TWI259211B - Heat-dissipation body containing diamond powder - Google Patents

Heat-dissipation body containing diamond powder Download PDF

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Publication number
TWI259211B
TWI259211B TW91103536A TW91103536A TWI259211B TW I259211 B TWI259211 B TW I259211B TW 91103536 A TW91103536 A TW 91103536A TW 91103536 A TW91103536 A TW 91103536A TW I259211 B TWI259211 B TW I259211B
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Taiwan
Prior art keywords
diamond powder
heat
heat sink
diamond
powder
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TW91103536A
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Chinese (zh)
Inventor
Jian-Min Sung
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Jian-Min Sung
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Abstract

The present invention is related to a heat-dissipation body containing diamond powder, which pulverize artificial or natural cheap waste material of diamond and screen to make the diamond granule be suitable for mixing with the metal powder. Wrapping or filling up the sintered body of this composite material with packaging chips. Also viscose or other organic substances can be mixed therewith to act as a heat-dissipation rubber or heat-dissipation filler. The present invention makes the heat-dissipation body containing diamond powder be able to reach the best heat-dissipation effect and substantially increase the thermal conductivity coefficient of packaged sintered body.

Description

五、創作說明(/) 一種含鑽石粉末的散熱體,係用於包 片’為-、散熱能力極佳含鑽石微粉之複合材=。、補封裝晶 爾定二'光1元件的功能及速率在乃隨摩 疋伴(M〇0re s low),每! 8個月則提昇近_<立 :的同時,產品的外形亦朝輕薄短小的方向J展,無論功 =夕^都會提高晶片的功率和頻率,因此 呆作時的溫度大為增加,目前高能晶片功率已上= 7果沒有更好的散熱卿,這些晶#的溫度將可 旎會超過loot,使喪失晶片功能。 目前晶片多為半導體(如秒、坤化鎵)所製成,其内含有 夕量的金屬導線以及絕緣薄膜,這兩者之間的熱膨服係數 相差數倍,其物化特性參看第_圖所示,因此纟坑以上 時’晶片多會產生裂紋以致其不堪使用,即使勉強操作, 當溫度接$ loot時半導體的導電性會增加,因而使晶片 的功能完全喪失。 為使晶片不會因過熱而燒壞,因此需將電流所產生的 廢熱儘快排除,另外,晶片的導線寬度越窄,其排熱的速 率則要更快,目前的晶片線寬為013微米,此時晶片仍可 以埋藏在目前散熱最快的金屬基陶瓷燒結體内(如鋁基的碳 化矽),這個封裝材料之外,再以銅片散熱,最後將金屬 (如銅或鋁)葉片以風扇吹冷,可勉強符合其散熱要求,但 效果並不佳。 而當金屬線寬減到0· 1微米以下時,金屬基陶瓷燒結體 已來不及散熱,此時晶片則有燒毀之慮,因此,必須以更 3 本纸張尺度適用中國國家標準(CNS)A4規格(2]0 X 297公爱) 五、創作說明(v) 有效的封裝材料將熱吸 每平方公八二丄r A 鑽石膜或其他方法將熱以 材料可、以上的速率冷卻,但目前卻苦無適當 T J以用為散熱的封裝材料。 冷凝除盤此和外加的散熱片(如鑽石、真m 承受高ΛΓ:屬熱沈等)必須密切接合,由於晶片不能 以散熱 或陶究(如/1/ 散熱膠内含有懸浮的金屬(如銀) 此散敎狀^士Γ 這些材質的熱傳導係數都偏低,因 此亀黏結的接縫處也常成為散熱的瓶頭。 實二於前述習用之含鑽石粉末的散熱體,在 發明,即將人造或天_禮二子在,而予以重新 苴 …、廉饧鑽石廢料將之碾碎並篩分,使 裝晶屬粉末混合,將此複合材料包覆或填補封 或:熱填充物#中混入黏膠或其他有機物,做為散熱膠 散熱絲,及大粉末的散熱體可達到最佳之 、 棱鬲封裝燒結體的熱傳導係數。 俨二了可曰達到别述的發明目的,本發明所運用的技術手 鑽石部份比例為i :33\末;^熱體,其鑽石粉末與非 其鑽石粉末的粒徑小方 其非鑽石的部份含有名 所述之含鑽石粉末的散熱體 150微米。 所述之含鑽石粉末的散熱體 屬材料。 其金屬含有銅材料或 所述之含鑽石粉末的散熱體 1259211V. Creation Instructions (/) A heat sink containing diamond powder is used for the composite of the package with a heat dissipation capability and fine diamond powder. The function and speed of the packaged crystallized two 'light 1 components are in the M随0re s low, each! In 8 months, it is closer to _<立: At the same time, the shape of the product is also in the direction of light and short, and the power and frequency of the wafer will be increased regardless of the work, so the temperature at the time of staying is greatly increased. The high-energy chip power has been on the = 7 fruit without better heat dissipation, and the temperature of these crystals will be more than the loot, making the wafer function lost. At present, most of the wafers are made of semiconductors (such as seconds and gallium), which contain metal wires and insulating films. The thermal expansion coefficient between the two is several times different. The physicochemical properties are shown in the figure. As shown, when the crater is above, the wafer will be cracked so that it will be unusable. Even if it is barely operated, the conductivity of the semiconductor will increase when the temperature is connected to Lot, thus completely losing the function of the wafer. In order to prevent the wafer from being burned out due to overheating, the waste heat generated by the current needs to be eliminated as soon as possible. In addition, the narrower the wire width of the wafer, the faster the rate of heat removal, and the current line width of the wafer is 013 micrometers. At this time, the wafer can still be buried in the current heat-dissipating metal-based ceramic sintered body (such as aluminum-based tantalum carbide). In addition to this packaging material, the copper sheet is used to dissipate heat, and finally the metal (such as copper or aluminum) blades are The fan is blown cold, and it can barely meet its heat dissipation requirements, but the effect is not good. When the metal line width is reduced to less than 0.1 μm, the metal-based ceramic sintered body is too late to dissipate heat. At this time, the wafer has burnt considerations. Therefore, it is necessary to apply the Chinese National Standard (CNS) A4 to three more paper scales. Specifications (2]0 X 297 public) V. Creation instructions (v) Effective packaging materials will be hot-sucked per square metric 丄 丄 A A diamond film or other methods to heat the material at a rate above, but at the current rate However, there is no suitable TJ for the use of heat-dissipating packaging materials. Condensation and removal of the heat sink (such as diamonds, true m high temperature: heat sink, etc.) must be closely joined, because the wafer can not be used for heat dissipation or ceramics (such as /1/ heat sink contains suspended metal (such as Silver) This material has a low heat transfer coefficient, so the joints of the 亀 bond often become the head of the heat dissipation. The second heat sink of the diamond powder used in the above is invented Artificial or _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Adhesive or other organic matter, as a heat-dissipating heat-dissipating wire, and a heat-dissipating body of a large powder can achieve the best heat transfer coefficient of the sintered body of the prismatic package. The second invention can achieve the purpose of the invention described above, and the invention is applied The technical part of the diamond part ratio is i: 33 / end; ^ hot body, the diamond powder and non-diamond diamond powder particle size is small, the non-diamond part contains the name of the diamond powder containing heat sink 150 micron Diamond powder The heat sink body material. The metal contains copper material or the heat sink containing the diamond powder 1259211

!2592ΐι 五、創作說明(q ::::::或:::… 由於過去的工業鑽石粉末相當昂主 在使用上較不符合成本,但,V十幾= 石’製作成本低,因此使其價格每況愈 =業鑽石的廢料可碾碎成為微粉,其單價更 石的外,天然鑽石的80%以上都是不能琢磨成寶 找這些工業鑽石生產過剩,屯積數十年還 找不到適當的工業用途。 、本發明乃將人造或天然廉價鑽石廢料將之碾碎並筛 i ’使其粒度(如50微米)適合和金屬粉末(如銅或銘)混 δ,在混合時要儘量提高鑽石體積的比率,若鑽石和金屬 的粒度相當,這個比率會接近1/2,如果鑽石比金屬粉末大 (如七倍),則此比率可以提高至2/3,配合鑽石之大小顆 粒,金屬粉則可以更細,使鑽石的體積比高達3/4,鑽石的 體積比越南,顆粒的接觸面積會越大,散熱的效果就會更 好,另,其選用的鑽石粉末粒度具有兩峰值,最大峰值為 最小峰值之5 — 9倍。 在貫施時,參看第二圖所示,可將此晶片散熱材料 (1 0 )包覆於晶片(2 0 )之外,加熱燒結使其成塊,這 樣就會成為散熱隶快的封裝實體,除此之外,鑽石的熱膨 脹係數返低金屬材料,因此,含多量鑽石的金屬基複合材 料其熱膨脹係數則相對甚低,如此可與其封裝的矽晶匹配 (矽晶的熱膨脹係數比鑽石略高),如此,封裝和矽晶之間!2592ΐι V. Creation Description (q :::::: or ::::... Because the industrial diamond powder used in the past is quite inconsistent with the cost of use, but V 10 = stone 'production cost is low, so The price of the industry is more and more = the waste of diamonds can be crushed into micro-powder, and its unit price is more stone. More than 80% of natural diamonds cannot be honed into treasures to find overproduction of these industrial diamonds. To appropriate industrial use. The present invention crushes and sifts artificial or natural cheap diamond waste to make it a particle size (such as 50 microns) suitable for mixing with metal powder (such as copper or Ming), when mixing Try to increase the ratio of the volume of the diamond. If the size of the diamond and the metal are the same, the ratio will be close to 1/2. If the diamond is larger than the metal powder (such as seven times), the ratio can be increased to 2/3, matching the size of the diamond. The metal powder can be finer, so that the volume ratio of the diamond is as high as 3/4. The volume of the diamond is larger than that of Vietnam. The contact area of the particles will be larger, and the heat dissipation effect will be better. In addition, the diamond powder particle size selected has two. Peak value 5 to 9 times the minimum peak value. When applied, referring to the second figure, the heat dissipation material (10) of the wafer can be coated on the outside of the wafer (20) and heated and sintered to form a block. In addition, the thermal expansion coefficient of the diamond is lower than that of the metal material. Therefore, the metal matrix composite material containing a large amount of diamond has a relatively low thermal expansion coefficient, so that it can be matched with the twin crystal of the package ( The coefficient of thermal expansion of twins is slightly higher than that of diamonds, so between encapsulation and twinning

(請先閱讀背面之注意事項再填驾本頁) •^^衣--------訂--------- 五、創作說明(f ;) 的熱應力產出極小,使此界面不會分裂。 另本灸明之含鑽石粉末的散熱體,亦可、、昆入#膜或 =幾:(如環氧樹腊、樹脂等)做為散熱膠㈡二 ;ί;、=壯這類流質散熱膠(30)可用以黏結散熱材 料或填補封裝乃至晶片内的孔隙。 J上所述,本發明之含鑽石粉末的散熱體,以鑽石混 入之複合材料會制最佳的散熱效果,以本發明之含鑽石 私末的政熱體封Haa,可解決目前高功率π(如C阳)所 遇到的散熱瓶頸,大符提高其散熱效率。 7(Please read the notes on the back and fill in this page) • ^^衣--------Book--------- V. Creation instructions (f ;) Thermal stress yield is minimal So that this interface will not split. In addition, the heat-dissipating body of the diamond powder containing the moxibustion can also be used as a heat-dissipating glue (2) two; (such as epoxy tree wax, resin, etc.); (30) can be used to bond the heat sink material or fill the pores in the package or even the wafer. According to J, the heat-dissipating body containing the diamond powder of the present invention has the best heat-dissipating effect by the composite material mixed with diamonds, and the current high-power π can be solved by sealing the Haa with the diamond-containing private heat body of the present invention. (such as C Yang) encountered the heat bottleneck, Da Fu increased its heat dissipation efficiency. 7

Claims (1)

12592Π . 羞一告、一'..... 玫!丄申請專利範_—' — 1 · 一種含鑽石粉末的散熱體,其中鑽石粉末的體積 百分比爲3 3〜7 5。 2 ·如申請專利範圍第1項所述之含鑽石粉末的散熱 體,其鑽石粉末的粒徑小於15〇微米。 3 ·如申請專利範圍第1項所述之含鑽石粉末的散熱 體,其中鑽石粉末的其他部份含有金屬材料。 4·如申請專利範圍第3項所述之含鑽石粉末的散熱 體,其金屬含有銅材料或鋁材料。 5 ·如申請專利範圍第1或3項所述之含鑽石粉末的 散熱體,其中鑽石粉末的其他部份含有有機物。 6·如申請專利範圍第5項所述之含鑽石粉末的散熱 體,其有機物爲環氧樹脂、樹脂或壓克力膠。 7 ·如申請專利範圍第1項所述之含鑽石粉末的散熱 體,其鑽石粉末之粒度具有兩峰値,最大峰値爲最小峰値 之5 — 9倍。 8·如申請專利範圍第1項所述之含鑽石粉末的散熱 體,其用於晶片的封裝。 9 ·如申請專利範圍第5項所述之含鑽石粉末的散熱 體,其用於導熱的封膠。 1〇·如申請專利範圍第1項所述之含鑽石粉末的散 熱體,其乃以燒結法製成。 11·如申請專利範圍第1項所述之含鑽石粉末的散 熱體,其乃以有機物膠結而成。12592Π . Shame, a '..... Mei! 丄 Patent Application _—' — 1 · A heat sink containing diamond powder, in which the volume percentage of diamond powder is 3 3~7 5 . 2. The diamond powder-containing heat sink of claim 1, wherein the diamond powder has a particle size of less than 15 μm. 3. A heat sink containing diamond powder as described in claim 1 wherein the other portion of the diamond powder contains a metallic material. 4. The heat sink containing the diamond powder as described in claim 3, the metal of which contains a copper material or an aluminum material. 5. A heat sink containing a diamond powder as claimed in claim 1 or 3, wherein the other part of the diamond powder contains an organic substance. 6. The heat sink containing the diamond powder as described in claim 5, wherein the organic substance is an epoxy resin, a resin or an acrylic glue. 7. The diamond powder-containing heat sink according to claim 1, wherein the diamond powder has a particle size of two peaks and a maximum peak of 5 to 9 times the minimum peak. 8. A heat sink containing a diamond powder as described in claim 1 for use in wafer packaging. 9) A heat sink containing diamond powder as described in claim 5, which is used for a thermally conductive sealant. 1) A heat powder containing a diamond powder as described in claim 1 of the patent application, which is produced by a sintering method. 11. A heat powder containing diamond powder as described in claim 1 of the patent application, which is formed by cementing organic matter.
TW91103536A 2002-02-27 2002-02-27 Heat-dissipation body containing diamond powder TWI259211B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398507B (en) * 2009-07-03 2013-06-11 Kinik Co Thermal paste with modified diamond particles and manufacture method thereof
US8848339B2 (en) 2011-12-15 2014-09-30 Industrial Technology Research Institute Capacitor and manufacturing method thereof
US9611392B2 (en) 2011-12-15 2017-04-04 Industrial Technology Research Institute Self-assembly coating material, heat sink and method of forming heat sink
US10748833B2 (en) 2018-09-06 2020-08-18 Samsung Electronics Co., Ltd. Fan-out semiconductor package

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398507B (en) * 2009-07-03 2013-06-11 Kinik Co Thermal paste with modified diamond particles and manufacture method thereof
US8848339B2 (en) 2011-12-15 2014-09-30 Industrial Technology Research Institute Capacitor and manufacturing method thereof
US9611392B2 (en) 2011-12-15 2017-04-04 Industrial Technology Research Institute Self-assembly coating material, heat sink and method of forming heat sink
US10748833B2 (en) 2018-09-06 2020-08-18 Samsung Electronics Co., Ltd. Fan-out semiconductor package
TWI709206B (en) * 2018-09-06 2020-11-01 南韓商三星電子股份有限公司 Fan-out semiconductor package

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