method of a plurality of conductive members, the The conductive parts are connected and fixed by welding or adhesion. The packaging structure for directly deriving the thermal energy of an electronic component as described in claim 8, further comprising a conductive pad relative to the other lead-out electrode, the conductive pad being disposed on the conductive members, and the conductive pad The outward-facing side is not covered by an insulating layer. A conductive post is further provided on the lead-out electrode. The conductive post is separated from the at least one electronic component by a distance. The bottom end of the conductive post is fixed and electrically connected to the lead-out The electrode and the top of the conductive pillar are not covered by the insulating layer at least. The packaging structure for directly deriving thermal energy of an electronic component as described in claim 9, wherein the distance can be occupied by a part of the insulating layer. A thermoelectrically separated component packaging structure, wherein it further includes at least two circuit boards, the insulating layer simultaneously encapsulates and fixes the electronic components and the at least one circuit board, and the at least one circuit board is formed between the electronic components Electrical connection. A packaging structure for directly exporting thermal energy of electronic components, including: an insulating layer; a direct thermal conduction structure of components, including at least one electronic component and two lead-out electrodes, at least one heating side of the at least one electronic component is substantially in contact and fixed to a lead-out Above the electrode, and the lead-out electrode is electrically connected to the positive electrode of the at least one electronic component, the at least The thermal energy generated by an electronic component is directly conducted to the lead-out electrode, and the other lead-out electrode is spaced apart from the lead-out electrode and the at least one electronic component and forms an electrical connection with the negative electrode of the at least one electronic component through an electrical connection Connection; and at least one circuit board, adjacent to the direct thermal conductive structure of the device, the other lead electrode is provided on the at least one circuit board, the at least one circuit board has two external electrodes, the two external electrodes through the at least A wire circuit of a circuit board is electrically connected to the two lead-out electrodes; wherein, the insulating layer simultaneously encapsulates and fixes the at least one electronic component, the two lead-out electrodes and the part of the at least one circuit board, but the insulating layer is not covered Two external electrodes of the at least one circuit board. The packaging structure for directly deriving heat energy of an electronic component according to claim 11, wherein the component direct thermal conduction structure further includes an insulating thermal conduction plate, and the insulating thermal conduction plate is disposed below the extraction electrode. The packaging structure for directly deriving the thermal energy of an electronic component according to claim 12, wherein a side of the insulated heat conductive plate and the at least one circuit board not covered by the insulating layer is coplanar. The packaging structure for directly deriving thermal energy of an electronic component according to claim 12, further comprising a heat dissipating metal plate attached to one side of the insulating heat conducting plate, or to the insulating heat conducting plate and the at least The same side of a circuit board. The packaging structure for directly deriving thermal energy of an electronic component according to claim 11, wherein the side of the lead-out electrode and the at least one circuit board not covered by the insulating layer is coplanar. The packaging structure for directly deriving thermal energy of an electronic component according to claim 15, further comprising a heat dissipating metal plate directly attached to the lead-out electrode, or the heat-dissipating metal plate is attached to the lead-out electrode and The same side of the at least one circuit board.

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