TWI269945B - Lithographic apparatus, device manufacturing method and device manufactured thereby - Google Patents

Lithographic apparatus, device manufacturing method and device manufactured thereby Download PDF

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Publication number
TWI269945B
TWI269945B TW091118206A TW91118206A TWI269945B TW I269945 B TWI269945 B TW I269945B TW 091118206 A TW091118206 A TW 091118206A TW 91118206 A TW91118206 A TW 91118206A TW I269945 B TWI269945 B TW I269945B
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Taiwan
Prior art keywords
segment
radiation
section
smooth
projection
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TW091118206A
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Chinese (zh)
Inventor
Nicolaas Rudolf Kemper
Hernes Jacobs
Edwin Johan Buis
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Asml Netherlands Bv
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841Constructional issues related to vacuum environment, e.g. load-lock chamber
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16JPISTONS; CYLINDERS; SEALINGS
    • F16J3/00Diaphragms; Bellows; Bellows pistons
    • F16J3/04Bellows
    • F16J3/047Metallic bellows
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16LPIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L11/00Hoses, i.e. flexible pipes
    • F16L11/14Hoses, i.e. flexible pipes made of rigid material, e.g. metal or hard plastics
    • F16L11/15Hoses, i.e. flexible pipes made of rigid material, e.g. metal or hard plastics corrugated
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709Vibration, e.g. vibration detection, compensation, suppression or isolation

Abstract

A bellows used to connect two sealed compartments of the lithographic apparatus or a compartment and a pump, comprises a first section having smooth helical corrugations and a second section that can accommodate the longitudinal movement caused by relative rotation of the ends of the first section. The second section may be a mirror image of the first section or one or more sub-sections of circumferential corrugations.

Description

1269945 ⑴ 狄、發明說明· U明π明應敘明:發明所屬之技術領域'先前技術、内容、實施方式及圖式簡單說明) 本發明係有關於一種微影投射裝置,其包含: 一一輻射系統,其用於供應一輻射投射束; —一支撐結構,其用於支撐圖案化構件,圖案化構件具有 依據一所需要的圖案將投射束圖案化之功用; 一基材台,其用於固持一基材;及 〜一投射系統,其用於將圖案束投射在基材的一目標部上。 %私本文所用的圖案化構件”廣義解釋為用以對於進入 μ射束賦予與基材的—目標部中生成的—圖案相對應之 —圖案化剖面之構件;此情形亦可使用‘‘光閥,,名稱。一般 而5 ,该圖案係對應於目標部中生成的一裝置之一特定的 功能層,諸如積體電路或其他裝置(見下文),此等圖案化 構件的範例包括: 遮罩。遮罩的概念為微影技術所熟知並包括諸如二元 又曰相位移及衰減相位移等遮罩類型及各種複合式遮 罩颂型。將此遮罩放置在輻射束中,可藉以依據遮罩上 的圖案造成衝擊在遮罩上之輻射產生選擇性透射(若為 透射性遮罩)或反射(若為反射性遮罩)。在遮罩的情形下 ,支撐結構一般係為一遮罩台,藉以確保將遮罩固持在 進入輻射束中的一所需要位置,並確保可依需要相對於 輻射束而移動。 % —可程式化鏡陣列。此裝置的範例係為一矩陣可位址化 表面,其具有一黏彈性控制層及一反射表面。此裝置的 基本原理為:€譬如)反射表面的位址化區域係將入射光 (2) 1269945 反射成為衍射光,未位址化區域則將入射光反射成為未 衍射光。可利用一適當的過濾器從反射束濾出該未衍射 光而只留下衍射光;利用此方式,依據矩陣可位址化表 面的位址化圖案使束變成圖案化。一可程式化鏡陣列的 一替代性實施例係採用微型鏡的一矩陣配置,各微型鏡 藉由施加一適當局部電場或利用壓電致動構件而個別 地沿一軸線呈現傾斜。再者,鏡亦為矩陣可位址化,使 得位移化的鏡將對於未位址化的鏡以一不同方向反射 進入的輻射束;利用此方式,依據矩陣可位址化的鏡 之位址化圖案將經反射的束加以圖案化。可利用適當的 電子構件進行所需要的矩陣位址化。上述兩情形中,圖 案化構件可包含一或多個可程式化鏡陣列,可利用適當 的包子構件進行所需要的矩陣位址化。此等鏡陣列的更 夕相關A譬如請見美國專利5,296,89 1及5,523,193號 及?〇專利申請案則98/38597及侧8/33〇卿’,上: 各案以引用f式併入本文中。在-可程式化鏡陣列二 形中可^。亥支撐結構實施為-框架或台並譬如可依兩 要為固定式或可移式。 而 σ ’式化LCD陣列。此構造的範例請見美國專利 5,229,872號’此案以引用方式併入本文中。如二 情形中可將支樓結構實施為;二 要為固定式或可移式。 u了依需 .. ^ b文,、餘部份中可在特定位置特別# f+ 包含一遮罩及遮罩△♦穸如 且%別針封 粑例;但可從上述圖案化構件的較 1269945 發明說钥繽頁 廣範圍看出此等情形所描述之一般原理。 譬如可利用微影投射裝置來製造積體電路,此情形中, 圖案化構件可產生與IC的一各別層對應之一電路圖案,且 此圖案可成像在已塗有一層輻射敏感性物質(阻劑)之一 基材(矽晶圓)上的一目標部(譬如包含一或多個晶粒)上。 一般而言,單一晶圓將包含以一次一個方式經由投射系統 連績性輻照之相鄰目標部的一完整網路。現今的裝置中, 可利用-遮罩台上的一遮罩之圖案化在兩不同類型的機 器之間作出區分。在一類型的微影投射裝置中,藉由將整 個遮罩圖案-次暴露於目標部上來_照各目標部;此穿置 f stepper) 〇 t ^ ^ ^ ^ ^ # 描(step-and-scan)裝置的替代性裝置中,在一給定參考方 向(柃描方向)於投射束下漸進式掃描遮覃圖案且同時同 步掃描與此方向平行或反向平行之基材台,藉以輻照各目 標部;因為一般而t,於鱼+ σ投射乐統將有放大率Μ(通常<ι), 基材台的掃描速度V將兔访4*、套Λ /Γ + ^ 杆為放大半Μ乘以遮覃台的掃描速度 ’微影裝置的更多相閛資1辟 抑貝Λ言如請見美國專利6,046,79? 號,此案以引用方式併入本文中。 -種使用-微影投射裝置之製造方法中,一圖案(嬖如 位於-遮罩中)係成像在至少部份地受到一層輪射敏感性 材料(阻劑)所覆蓋之一美鉍 一 暴材上。在此成像步驟之前,基材 可經歷諸如塗底料、卩且添| 和曰 阻Μ塗覆及軟烘烤等各種程序。基材 在暴光之後可進行諸如皋朵 "、尤便(、烤(ΡΕΒ)、顯影、硬烘烤 及成像特性的測量/檢綸笼甘从< 双,^寺其他程序,利用此系列的程序 12699451269945 (1) Di, invention description, U Ming π Ming Ying: The technical field of the invention 'Previous technology, content, embodiments and drawings are simple descriptions» The present invention relates to a lithography projection apparatus, comprising: a radiation system for supplying a radiation projection beam; a support structure for supporting the patterned member, the patterned member having a function of patterning the projection beam according to a desired pattern; And a projection system for projecting the pattern beam onto a target portion of the substrate. The patterned member used in this document is broadly interpreted as a member for patterning a profile corresponding to a pattern that is created in the target portion of the substrate to enter the μ beam; in this case, ''light can also be used Valve, the name. Generally, 5, the pattern corresponds to a specific functional layer of one of the devices generated in the target portion, such as an integrated circuit or other device (see below), examples of such patterned members include: The concept of a mask is well known to lithography and includes mask types such as binary and phase shifts and attenuated phase shifts, as well as various composite mask types. This mask can be placed in the radiation beam. Depending on the pattern on the mask, the radiation on the mask produces a selective transmission (if a transmissive mask) or a reflection (if a reflective mask). In the case of a mask, the support structure is generally a A masking station to ensure that the mask is held in a desired position into the radiation beam and that it can be moved relative to the radiation beam as needed. % - Programmable mirror array. An example of this device is a moment a addressable surface having a viscoelastic control layer and a reflective surface. The basic principle of the device is: for example, the address region of the reflective surface reflects incident light (2) 1269945 into diffracted light, The address region reflects the incident light into undiffracted light. The undiffracted light can be filtered from the reflected beam by a suitable filter to leave only the diffracted light; in this way, the address of the surface addressable according to the matrix The pattern transforms the beam into a pattern. An alternative embodiment of a programmable mirror array employs a matrix configuration of micromirrors, each of which is individually edged by application of a suitable local electric field or by piezoelectrically actuating members. The axis is tilted. Furthermore, the mirror is also addressable by the matrix, so that the displaced mirror will reflect the incoming radiation beam in a different direction for the unaddressed mirror; in this way, the matrix can be addressable The mirrored address pattern is patterned by the reflected beam. The desired matrix address can be performed using appropriate electronic components. In both cases, the patterned member can include one or more A programmable array of mirrors can be used to perform the required matrix addressing using appropriate baffle components. For example, see US Patent Nos. 5,296,89 1 and 5,523,193 and the patent application. Case 98/38597 and side 8/33〇卿', above: Each case is incorporated herein by reference to f. In the -formable mirror array dimorphism, the support structure is implemented as a frame or a table. For example, the sigma-type LCD array can be used as a fixed or movable type. For an example of this configuration, see U.S. Patent No. 5,229,872, the disclosure of which is incorporated herein by reference. The structure is implemented as follows; the second is fixed or movable. u is on demand.. ^ b text, the rest can be in a specific position special # f+ contains a mask and mask △ ♦ such as and % pin The example is described; however, the general principles described in these cases can be seen from the broad range of the above-mentioned patterned components. For example, a lithographic projection device can be used to fabricate an integrated circuit, in which case the patterned member can produce a circuit pattern corresponding to a respective layer of the IC, and the pattern can be imaged onto a layer of radiation-sensitive material ( A target (such as one or more crystal grains) on one of the substrates (tantalum wafer). In general, a single wafer will contain a complete network of adjacent targets that are continuously irradiated via the projection system in a single pass. In today's devices, a masking pattern on a masking table can be used to distinguish between two different types of machines. In a type of lithography projection device, by exposing the entire mask pattern to the target portion, the target portion is photographed; this is followed by f stepper) 〇t ^ ^ ^ ^ ^ # description (step-and- In an alternative apparatus of the apparatus, the concavity pattern is progressively scanned under a projection beam in a given reference direction (scanning direction) while simultaneously scanning the substrate table parallel or anti-parallel to the direction, thereby irradiating Each target part; because of the general t, the fish + σ projection system will have a magnification Μ (usually < ι), the scanning speed of the substrate table V will be rabbit access 4*, Λ / Γ + ^ rod for amplification Multiply the multiplier by the scanning speed of the concealer. 'More on the lithography device. 1 See the U.S. Patent No. 6,046,79, the disclosure of which is incorporated herein by reference. In a method of manufacturing a lithographic projection device, a pattern (such as in a mask) is imaged at least partially by a layer of radiation sensitive material (resistance). On the material. Prior to this imaging step, the substrate can be subjected to various procedures such as primer, bismuth and bismuth coating and soft baking. After the exposure, the substrate can be subjected to measurements such as 皋 & 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Program 1269945

(4) 作為基礎將諸如IC等裝置的個別層加以圖案化,經圖案化 的此層隨後可進行皆預定完成一個別層之諸如蝕刻、離子 植入(摻雜)、金屬化、氡化、化學機械式拋光等各種程序 。若需要數層,則必須對於各新層重覆全體程序或其變化 程序。最後,一陣列的裝置出現在基材(晶圓)上,^些裝 置隨後藉由-種諸如割切或鋸切等技術彼此分離,此時夂 別的裝置可安裝在i體上、連接至針料。此等程序: 進-步相關資訊譬如請見“微晶片製造:帛導體處理的實 用準則(M1CI〇Chlp Fabncatl〇n : a Pracdcal Gmde t〇 Semiconductor Processing)’’ ,楚一 r, 珩二版,Peter van Zant 著, McGrawmn出版,1997’ ISBN〇.〇7_〇6725〇-4 ,此書以引用 方式併入本文中。 下文為了簡單起見可將投射系、統稱為“鏡片,,,但此名稱 應廣義解釋為涵蓋各種類型的投射系統,譬如包括折射性 光學裝置、反射性光學裝置及反射折射性系統。籍射系統 亦可包括依據任何上诚用大人2丨增 + , U上攻用方;引#、定型或控制輻射投射 的設計類型而運作之組件,此等組件亦可在下文集體或單 獨地私為_片 '並且’微影裝置可能為具有兩個或更多 個基材台(及/或兩個或更多個遮罩台)之類 “階段,,裝置中,可平行倭用么侗△ ^ f匕寻夕 」十订使用夕個台,或可在使用一或多個 其他的台暴光的同時於一弋,△ ^ 、 戍夕個0上進行預備步驟。雙階 段微影裝置璧如士 、, 广置$如彳田述於吳國專利5,969 44 98則9謂,各案以”方式 為了將更小特性加以成像,要 要在投射束中使用更短波 又 、夜-係使用紫外光⑴V)或深紫外光(DUV)至 1269945 (5) 193毫微米 至2〇毫微米Λ㈣用157或126毫微米的_轄射或)- 初羊“士的極紫外光輻射(euv)。亦提出使用帶電 y's寸別是電子束之裝置,所有這些提出的輻射類型皆 . 大又到空氣吸收,所以使用157或126毫微米輻射的裝i . 必須以一種士# β々々Jr ^ 者如虱寻^洗氣體加以沖洗,但使用EUV及帶 :粒子束之裝置則必須排空至精確標準。因而必須將此等 裝置包圍在氣密或真空緊密性隔室中。 傳、、·充上,將裝置的不同元件諸如韓射源、照明系統及⑲ · 射π統等包圍在分離的隔室中。然後,需要在即將通過投 射束的隔至之間提供具有很大直徑之氣密或真空緊密性 連接部。φ需要將不@隔室連接至真空粟或清洗氣體供應 及排放系統。 -' 在所有的微影裝置中,務必至少將遮罩、基材及投射I .. 片與振動隔離,且只在待成像的特性尺寸減小時此需求才 冒增大。進一步務必將不同隔室隔離使其不受因為譬如熱 月多脹、振動及安裝公差造成的相對移動所導致之應力、力 鲁 及力矩。因此,需要將裝置的不同隔室彼此機械性隔離, 並特別需要隔離譬如身為振動源之栗等^置。 因此已知使用金屬伸縮節來連接一經排空或清洗的微 · 影裝置的隔室之間、以及導往泵之真空導管,此等伸縮節 一 可為各種形式但/般呈圓桎形或圓錐形並具有與伸縮節 軸線垂直的褶波部。藉由製造夠大的褶波部及夠薄的伸縮 節壁,可令伸縮節對於其端點之相對縱向及側向移動及沿 著與圓柱或對於與圓錐軸線垂直的輛線之角運動產生低 -10 - 1269945 (6) 煢奪_薦 的勁度。低勁度可防止振動傳遞通過伸縮節,但習知的伸 縮節對於沿圓柱或圓錐軸線的旋轉運動係具有勁度,特別 是在伸縮節直徑夠大足以容納投射束或一大空氣或清洗 氣體流的情形尤然。因而,習知的伸縮節係保持一不良之 扭轉性振動、力及力矩的傳遞路徑。 本發明之一目的係提供一種用於微影裝置中能夠隔離 杻轉性振動、力及/或力矩之伸縮節。 根據一種微影裝置來達成此目的及其他目的,此微影裝 置包含: —一輻射乐統,其用於供應一輻射投射束; —一支撐結構,其用於支樓圖案化構件,圖案化構件係具 有依據一所需要的圖案將投射束圖案化之功用; —一基材台,其用於固持一基材;(4) As a basis for patterning individual layers of devices such as ICs, the patterned layer can then be subsequently scheduled to complete a separate layer such as etching, ion implantation (doping), metallization, deuteration, Various procedures such as chemical mechanical polishing. If several layers are required, the entire program or its changing program must be repeated for each new layer. Finally, an array of devices is present on the substrate (wafer), and the devices are then separated from each other by techniques such as cutting or sawing, at which point the device can be mounted on the body and connected to Needle material. Such procedures: For further information, see “Microchip fabrication: Practical guidelines for the treatment of germanium conductors (M1CI〇Chlp Fabncatl〇n: a Pracdcal Gmde t〇Semiconductor Processing)”, Chu Yi r, 珩 2nd edition, Peter van Zant, McGrawmn, 1997 ' ISBN 〇. 〇 7_〇 6725 〇-4, which is incorporated herein by reference. For the sake of simplicity, the projection system can be collectively referred to as "lens, but, but for the sake of simplicity. This name should be interpreted broadly to cover various types of projection systems, such as refractive optical devices, reflective optical devices, and catadioptric systems. The system may also include components that operate according to any type of design that is used by any of the above-mentioned adults, U, U, U, U, U, U, U, U, U, U, U, U, U, U Private _ slice 'and' lithography device may be a stage with two or more substrate tables (and / or two or more mask tables), in the device, can be used in parallel?侗 △ ^ f 匕 夕 夕 十 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订 订The two-stage lithography device, such as Shishi, and Guangxuan, such as the 彳田 于 in Wu Guo patent 5,969 44 98, 9 said, in each case to "image in order to image smaller features, to use shorter waves in the projection beam Also, night-time uses ultraviolet (1) V) or deep ultraviolet (DUV) to 1269945 (5) 193 nm to 2 〇 nano Λ (four) with 157 or 126 nm _ ruling or) - 初羊 "士的极Ultraviolet radiation (euv). It is also proposed to use a device with a charged y's inch and an electron beam. All of the proposed radiation types are large and air-absorbed, so the device using 157 or 126 nm radiation must be a class #β々々Jr ^ If you want to wash the gas and rinse it, the EUV and the device with the particle beam must be emptied to the exact standard. It is therefore necessary to surround these devices in an airtight or vacuum tight compartment. Passing, charging, and enclosing different components of the device, such as a Korean source, a lighting system, and a 19-channel system, in separate compartments. Then, it is necessary to provide an airtight or vacuum tight connection having a large diameter between the intervals through which the beam is to be delivered. φ requires that the @ compartment be connected to the vacuum or purge gas supply and exhaust system. -' In all lithography devices, it is important to at least isolate the mask, substrate and projection I.. from vibration, and this requirement only increases when the characteristic size to be imaged is reduced. It is further important to isolate the different compartments from stresses, forces and moments caused by relative movements such as thermal expansion, vibration and mounting tolerances. Therefore, it is necessary to mechanically isolate the different compartments of the device from each other, and in particular to isolate, for example, a chest that is a source of vibration. It is therefore known to use metal telescopic joints to connect between the compartments of an evacuated or cleaned micro-shadow device and to the vacuum conduits of the pump, which may be in various forms but generally rounded or It has a conical shape and has a pleat portion perpendicular to the axis of the telescopic joint. By making a large enough pleat portion and a thin telescopic rib wall, the relative longitudinal and lateral movement of the telescopic joint to its end point and along the angular movement of the cylinder or the line perpendicular to the axis of the cone can be produced. Low-10 - 1269945 (6) Captured the strength of _ recommended. Low stiffness prevents vibration transmission through the telescopic joint, but conventional telescopic joints have stiffness for rotational motion along the cylinder or conical axis, especially if the telescopic joint is large enough to accommodate a projected beam or a large air or purge gas The situation of the flow is especially true. Thus, the conventional telescopic section maintains a poor transmission path of torsional vibration, force and moment. It is an object of the present invention to provide a telescoping section for use in a lithography apparatus that is capable of isolating oscillating vibrations, forces and/or moments. This and other objects are achieved in accordance with a lithography apparatus comprising: - a radiation system for supplying a radiation projection beam; - a support structure for a branch patterned member, patterned The component has a function of patterning the projection beam according to a desired pattern; a substrate table for holding a substrate;

,-一投射乐統,其用於將圖案束投射在基材的1…^ 其中該輻射系統、該支撐結構、該基材台及該投射 之至少-者的至少—部份係容納在—密封的室巾,且载 -伸縮節以在該㈣的室與另—室m間提供一 合的=通道具有—縱軸線,其特徵為該伸縮節包< 一第:段L其具有沿該縱軸線螺旋形延伸之複數個福 部’使仔忒弗—段的相對端點可彼此相對旋轉;及 :第t段’其適可改變長度以補償該第-段的長度⑸ 弟一 &中的螺旋形褶波部可容許其端點進行一相 轉,但此旋轉將造成第一段 長度《化。為此,提供第 & …使伸縮節保持固定的全長。第一段網 -11 - 1269945 度變化與旋轉產生耦合,但第二段則將其退耦。特定範圍 内,伸縮“端.點總、共可以六個自纟度彼此獨立地平移^ 旋轉’伸縮節可在各個這些自由度中具有低勁度,以防止 振動傳遞過伸縮節。 伸縮節之平順的褶波部係將褶波部產生的扭轉性應力 平均地分佈於全體的伸縮節。並非將應力集中在單點,藉 此:減少伸縮節的整體磨損,因而伸縮節較不易茂漏。‘ 於高精密度應用’特別是使用者,氣體的輻射損失為 重大問題。裝置在使用之前必須徹底清潔,且平順的糟波 部譬如比摺疊部更容易清理且可更有效地清理。 口而相較於伸縮卽材料的厚度,褶波部較佳應有大的 曲率半徑且譬如至少更大五倍’稽波部可為正弦曲線狀且 峰部與谷部較佳彼此呈平行行進。 罘二段可能為與第一段相對應但反向捲繞之螺旋形褶 波部的一段、或為圓周褶波部的一段。 第一段至少應有一種旋轉對稱性的基本形式。 根據本發明的另-型態,提供一種包含以下步驟之裝置 製造方法: 楗供ϋ辕射敏感性材料至少部丫分地覆蓋之一基材; 使用 輪射糸統提供一輕射投射束; —使用圖案化構件對於投射束的剖面賦予一圖案; -將轄射的圖案束投射在㈣敏感性材料層的—目標部上, 其特徵為以下步驟: 提供一伸縮節,藉以將用於包圍該輻射系統、該支撐結 -12 · 1269945 (8) 發明:_頃繽頁 —者的至少一部份之一密 加以導通,該伸縮節設有 及一適於容納該第一段的 構、該基材台及該投射系統其中 封的隔室與另一隔室或_泵之間 一具有螺旋形褶波部之第_段、 長度變化之第二段。 雖然本文特別描述將根撼士 T艨本發明的裝置使用在1C製造 中,應明確瞭解此裝置具有哞夕# ^ 、有°午多其他可能的應用,譬如可 使用於製造整合式光學系统 、 丁、、死磁域記憶體的引導及偵測型 式、液晶顯示面板、薄膜磁頭等。熟悉此技藝者瞭解:在 此等替代性應用的範圍中,文中若使用任何“光罩”、“晶 圓或“晶粒’’名稱,均岸分另丨丨LV街 A » πσ ^ J k刀別以更一般性用語“遮罩,,、“基 材’’及“目標部”加以取代。 本文件中利輪射”及“束’’來涵蓋所有類型的電磁輻射 包括紫外光輻射(譬如具有365、24 8、193、157或126毫 微米波長)及EUV(極紫外光輻射,譬如具有5至2〇毫微米的 波長)、及粒子束諸如離子束或電子束。 現在僅由範例參照示意圖來描述本發明的實施例,其中: 圖1描述根據本發明的一實施例之一微影投射裝置; 圖2至6為可使用於本發明實施例中之伸縮節的立體圖。 圖中對應的符號代表對應的元件。 實施例1 圖1示意顯示根據本發明的一特定實施例之一微影投射 裝置,此裝置包含·· •一輻射系統Ex,1L,其用於供應一輻射投射束ρβ(譬如 EUV輻射)並在此特定情形下亦包含—輻射源丄a ; -13 - 1269945 1 j mmmm 第物體台(遮罩台)MT,其設有一遮罩固持件藉以固 持住一遮罩Μ A (譬如光罩),並連接至第一定位構件藉以 將遮罩相對於物項PL精確地定位; 第一物體台(基材台)W T,其設有一基材固持件藉以固 持住一基材W(譬如一塗有阻劑的矽晶圓),並連接至第 二定位構件藉以將基材相對於物項PL精確地定位; -一投射系統(“鏡片,,)PL(譬如一鏡組),其用於將遮罩MA 的一受輻照部成像在基材W的一目標部C(譬如包含一 或多個晶粒)上。 如此處所描述,此裝置為反射型(亦即具有一反射性遮 罩)’但其通常譬如亦可為透射型(具有一透射性遮罩)。或 者,此裝置可採用另一種類的圖案化構件,諸如一上述類 型的可程式化鏡陣列。 源LA(譬如一放電或雷射生成電漿源)產生一輻射束,譬 如,此束直接饋送入或在橫越調控構件(諸如一束放大器 Ex)之後饋送入一照明系統(照明器)IL,照明器匕可能包含 5周整構件AM藉以設定束中的強度分佈之外及/或内徑向 犯圍(常分別稱為σ -外及σ _内)。此外,其一般包含各種 外部組件,諸如一整合器ΙΝ及一聚光器c〇。利用此方式 衝手在遮罩MA上的束PB在其剖面具有所需要的均勻度 及強度分佈。 應注意,對於圖!,源LA可能位於微影投射裝置的殼體 内(譬如,若源LA為汞燈時所常見的情形),但其亦可能遠 離微影投射裝置,而將其產生的轄射束引入裝置内(譬如 (10) 1269945 發明說嚷繽頁 以適當的導鏡作為輔助);源la 為叉激準分子雷射時當 為傻a方案。本發明及申請專利範圍涵蓋這兩種方案。 束PB隨後㈣固持在—遮罩台价上之遮罩MA相交戴 其^^橫越遮罩心之後係通過鏡片以而將束Μ聚焦在 基材W的-目標紅上。以第二定位構件(及干涉測量構件 IF)作為辅助’基材台WT可精確地移動,譬如將不同目標 部C定位在束PB的路徑中。同樣士也,譬如從遮罩資料庫機 械式取出遮罩MA之後、或在掃描期間,可利用第一定位 構件將遮罩MA相對於束_徑精確地定位。—般可藉由 -㈣㈣__定位)及_短行程模組(細微定位)作為 輔助令物體台MT、'打產生移動,圖丨未明確顯示。作在 晶圓步進機(而非步進及掃描裝置)的情形中,遮罩台町 可以只連接至一短行程致動器、或可能為固定式。 所描述的裝置可以使用在兩種不同方法中: 在步進模式中,遮罩台河丁保持大致靜態,且_整體的 遮罩影像一次投射(亦即單一 “閃光,,)在一目標部C上,基 材σ WTI^後在:^及/或y方向移位,藉以用束pB輻照一不同 的目標部C。 2.在掃描模式中,適用大致相同的情境,但差異在於並非 用單一“閃光”將一給定目標部c暴光。取而代之,遮罩台 MT可以速度k在一給定方向(所謂掃描方向,譬如^方向) 中移動,造成投射束PB掃描於一遮罩影像上方;同時,基 材台WT以速度V = M〉同時在同方向或反方向中移動,其 中Μ為鏡片PL的放大率(通常,1/4或1/5),可科用此方 -15 - 1269945a projection system for projecting a pattern beam onto a substrate, wherein at least a portion of the radiation system, the support structure, the substrate table, and at least one of the projections are contained in - a sealed chamber towel, and the load-retracting joint provides a combined channel between the chamber (4) and the other chamber m having a longitudinal axis, characterized by the expansion joint package < a: segment L having a The plurality of blessings of the longitudinal axis extending in a spiral shape enable the opposite ends of the scorpion scorpion to rotate relative to each other; and: the t-th segment can be changed in length to compensate for the length of the first segment (5) The spiral pleats in the middle allow the end point to undergo a phase transition, but this rotation will cause the first length to be "transformed." To this end, the first & ... is provided to keep the telescopic section a fixed full length. The first segment of the network -11 - 1269945 degree change is coupled with the rotation, but the second segment decouples it. In a specific range, the telescopic "end. point total, a total of six self-twisting degrees can be translated independently of each other. ^ Rotating' expansion joints can have low stiffness in each of these degrees of freedom to prevent vibration from passing through the expansion joint. The smooth pleat portion distributes the torsional stress generated by the pleated portion evenly over the entire expansion joint. The stress is not concentrated at a single point, thereby reducing the overall wear of the expansion joint, and thus the expansion joint is less likely to leak. 'In high-precision applications' especially for users, the radiation loss of gas is a major problem. The device must be thoroughly cleaned before use, and the smoothness of the device is easier to clean and more effectively clean than the fold. The pleat portion preferably has a large radius of curvature and is, for example, at least five times larger than the thickness of the stretchable raft material. The hop portion may be sinusoidal and the peaks and valleys preferably travel parallel to each other. The second segment may be a segment of the helical pleat portion corresponding to the first segment but reversely wound, or a segment of the circumferential pleat portion. The first segment should have at least one basic form of rotational symmetry. According to another aspect of the present invention, there is provided a device manufacturing method comprising the steps of: providing a radiation sensitive material at least partially covering a substrate; providing a light projecting beam using a sputtering system; - using a patterned member to impart a pattern to the profile of the projected beam; - projecting the conditioned pattern beam onto the target portion of the (4) sensitive material layer, characterized by the following steps: providing a telescopic section that will be used to surround The radiation system, the support knot -12 1269945 (8) invention: at least one of the at least one part of the splicing page is closely connected, the expansion joint is provided with a structure suitable for accommodating the first segment, The substrate table and the partition between the compartment and the other compartment or pump of the projection system have a first segment of the spiral pleat portion and a second segment of the length change. Although specifically described herein, the root gentleman T艨 The device of the present invention is used in the manufacture of 1C, and it should be clearly understood that the device has the other possible applications, such as the use of the integrated optical system, the D, and the dead magnetic domain memory. Guide and detection type , liquid crystal display panel, thin film magnetic head, etc. Those skilled in the art understand that in the scope of such alternative applications, if any "mask", "wafer or "grain" name is used in the text,丨LV Street A » πσ ^ J k Knife is replaced by the more general terms “mask,, “substrate” and “target”. This document includes “boom” and “bundle” to cover all Types of electromagnetic radiation include ultraviolet radiation (such as having a wavelength of 365, 24 8, 193, 157, or 126 nm) and EUV (extreme ultraviolet radiation, such as having a wavelength of 5 to 2 nanometers), and particle beams such as ions. EMBODIMENT OF THE INVENTION Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying drawings, in which: FIG. 1 illustrates a lithographic projection apparatus in accordance with an embodiment of the invention; FIGS. A perspective view of the telescopic section in the middle. Corresponding symbols in the figures represent corresponding elements. Embodiment 1 FIG. 1 is a view schematically showing a lithography projection apparatus according to a specific embodiment of the present invention, which comprises a radiation system Ex, 1L for supplying a radiation projection beam ρβ (such as EUV radiation) and In this particular case, the radiation source 丄a is also included; -13 - 1269945 1 j mmmm The first object stage (mask stage) MT is provided with a mask holder for holding a mask Μ A (such as a mask) And connected to the first positioning member to accurately position the mask relative to the item PL; the first object table (substrate table) WT, which is provided with a substrate holder for holding a substrate W (such as a coating) a resistive germanium wafer) and coupled to the second positioning member to accurately position the substrate relative to the item PL; a projection system ("lens,") PL (such as a mirror) for An irradiated portion of the mask MA is imaged onto a target portion C of the substrate W (e.g., comprising one or more dies). As described herein, the device is reflective (i.e., has a reflective mask) 'but it may, for example, also be transmissive (with a transmissive mask). Alternatively, the apparatus may employ another type of patterned member, such as a programmable mirror array of the type described above. Source LA (e.g., a discharge or laser generated plasma source) produces a beam of radiation, such as a direct feed of the beam. Into or after traversing a control member (such as a beam of amplifiers Ex) into an illumination system (illuminator) IL, which may include a 5-week integral member AM to set the intensity distribution outside the beam and/or the inner diameter In addition, it is generally referred to as σ-outer and σ_in. In addition, it generally contains various external components, such as an integrator and a concentrator c. In this way, the hand is placed on the mask MA. The beam PB has the required uniformity and intensity distribution in its profile. It should be noted that for the diagram!, the source LA may be located in the housing of the lithographic projection device (for example, if the source LA is a mercury lamp), However, it is also possible to move away from the lithographic projection device and introduce the generated beam into the device (for example, (10) 1269945, the invention says that the page is supplemented by an appropriate guide lens; the source la is a cross-excimer laser Time is a silly a program. And the scope of the patent application covers both schemes. The bundle PB is then (4) held at the mask-price of the mask MA intersects the wearer ^^ traverses the mask core and then passes the lens to focus the bundle on the substrate W - the target red. With the second positioning member (and interferometric member IF) as an aid, the substrate table WT can be accurately moved, for example, to position different target portions C in the path of the beam PB. After the mask database mechanically removes the mask MA, or during scanning, the first positioning member can be used to accurately position the mask MA relative to the beam_path. - generally by - (four) (four) __ positioning) and _ short stroke The module (fine positioning) acts as an aid to the object table MT, 'playing movement, and the figure is not clearly displayed. In the case of a wafer stepper (rather than a stepper and scanning device), the mask can be connected to only a short-stroke actuator, or it may be stationary. The described device can be used in two different ways: In step mode, the mask is still substantially static, and the overall mask image is projected once (ie a single "flash,") in a target section. On C, the substrate σ WTI^ is shifted in the ^ and / or y directions, whereby a different target portion C is irradiated with the beam pB. 2. In the scan mode, approximately the same situation is applied, but the difference is not Instead of exposing a given target portion c with a single "flash", the mask table MT can be moved in a given direction (so-called scanning direction, such as the ^ direction), causing the projection beam PB to be scanned in a mask image. Above; at the same time, the substrate table WT moves at the same speed or in the opposite direction at the speed V = M>, where Μ is the magnification of the lens PL (usually 1/4 or 1/5), which can be used for this purpose - 15 - 1269945

Lgy-纜賀 式使一較大目標部c暴光而不須犧牲解析度。 雖然圖1中未顯示,將裝置的束路徑排空成深度真允 總壓力必須低達1〇-6毫巴且其中碳氫化合物具有1〇4或 ίο·9毫巴的分壓。此嚴格需求之目的在於防止鏡、遮罩及 晶圓的污染。為了能夠達到及維持此真空程度,將穿置的 各段譬如輻射源LA、照明系統IL、遮罩階段、投射系統 P L及基材階段保持在分離的真空包圍件中,真空包圍件伏 連接至適當類型與產能之真空泵。 為了將各種組件及其泵連接在一起、讓投射束、測量束 或氣體流通過、並防止振動、力及力矩傳遞至隔室及傳遞 於至之間,採用隔離伸縮節。為了防止在相對於伸縮節 軸線之扭轉性(Rz)、縱向(Z)及側向(χ,γ)及角度性(R\ r ) 方向之振動、力及力矩的傳遞,本發明所用的隔離伸縮節 係包含具有螺旋形權波部之至少一段、及用於容納縱向移 動之至少一段。 下文描述係針對XYZ正交座標系,其中z軸為未受應力 的伸縮節之縱軸線,且伸縮節的一端位於χγ平面中’此 座標系中扭轉性運動可稱為Rz,應注意使用此座標系僅為 了方便描述而不應暗示伸縮節相對於地面或此裝置中所 界定的任何其他座標系具有任何特定之定向。並且,對於 伸縮節的一縱軸線之描述不應代表伸縮節需為圓柱形或 具有一直線狀縱軸線。 圖2顯不可使用於本發明中之一隔離伸縮節2〇的第一範 例隔離伸縮節20大致呈圓柱形並包含三個運動容納段: -16 - 1269945The Lgy-cable method exposes a large target c without sacrificing resolution. Although not shown in Figure 1, the beam path of the device is evacuated to a depth that the total pressure must be as low as 1 -6 mbar and where the hydrocarbon has a partial pressure of 1 〇 4 or ί ο 9 mbar. The purpose of this stringent requirement is to prevent contamination of mirrors, masks, and wafers. In order to be able to achieve and maintain this degree of vacuum, the segments that are worn, such as the radiation source LA, the illumination system IL, the mask stage, the projection system PL, and the substrate stage, are held in separate vacuum enclosures that are connected to the vacuum enclosure A vacuum pump of the appropriate type and capacity. Isolation expansion joints are used to connect the various components and their pumps together, to allow the projection beam, the measurement beam or gas flow to pass, and to prevent vibration, force and torque from being transmitted to and between the compartments. In order to prevent the transmission of vibration, force and moment in the direction of torsion (Rz), longitudinal (Z) and lateral (χ, γ) and angular (R\r) directions with respect to the axis of the expansion joint, the isolation used in the present invention The telescoping section includes at least one segment having a helical weight portion and at least one segment for accommodating longitudinal movement. The following description is for the XYZ orthogonal coordinate system, where the z-axis is the longitudinal axis of the unstressed expansion joint, and one end of the expansion joint is located in the χγ plane. The torsional motion in this coordinate system can be called Rz. The coordinate system is for convenience of description only and should not imply that the telescoping section has any particular orientation with respect to the ground or any other coordinate system defined in the device. Also, the description of a longitudinal axis of the telescoping section should not mean that the telescopic section needs to be cylindrical or have a linear longitudinal axis. Figure 2 shows a first example of an isolated telescoping section 2 that is not usable in the present invention. The isolated telescoping section 20 is generally cylindrical and comprises three movement receiving sections: -16 - 1269945

/具有平順的螺旋形褶波部22之中段21、及具有圓周稽波 部25、26之外段23、24。設置平坦的圓桎形端部27、 一 Zq 以利將伸縮節安裝至一隔室或真空導管,具有八個褶波部 ,各褶波部大致繞伸縮節縱軸線延伸半圈,利用伸縮節2〇 形成從一真空室到另一真空室之一閉合的通道,此實施例 中’伸縮節的縱軸線對應於通道的縱軸線。 螺旋形褶波部22對於伸縮節20縱轴線呈30。至60。、較件 45 °角的配置。若一扭轉性(Rz)力施加於端點2 7、2 8之間,/ has a segment 21 of the smooth spiral pleat portion 22, and has segments 25, 24 outside the circumferential wave portions 25, 26. A flat rounded end portion 27, a Zq is provided to facilitate the mounting of the telescopic joint to a compartment or vacuum conduit, having eight pleat portions, each pleat portion extending substantially a half turn around the longitudinal axis of the telescopic joint, utilizing a telescopic joint 2〇 forms a closed passage from one of the vacuum chambers to the other of the vacuum chambers, in this embodiment the longitudinal axis of the telescopic joint corresponds to the longitudinal axis of the passage. The spiral pleat portion 22 is 30 with respect to the longitudinal axis of the telescopic joint 20. To 60. Compared with the 45 ° angle configuration. If a torsional (Rz) force is applied between the endpoints 2, 7 and 8,

中段2 1的螺旋形褶波部22將容許外段23、24的一相對旋轉 運動,但如此將改變縱(Z)方向的長度。但因為藉由外段^ 、24的圓周褶波部25、26來容納此長度變化,所以不具有 私點23、24的縱向運動。基本上,雖然螺旋形褶波部22將Z 與Rz運動加以耦合,外段藉由容納Z運動使這些運動退耦。The helical pleat portion 22 of the middle section 21 will permit a relative rotational movement of the outer segments 23, 24, but this will change the length in the longitudinal (Z) direction. However, since the length variation is accommodated by the circumferential pleating portions 25, 26 of the outer segments ^, 24, there is no longitudinal movement of the private points 23, 24. Basically, although the helical pleats 22 couple the Z and Rz motions, the outer segments decouple these motions by accommodating the Z motion.

言月瞭解,伸縮節尺寸及各種褶波部的尺寸及數量可能 據所需要的真空路徑尺寸及必須容納的運動範圍而改 1亚以圖j顯不,圖3描述可使用於本發明之一隔離伸縮 、第一範例,此伸縮節具有與伸縮節2〇相同的功能但 =比其長度更大的半徑,伸縮節3〇的元件進行與伸縮節 、一件相同之功旎但具有減丨〇的編號,伸縮節3 〇具有十 棬’皮°卩,各褶波部大致繞縱軸線延伸半圈。 圖4 -員不根據本發明之一隔離伸縮節4〇的第三範例, :節4〇中提供兩個螺旋形段各螺旋形段41、, 二有,致延伸四分之—圈的八個螺旋形指波部43、44。 τ'㈣&41、42的螺旋形褶波部43、料呈反向轉動, -17- 1269945It is understood that the size of the telescopic section and the size and number of various pleat sections may be changed according to the required vacuum path size and the range of motion that must be accommodated. Figure 3 depicts one of the features of the present invention. Isolation and expansion, the first example, this expansion joint has the same function as the expansion joint 2〇 but = a radius larger than its length, the expansion joint 3〇 element performs the same function as the expansion joint, but has the same reduction The number of the cymbal, the telescopic section 3 〇 has a ten 棬 皮 卩, and each pleat portion extends approximately half a circle around the longitudinal axis. Figure 4 - A third example of the isolation of the telescopic section 4 from one of the members of the present invention: in the section 4, two spiral segments are provided, each of which has a spiral segment 41, and two have an extension of the quarter-turn of the eight The spiral fingers are 44, 44. The spiral pleats 43 of τ'(4) & 41, 42 are turned in the opposite direction, -17-1262945

中者為順時針方向而另一者為逆時針方向。利用此方式 :一個螺㈣段具有容納另_者、縱向運動之作用,可參照 &加至安裝凸緣49的一順時針扭矩之範例加以解釋,其中 安裝凸緣48受到固定。在此力的影響下,螺旋形段㈣ 捲:及緞向收縮,而螺旋形段42則將“鬆綁,,及縱向延伸 。若兩個螺旋形段具有同樣構造但呈鏡像,則伸縮節40 將保持固定的全長。 為方便起見在伸縮節4〇中提供圓柱形部C、47,亦 c主思到,伸縮節40將藉由中間部45相對於端點的旋轉來 容納兩端之一相對Z位移,,伸縮節的壓縮將造成兩 ‘紅形部捲緊,兩者將造成中段反時針旋轉,當然亦可容 納扭轉性及縱向運動兩者之組合。 為了方便衣造並依需要設定伸縮節的全長,在伸縮節4〇 中叹置圓柱形部45、46、47,亦可看出螺旋形褶波部Μ 、44形成為一標稱圓柱形表面中的嵌件並具有較尖銳的角。 圖5 ,、’、員不可使用於本發明之一隔離伸縮節$ 〇的第四範例 ,此範例具有兩個螺旋形段51、52及一中段55,在各螺旋 形1又〕1、中設有大致延伸半圈之反向旋轉的十五個螺旋 形褶波部53、54,以及圓周褶波部56的一中段55。反向 捲繞”的螺旋形段51、52具有如同第三範例之功能,但中 & 供容納縱向(z)、侧向(χ&γ)及角度性U運動 之額外能力,中段55亦藉由容納以一端旋轉的某些縱向移 動來降低對於扭轉性(Rz)運動之勁度。 圖6喊不可使用於本發明之一隔離伸縮節60的第五範例 -18 - (14) 1269945The middle is clockwise and the other is counterclockwise. In this way: a screw (four) segment has the effect of accommodating the longitudinal movement, which can be explained by reference to an example of a clockwise torque applied to the mounting flange 49, wherein the mounting flange 48 is fixed. Under the influence of this force, the spiral segment (4) roll: and the satin contraction, while the spiral segment 42 will "loose, and extend longitudinally. If the two spiral segments have the same configuration but are mirror images, the expansion joint 40 The full length will be maintained. For the sake of convenience, the cylindrical portions C, 47 are provided in the telescopic section 4, and it is also conceivable that the telescopic section 40 will accommodate the two ends by the rotation of the intermediate portion 45 with respect to the end point. A relative Z displacement, the compression of the expansion joint will cause the two 'red parts to be wound up, the two will cause the middle part to rotate counterclockwise, of course, can also accommodate the combination of torsional and longitudinal movement. For the convenience of clothing and as needed The full length of the telescopic joint is set, and the cylindrical portions 45, 46, 47 are slanted in the telescopic joint 4, and it can be seen that the spiral pleat portions 44, 44 are formed as inserts in a nominal cylindrical surface and have Sharp corners. Figure 5, ', can not be used in the fourth example of the isolated expansion joint $ 本 of the present invention, this example has two spiral segments 51, 52 and a middle segment 55, in each spiral 1 In the middle, there are fifteen spiral pleats with a reverse rotation that extends approximately half a turn. The wave portions 53, 54 and a middle portion 55 of the circumferential pleat portion 56. The reversely wound "spiral segments 51, 52 have functions as the third example, but the middle & accommodates the longitudinal (z), lateral The additional capability of (χ & gamma) and angular U motion, the middle section 55 also reduces stiffness for torsional (Rz) motion by accommodating some longitudinal movements that rotate at one end. Figure 6 illustrates a fifth example of an isolated expansion joint 60 that may not be used in the present invention. -18 - (14) 1269945

扩沒與第三範例(圖4)之相似處在於:具有反向“捲繞,,的螺 、62,但具有八個更為圓弧狀且大致延伸半圈之 褶波部63、64,並提供安裝用之圓柱形端段65、a。 辟如圖2至6所不,褶波部為平順狀並且相較於伸縮節材料 如金屬)厚度具有一大的曲率半徑,各項上述範例中, 托波部的峰部及谷部彼此呈平行行進並對於伸縮節縱軸 線形成相同的角度。The expansion is similar to the third example (Fig. 4) in that it has a reversely "wound," snail, 62, but has eight more arcuate and substantially half-turn pleat portions 63, 64. And providing a cylindrical end segment 65, a for installation. As shown in Figures 2 to 6, the pleat portion is smooth and has a large radius of curvature compared to the thickness of the expansion joint material such as metal. The peaks and valleys of the tobo portion travel parallel to each other and form the same angle with respect to the longitudinal axis of the telescopic joint.

任何方便形式之終止部設置於任一端或兩端上Any convenient form of termination is placed on either or both ends

μ應注意,雖然已經描述大致呈圓柱形式之隔離伸縮節的 範例’伸縮節亦可能具有其他形式。譬如,伸縮節的基本 形式(亦即褶波部的疊設形狀)可能具有卵形、正方形或其 他多角形剖面。一般而言,伸縮節的基本形式可為一稜錐 ,其代表具有類似、相等及平行多角形的端點及平行四邊 形的側邊之形狀;一平載頭稜錐’其代表具有類似但不相 等多角形的端點之形狀;或為圓錐形,其中一圓柱係為核 心的-限制性範例。並且,伸縮節的功能段可能相鄰、或 由不需有低勁度且呈任何習知形式之段所*隔。可將亦有 上述的所有隔離伸縮節必須由一種諸如金屬等彈性 料製成,這些裝置的一種目前較佳之製造方法係為電積 形,利用此方法構成一形式的適當形狀,然後以一電鍍技 術覆盖一適當厚度的金屬層’然後譬如藉由溶解、融化或 機械構件來移除此形式以留下獨立的金屬層。 上文雖已描述本發明的特定實施例,應瞭解可以上沭以 外的方式來實施本發明,此描述無意限制本發明。 -19 - 1269945 (15) 發明說朝繽頁 元件符號對照表 20 隔離伸縮節 2 1 中褶波部 22 螺旋形褶波部 23 外段 24 外段 25 圓周褶波部 26 圓周褶波部μ It should be noted that although the example of a generally cylindrical isolated telescopic joint has been described, the telescopic section may have other forms. For example, the basic form of the telescopic section (i.e., the stacked shape of the pleat portion) may have an oval shape, a square shape, or other polygonal cross-section. In general, the basic form of the telescopic section may be a pyramid which represents the shape of the side points having similar, equal and parallel polygons and the sides of the parallelogram; a flat head pyramid 'which represents similar but not equal The shape of the end point of the polygon; or a conical shape, one of which is a core-restricted example. Also, the functional segments of the telescoping section may be adjacent or separated by segments that do not require low stiffness and are in any conventional form. It is also possible to make all of the isolated expansion joints described above from an elastic material such as metal. One of the currently preferred manufacturing methods of these devices is an electrical shape, by which a suitable shape of a form is formed and then electroplated. The technique covers a metal layer of a suitable thickness 'and then removes this form, such as by dissolving, melting or mechanical components, to leave a separate metal layer. While the invention has been described with respect to the specific embodiments of the present invention, it is understood that the invention may be practiced otherwise. -19 - 1269945 (15) Invention said to the table page Component symbol table 20 isolation expansion joint 2 1 middle pleat portion 22 spiral pleat portion 23 outer section 24 outer section 25 circumferential pleat portion 26 circumferential pleat portion

27 平坦圓周端部 28 平坦圓周端部 30 隔離伸縮節 40 隔離伸縮節 4 1 螺旋形段 42 螺旋形段 43 螺旋形褶波部 44 螺旋形褶波部 45 圓柱形部 46 圓柱形部27 Flat circumferential end 28 Flat circumferential end 30 Isolated telescopic joint 40 Isolated telescopic joint 4 1 Spiral section 42 Spiral section 43 Spiral pleated part 44 Spiral pleated part 45 Cylindrical part 46 Cylindrical part

47 圓柱形部 48 安裝凸緣 49 安裝凸緣 50 隔離伸縮節 5 1 螺旋形段 52 螺旋形段 53 螺旋形褶波部 54 螺旋形褶波部 55 中段 56 圓周褶波部 60 隔離伸縮節 -20 - 1269945 (16) 6 1 螺旋形段 62 螺旋形段 63 圓弧形褶波部 64 圓弧形褶波部 65 圓柱形端段 66 圓柱形端段 AM調整構件 C 目標部 C〇聚光器47 Cylindrical part 48 Mounting flange 49 Mounting flange 50 Isolation expansion joint 5 1 Spiral section 52 Spiral section 53 Spiral pleated part 54 Spiral pleated part 55 Middle section 56 Circumferential pleated part 60 Isolation expansion joint -20 - 1269945 (16) 6 1 Spiral section 62 Spiral section 63 Circular pleat portion 64 Circular pleat portion 65 Cylindrical end section 66 Cylindrical end section AM adjustment member C Target section C concentrator

Ex 輻射系統(束放大器) IF 干涉測量構件 IL 輻射系統(照明系統) IN 整合器 L A 輪射源 MA遮罩 MT第一物體台(遮罩台) PB 投射束 PL 投射系統(鏡片)Ex Radiation System (Beam Amplifier) IF Interferometric Component IL Radiation System (Lighting System) IN Integrator L A Roller Source MA Mask MT First Object Table (Mask Table) PB Projection Beam PL Projection System (Lens)

Rx 角度性方向 Rv 角度性方向 Rz 扭轉性方向 W 基材 WT第二物體台(基材台) X 側向方向 Y 側向方向 Z 縱向方向 -21 -Rx angular direction Rv angular direction Rz torsional direction W Substrate WT second object table (substrate table) X Lateral direction Y Lateral direction Z Longitudinal direction -21 -

Claims (1)

126^4^18206號專利申請案 中文申請專利範圍替換本(95年6月) 拾、申請專利範圍: .,:乂乂]心f i 1 · 一種微影投射裝置,包含 —一輻射系統,其用於提供一輻射投射束; —支撐結構,其用於支撐圖案化構件,該圖案化構件 具有依據一所需要的圖案將該投射束圖案化; —一基材台’其用於固持一基材; —投射系統,其用於將該經圖案化的束投射在該基材 的一目標部上; 其中該輻射系統、該支撐結構、該基材台及該投射系 統中之至少一者的至少一部份係容納在一密封室中,且 設置一伸縮節以在該密封的室與另一室或一泵之間提 供一閉合的通道,該通道具有一縱軸線;其特徵為該伸 縮節包含: 一第一段,其具有繞該縱軸線呈螺旋形延伸之複數個 平順的褶波部,使得該第一段的相對端點可彼此相對旋 轉;及 一第二段,其適可改變長度以補償該第一段的長度變 化。 2·如申請專利範圍第1項之裝置,其中該第二段係具有複 數個平順的褶波部以相反於該第一段之平順的褶波部 之方向繞該縱軸線呈螺旋形延伸。 3·如申請專利範圍第2項之裝置,其中該第二段大致為該 第一段的一鏡像。 4.如申請專利範圍第1項之裝置,其中該第二段係具有與126^4^18206 Patent Application Chinese Patent Application Range Replacement (June 95) Pickup, Patent Application Range: .,:乂乂]心 fi 1 · A lithography projection device, including a radiation system, For providing a radiation projection beam; a support structure for supporting a patterned member, the patterned member having a pattern of the projection beam according to a desired pattern; a substrate table for holding a substrate a projection system for projecting the patterned beam onto a target portion of the substrate; wherein the radiation system, the support structure, the substrate table, and at least one of the projection systems At least a portion is received in a sealed chamber and a telescoping section is provided to provide a closed passage between the sealed chamber and another chamber or a pump, the passage having a longitudinal axis; The section includes: a first segment having a plurality of smooth pleat portions extending helically about the longitudinal axis such that opposite ends of the first segment are rotatable relative to each other; and a second segment adapted Change the length to make up The length of the first segment change. 2. The device of claim 1, wherein the second segment has a plurality of smooth pleat portions extending helically about the longitudinal axis opposite the direction of the smooth pleat portions of the first segment. 3. The device of claim 2, wherein the second segment is substantially a mirror image of the first segment. 4. The device of claim 1, wherein the second segment has 1269945 該縱線呈垂直延伸之複數個平順的褶波部。 5·如申請專利範圍第i、2、3或4項之裝置,進一步包含一 第三段’該第三段具有與該縱軸線呈垂直延伸之複數個 平順的褶波部。 6·如申請專利範圍第1、2、3或4項之裝置,其中該等平順 的栩波部之峰部與谷部為平行。 7 ·如申凊專利範圍第1、2、3或4項之裝置,其中該等平順 的獨波部之峰部與谷部相對於該伸縮節的縱軸線呈相 同的角度。 8 ·如t 專利範圍第1、2、3或4項之裝置,其中相較於該 伸縮節材料的厚度,該等平順的褶波部具的曲 徑。 9·如甲請專利範圍第1、2、 的賴波部為正弦曲線狀。 10·:::專利範圍第卜2、3或4項之裝置,其中該第—段 /、有"於四個到三十個平順的稽波部。 = 項之襄置,其中該 ==㈣係繞該縱軸線延伸四分之一圈。 13·如申請專利範圍第i、2、 構包含-遮罩台藉以固持、、X支撐結 ⑷如申請專利範圍第卜2、 ·4二 統包含-輻射源。 員之羞置,其中該輻射系 12699451269945 The longitudinal line is a plurality of smooth pleats extending vertically. 5. The device of claim i, 2, 3 or 4, further comprising a third segment' wherein the third segment has a plurality of smooth pleat portions extending perpendicularly to the longitudinal axis. 6. A device as claimed in claim 1, 2, 3 or 4, wherein the peaks of the smooth chopping portions are parallel to the valley portions. 7. The device of claim 1, 2, 3 or 4, wherein the peaks and valleys of the smoothed solitary portion are at the same angle with respect to the longitudinal axis of the telescopic joint. 8. The device of clause 1, 2, 3 or 4 of the scope of the invention, wherein the smooth pleat portion has a mean diameter compared to the thickness of the stretch joint material. 9. A Laibo section of the patent range 1 and 2, for example, is sinusoidal. 10·::: The device of the second, third or fourth patent range, in which the first paragraph /, has " in four to thirty smooth inspections. = The setting of the item, where the == (d) extends a quarter of a turn around the longitudinal axis. 13. If the scope of application for patents is i, 2, the structure includes - the mask is supported by the support, and the X is supported (4) as in the scope of the patent application 2, the system contains the radiation source. The shame of the staff, the radiation system 1269945 15. 一種製造一積體電路之方法,包含以下步驟: —供一基材’ έ亥基材至少邮於·认jj;丨 / °卩伤地叉到一層輻射敏感性 材料所覆盍; —利用一輻射系統提供一輻射投射束; -利用圖案化構件對於該投射束的剖面賦予一圖案; •將該經圖案化的輻射束投射在該層輻射敏感性材料 的一目標部上, 其特徵為以下步驟:15. A method of fabricating an integrated circuit comprising the steps of: - providing a substrate for at least one of the substrates of the substrate; and arranging the layer of radiation sensitive material; Providing a radiation projection beam using a radiation system; - applying a pattern to the profile of the projection beam using a patterning member; - projecting the patterned radiation beam onto a target portion of the layer of radiation-sensitive material, characterized For the following steps: 提:共-伸縮節,以將用於包圍該輻射系統、該支撐結 密Μ ^基材台及該投射系統其中—者的至少—部份之一 具有一隔至與另一隔室或一泵之間相導通,該伸縮節係 二一包含平順的褶波部之第一段、及一適於容納該第 1又的長度變化之第二段。Providing: a total-stretching section for having one of at least one of the portions for enclosing the radiation system, the support junction, and the projection system having a compartment to be separated from another compartment or The pumps are electrically connected to each other, and the telescopic section 21 includes a first section of the smooth pleat portion and a second section adapted to accommodate the first length change.
TW091118206A 2001-08-15 2002-08-13 Lithographic apparatus, device manufacturing method and device manufactured thereby TWI269945B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102003593A (en) * 2010-12-13 2011-04-06 浙江银轮机械股份有限公司 Corrugated tube and helix tube combined displacement compensator

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10212161B4 (en) * 2002-03-19 2007-01-04 Maier Jun., Jakob Milk hose with shock absorbing area
JP3984898B2 (en) * 2002-09-18 2007-10-03 キヤノン株式会社 Exposure equipment
FR2848497B1 (en) * 2002-12-13 2007-02-16 Rz Engineering METHOD FOR MANUFACTURING A TRANSMISSION DEVICE PROTECTION BELL ENVELOPE AND ENVELOPE OBTAINED BY CARRYING OUT THE METHOD
US6870600B2 (en) * 2003-01-13 2005-03-22 Nikon Corporation Vibration-attenuation devices and methods using pressurized bellows exhibiting substantially zero lateral stiffness
DE102005035597A1 (en) * 2005-07-29 2007-02-01 Robert Bosch Gmbh Bellows for a self-energizing, electro-mechanical disc brake and disc brake with such a bellows
NL1036957A1 (en) * 2008-06-13 2009-12-15 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US8441615B2 (en) * 2008-09-04 2013-05-14 Nikon Corporation System for isolating an exposure apparatus
US9206923B2 (en) * 2013-03-14 2015-12-08 Fisher Controls International Llc Rotary shaft seals
JP6278427B1 (en) * 2017-01-05 2018-02-14 レーザーテック株式会社 Optical device and vibration isolation method
CN109343312B (en) * 2018-09-29 2020-07-14 张家港奇点光电科技有限公司 Automatic air door mechanism of exposure machine
DE102021208843A1 (en) * 2021-08-12 2023-02-16 Carl Zeiss Smt Gmbh Projection exposure system for semiconductor lithography with a connecting element

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3318335A (en) * 1963-10-15 1967-05-09 Chester M Heller Torsional pipe coupling
US4125130A (en) * 1975-02-04 1978-11-14 Doryokuro Kakunenryo Kaihatsu Jigyodan Bellows permitting twisting movement
JPS5776362A (en) 1980-10-31 1982-05-13 Hitachi Ltd Bellows
DE8200937U1 (en) 1982-01-16 1982-09-16 Elastogran Kunststoff-Technik GmbH, 2844 Lemförde Pleated cuff
JPS6053274A (en) * 1983-09-02 1985-03-26 Toshiba Corp Bellows
JPS62118163A (en) * 1985-11-18 1987-05-29 Hitachi Constr Mach Co Ltd Twisted bellows
FR2641838B1 (en) * 1989-01-19 1992-06-19 Sealol SEALING DEVICE FOR REALIZING A SEAL BETWEEN TWO BODIES WITH A POSSIBILITY OF RELATIVE ROTATION OF LIMITED AMPLITUDE
JPH04151088A (en) 1990-10-12 1992-05-25 Canon Inc Rotation flexible pipe for vacuum and vacuum piping structure employing said rotation flexible pipe for vacuum
JP3070085B2 (en) 1990-10-19 2000-07-24 石川島播磨重工業株式会社 Light extraction line of SOR optical device
JPH05272674A (en) * 1992-03-30 1993-10-19 Nippon Telegr & Teleph Corp <Ntt> Bellows
DE4310510C2 (en) * 1993-03-31 1995-04-20 Freudenberg Carl Fa Bellows
US5439781A (en) 1993-05-10 1995-08-08 At&T Corp. Device fabrication entailing synchrotron radiation
JPH11294658A (en) * 1998-04-06 1999-10-29 Toyo Tire & Rubber Co Ltd Flexible expansible joint, and its manufacture
DE29823586U1 (en) * 1998-05-29 1999-11-18 Iwk Regler Kompensatoren Flexible pipe element
AU4779700A (en) * 1999-05-27 2000-12-18 Nikon Corporation Exposure system, method of manufacturing device, and method of environmental control of exposure system
KR20020036951A (en) * 1999-05-28 2002-05-17 시마무라 테루오 Exposure method and apparatus
US6727981B2 (en) * 1999-07-19 2004-04-27 Nikon Corporation Illuminating optical apparatus and making method thereof, exposure apparatus and making method thereof, and device manufacturing method
JP4689064B2 (en) * 2000-03-30 2011-05-25 キヤノン株式会社 Exposure apparatus and device manufacturing method
JP3976981B2 (en) * 2000-03-30 2007-09-19 キヤノン株式会社 Exposure apparatus, gas replacement method, and device manufacturing method
US20020159042A1 (en) * 2001-04-25 2002-10-31 Poon Alex Ka Tim Chamber assembly for an exposure apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102003593A (en) * 2010-12-13 2011-04-06 浙江银轮机械股份有限公司 Corrugated tube and helix tube combined displacement compensator

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JP3831692B2 (en) 2006-10-11
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US6937316B2 (en) 2005-08-30
KR20030015853A (en) 2003-02-25

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