!263321 九、發明說明： 【發明所屬之技術領域】 接月係一種熱板’尤指一種可控制晶片底座於打後 口卞处於較適當之溫度環境並提高 σ 構造。 &伐σ 口口貝的熱板 【先前技術】 在晶片封裝過程中，請參考第 係裝設於打線機具之機台上，並以該熱板（；〇板(3〇) 二301)外接真空抽氣設備，藉以當黏著有曰= :2)之導線架"㈡被輸送至該熱板（：：二4 後，利用直处明糾士斗、⑽、隹 U )上疋位 〇2)之^ 導線架（4Q)上黏著有晶片（4 日日座（4 〇 1 )予以吸附固定，另由Λ 於熱板（3〇)下古4為 另由加熱裝置 复曰…）下方加熱’使熱傳導至導線架（4 〇 熱作用，銪山 ） k供適當的加 加r .T線機具對晶片（4〇2)之各接… 驟。上相對應之引腳"〇3)間作打線接合之步 在打線接合的過程巾， 線燒結呈球狀，再輝接在p只 U利用電極將金屬 〇2)上，接著it 於熱板（3〇)之晶片（4 盥曰片Γ 再將打線機具移動至導線架（4 0 w …曰片（402)相對應之引腳（4〇 “Ο)上 此時’該導線架（4 〇 )上盘 '7線接合， 腳（4〇3)僅受埶板（/〇曰片（4〇2)相對應之引 導線架（4㈧…片4溫度供給熱源，故為使該 )上與曰曰片（ 4 0 2 )相對應之 3 1263321 3 )可與打線 對熱板（3 〇 〇2 )接腳而 0 2 )接腳上 品質。 機具上之金屬線能緊密的結合，加熱裝置會 )加熱至2 5 〇。c以上，可是對晶片（4 。，熱板（3 0 )的溫度過高會造成晶片（4 、’屬球產生溢流現象，而影響打線焊接的 【發明内容】!263321 IX. Description of the invention: [Technical field to which the invention pertains] A lunar plate is a type of hot plate, in particular a controllable wafer base that is placed in a relatively suitable temperature environment and has a σ structure. & σ 口 口 口 热 热 热 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 External vacuum pumping equipment, so that when the lead frame with the 曰=:2) is attached to the hot plate (:: 2, after using the straight position, the (10), 隹U) 〇2) ^ The lead frame (4Q) is adhered to the wafer (4th day seat (4 〇1) for adsorption and fixing, and the other is due to the hot plate (3〇), the lower 4 is replaced by a heating device...) The heating below is to conduct heat to the lead frame (4 〇 heat, 铕山) k for proper addition of the r.T line tool to the wafer (4〇2). On the corresponding pin "〇3), the step of bonding the wire is in the process of bonding the wire, the wire is sintered in a spherical shape, and then the fusion is connected to the p-only U using the electrode to the metal 〇 2), and then it is hot Plate (3 〇) wafer (4 Γ Γ 将 move the wire rig to the lead frame (4 0 w ... 曰 ( (402) corresponding pin (4 〇 "Ο) at this time 'the lead frame ( 4 〇) The upper plate '7-wire joint, the foot (4〇3) is only supported by the seesaw (/〇曰(4〇2) corresponding guide frame (4 (eight)... slice 4 temperature supply heat source, so to make this) The upper part corresponds to the cymbal ( 4 0 2 ) 3 1263321 3 ) and can be connected to the hot plate (3 〇〇 2) and 0 2 ). The metal wire on the machine can be tightly combined. The heating device will heat up to 25 〇.c or above, but the temperature of the wafer (4., the hot plate (30) is too high, causing the wafer (4, 'the ball is overflowing, which affects the wire bonding welding [ SUMMARY OF INVENTION
為此，本發明之主要目 調控熱板中晶片底座的溫度 欲達到前揭目的所使用 含有·· 的係提供一種熱板，可適當的 以提高打線接合的品質。 的主要技術手段係令該熱板包 一 I、板本體，係在其熱板本體+設有-凹槽，·以及 -座係對應於熱板本體之凹槽形狀並裝設其 中’且晶片底座中今右_ ^ ,^ 有一抽虱孔，貫穿晶片底座，該晶片 底座之熱傳導係數較熱板本體低； 〃上述…、板係主要利用晶片底座與熱板本體之間的傳導 係數不同之特性，來遠 “者間的溫度差異，以適當的調 控晶片底座之溫度，增Λ 3合 θ加打線接合的品質，又，晶片底座 /、熱板本體間為一組合I i 、 攻置故可拆卸更換該晶片底座來 增加熱板的擴充性。 上述熱板中，該晶月麻成沉a m _座了使用主要包含有聚醚醚_ (polyetheretherketone Pirff、>， ，PEEK)之材質製造而成，使其具 有耐高溫、而if磨及容易加工夕姓# 之特性，來增加晶片底座的散 熱性’達到有效控制熱板中晶片底座的溫度。 本杂明之•人要目的係為提供加強晶片底座與熱板本體 4 1263321 0 )兩側才目 )，其中， 2 0 )之固定 又μ參閱第三圖所示’在熱板本體 對應位置上各有三個孔洞（1 1 2 )、（ 胃f間孔㈤（1 1 3 )為固定晶片底座 孔洞（1 1 3 )，故其固定孔洞（工丄3 )在晶片底座Q 2 0 )中並未導通’而固定孔洞（丄丄3 )的兩侧則為散 熱孔洞（1 1 2 ) ’其散熱孔洞（丄i 2 )由熱板本體（丄 1 〇 )之一側經穿過晶片底座（工2 〇 )之通道（工2 2) 到達熱板本體（1 1 0 )另-側之相對應散熱孔洞（1丄 2 )，來達到增加熱對流的效果，提高打線品質的功效。 由上述說明可知，本發明係利用晶片底座（i 2 〇 ) ^熱板本體（1 i 〇)之凹槽㈠）的組合，來提供 曰曰片底座（1 2 〇 )的替換性，又利用晶片底座（丄2 〇 ) 之熱傳導係數較熱板本體（1 i Q )為低之特丨生，並輔以 在熱板本體（1 1 〇 )中形成一散熱孔洞（；L i 2 )來達 到控制晶片底座（i 2 〇 )溫度’提高打線的品質，此外， 可在熱板本體（丄i 〇 )設一固定孔、洞（丄丄3 )，利用 固定元件（1 1 4 )裝設於該固定孔洞（工工3 )中，將 晶片底座（1 2 〇 )緊固在熱板本體（丄丄〇 )的凹槽（丄 1 1 )中，防止晶片底座（i 2 〇 )的滑脫與鬆動。 【圖式簡單說明】 第一圖：係本發明熱板之一較佳實施例的立體分解示 意圖。 第二圖：係本發明熱板中第—圖所示之_較佳實施例 的具體實施之立體示意圖。 7 1263321For this reason, the main object of the present invention is to regulate the temperature of the wafer base in the hot plate. To use the above-mentioned purpose, a hot plate is provided, which can appropriately improve the quality of the wire bonding. The main technical means is that the hot plate comprises an I and a plate body, and the hot plate body is provided with a groove, and the seat is corresponding to the groove shape of the hot plate body and is mounted therein. In the base, the right _ ^ , ^ has a boring hole, which penetrates the base of the wafer, and the heat transfer coefficient of the base of the wafer is lower than that of the hot plate body; 〃 the above, the plate system mainly utilizes a different conduction coefficient between the base of the wafer and the body of the hot plate. The characteristics are far from the temperature difference between the two, to properly regulate the temperature of the wafer base, to increase the quality of the 3-in θ plus wire bonding, and the wafer base/, the hot plate body is a combination I i , attacking The wafer base can be detachably replaced to increase the expandability of the hot plate. In the above hot plate, the crystal ramie is made of a material mainly comprising polyetheretherketone Pirff, >, PEEK. It is made to have high temperature resistance, and if and easy to process the characteristics of the sequel to increase the heat dissipation of the wafer base' to achieve effective control of the temperature of the wafer base in the hot plate. Enhanced wafer Seat and hot plate body 4 1263321 0) both sides), wherein, 2 0) fixed and μ see the third figure, there are three holes in the corresponding position of the hot plate body (1 1 2), (stomach The f-hole (5) (1 1 3 ) is a fixed wafer base hole (1 1 3 ), so the fixed hole (work 3) is not turned on in the wafer base Q 2 0 ) and the fixed hole (丄丄3) On both sides, there is a heat dissipation hole (1 1 2 ). The heat dissipation hole (丄i 2 ) is reached by one side of the hot plate body (丄1 〇) through the channel of the wafer base (Work 2 〇) (Work 2 2) The corresponding heat dissipation hole (1丄2) on the other side of the hot plate body (1 1 0) is used to increase the effect of heat convection and improve the quality of the wire. As can be seen from the above description, the present invention utilizes a wafer base (i 2 〇) ^The combination of the hot plate body (1 i 〇) groove (1)) provides the replacement of the cymbal base (1 2 〇), and the heat transfer coefficient of the wafer base (丄2 〇) is higher than that of the hot plate body. (1 i Q ) is a low-level special, supplemented by forming a heat dissipation hole (L i 2 ) in the hot plate body (1 1 〇) to control the bottom of the wafer (i 2 〇) Temperature 'Improve the quality of the wire. In addition, a fixing hole and a hole (丄丄3) can be provided in the hot plate body (丄i 〇), and the fixing hole (1 1 4 ) is attached to the fixing hole. (Working 3), the wafer base (1 2 〇) is fastened in the recess (丄1 1 ) of the hot plate body (丄丄〇) to prevent slippage and looseness of the wafer base (i 2 〇). BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a perspective exploded view of a preferred embodiment of the hot plate of the present invention. Fig. 2 is a perspective view showing a concrete embodiment of the preferred embodiment shown in Fig. 1 of the hot plate of the present invention. 7 1263321
第三圖：係本發明熱板中 的正面透視示意圖。 第四圖：係習知熱板具體 附 件：係本發明熱板之 【主要元件符號說明】 (1 〇 )熱板 (1 1 1 )凹槽 (1 1 3 )固定孔 (120)晶片底座 (1 2 2 )散熱孔 (201)晶片座 (2〇3 )腳位（3 0 ) (3 0 1 )抽氣孔 (401)晶片座 (4 0 3 )腳位 第一圖所示之一較佳實施例 實施之立體示意圖。 分布圖。 (110)熱板本體 (1 1 2 )散熱孔 (1 1 4 )固定元件 (1 2 1 )抽氣孔 (2 0 )導線架 (2 0 2 )晶片 板 (4 0 )導線架 (4 0 2 )晶片Fig. 3 is a front perspective view showing the hot plate of the present invention. The fourth figure: the specific accessories of the conventional hot plate: the main component symbol description of the hot plate of the present invention (1 〇) hot plate (1 1 1) groove (1 1 3) fixing hole (120) wafer base ( 1 2 2) heat sink hole (201) wafer holder (2〇3) pin position (3 0) (3 0 1) air suction hole (401) wafer holder (4 0 3) pin position is preferably shown in the first figure A perspective view of an embodiment implementation. Distribution. (110) hot plate body (1 1 2) vent (1 1 4) fixing element (1 2 1 ) vent (20) lead frame (2 0 2) wafer board (40) lead frame (4 0 2 Wafer