TWI256055B - Regulating a magnetic memory cell write current - Google Patents

Regulating a magnetic memory cell write current

Info

Publication number
TWI256055B
TWI256055B TW093117656A TW93117656A TWI256055B TW I256055 B TWI256055 B TW I256055B TW 093117656 A TW093117656 A TW 093117656A TW 93117656 A TW93117656 A TW 93117656A TW I256055 B TWI256055 B TW I256055B
Authority
TW
Taiwan
Prior art keywords
memory cell
magnetic memory
write current
cell write
regulating
Prior art date
Application number
TW093117656A
Other languages
English (en)
Other versions
TW200519960A (en
Inventor
Frederick A Perner
Original Assignee
Hewlett Packard Development Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co filed Critical Hewlett Packard Development Co
Publication of TW200519960A publication Critical patent/TW200519960A/zh
Application granted granted Critical
Publication of TWI256055B publication Critical patent/TWI256055B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Digital Magnetic Recording (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW093117656A 2003-12-02 2004-06-18 Regulating a magnetic memory cell write current TWI256055B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/725,746 US6850430B1 (en) 2003-12-02 2003-12-02 Regulating a magnetic memory cell write current

Publications (2)

Publication Number Publication Date
TW200519960A TW200519960A (en) 2005-06-16
TWI256055B true TWI256055B (en) 2006-06-01

Family

ID=34080857

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093117656A TWI256055B (en) 2003-12-02 2004-06-18 Regulating a magnetic memory cell write current

Country Status (5)

Country Link
US (1) US6850430B1 (zh)
EP (1) EP1538631A1 (zh)
JP (1) JP4235606B2 (zh)
CN (1) CN1627434B (zh)
TW (1) TWI256055B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412035B (zh) * 2008-04-17 2013-10-11 Sony Corp Recording method of magnetic memory element

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3866701B2 (ja) * 2003-08-25 2007-01-10 株式会社東芝 磁気ランダムアクセスメモリ及びそのテスト方法
JP2007157206A (ja) * 2005-12-01 2007-06-21 Renesas Technology Corp 半導体集積回路装置
US9019747B2 (en) 2011-12-01 2015-04-28 Panasonic Intellectual Property Management Co., Ltd. Nonvolatile semiconductor memory device and write method for the same
US8937841B2 (en) * 2012-05-16 2015-01-20 SK Hynix Inc. Driver for semiconductor memory and method thereof
US9583170B2 (en) * 2015-02-12 2017-02-28 Qualcomm Incorporated Adjusting resistive memory write driver strength based on a mimic resistive memory write operation
US10755779B2 (en) 2017-09-11 2020-08-25 Silicon Storage Technology, Inc. Architectures and layouts for an array of resistive random access memory cells and read and write methods thereof
US10761749B2 (en) 2018-10-31 2020-09-01 Micron Technology, Inc. Vectorized processing level calibration in a memory component
KR102661099B1 (ko) * 2018-11-08 2024-04-29 삼성전자주식회사 전송 소자를 포함하는 불휘발성 메모리 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6404671B1 (en) * 2001-08-21 2002-06-11 International Business Machines Corporation Data-dependent field compensation for writing magnetic random access memories
JP2003151260A (ja) * 2001-11-13 2003-05-23 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6608790B2 (en) * 2001-12-03 2003-08-19 Hewlett-Packard Development Company, L.P. Write current compensation for temperature variations in memory arrays
US6606262B2 (en) * 2002-01-10 2003-08-12 Hewlett-Packard Development Company, L.P. Magnetoresistive random access memory (MRAM) with on-chip automatic determination of optimized write current method and apparatus
US6791865B2 (en) * 2002-09-03 2004-09-14 Hewlett-Packard Development Company, L.P. Memory device capable of calibration and calibration methods therefor
JP3908685B2 (ja) * 2003-04-04 2007-04-25 株式会社東芝 磁気ランダムアクセスメモリおよびその書き込み方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412035B (zh) * 2008-04-17 2013-10-11 Sony Corp Recording method of magnetic memory element

Also Published As

Publication number Publication date
CN1627434B (zh) 2010-07-14
JP4235606B2 (ja) 2009-03-11
US6850430B1 (en) 2005-02-01
EP1538631A1 (en) 2005-06-08
CN1627434A (zh) 2005-06-15
JP2005166249A (ja) 2005-06-23
TW200519960A (en) 2005-06-16

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