CN100477031C - Method for forming outer electrode of electronic element and said electronic element - Google Patents
Method for forming outer electrode of electronic element and said electronic element Download PDFInfo
- Publication number
- CN100477031C CN100477031C CNB2004100399272A CN200410039927A CN100477031C CN 100477031 C CN100477031 C CN 100477031C CN B2004100399272 A CNB2004100399272 A CN B2004100399272A CN 200410039927 A CN200410039927 A CN 200410039927A CN 100477031 C CN100477031 C CN 100477031C
- Authority
- CN
- China
- Prior art keywords
- copper
- film
- outer electrode
- bath
- bottoming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000010949 copper Substances 0.000 claims abstract description 99
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229910052802 copper Inorganic materials 0.000 claims abstract description 97
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 64
- 238000009713 electroplating Methods 0.000 claims abstract description 47
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 32
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 30
- 238000005868 electrolysis reaction Methods 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 claims description 13
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 6
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 claims description 6
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 3
- 229910001431 copper ion Inorganic materials 0.000 claims description 3
- 235000011180 diphosphates Nutrition 0.000 claims description 3
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 30
- 230000008569 process Effects 0.000 abstract description 7
- 229910000679 solder Inorganic materials 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000002003 electrode paste Substances 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229940048084 pyrophosphate Drugs 0.000 description 2
- 229940005657 pyrophosphoric acid Drugs 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical group [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 241000278713 Theora Species 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- -1 dioctyl phthalate glycol esters Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- MNWBNISUBARLIT-UHFFFAOYSA-N sodium cyanide Chemical compound [Na+].N#[C-] MNWBNISUBARLIT-UHFFFAOYSA-N 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
Images
Classifications
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02B—HYDRAULIC ENGINEERING
- E02B15/00—Cleaning or keeping clear the surface of open water; Apparatus therefor
- E02B15/04—Devices for cleaning or keeping clear the surface of open water from oil or like floating materials by separating or removing these materials
- E02B15/08—Devices for reducing the polluted area with or without additional devices for removing the material
- E02B15/0814—Devices for reducing the polluted area with or without additional devices for removing the material with underwater curtains
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02B—HYDRAULIC ENGINEERING
- E02B15/00—Cleaning or keeping clear the surface of open water; Apparatus therefor
- E02B15/04—Devices for cleaning or keeping clear the surface of open water from oil or like floating materials by separating or removing these materials
- E02B15/06—Barriers therefor construed for applying processing agents or for collecting pollutants, e.g. absorbent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
- B63B—SHIPS OR OTHER WATERBORNE VESSELS; EQUIPMENT FOR SHIPPING
- B63B22/00—Buoys
- B63B22/18—Buoys having means to control attitude or position, e.g. reaction surfaces or tether
- B63B22/20—Ballast means
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02B—HYDRAULIC ENGINEERING
- E02B15/00—Cleaning or keeping clear the surface of open water; Apparatus therefor
- E02B15/04—Devices for cleaning or keeping clear the surface of open water from oil or like floating materials by separating or removing these materials
- E02B15/08—Devices for reducing the polluted area with or without additional devices for removing the material
- E02B15/085—Details of connectors
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D2600/00—Miscellaneous
- E02D2600/20—Miscellaneous comprising details of connection between elements
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D2600/00—Miscellaneous
- E02D2600/30—Miscellaneous comprising anchoring details
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D5/00—Bulkheads, piles, or other structural elements specially adapted to foundation engineering
- E02D5/74—Means for anchoring structural elements or bulkheads
- E02D5/80—Ground anchors
Abstract
Provided is an external electrode forming method of an electronic component for contriving cost reduction due to simplification of a working process. The external electrode forming method of the electronic component forms a first copper film 14 on the surface of a substrate film 13 by charging a barrel BR11 putting in a component before plating C11 and a first medium M11 into a copper strike plating bath BT11 to perform electrolytic strike plating, forms a second copper film 15 on the surface of the first copper film 14 by taking out the barrel BR11 from the copper strike plating bath BT11 to charge it into a copper plating bath BT12 so as to perform electrolytic plating, forms a nickel film 16 on the surface of the second copper film 15 by taking out the barrel BR11 from the copper plating bath BT12 to charge it into a nickel plating bath BT13 so as to perform electrolytic plating, and forms a solder film 17 on the surface of the nickel film 16 by taking out the barrel BR11 from the nickel plating bath BT13 to charge it into a solder plating bath BT14 so as to perform electrolytic plating.
Description
Technical field
The invention relates to the outer electrode formation method of electronic components such as chip capacitor or chip resistor, and relevant its outer electrode is through the electronic component of improvement.
Background technology
The outer electrode formation method of chip capacitor or chip resistor etc. just like disclosing in the Japan Patent Publication Laid-Open 2001-35740 communique, forms copper film, nickel film, scolding tin film by the cylinder plating in proper order on basilar memebrane (nickel film) surface.Thus formed outer electrode because the stress due to the copper film that is located at nickel film downside is releived, therefore has the nickel film that can suppress the copper film surface and the scolding tin film is peeled off or the advantage of these films be full of cracks.
Summary of the invention
As previously mentioned, on basilar memebrane (nickel film) surface, form copper film, nickel film, scolding tin film in proper order by the cylinder plating, at first, as shown in Figure 1, to be formed with basilar memebrane, put into the 1st cylinder BR1 by spherical the 1st medium M1 that metal constituted such as parts C1 before electroplating and Fe, will carry out metallide among the 1st cylinder BR1 input copper electroplating bath BT1.Then, the 1st cylinder BR1 is taken out from copper electroplating bath BT1, the 1st plating back parts C1 ' and the 1st medium M1 that will be formed with copper film are sorted.Afterwards, as shown in Figure 2, spherical the 2nd medium M2 that metals such as parts C1 ' and Fe are formed after will electroplating by the 1st puts into the 2nd cylinder BR2, with carrying out metallide among the 2nd cylinder BR2 input nickel electroplating bath BT2, then, the 2nd cylinder BR2 is taken out from nickel electroplating bath BT2, and it is dropped into solder bath BT3 carry out metallide, then, the 2nd cylinder BR2 is taken out from solder bath BT3, need the 2nd plating back parts C2 and the 2nd medium M2 that will be formed with nickel film and scolding tin film again to be sorted.
Promptly, on the basilar memebrane surface, form copper film in proper order by the cylinder plating, the nickel film, during the scolding tin film, if the medium (symbol M 1 of Fig. 1) that uses copper to electroplate when carrying out is used as the medium (symbol M 2 of Fig. 2) that is sorted after scolding tin is electroplated, then owing to be locality with the formed copper film of medium, and thickness is uneven, in other words, be used as medium when carrying out cupric electrolysis owing to can not use same medium, therefore must prepare copper respectively electroplates with medium and nickel/scolding tin plating medium, must sort copper after copper is electroplated and electroplate used medium, this causes numerous and diverseization of job engineering.
The present invention is because above-mentioned situation, its purpose is: providing a kind of can reach the outer electrode formation method of the electronic component of deleting cost because of job engineering simplifies, and has the electronic component by the formed outer electrode of this outer electrode formation method.
In order to reach aforementioned purpose, the outer electrode formation method of electronic component involved in the present invention, it is the outer electrode formation method that belongs to the electronic component that on the surface of basilar memebrane, sequentially forms multicoating, its principal character is, on basilar memebrane, electroplate (strike plating) to form the 1st copper film by the electrolysis bottoming, and on the 1st copper film surface, form the 2nd copper film by metallide, on the surface of the 2nd copper film, form the nickel film again, on nickel film surface, form the scolding tin film again by metallide by metallide.
If according to this outer electrode formation method, then can obtain an electronic component, order forms multicoating (the 1st copper film that electrolysis bottoming plating is become to described electronic component on the basilar memebrane surface in order to have, and the 2nd copper film that metallide became, and the nickel film that metallide became, and the scolding tin film that metallide became) constitutes outer electrode.
Again, even with used medium in the metallide of scolding tin, when being used in the electrolysis bottoming plating of copper, also can be formed uniformly thin copper film at this dielectric surface, therefore, this medium directly can be utilized as carrying out the medium of cupric electrolysis when electroplating, more delete the cost that medium is required in the time of can using two media.Moreover, just each electroplating processes can be shared on because need only a kind of medium,, just a series of electroplating processes can be carried out by 1 time sorting operation so can exempt the selection operation when using two media, and can reach the simplification of job engineering, and then promote production efficiency.
Aforementioned purpose of the present invention and other purpose, constitutive characteristic, action effect can be by the following description and accompanying drawings and understand.
The accompanying drawing simple declaration
Figure 1 shows that outer electrode formation method in the past.Figure 2 shows that outer electrode formation method in the past.Figure 3 shows that outer electrode formation method of the present invention.Figure 4 shows that the profile of the preceding parts of plating shown in Figure 3.Figure 5 shows that the profile of electroplating the back parts shown in Figure 3.Figure 6 shows that the table of the checking example (test portion 1 and 2) when copper bottoming electroplating bath uses synthesized copper pyrophosphate bath.Figure 7 shows that the table of the checking example (test portion 3～5) when copper bottoming electroplating bath uses copper cyanide bath.Figure 8 shows that the table of the checking example (test portion 6～8) when copper bottoming electroplating bath uses copper sulphate to bathe.Fig. 9 represents the table of mean value, standard deviation and the coefficient of variation of the thickness of test portion 1～8 formed the 2nd copper film respectively.
Symbol description
Parts before C11 electroplates
C12 electroplates the back parts
11 dielectric chips
12 internal electrodes
13 basilar memebranes
14 the 1st copper films
15 the 2nd copper films
16 nickel films
17 scolding tin films
The M11 medium
The BR11 cylinder
BT11 copper bottoming electroplating bath
The BT12 copper electroplating bath
BT13 nickel electroplating bath
BT14 scolding tin electroplating bath
Embodiment
Figure 3 shows that an example of outer electrode formation method of the present invention, symbol C11 among the figure is parts before electroplating, C12 electroplates the back parts, M11 is a medium, BR11 is a cylinder, and BT11 is a copper bottoming electroplating bath, and B12 is a copper electroplating bath, BT13 is the nickel electroplating bath, and BT14 is the scolding tin electroplating bath.
Parts C11 belongs to shaped like chips capacitor (multilayer ceramic capacitor) before the plating shown in Figure 3, as shown in Figure 4, possess dielectric chip 11, and be embedded in the most internal electrodes 12 in the dielectric chip 11, and be arranged on the pair of substrates film 13 at the length direction both ends of dielectric 11.
The manufacture method of aforementioned plating leading zero parts C11 is described herein.
Obtain aforementioned plating leading zero parts C11, at first, use mould coating machine (Die Coater) or blade coating machine etc., the ceramic raw material that will contain dielectric medium powder and resinoid bond, with fixed thickness be coated on the poly-surface resin films such as this dioctyl phthalate glycol esters, be dried and form printed circuit board (PCB).
Then, on the surface of aforementioned printed circuit board (PCB),, will contain the electrode paste of nickel by powder and resinoid bond by gimmicks such as screen painting or intaglio printings, with institute's fixed number group, m * n array and order printing after being dried, forms and do not burn till interior electrode layer for example.
Then, to be formed with do not burn till interior electrode layer printed circuit board (PCB) together with not burning till interior electrode layer, with fixed size strip down from resin film by charging and attacking processing, acquisition has the 1st unit thin slice that does not burn till the interior electrode layer group, simultaneously, will less than form the printed circuit board (PCB) do not burn till interior electrode layer with fixed size strip down from resin film by charging and attacking processing, obtain not have the 2nd unit thin slice that does not burn till the interior electrode layer group.
Then, the 2nd unit thin slice of institute's stator number is given lamination, impose hot pressing, go up the 1st unit thin slice of lamination institute stator number again in its surface, impose hot pressing, go up the 2nd unit thin slice of lamination institute stator number again in its surface, impose hot pressing, obtain laminate.
Then, laminate is blocked into element size, make the chip that do not burn till of cube shaped, it is burnt till to obtain to burn till chip.This burns till on the length direction both ends of the surface of chip, has the ora terminalis of internal electrode 12 to be alternately and exposes.
Then, will with aforementioned identical electrode paste, at the length direction both ends of burning till chip,, and will be coated with paste and give sintering and form outer electrode with infusion process coating.Certainly, can also after not burn till the length direction both ends coating electrode paste of chip, will not burn till chip again and be coated with to stick with paste and burn till simultaneously.
Below,, illustrate on basilar memebrane 13 surfaces of parts C11 before plating that order forms the method for multicoating with reference to Fig. 3.
At first, will put into cylinder BR11, and will this cylinder BR11 drop into and carry out the electrolysis bottoming among the copper bottoming electroplating bath BT11 and electroplate by spherical medium M11 that metal became such as parts C11 before electroplating and Fe.On basilar memebrane 13 surfaces, form the 1st copper film 14 (with reference to Fig. 5).Along with the treatment conditions difference, the thickness of formed the 1st copper film 14 (with reference to Fig. 5) is electroplated in this electrolysis bottoming, comprises the situation that partly forms, and is approximately 0.05～0.5 μ m.
This electrolysis bottoming is electroplated, the electroplating processes that is to use concentration of metal ions to be generally low electroplate liquid and under the short time, to carry out, when the oxide removal (activate) with the surface of the surface of basilar memebrane 13 and medium M11 carries out, utilize the generation of displacement film only can slowly take place, and can suitably form the thin copper film that has adherence with basilar memebrane 13 surfaces and medium M11 surface.In this electrolysis bottoming electroplating bath (copper bottoming electroplating bath), can use any one of synthesized copper pyrophosphate bath, copper cyanide bath and copper sulphate bath again.
Then, cylinder BR11 is taken out from copper bottoming electroplating bath BT11, it is dropped into copper electroplating bath BT12 carry out metallide, on the surface of the 1st copper film 14, form the 2nd copper film 15 (with reference to Fig. 5).Along with the treatment conditions difference, the thickness of formed the 2nd copper film 15 (with reference to Fig. 5) of this metallide is approximately 1.0～8.0 μ m.
Then, cylinder BR11 is taken out from copper electroplating bath BT12, it is dropped into nickel electroplating bath BT13 carry out metallide, on the surface of the 2nd copper film 15, form nickel film 16 (with reference to Fig. 5).Along with the treatment conditions difference, the thickness of the formed nickel film 16 of this metallide (with reference to Fig. 5) is approximately 1.0～5.0 μ m.
Then, cylinder BR11 is taken out from nickel electroplating bath BT13, to carry out metallide among its input scolding tin electroplating bath BT14, the surperficial desirable of nickel film 16 is lead-free scolding tin, and for example tin or tin-X are the scolding tin film 17 (with reference to Fig. 5) that alloy (X is the metals beyond the lead such as copper, bismuth, silver) is become.Along with the treatment conditions difference, the thickness of the formed scolding tin film 17 of this metallide (with reference to Fig. 5) is approximately 1.0～10.0 μ m.
Then, cylinder BR11 is taken out from solder bath BT14, will electroplate back parts C12 and medium M11 and be sorted.Through the medium M11 that sorts, can utilize once again as electroplating medium when forming the 1st copper film 14 with the electrolysis bottoming on basilar memebrane 13 surfaces of parts C11 before plating.
With the relevant aforesaid outer electrode formation method of explanation, especially, electroplate formation the 1st copper film 14, the concrete example when the 1st copper film 14 surfaces form the 2nd copper film 15 by metallide again by the electrolysis bottoming herein, on the basilar memebrane surface.
Test portion 1 and 2 shown in Figure 6, the checking example when being to use synthesized copper pyrophosphate bath as copper bottoming electroplating bath.It is the electrolyte of solute that synthesized copper pyrophosphate bath is to use pyrophosphoric acid cupric and potassium pyrophosphate, therefore test portion 1 and 2 imposes the electrolysis bottoming plating of copper with treatment conditions shown in Figure 6 respectively and after forming the 1st copper film 14, imposes the metallide of copper and form the 2nd copper film 15 with the treatment conditions of showing to be remembered on the right side again.In addition, the electrolysis of copper bottoming is electroplated, and is to use with tin to electroplate as the used medium of scolding tin plating.
Test portion 3～5 shown in Figure 7, the checking example when being to use copper cyanide bath as copper bottoming electroplating bath.Copper cyanide bath is to use cyaniding monovalence copper and Cymag or potassium cyanide as solute, add the electrolyte of Luo Seershi salt and sodium carbonate in response to needs, therefore test portion 3～5th, respectively with the treatment conditions that Fig. 7 was put down in writing impose copper electrolysis bottoming plating and after forming the 1st copper film 14, to impose the metallide of copper and to form the 2nd copper film 15 with test portion 1 and 2 identical treatment conditions.In addition, the electrolysis of copper bottoming is electroplated, and is to use with tin to electroplate as the used medium of scolding tin plating.
Thickness average value, standard deviation and the coefficient of variation of having showed the 2nd copper film that each test portion 1～8 is formed among Fig. 9.As shown in Figure 9, when the electrolysis of the copper that is carried out before the metallide that carries out copper bottoming was electroplated, the kind of employed bath no matter all can obtain the 2nd copper film of the suitable thickness about 1.6 μ m.Though omit in the icon, when the electrolysis bottoming of carrying out the copper that or not before the metallide of copper is electroplated, be formed on copper film thickness on the basilar memebrane and be aforesaid about half and inhomogeneous, standard deviation also nearly arrives greatly at double.
Again, in the test portion 1 that uses synthesized copper pyrophosphate bath, when the electrolysis of copper bottoming is electroplated from the molten tin output amount of medium for 34mg to be arranged for the 1kg medium, compared to using in the test portion 2 of P than higher synthesized copper pyrophosphate bath, when the electrolysis of copper bottoming is electroplated from the molten tin output amount of medium for 451mg to be arranged for the 1kg medium, test portion 2 is more to have increased the displacement reaction amount than test portion 1 as can be known, but in the middle of cupric electrolysis afterwards electroplates, and no matter what person can both obtain the suitable thickness of 1.60 μ m or 1.64 μ m.
Copper bottoming electroplating bath BT11, though can use aforementioned synthesized copper pyrophosphate bath or copper cyanide bath or copper sulphate to bathe aptly, in fact,, comparatively desirable with to the less and few synthesized copper pyrophosphate bath of parts C11 injury before electroplating to carrying capacity of environment.
When using this synthesized copper pyrophosphate bath, the P ratio among Fig. 6 is set at 5.5～14, is desirably 6～10 scope.Described P ratio is { pyrophosphate (P in the expression synthesized copper pyrophosphate bath
2O
7 -2) concentration (g/L)/{ copper ion (Cu
2+) concentration (g/L), therefore the P ratio was less than 5.5 o'clock, can cause the generation of insoluble complex salt because of the pyrophosphate deficiency, the P ratio was above 14 o'clock, then because of the formation speed of displacement film too, cause being formed on medium M11 surface soon and electroplate before parts C11 basilar memebrane 13 surfaces the 1st copper film 14 adherence descend.In addition, when P than scope 6～10 in the time, can obtain the 1st high copper film 14 of adherence, and can suppress the generation of insoluble complex salt and the stripping of tin, therefore can guarantee that the life-span of bathing prolongs.
Again, in test portion 1 and 2, though use the pyrophosphoric acid cupric to be used as mantoquita, so long as can produce copper ion (Cu
2+), for example sulfuric acid cupric or acetic acid cupric or other mantoquita such as nitric acid cupric or copper chloride all can replace it and use.
So, if according to aforesaid outer electrode formation method, just can obtain a kind of shaped like chips capacitor, its outer electrode that has is, on basilar memebrane 13 surfaces, form 4 layers of electroplating film, that is, by electrolysis bottoming electroplate the 1st copper film 14 that become, the 2nd copper film 15 that metallide became, nickel film 16 that metallide became, scolding tin film 17 orders that metallide became form and the outer electrode that constitutes.This outer electrode formation method, electronic component except being applicable to aforementioned shaped like chips capacitor is certainly also applicable to for example formation of the outer electrode of shaped like chips resistor, shaped like chips inductor, shaped like chips capacitor array, shaped like chips electric resistance array, shaped like chips electric inductance array etc.
In addition, even owing to the used medium M11 of metallide with scolding tin, when use is electroplated in the electrolysis bottoming, also can form thin and uniform copper film on this medium M11 surface, therefore, medium when can be directly this medium M11 being used metallide as copper, thereby when preparing two media, more can delete cost.Moreover, 1 kind of medium just can be shared on various electroplating processes, and twice sorting operation in the time of can avoiding using two media only needs just can carry out a series of electroplating processes with a sorting operation, therefore can simplify job engineering, and then reach the purpose that promotes production efficiency.
As described in detail above, if according to the present invention, the outer electrode formation method that can reach the electronic component of deleting cost by the simplification of job engineering then can be provided, and the electronic component with the formed outer electrode of this outer electrode formation method of use.
Claims (4)
1. the outer electrode formation method of an electronic component, the outer electrode formation method of described electronic component is sequentially to form multicoating on the surface of basilar memebrane, it is characterized by,
On the dielectric surface surperficial and that in cylinder is electroplated, use of basilar memebrane, electroplate to form the 1st copper film by cylinder electrolysis bottoming, and on the 1st copper film surface, still use aforementioned medium to form the 2nd copper film by the cylinder metallide, on the surface of the 2nd copper film, still use aforementioned medium to form the nickel film again, on nickel film surface, still use aforementioned medium to form the scolding tin film again by the cylinder metallide by the cylinder metallide.
2. the outer electrode formation method of electronic component as claimed in claim 1 is characterized by, and the electroplating bath that the electrolysis of copper bottoming is electroplated is to use any one that synthesized copper pyrophosphate bath, copper cyanide bath and copper sulphate bathes.
3. the outer electrode formation method of electronic component as claimed in claim 1, it is characterized by, the electroplating bath that the electrolysis of copper bottoming is electroplated is to use synthesized copper pyrophosphate bath, and with the P of { pyrophosphate concentration (g/L) }/{ copper ion concentration (g/L) } representative than being in 6～10 the scope of being set in.
4. an electronic component is characterized by, and the outer electrode that it has by claim 1 forms the outer electrode that method forms.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003065062 | 2003-03-11 | ||
| JP2003065062A JP4544825B2 (en) | 2003-03-11 | 2003-03-11 | Method for forming external electrode of electronic component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1551259A CN1551259A (en) | 2004-12-01 |
| CN100477031C true CN100477031C (en) | 2009-04-08 |
Family
ID=33126184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100399272A Expired - Lifetime CN100477031C (en) | 2003-03-11 | 2004-03-11 | Method for forming outer electrode of electronic element and said electronic element |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4544825B2 (en) |
| KR (1) | KR100937298B1 (en) |
| CN (1) | CN100477031C (en) |
| HK (1) | HK1071804A1 (en) |
| MY (1) | MY139649A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006269829A (en) * | 2005-03-24 | 2006-10-05 | Kyocera Corp | Ceramic electronic component |
| JP5899609B2 (en) * | 2010-08-06 | 2016-04-06 | 株式会社村田製作所 | Multilayer ceramic capacitor and manufacturing method thereof |
| KR20130037485A (en) * | 2011-10-06 | 2013-04-16 | 삼성전기주식회사 | Multilayered ceramic capacitor, and method for manufacturing the same |
| US10933679B2 (en) * | 2017-03-27 | 2021-03-02 | Taiyo Yuden Co., Ltd. | Screen printing plate and manufacturing method of electronic component |
| CN112342584A (en) * | 2020-09-29 | 2021-02-09 | 扬州市景杨表面工程有限公司 | Nonmagnetic copper-tin electroplating process for capacitor device of cardiac pacemaker |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5805409A (en) * | 1995-08-18 | 1998-09-08 | Tdk Corporation | Multi-layer electronic part having external electrodes that have a thermosetting resin and metal particles |
| JP3407839B2 (en) * | 1995-12-27 | 2003-05-19 | 富士通株式会社 | Method of forming solder bump for semiconductor device |
| KR20000003052A (en) | 1998-06-25 | 2000-01-15 | 이형도 | External electrode forming of chip component |
-
2003
- 2003-03-11 JP JP2003065062A patent/JP4544825B2/en not_active Expired - Lifetime
-
2004
- 2004-03-11 CN CNB2004100399272A patent/CN100477031C/en not_active Expired - Lifetime
- 2004-03-12 KR KR1020040016918A patent/KR100937298B1/en active IP Right Grant
- 2004-03-12 MY MYPI20040877A patent/MY139649A/en unknown
-
2005
- 2005-05-26 HK HK05104408.3A patent/HK1071804A1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100937298B1 (en) | 2010-01-18 |
| MY139649A (en) | 2009-10-30 |
| CN1551259A (en) | 2004-12-01 |
| JP2004273919A (en) | 2004-09-30 |
| KR20040081063A (en) | 2004-09-20 |
| JP4544825B2 (en) | 2010-09-15 |
| HK1071804A1 (en) | 2005-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101587775B (en) | Laminated electronic component and method for manufacturing the same | |
| CN102693836B (en) | Monolithic ceramic electronic component and manufacture method thereof | |
| US7206187B2 (en) | Ceramic electronic component and its manufacturing method | |
| KR101444536B1 (en) | Multi-Layered Ceramic Electronic Component And Manufacturing Method Thereof | |
| CN101465206B (en) | Multilayer ceramic electronic component and manufacturing method thereof | |
| CN102254679B (en) | Electronic component and method for manufacturing the same | |
| JP5600247B2 (en) | Multilayer electronic component and manufacturing method thereof | |
| JP2010021524A (en) | Multilayer ceramic electronic component and method of manufacturing same | |
| CN102683012B (en) | Ceramic electronic component | |
| KR20010015364A (en) | An electronic component comprising on external terminal electrode and a method of manufacturing the component | |
| CN103325567A (en) | Multi-layer ceramic electronic component and method of manufacturing the same | |
| US8520361B2 (en) | Laminated electronic component | |
| CN102623177B (en) | The manufacture method of ceramic electronic components and ceramic electronic components | |
| CN100477031C (en) | Method for forming outer electrode of electronic element and said electronic element | |
| JP3679529B2 (en) | Terminal electrode paste and multilayer ceramic capacitor | |
| KR101532149B1 (en) | Multi-layered ceramic capacitor, manufacturing method thereof and board having the same mounted thereon | |
| JPS63104314A (en) | Method of forming electorode terminal of chip capacitor | |
| JP2011108875A (en) | Method of manufacturing electronic component, and the electronic component | |
| JP4515334B2 (en) | Barrel plating method and electronic component manufacturing method | |
| JPS5874030A (en) | Electronic part, conductive film composition and method of producing same | |
| JP3038296B2 (en) | Electronic component manufacturing method | |
| JP2822123B2 (en) | Ni-containing nonmagnetic conductive paste and electronic component having the conductor | |
| JPWO2011043265A1 (en) | Flat Ni particles, multilayer ceramic electronic component using the same, and method for producing flat Ni particles | |
| DE2111516C3 (en) | Multilayer ceramic capacitor and method for its manufacture | |
| EP3297009B1 (en) | Method for manufacturing a leadless solid electrolyte capacitor and corresponding capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1071804 Country of ref document: HK |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1071804 Country of ref document: HK |
|
| ASS | Succession or assignment of patent right |
Owner name: TAIYO YUDEN CO., LTD. Free format text: FORMER OWNER: TAIYO CHEMICAL INDUSTRIES LTD. Effective date: 20110908 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20110908 Address after: Tokyo, Japan Patentee after: TAIYO YUDEN Co.,Ltd. Address before: Gunma Patentee before: Taiyo Chemical Industry Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20090408 |
|
| CX01 | Expiry of patent term |