TWI270089B - Method for manufacturing varistor with phosphate insulation layer - Google Patents

Method for manufacturing varistor with phosphate insulation layer Download PDF

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Publication number
TWI270089B
TWI270089B TW90132693A TW90132693A TWI270089B TW I270089 B TWI270089 B TW I270089B TW 90132693 A TW90132693 A TW 90132693A TW 90132693 A TW90132693 A TW 90132693A TW I270089 B TWI270089 B TW I270089B
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Taiwan
Prior art keywords
varistor
phosphate
insulating layer
layer
varistor body
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TW90132693A
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Chinese (zh)
Inventor
Chien-Liamg Wu
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Thinking Electronic Ind Co Ltd
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Abstract

The present invention relates to a method for manufacturing a varistor with phosphate insulation layer and a structure thereof, wherein an insulation layer is formed on a surface of a body of the varistor except the areas where terminal electrodes of the varistor are arranged. The insulation layer serves to prevent metal ions of electroplating solution from attaching to the varistor body so as to protect the varistor body, except the terminal electrodes, from being electroplated. Since the insulation layer does not cause direct corrosive reaction with the varistor body, the surface of the varistor body can maintain even and flat, and electroplating at of the areas where non terminal electrodes of the varistor are located can be effectively avoided, whereby yield of the manufacturing process for varistors can be raised.

Description

1270089 五、發明說明(f 本^月係關於種具鱗酸鹽絕緣層的變阻器製法,尤 曰:種可確實避免變㈣本體的非端電極位置於製程中受 =電鏟,同時亦可保持變阻器表面平整的變阻器製造方1270089 V. Description of invention (f) This is a method for producing a varistor with a scale insulation layer. In particular, the species can be avoided. (4) The non-terminal electrode position of the body is controlled by the electric shovel during the process, and can also be maintained. Varistor surface varistor manufacturer

λ有& U k中’變阻器端電極的電鍍步驟為後段 I程’為避免該變阻器本體與端電極同時被電鍍,故而各 目關廠商乃相繼推出各種防護製程或裝置,以防止變阻哭 本體遭電鍍而解決製程良率過低的問題。 D 士美國第4, 140’ 551號專利案揭露的技術,使用鱗酸 j及其組成物’可與金屬物產生反應生成保護膜,故適用 乾圍上有所限制。 又’歐洲專利公告第_678〇號W,〇716429號 垒、A3以及美國第5’614’074號、帛5, 757, 263號專利 ”,其主要利用磷酸與變阻器的陶瓷體作用反應,以於該 變阻器的料體表面形成錢鋅絕緣層,料行後續電2 ^業然此一製程方法的缺點係使變阻器與磷酸反應,在 阻器表面形成腐姓的痕跡’且於進行電鑛作業時,該變 阻器表面仍會被鍍上金屬層,故其不具完全的隔絕效果, 士夕卜觀上會有明顯地形成崎喂表面,{以,Λ一製作變阻 器的方式仍存在缺陷。 再者,於美國公告第6,214,685號專利案所揭示的製 程方法係利用磷酸鋅沈積於陶瓷體表面,以同樣於陶瓷體 表面形成一絕緣層,故可保護變阻器本體以順利進行後續 的電鍍作業,由於磷酸辞沈積於陶瓷體表面,而不與陶瓷 本滅張尺度適用中國國家標準(CNs)w規格⑵“撕λ has & U k 'the step of plating the varistor terminal electrode is the latter stage I.' In order to avoid the varistor body and the terminal electrode being electroplated at the same time, each manufacturer has introduced various protection processes or devices to prevent the resistance from crying. The body is plated to solve the problem of low process yield. The technique disclosed in U.S. Patent No. 4,140, 551, the use of squamous acid j and its composition ' reacts with a metal substance to form a protective film, so that it is limited in the application of the dry circumference. Also, 'European Patent Publication No. _678 No. W, No. 716429, A3, and US Patent No. 5'614'074, No. 5, 757, 263, which mainly utilizes the reaction of phosphoric acid with a ceramic body of a varistor. In order to form a zinc-zinc insulating layer on the surface of the material of the varistor, it is necessary to follow-up electricity. The disadvantage of this process method is that the varistor reacts with phosphoric acid to form a trace of rot on the surface of the resistor. During operation, the surface of the varistor will still be plated with a metal layer, so it does not have a complete insulation effect. The surface of the varistor will obviously form a surface of the smear, and there is still a defect in the way of making a varistor. The process method disclosed in U.S. Patent No. 6,214,685 discloses the use of zinc phosphate deposited on the surface of the ceramic body to form an insulating layer on the surface of the ceramic body, so that the varistor body can be protected for subsequent subsequent plating operations. Phosphoric acid is deposited on the surface of the ceramic body, and is not applicable to the Chinese National Standard (CNs) w specification (2)

^---------------- (請先閱讀背面之注意事項再填寫本頁)^---------------- (Please read the notes on the back and fill out this page)

1270089 A7 B7 五、發明說明(>) 3應,故此製程方式已可改善前述專利缺點,即該 ^且益表面可保持平整,惟進行電鍍時,仍容易在變阻器 、义面鍍上金屬,同樣無法達到完全絕緣的效果。 由上述可知,目前製作變阻器製程中的電鑛作業 無法同時兼顧變阻器本體完全不被電鑛,以及保持電 變阻器的完整外形,基於變阻器乃為各式電子電路必備又之 被動70件,因此,其製作品質及良率甚受重視,故針對前 述的缺點,應進一步提出更有效的解決方案。 為此本發明的主要目的係提供一可讓變阻器於電鑛 製程中確實隔離變阻器本體與端電極,僅令端電極接受電 ,作業’並且於作業完成後仍可保持變阻器外觀的平整, 藉此,以大幅提高變阻器生產良率。 欲達上述目的所使用之主要技術手段係令前述製造方 法包含有下述步驟: 一沈積磷酸鹽沈澱物步驟,即先將磷酸鹽溶液保持於 高溫狀態下形成-過飽和溶液,以析出磷酸鹽沈澱物,再 將該磷酸鹽沈澱物沈積於變阻器本體表面上; 一加熱磷酸鹽沈澱物步驟,即對覆蓋於變阻器本體表 面上的磷酸鹽沈澱物加熱,直至其達融熔狀態,即可形^ 一層均勻且結構結實的透明狀絕緣層,該絕緣層具有不被 電鍍液腐蝕的特性; 一電鍍端電極步驟,由於變阻器本體係受該絕緣層包 覆,僅端電極外露故可續行電鍵作業; 上述製程方法係主要保護變阻器本體於端電極進行電 本紙張尺度適用中國國家標準(CNS)A4^i7iI^; 2^公爱 -------卜訂--------線· (請先閱讀背面之注意事項再填寫本頁) 1270089 A7 B7 五、發明說明( 寺使5亥變阻器本體表面形成-不受電鍍液腐蝕的 、、、邑緣層,以確實隔離變阻器本體與電鍍液,故該變阻器本 t成金屬㉟’並且可保持變阻器本體於電鐘作業 結束後,仍具完替的冰兹目 ^ ^ i的外銳’同時,亦可令變阻器本體表面 不電鍍金屬層;蕤_制&‘ 错此一1¾方法即可確實地提高變阻器製 作良率。 為使貝審查委員能進一步瞭解本發明具體之設計及 其他目的,兹附以圖式詳細說明如后: (一)圖式部份: 第圖A D ·係本發明之第一較佳實施例的剖面圖,其 揭示製程流程的步驟。 係本發明之第二較佳實施例的剖面圖,其 揭示製程流程的步驟。 係本發明之第三較佳實施例的剖面圖,其 揭示製程流程的步驟。 係本發明之第四較佳實施例的剖面圖,其 揭示製程流程的步驟。 圖號部份:1270089 A7 B7 V. INSTRUCTIONS (>) 3 should be, therefore, the process method can improve the shortcomings of the aforementioned patents, that is, the surface of the surface can be kept flat, but it is easy to plate the metal on the varistor and the prosthesis when electroplating is performed. It is also impossible to achieve the effect of complete insulation. It can be seen from the above that the current electric ore operation in the process of manufacturing a varistor cannot simultaneously take into account that the varistor body is completely uncharged by electric ore, and maintains the complete shape of the varistor. The varistor is a passive and passive 70 piece for various electronic circuits. Production quality and yield are highly valued, so more effective solutions should be proposed for the aforementioned shortcomings. To this end, the main object of the present invention is to provide a varistor that can surely isolate the varistor body and the terminal electrode during the electric ore process, and only allows the terminal electrode to receive electricity, and can maintain the smoothness of the varistor appearance after the operation is completed. To greatly increase the yield of varistor production. The main technical means used to achieve the above purpose is that the foregoing manufacturing method comprises the following steps: a step of depositing a phosphate precipitate, that is, first maintaining a phosphate solution at a high temperature to form a supersaturated solution to precipitate a phosphate precipitate. And depositing the phosphate precipitate on the surface of the varistor body; a step of heating the phosphate precipitate, that is, heating the phosphate precipitate covering the surface of the varistor body until it reaches a molten state, and then forming a uniform and structurally transparent transparent insulating layer having the property of being not corroded by the plating solution; a step of plating the end electrode, since the varistor is covered by the insulating layer, only the terminal electrode is exposed, so that the key operation can be continued The above process method is mainly to protect the varistor body at the terminal electrode for the standard of the paper. The Chinese National Standard (CNS) A4^i7iI^; 2^ 公爱------- Line · (Please read the note on the back and fill in this page) 1270089 A7 B7 V. Invention Description (The temple makes the surface of the 5H varistor body formed - not corroded by the plating solution, 邑The layer is used to surely isolate the varistor body from the plating solution, so that the varistor is turned into a metal 35' and can maintain the varistor body after the end of the operation of the electric clock, and still has a replacement of the outer edge of the ice sheet. The surface of the varistor body can be not plated with a metal layer; 蕤 制 amp amp 错 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT: (a) Drawings: FIG. AD is a cross-sectional view of a first preferred embodiment of the present invention, showing steps of a process flow. A second preferred embodiment of the present invention A cross-sectional view showing a process flow. A cross-sectional view of a third preferred embodiment of the present invention, showing a process flow. A cross-sectional view of a fourth preferred embodiment of the present invention, showing a process Steps of the process.

第二圖A〜EFigure II~E

第三圖A〜FThird picture A~F

第四圖A〜E (1〇)〜(l〇c)變阻器 (111)陶瓷層 (1 2 )端電極 (14)絕緣層 (16)辉錫層 本創作係為 (1 1)變阻器本體 (1 1 2)金屬層 (1 3)磷酸鹽化合物 (1 5)底鍍層 (1 7)有機材料層 酸鹽絕緣層的變阻器製法及其結 種具磷Fourth Figure A~E (1〇)~(l〇c) Varistor (111) Ceramic Layer (1 2 ) Terminal Electrode (14) Insulation Layer (16) Hui Tin Layer This creation system is (1 1) varistor body ( 1 1 2) Metal layer (1 3) Phosphate compound (1 5) Underplating layer (17) Organic material layered salt layer insulating layer varistor method and its seeding with phosphorus

------------ΛΚ-------^訂--------線· (請先閱讀背面之注意事項再填寫本頁) 1270089 五、發明說明( 要利用該絕緣層隔絕變阻器本體與端電極,以令該變阻哭 本體不受電鍍’藉此提高製作良率;而本發明係 : 變阻器(1 0 ),如第一圖所示,其變阻器本體Q 1 )' 為-由氧化辞為主的金屬氧化物組成,而於變阻器本體 、(n) _的兩端分設-端電極(12),其中該氧化鋅可 以習知陶瓷燒結成型技術,如經加膠、製漿、乾燥、生胚 成型、乾燥、印刷、疊壓、顆粒成型、排膠、^等製= 再加入其他金屬氧化物為添加物,如氧化錳、氧化鎳、# 化鈷等; ”乳 又該金屬氧化物亦可使用有機鹽或無機鹽的方式勢 成,如碳酸鹽或草酸鹽等,經習用之陶竟材料高溫燒莊成 型技術成型;而端電極(i 2)的材f係以金屬銀為主, 其中可適當加入#、赵等貴重金4 ’並可含適量的破璃 貝,而將έ玄等金屬材料製成端電極(1 2 )的势迭方法了 為印刷、沾塗、滾塗、噴塗的方式成型或燒結成型;可 此外,該變阻器的外觀無限制,可為圓盤形、方形、 長方形、圓柱形、中空圓盤形或中空圓柱形等,且變阻哭 的製程形式可為禱模成型或積層方式或其他習用技術所Ζ 達成的方式。 b —首先請參閱第一圖A〜D所示,係為本發明的一較佳 實施例,其中該製程方法包含下述步驟: -沈積«鹽化合物(1 3 )步驟’即先將鱗酸鹽溶 液保持於高溫度下形成-過飽和溶液,以析出磷酸鹽沈澱 物,再將該磷酸鹽沈澱物沈積於變阻器本體(丄丄)夺面 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) ------.------- (請先閱讀背面之注意事項再填寫本頁) «1 ϋ n ** 訂------- 1270089 A7 B7 五、發明說明( 上; 一加熱填酸鹽化合物卩1 ^ 哭 口物(1 3 )步驟,即對覆蓋於變阻 益體(1 1 )表面上的構酸鹽化合物(i 3)加執,直 意 ίΐί融炫狀態’即可形成一層均勾且結構結實的透明狀 (14) ’該絕緣層(14)具有不被電鍍液腐姓 、特',於本貫施例中加熱溫度係可為5 0 CTC- 7 5 0 °C,而加熱時間約為5 — 3 0分鐘; 一電鍍端電極(1 2 )步驟,由於變阻器本體(丄 ;)係受該絕緣層(14)包覆,僅端電極(Η)外露 故可績行電錢作業;於本實施例中該電艘係包含有一底鑛 訂 及-銲錫層(16),而電鍍作業可利用滾鍍 ' 施以7安培8 0分鐘對端電極形成一底鍍層(工 5),如鎳或銅,再以7安培80分鐘,於底鍍層(1 = 銲錫層(16) ’至此完成電鍍端電極 作業;此外亦可以刷鍍法或無電鍍法執行電鍍端 電極(1 2)作業。 再請參閱第二圖Α〜Ε所示,係為本發明另一較佳實 施例’其前段步驟皆相同’惟於最後一步驟再增加入一去 除絕緣層(14)步驟(如第二圖E所示),其以有韻 或無機酸將該絕緣層(丄4 )去除,使該變阻 a)的變阻器本體表面重現。 σ ( 1 ϋ —明再參閱第二圖A〜F所示,係為本發明的第三較佳 實施例/、係承接第二實施例的步驟,即於去除絕緣層 (1 4 )步驟後再增加一形成有機塗膜(1 7)步驟(如 (210 x 297 公釐) 本紙張尺度綱巾關 1270089 )的表面塗佈一有 〇 b )的變阻器本 0 b )的外觀更加 A7 發明說明(么) 第三圖F所不),於變阻器本體( 機塗膜(1 7 ),用以保護變阻器 體(1 1 )表面;藉此以使變阻器、 完善’其中該有機塗膜(1 7)可為亞二酸更, 醋聚合物,環氧樹醋聚合物或其它可作為^=&物、聚 合物’以及含有其它不溶性粉體及適量添加物°之=有機聚 而請參閱第四圖Α〜Ε所示,係為 實施例,其前段製程步驟係與第一實施例相同的 取後再增加—形成有機塗膜(1 7 )步驟(如第四圖^ 不),即於具絕緣層(14)的變阻器本體(工 再形成-有機塗膜(17),藉此,製作此一變 〇c)即可直接省去去除絕緣層(14)的步驟。 由上述可知,本發明藉由變阻器本體表面形成不 鍵液侵#的絕緣層,使變阻器本體表面不電鍍金屬層亦可 保持表面的平舰,㈣與i㈣或電鍍㈣心造成崎 嶇的表面,而影響外觀’是以,本發明確保變阻器於製造 時,大幅提高電鍍後的良率。 因此,本發明之設計符合發明專利之要件,爰依法具 文提出申請。 本紙張尺度剌巾關家標準(CNS)A4^------------ΛΚ-------^定--------Line· (Please read the notes on the back and fill out this page) 1270089 V. Invention Description (The insulating layer is used to isolate the varistor body and the terminal electrode so that the varistor body is not subjected to electroplating, thereby improving the fabrication yield; and the present invention is: the varistor (10), as shown in the first figure, The varistor body Q 1 )' is composed of a metal oxide mainly composed of oxidized words, and a terminal electrode (12) is disposed at both ends of the varistor body and (n) _, wherein the zinc oxide can be conventionally sintered by ceramics. Technology, such as adding glue, pulping, drying, green forming, drying, printing, laminating, pellet forming, debinding, etc. = adding other metal oxides as additives, such as manganese oxide, nickel oxide, #化钴等; "milk and the metal oxide can also be formed by the use of organic or inorganic salts, such as carbonate or oxalate, by the conventional ceramic materials, high temperature burning molding technology; and the terminal electrode The material f of (i 2) is mainly composed of metallic silver, and it is possible to appropriately add #, Zhao and other precious gold 4' and may contain an appropriate amount of broken glass, and The method of forming the terminal electrode (1 2 ) made of a metal material such as a sinusoidal material is formed by printing, dip coating, roll coating, spray coating or sintering; in addition, the appearance of the varistor is not limited, and may be a disc shape, Square, rectangular, cylindrical, hollow disc-shaped or hollow-cylindrical, etc., and the process of changing the process of crying can be achieved by the practice of prayer molding or lamination or other conventional techniques. b - First, please refer to the first figure A to D are a preferred embodiment of the present invention, wherein the process method comprises the steps of: - depositing a salt compound (13) step, that is, first maintaining the sulphate solution at a high temperature to form - Supersaturated solution to precipitate phosphate precipitates, and then deposit the phosphate precipitate on the body of the varistor (丄丄). This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 297 297 mm) --- ---.------- (Please read the note on the back and then fill out this page) «1 ϋ n ** Order ------- 1270089 A7 B7 V. Description of the invention (on; a heating The acid salt compound 卩 1 ^ the whipping substance (1 3 ) step, that is, covering the varistor On the surface of the body (1 1 ), the acid compound (i 3) is added to the surface, and the layer is uniformly formed and the structure is firm and transparent (14) 'The insulating layer (14) has Not heated by the plating solution, the temperature in the present embodiment can be 50 CTC-75 ° C, and the heating time is about 5 - 30 minutes; a plated electrode (1 2) In the step, since the varistor body (丄;) is covered by the insulating layer (14), only the terminal electrode (Η) is exposed, so that the electric power operation can be performed; in this embodiment, the electric boat system includes a bottom mine and - solder layer (16), and the plating operation can be performed by barrel plating '7 amps for 80 minutes to form a bottom plating layer (such as nickel or copper), then 7 amps for 80 minutes, in the bottom plating layer ( 1 = solder layer (16) 'This completes the plating terminal electrode work; in addition, the plating terminal electrode (1 2) can be performed by brush plating or electroless plating. Referring to FIG. 2 to FIG. 2 again, another preferred embodiment of the present invention is the same as the previous steps. However, in the last step, the step of removing the insulating layer (14) is added (for example, the second figure). E shows) that the insulating layer (丄4) is removed by rhyme or mineral acid to reproduce the surface of the varistor body of the variable resistance a). σ (1 ϋ - Ming, see also the second embodiment A to F, is a third preferred embodiment of the present invention / is the step of receiving the second embodiment, that is, after the step of removing the insulating layer (14) Add a surface to form an organic coating film (1 7) (such as (210 x 297 mm). The surface of the paper scale is covered with 1270089). The surface of a varistor with a b) has a more appearance. The appearance of the varistor is more A7. (Which) Figure III is not in the varistor body (machine coating film (1 7), used to protect the surface of the varistor body (1 1 ); thereby making the varistor, perfect 'the organic coating film (1 7 ) can be a sub-diacid, vinegar polymer, epoxy vinegar polymer or other can be used as ^=&, polymer' and other insoluble powders and appropriate additives ° organic concentration, please refer to The figure is shown in the figure, which is an embodiment, and the process of the preceding stage is the same as that of the first embodiment. The step of forming an organic coating film (1 7) is as follows (as shown in the fourth figure). a varistor body having an insulating layer (14) (work re-forming - organic coating film (17), whereby the 〇c can be made) The step of removing the insulating layer (14) is omitted. As can be seen from the above, the present invention forms an insulating layer which is not bonded by the surface of the varistor body, so that the surface of the varistor body is not plated with a metal layer and the surface of the flat ship can be maintained. And i (four) or electroplating (four) heart causes a rugged surface, and affects the appearance 'Yes, the present invention ensures that the varistor is greatly improved in the manufacture after plating. Therefore, the design of the present invention meets the requirements of the invention patent, Make an application. This paper scale wipes off the home standard (CNS) A4^

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Claims (1)

A8 B8 C8 D8 1270089 「、申請專利範圍 1、 一種具磷酸鹽絕緣層的變阻器製法,其中變阻器 的變阻器本體為一由氧化鋅為主成份組成的金屬氧化物組 成,而於變阻器本體的兩端分設一端電極,該製法包含 有: 一沈積磷酸鹽步驟,即先將磷酸鹽溶液保持於高溫度 下形成一過飽和溶液,以析出磷酸鹽’再將該填酸鹽沈積 於變阻器本體表面上; 一加熱鱗酸鹽步驟,即對覆蓋於變阻器本體表面上的 磷酸鹽加熱,直至其達融熔狀態,即可形成一層均勻且結 構結實的透明狀絕緣層; 一電鑛端電極步驟’由於變阻器本體係受該絕緣層包 覆,僅端電極外露故可續行電鍍作業; 由於變阻器置於電鍍液中,因其表面形成有不被電鑛 液腐蝕特性的絕緣層,故可免除變阻器本體於端電極電鍍 時受其電鍍或破壞其表面。 2、 如申請專利範圍第1項所述之具磷酸鹽絕緣層的 變阻器製法,於電鍵端電極步驟後進一步進行一去除絕緣 層的步驟,即令變阻器本體表面重現。 3、 如申請專利範圍第2項所述之具磷酸鹽絕緣層的 變阻器製法,於去除絕緣層的步驟後進一步進行一形成有 機塗膜步驟,即於變阻器本體表面塗佈一層有機塗膜’用 以保護該變阻器本體。 4、 如申請專利範圍第1項所述之具鱗酸鹽絕緣層的 變阻器製法,於電鍍端電極步驟後進一步進行一形成有機 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)A8 B8 C8 D8 1270089 ", the scope of patent application 1, a varistor manufacturing method with a phosphate insulating layer, wherein the varistor body of the varistor is composed of a metal oxide composed mainly of zinc oxide, and is disposed at both ends of the varistor body. An end electrode is provided, the method comprises: a step of depositing a phosphate, that is, first maintaining a phosphate solution at a high temperature to form a supersaturated solution to precipitate a phosphate and depositing the acid salt on the surface of the varistor body; Heating the sulphate step, that is, heating the phosphate covering the surface of the varistor body until it reaches a molten state, thereby forming a uniform and structurally transparent transparent insulating layer; an electro-mineral end electrode step 'due to the varistor The system is covered by the insulating layer, and only the terminal electrode is exposed, so that the plating operation can be continued; since the varistor is placed in the plating solution, since the surface is formed with an insulating layer which is not corroded by the electric ore, the varistor body can be eliminated at the end. When the electrode is electroplated, it is plated or destroyed. 2. As shown in the first paragraph of the patent application, the phosphate is absolutely The varistor manufacturing method of the layer further performs a step of removing the insulating layer after the step of the electrode terminal electrode, that is, the surface of the varistor body is reproduced. 3. The varistor method with a phosphate insulating layer as described in claim 2 is removed. After the step of insulating layer, a step of forming an organic coating film is further performed, that is, coating an organic coating film on the surface of the varistor body to protect the varistor body. 4. The scaly salt insulation as described in claim 1 The layer varistor method is further processed after the electroplating terminal electrode step to form an organic paper scale applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 六、申請專利範圍 、'、、、V驟即對該變阻器本體表面的絕緣層直接塗佈一有 機塗膜,以保護該變阻器本體。 5如申請專利範圍第1、2、3或4項所述之具磷 酉夂鹽絕緣層的變阻器製法,其中該端電極的金屬表面係由 内至外依序為至少-底鐘層及至少-銲錫層。 ^ 6,如申凊專利範圍第5項所述之具磷酸鹽絕緣層的 k阻為製法,該端電極的底鍍層及銲錫層可由無電鍍、刷 鍍或滾鍍法製成。 X 7、 如申請專利範圍第丄、2、3或4項所述之具磷 酸鹽絕緣層的變阻器製法,該磷酸鹽溶液係包含有磷酸 根、鋅離子、無機酸根、金屬離子。 8、 如申請專利範圍第2、2、3或4項所述之具磷 酸鹽絕緣層的變阻器製法,該變阻器是氧化鋅再加入其他 金屬氧化物為添加物。 9、 如申請專利範圍第8項所述之具磷酸鹽絕緣層的 變阻器製法,該金屬氧化物可由金屬有機鹽或金屬無機鹽 10 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)6. Applying for the patent scope, ', , and V, the coating layer on the surface of the varistor body is directly coated with an organic coating film to protect the varistor body. [5] The method of manufacturing a varistor having a phosphorous-bismuth salt insulating layer according to claim 1, 2, 3 or 4, wherein the metal surface of the terminal electrode is at least a bottom clock layer and at least from the inside to the outside. - Solder layer. ^6. The k-resistance of the phosphate insulating layer described in claim 5 of the patent application is made by the method of electroless plating, brush plating or barrel plating. X 7. A method of producing a varistor having a phosphate insulating layer as described in claim 2, 2, 3 or 4, wherein the phosphate solution comprises a phosphate, a zinc ion, a mineral acid radical, and a metal ion. 8. A method of making a varistor having a phosphate insulating layer as described in claim 2, 2, 3 or 4, wherein the varistor is zinc oxide and then added to other metal oxides as an additive. 9. For the varistor method with phosphate insulation layer as described in item 8 of the patent application, the metal oxide may be metal organic salt or metal inorganic salt. 10 This paper scale is applicable to China National Standard (CNS) A4 specification (210 X 297). MM)
TW90132693A 2001-12-28 2001-12-28 Method for manufacturing varistor with phosphate insulation layer TWI270089B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11037710B2 (en) 2018-07-18 2021-06-15 Avx Corporation Varistor passivation layer and method of making the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11037710B2 (en) 2018-07-18 2021-06-15 Avx Corporation Varistor passivation layer and method of making the same

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