TWI257440B - Method for producing diamond film - Google Patents

Method for producing diamond film Download PDF

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Publication number
TWI257440B
TWI257440B TW093121951A TW93121951A TWI257440B TW I257440 B TWI257440 B TW I257440B TW 093121951 A TW093121951 A TW 093121951A TW 93121951 A TW93121951 A TW 93121951A TW I257440 B TWI257440 B TW I257440B
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Taiwan
Prior art keywords
gas
diamond film
raw material
layer
boron
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TW093121951A
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English (en)
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TW200506115A (en
Inventor
Hitoshi Noguchi
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Shinetsu Chemical Co
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Priority claimed from JP2003201021A external-priority patent/JP2005041719A/ja
Priority claimed from JP2003201019A external-priority patent/JP4828089B2/ja
Priority claimed from JP2003201018A external-priority patent/JP4781617B2/ja
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200506115A publication Critical patent/TW200506115A/zh
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Publication of TWI257440B publication Critical patent/TWI257440B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Description

i 1 i 11257440 之厚度爲20μηι以下之範圍內者。 9. 一種金剛石膜，係至少導入原料氣體並藉由氣相 反應而於基材上所製造的金剛石膜，其特徵爲：使作爲磷 或硼的摻雜源之P〇( 〇CH3) 3氣體、P(〇CH3) 3氣體、 B(OC2Hs) 3氣體之任—種包含於該原料氣體中，使用該 原料混合氣體並藉由氣相反應而於基板上堆積摻雜有磷或 硼的金剛石膜； 將使該原料氣體所包含的P〇( 〇CH3 ) 3氣體之對全 原料氣體的體積濃度，作成大於0容積％、1 8容積％以下 之範圍之濃度， 將使該原料氣體所包含的P( OCH3 ) 3氣體之對全原 料氣體的體積濃度，作成大於0容積％，1 5容積％以下之 範圍之濃度， 將使該原料氣體所包含的B( OC2H5 ) 3氣體之對全原 料氣體的體積濃度，作成大於0容積％，1 0容積％以下之 範圍之濃度者。 1 〇. —種金剛石膜，其特徵係依申請專利範圍第1項 之方法所製造，將該磷或硼之摻雜調整至使金剛石膜之電 阻率在2(TC下能成爲1〇7Ω · cm以下之範圍者。 11. 一種金剛石膜，其特徵係依申請專利範圍第1項 或第2項之方法所製造，於該基材上製造金剛石膜時，在 對該原料氣體中添加PO ( OCH3 ) 3氣體之下僅形成一部 分之層，而其他層則於原料氣體中不添加PO( OCH3 ) 3 氣體之下所形成者。 -3- 1257440 t . 12. —種金剛石膜，其特徵係依申請專利範圍第3項 之方法所製造，在添加P〇(OCH3)3氣體之下所形成一 部分之層，係形成於金剛石膜之全表面或一部分表面上者 ，所形成之厚度爲20 μπι以下之範圍內者。 13. —種金剛石膜，其特徵係依申請專利範圍第1項 或第2項之方法所製造，於該基材上製造金剛石膜時，在 對該原料氣體中添加P(〇CH3)3氣體之下僅形成一部分 φ之層，而其他層則於原料氣體中不添加P( 〇CH3 ) 3氣體 之下形成。 14. 一種金剛石膜，其特徵係依申請專利範圍第5項 之方法所製造，在添加P ( 〇CH3 ) 3氣體之下所形成一部 分之層，係形成於金剛石膜之全表面或一部分表面上者， 所形成之厚度爲20μηι以下之範圍內者。 15. —種金剛石膜，其特徵係依申請專利範圍第1項 或第2項之方法所製造，其中於該基材上製造金剛石膜時 φ ，在對該原料氣體中添加B ( OC2H5 ) 3氣體之下僅形成 -部分之層，而其他層則於原料氣體中不添加B(OC2H5)3 氣體之下形成。 16. —種金剛石膜，係依申請專利範圍第7項之方法 所製造，在添加B ( OC2H5 ) 3氣體之下所形成的一部分 之層，係形成於金剛石膜之全表面或一部分表面上者，所 形成之厚度爲20 μπι以下之範圍內者。 17. —種遮罩基板，其特徵係利用金剛石膜者，此金 剛石膜係至少導入原料氣體並藉由氣相反應而於基材上所 -4- 1257440 製JS的金剛石膜，使作爲磷或硼的摻雜源之p〇(〇CH3) 3 氣體' P(〇CH3) 3氣體、B(〇C2H5) 3氣體之任一種包 含於該原料氣體中，使用該原料混合氣體並藉由氣相反應 而於基板上堆積摻雜有磷或硼的金剛石膜； 將使該原料氣體所包含的PO(OCH3)3氣體之對全 原料氣體的體積濃度，作成大於0容積％、18容積％以下 之範圍之濃度， 將使該原料氣體所包含的P( 〇CH3 ) 3氣體之對全原 料氣體的體積濃度，作成大於〇容積％，15容積％以下之 範圍之濃度， 將使該原料氣體所包含的B( 〇C2H5 ) 3氣體之對全原 料氣體的體積濃度，作成大於〇容積％，1〇容積％以下之 範圍之濃度者。 18. —種遮罩基板，其特徵係利用依申請專利範圍第 1項之方法所製造，將該磷或硼之摻雜調整至使金剛石膜 之電阻率在20°C下能成爲1〇7Ω · cm以下之範圍的金剛 石膜者。 1 9 · 一種遮罩基板，其特徵係利用依申請專利範圍第 1項或第2項之方法所製造，於該基材上製造金剛石膜時 ，在對該原料氣體中添加PO ( 〇CH3 ) 3氣體之下僅形成 —部分之層，而其他層則於原料氣體中不添加p〇(〇ch3)3 氣體之下所形成之金剛石膜者。 2 0. —種遮罩基板，其特徵係利用依申請專利範圍第 3項之方法所製造，於該基材上製造金剛石膜時’在對該 -5- 1257440 原料氣體中添加P〇 ( 〇CH3 ) 3氣體之下僅形成一部分之 - 層，而其他層則於原料氣體中不添加PO ( 〇ch3 ) 3氣體 之下形成之金剛石膜者。 21. —種遮罩基板，其特徵係利用依申請專利範圍第 1項或第2項之方法所製造，於該基材上製造金剛石膜時 ，在對該原料氣體中添加P( 〇CH3) 3氣體之下僅形成一 部分之層，而其他層則於原料氣體中不添加P( 〇CH3) 3 Φ 氣體之下形成之金剛石膜者。 2 2. —種遮罩基板，其特徵係利用依申請專利範圍第 5項之方法所製造，在添加P ( 〇CH3 ) 3氣體之下所形成 —部分之層，係形成於金剛石膜之全表面或一部分表面上 ，所形成之厚度爲20 μιη以下之範圍內之金剛石膜者。 2 3. —種遮罩基板，其特徵係利用依申請專利範圍第 1項或第2項之方法所製造，其中於該基材上製造金剛石 膜時，在對該原料氣體中添加B( OC2H5 ) 3氣體之下僅 φ 形成一部分之層，而其他層則於原料氣體中不添加 B ( OC2H5) 3氣體之下形成之金剛石膜者。 24. —種遮罩基板，其特徵係利用依申請專利範圍第 7項之方法所製造，在添加B( OC2H5 ) 3氣體之下所形成 的一部分之層，係形成於金剛石膜之全表面或一部分表面 上，所形成之厚度爲20μιη以下之範圍內之金剛石膜者。
TW093121951A 2003-07-24 2004-07-22 Method for producing diamond film TWI257440B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003201021A JP2005041719A (ja) 2003-07-24 2003-07-24 ダイヤモンド膜の製造方法
JP2003201019A JP4828089B2 (ja) 2003-07-24 2003-07-24 ダイヤモンド膜の製造方法
JP2003201018A JP4781617B2 (ja) 2003-07-24 2003-07-24 ダイヤモンド膜の製造方法

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Publication Number Publication Date
TW200506115A TW200506115A (en) 2005-02-16
TWI257440B true TWI257440B (en) 2006-07-01

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US (1) US20050016445A1 (zh)
EP (1) EP1500718A1 (zh)
KR (1) KR20050012149A (zh)
TW (1) TWI257440B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7534296B2 (en) * 2002-01-11 2009-05-19 Board Of Trustees Of Michigan State University Electrically conductive diamond electrodes
CN102157353B (zh) * 2010-12-03 2012-03-21 北京科技大学 一种高导热集成电路用金刚石基片的制备方法
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021870D0 (en) * 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
SG191220A1 (en) * 2010-12-23 2013-07-31 Element Six Ltd Controlling doping of synthetic diamond material
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
CN111945131B (zh) * 2020-09-18 2021-08-06 上海征世科技股份有限公司 一种通过微波等离子体采用碳化硼制备金刚石的方法

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Publication number Priority date Publication date Assignee Title
US5142390A (en) * 1989-02-23 1992-08-25 Ricoh Company, Ltd. MIM element with a doped hard carbon film
JPH03163820A (ja) * 1989-11-22 1991-07-15 Tokai Univ ダイヤモンドｎ型半導体およびダイヤモンドｐ―ｎ接合ダイオードの製造方法
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
JP4068817B2 (ja) * 2001-05-11 2008-03-26 信越化学工業株式会社 ダイヤモンド膜の製造方法及びダイヤモンド膜
JP2003321296A (ja) * 2002-04-25 2003-11-11 Shin Etsu Chem Co Ltd ダイヤモンド膜及びその製造方法

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KR20050012149A (ko) 2005-01-31

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