TW201349406A - Heat conductive member and semiconductor device provided with same - Google Patents
Heat conductive member and semiconductor device provided with same Download PDFInfo
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- TW201349406A TW201349406A TW102101766A TW102101766A TW201349406A TW 201349406 A TW201349406 A TW 201349406A TW 102101766 A TW102101766 A TW 102101766A TW 102101766 A TW102101766 A TW 102101766A TW 201349406 A TW201349406 A TW 201349406A
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Abstract
Description
本發明係有關熱傳導構件及具備其之半導體裝置，用作元件等發熱體所產生的熱之傳導路徑，特別是有關引線框(lead frame)或散熱體(heat sink)等熱傳導構件及具備其之半導體裝置。 The present invention relates to a heat conduction member and a semiconductor device including the same, and is used as a heat conduction path generated by a heat generating body such as a component, and particularly relates to a heat conduction member such as a lead frame or a heat sink, and the like Semiconductor device.
IGBT(Insulated Gate Bipolar Transistor，絕緣閘雙極電晶體)或FWD(Free Wheeling Diode，飛輪二極體)等半導體元件(以下適當稱之為元件)，由於在動作時會產生熱，故為了將該熱加以散熱，而安裝有散熱體等散熱器。而在元件與散熱體之間，一般會設有固定支撐元件之引線框等構件。 A semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor) or an FWD (Free Wheeling Diode) (hereinafter referred to as an element) is heated during operation, so The heat is dissipated and a heat sink such as a heat sink is mounted. Between the component and the heat sink, a member such as a lead frame for fixing the support component is generally provided.
此處，引線框或散熱體等構件，係為用作元件所產生的熱之傳導路徑的構件(以下適當稱之為熱傳導構件)，故以熱傳導率高的材料來構成。再者，一般來說，熱傳導構件相較於元件係以熱膨脹率高的素材來構成。是故，當元件發熱的情形下，由於元件與各熱傳導構件之間的熱膨脹率差，會在構件之間(元件與熱傳導構件 之間、熱傳導構件彼此之間)產生應力。其結果，由於該應力，而會在元件與熱傳導構件之間的接合層(銲料等)發生龜裂、剝離、視情況甚至可能招致元件損傷等事態。 Here, a member such as a lead frame or a heat sink is a member that serves as a conduction path of heat generated by the element (hereinafter referred to as a heat conduction member as appropriate), and thus is formed of a material having a high thermal conductivity. Further, in general, the heat conduction member is formed of a material having a high coefficient of thermal expansion as compared with the element system. Therefore, in the case where the element is heated, there is a difference in thermal expansion rate between the element and each of the heat conducting members, which may be between the members (the element and the heat conducting member) Stress is generated between the heat conducting members and each other. As a result, due to the stress, the bonding layer (solder or the like) between the element and the heat conducting member may be cracked, peeled, or may cause damage to the element, as the case may be.
為防止上述應力產生而造成元件損傷，係開發出下述之技術。 In order to prevent the above-mentioned stress from being generated and causing damage to the components, the following techniques have been developed.
舉例來說，專利文獻1中揭示一種引線框，其特徵為，在搭載元件的部分亦即晶粒座(Die Pad)部，設置複數個凸部。 For example, Patent Document 1 discloses a lead frame in which a plurality of convex portions are provided in a portion of a die pad, that is, a die pad.
此外，專利文獻2中揭示一種散熱體，其在與元件相向的面設置複數個凸部。 Further, Patent Document 2 discloses a heat radiating body in which a plurality of convex portions are provided on a surface facing the element.
又，還存在另一種方法，亦即為了接合元件、各熱傳導構件而使用接合材，藉由該接合材所形成之接合層，為發揮應力的緩衝材般的功效，係使該接合層形成得較厚。 Further, there is another method in which a bonding material is used for the bonding element and each of the heat conduction members, and the bonding layer formed of the bonding material is formed into a buffer material having a stress, so that the bonding layer is formed. Thicker.
該些技術針對減緩構件間產生之應力，係發揮了一定的效果。 These techniques have played a certain role in mitigating the stress generated between the components.
〔專利文獻1〕日本特開平6-232184號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 6-232184
〔專利文獻2〕日本特開平2-26058號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2-26058
然而，專利文獻1揭示之熱傳導構件(引線 框)，是在與元件相向的面當中容易蓄積熱之中央部，形成細小的複數個凸部，故形成網格狀的凹部之面積會變大。此外，專利文獻2揭示之熱傳導構件(散熱體)，亦是在與元件相向的面之中央部，形成大面積的凹部(參照第1圖)。而當使該些熱傳導構件層積時，係在凹部封入熱傳導率較低之接合材，故熱傳導構件當中與元件相向的面之中央部的熱，會難以傳導至層積之其他構件。亦即，該熱傳導構件整體的熱傳導率會變低。其結果，元件發出的熱會難以傳導至外部，故具備該熱傳導構件之裝置，會在裝置內部蓄積熱，而容易使元件內的最高溫度變高。當元件變得高溫，會對動作產生影響，因此才配置熱傳導構件來提高散熱性以避免達到一定溫度以上，但在散熱性不夠高的情形下，只好將元件使用之電力限制得較低。 However, the heat conduction member disclosed in Patent Document 1 (lead) In the frame, the central portion of the heat is easily accumulated in the surface facing the element, and a small number of convex portions are formed. Therefore, the area of the concave portion forming the mesh shape is increased. Further, in the heat conduction member (heat dissipation body) disclosed in Patent Document 2, a large-area concave portion is formed at a central portion of a surface facing the element (see Fig. 1). On the other hand, when the heat conducting members are laminated, the bonding material having a low thermal conductivity is sealed in the concave portion, so that the heat in the central portion of the surface facing the element among the heat conducting members is hardly conducted to the other members laminated. That is, the thermal conductivity of the entire heat conduction member becomes low. As a result, the heat generated by the element is hard to be conducted to the outside. Therefore, the device including the heat conducting member accumulates heat inside the device, and it is easy to increase the maximum temperature in the device. When the component becomes high temperature, it affects the operation. Therefore, the heat conduction member is disposed to improve heat dissipation to avoid reaching a certain temperature or higher, but in the case where heat dissipation is not high enough, the power used for the component is limited to be low.
是故，專利文獻1及專利文獻2揭示之技術，從熱阻變高這點看來並不理想。 Therefore, the techniques disclosed in Patent Document 1 and Patent Document 2 are not preferable from the viewpoint that the thermal resistance becomes high.
此外，若採取使構件間的接合層形成得較厚之方法，那麼由於構成接合層的銲料等接合材之熱傳導率較低，故可想而知，具備較厚接合層之裝置，會在裝置內部蓄積熱。是知，該構成在從熱阻變高這點看來，同樣不理想。另一方面，如果為了提升散熱性而使該接合層形成得較薄，則又無法減緩前述應力。 Further, when a method of forming a bonding layer between members is made thick, since the bonding material such as solder constituting the bonding layer has a low thermal conductivity, it is conceivable that a device having a thick bonding layer may be in the device. The inside accumulates heat. It is known that this configuration is also undesirable from the viewpoint that the thermal resistance becomes high. On the other hand, if the bonding layer is formed thin in order to improve heat dissipation, the aforementioned stress cannot be alleviated.
由上可知，依照習知技術，無法同時兼顧應力減緩及熱傳導率提升。 It can be seen from the above that according to the prior art, stress relaxation and thermal conductivity increase cannot be simultaneously considered.
鑑此，本發明之課題即在於提供一種熱傳導 構件及具備其之半導體裝置，其能減緩因元件等發熱體發熱而產生之應力，且熱傳導率高。 Accordingly, the subject of the present invention is to provide a heat conduction The member and the semiconductor device including the same can reduce stress generated by heat generation of a heat generating element such as an element, and have high thermal conductivity.
為解決前述問題，本發明之熱傳導構件，屬於設置成層積於發熱體，且傳導來自該發熱體的熱之熱傳導構件，其特徵為：在與前述發熱體相向之一側面當中和前述發熱體面對面的範圍內之基準面、以及在未與前述發熱體相向之另一側面當中位於該基準面的背側之背側基準面，的至少一方之中央部形成有主凸部，且形成於前述基準面上或前述背側基準面上之前述主凸部的先端部之面積，係為該基準面或該背側基準面的面積之20%以上90%以下，形成有前述主凸部的前述基準面或前述背側基準面之所有周緣，係比前述先端部還低，前述先端部最高的部分與該周緣最低的部分之間的高低差，係為該基準面或該背側基準面(詳言之，為形成有前述主凸部之該基準面或該背側基準面)之重心與距離該重心最遠之該周緣之間的距離的1/400以上。 In order to solve the above problems, the heat conduction member of the present invention belongs to a heat conduction member which is disposed in a heat generating body and conducts heat from the heat generating body, and is characterized in that the heat generating body faces the surface of one side facing the heat generating body. a reference surface in the range and a main convex portion formed in at least one of the back side reference surfaces on the back side of the reference surface other than the heat generating body, and formed in the reference The area of the tip end portion of the main convex portion on the surface or the back reference surface is 20% or more and 90% or less of the area of the reference surface or the back reference surface, and the reference of the main convex portion is formed. All the circumferences of the surface or the back reference surface are lower than the front end portion, and the height difference between the highest portion of the front end portion and the lowest portion of the circumference is the reference surface or the back reference surface (detailed In other words, the distance between the center of gravity of the reference surface or the back reference surface on which the main convex portion is formed and the peripheral edge farthest from the center of gravity is 1/400 or more.
按照此熱傳導構件，由於主凸部係具有相對於基準面或背側基準面的面積為20%以上90%以下面積之先端部，而形成於基準面或背側基準面當中最容易蓄積熱之中央部，故能通過該主凸部來適當地傳導熱(發熱體產生之熱)。 According to this heat conduction member, since the main convex portion has a tip end portion having an area of 20% or more and 90% or less with respect to the reference surface or the back reference surface, it is most likely to accumulate heat among the reference surface or the back reference surface. Since the central portion is provided, heat can be appropriately transmitted through the main convex portion (heat generated by the heat generating body).
此外，由於該主凸部的先端部面積為基準面或背側基 準面面積的90%以下，且基準面或背側基準面當中，周緣係比先端部還低，故使熱傳導構件層積時，在應力(拉伸應力或壓縮應力成為最大的該周緣，會將發揮應力緩衝材效果之接合材封入得較厚，故能適當地減緩應力。 In addition, since the front end portion of the main convex portion is a reference surface or a back side base 90% or less of the quasi-surface area, and the circumference of the reference surface or the back reference surface is lower than the tip end portion. Therefore, when the heat conduction member is laminated, the stress (the tensile stress or the compressive stress becomes the largest, the circumference) The joint material which exerts the effect of the stress buffering material is sealed thick, so that the stress can be appropriately moderated.
又，主凸部的先端部最高部分與周緣的最低部分之間的高低差，係做成基準面或背側基準面的重心與距離該重心最遠之該周緣之間的距離的1/400以上，藉此，能夠在未設置主凸部之處(周緣等)將發揮應力緩衝材效果之接合材封入得較厚，故能夠確保適當的應力減緩效果。 Further, the height difference between the highest portion of the tip end portion of the main convex portion and the lowest portion of the peripheral edge is 1/400 of the distance between the center of gravity of the reference surface or the back reference surface and the periphery farthest from the center of gravity. As a result, it is possible to seal the bonding material which exhibits the effect of the stress relieving material at a place where the main convex portion is not provided (peripheral edge or the like), and it is possible to ensure an appropriate stress relieving effect.
再者，由於由於主凸部係具有相對於基準面或背側基準面的面積為20%以上面積之先端部，而形成於基準面或背側基準面之中央部，故熱傳導構件的中央部剛性會提升。其結果，熱傳導構件不容易發生形變，故能夠減緩因熱而產生之應力。 In addition, since the main convex portion has a tip end portion having an area of 20% or more with respect to the reference surface or the back reference surface, and is formed at the center portion of the reference surface or the back reference surface, the central portion of the heat conduction member The rigidity will increase. As a result, the heat conduction member is less likely to be deformed, so that the stress generated by heat can be reduced.
此外，本發明之熱傳導構件，較佳為，在前 述主凸部周圍形成有1個以上的副凸部，在包含形成有前述凸部的前述基準面或前述背側基準面之中心法線而剖斷之剖面形狀當中，各個前述副凸部的寬度係比前述主凸部的寬度還短。 Further, the heat conducting member of the present invention is preferably in front of One or more sub convex portions are formed around the main convex portion, and each of the sub convex portions is formed in a cross-sectional shape that is cut by a center normal line including the reference surface or the back reference surface on which the convex portion is formed. The width is shorter than the width of the aforementioned main convex portion.
按照此熱傳導構件，係在主凸部周圍設置副凸部，且在通過基準面或背側基準面中心而剖斷之剖面形狀當中，該副凸部的寬度比主凸部的寬度還短，故該副凸部對於前述應力減緩不會帶來減損，能夠通過具有一定寬度之該副凸部來適當地傳導熱。此外，若僅具有主凸部則 接合時發熱體(元件)容易傾斜，而其能夠彌補。 According to the heat conduction member, the sub convex portion is provided around the main convex portion, and the width of the sub convex portion is shorter than the width of the main convex portion in the cross-sectional shape cut by the center of the reference surface or the back reference surface. Therefore, the sub-protrusion does not cause any damage to the stress relaxation, and the heat can be appropriately conducted by the sub-protrusion having a certain width. In addition, if there is only the main convex portion The heating element (element) is easily tilted at the time of joining, and it can be compensated.
此外，本發明之熱傳導構件，較佳為，前述凸部的先端部之角部形成為外曲狀。 Further, in the heat conduction member of the present invention, it is preferable that a corner portion of the tip end portion of the convex portion is formed in an outer curved shape.
按照此熱傳導構件，凸部的先端部之角部係形成為外曲狀，故能夠使集中於該角部的應力分散，降低應力峰值。其結果，即使因為來自發熱體的熱而導致熱傳導構件彎曲時，也能避免凸部的先端部之角部成為基點而發生龜裂之狀況。 According to this heat conduction member, since the corner portion of the tip end portion of the convex portion is formed in an outer curved shape, the stress concentrated on the corner portion can be dispersed, and the stress peak can be reduced. As a result, even when the heat conduction member is bent due to heat from the heat generating body, it is possible to prevent the corner portion of the tip end portion of the convex portion from becoming a base point and causing cracking.
此外，本發明之熱傳導構件，較佳為，與前述主凸部鄰接且未形成於前述凸部的接合材之流動路徑，係形成為接續至前述周緣。 Further, in the heat conduction member of the present invention, it is preferable that a flow path of the bonding material adjacent to the main convex portion and not formed in the convex portion is formed to be continuous to the peripheral edge.
按照此熱傳導構件，由於與主凸部鄰接的接合材之流動路徑(未形成凸部之處)係形成為接續至周緣，故當夾著銲料等接合材而以迴銲接合時，助銲劑或氣泡會容易逃逸至外部。此外，即使有少量殘留於內部之氣泡，也會從主要負責熱傳導之凸部容易地逃逸至其他部分，故能夠減低氣泡對熱傳導造成之影響。又，當採行使接合材從周緣的一端朝向另一端灌入之方法時，不會產生孔隙(微小的空洞)，而能適當地進行接合作業(在構件間填滿接合材並接合之作業)。 According to this heat conduction member, since the flow path of the bonding material adjacent to the main convex portion (where the convex portion is not formed) is formed so as to be continued to the periphery, when the bonding material is sandwiched with solder or the like, the flux or the flux is soldered back. Bubbles can easily escape to the outside. Further, even if a small amount of air bubbles remaining inside are easily escaped from the convex portion mainly responsible for heat conduction to other portions, the influence of the air bubbles on the heat conduction can be reduced. In addition, when the method of injecting the joining material from one end of the circumference to the other end is performed, pores (small voids) are not generated, and the joining operation can be appropriately performed (the work of filling the joining materials between the members and joining) .
此外，本發明之熱傳導構件，較佳為，前述副凸部係形成為，從形成有前述凸部的前述基準面或前述背側基準面之中心朝周緣方向呈放射狀排列。 Further, in the heat conduction member according to the present invention, it is preferable that the auxiliary convex portion is formed to be radially arranged from a center of the reference surface or the back reference surface on which the convex portion is formed toward a peripheral edge.
熱傳導構件之熱傳導，除了會從與發熱體相 向之一側面(基準面存在之面)朝向未相向之另一側面(背側基準面存在之面)方向發生，也會從中央部朝周緣方向發生。按照此熱傳導構件，由於副凸部從基準面或背側基準面的中心朝周緣方向呈放射狀排列，故幾乎不會妨礙從前述中央部朝周緣方向發生之熱傳導，而能夠使熱擴散。亦即，能夠適當地傳導熱。 Heat conduction of the heat conducting member, in addition to One side surface (the surface on which the reference surface exists) is formed in the direction opposite to the other side surface (the surface on which the back side reference surface exists), and also occurs from the center portion toward the peripheral direction. According to this heat conduction member, since the sub-protrusions are radially arranged from the center of the reference surface or the back reference surface toward the peripheral direction, heat conduction from the central portion toward the peripheral direction is hardly hindered, and heat can be diffused. That is, heat can be properly conducted.
此外，本發明之熱傳導構件，較佳為，前述副凸部係形成為，從形成有前述凸部的前述基準面或前述背側基準面之中心朝周緣方向呈漩渦狀排列。 Further, in the heat conduction member according to the present invention, it is preferable that the auxiliary convex portion is formed in a spiral shape from a center of the reference surface or the back reference surface on which the convex portion is formed toward a peripheral edge.
熱傳導構件之基準面或背側基準面當中，因發熱體產生的熱，會產生與該面平行且從中央部朝周緣方向呈放射狀且直線狀之剪切應力。按照此熱傳導構件，由於副凸部從基準面或背側基準面的中心朝周緣方向呈漩渦狀並排，亦即副凸部不沿著剪切應力的應力向量方向，故能夠降低剪切應力。 Among the reference surface or the back reference surface of the heat conduction member, due to the heat generated by the heat generating body, a shear stress which is parallel to the surface and which is radially and linear from the central portion toward the peripheral direction is generated. According to this heat conduction member, since the sub convex portion is arranged in a spiral shape from the center of the reference surface or the back reference surface toward the peripheral direction, that is, the sub convex portion does not follow the stress vector direction of the shear stress, the shear stress can be reduced.
本發明之半導體裝置，其特徵為，具有：元件，即發熱體；及前述熱傳導構件，與前述元件的一側面接合。 A semiconductor device according to the present invention is characterized in that: an element, that is, a heat generating body; and the heat conducting member are joined to one side surface of the element.
此外，本發明之半導體裝置，屬於具有：元件，即發熱體；及第1熱傳導構件，與前述元件的一側面接合；及絕緣構件，與前述第1熱傳導構件的未與前述元件接合之面接合；及第2熱傳導構件，與前述絕緣構件的未與前述第1熱傳導構件接合之面接合；及第3熱傳導構件，與前述第2熱傳導構件的未與前述絕緣構件接合之面接合；該 半導體裝置，其特徵為：前述第1熱傳導構件、前述第2熱傳導構件、及前述第3熱傳導構件當中的至少一者，係為前述之熱傳導構件。 Further, the semiconductor device of the present invention includes: an element, that is, a heating element; and a first heat conduction member joined to one side surface of the element; and an insulating member bonded to a surface of the first heat conduction member that is not bonded to the element And the second heat conduction member is joined to a surface of the insulating member that is not joined to the first heat conduction member; and the third heat conduction member is joined to a surface of the second heat conduction member that is not joined to the insulating member; In the semiconductor device, at least one of the first heat conduction member, the second heat conduction member, and the third heat conduction member is the heat conduction member described above.
按照此半導體裝置，其具備之熱傳導構件的至少其中1個的熱傳導率較高，且能夠減緩因發熱體(元件)發熱而產生之應力。 According to this semiconductor device, at least one of the heat conduction members provided has a high thermal conductivity and can reduce stress generated by heat generation of the heating element (element).
按照本發明之熱傳導構件，由於在基準面或背側基準面的規定位置，形成佔有規定以上面積之主凸部，故能夠適當地傳導熱。此外，由於主凸部具有規定以下面積，且具有規定以上高度(主凸部的先端部最高部分與周緣最低部分之間的高低差)，且在應力(拉伸應力或壓縮應力)成為最大的基準面或背側基準面之周緣並未形成凸部，故能夠適當地減緩應力。 According to the heat conduction member of the present invention, since the main convex portion occupying a predetermined area or more is formed at a predetermined position on the reference surface or the back reference surface, heat can be appropriately conducted. Further, since the main convex portion has a predetermined area and has a predetermined height or higher (the height difference between the highest portion of the tip end portion of the main convex portion and the lowest portion of the peripheral portion), and the stress (tensile stress or compressive stress) becomes maximum. Since the convex portion is not formed at the periphery of the reference surface or the back reference surface, the stress can be appropriately moderated.
再者，由於形成佔有規定以上面積之主凸部，故熱傳導構件的中央部剛性會提升，藉此不易發生形變，其結果，能夠減緩因熱而造成之應力。 Further, since the main convex portion occupying a predetermined area or more is formed, the rigidity of the central portion of the heat conduction member is increased, whereby deformation is less likely to occur, and as a result, stress due to heat can be reduced.
是故，本發明之熱傳導構件，能夠減緩因發熱體發熱而產生之應力，且能夠適當地傳導熱。亦即，能夠兼顧應力減緩及熱傳導率之提升。 Therefore, the heat conduction member of the present invention can reduce the stress generated by the heat generation of the heat generating body and can conduct heat appropriately. That is, it is possible to achieve both stress relaxation and improvement in thermal conductivity.
又，按照本發明之熱傳導構件，藉由設置具有規定寬度之副凸部，不會對前述應力減緩造成減損，而能夠通過該副凸部來適當地傳導熱。 Further, according to the heat conduction member of the present invention, by providing the sub-protrusion having a predetermined width, the stress is not impaired, and the sub-protrusion can appropriately conduct heat.
此外，按照本發明之熱傳導構件，由於凸部的先端部之角部形成為外曲狀，故能夠避免凸部的先端部之角部成為基點而發生龜裂之狀況。是故，能夠提升使用熱傳導構件及該熱傳導構件之半導體裝置的耐久性。 Further, according to the heat conduction member of the present invention, since the corner portion of the tip end portion of the convex portion is formed in an outer curved shape, it is possible to prevent the corner portion of the tip end portion of the convex portion from becoming a base point and being cracked. Therefore, the durability of the semiconductor device using the heat conduction member and the heat conduction member can be improved.
又，按照本發明之熱傳導構件，不會產生孔隙(微小的空洞)，而能適當地進行接合作業(在構件間填滿接合材並接合之作業)。是故，能夠提升使用該熱傳導構件之半導體裝置於製造時的良率。 Further, according to the heat conduction member of the present invention, pores (small voids) are not generated, and the joining operation can be appropriately performed (the operation of filling the joining members between the members and joining them). Therefore, the yield of the semiconductor device using the heat conduction member at the time of manufacture can be improved.
又，按照本發明之熱傳導構件，由於副凸部從基準面或背側基準面的中心朝周緣方向呈放射狀排列，故幾乎不會妨礙從中央部朝周緣方向發生之熱傳導，而能夠適當地傳導熱。是故，能夠進一步提升熱的傳導性。 Further, according to the heat conduction member of the present invention, since the sub convex portions are radially arranged from the center of the reference surface or the back reference surface toward the peripheral direction, heat conduction from the central portion toward the peripheral direction is hardly hindered, and the heat conduction can be appropriately performed. Conductive heat. Therefore, the thermal conductivity can be further improved.
再者，按照本發明之熱傳導構件，由於副凸部係從基準面或背側基準面之中心朝周緣方向不呈放射狀而是呈漩渦狀排列，故能夠降低剪切應力。是故，能夠進一步提升使用熱傳導構件及該熱傳導構件之半導體裝置的耐久性。 Further, according to the heat conduction member of the present invention, since the sub-protrusions are arranged in a spiral shape from the center of the reference surface or the back reference surface in the circumferential direction, the shear stress can be reduced. Therefore, the durability of the semiconductor device using the heat conduction member and the heat conduction member can be further improved.
按照本發明之半導體裝置，其具備之熱傳導構件的至少其中1個的熱傳導率較高，且能夠減緩因發熱體(元件)發熱而產生之應力。是故，作為半導體裝置全體，能夠兼顧應力減緩及熱傳導率之提升。 According to the semiconductor device of the present invention, at least one of the heat conduction members provided has a high thermal conductivity and can reduce stress generated by heat generation of the heating element (element). Therefore, as a whole semiconductor device, both stress relaxation and thermal conductivity can be improved.
1‧‧‧熱傳導構件(第1熱傳導構件) 1‧‧‧heat conducting member (first heat conducting member)
2‧‧‧發熱體(元件) 2‧‧‧heating body (component)
3‧‧‧接合層 3‧‧‧ bonding layer
4‧‧‧絕緣構件 4‧‧‧Insulating components
5‧‧‧熱傳導構件(第2熱傳導構件) 5‧‧‧heat conducting member (second heat conducting member)
6‧‧‧熱傳導構件(第3熱傳導構件) 6‧‧‧heat conducting member (third heat conducting member)
7‧‧‧熱傳導構件(第4熱傳導構件) 7‧‧‧heat conducting member (fourth heat conducting member)
11‧‧‧基準面 11‧‧‧Datum
12‧‧‧主凸部 12‧‧‧Main convex
13‧‧‧副凸部 13‧‧‧Sub-protrusion
14‧‧‧背側基準面 14‧‧‧Back side datum
20‧‧‧半導體裝置 20‧‧‧Semiconductor device
L12‧‧‧主凸部的寬度 L 12 ‧‧‧Width of main convex
L13‧‧‧副凸部的寬度 L 13 ‧‧‧Width of the sub-convex
h‧‧‧凸部高度 h‧‧‧Higher height
d‧‧‧從凸部中心至凸部端部之距離 D‧‧‧distance from the center of the convex part to the end of the convex part
〔圖1〕本發明第1實施形態之熱傳導構件構造示意立體圖。 Fig. 1 is a schematic perspective view showing the structure of a heat conduction member according to a first embodiment of the present invention.
〔圖2〕本發明第2實施形態之熱傳導構件構造示意立體圖。 Fig. 2 is a schematic perspective view showing the structure of a heat conduction member according to a second embodiment of the present invention.
〔圖3〕本發明第2實施形態之熱傳導構件構造俯視圖。 Fig. 3 is a plan view showing the structure of a heat conduction member according to a second embodiment of the present invention.
〔圖4〕(a)為本發明第2實施形態之熱傳導構件截面圖，(b)~(d)為熱傳導構件的應用例示意截面擴大圖。 Fig. 4 (a) is a cross-sectional view showing a heat conducting member according to a second embodiment of the present invention, and (b) to (d) are schematic enlarged cross-sectional views showing an application example of the heat conducting member.
〔圖5〕(a)~(f)為設置於本發明第2實施形態之熱傳導構件的基準面或背側基準面的凸部之應用例。 (a) to (f) are application examples of the convex portion provided on the reference surface or the back reference surface of the heat conduction member according to the second embodiment of the present invention.
［圖6〕(a)為本發明第2實施形態之半導體裝置截面圖，(b)、(c)為半導體裝置的應用例示意截面圖。 Fig. 6 (a) is a cross-sectional view showing a semiconductor device according to a second embodiment of the present invention, and (b) and (c) are schematic cross-sectional views showing an application example of the semiconductor device.
〔圖7〕本發明實施例及比較例之熱傳導構件的銲料層Von Mises應力最大值及熱阻的結果示意圖表。 Fig. 7 is a graph showing the results of the maximum value of the Von Mises stress and the thermal resistance of the solder layer of the heat conducting member according to the examples of the present invention and the comparative example.
以下適當參照圖面，詳細說明用以實施本發明之形態。 Hereinafter, the form for carrying out the invention will be described in detail with reference to the drawings.
首先，說明熱傳導構件1。 First, the heat conduction member 1 will be explained.
所謂熱傳導構件1，係指設置成與發熱體2層積，且 將來自該發熱體2的熱加以傳導之構件，亦即作為來自發熱體2的熱之傳導路徑的構件。舉例來說，熱傳導構件1可以是作為電流路徑之金屬板，亦即為透過接合材來支撐固定發熱體2，而與外部配線進行連接之引線框(圖6之第1熱傳導構件1)、或是將發熱體2發出的熱加以散熱之散熱體(圖6之第3熱傳導構件6)。此外，熱傳導構件1可以是在發熱體2與散熱體6之間作為熱的傳導路徑之鋁板或銅板等板材(圖6之第2熱傳導構件5)。此外，熱傳導構件1可以是圖6之絕緣構件4。 The heat conduction member 1 is disposed so as to be laminated with the heating element 2, and A member that conducts heat from the heating element 2, that is, a member that serves as a conduction path of heat from the heating element 2. For example, the heat conduction member 1 may be a metal plate as a current path, that is, a lead frame (the first heat conduction member 1 of FIG. 6) that is connected to the external wiring through the bonding material to support the fixed heating element 2, or It is a heat radiating body that radiates heat generated by the heating element 2 (the third heat conducting member 6 of Fig. 6). Further, the heat conduction member 1 may be a plate material such as an aluminum plate or a copper plate which serves as a heat conduction path between the heat generating body 2 and the heat radiator 6 (the second heat conduction member 5 of FIG. 6). Further, the heat conduction member 1 may be the insulation member 4 of FIG.
另，當熱傳導構件1為引線框的情形下(圖6之第1熱傳導構件1)，在支撐固定發熱體2之晶粒座部周圍，亦可具有透過導線等而連接之引線部。此外，當熱傳導構件6為散熱體的情形下(圖6之第3熱傳導構件6)，不與發熱體2相向的面亦可做成針床狀、蛇腹狀等容易散熱的形狀。 When the heat conduction member 1 is a lead frame (the first heat conduction member 1 in FIG. 6), a lead portion that is connected to a lead wire or the like may be provided around the die seat portion that supports the fixed heat generating body 2. Further, when the heat conduction member 6 is a heat radiator (the third heat conduction member 6 in FIG. 6), the surface that does not face the heat generator 2 may be formed into a shape such as a needle bed shape or a bellows shape.
又，熱傳導構件的材料並未特別限定，例如可使用銅、鋁或它們的合金、鑽石、氮化鋁、氮化矽、氧化鋁等熱傳導率高的材料。 Further, the material of the heat conduction member is not particularly limited, and for example, a material having high thermal conductivity such as copper, aluminum or an alloy thereof, diamond, aluminum nitride, tantalum nitride or aluminum oxide can be used.
如圖1所示，熱傳導構件1，在與發熱體2相向的面內，於面向該發熱體2的範圍內的基準面11之中央部，形成有主凸部12。 As shown in FIG. 1 , in the heat conduction member 1 , a main convex portion 12 is formed in a central portion of the reference surface 11 in a range facing the heating element 2 in a surface facing the heating element 2 .
所謂主凸部12，如圖1所示，係指形成於基準面11的中央部之凸部。 As shown in FIG. 1 , the main convex portion 12 is a convex portion formed at a central portion of the reference surface 11 .
主凸部12的先端部在基準面11上佔有之面積，為基準面11面積的20%以上90%以下。主凸部12的先端部在基準面11上佔有之面積，若未滿基準面11面積的20%，則在熱最容易蓄積的基準面11之中央部，熱傳導率會降低，故熱傳導構件1全體的熱傳導率變得不會充分降低。另一方面，主凸部12的先端部在基準面11上佔有之面積，若超過基準面11面積的90%，則主凸部12會形成至應力變大的基準面11之周緣方向，而使得發揮緩衝材功能的接合材無法在周緣方向形成得較厚，而無法充分減緩應力。 The area occupied by the tip end portion of the main convex portion 12 on the reference surface 11 is 20% or more and 90% or less of the area of the reference surface 11. When the tip end portion of the main convex portion 12 occupies an area on the reference surface 11, and if it is less than 20% of the area of the reference surface 11, the thermal conductivity is lowered in the central portion of the reference surface 11 where heat is most likely to be accumulated, so the heat conduction member 1 is lowered. The overall thermal conductivity does not become sufficiently lowered. On the other hand, the area occupied by the tip end portion of the main convex portion 12 on the reference surface 11 is greater than 90% of the area of the reference surface 11, and the main convex portion 12 is formed in the circumferential direction of the reference surface 11 where the stress is increased. The joint material that functions as a cushioning material cannot be formed thick in the circumferential direction, and the stress cannot be sufficiently relieved.
較佳是，主凸部12的先端部在基準面11上佔有之面積，為基準面11面積的30%以上60%以下。藉由訂為該範圍，能夠更確實地兼顧應力減緩與熱傳導率之提升。 Preferably, the area occupied by the tip end portion of the main convex portion 12 on the reference surface 11 is 30% or more and 60% or less of the area of the reference surface 11. By setting this range, it is possible to more reliably balance the stress mitigation and the increase in thermal conductivity.
另，主凸部12有先端部呈平坦者，亦有先端部不呈平坦者。在先端部不呈平坦的情形下，所謂主凸部12的先端部，是以呈板狀之熱傳導構件1的表面作為基準，從先端部最高的部分至比其還低規定長度的部分，判斷為先端部。又，所謂該規定長度，係為基準面11周緣上某兩點連成之線段當中，最長的線段的1/1000長度。舉例來說，當基準面11為長方形時，規定長度即為對角線長度的1/1000。 In addition, the main convex portion 12 has a flat end portion, and the front end portion is not flat. When the tip end portion is not flat, the tip end portion of the main convex portion 12 is determined based on the surface of the plate-shaped heat conduction member 1 from the highest portion of the tip end portion to a portion having a predetermined length lower than the predetermined portion. For the apex. Further, the predetermined length is a length of 1/1000 of the longest line segment among the line segments formed by the two points on the periphery of the reference surface 11. For example, when the reference surface 11 is a rectangle, the prescribed length is 1/1000 of the diagonal length.
另，所謂基準面11的周緣，係指基準面11的周緣端，亦即基準面11的二點鏈線之部分(參照圖1、2)。 The term "the circumference of the reference surface 11" refers to the peripheral end of the reference surface 11, that is, the portion of the two-point chain line of the reference surface 11 (see Figs. 1 and 2).
此處所謂「形成於中央部」，要視基準面11的形狀而定，但其意圖為，例如當基準面11的俯視形狀(從法線方向觀察時之形狀)呈正方形或長方形時，亦即發熱體2的俯視形狀呈正方形或長方形時，係形成為包含基準面11之重心；詳言之，係具有與基準面11中心(重心)相同位置(略相同位置)之中心，且與該基準面11為相似形(略相似形)，且形成為包含該基準面11的1/10面積之範圍。 Here, the term "formed in the center portion" depends on the shape of the reference surface 11, but it is intended to be such that, for example, when the plan view shape of the reference surface 11 (the shape when viewed from the normal direction) is square or rectangular, That is, when the heat generating body 2 has a square or rectangular shape in plan view, it is formed to include the center of gravity of the reference surface 11; in detail, it has a center at the same position (slightly the same position) as the center (center of gravity) of the reference surface 11, and The reference surface 11 is of a similar shape (slightly similar shape) and is formed to include a range of 1/10 of the area of the reference surface 11.
又，針對「形成於中央部」，若基準面11的俯視形狀呈正方形及長方形以外之情形，則以上述相同基準判斷即可。 In addition, in the case where the planar shape of the reference surface 11 is a square or a rectangle, it is determined by the same criteria as described above.
另，將主凸部12的設置位置訂為基準面11(或背側基準面14)的中央部，其意圖如下所述。 Further, the installation position of the main convex portion 12 is set as the central portion of the reference surface 11 (or the back side reference surface 14), which is intended to be as follows.
如圖1所示，若設想將板狀且內部構造近乎均一之發熱體2接合於熱傳導構件1之情形，那麼在發熱體2動作中，可認為發熱體2全體是近乎均一地發熱。此時，周邊部會因輻射或導熱而熱容易擴散，故溫度下降較快，但依據熱由高者傳導至低者之自然法則結果，發熱體2的面中心，即幾何重心會成為最高溫處。此處，發熱體2的動作極限係由最高溫度之值所決定。也就是說，若要提升動作極限，可將成為最高溫度的部分之溫度降低。本發明之熱傳導構件1，是在成為最高溫度的發熱體2中心所對應之 基準面11(或背側基準面14)之中央部形成主凸部12，藉此，在法線方向(O軸方向)上熱傳導構件1之該中央部會變厚，且形成於該中央部上之接合層3會變薄。又，熱傳導構件1，其熱傳導率係高於接合層3。是故，在熱傳導構件1的基準面11(或背側基準面14)之中央部，不會太過妨害熱傳導，而會將熱朝法線方向傳導。其結果，會提升熱傳導構件1的基準面11(或背側基準面14)之中央部的熱傳導率，亦即提升散熱性，藉此，能夠降低發熱體2的最高溫度，提升運行極限。 As shown in FIG. 1, when it is assumed that the heat generating body 2 having a plate shape and a nearly uniform internal structure is joined to the heat conduction member 1, it is considered that the entire heat generating body 2 generates heat almost uniformly during the operation of the heat generating body 2. At this time, the peripheral portion is easily diffused by heat due to radiation or heat conduction, so the temperature drops rapidly, but according to the natural law that the heat is transmitted from the upper to the lower, the center of the surface of the heating element 2, that is, the geometric center of gravity becomes the highest temperature. At the office. Here, the operating limit of the heating element 2 is determined by the value of the highest temperature. That is to say, if the action limit is to be increased, the temperature of the portion that becomes the highest temperature can be lowered. The heat conduction member 1 of the present invention corresponds to the center of the heat generating body 2 which becomes the highest temperature. The central portion of the reference surface 11 (or the back reference surface 14) is formed with the main convex portion 12, whereby the central portion of the heat conduction member 1 is thickened in the normal direction (O-axis direction), and is formed at the central portion. The bonding layer 3 on the upper layer is thinned. Further, the heat conduction member 1 has a higher thermal conductivity than the bonding layer 3. Therefore, in the central portion of the reference surface 11 (or the back reference surface 14) of the heat conduction member 1, the heat conduction is not impaired, and the heat is conducted in the normal direction. As a result, the thermal conductivity of the central portion of the reference surface 11 (or the back reference surface 14) of the heat conduction member 1 is improved, that is, the heat dissipation property is improved, whereby the maximum temperature of the heating element 2 can be lowered, and the operation limit can be improved.
另，從發熱體2動作時可使成為最高溫度的部分之溫度降低的觀點看來，熱傳導構件1的主凸部12之設置位置，亦可規定為與熱傳導構件1的發熱體2相向之面(或非相向之面)當中成為最高溫度之位置(發熱中心)。 Further, from the viewpoint of lowering the temperature of the portion having the highest temperature when the heating element 2 is operated, the position at which the main convex portion 12 of the heat conduction member 1 is disposed may be defined to face the heating element 2 of the heat conduction member 1. Among the (or non-opposing faces), it becomes the highest temperature position (heating center).
主凸部12與周緣之間的高低差(主凸部12高度)，可以目標之最高溫與最大應力做為參考指標而適當設計，但其特別與發熱體2大小，即基準面11大小有關。發熱體2愈大則中心與周邊的溫度差愈大，最大應力亦會變大，故必須將主凸部12與周緣之間的高低差設成較大。 The height difference between the main convex portion 12 and the peripheral edge (the height of the main convex portion 12) can be appropriately designed as the reference index of the highest temperature and the maximum stress of the target, but it is particularly related to the size of the heating element 2, that is, the size of the reference surface 11. . The larger the heating element 2 is, the larger the temperature difference between the center and the periphery is, and the maximum stress is also increased. Therefore, the height difference between the main convex portion 12 and the peripheral edge must be made large.
故，以呈板狀之熱傳導構件1的表面來作為高度基準時，主凸部12的先端部最高部分與周緣最低部分之間的高低差(參照圖4之h等)，為基準面11的重心與距離該重心最遠的周緣之間的距離的1/400以上。另，1/ 200以上較佳。 Therefore, when the surface of the plate-shaped heat conduction member 1 is used as the height reference, the height difference between the highest portion of the tip end portion of the main convex portion 12 and the lowest portion of the periphery (refer to h or the like in FIG. 4) is the reference surface 11 The distance between the center of gravity and the circumference farthest from the center of gravity is more than 1/400. Another, 1 More than 200 is preferred.
另一方面，主凸部12的先端部最高部分與周緣最低部分之間的高低差(參照圖4之h等)上限並未特別限定，但為防止熱傳導率降低，較佳為基準面11的重心與距離該重心最遠的周緣之間的距離的1/10以下。 On the other hand, the upper limit of the height difference between the highest portion of the tip end portion of the main convex portion 12 and the lowest portion of the periphery (refer to h or the like in FIG. 4) is not particularly limited, but is preferably a reference surface 11 in order to prevent a decrease in thermal conductivity. The center of gravity is less than 1/10 of the distance between the circumference farthest from the center of gravity.
另，此處之高低，意指以熱傳導構件1表面作為基準，相對於該表面向垂直方向外方愈突出則愈高，愈不突出則愈低。 In addition, the height here means that the surface of the heat conduction member 1 is used as a reference, and the higher the outer surface is perpendicular to the surface, the higher the height, and the lower the protrusion, the lower.
熱傳導構件1如圖2所示，較佳為形成有主凸部12、以及在主凸部12周圍形成有1個以上的副凸部13。 As shown in FIG. 2, the heat conduction member 1 is preferably formed with a main convex portion 12 and one or more sub convex portions 13 formed around the main convex portion 12.
所謂副凸部13，係指在主凸部12周圍形成之1個以上的凸部。 The sub-protrusion portion 13 refers to one or more convex portions formed around the main convex portion 12 .
副凸部13較佳為不形成於基準面11之周緣部。藉由此種構成，在層積熱傳導構件1時，在應力成為最大的該周緣部，會封入發揮應力緩衝材效果之接合材，故能夠適當地減緩應力。 The sub-protrusion portion 13 is preferably not formed on the peripheral edge portion of the reference surface 11. According to this configuration, when the heat conducting member 1 is laminated, the bonding material which exhibits the effect of the stress relieving material is sealed in the peripheral portion where the stress is maximized, so that the stress can be appropriately reduced.
此處所謂基準面11的周緣部，係指具有與基準面11的中心(重心)相同位置之中心，且與該基準面11呈相似形，且被具有該基準面11的9/10面積範圍之周緣(周緣端)、以及基準面11的周緣(周緣端)所包圍之範圍。 Here, the peripheral portion of the reference surface 11 is a center having the same position as the center (center of gravity) of the reference surface 11 and is similar to the reference surface 11 and has a 9/10 area range of the reference surface 11 The circumference (circumferential end) and the range surrounded by the periphery (circumferential end) of the reference surface 11.
另，在設置副凸部13的情形下，主凸部12與副凸部13的先端部在基準面11上佔有的合計面積，較佳為基準面11面積的20%以上90%以下，30%以上尤佳。藉由訂為該範圍，能夠進一步確實地兼顧應力減緩與熱傳導率之提升。 Further, in the case where the sub-convex portion 13 is provided, the total area occupied by the tip end portions of the main convex portion 12 and the sub-convex portion 13 on the reference surface 11 is preferably 20% or more and 90% or less of the area of the reference surface 11; More than % is better. By setting this range, it is possible to further surely balance the stress mitigation and the increase in thermal conductivity.
如圖4(a)所示，在包含形成有凸部12、13的基準面11中心之法線(O軸)而剖斷之剖面形狀當中，各個副凸部13的寬度(L13)係形成為比主凸部12的寬度(L12)還短。又，如圖3所示，在包含基準面11中心之法線而從任意方向剖斷之剖面形狀當中，各個副凸部13的寬度(L13)皆形成為比主凸部12的寬度(L12)還短。另，在包含基準面11中心之法線而剖斷之剖面形狀當中，即使有不存在副凸部13之部分，亦不構成問題。 As shown in FIG. 4(a), the width (L 13 ) of each of the sub-protrusions 13 is a cross-sectional shape which is cut by a normal line (O-axis) including the center of the reference surface 11 on which the convex portions 12 and 13 are formed. It is formed to be shorter than the width (L 12 ) of the main convex portion 12. Further, as shown in FIG. 3, the width (L 13 ) of each of the sub convex portions 13 is formed to be larger than the width of the main convex portion 12 in the cross-sectional shape including the normal line at the center of the reference plane 11 and cut from an arbitrary direction ( L 12 ) is still short. Further, among the cross-sectional shapes cut by the normal line including the center of the reference plane 11, even if there is no portion of the sub-convex portion 13, there is no problem.
將主凸部12與副凸部13之間的關係如前述般加以規定之理由，是因為應力從基準面11中心朝周緣方向會變大，故於該方向如果使副凸部13的寬度形成得比主凸部12的寬度(L12)還長，那麼發揮應力緩衝材效果之接合層3便會形成得較薄，而無法減緩應力。 The reason why the relationship between the main convex portion 12 and the sub-convex portion 13 is defined as described above is because the stress increases from the center of the reference surface 11 toward the circumferential direction, so that the width of the sub-protrusion portion 13 is formed in this direction. If it is longer than the width (L 12 ) of the main convex portion 12, the bonding layer 3 which exerts the effect of the stress relieving material is formed thin, and the stress cannot be alleviated.
另，在包含基準面11中心之法線而剖斷之剖面形狀當中，即使副凸部13有形成複數個之情形，但只要這些各個副凸部13的寬度(L13)比主凸部12的寬度(L12)還短，那麼藉由在未形成副凸部13之部分形成較厚的接 合層3，便能減緩應力而不構成問題。 Further, among the cross-sectional shapes which are cut by the normal line including the center of the reference plane 11, even if the plurality of sub-protrusions 13 are formed, the width (L 13 ) of each of the sub-convex portions 13 is larger than that of the main convex portion 12 The width (L 12 ) is also short, and by forming a thick bonding layer 3 at a portion where the sub-protrusions 13 are not formed, the stress can be alleviated without posing a problem.
另，所謂中心亦可指略中心，例如當基準面11(或背側基準面14)呈正方形或長方形時，為面的幾何重心(略重心)。 In addition, the center may also refer to a center, for example, when the reference surface 11 (or the back reference surface 14) is square or rectangular, it is the geometric center of gravity (slightly center of gravity) of the surface.
以上已利用圖1、圖2、圖3及圖4(a)來說明熱傳導構件1，但針對熱傳導構件1的「主凸部與副凸部之俯視形狀等」、「主凸部與副凸部之截面形狀」，係在以下所示應用例之構成中說明。 Although the heat conduction member 1 has been described above with reference to FIGS. 1 , 2 , 3 , and 4 ( a ), the heat transfer member 1 has a "planar shape of the main convex portion and the sub convex portion," and "main convex portion and sub convex portion". The cross-sectional shape of the portion is described in the configuration of the application example shown below.
主凸部12之俯視形狀，如圖3及圖5所示，係為基準面11的略相似形，且角部呈外曲狀。角部亦可形成為直角，但角部形成為外曲狀，藉此能夠使集中於該角部的應力分散，降低應力峰值。又，為了盡可能降低應力峰值，該角部的曲率半徑以較大者為佳。 As shown in FIG. 3 and FIG. 5, the planar shape of the main convex portion 12 is a slightly similar shape of the reference surface 11, and the corner portion has an outer curved shape. The corner portion may be formed at a right angle, but the corner portion is formed in an outer curved shape, whereby stress concentrated on the corner portion can be dispersed, and stress peaks can be reduced. Further, in order to reduce the stress peak as much as possible, the radius of curvature of the corner portion is preferably larger.
副凸部13之俯視形狀，可如圖5(a)所示為圓形，亦可如圖5(b)所示為角部呈外曲狀之長方形。副凸部13之俯視各形狀為圓形等時，由於不存在轉角，故應力難以集中，而能降低應力峰值。 The planar shape of the sub-convex portion 13 may be a circular shape as shown in FIG. 5(a), or may be a rectangular shape in which the corner portion is curved as shown in FIG. 5(b). When the shape of each of the sub-protrusions 13 in the plan view is circular or the like, since there is no corner, stress is hard to concentrate, and the stress peak can be reduced.
又，副凸部13之俯視形狀亦可如圖5(c)所示，為包圍主凸部12般之環型物。但，如圖5(d)所示，副凸部13較佳是形成為，使得與主凸部12鄰接且未 形成有凸部12、13的接合材之流動路徑，接續至基準面11的周緣。與主凸部12鄰接的接合材之流動路徑(未形成有凸部之處)形成為接續至周緣，藉此，相較於圖5(c)之形狀，圖5(d)之形狀在使接合材迴流時，容易使助銲劑或孔隙向外排出。此外，使接合材從周緣的一端朝向另一端灌入時，不會產生孔隙(微小的空洞)，而能適當地進行接合作業(在構件間填滿接合材並接合之作業)。 Further, as shown in FIG. 5(c), the sub-convex portion 13 may have a ring-like shape surrounding the main convex portion 12. However, as shown in FIG. 5(d), the sub convex portion 13 is preferably formed so as to be adjacent to the main convex portion 12 and not The flow path of the bonding material in which the convex portions 12 and 13 are formed is continued to the periphery of the reference surface 11. The flow path of the bonding material adjacent to the main convex portion 12 (where the convex portion is not formed) is formed to be continued to the periphery, whereby the shape of FIG. 5(d) is made in comparison with the shape of FIG. 5(c) When the bonding material is reflowed, it is easy to discharge the flux or the pores outward. Further, when the joining material is poured from one end of the peripheral edge to the other end, voids (small voids) are not generated, and the joining work can be performed appropriately (the work of filling the joining members between the members and joining them).
副凸部13可如圖5(a)所示形成為與基準面11的周緣並列而整齊排列，但較佳為如圖5(e)所示，形成為從基準面11的中心朝周緣方向呈放射狀且直線狀排列。這是因為，副凸部13從基準面11的中心朝周緣方向呈放射狀且直線狀排列，如此幾乎不會妨礙從中央部朝周緣方向發生之熱傳導，而能夠使熱擴散。 The sub-protrusion portion 13 may be formed in parallel with the peripheral edge of the reference surface 11 as shown in FIG. 5(a), but is preferably formed from the center of the reference surface 11 toward the periphery as shown in FIG. 5(e). Radial and linear. This is because the sub-protrusions 13 are radially and linearly arranged from the center of the reference surface 11 toward the peripheral edge, so that heat conduction from the central portion toward the peripheral direction is hardly hindered, and heat can be diffused.
另，所謂中心亦可指略中心，例如當基準面11呈正方形或長方形時，為重心(略重心)。 In addition, the center may also refer to a center, for example, when the reference surface 11 is square or rectangular, it is a center of gravity (slightly center of gravity).
又，副凸部13較佳為如圖5(f)所示，形成為從基準面11的中心朝周緣方向呈漩渦狀排列。副凸部13從基準面11的中心朝周緣方向呈漩渦狀排列，藉此，副凸部13便不會沿著剪切應力的應力向量方向，故能夠降低剪切應力。 Further, as shown in FIG. 5(f), the sub-convex portions 13 are preferably arranged in a spiral shape from the center of the reference surface 11 toward the peripheral edge. The sub-protrusion portions 13 are arranged in a spiral shape from the center of the reference surface 11 toward the peripheral edge direction, whereby the sub-protrusion portion 13 does not follow the stress vector direction of the shear stress, so that the shear stress can be reduced.
另，副凸部13亦可將圖5(a)~(f)適當組合或變形來形成。舉例來說，亦可將副凸部13形成於如圖5(f)所示之位置，且將各副凸部13之俯視形狀做 成圓或橢圓。此外，例如亦可將圖5(e)中各副凸部13的俯視略長方形之角部，做成外曲狀。 Further, the sub-protrusion portion 13 may be formed by appropriately combining or deforming FIGS. 5(a) to (f). For example, the sub-protrusions 13 may be formed at positions as shown in FIG. 5(f), and the top view shapes of the sub-protrusions 13 may be made. Round or elliptical. Further, for example, the corner portions of the sub-convex portions 13 in FIG. 5(e) which are slightly rectangular in plan view may be formed in an outer curved shape.
又，考量應力是從基準面11的中央部朝周緣方向而變大，可將基準面11的中央部附近形成之副凸部13做成俯視面積較大，而隨著接近周緣方向，形成為俯視面積較小之副凸部13。 Further, the consideration stress is increased from the central portion of the reference surface 11 toward the peripheral direction, and the sub-protrusion portion 13 formed in the vicinity of the central portion of the reference surface 11 can be made larger in plan view, and formed in the vicinity of the peripheral direction. The sub-protrusion 13 having a small area is overlooked.
有關凸部12、13之截面形狀，可為如圖4(a)所示之長方形，但較佳為如圖4(b)、(c)所示，凸部12、13的突出端(先端部)之角部形成為外曲狀。藉由像這樣形成凸部12、13，能夠使集中於角部之應力分散，而降低應力峰值。其結果，即使因為來自發熱體2的熱而導致熱傳導構件彎曲時，也能避免突出端之角部成為基點而發生龜裂之狀況。又，為了盡可能降低應力峰值，該角部的曲率半徑(訂其為r)以較大者為佳。 The cross-sectional shape of the convex portions 12, 13 may be a rectangular shape as shown in Fig. 4 (a), but preferably as shown in Figs. 4 (b) and (c), the protruding ends of the convex portions 12, 13 (apex end) The corner portion of the portion is formed into an outer curved shape. By forming the convex portions 12 and 13 in this manner, the stress concentrated on the corner portions can be dispersed, and the stress peak can be reduced. As a result, even when the heat conduction member is bent due to heat from the heat generating body 2, it is possible to prevent the corner portion of the protruding end from becoming a base point and causing cracking. Further, in order to reduce the stress peak as much as possible, the radius of curvature of the corner portion (which is set to r) is preferably larger.
另，曲率半徑r於凸部12、13的角部全體未必要為相同值。但，有關曲率半徑r的最小值，設凸部12、13高度為h、從凸部12、13中心至凸部12、13端部之距離為d，且定義R=(d2+h2)/2h(凸部12、13全體成為一個圓周的一部分時之曲率半徑)時，較佳為滿足h≦r≦R，更佳為2h≦r≦R/2。 Further, the entire radius of the curvature radius r of the convex portions 12 and 13 is not necessarily the same value. However, regarding the minimum value of the radius of curvature r, it is assumed that the heights of the convex portions 12, 13 are h, the distance from the center of the convex portions 12, 13 to the ends of the convex portions 12, 13 is d, and R = (d 2 + h 2 is defined ) When /h (the radius of curvature when the entire convex portions 12, 13 become a part of a circumference), it is preferable to satisfy h≦r≦R, more preferably 2h≦r≦R/2.
如果曲率半徑的最小值未滿h，則實質上角部會趨近於「直角」，幾乎不具有做成外曲狀之效果。另一方面， 如果曲率半徑的最小值超過R，則在凸部12、13的突出端，相對於發熱體2呈平行之面的面積會變小，不僅會使熱傳導率降低，當接合時予以加壓的情形下，應力會集中在凸部12、13的突出端，發熱體2恐會以該處為起點而裂開。 If the minimum value of the radius of curvature is less than h, the corner portion will substantially approach the "right angle" and hardly have the effect of making an outer curve. on the other hand, When the minimum value of the radius of curvature exceeds R, the area of the protruding ends of the convex portions 12 and 13 which are parallel with respect to the heat generating body 2 becomes small, which not only lowers the thermal conductivity but also pressurizes when joined. Next, the stress is concentrated on the protruding ends of the convex portions 12, 13, and the heating element 2 may be split at this point as a starting point.
此外，如圖4(d)所示，凸部12、13的隅部(與熱傳導構件1表面連接之部分)較佳為呈內曲狀。藉由像這樣形成凸部12、13，在使接合材迴流時，接合材容易流動至隅部，故孔隙不易滯留，能夠形成良好的接合面。此外，使接合材從基準面11的周緣之一端朝向另一端灌入時，能夠使接合材沿著凸部12、13表面適當地灌入。其結果，不會產生孔隙而能適當地進行接合作業。 Further, as shown in FIG. 4(d), the crotch portion of the convex portions 12, 13 (the portion connected to the surface of the heat conduction member 1) is preferably in an inner curved shape. By forming the convex portions 12 and 13 in this manner, when the bonding material is reflowed, the bonding material easily flows to the crotch portion, so that the pores are less likely to be retained, and a good bonding surface can be formed. Further, when the joining material is poured from one end of the reference surface 11 toward the other end, the joining material can be appropriately poured along the surfaces of the convex portions 12 and 13. As a result, the bonding operation can be appropriately performed without generating voids.
另，如同前述主凸部12高度(主凸部12與周緣之間的高低差)般，副凸部13之高度，以呈板狀之熱傳導構件1的表面來作為高度基準時，副凸部13的先端部最高部分與周緣最低部分之間的高低差(參照圖4之h)，可為基準面11的重心與距離該重心最遠的周緣之間的距離的1/400以上。較佳為1/200以上，且較佳為1/10以下。 Further, like the height of the main convex portion 12 (the height difference between the main convex portion 12 and the peripheral edge), when the height of the sub convex portion 13 is the height reference on the surface of the plate-shaped heat conduction member 1, the sub convex portion The height difference between the highest portion of the leading end portion of the 13 and the lowest portion of the periphery (refer to h of FIG. 4) may be 1/400 or more of the distance between the center of gravity of the reference surface 11 and the periphery farthest from the center of gravity. It is preferably 1/200 or more, and preferably 1/10 or less.
以上已說明熱傳導構件1的主凸部12或主凸部12及副凸部13，係形成於與發熱體2相向之面(基準面11存在之面)的情形；但亦可形成於未與發熱體2相向之面(背側基準面14存在之面)。主凸部12或主凸部12及副凸部13，即使形成於未與發熱體2相向之面，仍 能發揮與形成於與發熱體2相向之面時同樣的效果。另，所謂背側基準面14，係指未與發熱體2相向之面當中，位於基準面11背側之範圍(參照圖4(a))。 As described above, the main convex portion 12, the main convex portion 12, and the sub-convex portion 13 of the heat conduction member 1 are formed on the surface facing the heating element 2 (the surface on which the reference surface 11 exists); however, it may be formed in the absence of The surface on which the heating element 2 faces (the surface on which the back reference surface 14 exists). The main convex portion 12 or the main convex portion 12 and the sub convex portion 13 are formed even on a surface that does not face the heating element 2 The same effect as when formed on the surface facing the heating element 2 can be exhibited. The back reference surface 14 is a range that is located on the back side of the reference surface 11 among the surfaces that are not opposed to the heating element 2 (see FIG. 4( a )).
此外，熱傳導構件1中，亦可在與發熱體2相向之面、以及未與發熱體2相向之面這兩面皆形成凸部12、13。 Further, in the heat conduction member 1, the convex portions 12 and 13 may be formed on both surfaces facing the heating element 2 and on the surfaces not facing the heating element 2.
此外，上文已說明對於熱傳導構件1之面搭載一個發熱體2之情形，但亦可使複數個發熱體2對於該面並排搭載。 Further, although the case where one heat generating body 2 is mounted on the surface of the heat conduction member 1 has been described above, a plurality of heat generating elements 2 may be mounted side by side on the surface.
在此情形下，並非在與熱傳導構件1的發熱體2相向之面的中央部形成主凸部12，而是在各發熱體2所對應之各基準面11(或各背側基準面14)的中央部分別形成主凸部12。藉由像這樣形成主凸部12，能夠分別降低各發熱體2的溫度。 In this case, the main convex portion 12 is not formed at the central portion facing the heat generating body 2 of the heat conduction member 1, but is formed on each of the reference surfaces 11 (or the respective back reference surfaces 14) corresponding to the respective heat generating bodies 2. The central portion forms a main convex portion 12, respectively. By forming the main convex portion 12 as described above, the temperature of each of the heat generating bodies 2 can be lowered.
此外，亦可將發熱體2搭載成與熱傳導構件1的一側面相向，且將發熱體2搭載成亦與另一側面相向，也就是在熱傳導構件1的兩面搭載發熱體2。此情形下，可在與各發熱體2相向之各基準面11(兩面)分別形成凸部12、13。 Further, the heating element 2 may be mounted so as to face one side surface of the heat conduction member 1, and the heating element 2 may be mounted so as to face the other side surface, that is, the heating element 2 is mounted on both surfaces of the heat conduction member 1. In this case, the convex portions 12 and 13 can be formed on the respective reference faces 11 (both surfaces) facing the respective heating elements 2.
所謂發熱體2，係指發出熱之構件，例如IGBT(Insulated Gate Bipolar Transistor)、FWD(Free Wheeling Diode)、整流二極體、電晶體等半導體元件 (元件)，通常為在動作時會使熱產生之電子零件。 The heating element 2 refers to a component that emits heat, such as an IGBT (Insulated Gate Bipolar Transistor), a FWD (Free Wheeling Diode), a rectifier diode, a transistor, or the like. (component), usually an electronic component that generates heat during operation.
發熱體2的大小或形狀並未特別限定，但一般而言為俯視形狀呈略長方形板狀者。 The size or shape of the heating element 2 is not particularly limited, but is generally a shape having a substantially rectangular shape in plan view.
所謂接合材，係指將發熱體2、熱傳導構件1等彼此接合之構件。接合材係封入於構件間(發熱體2與熱傳導構件1之間、熱傳導構件1彼此之間、熱傳導構件1與絕緣構件4等其他構件之間)，而形成接合層3。另，接合材例如為銲料、樹脂、合金等，其軟化溫度相對較低且柔軟，故對應力發揮緩衝材效果。 The bonding material refers to a member that joins the heating element 2, the heat conducting member 1, and the like to each other. The bonding material is sealed between the members (between the heating elements 2 and the heat conducting members 1 and between the heat conducting members 1 and between the other members such as the heat conducting members 1 and the insulating members 4) to form the bonding layer 3. Further, the bonding material is, for example, solder, a resin, an alloy or the like, and the softening temperature is relatively low and soft, so that the stress is exerted on the cushioning material.
形成於構件間之接合層厚度，視發熱體2大小、發熱量等而有所不同，並未特別限定，但存在凸部12、13之處的接合層厚度較佳為1μm~10μm，不存在凸部12、13之處的接合層厚度較佳為50μm~200μm。 The thickness of the bonding layer formed between the members varies depending on the size of the heating element 2, the amount of heat generation, and the like, and is not particularly limited. However, the thickness of the bonding layer where the convex portions 12 and 13 are present is preferably 1 μm to 10 μm, and does not exist. The thickness of the bonding layer at the convex portions 12 and 13 is preferably 50 μm to 200 μm.
所謂半導體裝置20，係指具備半導體元件(發熱體2)之裝置，為具有一組功能(例如電力控制功能)之模組。 The semiconductor device 20 is a device including a semiconductor element (heat generating body 2) and is a module having a set of functions (for example, a power control function).
半導體裝置20如圖1、圖2、圖4(a)所示，為一裝置，具有：發熱體2、及熱傳導構件1，與發熱體2的一側面接合。 As shown in FIG. 1, FIG. 2, and FIG. 4(a), the semiconductor device 20 includes a heat generating body 2 and a heat conducting member 1 joined to one side surface of the heat generating body 2.
此外，半導體裝置20如圖6所示，為一裝置，具 有：發熱體2；及第1熱傳導構件1，與發熱體2的一側面接合；及絕緣構件4，與第1熱傳導構件1的未與發熱體2接合之面接合；及第2熱傳導構件5，與絕緣構件4的未與第1熱傳導構件1接合之面接合；及第3熱傳導構件6，與第2熱傳導構件5的未與絕緣構件4接合之面接合。又，第1熱傳導構件1、第2熱傳導構件5、及第3熱傳導構件6當中的至少一者，係為前述之熱傳導構件。 In addition, the semiconductor device 20 is a device as shown in FIG. The heating element 2; the first heat conduction member 1 is joined to one side surface of the heating element 2; and the insulating member 4 is joined to the surface of the first heat conduction member 1 that is not joined to the heating element 2; and the second heat conduction member 5 The surface of the insulating member 4 that is not joined to the first heat conducting member 1 is joined; and the third heat conducting member 6 is joined to the surface of the second heat conducting member 5 that is not joined to the insulating member 4. Further, at least one of the first heat conduction member 1, the second heat conduction member 5, and the third heat conduction member 6 is the above-described heat conduction member.
另，如圖6(a)所示，半導體裝置20中，可在第1熱傳導構件1上側之面(與發熱體2相向之面)、以及第2熱傳導構件5下側之面(未與發熱體2相向之面)形成凸部12、13。此外，半導體裝置20中，如圖6(b)所示，亦可在第1熱傳導構件1上側之面、以及第3熱傳導構件6上側之面形成凸部12、13。又，如圖6(c)所示，半導體裝置20中，亦可更設置第4熱傳導構件7，其層積於發熱體2的上側，且在下側之面形成凸部12、13。 Further, as shown in FIG. 6(a), in the semiconductor device 20, the upper surface of the first heat conduction member 1 (the surface facing the heating element 2) and the lower surface of the second heat conduction member 5 (not heated) The body 2 faces the surface to form the convex portions 12, 13. Further, in the semiconductor device 20, as shown in FIG. 6(b), the convex portions 12 and 13 may be formed on the upper surface of the first heat conduction member 1 and the upper surface of the third heat conduction member 6. Further, as shown in FIG. 6(c), in the semiconductor device 20, the fourth heat conduction member 7 may be further provided, which is laminated on the upper side of the heating element 2, and the convex portions 12 and 13 are formed on the lower surface.
像這樣，半導體裝置20中，與元件2層積而設置之一個以上的熱傳導構件當中至少一個為前述之熱傳導構件，藉此，作為半導體裝置20全體，能夠兼顧應力減緩、以及熱傳導率之提升。 In the semiconductor device 20, at least one of the one or more heat conduction members provided in the form of the element 2 is the above-described heat conduction member, whereby the stress reduction and the improvement of the thermal conductivity can be achieved as a whole of the semiconductor device 20.
另，圖6中，係省略了第1熱傳導構件1及第2熱傳導構件5與絕緣構件4之間的接合層3。 In FIG. 6, the bonding layer 3 between the first heat conduction member 1 and the second heat conduction member 5 and the insulating member 4 is omitted.
利用圖6(a)之半導體裝置20，說明半導體裝置20動作時之熱傳導與應力。 The heat conduction and stress during the operation of the semiconductor device 20 will be described using the semiconductor device 20 of Fig. 6(a).
當發熱體亦即元件2開始動作，元件2全體會近乎均一地發熱。該熱會透過接合層3而傳達至第1熱傳導構件1、絕緣構件4、第2熱傳導構件5、第3熱傳導構件6。又，熱從上方傳導至下方的同時，熱亦從中央部朝周緣方向擴散傳導，藉此，在面方向形成中央部呈高溫、在法線方向形成元件2側呈高溫之溫度分布。 When the heating element, that is, the element 2 starts to operate, the entire element 2 will heat up almost uniformly. This heat is transmitted to the first heat conduction member 1 , the insulating member 4 , the second heat conduction member 5 , and the third heat conduction member 6 through the bonding layer 3 . Further, the heat is conducted from the upper side to the lower side, and the heat is also diffused and conducted from the central portion toward the peripheral direction. Thereby, the temperature at the center portion is high in the surface direction and the temperature at the element 2 side in the normal direction is high.
如果構件的接合部能夠自由移動，那麼藉由此溫度分布，第1熱傳導構件1、第2熱傳導構件5、第3熱傳導構件6的靠近元件2側之面較高溫故會膨脹得較大，在周緣會有應力作用於向下方翹曲之方向；但實際上各構件係被接合，故會受到熱膨脹係數差的影響。亦即，元件2的熱膨脹係數係比第1熱傳導構件1等還小，當因發熱而溫度從室溫開始上昇，則第1熱傳導構件1等會比元件2膨脹得更大，第1熱傳導構件1的周緣會從元件2的周緣朝外側遠離之方向變位，故在接合層3會產生與接合面平行且從中央部朝周緣方向呈放射狀且直線狀之拉伸剪切應力。此時同時地，比起中央，周緣會朝向上翹曲之方向變位。 When the joint portion of the member is freely movable, the surface of the first heat conduction member 1, the second heat conduction member 5, and the third heat conduction member 6 on the side closer to the element 2 is heated to a higher temperature by the temperature distribution. The peripheral edge has a stress acting on the downward warping direction; however, in reality, the members are joined, so that they are affected by the difference in thermal expansion coefficient. In other words, the coefficient of thermal expansion of the element 2 is smaller than that of the first heat conduction member 1 or the like, and when the temperature rises from room temperature due to heat generation, the first heat conduction member 1 or the like expands more than the element 2, and the first heat conduction member Since the peripheral edge of 1 is displaced from the periphery of the element 2 toward the outside, a tensile shear stress which is parallel to the joint surface and which is radially and linear from the center portion toward the peripheral direction is generated in the joint layer 3. At the same time, the circumference is displaced in the direction of the upward warping compared to the center.
另一方面，當元件2的動作停止，則半導體裝置20全體的溫度會下降，故變位會恢復原本的狀態。此時，仍會因熱膨脹係數差，使得第1熱傳導構件1等比元件2還收縮，故會產生與接合層3之接合面平行且從中 央部朝周緣方向呈放射狀且直線狀，且與前述昇溫時呈相反方向之剪切應力。 On the other hand, when the operation of the element 2 is stopped, the temperature of the entire semiconductor device 20 is lowered, so that the displacement is restored to the original state. At this time, the first heat conduction member 1 or the like is still contracted by the element 2 due to the difference in thermal expansion coefficient, so that the joint surface with the bonding layer 3 is generated in parallel and The central portion is radially and linear in the circumferential direction, and has a shear stress in the opposite direction as the temperature rise.
按照本發明之熱傳導構件1及半導體裝置20，由於佔有規定以上面積之主凸部12，係形成於基準面11(或背側基準面14)當中最容易蓄積熱的中央部，故能夠通過該主凸部而適當地將熱傳導至下方的構件，而能降低元件2中央的溫度。亦即，如果將元件2的發熱量做成與過去相同，便能降低其最高溫。另一方面，通常，元件2的運行電力並非受溫度分布而是受最高溫所限制，故若使元件2動作而讓最高溫成為與過去相同，則亦可提高運行電力。但，此時相較於熱阻變低之中央部，周緣部的熱阻會較高，故遠離凸部的部分之溫度會略為上昇。是故，周緣部的剪切應力，相較於無凸部且接合層3厚度與前述有凸部時之周緣部相同的情形下，有可能會稍微上昇。 According to the heat conduction member 1 and the semiconductor device 20 of the present invention, since the main convex portion 12 having a predetermined area or more is formed in the central portion where the heat is most easily accumulated in the reference surface 11 (or the back reference surface 14), the heat transfer member 1 and the semiconductor device 20 can be used. The main convex portion appropriately conducts heat to the lower member, and the temperature at the center of the element 2 can be lowered. That is, if the amount of heat generated by the element 2 is made the same as in the past, the maximum temperature can be lowered. On the other hand, in general, the operating power of the element 2 is not limited by the temperature distribution but by the highest temperature. Therefore, if the element 2 is operated and the highest temperature is the same as in the past, the operating power can be increased. However, at this time, the thermal resistance of the peripheral portion is higher than that of the central portion where the thermal resistance is lower, so the temperature of the portion away from the convex portion slightly rises. Therefore, the shear stress at the peripheral portion may be slightly increased as compared with the case where the convex portion is not formed and the thickness of the bonding layer 3 is the same as the peripheral portion when the convex portion is formed.
此外，由於主凸部12為規定以下之面積，且在基準面11(或背側基準面14)當中，於周緣並未形成副凸部13，故在接合層3會受到最大應力之該周緣，使發揮應力緩衝材效果之接合層3形成得較厚，而能夠適當地減緩應力。 Further, since the main convex portion 12 has a predetermined area and the sub-protrusion portion 13 is not formed at the peripheral edge among the reference surface 11 (or the back side reference surface 14), the peripheral layer of the bonding layer 3 is subjected to the maximum stress. The bonding layer 3 which exerts the effect of the stress buffering material is formed thick, and the stress can be appropriately moderated.
又，此時，若主凸部12面積愈大則愈有降低該部分熱阻之效果，但因設置主凸部12的部分之接合層3厚度較薄，故應力緩衝效果會降低，在凸部的周緣部，應力會變高。然而，藉由將主凸部12面積做成規定以下，能夠 使主凸部12的接合層3之應力最大值比元件2的周緣部位置之應力還小。 Further, at this time, if the area of the main convex portion 12 is larger, the effect of reducing the thermal resistance of the portion is further reduced. However, since the thickness of the bonding layer 3 of the portion where the main convex portion 12 is provided is thin, the stress buffering effect is lowered, and the convexity is lowered. At the peripheral portion of the part, the stress becomes high. However, by making the area of the main convex portion 12 equal to or less than a predetermined level, it is possible to The stress maximum of the bonding layer 3 of the main convex portion 12 is made smaller than the stress of the peripheral portion position of the element 2.
亦即，為了不使應力最大值增大，必須限制主凸部12的面積，但反過來說，因周緣部的熱阻不會有太大變化，故最高溫減低效果會受限。此外，面積比元件2還小的主凸部12係位於中央部，如此一來，元件2於接合時等可能會容易傾斜。鑑此，使規定寬度的副凸部13形成於主凸部12周圍，藉此，對於前述應力減緩不會造成減損，而能夠使從中央部朝周緣方向傳導的熱，通過該副凸部13而傳導至下方的構件。亦即，能夠提升最高溫減低效果。又，也能防止元件2於接合時等發生傾斜。 That is, in order not to increase the maximum value of the stress, it is necessary to limit the area of the main convex portion 12, but conversely, since the thermal resistance of the peripheral portion does not change much, the effect of lowering the maximum temperature is limited. Further, the main convex portion 12 having a smaller area than the element 2 is located at the central portion, so that the element 2 may be easily inclined at the time of joining or the like. With this, the sub-protrusion portion 13 having a predetermined width is formed around the main convex portion 12, whereby the stress is relieved without being damaged, and the heat conducted from the central portion toward the peripheral direction can pass through the sub-protrusion portion 13. And conduction to the components below. That is, it can improve the maximum temperature reduction effect. Further, it is also possible to prevent the element 2 from being tilted at the time of joining or the like.
再者，使用銲料等來進行接合層3的熔融接合時，理想狀況是接合時不留下任何助銲劑或孔隙，但當元件2的面積愈大，則助銲劑或孔隙會愈難從接合面逃逸出來。即使助銲劑或孔隙未能排出，但因有凸部12、13，故會避開它們而聚集在凹部，在該部分熱阻雖會稍微上昇，但在熱容易蓄積的元件2之中央部，會因主凸部12而得以確保散熱性。 Further, when soldering or the like is used for the fusion bonding of the bonding layer 3, it is desirable that no flux or void is left at the time of bonding, but as the area of the element 2 is larger, it becomes more difficult for the flux or the void to be bonded from the bonding surface. Escaped. Even if the flux or the pores are not discharged, since the convex portions 12 and 13 are present, they are collected in the concave portion while avoiding them, and the thermal resistance is slightly increased in this portion, but in the central portion of the element 2 where heat is easily accumulated, Heat dissipation is ensured by the main convex portion 12.
此外，佔有規定以上面積的主凸部12，係形成於基準面11(或背側基準面14)之中央部，故第1熱傳導構件1等的中央部剛性會提升。其結果，第1熱傳導構件1等不易產生形變，故能夠限制第1熱傳導構件1等之翹曲。 In addition, since the main convex portion 12 that occupies a predetermined area or more is formed in the central portion of the reference surface 11 (or the back reference surface 14), the rigidity of the central portion of the first heat conduction member 1 or the like is increased. As a result, the first heat conduction member 1 or the like is less likely to be deformed, so that the warpage of the first heat conduction member 1 or the like can be restricted.
另，當副凸部13是從基準面11(或背側基準面14) 的中心朝周緣方向形成為漩渦狀的情形下，副凸部13便不會沿著剪切應力的應力向量之方向。其結果，亦能使剪切應力降低。 In addition, when the sub convex portion 13 is from the reference surface 11 (or the back side reference surface 14) In the case where the center is formed in a spiral shape toward the circumferential direction, the sub-protrusion portion 13 does not follow the direction of the stress vector of the shear stress. As a result, the shear stress can also be lowered.
以上已說明本發明之實施形態，但本發明並不限定於此，可因應發明主旨而適當變更實施。又，本發明中，兼顧熱阻與應力減緩為其最代表性之效果，但在熱阻及應力減緩其中一者較受重視時亦可強調其中一者，在本發明規定之範圍內，藉由適當調整凸部的配置、形狀、面積、高度，能夠容易地達成。 The embodiments of the present invention have been described above, but the present invention is not limited thereto, and may be appropriately modified and implemented in accordance with the gist of the invention. Moreover, in the present invention, both thermal resistance and stress mitigation are considered as the most representative effects, but one of the thermal resistance and the stress mitigation may be emphasized, and within the scope of the present invention, The arrangement, shape, area, and height of the convex portions can be easily adjusted.
接下來，針對本發明之熱傳導構件，將使用依本發明規定構成的熱傳導構件(實施例)進行模擬之結果，以及使用未依本發明規定構成的熱傳導構件(比較例)進行模擬之結果加以對比，並具體說明之。 Next, with respect to the heat conduction member of the present invention, the result of simulation using the heat conduction member (embodiment) constructed according to the present invention and the result of simulation using the heat conduction member (comparative example) not configured according to the present invention are compared. And specify it.
實施例之熱傳導構件，如圖1、圖2所示，係使用在基準面的中央部形成有主凸部者(試驗體3、7~9)、以及形成有主凸部與16個副凸部者(試驗體1、2)。 As shown in FIGS. 1 and 2, the heat conduction member of the embodiment uses a main convex portion (test body 3, 7 to 9) and a main convex portion and 16 sub-convex portions in a central portion of the reference surface. Part (test body 1, 2).
另一方面，比較例之熱傳導構件，係使用在基準面完全未形成凸部者(試驗體4~6)、以及主凸部的先端部面積落在本發明規定範圍外者(試驗體10、11)。 On the other hand, in the heat conduction member of the comparative example, those in which the convex portion is not formed on the reference surface (test bodies 4 to 6) and the tip end portion of the main convex portion falls outside the range specified by the present invention (test body 10, 11).
另，熱傳導構件係為銅板(純銅：長12mm×寬 12mm)，且形成凸部的部分之厚度為1.14mm、未形成凸部的部分之厚度為1.00mm。 In addition, the heat conduction member is a copper plate (pure copper: length 12 mm × width) 12 mm), the thickness of the portion where the convex portion is formed is 1.14 mm, and the thickness of the portion where the convex portion is not formed is 1.00 mm.
有關其餘詳細的熱傳導構件形狀，如表1所示。另，表1中所謂「凸部面積比」，係指主凸部及副凸部的先端部合計面積相對於基準面面積之比率；所謂「主凸部面積比」，係指主凸部的先端部面積相對於基準面面積之比率。所謂「凸側面傾斜」，係指基準面與凸部側面之夾角。所謂「主(副)凸先端部1邊」，係指凸部的先端部的1邊之長度；所謂「主(副)凸基端部1邊」，係指凸部的基端部的1邊之長度。 The remaining detailed heat transfer member shapes are shown in Table 1. In addition, the "protrusion area ratio" in Table 1 means the ratio of the total area of the tip end portions of the main convex portion and the sub-protrusion portion to the reference surface area; the "main convex portion area ratio" means the main convex portion. The ratio of the area of the tip end to the area of the reference plane. The term "convex side slope" refers to the angle between the reference surface and the side surface of the convex portion. The "main (sub) convex tip end 1 side" refers to the length of one side of the tip end portion of the convex portion; the "main (sub) convex base end portion 1 side" refers to the base end portion of the convex portion. The length of the side.
作為半導體裝置，如圖1、圖2所示，係假想為搭載了俯視形狀呈正方形之Si元件(長10mm×寬10mm×高0.15mm：發熱量5000W/cm3)。又，將發熱近似為在元件全體均一發生。又，在Si元件與前述熱傳導構件之間設置接合層。前述接合層係與基準面相同大小，且訂為如表1記載之厚度的無鉛銲料(成分Sn-3%Ag-0.5%Cu)。此外，為便於模擬，前述元件、接合層、及熱傳導構件做成俯視時皆呈軸對稱，接合面完全密合，凸部之形狀做成俯視時呈正方形、剖視時呈梯形或長方形。又，熱傳導構件背面，假想為藉由60℃的水以熱傳導係數20000W/m2/K接受冷卻，並進行模擬。 As shown in FIG. 1 and FIG. 2, the semiconductor device is assumed to have a Si element (length 10 mm × width 10 mm × height 0.15 mm: calorific value 5000 W/cm 3 ) having a square shape in plan view. Moreover, the heat generation is approximated to occur uniformly in all of the elements. Further, a bonding layer is provided between the Si element and the heat conduction member. The bonding layer was the same size as the reference surface, and was set to have a lead-free solder (component Sn-3% Ag-0.5% Cu) as shown in Table 1. Further, in order to facilitate the simulation, the element, the bonding layer, and the heat conduction member are axially symmetrical in plan view, and the bonding surface is completely in close contact with each other. The shape of the convex portion is square in plan view and trapezoidal or rectangular in cross section. Further, the back surface of the heat conduction member was assumed to be cooled by a heat transfer coefficient of 20000 W/m 2 /K by water at 60 ° C, and simulated.
另，實際之半導體裝置等，其形狀或配置雖然大多有 對稱性不完全之情形，但本發明之有效性係可以原理確認，可輕易地推展其原理而將其結果應用在實際的半導體裝置等。 In addition, actual semiconductor devices, etc., have many shapes or configurations. The case where the symmetry is incomplete, but the effectiveness of the present invention can be confirmed by the principle, and the principle can be easily extended to apply the result to an actual semiconductor device or the like.
針對使用實施例之熱傳導構件的半導體裝置、以及使用比較例之熱傳導構件的半導體裝置，在假定沒有溫度分布及各部塑性變形的情形下，利用「MemsONE」(登錄商標：日本財團法人Micromachine Center)Ver.4.0之「熱傳導與力學達成解析」來進行靜應力分布之模擬。 For the semiconductor device using the heat conduction member of the embodiment and the semiconductor device using the heat conduction member of the comparative example, it is assumed that there is no temperature distribution and plastic deformation of each part, and "MemsONE" (registered trademark: Micromachine Center) .4.0 "Analysis of heat conduction and mechanics" to simulate the static stress distribution.
經模擬之解析結果如表1及圖7所示。 The analytical results of the simulation are shown in Table 1 and Figure 7.
此處所謂「最高溫」，係指熱傳導構件中的最高溫度，雖會因發熱量、熱傳導率、冷卻水溫度等而變化，但還有與此無關而能夠比較之值，即「熱阻」。不過，由於壓印(emboss)效果不一，最高溫未必會位於中央，故方便起見，此處將定義變更如下。 Here, the "highest temperature" means the highest temperature in the heat conduction member, and may vary depending on the amount of heat generation, thermal conductivity, cooling water temperature, etc., but there is a value comparable to this, that is, "thermal resistance". . However, since the effects of embossing are different, the highest temperature may not be centrally located, so for convenience, the definitions here are changed as follows.
熱阻=(最高溫-銅板下面中心溫度)/全發熱量 Thermal resistance = (the highest temperature - the central temperature below the copper plate) / full heat
此外，應力之比較，係使用銲料層的Von Mises應力最大值。這是因為銲料層最容易因熱循環(Heat Cycle)而引發疲勞破壞，故被認為適合用來作為比較本發明效果之指標。 In addition, the stress is compared using the maximum Von Mises stress of the solder layer. This is because the solder layer is most likely to cause fatigue damage due to the heat cycle, and is considered to be suitable as an index for comparing the effects of the present invention.
試驗體1~3、7~9滿足本發明規定之全部要件，故可發現熱阻抑制在0.04K/W以下，且銲料層Von Mises應力最大值抑制在132MPa以下。 Since the test bodies 1 to 3 and 7 to 9 satisfied all the requirements of the present invention, it was found that the thermal resistance was suppressed to 0.04 K/W or less, and the maximum Von Mises stress of the solder layer was suppressed to 132 MPa or less.
亦即，可發現本發明之熱傳導構件，能夠維持很高的熱傳導率，同時減緩因元件發熱而產生之應力。 That is, it can be found that the heat conducting member of the present invention can maintain a high thermal conductivity while alleviating the stress generated by the heat of the element.
1‧‧‧熱傳導構件(第1熱傳導構件) 1‧‧‧heat conducting member (first heat conducting member)
2‧‧‧發熱體(元件) 2‧‧‧heating body (component)
11‧‧‧基準面 11‧‧‧Datum
12‧‧‧主凸部 12‧‧‧Main convex
20‧‧‧半導體裝置 20‧‧‧Semiconductor device
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