CN100401006C - Radiating body containing diamond powder - Google Patents
Radiating body containing diamond powder Download PDFInfo
- Publication number
- CN100401006C CN100401006C CNB03131001XA CN03131001A CN100401006C CN 100401006 C CN100401006 C CN 100401006C CN B03131001X A CNB03131001X A CN B03131001XA CN 03131001 A CN03131001 A CN 03131001A CN 100401006 C CN100401006 C CN 100401006C
- Authority
- CN
- China
- Prior art keywords
- diamond
- diamond powder
- radiator
- chip
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 64
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 64
- 239000000843 powder Substances 0.000 title claims abstract description 39
- 239000005416 organic matter Substances 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000003522 acrylic cement Substances 0.000 claims description 2
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 15
- 239000002184 metal Substances 0.000 abstract description 15
- 239000002131 composite material Substances 0.000 abstract description 6
- 238000002156 mixing Methods 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 239000002699 waste material Substances 0.000 abstract description 4
- 239000000945 filler Substances 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 230000000191 radiation effect Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 230000005855 radiation Effects 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920000297 Rayon Polymers 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012261 overproduction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to a radiating body containing diamond powders, which is characterized in that man-made or natural and cheap diamond waste material is crushed and sieved to lead the granularity of a diamond to be proper, and the granularity of the diamond is suitable for mixing the diamond and metal powders; a packaging chip is coated or filled with a sintered body of composite material; an adhesive or other organic substances can be mixed into the composite material as a radiating adhesive or radiating fillers. Therefore, the radiating body containing diamond powders can reach best radiation effect, and the thermal conductivity of the packaging sintered body can be greatly improved.
Description
Technical field
A kind of radiator that contains diamond powder is to be used for coating or filling up packaged chip, is the splendid composite that contains the diamond micro mist of a heat-sinking capability.
Background technology
Because in the past over 30 years, the function of photoelectric subassembly and speed are being with Moore's Law (Moore ' s Low), then promoted nearly one times in per 18 months, and in than progress, the profile of product also develops towards compact direction, function and profile all can improve the power and the frequency of chip, therefore, temperature when causing the operation of chip greatly increases, the high energy chip power has reached a hectowatt (watts) at present, if there is not better cooling mechanism, the temperature of these chips may surpass 100 ℃, make the forfeiture chip functions.
It is made that current chip mostly is semiconductor (as silicon, GaAs), it contains the plain conductor and the insulation film of volume, thermal coefficient of expansion between the two differs several times, its physicochemical characteristic is referring to shown in Figure 1, therefore more than 65 ℃ the time, chip is many can to crack so that it can't bear to use, even operation reluctantly, when temperature during near 100 ℃ semi-conductive electric conductivity can increase, thereby the function of chip is completely lost.
For chip can not burnt out because of overheated, therefore need the used heat that electric current produced is got rid of as early as possible, in addition, the conductor width of chip is narrow more, the speed of its heat extraction is then faster, present chip live width is 0.13 micron, and this moment, chip still can be imbedded in the fastest ceramic on metal sintered body of present heat radiation (as aluminium base carborundum), outside this encapsulating material, dispel the heat with copper sheet again, at last with metal (as copper or aluminium) blade with the fan blast-cold, can meet its heat radiation requirement reluctantly, but effect is not good.
And when below the metal wire reductions to 0.1 micron, the ceramic on metal sintered body has had little time heat radiation, this moment, chip then had the worry of burning, therefore, must be with more effective encapsulating material with hot sucking-off, with diamond film or other method heat is cooled off with every square centimeter of speed more than 30 watts again, can be but suffer from not having suitable material at present with being the encapsulating material that dispels the heat.
In addition, packaging body and the necessary intimate engagement of the fin (as diamond, vacuum gasifying condensate pans, pottery or metal heat sink etc.) that adds, because chip can not bear high temperature, so joint can not weld with motlten metal, therefore be to cohere usually with thermal paste, above-mentioned this thermal paste contains the metal (as silver) or the pottery (as aluminium oxide) of suspension, but the coefficient of heat conduction of these materials is all on the low side, so the seam crossing that coheres of thermal paste also often becomes the bottleneck of heat radiation.
Summary of the invention
The present inventor is because the aforementioned radiator of commonly using that contains diamond powder, in practical application, truly have the not good shortcoming of its heat-sinking capability to exist, and invent again, be about to artificial or natural cheap diamond waste material will pulverize and sieve, its granularity is fit to and the metal dust mixing, this composite is coated or fills up packaged chip, also can sneak into viscose or other organic matter therein, as thermal paste or heat radiation filler, so that this radiator that contains diamond powder can reach best radiating effect, and significantly improve the coefficient of heat conduction of packaging sintering body.
In order to reach aforesaid goal of the invention, the technological means that the present invention used is to be to provide a kind of radiator that contains diamond powder, and its diamond powder and non-diamond partly ratio are 1: 3～3: 1.
The described radiator that contains diamond powder, the particle diameter of its diamond powder is less than 150 microns.
The described radiator that contains diamond powder, the part of its non-diamond contains metal material.
The described radiator that contains diamond powder, its metal contains copper product or aluminum.
The described radiator that contains diamond powder, the part of its non-diamond contains organic matter.
The described radiator that contains diamond powder, its organic matter are epoxy resin, resin or acryl glue.
The described radiator that contains diamond powder, the granularity of its diamond powder has two peak values, and peak-peak is minimum peak 5-9 times.
The described radiator that contains diamond powder, it is used for the encapsulation of chip.
The described radiator that contains diamond powder, it is used for the encapsulation of heat conduction.
The described radiator that contains diamond powder, it is to make with sintering process.
The described radiator that contains diamond powder, it is to form with the organic matter gluing.
For making your auditor can understand the invention structure of this case really, and goal of the invention and effect, below enumerate a specific embodiment now, and cooperate graphic being described in detail as follows:
Description of drawings
Fig. 1 is the pyroconductivity of each material.
Fig. 2 is a profile of the present invention.
In the accompanying drawing:
10--chip cooling material
The 20--chip
The 30--thermal paste
The 40--fin
The specific embodiment
Press, referring to shown in Figure 1, the coefficient of heat conduction of diamond is soprano in all material, and therefore, the rate of heat transfer of diamond when normal temperature is silver of rate of heat transfer the best in the metal or five times of copper.
Because carbonado powder in the past is quite expensive, almost with the gold equivalence, therefore do not meet cost in the use, but, with the carbonado of high-pressure process manufacturing, cost of manufacture is low in recent ten years, therefore its price is go from bad to worse, the waste material of manufacture diamond can pulverize becomes micro mist, and its unit price is lower.In addition, rough diamond all be the carbonado that can not ponder into jewel more than 80%, and these carbonado overproductions are hoarded many decades and also be can not find suitable industrial use.
The present invention pulverizes artificial or natural cheap diamond waste material and sieves with it, its granularity (as 50 microns) is fit to and metal dust (as copper or aluminium) mixing, when mixing, to improve the ratio of diamond volume as far as possible, if the granularity of diamond and metal is suitable, this ratio can be near 1/2, if diamond is than metal dust big (as seven times), then this ratio can be increased to 2/3, cooperates the size particles of diamond, metal powder then can be thinner, the volume ratio that makes diamond is up to 3/4, and the volume ratio of diamond is high more, and the contact area of particle can be big more, the effect of heat radiation will be better, in addition, its diamond powder granularity of selecting for use has two peak values, and peak-peak is 5-9 a times of minimum peak.
When implementing, referring to shown in Figure 2, this chip cooling material 10 can be coated on outside the chip 20, heat-agglomerating makes it become piece, will become the fastest package implementation of heat radiation like this, in addition, the far low metal material of the thermal coefficient of expansion of diamond, therefore, its thermal coefficient of expansion of metal-base composites that contains the volume diamond is then relatively very low, so can mate (thermal coefficient of expansion of silicon wafer is slightly higher than diamond) with the silicon wafer of its encapsulation, so, thermal stress between encapsulation and the silicon wafer produces minimum, and this interface can not divided.
In addition, the radiator that contains diamond powder of the present invention, also can sneak into viscose or other organic matter (as epoxy resin, resin etc.) as thermal paste 30 or the heat radiation filler, this class liquid thermal paste 30 can in order to cohere heat sink material or fill up the encapsulation so that chip in hole.
In sum, the radiator that contains diamond powder of the present invention, the composite of sneaking into diamond can reach best radiating effect, with the radiator encapsulation silicon wafer that contains diamond powder of the present invention, can solve the heat radiation bottleneck that present high power IC (as CPU) is run into, significantly improve its radiating efficiency.
Claims (7)
1. a radiator that contains diamond powder is characterized in that, it is to form with the organic matter gluing, and it comprises diamond powder and non-diamond part, and this non-diamond is above-mentioned organic matter partly, and diamond powder and organic volume ratio are 1: 3～3: 1.
2. the radiator that contains diamond powder as claimed in claim 1 is characterized in that the particle diameter of its diamond powder is less than 150 microns.
3. the radiator that contains diamond powder as claimed in claim 1 or 2 is characterized in that, this organic matter is epoxy resin, resin or acryl glue.
4. the radiator that contains diamond powder as claimed in claim 1 is characterized in that the granularity of this diamond powder has two peak values, and peak-peak is 5-9 a times of minimum peak.
5. the radiator that contains diamond powder as claimed in claim 1 is characterized in that it is used for the encapsulation of chip.
6. the radiator that contains diamond powder as claimed in claim 1 is characterized in that it is used for the sealing of heat conduction.
7. the radiator that contains diamond powder as claimed in claim 1 is characterized in that it is to make with sintering process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03131001XA CN100401006C (en) | 2003-05-12 | 2003-05-12 | Radiating body containing diamond powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03131001XA CN100401006C (en) | 2003-05-12 | 2003-05-12 | Radiating body containing diamond powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1548915A CN1548915A (en) | 2004-11-24 |
| CN100401006C true CN100401006C (en) | 2008-07-09 |
Family
ID=34322754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB03131001XA Expired - Fee Related CN100401006C (en) | 2003-05-12 | 2003-05-12 | Radiating body containing diamond powder |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100401006C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102954729B (en) * | 2012-11-20 | 2016-01-20 | 无锡康柏斯机械科技有限公司 | A kind of radiator |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4378233A (en) * | 1981-07-24 | 1983-03-29 | Norton Company | Metal bonded grinding wheel containing diamond or CBN abrasive |
| US5008737A (en) * | 1988-10-11 | 1991-04-16 | Amoco Corporation | Diamond composite heat sink for use with semiconductor devices |
| JPH05347369A (en) * | 1992-06-15 | 1993-12-27 | Seiko Epson Corp | Resin sealing of electronic component |
| US5451352A (en) * | 1992-02-03 | 1995-09-19 | Pcc Composites, Inc. | Method of forming a diamond composite structure |
| US5786075A (en) * | 1995-02-10 | 1998-07-28 | Fuji Die Co., Ltd. | Heat sinks and process for producing the same |
-
2003
- 2003-05-12 CN CNB03131001XA patent/CN100401006C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4378233A (en) * | 1981-07-24 | 1983-03-29 | Norton Company | Metal bonded grinding wheel containing diamond or CBN abrasive |
| US5008737A (en) * | 1988-10-11 | 1991-04-16 | Amoco Corporation | Diamond composite heat sink for use with semiconductor devices |
| US5451352A (en) * | 1992-02-03 | 1995-09-19 | Pcc Composites, Inc. | Method of forming a diamond composite structure |
| JPH05347369A (en) * | 1992-06-15 | 1993-12-27 | Seiko Epson Corp | Resin sealing of electronic component |
| US5786075A (en) * | 1995-02-10 | 1998-07-28 | Fuji Die Co., Ltd. | Heat sinks and process for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1548915A (en) | 2004-11-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: RITEDIA CORPORATION Free format text: FORMER OWNER: SONG JIANMIN Effective date: 20120618 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20120618 Address after: Hsinchu County, Taiwan, China Patentee after: Laizuan Technology Co., Ltd Address before: China in Taiwan Taipei County town of Zhongshan Road No. 64 Patentee before: Song Jianmin |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080709 Termination date: 20150512 |
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| EXPY | Termination of patent right or utility model |